US8274210B2 - Halosilicate phosphor and white light emitting device including the same - Google Patents
Halosilicate phosphor and white light emitting device including the same Download PDFInfo
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Definitions
- the following disclosure relates to a halosilicate phosphor and a white light emitting device including the halosilicate phosphor. More particularly, one or more exemplary embodiments relate to a halosilicate phosphor having a large full width at half maximum (“FWHM”) and a white light emitting device including the halosilicate phosphor.
- FWHM full width at half maximum
- a conventional optical system may include fluorescent lamps or incandescent lamps. Fluorescent lamps, however, cause environmental problems due to high levels of mercury (Hg) included therein. Also, conventional optical systems have very short lifetimes and/or low efficiencies and thus are unsuitable for use energy saving applications. Therefore, research is being performed to develop white light emitting devices having high efficiencies and extended lifetimes.
- Hg mercury
- White light emitting devices are able to produce white light using three methods as follows.
- red, green and blue phosphors may be excited by an ultraviolet light emitting diode (“UV LED”) acting as a light source to produce the white light.
- red and green phosphors may be excited by a blue light emitting diode (“LED”) acting as a light source to produce the white light.
- LED blue light emitting diode
- a yellow phosphor may be excited by a blue LED acting as a light source to produce the white light.
- the white light is generally produced by combining the blue LED with Y 3 Al 5 O 12 :Ce 3+ , Tb 3 Al 5 O 12 :Ce 3+ , (Sr,Ba) 2 SiO 4 :Eu 2+ , or the like as the yellow phosphor.
- Y 3 Al 5 O 12 :Ce 3+ is known as a phosphor suitable for use in a white light emitting device due to its excellent efficiency and wide emitting bands.
- the color rendering properties of the Y 3 Al 5 O 12 :Ce 3+ phosphor are generally insufficient, and thus only cold white light may be generated using this method due to an insufficient red light emission.
- a silicate-based phosphor has been developed to be used as an orange-yellow phosphor.
- a white light emitting device generating white light by exciting the silicate-based phosphor using a blue LED light source is known.
- One or more exemplary embodiments include a halosilicate phosphor having a large full width at half maximum (“FWHM”).
- One or more exemplary embodiments include a method of preparing the halosilicate phosphor.
- One or more exemplary embodiments include a white light emitting device that includes the halosilicate phosphor and thus has excellent color rendering properties.
- one or more embodiments may include a halosilicate phosphor represented by Formula 1.
- p(Ca 1-x M 1 x )O.qM 2 O 2 .rM 3 A 2 :sM 4 wherein M 1 comprises at least one selected from a group consisting of Sr 2+ and Ba 2+ , M 2 comprises at least one selected from a group consisting of Si 4+ and Ge 4+ , M 3 comprises at least one selected from a group consisting of Ca 2+ , Sr 2+ and Ba 2+ , M 4 comprises at least one selected from a group consisting of Eu 2+ , Mn 2+ , Sb 2+ , Ce 3+ , Pr 3+ , Nd 3+ , Sm 3+ , Tb 3+ , Dy 3+ , Ho 3+ , Er 3+ , Yb 3+ and Bi 3+ , A comprises at least one selected from a group consisting of F ⁇ , Cl ⁇ , Br ⁇ and I ⁇
- the halosilicate phosphor may have a FWHM of about 125 nm to about 220 nm in emission spectra.
- one or more exemplary embodiments include a white light emitting device including a light emitting diode (“LED”) and the halosilicate phosphor.
- LED light emitting diode
- the LED may be either a blue LED or an ultraviolet light emitting diode (“UV LED”).
- UV LED ultraviolet light emitting diode
- the white light emitting device may further include at least one selected from a group consisting of a blue phosphor, a green phosphor and a red phosphor.
