USRE40282E1 - Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device - Google Patents
Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device Download PDFInfo
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- USRE40282E1 USRE40282E1 US10/145,606 US14560602A USRE40282E US RE40282 E1 USRE40282 E1 US RE40282E1 US 14560602 A US14560602 A US 14560602A US RE40282 E USRE40282 E US RE40282E
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- transistor
- integrated circuit
- test mode
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1045—Read-write mode select circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/46—Test trigger logic
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/18—Address timing or clocking circuits; Address control signal generation or management, e.g. for row address strobe [RAS] or column address strobe [CAS] signals
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/153—Arrangements in which a pulse is delivered at the instant when a predetermined characteristic of an input signal is present or at a fixed time interval after this instant
- H03K5/1534—Transition or edge detectors
Definitions
- the present invention relates generally to Integrated Circuit (IC) memory devices and more specifically to entry of an integrated circuit memory device into a test mode.
- IC Integrated Circuit
- Integrated circuit memory devices are routinely subjected to myriad types of test modes. These test modes may be used to subject the integrated circuit device to functional testing, to burn-in testing, and to stress testing, to name just a few examples of testing.
- a major concern with integrated circuit devices capable of entering a test mode to be tested is accidental entry into the test mode when the device is not to be tested.
- Such false entry of an integrated circuit memory device into a test mode is typically caused by a voltage spiking condition of a voltage supplied to the integrated circuit memory device. False entry is exacerbated when the integrated circuit is placed in a noisy environment.
- Any means for preventing false entry of the device into the test mode should protect the device while in a noisy environment in which the device may be subjected to a voltage spiking condition of a supply voltage.
- an integrated circuit structure and method provides for the integrated circuit device to respond to an edge transition detection (ETD) pulse in one of two ways.
- ETD edge transition detection
- the integrated circuit device exits a test mode at least temporarily every cycle of the integrated circuit device.
- a node of the integrated circuit device is reinitialized every cycle if it is not forced by a super voltage indicative of test mode entry. Both of these responses prevent accidental entry of the integrated circuit device into the test mode. If the integrated circuit device is supposed to be in the test mode, it stays in the test mode. If, however, the integrated circuit device is not intended to be in the test mode, the ETD pulse forces the integrated circuit device out of the test mode.
- the ETD pulse creates a DC current path that exists only for the duration of the ETD pulse and therefore current dissipation of the integrated circuit device is minimized.
- the integrated circuit structure has a node that the ETD pulse initializes every cycle of the integrated circuit device.
- the ETD pulse is triggered by a change in the state of an address pin or other control pin of the integrated circuit device.
- the ETD pulse controls an ETD transistor connected to a node of the integrated circuit device.
- the node is controlled by a diode stack having one or more diodes or by the ETD transistor.
- the node is capable of being quickly discharged to protect against Vcc noise spikes that can trigger false entry into a test mode.
- the ETD pulse controls the gates of one or more ETD transistors, with each ETD transistor being connected to a bipolar transistor.
- Each ETD transistor operates to ensure that the emitter of the bipolar transistor to which it is connected is Vbe volts lower than the base voltage Vb of the bipolar transistor in order to counter leakage between the collector and the emitter of the bipolar transistor.
- the ETD transistor is capable of quickly discharging the node to protect against Vcc noise spikes that can trigger false entry into a test mode.
- FIG. 1 is a burn-in stress test mode circuit, according to the present invention.
- FIG. 2 is a device representation of a diode of a diode stack, according to the present invention.
- FIG. 3 is an alternate embodiment of stress test mode circuitry, according to the present invention.
- the present invention provides a burn-in stress test mode that is capable of disabling a time-out feature of an IC memory device during a stress test mode of the device in order to facilitate stress testing of the device in a burn-in oven in a timely and economical manner.
- the time-out feature of an IC memory device is disabled during the burn-in stress test mode by leaving on the wordlines of the device for the duration of the memory cycle for maximum burn-in efficiency.
- a major concern of the present invention is the ability to enter into the burn-in stress test mode at the package level of the device.
- many IC memory devices there may be no pins available which may be dedicated to enable or enter the burn-in stress test mode.
- any pin sequence or combination of pin sequences may be needed for device operation and thus the use of device pins to enter the burn-in stress test mode is not a feasible solution.
- the use of a greatly elevated voltage such as 15 volts for a CMOS (complementary metal oxide silicon) device on the device pin is likewise an unworkable solution in light of the fact that burn-in ovens do not accommodate the use of greatly elevated voltage levels.
