US8513163B2 - Substrate for a superconducting thin-film strip conductor - Google Patents
Substrate for a superconducting thin-film strip conductor Download PDFInfo
- Publication number
- US8513163B2 US8513163B2 US12/126,242 US12624208A US8513163B2 US 8513163 B2 US8513163 B2 US 8513163B2 US 12624208 A US12624208 A US 12624208A US 8513163 B2 US8513163 B2 US 8513163B2
- Authority
- US
- United States
- Prior art keywords
- metal substrate
- buffer layer
- superstructure
- substrate
- lattice constant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active, expires
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming superconductor layers
- H10N60/0576—Processes for depositing or forming superconductor layers characterised by the substrate
- H10N60/0632—Intermediate layers, e.g. for growth control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
Definitions
- the invention is directed toward a high-temperature superconducting thin-film strip conductor and, in particular, toward a conductor having a metal substrate.
- High-temperature superconducting thin-film strip conductors are typically produced starting from a textured metal substrate formed from a face-centered cubic crystallizing metal (e.g., nickel, copper, gold). Nickel is especially suitable, in particular nickel having a few at % tungsten.
- the textured metal substrate is coated with a buffer layer, which transfers the texture of the metal substrate to a superconducting layer generated subsequently on the buffer layer.
- the buffer layer may be formed from materials having a low lattice mismatch to both the metal substrate and the high-temperature superconducting thin-film to be crystallized.
- Exemplary materials include materials that grow rotated by 45° on the metal substrate (e.g., lanthanum zirconate) and materials having fluoride or pyrochloride structure, as well as materials that grow unrotated and possess a perovskite structure (e.g., strontium titanate and calcium titanate) or a spinel structure (e.g., strontium ruthenate and neodymium nickelate).
- a perovskite structure e.g., strontium titanate and calcium titanate
- a spinel structure e.g., strontium ruthenate and neodymium nickelate
- a chalcogenide superstructure (such as a sulfur superstructure) normally forms on the metal substrate.
- This superstructure encourages the epitactic growth of buffer layers deposited via physical methods (e.g., vapor deposition of the metal substrate in high vacuum). Therefore, it is desirable to reproducibly generate a uniform superstructure having a high degree of coverage.
- the physical deposition of the buffer layer is a costly; consequently, it is not suitable for the production of an HTSL-CC, or even its carrier (metal) substrate.
- An HTSL-CC may also be produced utilizing chemical coating methods (e.g., chemical solution deposition (CSD) and metal organic deposition (MOD)), which tend to be more cost effective. Results comparable to those achieved via physical methods, however, have not been achieved in materials that do not grow rotated by 45° (like lanthanum zirconate), or that are unrotated (e.g., strontium titanate, etc). Even if a metal substrate possessing a low surface roughness is used, the resulting structure includes strontium titanate layers are untextured or only weakly textured.
- chemical coating methods e.g., chemical solution deposition (CSD) and metal organic deposition (MOD)
- CSD chemical solution deposition
- MOD metal organic deposition
- HTSL-CC formed via chemical coating methods that use materials that grow unrotated on the substrate, as well as to provide a highly-textured buffer layer and/or superconducting layer.
- the invention is directed toward producing a high-temperature superconducting thin-film strip conductor (HTSL-CC) having highly-textured buffer layer and, in particular, toward processing a metal substrate utilized as a starting material for an HTSL-CC layer.
- the HTSL-CC strip may be formed by providing a biaxially textured metal substrate as a starting material; removing the superstructure of the metal substrate; optionally cleaning the metal substrate after removing the superstructure; chemically generating a buffer layer on the substrate after removing the superstructure; and chemically generating a superconducting coating thereon.
- the superstructure may be a chalcogenide superstructure.
- the buffer layer is grown crystallographically unrotated in relation to the crystal structure metal substrate.
- the buffer layer may be formed from a material having a lattice constant that deviates from that of the metal substrate by less than about ⁇ 15%.
- the metal substrate moreover, may be polished to a surface roughness of less than about 50 nm.
- a superstructure e.g., a chalcogenide superstructure such as a sulfur superstructure
- a superstructure e.g., a chalcogenide superstructure such as a sulfur superstructure
- buffer layers generated using physical methods as well as for buffer layers having a fluoride or pyrochloride structure generated via chemical methods, actually prevents the formation of a good texture in buffer layers chemically generated and formed from materials that grow unrotated, such as those having perovskite or spinel structure.