- the blue phosphor may include at least one selected from a group consisting of (Sr,Ba,Ca) 5 (PO 4 ) 3 Cl:Eu 2+ ; BaMg 2 Al 16 O 27 :Eu 2+ ; Sr 4 Al 14 O 25 :Eu 2+ ; BaAl 8 O 13 :Eu 2+ ; BaMgAl 10 O 17 :Eu 2+ and Sr 2 Si 3 O 8 .2SrCl 2 :Eu 2+ ; and Ba 3 MgSi 2 O 8 :Eu 2+ and (Sr,Ca) 10 (PO 4 ) 6 .nB 2 O 3 :Eu 2+ .
- the green phosphor may include at least one selected from a group consisting of (Ba,Sr,Ca) 2 SiO 4 :Eu 2+ ; Ba 2 MgSi 2 O 7 :Eu 2+ ; Ba 2 ZnSi 2 O 7 :Eu 2+ ; BaAl 2 O 4 :Eu 2+ ; SrAl 2 O 4 :Eu 2+ ; BaMgAl 10 O 17 :Eu 2+ , Mn 2+ ; and BaMg 2 Al 16 O 27 :Eu 2+ , Mn 2+ .
- the red phosphor may include at least one selected from a group consisting of (Ba,Sr,Ca) 2 Si 5 N 8 :Eu 2+ ; (Sr,Ca)AlSiN 3 :Eu 2+ ; Y 2 O 3 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Sr,Ca,Ba) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Ca,Sr) 10 (PO 4 ) 6 (F,Cl):E 2+ ,Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 O 2 S:Eu 3+ ,Bi 3+ ; (G
- the halosilicate phosphor may have a peak wavelength of about 520 nm to about 670 nm in emission spectra.
- the white light emitting device may be used in a traffic light, a light source of communication devices, a backlight of a display device, or illumination applications.
- FIG. 1 is a schematic view illustrating an exemplary embodiment of the structure of a white light emitting device
- FIG. 2 is a graph showing intensity (arbitrary units, a.u.) versus wavelength (nanometers, nm) for an emission spectra of a halosilicate phosphor prepared according to Example 1 and resulting from exciting the halosilicate phosphor with a light having a wavelength of 400 nm;
- FIG. 3 is a graph showing intensity (a.u.) versus wavelength (nm) for an emission spectra of a halosilicate phosphor prepared according to Example 2 and resulting from exciting the halosilicate phosphor with a light having a wavelength of 400 nm;
- FIG. 4 is a graph showing intensity (a.u.) versus wavelength (nm) for an emission spectra of a halosilicate phosphor prepared according to Example 3 and resulting from exciting the halosilicate phosphor with a light having a wavelength of 400 nm;
- FIG. 5 is a graph showing the normalized intensity (a.u.) versus wavelength (nm) for an emission spectra of the halosilicate phosphors prepared according to Example 1, Comparative Example 1 and Comparative Example 3;
- FIG. 6 is a graph showing the chromaticity coordinates (x, y) of the halosilicate phosphors prepared according to Example 1, Comparative Example 1, Comparative Example 3, and a blue light emitting diode (“LED”); and
- FIG. 7 is a graph showing intensity (a.u.) versus scattering angle 2 ⁇ (degree) for the X-ray diffraction (“XRD”) of the halosilicate phosphors prepared according to Example 1, Example 2, Example 3 and Comparative Example 1.
- XRD X-ray diffraction
- first, second, third etc. may be used herein to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings herein.
- relative terms such as “lower” or “bottom” and “upper” or “top,” may be used herein to describe one element's relationship to another elements as illustrated in the Figures. It will be understood that relative terms are intended to encompass different orientations of the device in addition to the orientation depicted in the Figures. For example, if the device in one of the figures is turned over, elements described as being on the “lower” side of other elements would then be oriented on “upper” sides of the other elements. The exemplary term “lower”, can therefore, encompasses both an orientation of “lower” and “upper,” depending on the particular orientation of the figure.
- Exemplary embodiments are described herein with reference to cross section illustrations that are schematic illustrations of idealized embodiments of the present disclosure. As such, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments of the present disclosure should not be construed as limited to the particular shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, a region illustrated or described as flat may, typically, have rough and/or nonlinear features. Moreover, sharp angles that are illustrated may be rounded. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the precise shape of a region and are not intended to limit the scope of this disclosure.