- Operating conditions for the normal operating mode and the burn-in operating mode of an integrated circuit memory device differ with respect to voltage levels and temperature ranges.
- the temperature of an integrated circuit device tracks changes in operating voltage of the device.
- the 1 Meg SRAM memory device has a normal operating range of approximately 2.7 volts to 3.6 volts at a maximum temperature of approximately 85 degrees Celsius.
- Burn-in of the integrated circuit memory device occurs at significantly higher voltage and temperature conditions in order to accelerate weak bit failures and infant life failures.
- burn-in of the 1 Meg SRAM device during the burn-in operating mode may occur at 6 volts and 125 degrees Celsius.
- the differences in voltage operating conditions between normal operation and burn-in operation are used by the present invention to accomplish entry into the burn-in stress test mode only during the elevated voltage condition consistent with burn-in operation. Entry into the burn-in stress test mode is accomplished internally to the memory device upon sensing the elevated voltage and/or temperature condition characteristic of burn-in operation. Thus, no external control through the device pins is required for entry into the burn-in stress test mode.
- burn-in stress test mode circuit 10 detects when supply voltage Vcc to the device exceeds a predetermined voltage level and accommodates entry into the stress test mode when the predetermined voltage level is exceeded.
- Circuit 10 has n number of diodes 20 a . . . 20 n; fuses 21 a, 21 b; n-channel MOS transistors 22 , 24 , 26 , 28 , 36 , 38 , 40 , and 50 ; p-channel MOS transistors 30 , 32 , 34 , and 42 ; inverter 44 ; logic element NAND gate 46 ; and burn-in flag 54 .
- Transistors 32 , 34 , 36 , 38 , 40 , and 42 form Schmitt trigger 31 .
- Power-On Reset (POR) signal 12 ETD (Edge Transition Detection) signal 14 , No Connect signal (NC) 16 attached to a No Connect pin not shown, and Control bar signal 18 are supplied to circuit 10 .
- Circuit 10 generates Burn-In Mode bar signal 58 .
- Burn In Flag 54 indicates when the IC device is in the burn-in mode; alternately, a weak transistor 50 is connected to an input or an output Device Pin 48 through which the device may be monitored to determine if it is in the burn-in test mode.
- Node n 1 is formed by the electrical connection of the output of programmable diode stack 20 a . . . 20 n, the source/drains of transistors 22 , 24 , and 30 , and the gates of transistors 32 , 34 , 36 , 38 of Schmitt trigger 31 as shown in FIG. 1 .
- diode stack 20 a . . . 20 n is shown as having a number of diodes, diode stack can be comprised of just one diode or any number of diodes.
- Transistor 22 is a very weak transistor and thus node n 1 is characterized as having a very weak static load on it.
- Transistor 24 is a strong transistor whose gate is controlled by POR signal 12 .
- Transistor 26 is a weak transistor whose gate is controlled by EDT signal 14 .
- Transistors 32 , 34 , 36 , 38 are serially connected as shown in FIG. 1 , with a first source/drain of transistor 32 connected to supply voltage Vcc and a second source/drain of transistor 38 connected to supply voltage Vss.
- Transistor 40 has a first source/drain connected to supply voltage Vcc and a second source/drain connected to the common node formed by a second source/drain of transistor 36 and a first source/drain of a transistor 38 .
- the gate of transistor 40 is connected to a second source/drain of transistor 34 , a first source/drain of transistor 36 , the gate of transistor 42 , and the input terminal of inverter 44 to form node n 2 .
- a first source/drain of transistor 42 is connected to a second source/drain of transistor 32 and a second source/drain of transistor 34 ; a second source/drain of transistor 42 is connected to supply voltage Vss.
- Node n 3 is formed by the output terminal of inverter 44 and a first input terminal of logic element NAND gate 46 .
- a second input terminal of NAND gate 46 is driven by NC signal 16 .
- NAND gate 46 generates Burn-In Mode bar signal 58 .
- Diode stack 20 a . . . 20 n is made programmable by the presence of fuses 21 which may be connected in parallel with a diode 20 of diode stack 20 a . . . 20 n as shown. Blowing a fuse 21 causes the diode 20 to which the fuse 21 is connected in parallel to be included in the diode stack 20 a . . . 20 n, since the diode 20 will no longer be shorted out once the fuse 21 is blown. Thus, in the example shown in FIG. 1 , blowing fuse 21 a but not blowing fuse 21 b would result in diode 20 a being included in diode stack 20 a . . .