- the removal of the superstructure before the generation of the buffer layer creates a highly-textured buffer layer.
- the process includes (1) providing a starting material including a superstructure; (2) removing the superstructure from the starting material; (3) chemically generating a buffer layer on the starting material; and (4) forming a superconducting coating thereon.
- the starting material is a metal substrate or strip such as a biaxially textured metal substrate.
- Nickel or a nickel alloy which contains 85 at %, preferably 90 at % nickel, is especially suitable as the metal substrate.
- the metal substrate contains at least 85 at-%, preferably 90 at-% nickel.
- the substrates may be rolled and shaped, as well as crystallized in a batch annealing process.
- a sulfur superstructure may form on the metal substrate through slow cooling in a batch annealing process.
- the metal substrate may be treated before the formation of the buffer layer thereon.
- the metal substrate may be processed (i.e., the superstructure removed) until it possesses a surface roughness (i.e., a root mean square (RMS) roughness, S q ) of about 50 nm or less.
- the metal substrate may possess an RMS of about 20 nm or less, and preferably, of about 10 nm or less.
- the superstructure may be removed utilizing processes such as polishing (e.g., mechanical polishing and electro-polishing), peening (i.e., utilizing peening bodies such as dry ice particles), or selective etching using weakly concentrated nitric acid).
- polishing e.g., mechanical polishing and electro-polishing
- peening i.e., utilizing peening bodies such as dry ice particles
- selective etching using weakly concentrated nitric acid For example, excellent results are obtained when the substrate is polished to a surface roughness of less than 10
- the metal substrate may be cleaned before the formation of the buffer layer, but after the removal of the superstructure.
- the metal substrate may be cleaned via an ultrasonic bath.
- the metal substrate may be degreased utilizing degreasing agents such as acetone and/or isopropanol.
- the buffer layer is chemically generated onto the metal substrate.
- the buffer layer is formed from materials that are grown crystallographically unrotated in relation to the metal substrate.
- a material whose lattice constant deviates from the lattice constant of the metal substrate by less than about ⁇ 15%, preferably less than about ⁇ 10%, is advantageously used for the buffer layer.
- materials forming the buffer layer possess lattice constants that deviate from the lattice constant of the metal substrate by an amount in the range of about ⁇ 5% to +15%.
- titanates, ruthenates, manganates, nickelates, and cuprates are suitable as the buffer layer materials (e.g., CaTiO 3 , La 2 NiO 4 , Sr 2 RuO 4 , NdBa 2 Cu3O x , Gd 2 CuO 4 , SrTiO 3 , Nd 2 CuO 4 , BaTiO 3 , (Ca x Sr 1-x )TiO 3 , and (Sr x Ba 1-x )TiO 3 ).
- the buffer layer may be grown directly onto the surface of the substrate, i.e., without an intermediate layer.
- the superconducting layer may be generated on the buffer layer.
- the chemical generation processes include, but is not limited to, chemical solution deposition (CSD) and metal organic deposition (MOD).
- CSD chemical solution deposition
- MOD metal organic deposition
- coating processes such as spin coating, dip coating, or printing (slot-die casting, inkjet printing) may be utilized.
- the resulting biaxially-textured, metal substrate without a superstructure may be utilized in forming a high-temperature superconducting thin-film strip conductor (HTSL-CC).
- HTSL-CC high-temperature superconducting thin-film strip conductor
- Two different nickel (5 at % tungsten) metal substrates were utilized as the starting material.
- the strips possessed a width of 10 mm and thickness of 80 ⁇ m.
- These metal substrates both had a cubic texture (001) with a full width at half maximum (FWHM) of 5.5°.
- Both substrates were subjected to an identical rolling shaping and subsequently re-crystallized in a batch annealing process.
- a sulfur superstructure formed on both substrates through slow cooling in the batch annealing process.
- the roughness of the two metal substrates was measured using an atomic force microscope (AFM). The measurement for each substrate was:
- ICP-OES inductively coupled plasma optical emission spectrometer
- Solution 3 was produced in a manner similar to that of solution 1, but instead of 0.15 mol strontium acetate, a mixture made of 0.135 mol strontium acetate and 0.015 mol calcium acetate was used. A 0.3 molar coating solution for a calcium-substituted strontium titanate was obtained.