- One or more exemplary embodiments include a halosilicate phosphor represented by Formula 1.
- the halosilicate phosphor may absorb light in the wavelength range of about 360 nanometers (nm) to about 470 nm. In other exemplary embodiments the halosilicate phosphor may emit visible light having a peak wavelength of from about 520 nm to about 670 nm according to the compositions of the metal ions. Thus, the halosilicate phosphor is a material having excellent emission properties over a wide range of wavelengths from green to orange.
- the halosilicate phosphor has a far wider full width at half maximum (“FWHM”) in a wavelength range of about 125 to about 220 nm as compared to a conventional Y 3 Al 5 O 12 :Ce 3+ phosphor or Sr 2 SiO 4 :Eu 2+ phosphor.
- the halosilicate phosphor may be applied to a blue light emitting diode (“LED”) either alone or with a small amount of an additional phosphor.
- the halosilicate phosphor may be applied to an ultraviolet light emitting diode (“UV LED”) with the addition of blue, green and/or red phosphors in order to fabricate a white light emitting device having excellent color rendering properties and excellent color reproduction properties.
- UV LED ultraviolet light emitting diode
- the wide band emission may occur since at least two phases of the halosilicate are mixed. That is, a relative intensity of light emitted from each of the phases of the halosilicate phosphor may vary according to the r/q ratio, which is defined as the mixing ratio where r is a halide and q is an oxide.
- r is selected from at least one of a group consisting of Ca, Sr and Ba halides and q is selected from at least one of a group consisting of Si and Ge oxides.
- the halide and oxide are selected in order to change the overall tones of the emission.
- the contribution of the green light emission increases as the r/q ratio increases, and the contribution of the orange light emission increases as the r/q ratio decreases.
- a high quality yellow phosphor may be combined with a blue LED to generate a white light in a range of from about 1 ⁇ r/q ⁇ about 3 may be prepared.
- the halosilicate phosphor may be prepared from a) a Ca oxide alone or from a mixture of a Ca oxide mixed with at least one of a Sr oxide and a Ba oxide; b) a Si oxide alone or from a mixture of a Si oxide and a Ge oxide; c) from an Eu oxide alone or from a mixture of an Eu oxide and an oxide of at least one metal selected from a group consisting of Mn, Sb, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb and Bi and d) from a halide of Ca, Sr, Ba or any mixture thereof.
- the amount of the a), b), c) and d) components may be selected such that p, q, r and s are within the ranges described in Formula 1.
- the molar ratio of (Sr+Ba):Ca may be in a range of about 0.0001:1 to about 2:3.
- the molar ratio of Ge:Si may be in a range of about 0.0001:1 to about 1:3.
- the molar ratio of A:Eu may be in a range of about 0.0001:1 to about 9:1, wherein A includes at least one metal selected from the group consisting of Mn, Sb, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb and Bi.
- the reactant is shown as an oxide since the reactant turns to the oxide form at a high temperature synthesis even if the reactant is a precursor of any other form such as a carbonate, a nitrate, a hydroxide, or an acetate. Therefore, if a molar ratio of an oxide of the starting material is within the above-described range, the reaction precursor may be present in various other forms such as a carbonate, a nitrate, a hydroxide, an acetate, etc. in addition to the metal oxide.
- a halide of Ca, Sr, Ba or mixtures thereof may function as a constituent element of a phosphor having at least two phases.
- the melting point of the Ca, Sr or Ba halide is equal to or less than a temperature of about 800 degrees Celsius (° C.)
- the Ca, Sr or Ba halide functions as a flux to increase the crystallinity of the halosilicate at a temperature close to about 1000° C.
- a material used as a flux in order to produce high-quality crystals.
- the white light emitting device may produce a white light having a high color rendering index, and thus may be applied as a high-quality illuminating application which is required in, for example, medical applications, food exhibitions, museums, and art galleries.
- the halosilicate phosphor may be prepared using any various known methods, such as a solid phase method, a liquid phase method, or a vaporous phase method, without limitation.