- a fuse 21 may or may not be placed in parallel with a diode 20 of diode stack 20 a . . . 20 n; as shown in FIG. 1 , diodes 20 a and 20 b have fuses 21 a and 21 b connected in parallel with them, respectively, while diodes 20 n- 1 and 20 n do not have a fuse connected in parallel with them.
- the decision of how many of the diodes 20 of diode stack 20 a . . . 20 n should be connected in parallel with a fuse 21 is a function of the level of programmability desired for the diode stack 20 a . . . 20 n.
- POR signal 12 pulses high which forces node n 1 to a low state initially.
- Programmable diode stack 20 a . . . 20 n is connected between node n 1 and Vcc as shown.
- a diode of diode stack 20 a . . . 20 n is an n+ junction in a p-well, assuming an n-substrate n-p-n device of the type shown in FIG. 2 .
- These p-n diodes 20 provide much greater stability over process variations than that which could be afforded by transistors.
- MOSFET connected diodes could be employed in place of the p-n diodes shown. MOSFET connected diodes, however, may be less desirable than p-n diodes because they vary more over process and temperature than do p-n junction diodes which are more tightly controlled over process and temperature variations.
- node n 1 will begin rising once Vcc exceeds the diode forward bias voltage drop.
- the diode forward bias voltage drop of each diode 20 is approximately 0.3 volts.
- the diode stack 20 a . . . 20 n has thirteen (13) diodes, 20 a . . . 20 m, connected in series, node n 1 will start to rise at 3.9 volts. It should be noted that by prudently choosing the number of diodes in the diode stack 20 a . . . 20 n no DC (direct current) is consumed at the normal operating range of 3 6 volts or less.
- Vcc In order to trigger entry of the device into the burn-in stress test mode, supply voltage Vcc must exceed a predetermined voltage level defined as the diode forward bias voltage drop of diode stack 20 a . . . 20 n plus the trip point of Schmitt trigger 31 .
- Vcc must be greater than 5.5 volts to trigger entry into the burn-in stress test mode. At 5.5 volts, node n 2 will go to a low state and node n 3 will go to a high state.
- Schmitt trigger 31 located between nodes n 1 and n 2 , provides hysteresis and noise immunity as voltage supply Vcc slowly ramps up.
- the diode forward biased voltage drop associated with each diode 20 increases at lower temperatures at the rate of approximately ⁇ 2.1 mV per degree Celsius.
- the diode forward biased voltage drop is approximately 0.5 volts; compare this with the 0.3 volt drop at 125 degrees Celsius noted above.
- Schmitt trigger 31 therefore provides immunity against mistakenly entering the burn-in stress test mode under normal operating conditions since, using the example discussed above, Vcc must be 13 times 0.5 volts, or 6.5 volts, before node n 1 starts rising.
- Control bar signal 18 controls the gate of pull-down transistor 28 and pull-up transistor 30 .
- Control bar signal 18 may be a function of a Chip Enable signal or other suitable control signal of the memory device.
- Control bar signal 18 is a low true signal that goes low when in a stress test mode or when the memory device is deselected.
- Control bar signal 18 goes low to disable the DC (direct current) current path through diode stack 20 a . . . 20 n, through transistors 22 , 24 , down through transistor 28 to ground that exists while the device is being stressed at an elevated voltage of 6 volts or more.
- NC signal 16 is an optional signal that may be used to externally inhibit entry into the burn-in stress test mode if desired.
- a No Connect pin which provides NC signal 16 may be any device pin specified as a no-connect in the pinout of the datasheet of the device or any device pin which does not have to be exercised. For instance, an output enable (OE) pin of the device could be readily used in place of the No Connect pin.
- the No Connect pin would recognize the time-out feature of the device, thereby causing the output of NAND gate 46 , Burn-In Mode bar signal 58 , to ignore the output of Schmitt trigger 31 .
- the signal at node n 3 and NC signal 16 are input signals to NAND logic gate 46 .
- Burn-in mode bar signal 58 would be forced high, thereby allowing for the time-out circuit of the device to operate so that operational life (op-life) studies of the device may be conducted. Op-life studies predict how long the device may be expected to last in normal operation.
- Burn-In Mode bar signal 58 indicates when the device has successfully entered the burn-in stress test mode.
- the status of Burn-In Mode bar signal 58 may be monitored either through Burn In Flag 54 or through a Device Pin 48 .
- Burn-In Flag 54 is useful in indicating when the device has entered the burn-in stress test mode since it is not readily apparent when the device has or has not timed out.
- Burn-in flag 54 may be a test pad at wafer level which accommodates testing of the device.
