US8072307B2 - Transformer - Google Patents
Transformer Download PDFInfo
- Publication number
- US8072307B2 US8072307B2 US12/938,016 US93801610A US8072307B2 US 8072307 B2 US8072307 B2 US 8072307B2 US 93801610 A US93801610 A US 93801610A US 8072307 B2 US8072307 B2 US 8072307B2
- Authority
- US
- United States
- Prior art keywords
- coil
- semiconductor layer
- trench
- layer
- wiring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F27/00—Details of transformers or inductances, in general
- H01F27/28—Coils; Windings; Conductive connections
- H01F27/2804—Printed windings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/645—Inductive arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Definitions
- FIG. 6 is a plan view of a first coil of a microtransformer according to a modification.
Abstract
Description
In the equations, k denotes a coupling coefficient (where 0<k<1), L1 denotes transmission coil self-inductance, L2 denotes reception coil self-inductance, R1 denotes transmission coil parasitic resistance, R2 denotes reception coil parasitic resistance, Rdriver denotes transmitting transistor output resistance, and CC denotes a capacitance between transmission and reception coils. In addition, mutual inductance M is expressed as M=k (L1−L2)1/2.
Claims (9)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009269875A JP5482152B2 (en) | 2009-11-27 | 2009-11-27 | Transformer element and manufacturing method thereof |
JP2009-269875 | 2009-11-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20110128108A1 US20110128108A1 (en) | 2011-06-02 |
US8072307B2 true US8072307B2 (en) | 2011-12-06 |
Family
ID=44068428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/938,016 Active US8072307B2 (en) | 2009-11-27 | 2010-11-02 | Transformer |
Country Status (2)
Country | Link |
---|---|
US (1) | US8072307B2 (en) |
JP (1) | JP5482152B2 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110073987A1 (en) * | 2009-09-25 | 2011-03-31 | Gunther Mackh | Through Substrate Features in Semiconductor Substrates |
US20130120095A1 (en) * | 2011-11-10 | 2013-05-16 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
US20150302975A1 (en) * | 2014-04-22 | 2015-10-22 | Semiconductor Manufacturing International (Shanghai) Corporation | Vertical Inductor and Method of Manufacturing the Same |
US20190355676A1 (en) * | 2018-05-17 | 2019-11-21 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2385534B1 (en) * | 2010-05-05 | 2017-10-18 | Nxp B.V. | Integrated transformer |
US9553485B2 (en) * | 2011-10-13 | 2017-01-24 | Integrated Device Technology, Inc. | Apparatus, system, and method for detecting a foreign object in an inductive wireless power transfer system based on input power |
US11049639B2 (en) | 2017-02-13 | 2021-06-29 | Analog Devices, Inc. | Coupled coils with lower far field radiation and higher noise immunity |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4416056A (en) * | 1977-12-13 | 1983-11-22 | Fujitsu Limited | Process for preparation of film coils |
JPH07183468A (en) | 1993-12-22 | 1995-07-21 | Tokin Corp | Insulating silicon substrate and inductor using the substrate, and distribution constant type filter |
US5572179A (en) * | 1992-05-27 | 1996-11-05 | Fuji Electric Co., Ltd. | Thin film transformer |
US20040056749A1 (en) * | 2002-07-18 | 2004-03-25 | Frank Kahlmann | Integrated transformer configuration |
US20060118905A1 (en) * | 2003-12-02 | 2006-06-08 | Tsuyoshi Himori | Electronic part and manufacturing method thereof |
US7091813B2 (en) * | 2002-06-13 | 2006-08-15 | International Business Machines Corporation | Integrated circuit transformer for radio frequency applications |
US20080179963A1 (en) * | 2006-08-28 | 2008-07-31 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Galvanic Isolators and Coil Transducers |
US20080266043A1 (en) * | 2002-05-31 | 2008-10-30 | International Rectifier Corporation | Planar transformer arrangement |
US20090046489A1 (en) * | 2007-04-19 | 2009-02-19 | Fuji Electric Device Technology Co., Ltd | Insulated transformers, and power converting device |
US20090283854A1 (en) * | 2008-05-19 | 2009-11-19 | Levy Max G | Design Structure and Method for Buried Inductors for Ultra-High Resistivity Wafers for SOI/RF SIGE Applications |
-
2009
- 2009-11-27 JP JP2009269875A patent/JP5482152B2/en active Active
-
2010
- 2010-11-02 US US12/938,016 patent/US8072307B2/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4416056A (en) * | 1977-12-13 | 1983-11-22 | Fujitsu Limited | Process for preparation of film coils |
US5572179A (en) * | 1992-05-27 | 1996-11-05 | Fuji Electric Co., Ltd. | Thin film transformer |
JPH07183468A (en) | 1993-12-22 | 1995-07-21 | Tokin Corp | Insulating silicon substrate and inductor using the substrate, and distribution constant type filter |
US20080266043A1 (en) * | 2002-05-31 | 2008-10-30 | International Rectifier Corporation | Planar transformer arrangement |
US7091813B2 (en) * | 2002-06-13 | 2006-08-15 | International Business Machines Corporation | Integrated circuit transformer for radio frequency applications |
US20040056749A1 (en) * | 2002-07-18 | 2004-03-25 | Frank Kahlmann | Integrated transformer configuration |
US20060118905A1 (en) * | 2003-12-02 | 2006-06-08 | Tsuyoshi Himori | Electronic part and manufacturing method thereof |
US20080179963A1 (en) * | 2006-08-28 | 2008-07-31 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Galvanic Isolators and Coil Transducers |
US20090046489A1 (en) * | 2007-04-19 | 2009-02-19 | Fuji Electric Device Technology Co., Ltd | Insulated transformers, and power converting device |
US20090283854A1 (en) * | 2008-05-19 | 2009-11-19 | Levy Max G | Design Structure and Method for Buried Inductors for Ultra-High Resistivity Wafers for SOI/RF SIGE Applications |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110073987A1 (en) * | 2009-09-25 | 2011-03-31 | Gunther Mackh | Through Substrate Features in Semiconductor Substrates |
US8697574B2 (en) * | 2009-09-25 | 2014-04-15 | Infineon Technologies Ag | Through substrate features in semiconductor substrates |
US9196670B2 (en) | 2009-09-25 | 2015-11-24 | Infineon Technologies Ag | Through substrate features in semiconductor substrates |
US20130120095A1 (en) * | 2011-11-10 | 2013-05-16 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
US8539666B2 (en) * | 2011-11-10 | 2013-09-24 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
US9159485B2 (en) | 2011-11-10 | 2015-10-13 | Harris Corporation | Method for making an electrical inductor and related inductor devices |
US20150302975A1 (en) * | 2014-04-22 | 2015-10-22 | Semiconductor Manufacturing International (Shanghai) Corporation | Vertical Inductor and Method of Manufacturing the Same |
US9984819B2 (en) * | 2014-04-22 | 2018-05-29 | Semiconductor Manufacturing International (Shanghai) Corporation | Vertical inductor and method of manufacturing the same |
US10319518B2 (en) | 2014-04-22 | 2019-06-11 | Semiconductor Manufacturing International (Shanghai) Corporation | Method of manufacturing a vertical inductor |
US20190355676A1 (en) * | 2018-05-17 | 2019-11-21 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
US11393776B2 (en) * | 2018-05-17 | 2022-07-19 | Advanced Semiconductor Engineering, Inc. | Semiconductor device package and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP5482152B2 (en) | 2014-04-23 |
JP2011114203A (en) | 2011-06-09 |
US20110128108A1 (en) | 2011-06-02 |
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