- a mixture of powder of a Ca oxide (alone or in a mixture of a Ca oxide with at least one of a Sr oxide or a Ba oxide); a Si oxide (alone or in a mixture of a Si oxide with a Ge oxide); an Eu oxide (alone or in a mixture of an Eu oxide with an oxide of at least one metal selected from a group consisting of Mn, Sb, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb and Bi); and a halide of Ca, Sr, Ba or mixtures thereof may be prepared.
- the obtained powder mixture is sintered at a temperature of about 700° C. to about 1200° C. in a reducing atmosphere of a gaseous mixture of hydrogen and nitrogen.
- the amount of hydrogen in the gaseous mixture is controlled to be at least 5 volume percent (vol. %).
- the Eu oxide is used either alone or in a mixture of an Eu oxide with an oxide of at least one metal selected from a group consisting of Mn, Sb, Ce, Pr, Nd, Sm, Tb, Dy, Ho, Er, Yb and Bi.
- the Eu oxide or Eu oxide mixture is then doped into the inner surface of the phosphor crystals where it functions as an activator when the halosilicate phosphor emits light.
- the synthetic temperature is lower than 700° C., the synthesis reaction may not be thoroughly performed and the intensity of emission is lower than at a desired level. On the other hand, if the synthetic temperature is higher than 1200° C., the target product is melted and a glass phase is formed. Thus, the intensity of emission is reduced and desired physical properties may not be obtained.
- the obtained sintered product may be pulverized into a powder and washed with distilled water to obtain the desired phosphor.
- One or more exemplary embodiments include a white light emitting device including the halosilicate phosphor described above.
- a LED may be either a blue LED or an UV LED.
- An excitation light source of the LED may have a peak wavelength of about 360 to about 470 nm.
- the halosilicate phosphor may have a peak wavelength of about 520 to about 670 nm in the emission spectra.
- Exemplary embodiments of the white light emitting device may further include at least one selected from a group consisting of a blue phosphor, a green phosphor and a red phosphor.
- the blue phosphor may include at least one selected from a group consisting of (Sr,Ba,Ca) 5 (PO 4 ) 3 Cl:Eu 2+ ; BaMg 2 Al 16 O 27 :Eu 2+ ; Sr 4 Al 14 O 25 :Eu 2+ ; BaAl 8 O 13 :Eu 2+ ; BaMgAl 10 O 17 :Eu 2+ , Sr 2 Si 3 O 8 .2SrCl 2 :Eu 2+ ; Ba 3 MgSi 2 O 8 :Eu 2+ ; and (Sr,Ca) 10 (PO 4 ) 6 .nB 2 O 3 :Eu 2+ .
- the green phosphor may include at least one selected from a group consisting of (Ba,Sr,Ca) 2 SiO 4 :Eu 2+ ; Ba 2 MgSi 2 O 7 :Eu 2+ ; Ba 2 ZnSi 2 O 7 :Eu 2+ ; BaAl 2 O 4 :Eu 2+ ; SrAl 2 O 4 :Eu 2+ ; BaMgAl 10 O 17 :Eu 2+ , Mn 2+ and BaMg 2 Al 16 O 27 :Eu 2+ ,Mn 2+ .
- the red phosphor may include at least one selected from a group consisting of (Ba,Sr,Ca) 2 Si 5 N 8 :Eu 2+ ; (Sr,Ca)AlSiN 3 :Eu 2+ ; Y 2 O 3 :Eu 3+ ,Bi 3+ ; (Ca,Sr)S:Eu 2+ ; CaLa 2 S 4 :Ce 3+ ; (Sr,Ca,Ba) 2 P 2 O 7 :Eu 2+ ,Mn 2+ ; (Ca,Sr) 10 (PO 4 ) 6 (F,Cl):Eu 2+ , Mn 2+ ; (Y,Lu) 2 WO 6 :Eu 3+ ,Mo 6+ ; (Gd,Y,Lu,La) 2 O 3 :Eu 3+ ,Bi 3+ ; (Gd,Y,Lu,La) 2 O 2 S:Eu 3+ ,Bi 3+ ;
- FIG. 1 is a schematic view illustrating an exemplary embodiment of the structure of a white light emitting device.
