USRE40490E1 - Method and apparatus for programmable field emission display - Google Patents
Method and apparatus for programmable field emission display Download PDFInfo
- Publication number
- USRE40490E1 USRE40490E1 US10/706,486 US70648603A USRE40490E US RE40490 E1 USRE40490 E1 US RE40490E1 US 70648603 A US70648603 A US 70648603A US RE40490 E USRE40490 E US RE40490E
- Authority
- US
- United States
- Prior art keywords
- cathodoluminescent
- accordance
- transistor
- emitter
- field emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/02—Viewing or reading apparatus
- G02B27/022—Viewing apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J31/00—Cathode ray tubes; Electron beam tubes
- H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
- H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
- H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
- H01J31/123—Flat display tubes
- H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
- H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
Abstract
Description
Claims (63)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/706,486 USRE40490E1 (en) | 1999-09-02 | 2003-11-12 | Method and apparatus for programmable field emission display |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/388,671 US6366266B1 (en) | 1999-09-02 | 1999-09-02 | Method and apparatus for programmable field emission display |
US10/706,486 USRE40490E1 (en) | 1999-09-02 | 2003-11-12 | Method and apparatus for programmable field emission display |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/388,671 Reissue US6366266B1 (en) | 1999-09-02 | 1999-09-02 | Method and apparatus for programmable field emission display |
Publications (1)
Publication Number | Publication Date |
---|---|
USRE40490E1 true USRE40490E1 (en) | 2008-09-09 |
Family
ID=23535036
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/388,671 Ceased US6366266B1 (en) | 1999-09-02 | 1999-09-02 | Method and apparatus for programmable field emission display |
US10/706,486 Expired - Lifetime USRE40490E1 (en) | 1999-09-02 | 2003-11-12 | Method and apparatus for programmable field emission display |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US09/388,671 Ceased US6366266B1 (en) | 1999-09-02 | 1999-09-02 | Method and apparatus for programmable field emission display |
Country Status (1)
Country | Link |
---|---|
US (2) | US6366266B1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070257865A1 (en) * | 2006-05-03 | 2007-11-08 | Chan-Wook Bajk | Method of driving field emission device (FED) and method of aging FED using the same |
US20100077516A1 (en) * | 2008-09-22 | 2010-03-25 | International Business Machines Corporation | Platinum silicide tip apices for probe-based technologies |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6366266B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | Method and apparatus for programmable field emission display |
US6882330B2 (en) * | 2001-03-26 | 2005-04-19 | Lg Electronics Inc. | Field emission displaying device and driving method thereof |
US20090184638A1 (en) * | 2008-01-22 | 2009-07-23 | Micron Technology, Inc. | Field emitter image sensor devices, systems, and methods |
Citations (39)
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---|---|---|---|---|
US3775200A (en) | 1970-08-29 | 1973-11-27 | Philips Corp | Schottky contact devices and method of manufacture |
US3958143A (en) | 1973-01-15 | 1976-05-18 | Varian Associates | Long-wavelength photoemission cathode |
US3968272A (en) | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
US4069492A (en) | 1976-08-23 | 1978-01-17 | Rca Corporation | Electroluminescent semiconductor device having a body of amorphous silicon |
US4513308A (en) | 1982-09-23 | 1985-04-23 | The United States Of America As Represented By The Secretary Of The Navy | p-n Junction controlled field emitter array cathode |
US4544939A (en) | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
US4704544A (en) | 1986-04-22 | 1987-11-03 | Unisearch Limited | Complementary current mirror logic |
US5039886A (en) | 1989-05-26 | 1991-08-13 | Nec Corporation | Current mirror type level converters |
US5047821A (en) | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
JPH0536280A (en) | 1991-08-01 | 1993-02-12 | Seiko Epson Corp | Semiconductor integrated device |
US5229331A (en) | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
US5323053A (en) | 1992-05-28 | 1994-06-21 | At&T Bell Laboratories | Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates |
US5459480A (en) | 1992-04-07 | 1995-10-17 | Micron Display Technology, Inc. | Architecture for isolating display grid sections in a field emission display |
US5469014A (en) | 1991-02-08 | 1995-11-21 | Futaba Denshi Kogyo Kk | Field emission element |
US5471072A (en) | 1988-10-25 | 1995-11-28 | The United States Of America As Represented By The Secretary Of The Navy | Platinum and platinum silicide contacts on β-silicon carbide |
US5554859A (en) | 1989-09-04 | 1996-09-10 | Canon Kabushiki Kaisha | Electron emission element with schottky junction |
US5598016A (en) | 1993-12-27 | 1997-01-28 | Nec Corporation | Back-illuminated type photoelectric conversion device |
US5760417A (en) | 1991-09-13 | 1998-06-02 | Canon Kabushiki Kaisha | Semiconductor electron emission device |