- the cleaned substrate of 5 cm length was first coated on a spin coater at 500 rpm using a coating solution diluted by the factor of 6.
- the dilution was performed using a mixture 2:1 made of glacial acetic acid and methoxy ethanol.
- the temperature treatment was performed under 10% H 2 in N 2 at a temperature of 800° C. for five minutes.
- a seed layer arose in the first coating step due to the dilution of the solutions, i.e., a non-coherent layer (coverage between 20-80%) whose islands act as crystallization seeds for following layers.
- the resulting total layer thickness was 250 nm in each case after three coatings.
- the layer thickness was measured using a profile meter over a layer edge.
Abstract
Description
-
- Substrate 1: RMS=40 nm; sulfur superstructure;
- Substrate 2: RMS=5 nm; sulfur superstructure; and
- Substrate 3: RMS=5 nm; no sulfur superstructure (removed via polishing)
-
- Solution 1: pure strontium titanate (STO)
- Solution 2: niobium-doped STO, electrically conductive
- Solution 3: calcium-doped STO, better lattice matching to the nickel substrate
TABLE I | ||||
Substrate 1 | Substrate 2 | Substrate 3 | ||
I (200)/I (110) | 1 | 2 | 6 | ||
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102007024166A DE102007024166B4 (en) | 2007-05-24 | 2007-05-24 | A method of processing a metal substrate and using it for a high temperature superconductor |
DE102007024166.8 | 2007-05-24 | ||
DE102007024166 | 2007-05-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
US20080293576A1 US20080293576A1 (en) | 2008-11-27 |
US8513163B2 true US8513163B2 (en) | 2013-08-20 |
Family
ID=39768747
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/126,242 Active 2032-04-16 US8513163B2 (en) | 2007-05-24 | 2008-05-23 | Substrate for a superconducting thin-film strip conductor |
Country Status (10)
Country | Link |
---|---|
US (1) | US8513163B2 (en) |
EP (1) | EP1995798A3 (en) |
JP (1) | JP2008293976A (en) |
KR (1) | KR20080103460A (en) |
CN (1) | CN101312084A (en) |
AU (1) | AU2008202268B2 (en) |
CA (1) | CA2630946A1 (en) |
DE (1) | DE102007024166B4 (en) |
NZ (1) | NZ568360A (en) |
TW (1) | TW200923976A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008058768B4 (en) * | 2008-11-24 | 2011-12-15 | Zenergy Power Gmbh | Process for producing metal substrates for HTS layer arrangements |
JPWO2013002410A1 (en) * | 2011-06-30 | 2015-02-23 | 古河電気工業株式会社 | Superconducting thin film substrate, superconducting thin film, and method of manufacturing superconducting thin film substrate |
WO2013073002A1 (en) | 2011-11-15 | 2013-05-23 | 古河電気工業株式会社 | Substrate for superconducting wire rod, method for manufacturing substrate for superconducting wire rod, and superconducting wire rod |
Citations (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5217754A (en) * | 1987-07-27 | 1993-06-08 | Trustees Of The University Of Pennsylvania | Organometallic precursors in conjunction with rapid thermal annealing for synthesis of thin film ceramics |
US5356474A (en) * | 1992-11-27 | 1994-10-18 | General Electric Company | Apparatus and method for making aligned Hi-Tc tape superconductors |
US5958599A (en) * | 1995-04-10 | 1999-09-28 | Lockheed Martin Energy Research Corporation | Structures having enhanced biaxial texture |
WO2000042621A2 (en) | 1999-01-12 | 2000-07-20 | Microcoating Technologies, Inc. | Epitaxial thin films |
US6231666B1 (en) * | 1999-07-20 | 2001-05-15 | Sandia Corporation | Process for forming epitaxial perovskite thin film layers using halide precursors |
US6251834B1 (en) * | 1998-04-27 | 2001-06-26 | Carpenter Technology (Uk) Limited | Substrate materials |
US20020002942A1 (en) * | 2000-04-20 | 2002-01-10 | International Business Machines Corporation | Method for changing surface termination of a perovskite oxide substrate surface |
US6428635B1 (en) * | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
US6451450B1 (en) * | 1995-04-10 | 2002-09-17 | Ut-Battelle, Llc | Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom |
US6458223B1 (en) * | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
DE10143680C1 (en) | 2001-08-30 | 2003-05-08 | Leibniz Inst Fuer Festkoerper | Process for the production of metal strips with high-grade cube texture |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US20040265649A1 (en) * | 2000-08-07 | 2004-12-30 | Superpower, Inc. | Coated high temperature superconducting tapes, articles, and processes for forming same |
US20050016867A1 (en) | 2003-07-21 | 2005-01-27 | Sascha Kreiskott | High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors |
US20050127133A1 (en) * | 2003-12-15 | 2005-06-16 | Venkat Selvamanickam | High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth |
US20060073979A1 (en) | 2004-10-01 | 2006-04-06 | American Superconductor Corp. | Architecture for high temperature superconductor wire |
JP2007115561A (en) | 2005-10-21 | 2007-05-10 | Internatl Superconductivity Technology Center | Tape-shaped rare-earth group oxide superconductor and its manufacturing method |
US20070179063A1 (en) * | 2006-01-10 | 2007-08-02 | American Superconductor Corporation | Fabrication of sealed high temperature superconductor wires |
WO2008000485A1 (en) | 2006-06-29 | 2008-01-03 | Zenergy Power Gmbh | Method for applying a metallic covering layer to a high-temperature superconductor |
WO2010058031A1 (en) | 2008-11-24 | 2010-05-27 | Zenergy Power Gmbh | Method for producing metal substrates for hts coating arrangements |
US7727579B2 (en) | 2004-08-05 | 2010-06-01 | Zenergy Power Gmbh | Process for the production of highly-textured, band-shaped, high-temperature superconductors |
US7884050B2 (en) | 2006-04-20 | 2011-02-08 | Zenergy Power Gmbh | Band-shaped high-temperature superconductor (HTSL) and method of producing |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7033637B1 (en) * | 1999-01-12 | 2006-04-25 | Microcoating Technologies, Inc. | Epitaxial thin films |
JP4200843B2 (en) * | 2003-08-04 | 2008-12-24 | 住友電気工業株式会社 | Thin film superconducting wire and manufacturing method thereof |
JP2005056754A (en) * | 2003-08-06 | 2005-03-03 | Sumitomo Electric Ind Ltd | Superconductive wire and its manufacturing method |
JP2005276465A (en) * | 2004-03-23 | 2005-10-06 | Sumitomo Electric Ind Ltd | Superconducting wire rod |
WO2007009095A2 (en) * | 2005-07-13 | 2007-01-18 | Los Alamos National Security, Llc | Coated conductors |
JP4741326B2 (en) * | 2005-09-07 | 2011-08-03 | 株式会社フジクラ | Oxide superconducting conductor and manufacturing method thereof |
US7627356B2 (en) * | 2006-07-14 | 2009-12-01 | Superpower, Inc. | Multifilament AC tolerant conductor with striated stabilizer and devices incorporating the same |
US7879763B2 (en) * | 2006-11-10 | 2011-02-01 | Superpower, Inc. | Superconducting article and method of making |
KR100766052B1 (en) * | 2006-11-10 | 2007-10-12 | 학교법인 한국산업기술대학 | Filament type coated superconductor and the method for fabricating the same |
-
2007
- 2007-05-24 DE DE102007024166A patent/DE102007024166B4/en active Active
-
2008
- 2008-04-24 EP EP08007957A patent/EP1995798A3/en not_active Withdrawn
- 2008-05-08 CA CA002630946A patent/CA2630946A1/en not_active Abandoned
- 2008-05-13 TW TW097117605A patent/TW200923976A/en unknown
- 2008-05-19 NZ NZ568360A patent/NZ568360A/en not_active IP Right Cessation
- 2008-05-22 AU AU2008202268A patent/AU2008202268B2/en not_active Ceased
- 2008-05-23 CN CNA200810109064XA patent/CN101312084A/en active Pending
- 2008-05-23 JP JP2008135080A patent/JP2008293976A/en active Pending
- 2008-05-23 KR KR1020080048035A patent/KR20080103460A/en not_active Application Discontinuation
- 2008-05-23 US US12/126,242 patent/US8513163B2/en active Active
Patent Citations (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5217754A (en) * | 1987-07-27 | 1993-06-08 | Trustees Of The University Of Pennsylvania | Organometallic precursors in conjunction with rapid thermal annealing for synthesis of thin film ceramics |