- the white light emitting device illustrated in FIG. 1 is a polymer lens type surface-mounted white light emitting device.
- an epoxy lens is used as the polymer lens.
- the UV LED chips 10 are die-bonded to the electric lead wires 30 through the gold wires 20 .
- the epoxy mold layers 50 are formed so as to include the phosphor compositions containing a halosilicate phosphor 40 according to an exemplary embodiment.
- a reflective film coated with aluminum or silver is formed on an inner surface of the mold 60 to reflect light upward from the UV LED chips 10 and to limit the epoxy of the epoxy mold layers 50 to an appropriate amount.
- An epoxy dome lens 70 is disposed above the epoxy mold layer 50 .
- the shape of the epoxy dome lens 70 may be varied according to a desired orientation angle.
- the white light emitting device is not limited to the structure illustrated in FIG. 1 .
- the white light emitting device may be a phosphor-mounted light emitting device, a lamp-type light emitting device, a PCB-type surface-mounted light emitting device or the like.
- the halosilicate phosphor according to an exemplary embodiment may be applied to a lamp such as a mercury lamp or a xenon lamp, or to a photoluminescent liquid crystal display (“PLLCD”), in addition to a white light emitting device as described above.
- a lamp such as a mercury lamp or a xenon lamp
- PLCD photoluminescent liquid crystal display
- a phosphor was prepared using a solid phase reaction method.
- the resultant phosphor has a FWHM of 200 nm in an emission spectrum.
- a phosphor in powder form was manufactured in the same manner as in Example 1, except that 8.7 g of CaCl 2 .2H 2 O was used instead of 5.87 g of CaCl 2 .2H 2 O.
- the resultant phosphor has a FWHM of 165 nm in an emission spectrum.
- a phosphor in powder form was manufactured in the same manner as in Example 1, except that 10.7 g of CaCl 2 .2H 2 O was used instead of 5.87 g of CaCl 2 .2H 2 O.
- the resultant phosphor has a FWHM of 130 nm in an emission spectrum.
- a phosphor was prepared using a solid phase reaction method.
- a source powder including 6.66 g of CaCO 3 , 2 g of SiO 2 , 5.00 g of CaCl 2 .2H 2 O and 0.30 g of Eu 2 O 3 was mixed using a mortar for 30 minutes.
- the resultant sintered sample was then pulverized using the mortar and washed with distilled water at room temperature to obtain a phosphor in powder form.
- the resultant phosphor has a FWHM of 100 nm in an emission spectrum.
- a phosphor was prepared using a solid phase reaction method.
- a source powder including 4.00 g of Y 2 O 3 , 3.20 g of Al 2 O 3 and 0.34 g of CeO 2 was mixed using a mortar for 30 minutes.
- the resultant sintered sample was then pulverized using the mortar and washed with distilled water at room temperature to obtain a phosphor in powder form.
- the resultant phosphor has a FWHM of 120 nm in an emission spectrum.
- a phosphor was prepared using a solid phase reaction method.
- a source powder including 8.00 g of SrCO 3 , 1.65 g of SiO 2 and 0.12 g of Eu 2 O 3 was mixed using a mortar for 30 minutes.
- the resultant sintered sample was then pulverized using the mortar and washed with distilled water at room temperature to obtain a phosphor in powder form.
- the resultant phosphor has a FWHM of 100 nm in an emission spectrum.
- FIGS. 2 through 4 are graphs of intensity (a.u.) versus wavelength (nm) for the emission spectra of the phosphors prepared in Examples 1 through 3, and resulting from the phosphors being excited with a light having a wavelength of 400 nm.
- FIG. 5 is a graph showing the normalized intensity (a.u.) versus wavelength (nm) for the emission spectra of the phosphors prepared in Example 1 and Comparative Examples 2 and 3. Referring to FIG. 5 , it can be seen that the FWHM of a phosphor according to an exemplary embodiment is relatively wide.