- Device Pin 48 may be an input pin or an output pin of the device.
- a weak leakage transistor 50 is connected to Device Pin 48 ; transistor 50 , as a weak leakage transistor, causes approximately 10 to 100 ⁇ A of pin leakage.
- No Connect pin 16 is a package pin of the IC memory device that similarly may be monitored.
- Burn-in stress test mode circuit 10 of FIG. 1 has ETD (Edge Transition Detection) capabilities as well.
- ETD pulse 14 is a high-going pulse that controls the gate of weak n-channel ETD transistor 26 as shown in FIG. 1 .
- ETD pulse 14 initializes node n 1 on every pulse and is triggered by a change in state of an address pin or control pin of the IC memory device.
- ETD pulse 14 resets the integrated circuit device and thus protects against the device accidentally entering the test mode.
- the ETD capabilities of FIG. 1 can be used in conjunction with different forms of test mode entry besides the burn-in test mode described above.
- the ETD aspect of FIG. 1 can be used for test mode entry that requires that an elevated or “supervoltage” be applied to a pin of the IC memory device.
- ETD pulse 14 controls weak ETD transistor 26 by controlling its gate.
- Diode stack 20 a . . . 20 n is capable of overcoming ETD transistor 26 if the diodes of diode stack 20 a . . . 20 n are conducting, but weak ETD transistor 26 is capable of discharging node n 1 quickly if the diodes of diode stack 20 a . . . 20 n are not conducting.
- node n 1 is reinitialized to guard against Vcc noise spikes that can trigger accidental entry into the test mode.
- ETD pulse 14 controlled weak ETD transistor 26 . If supply voltage Vcc were to spike up to 5.5 volts temporarily, then node n 1 would correspondingly be pulled-up and then be very slowly discharged by very weak transistor 22 . The addition of ETD transistor 26 to the circuitry of FIG. 2 would pull-down node n 1 very quickly in response to a voltage spiking condition of Vcc and therefore avoid triggering false entry into the test mode.
- the ETD transistor 26 compensates for the complicate elevated voltage multiple clocking on a test pin and the numerous registers that would be required to enter into a supervoltage test mode and the various sequences that would be required to exit the supervoltage test mode.
- the diodes of diode stack rather than being capable of overcoming ETD transistor 26 , can be sized so that there are incapable of overcoming ETD transistor 26 .
- ETD transistor 26 would not be a weak transistor, so that every cycle the memory device would be at least temporarily taken out of the test mode for the duration of the test mode in order to prevent false triggering, or entry, of the memory device into the test mode. This occurs regardless of whether the memory device is supposed to be in the test mode. After the ETD pulse, the memory device enters the test mode if it is intended to be in the test mode and if the time-out feature of the memory device has not commenced.
- FIG. 3 another implementation of a stress test mode circuit, according to the present invention, is shown.
- the ETD capability of FIG. 3 again re-initializes node n 1 to guard against Vcc noise spikes that can trigger accidental entry into a test mode.
- the ETD capability of FIG. 3 is capable of being used with any number of different methods of test mode entry in addition to the method described in conjunction with FIGS. 1 and 2 .
- a memory device requiring an elevated or “supervoltage” on a device pin in order to enter a test mode may use the circuitry of FIG. 3 .
- Test mode circuit 60 of FIG. 3 has a number of bipolar transistors 62 a . . . 62 n, ETD transistors 64 a . . . 64 n, transistor 68 , transistor 70 , the Schmitt trigger 31 described above and shown in FIG. 1 , inverters 44 , 52 , NAND logic gate 46 that has three input signals rather than two input signals contrary to FIG. 1 , transistor 50 , output Device Pin 48 , and Test Flag 72 .
- Circuit 60 is provided with ETD pulse 14 , Control bar signal 18 , and No Connect (NC) signal 16 and generates Test Mode bar signal 74 .
- Test Flag 72 indicates when the IC device is in the test mode; alternately, weak transistor 50 is connected to an input or an output Device Pin 48 through which the device may be monitored to determine if it is in the test mode.
- ETD transistors 64 a . . . 64 n could be replaced with static loads wherein ETD pulse 14 could be tied to supply voltage Vcc. Alternately, a transistor could be placed in parallel with each ETD transistor 64 a . . . 64 n, wherein each such transistor being placed in parallel with an ETD transistor 64 has its gate controlled by supply voltage Vcc.
- ETD transistors 64 a . . . 64 n are weak transistors controlled by ETD pulse 14 and operate to ensure that the emitter of each bipolar transistor 62 is Vbe (base-to-emitter voltage) volts lower than its base voltage Vb.