US5356474A (en) * | 1992-11-27 | 1994-10-18 | General Electric Company | Apparatus and method for making aligned Hi-Tc tape superconductors |
US5958599A (en) * | 1995-04-10 | 1999-09-28 | Lockheed Martin Energy Research Corporation | Structures having enhanced biaxial texture |
US6451450B1 (en) * | 1995-04-10 | 2002-09-17 | Ut-Battelle, Llc | Method of depositing a protective layer over a biaxially textured alloy substrate and composition therefrom |
US6428635B1 (en) * | 1997-10-01 | 2002-08-06 | American Superconductor Corporation | Substrates for superconductors |
US6458223B1 (en) * | 1997-10-01 | 2002-10-01 | American Superconductor Corporation | Alloy materials |
US6251834B1 (en) * | 1998-04-27 | 2001-06-26 | Carpenter Technology (Uk) Limited | Substrate materials |
WO2000042621A2 (en) | 1999-01-12 | 2000-07-20 | Microcoating Technologies, Inc. | Epitaxial thin films |
US6231666B1 (en) * | 1999-07-20 | 2001-05-15 | Sandia Corporation | Process for forming epitaxial perovskite thin film layers using halide precursors |
US20020002942A1 (en) * | 2000-04-20 | 2002-01-10 | International Business Machines Corporation | Method for changing surface termination of a perovskite oxide substrate surface |
US20040265649A1 (en) * | 2000-08-07 | 2004-12-30 | Superpower, Inc. | Coated high temperature superconducting tapes, articles, and processes for forming same |
DE10143680C1 (en) | 2001-08-30 | 2003-05-08 | Leibniz Inst Fuer Festkoerper | Process for the production of metal strips with high-grade cube texture |
US7285174B2 (en) | 2001-08-30 | 2007-10-23 | Leibniz-Institut Fuer Festkoerper-Und Werkstoffforschung Dresden E.V. | Method for producing metallic strips |
US20040069991A1 (en) * | 2002-10-10 | 2004-04-15 | Motorola, Inc. | Perovskite cuprate electronic device structure and process |
US20050016867A1 (en) | 2003-07-21 | 2005-01-27 | Sascha Kreiskott | High current density electropolishing in the preparation of highly smooth substrate tapes for coated conductors |
US20050127133A1 (en) * | 2003-12-15 | 2005-06-16 | Venkat Selvamanickam | High-throughput ex-situ method for rare-earth-barium-copper-oxide (REBCO) film growth |
US7727579B2 (en) | 2004-08-05 | 2010-06-01 | Zenergy Power Gmbh | Process for the production of highly-textured, band-shaped, high-temperature superconductors |
US20060073979A1 (en) | 2004-10-01 | 2006-04-06 | American Superconductor Corp. | Architecture for high temperature superconductor wire |
JP2007115561A (en) | 2005-10-21 | 2007-05-10 | Internatl Superconductivity Technology Center | Tape-shaped rare-earth group oxide superconductor and its manufacturing method |
US20070179063A1 (en) * | 2006-01-10 | 2007-08-02 | American Superconductor Corporation | Fabrication of sealed high temperature superconductor wires |
US7884050B2 (en) | 2006-04-20 | 2011-02-08 | Zenergy Power Gmbh | Band-shaped high-temperature superconductor (HTSL) and method of producing |
WO2008000485A1 (en) | 2006-06-29 | 2008-01-03 | Zenergy Power Gmbh | Method for applying a metallic covering layer to a high-temperature superconductor |
WO2010058031A1 (en) | 2008-11-24 | 2010-05-27 | Zenergy Power Gmbh | Method for producing metal substrates for hts coating arrangements |
Non-Patent Citations (7)
Title |
---|
Cantoni, C. et al., "Quantification and Control of the Sulfur c(2x2) superstructure on (100)(100) Ni for optimization of YSZ, CeO2, and SrTi03 seed layer texture," J. Mater. Res., vol. 17, No. 10, (Oct. 2002). |
Cantoni', C. et al., Growth of Oxide Seed Layers . . . Texture Optimization, IEEE Transactions on Applied Superconductivity, vol. 13, No. 2, Jun. 2003, p. 2646-2650. |
Dawley, J.T., et al., Chemical solution deposition of . . . Ni substrates, Sandia National Laboratories, Albuquerque, New Mexico, J. Mater, Res., vol. 17, No. 7, Jul. 2002, p. 1678-1685. |
Paranthaman et al., Improved YBCO Coated Conductors Using Alternate Buffer Architectures, IEEE Transactions on Applied Superconductivity, vol. 15, No. 2, Jun. 2005, pp. 2632-2634. |