- FIG. 6 is a graph showing the chromaticity coordinates (x, y) of the phosphors prepared in Example 1 and Comparative Examples 2 and 3. Referring to FIG. 6 , it can be seen that white light may be emitted by applying the phosphor to a blue LED in combination with Y 3 Al 5 O 12 :Ce 3+ or Sr 2 SiO 4 :Eu 2+ .
- FIG. 7 is a graph showing intensity (a.u.) versus scattering angle 2 ⁇ (degree) for the X-ray diffraction (“XRD”) of the phosphors prepared in Examples 1 through 3 according to exemplary embodiments and Comparative Example 1.
- XRD X-ray diffraction
- the halosilicate phosphor has a large FWHM, and the white light emitting device including the halosilicate phosphor has excellent color rendering properties.
Abstract
p(Ca1-xM1 x)O.qM2O2.rM3A2:sM4
-
- wherein M1 includes at least one selected from a group consisting of Sr2+ and Ba2+; M2 includes at least one selected from a group consisting of Si4+ and Ge4+; M3 includes at least one selected from a group consisting of Ca2+, Sr2+ and Ba2+; M4 includes at least one selected from a group consisting of Eu2+, Mn2+, Sb2+, Ce3+, Pr3+, Nd3+, Sm3+, Tb3+, Dy3+, Ho3+, Er3+, Yb3+ and Bi3+; A includes at least one selected from a group consisting of F−, Cl−, Br− and I−; and wherein 0≦x<1, 1.8≦p≦2.2, 0.8≦q≦1.2, 1<r/q<3 and 0<s<0.5.
Description
p(Ca1-xM1 x)O.qM2O2.rM3A2:sM4
wherein M1 comprises at least one selected from a group consisting of Sr2+ and Ba2+, M2 comprises at least one selected from a group consisting of Si4+ and Ge4+, M3 comprises at least one selected from a group consisting of Ca2+, Sr2+ and Ba2+, M4 comprises at least one selected from a group consisting of Eu2+, Mn2+, Sb2+, Ce3+, Pr3+, Nd3+, Sm3+, Tb3+, Dy3+, Ho3+, Er3+, Yb3+ and Bi3+, A comprises at least one selected from a group consisting of F−, Cl−, Br− and I−, 0≦x<1, 1.8≦p≦2.2, 0.8≦q≦1.2, 1<r/q<3 and 0<s<0.5.
p(Ca1-xM1 x)O.qM2O2.rM3A2:sM4 Formula 1
-
- wherein M1 comprises at least one selected from a group consisting of Sr2+ and Ba2+;
- M2 comprises at least one selected from a group consisting of Si4+ and Ge4+;
- M3 comprises at least one selected from a group consisting of Ca2+, Sr2+ and Ba2+;
- M4 comprises at least one selected from a group consisting of Eu2+, Mn2+, Sb2+, Ce3+, Pr3+, Nd3+, Sm3+, Tb3+, Dy3+, Ho3+, Er3+, Yb3+ an Bi3+;
- A comprises at least one selected from a group consisting of F−, Cl−, Br− and I−; and
Claims (9)
p(Ca1-xM1 x)O.qM2O2.rM3A2:sM4 Formula 1
p(Ca1-xM1 x)O.qM2O2.rM3A2:sM4 Formula 1
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KR1020080129410A KR20100070731A (en) | 2008-12-18 | 2008-12-18 | Halosilicate phosphors and white light emitting devices including same |
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JP2013225373A (en) * | 2010-08-18 | 2013-10-31 | Sharp Corp | Lighting device, display device, and television receiving apparatus |
CN107068838B (en) * | 2011-06-03 | 2021-11-30 | 西铁城电子株式会社 | Device for displaying a display and system for displaying a display |
TWI432555B (en) | 2011-08-12 | 2014-04-01 | Unity Opto Technology Co Ltd | Aluminate phosphor |
KR101356962B1 (en) * | 2011-10-17 | 2014-02-04 | 한국과학기술원 | Oxide Green Phosphor and the Method for Preparing the Same and White LED using the same |
CN103343004A (en) * | 2013-07-01 | 2013-10-09 | 彩虹集团公司 | CaxSiO4Cly:Eu<2+> fluorescent powder and preparation method thereof |
