USRE36113E - Method for fine-line interferometric lithography - Google Patents
Method for fine-line interferometric lithography Download PDFInfo
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- USRE36113E USRE36113E US08/635,565 US63556596A USRE36113E US RE36113 E USRE36113 E US RE36113E US 63556596 A US63556596 A US 63556596A US RE36113 E USRE36113 E US RE36113E
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- interference pattern
- photosensitive layer
- pattern
- subsequent
- exposure
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/001—Phase modulating patterns, e.g. refractive index patterns
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/153—Multiple image producing on single receiver
Definitions
- This invention relates to microelectronic circuits and more particularly to the use of interferometric patterning in optical lithography to produce complex, high density integrated circuit structures.
- DRAM dynamic random access memory
- Imaging optical lithography in which a mask image is projected onto a photoresist layer on the wafer, dominates today's manufacturing.
- Two equations describing the optical diffraction of the optical system determine the characteristics of the image.
- the minimum resolution, r is proportional to the lens numerical aperture, or
- the present invention provides complex, two-dimensional patterns in integrated circuits through the use of multiple grating exposures on the same or different photoresist layers and the use of complex amplitude and phase masks in one or both of the beams of illuminating coherent radiation.
- Complex, two-dimensional patterns as used herein means a pattern of multiple, interconnected and/or unconnected straight or curved lines or bodies spaced apart from each other.
- Extreme submicron range means distances of the order of 0.1 ⁇ m or 100 nm or less between lines.
- Interferometric lithography may be combined with conventional lithography for the production of extreme submicrometer structures and the flexible interconnect technology necessary to produce useful structures.
- a critical dimension (CD) of the order of 60 nm with a pitch of 187 nm is obtainable through the process of the invention.
- a pitch of 124 nm and a CD of 41 nm can be attained.
- Further extension to a ArF excimer laser at 193 nm will proportionately reduce these dimensions.
- this technique can be adapted to produce still smaller structures.
- the photoresist exposure process of the invention takes advantage of the fact that, in terms of dimensional thicknesses of photoresists (typically 1-2 ⁇ m), there are no DOF limitations for the two interfering coherent optical beams. That is, for two interfering plane waves, there is no z or depth dependence of the pattern in the direction bisecting their propagation directions.
- the depth of field dependence is set usually by the shorter of the beam cofocal parameter or, less usually, the laser coherence length.
- the confocal parameter is many centimeters.
- the laser coherence length is on the order of meters.
- the DOF of interferometric lithography is essentially unlimited on the micrometer scale of the thin-films employed in semiconductor manufacturing.
- Another feature of the process in accordance with the invention involves the provision of large dimensions over which a sub-micron structure may be fabricated.
- Interferometrically defined gratings have long been available with dimensions up to 5 ⁇ 25 cm 2 or larger, approximately a factor of 10 larger in linear dimension than the typical field sizes of today's integrated circuits. Further, this can be achieved at ultraviolet wavelengths for which photoresist is already well developed.
- FIGS. 1 and 2 are diagrammatic views of alternative versions of apparatus employed to carry out the process of the invention
- FIG. 3 is a scanning electron microscopic (SEM) view of an exposed and developed latent image in a photoresist from which patterns may be formed in a semiconductor wafer;
- FIGS. 4-7 are SEM views of different complex two-dimensional patterns produced from the developed photoresist image in FIG. 3 in a semiconductor wafer depending on the kind of transfer process used;
- FIGS. 8-14 are SEM views of other complex two-dimensional patterns fabricated in semiconductive material in accordance with the invention.
- FIG. 15 is a view of a cross section of a phase-amplitude mask in accordance with an embodiment of the invention.
- FIGS. 16-19 are schematic views of exposure stages illustrating the process of making an interdigitated or interleaved structure in accordance with an embodiment of the invention.
- FIG. 20 is a SEM view of an interdigitated structure produced by the method outlined.
- FIG. 21 is an illustration of an embodiment of the invention when used in combination with conventional imaging lithography to produce a single, isolated line constituting the pattern.
- a wafer 11 having a photosensitive layer 13 and substrate 14 is positioned on a movable table 15.