- the ETD transistors 64 a . . . 64 n then, address the case where the bipolar transistors 62 a . . . 62 n are leaky between collector and emitter and operate to pull up the emitter too close to supply voltage Vcc.
- ETD transistors 64 a . . . 64 n Without ETD transistors 64 a . . . 64 n, the only current drain from the emitter of a bipolar transistor 62 is the very small base current of the next bipolar transistor. ETD transistors 64 a . . . 64 n also address Vcc noise concerns.
- Control bar signal 18 that is a function of a Chip Enable signal in FIG. 3 provides a distinct advantage in that it eliminates this type of direct current path when the memory device is deselected (Chip Enable signal low).
- Control bar signal 18 controls the gate of pull-down transistor 68 and pull-up transistor 70 .
- Control bar signal 18 goes low to disable the DC (direct current) current path through bipolar transistors 62 a . . . 62 n, ETD transistors 64 a . . . 64 n, and transistor 68 to ground.
- Control bar signal 18 is also an input signal to gate 46 that goes high during normal operation of the memory device to inhibit entry into the test mode or to cause the test mode to be exited.
- NC signal 16 is an optional signal that may be used to externally inhibit entry into the burn-in stress test mode if desired or to force the memory device to exit the test mode.
- An active low signal of either Control bar signal 18 and NC signal 16 will cause the output of NAND gate 46 , Test Mode bar signal 74 to ignore the output of Schmitt trigger 31 .
- a p-channel transistor could be placed in series with the collectors of bipolar transistors 62 a . . . 62 n to power supply Vcc and transistor 70 would be replaced by an n-channel transistor connected between node n 1 to ground.
- the gates of the p-channel transistor and the n-channel transistor would be controlled by Control bar signal 18 .
- the source of the p-channel transistor would be connected to supply voltage Vcc.
- NAND gate 46 would be a two input gate having only two input signals provided to it: the signal at node n 3 and NC signal 16 .
Abstract
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Priority Applications (1)
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US10/145,606 USRE40282E1 (en) | 1996-12-21 | 2002-05-09 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
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US08/771,643 US6059450A (en) | 1996-12-21 | 1996-12-21 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
US10/145,606 USRE40282E1 (en) | 1996-12-21 | 2002-05-09 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
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US08/771,643 Reissue US6059450A (en) | 1996-12-21 | 1996-12-21 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
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US08/771,643 Ceased US6059450A (en) | 1996-12-21 | 1996-12-21 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
US10/145,606 Expired - Lifetime USRE40282E1 (en) | 1996-12-21 | 2002-05-09 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
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US08/771,643 Ceased US6059450A (en) | 1996-12-21 | 1996-12-21 | Edge transition detection circuitry for use with test mode operation of an integrated circuit memory device |
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US20030212939A1 (en) * | 2002-05-09 | 2003-11-13 | Baker Ronald N. | Method and apparatus for selecting the operational mode of an integrated circuit |
JP2007256264A (en) * | 2006-02-21 | 2007-10-04 | Mitsumi Electric Co Ltd | Semiconductor device |
KR100798804B1 (en) * | 2006-06-29 | 2008-01-29 | 주식회사 하이닉스반도체 | Semiconductor memory device |
WO2014138035A1 (en) | 2013-03-04 | 2014-09-12 | Echogen Power Systems, L.L.C. | Heat engine systems with high net power supercritical carbon dioxide circuits |
US10883388B2 (en) | 2018-06-27 | 2021-01-05 | Echogen Power Systems Llc | Systems and methods for generating electricity via a pumped thermal energy storage system |
US11435120B2 (en) | 2020-05-05 | 2022-09-06 | Echogen Power Systems (Delaware), Inc. | Split expansion heat pump cycle |
AU2021397292A1 (en) | 2020-12-09 | 2023-07-06 | Supercritical Storage Company, Inc. | Three reservoir electric thermal energy storage system |
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US5712575A (en) * | 1995-12-18 | 1998-01-27 | Micron Technology, Inc. | Super-voltage circuit with a fast reset |
US5732034A (en) * | 1996-05-29 | 1998-03-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having an address key circuit for reducing power consumption |
US6294939B1 (en) * | 1998-10-30 | 2001-09-25 | Stmicroelectronics, Inc. | Device and method for data input buffering |
US6160428A (en) * | 1998-12-10 | 2000-12-12 | National Semiconductor Corporation | Universal on-chip initialization circuit |
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