CN104130774B (en) * | 2014-08-15 | 2016-05-11 | 昆明学院 | A kind of Chlorosilicate phosphor powder and preparation method thereof |
CN106497565B (en) * | 2016-10-21 | 2019-03-12 | 中国科学院长春应用化学研究所 | A kind of near-infrared long after glow luminous material and preparation method thereof that Yb is ion-activated |
Citations (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034607A (en) | 1989-02-07 | 1991-07-23 | Agfa-Gevaert, N.V. | Reproduction of X-ray images with photostimulable phosphor |
US20030006469A1 (en) | 2000-05-29 | 2003-01-09 | Andries Ellens | Led-based white-emitting illumination unit |
US20050104503A1 (en) | 2000-05-29 | 2005-05-19 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh, | LED-based white-emitting illumination unit |
US20060028122A1 (en) * | 2004-08-04 | 2006-02-09 | Intematix Corporation | Novel silicate-based yellow-green phosphors |
US20060081814A1 (en) * | 2004-10-18 | 2006-04-20 | Kabushiki Kaisha Toshiba | Fluorescent substance and light-emitting device using the same |
JP2006219636A (en) | 2005-02-14 | 2006-08-24 | Matsushita Electric Works Ltd | Phosphor, method for producing the same and light-emitting device |
KR20070003377A (en) | 2005-07-01 | 2007-01-05 | 웨이 젠 슈 | White diode |
KR20070042924A (en) | 2004-08-05 | 2007-04-24 | 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 | Light source with a low colour temperature |
US20070125982A1 (en) | 2005-12-02 | 2007-06-07 | Sarnoff Corporation | Metal silicate halide phosphors and LED lighting devices using the same |
US20070145879A1 (en) | 2005-12-22 | 2007-06-28 | Abramov Vladimir S | Light emitting halogen-silicate photophosphor compositions and systems |
JP2007217605A (en) | 2006-02-17 | 2007-08-30 | Matsushita Electric Works Ltd | Phosphor and process for producing the same, and light emitting device |
JP2007231250A (en) | 2006-02-02 | 2007-09-13 | Nichia Chem Ind Ltd | Phosphor and light-emitting device using the same |
WO2007109978A1 (en) | 2006-03-24 | 2007-10-04 | General Research Institute For Nonferrous Metals, Beijing | A phosphor, its making method and the photo-luminescent device using the same |
KR20070106570A (en) | 2005-02-23 | 2007-11-01 | 스미또모 가가꾸 가부시끼가이샤 | Phosphor, light emitting device and white light emitting diode |
KR20080009212A (en) | 2005-05-30 | 2008-01-25 | 네모또 도꾸슈 가가꾸 가부시키가이샤 | Green light emitting phosphor |
US20080036364A1 (en) | 2006-08-10 | 2008-02-14 | Intematix Corporation | Two-phase yellow phosphor with self-adjusting emission wavelength |
US20080116786A1 (en) * | 2004-08-04 | 2008-05-22 | Intematix Corporation | Novel silicate-based yellow-green phosphors |
US20080128679A1 (en) | 2006-10-03 | 2008-06-05 | Yongchi Tian | Metal silicate halide phosphors and led lighting devices using the same |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2432039B1 (en) * | 1978-07-28 | 1981-08-14 | Rhone Poulenc Ind | |
DE3863870D1 (en) * | 1987-08-17 | 1991-08-29 | Agfa Gevaert Nv | REPRODUCTION OF X-RAY IMAGES BY PHOTO-READABLE PHOSPHORUS. |
-
2008
- 2008-12-18 KR KR1020080129410A patent/KR20100070731A/en not_active Application Discontinuation
-
2009
- 2009-09-09 US US12/556,369 patent/US8274210B2/en not_active Expired - Fee Related
- 2009-12-16 JP JP2009285376A patent/JP2010144170A/en not_active Ceased