- the table 15 is supported on a shaft 17 and is arranged to be rotated and translated in two-dimensions respectively via controls 19 and 21 which control mechanical rotational and translational motion producing motors and linkages generally indicated by the numeral 23.
- the motors and linkages 23 and controls 19 and 21 need not be shown in detail since they are well known in the art and may be of any suitable well known construction.
- Coherent optical beams 25 and 27 provided by any suitable well known source or sources are directed at a variable angle A from the vertical or system axis 29 toward each other and toward the photoresist layer 13 to form an interference pattern on the photosensitive layer 13.
- the arrangement shown in FIG. 2 is identical to that of FIG. 1 with the addition of a phase-amplitude mask 31 in the path of beam 25 or a phase-amplitude mask 33 in the path of both beams 25 and 27 in their interference region at the surface of the photosensitive layer 13, or both
- the beams 25 and 27 of coherent radiation may be lasers and may be provided in any suitable well known manner so that they are from the same source and are essentially equal in intensity at the wafer which assures a high contrast exposure.
- the complex interference pattern produced on the photoresist layer or layers is varied by (a) rotating the wafer, (b) translating the wafer, (c) both rotating and translating the wafer, (d) changing the angle A, (e) varying the number of exposures, (f) varying the optical intensity. (g) using a phase/amplitude mask in one or both illuminating beams of coherent radiation, or (h) employing any combination of (a)-(g). Further flexibility is offered by a combination of any of (a)-(g) with conventional or imaging lithography techniques as are well known.
- a single or multiple set of interferometric exposures are carried out in photosensitive layer.
- the subsequent pattern is then developed and transferred to a semiconductor substrate by any of the well known commercially available techniques.
- This substrate is then again recoated with a photoresistive layer, and single or multiple exposure processes can be repeated with the aid of the alignment position sensing arrangement described in Brueck, et al. in U.S. Pat No. 4,987,461.
- the image depicted is a rectilinear array of circular dots on the photosensitive layer about 300 nm apart from each other in the x and y axes.
- the photoresist layer is developed and transferred into the Si sample by a plasma-etch process.
- the interiors of the circles are etched into the Si.
- a potentially very large scale application of structures such as this is in the fabrication of field-emission flat panel displays which require large fields (up to large-screen television size or greater) of submicrometer field emitter tips.
- This lithography is preferably be carried out on glass plates which are much less polished than today's Si wafers.
- FIG. 3 may then be transformed into the grating structure shown in FIGS. 4-7 by any of several well known processes as follows: FIG. 4--by plasma etching into silicon; FIG. 5--by reactive ion etching into GaAs; FIG. 6--by wet chemical etching into silicon, and FIG. 7--by ion beam milling into silicon.
- FIGS. 8-14 the patterns shown therein are produced by plasma etching from photoresists having complex images thereon produced by the imaging scheme of the present invention as indicated in the following table 1:
- Phase/amplitude masks may take any desired form depending on the desired pattern.
- the mask 41 shown in FIG. 15 has two thickness-varied (i.e., path length-varied on the scale of the frequency of the coherent beam radiation), phase modification sections 43 and 45 and two amplitude or shadow or stenciled sections 47 and 49.
- a mask need only have phase or amplitude portions or both.
- FIG. 19 An example of patterning employing a mask is provided in the highly useful, interleaved or interdigitated structure shown in the embodiment of the invention of FIGS. 16-19.
- the end result pattern shown in FIG. 19 is produced by first exposing a 1- ⁇ m pitch grating over the entire area of the photoresist to produce the exposed photoresist image pattern shown in FIG. 167.
- two sequential exposures are made through a simple shadow mask (e.g., a mask such as is shown in FIG. 15 with either shadow portion 47 or 49) at twice the pitch (2 ⁇ m) over the top and bottom halves of the wafer as shown in FIGS. 17 and 18.
- a simple shadow mask e.g., a mask such as is shown in FIG. 15 with either shadow portion 47 or 49
- the wafer is then translated by 1 ⁇ m between these two later exposures so that alternate lines of the original grating are eliminated above and below the pattern to produce the pattern shown in FIG. 19.
- the structure shown in the SEM of FIG. 20 was fabricated by the foregoing process.
