US9673286B2 - Group III-V transistor with semiconductor field plate - Google Patents
Group III-V transistor with semiconductor field plate Download PDFInfo
- Publication number
- US9673286B2 US9673286B2 US14/531,181 US201414531181A US9673286B2 US 9673286 B2 US9673286 B2 US 9673286B2 US 201414531181 A US201414531181 A US 201414531181A US 9673286 B2 US9673286 B2 US 9673286B2
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- field plate
- group iii
- gate
- semiconductor field
- layer
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- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000012212 insulator Substances 0.000 claims abstract description 21
- 230000005533 two-dimensional electron gas Effects 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 22
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 21
- 229910002601 GaN Inorganic materials 0.000 claims description 20
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052710 silicon Inorganic materials 0.000 description 6
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- 229910052733 gallium Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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- 239000000203 mixture Substances 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
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- 150000004767 nitrides Chemical class 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
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- 208000032750 Device leakage Diseases 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000756 V alloy Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000011067 equilibration Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
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- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/405—Resistive arrangements, e.g. resistive or semi-insulating field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (12)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/531,181 US9673286B2 (en) | 2013-12-02 | 2014-11-03 | Group III-V transistor with semiconductor field plate |
JP2014234485A JP6113135B2 (en) | 2013-12-02 | 2014-11-19 | III-V transistor including semiconductor field plate |
EP14193796.1A EP2879184A1 (en) | 2013-12-02 | 2014-11-19 | Group III-V transistor with semiconductor field plate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201361910522P | 2013-12-02 | 2013-12-02 | |
US14/531,181 US9673286B2 (en) | 2013-12-02 | 2014-11-03 | Group III-V transistor with semiconductor field plate |
Publications (2)
Publication Number | Publication Date |
---|---|
US20150155358A1 US20150155358A1 (en) | 2015-06-04 |
US9673286B2 true US9673286B2 (en) | 2017-06-06 |
Family
ID=51900822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US14/531,181 Active US9673286B2 (en) | 2013-12-02 | 2014-11-03 | Group III-V transistor with semiconductor field plate |
Country Status (3)
Country | Link |
---|---|
US (1) | US9673286B2 (en) |
EP (1) | EP2879184A1 (en) |
JP (1) | JP6113135B2 (en) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6230456B2 (en) * | 2014-03-19 | 2017-11-15 | 株式会社東芝 | Semiconductor device |
JP6401053B2 (en) * | 2014-12-26 | 2018-10-03 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method of semiconductor device |
CN107924845A (en) * | 2015-08-28 | 2018-04-17 | 夏普株式会社 | Nitride compound semiconductor device |
US10283598B2 (en) * | 2016-05-06 | 2019-05-07 | Hangzhou Dianzi University | III-V heterojunction field effect transistor |
US10096702B2 (en) | 2016-06-01 | 2018-10-09 | Efficient Power Conversion Corporation | Multi-step surface passivation structures and methods for fabricating same |
KR20180068172A (en) * | 2016-12-13 | 2018-06-21 | (주)웨이비스 | A HEMT and manufacturing method thereof |
US11508821B2 (en) * | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
WO2020010253A1 (en) | 2018-07-06 | 2020-01-09 | Analog Devices, Inc. | Compound device with back-side field plate |
US11121245B2 (en) | 2019-02-22 | 2021-09-14 | Efficient Power Conversion Corporation | Field plate structures with patterned surface passivation layers and methods for manufacturing thereof |
US11424356B2 (en) * | 2020-03-16 | 2022-08-23 | Raytheon Company | Transistor having resistive field plate |
US20230122090A1 (en) * | 2021-10-18 | 2023-04-20 | Analog Devices, Inc. | Electric field management in semiconductor devices |
CN117423724A (en) * | 2023-12-01 | 2024-01-19 | 江苏希尔半导体有限公司 | High withstand voltage GaN HEMT device |
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2014
- 2014-11-03 US US14/531,181 patent/US9673286B2/en active Active
- 2014-11-19 JP JP2014234485A patent/JP6113135B2/en active Active
- 2014-11-19 EP EP14193796.1A patent/EP2879184A1/en not_active Withdrawn
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Also Published As
Publication number | Publication date |
---|---|
US20150155358A1 (en) | 2015-06-04 |
JP2015111670A (en) | 2015-06-18 |
EP2879184A1 (en) | 2015-06-03 |
JP6113135B2 (en) | 2017-04-12 |
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