Patent Citations (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034607A (en) | 1989-02-07 | 1991-07-23 | Agfa-Gevaert, N.V. | Reproduction of X-ray images with photostimulable phosphor |
US20030006469A1 (en) | 2000-05-29 | 2003-01-09 | Andries Ellens | Led-based white-emitting illumination unit |
JP2003535478A (en) | 2000-05-29 | 2003-11-25 | パテント−トロイハント−ゲゼルシヤフト フユール エレクトリツシエ グリユーラムペン ミツト ベシユレンクテル ハフツング | LED based white light emitting lighting unit |
US20050104503A1 (en) | 2000-05-29 | 2005-05-19 | Patent-Treuhand-Gesellschaft Fur Elektrische Gluhlampen Mbh, | LED-based white-emitting illumination unit |
US20060028122A1 (en) * | 2004-08-04 | 2006-02-09 | Intematix Corporation | Novel silicate-based yellow-green phosphors |
KR20060093259A (en) | 2004-08-04 | 2006-08-24 | 인터매틱스 코포레이션 | White led and composition comprising new silicate-based yellow-green phosphors |
US20080116786A1 (en) * | 2004-08-04 | 2008-05-22 | Intematix Corporation | Novel silicate-based yellow-green phosphors |
KR20070042924A (en) | 2004-08-05 | 2007-04-24 | 파텐트-트로이한트-게젤샤프트 퓌어 엘렉트리쉐 글뤼람펜 엠베하 | Light source with a low colour temperature |
US20060081814A1 (en) * | 2004-10-18 | 2006-04-20 | Kabushiki Kaisha Toshiba | Fluorescent substance and light-emitting device using the same |
JP2006219636A (en) | 2005-02-14 | 2006-08-24 | Matsushita Electric Works Ltd | Phosphor, method for producing the same and light-emitting device |
KR20070106570A (en) | 2005-02-23 | 2007-11-01 | 스미또모 가가꾸 가부시끼가이샤 | Phosphor, light emitting device and white light emitting diode |
KR20080009212A (en) | 2005-05-30 | 2008-01-25 | 네모또 도꾸슈 가가꾸 가부시키가이샤 | Green light emitting phosphor |
KR20070003377A (en) | 2005-07-01 | 2007-01-05 | 웨이 젠 슈 | White diode |
US20070125982A1 (en) | 2005-12-02 | 2007-06-07 | Sarnoff Corporation | Metal silicate halide phosphors and LED lighting devices using the same |
US20070145879A1 (en) | 2005-12-22 | 2007-06-28 | Abramov Vladimir S | Light emitting halogen-silicate photophosphor compositions and systems |
JP2007231250A (en) | 2006-02-02 | 2007-09-13 | Nichia Chem Ind Ltd | Phosphor and light-emitting device using the same |
JP2007217605A (en) | 2006-02-17 | 2007-08-30 | Matsushita Electric Works Ltd | Phosphor and process for producing the same, and light emitting device |
WO2007109978A1 (en) | 2006-03-24 | 2007-10-04 | General Research Institute For Nonferrous Metals, Beijing | A phosphor, its making method and the photo-luminescent device using the same |
US20080036364A1 (en) | 2006-08-10 | 2008-02-14 | Intematix Corporation | Two-phase yellow phosphor with self-adjusting emission wavelength |
US20080128679A1 (en) | 2006-10-03 | 2008-06-05 | Yongchi Tian | Metal silicate halide phosphors and led lighting devices using the same |
Non-Patent Citations (2)
Title |
---|
Ding, W. et al., A novel orange phosphor of Eu2+-activated calcium chlorosilicate for white light-emitting diodes, J. Solid State Chem. (2006); 179: pp. 3582-3585. |
Liu, J. et al., Eu2+-Doped High-Temperature Phase Ca3SiO4Cl2 a Yellowish Orange Phosphor for White Light-Emitting Diodes, J. Electrochem. Soc., (2005); 152: pp. G880-G884. |
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JP2010144170A (en) | 2010-07-01 |
US20100156274A1 (en) | 2010-06-24 |
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