Stadel et al. "Electrically conducting oxide buffer layers on biaxially textured nickel alloy tapes by reel-to-reel MOCVD process." Journal of Physics: Conference Series 43 (2006) pp. 203-206. * |
Stewart et al., Studies of solution deposited cerium oxide thin films on textured Ni-alloy substrates for YBCO superconductor, www.sciencedirect.com, Materials Research Bulletin 41 (2006), 1063-1068. |
Zhou et al., Strontium titanate buffer layers deposited on rolled Ni substrates with metal organic deposition, Superconductor Science and Technology, Jul. 9, 2003, pp. 901-906, Texas Center for Superconductivity and Advanced Materials, University of Houston. |
Also Published As
Publication number | Publication date |
---|---|
DE102007024166B4 (en) | 2011-01-05 |
CN101312084A (en) | 2008-11-26 |
EP1995798A2 (en) | 2008-11-26 |
KR20080103460A (en) | 2008-11-27 |
TW200923976A (en) | 2009-06-01 |
NZ568360A (en) | 2009-09-25 |
AU2008202268B2 (en) | 2010-03-25 |
US20080293576A1 (en) | 2008-11-27 |
AU2008202268A1 (en) | 2008-12-11 |
EP1995798A3 (en) | 2010-11-10 |
JP2008293976A (en) | 2008-12-04 |
CA2630946A1 (en) | 2008-11-24 |
DE102007024166A1 (en) | 2008-12-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4690246B2 (en) | Superconducting thin film material and manufacturing method thereof | |
US6468591B1 (en) | Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates | |
US20120040100A1 (en) | Solution deposition planarization method | |
US8513163B2 (en) | Substrate for a superconducting thin-film strip conductor | |
US8633138B2 (en) | Method for depositing oxide films on textured metal pipes | |
KR20170130489A (en) | Method of manufacturing high-temperature superconductor wire | |
US8426344B2 (en) | Method for producing metal substrates for HTS coating arrangements | |
US8465793B2 (en) | Process for the preparation of a shaped substrate for a coated conductor | |
US8673821B2 (en) | Coated conductor with improved grain orientation | |
Pomar et al. | All-chemical YBa2Cu3O7 coated conductors on IBAD-YSZ stainless steel substrates | |
JP5218113B2 (en) | Dielectric element manufacturing method | |
CN106415867B (en) | The method of compound of the production comprising high-temperature superconductor (HTS) layer | |
JP2011253768A (en) | Method of manufacturing oxide superconductor thin film | |
DE112013001279B4 (en) | Semiconductor component with an oriented layer and method for its production | |
Wu et al. | Effects of Sputter-Deposited LaNiO 3 Electrode on the Deposition and Properties of Ferroelectric Thin Films | |
JP2011054531A (en) | Manufacturing method for oxide superconductive thin film, and superconductive wire | |
WO2015033380A1 (en) | Superconducting wire and method of fabricating the same | |
Kim et al. | Fabrication of $ CeO_2 $ Buffer Layer Using MOD Process |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ZENERGY POWER GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BAECKER, MICHAEL;REEL/FRAME:020999/0482 Effective date: 20080509 |
|
AS | Assignment |
Owner name: ZENERGY POWER GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAECKER, MICHAEL;SCHNELLER, THEODOR;HALDER, SANDIP;REEL/FRAME:022683/0481;SIGNING DATES FROM 20090403 TO 20090427 Owner name: ZENERGY POWER GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:BAECKER, MICHAEL;SCHNELLER, THEODOR;HALDER, SANDIP;SIGNING DATES FROM 20090403 TO 20090427;REEL/FRAME:022683/0481 |
|
AS | Assignment |
Owner name: BASF SE, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ZENERGY POWER GMBH;REEL/FRAME:028533/0329 Effective date: 20120604 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
FPAY | Fee payment |
Year of fee payment: 4 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |
|
AS | Assignment |
Owner name: AMERICAN SUPERCONDUCTOR CORPORATION, MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:BASF SE;REEL/FRAME:056441/0516 Effective date: 20201001 |