Brevet US8080405 - Semiconductor nanocrystal probes for biological applications and process for ...

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Revendications

1. A semiconductor nanocrystal composition, comprising:

a) a core comprising a first semiconductor material;

b) a core-overcoating shell comprising a second semiconductor material, wherein the core and the core-overcoating shell form a core/shell nanocrystal; and

c) an encapsulating net surrounding the core/shell nanocrystal.

2. The semiconductor nanocrystal composition of claim 1, wherein said semiconductor nanocrystal composition is water-soluble.

3. The semiconductor nanocrystal composition of claim 1, wherein said semiconductor nanocrystal composition has a narrow emission wavelength band.

4. The semiconductor nanocrystal composition of claim 3, wherein said narrow emission wavelength band does not exceed 40 nm in width when measured at full width half maximum.

5. The semiconductor nanocrystal composition of claim 3, wherein said narrow emission wavelength band does not exceed about 20 nm in width when measured at full width half maximum.

6. The semiconductor nanocrystal composition of claim 1, wherein said encapsulating net comprises one or more linking agents capable of linking said core/shell nanocrystal to one or more affinity molecules.

7. The semiconductor nanocrystal composition of claim 6, wherein said one or more linking agents are polymerizable.

8. The semiconductor nanocrystal composition of claim 6, wherein said one or more linking agents comprise a thiol moiety.

9. The semiconductor nanocrystal composition of claim 6, wherein said one or more linking agents comprise an alkyl group.

10. The semiconductor nanocrystal composition of claim 1, wherein said core has a diameter from about 20 Å to about 100 Å.

11. The semiconductor nanocrystal composition of claim 1, wherein said core-overcoating shell is 1-10 monolayers thick.

12. The semiconductor nanocrystal composition of claim 1, wherein said core-overcoating shell epitaxially surrounds said core.

13. The semiconductor nanocrystal composition of claim 1, wherein said core/shell nanocrystal has an average cross-section that is no larger than about 20 nm.

14. The semiconductor nanocrystal composition of claim 1, wherein said core/shell nanocrystal has an average cross-section of about 1 nm to about 10 nm.

15. The semiconductor nanocrystal composition of claim 1, wherein said first semiconductor material comprises a Group II-VI semiconductor.

16. The semiconductor nanocrystal composition of claim 1, wherein said first semiconductor material comprises a Group III-V semiconductor.

17. The semiconductor nanocrystal composition of claim 1, wherein said first semiconductor material comprises MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, or HgTe.

18. The semiconductor nanocrystal composition of claim 1, wherein said first semiconductor material comprises GaAs, InGaAs, InP, or InAs.

19. The semiconductor nanocrystal composition of claim 1, wherein said second semiconductor material comprises a Group II-VI semiconductor.

20. The semiconductor nanocrystal composition of claim 1, wherein said second semiconductor material comprises a Group III-V semiconductor.

21. The semiconductor nanocrystal composition of claim 1, wherein said second semiconductor material comprises MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, or HgTe.

22. The semiconductor nanocrystal composition of claim 1, wherein said second semiconductor material comprises GaAs, InGaAs, InP, or InAs.

23. The semiconductor nanocrystal composition of claim 1, wherein said first semiconductor material comprises CdSe and the second semiconductor material comprises ZnS.

24. A semiconductor nanocrystals composition, comprising:

a) a core comprising a first semiconductor material;

b) a core-overcoating shell comprising a second semiconductor material, wherein the core and the core-overcoating shell form a core/shell nanocrystal; and,

c) an encapsulating net surrounding the core/shell nanocrystal;

wherein the core has an average cross-section no larger than 20 nanometers.

25. The semiconductor nanocrystal composition of claim 24, wherein said core has an average cross-section no larger than 10 nanometers.

26. The semiconductor nanocrystal composition of claim 24, wherein said nanocrystal core has an average cross-section in a range of from 1 nanometer to 10 nanometers.

27. The semiconductor nanocrystal composition of claim 24, wherein said encapsulating net comprises one or more linking agents capable of linking said core/shell nanocrystal to one or more affinity molecules.

28. The semiconductor nanocrystal composition of claim 27, wherein said one or more linking agents are polymerizable.

29. The semiconductor nanocrystal composition of claim 27, wherein said one or more linking agents comprise a thiol moiety.

30. The semiconductor nanocrystal composition of claim 27, wherein said one or more linking agents comprise an alkyl group.

31. The semiconductor nanocrystal composition of claim 24, wherein said first semiconductor material comprises a Group II-VI semiconductor.

32. The semiconductor nanocrystal composition of claim 24, wherein said first semiconductor material comprises a Group III-V semiconductor.

33. The semiconductor nanocrystal composition of claim 24, wherein said first semiconductor material comprises MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, or HgTe.

34. The semiconductor nanocrystal composition of claim 24, wherein said first semiconductor material comprises GaAs, InGaAs, InP, or InAs.

35. The semiconductor nanocrystal composition of claim 24, wherein said second semiconductor material comprises a Group II-VI semiconductor.

36. The semiconductor nanocrystal composition of claim 24, wherein said second semiconductor material comprises a Group III-V semiconductor.

37. The semiconductor nanocrystal composition of claim 24, wherein said second semiconductor material comprises MgS, MgSe, MgTe, CaS, CaSe, CaTe, SrS, SrSe, SrTe, BaS, BaSe, BaTe, ZnS, ZnSe, ZnTe, CdS, CdSe, CdTe, HgS, HgSe, or HgTe.

38. The semiconductor nanocrystal composition of claim 24, wherein said second semiconductor material comprises GaAs, InGaAs, InP, or InAs.

39. The semiconductor nanocrystal composition of claim 24, wherein said first semiconductor material comprises CdSe and the second semiconductor material comprises ZnS.

Brevets

Semiconductor nanocrystal probes for biological applications and process for ...

Citations

Revendications

Dessins