- the following Table II shows the steps taken to produce the image shown in FIG. 20.
- the image in the photosensitive layer 13 is essentially the same as the image produced by plasma etching, and in producing the image, the wafer was not rotated about axis 29 and instead was translated and apertures were located in the position 33 as shown in FIG. 2.
- Such an interdigitated structure with submicrometer spaces of about 100 nm between the fingers has application. for example, as a large area submicrometer particle detector by fabricating an interdigitated metal grid structure and monitoring the conductivity induced by small numbers of particles shorting out the fingers.
- FIG. 21 shows an embodiment of the invention used in combination with conventional lithography.
- the combining of the interferometric lithography of the present invention with conventional imaging lithography adds other possibilities to the structures that may be fabricated.
- FIG. 21 illustrates the fabrication of an isolated line with a submicrometer critical dimension (CD) using a relatively coarse pitch (say 1-2 ⁇ m) grating structure and isolating a single line with a box defined by conventional lithography.
- a grating 51 is exposed on the photosensitive layer using a 1 ⁇ m pitch.
- the next exposure is made via a mask to provide a 1.5 ⁇ m wide box 53 which masks out the other lines of the grating.
- the end result is the desired single line 55 which will result after appropriate fabrication such as plasma etching.
- Single lines have immediate use, for example, as the gate structure in high-speed field-effect transistors (FET).
- FET field-effect transistors
- Commercial devices currently have gate dimensions of ⁇ 0.25 ⁇ m, fabricated by c-beam lithography.
- Laboratory research devices have been made with gates as small as 5 nm using focused ion-beam lithography. Both of these are serial processes in which each gate must be written sequentially resulting in low throughput and yield.
- the present invention offers the possibility of parallel writing of submicrometer gates throughout a large field of view circuit or set of circuits, very much as integrated circuits are conventionally fabricated. This will result in dramatically reduced manufacturing cost and improved yield.
Abstract
Description
r˜1/NA
DOF˜1/(NA).sup.2
TABLE 1 ______________________________________ Period Rotation Beam Angle FIG Exposure (mm) (deg) (deg) ______________________________________ 8 First 1.0 micron 0-deg 14-deg Second 2.0 0-deg 7-deg Third 1.0 90-deg 14-deg Fourth 2.0 90-deg 7-deg 9 First 1.0 micron 0-deg 14-deg Second 1.5 0-deg 9.4-deg Third 1.0 90-deg 14-deg Fourth 1.5 90-deg 9.4-deg 10 First 0.6 micron 0-deg 24-deg Second 0.7 0-deg 20.4-deg Third 0.8 0-deg 17.8-deg Fourth 0.6 90-deg 24-deg Fifth 0.7 90-deg 20.4-deg Sixth 0.8 90-deg 17.8-deg 11 First 0.95 micron 0-deg 15-deg Second 1.0 0-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 85-deg 14-deg 12 First 0.95 0-deg 15-deg Second 1.0 5-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 85-deg 14-deg 13 First 0.95 micron 0-deg 15-deg Second 1.0 5-deg 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 90-deg 14-deg 14 First 0.95 micron 0-deg 15-deg Second 1.0 0-deg0 14-deg Third 0.95 90-deg 15-deg Fourth 1.0 90-deg 14-deg ______________________________________
I(x)=A{1+sin (qx+φ)} (1)
S(x)=ΣA.sub.n sin (nqx+φ) (2)
S(r)=ΣΣA.sub.nm sin (nq.sub.m ·r+φ.sub.m).(3)
TABLE II ______________________________________ Beam Period Translation Angle Aperture FIG No. Exp (μm) (μm) (deg.) location ______________________________________ 20 first 1.0 0.0 14 none second 2.0 0.0 7 top third 2.0 1.0 7 bottom ______________________________________
Claims (12)
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US08/635,565 USRE36113E (en) | 1992-09-16 | 1996-04-22 | Method for fine-line interferometric lithography |
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US07/945,776 US5415835A (en) | 1992-09-16 | 1992-09-16 | Method for fine-line interferometric lithography |
US08/635,565 USRE36113E (en) | 1992-09-16 | 1996-04-22 | Method for fine-line interferometric lithography |
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