US5772488A (en) | 1995-10-16 | 1998-06-30 | Micron Display Technology, Inc. | Method of forming a doped field emitter array |
US5780318A (en) | 1995-08-25 | 1998-07-14 | Kobe Steel, Ltd. | Cold electron emitting device and method of manufacturing same |
US5796155A (en) | 1995-07-14 | 1998-08-18 | The United States Of America As Represented By The Secretary Of The Air Force | Schottky barrier infrared detector array with increased effective fill factor |
US5814832A (en) | 1989-09-07 | 1998-09-29 | Canon Kabushiki Kaisha | Electron emitting semiconductor device |
US5894293A (en) | 1996-04-24 | 1999-04-13 | Micron Display Technology Inc. | Field emission display having pulsed capacitance current control |
US5909200A (en) | 1996-10-04 | 1999-06-01 | Micron Technology, Inc. | Temperature compensated matrix addressable display |
US5910701A (en) * | 1997-02-10 | 1999-06-08 | Nec Corporation | Field-emission cold cathode and manufacturing method for same |
US5920296A (en) | 1995-02-01 | 1999-07-06 | Pixel International | Flat screen having individually dipole-protected microdots |
US5945968A (en) | 1997-01-07 | 1999-08-31 | Micron Technology, Inc. | Matrix addressable display having pulsed current control |
US5981303A (en) | 1994-09-16 | 1999-11-09 | Micron Technology, Inc. | Method of making field emitters with porous silicon |
US6009015A (en) | 1998-05-08 | 1999-12-28 | Sony Corporation | Program-verify circuit and program-verify method |
US6020595A (en) | 1997-03-11 | 2000-02-01 | Director-General Of Agency Of Industrial Science And Technology | Cold electron emission device |
US6022256A (en) | 1996-11-06 | 2000-02-08 | Micron Display Technology, Inc. | Field emission display and method of making same |
US6031250A (en) | 1995-12-20 | 2000-02-29 | Advanced Technology Materials, Inc. | Integrated circuit devices and methods employing amorphous silicon carbide resistor materials |
US6034480A (en) | 1993-07-08 | 2000-03-07 | Micron Technology, Inc. | Identifying and disabling shorted electrodes in field emission display |
US6097359A (en) | 1995-11-30 | 2000-08-01 | Orion Electric Co., Ltd. | Cell driving device for use in a field emission display |
US6163107A (en) | 1997-03-11 | 2000-12-19 | Futaba Denshi Kogyo K.K. | Field emission cathode |
US6181308B1 (en) * | 1995-10-16 | 2001-01-30 | Micron Technology, Inc. | Light-insensitive resistor for current-limiting of field emission displays |
US6366266B1 (en) | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | Method and apparatus for programmable field emission display |
US6441542B1 (en) | 1999-07-21 | 2002-08-27 | Micron Technology, Inc. | Cathode emitter devices, field emission display devices, and methods of detecting infrared light |
-
1999
- 1999-09-02 US US09/388,671 patent/US6366266B1/en not_active Ceased
-
2003
- 2003-11-12 US US10/706,486 patent/USRE40490E1/en not_active Expired - Lifetime
Patent Citations (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3775200A (en) | 1970-08-29 | 1973-11-27 | Philips Corp | Schottky contact devices and method of manufacture |
US3958143A (en) | 1973-01-15 | 1976-05-18 | Varian Associates | Long-wavelength photoemission cathode |
US3968272A (en) | 1974-01-25 | 1976-07-06 | Microwave Associates, Inc. | Zero-bias Schottky barrier detector diodes |
US4069492A (en) | 1976-08-23 | 1978-01-17 | Rca Corporation | Electroluminescent semiconductor device having a body of amorphous silicon |
US4544939A (en) | 1981-08-25 | 1985-10-01 | Rca Corporation | Schottky-barrier diode radiant energy detector with extended longer wavelength response |
US4513308A (en) | 1982-09-23 | 1985-04-23 | The United States Of America As Represented By The Secretary Of The Navy | p-n Junction controlled field emitter array cathode |
US4704544A (en) | 1986-04-22 | 1987-11-03 | Unisearch Limited | Complementary current mirror logic |
US5471072A (en) | 1988-10-25 | 1995-11-28 | The United States Of America As Represented By The Secretary Of The Navy | Platinum and platinum silicide contacts on β-silicon carbide |
US5039886A (en) | 1989-05-26 | 1991-08-13 | Nec Corporation | Current mirror type level converters |
US5554859A (en) | 1989-09-04 | 1996-09-10 | Canon Kabushiki Kaisha | Electron emission element with schottky junction |
US5814832A (en) | 1989-09-07 | 1998-09-29 | Canon Kabushiki Kaisha | Electron emitting semiconductor device |
US5047821A (en) | 1990-03-15 | 1991-09-10 | Intevac, Inc. | Transferred electron III-V semiconductor photocathode |
US5469014A (en) | 1991-02-08 | 1995-11-21 | Futaba Denshi Kogyo Kk | Field emission element |
US5270554A (en) | 1991-06-14 | 1993-12-14 | Cree Research, Inc. | High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide |
JPH0536280A (en) | 1991-08-01 | 1993-02-12 | Seiko Epson Corp | Semiconductor integrated device |
US5760417A (en) | 1991-09-13 | 1998-06-02 | Canon Kabushiki Kaisha | Semiconductor electron emission device |
US5372973A (en) | 1992-02-14 | 1994-12-13 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
US5229331A (en) | 1992-02-14 | 1993-07-20 | Micron Technology, Inc. | Method to form self-aligned gate structures around cold cathode emitter tips using chemical mechanical polishing technology |
US5459480A (en) | 1992-04-07 | 1995-10-17 | Micron Display Technology, Inc. | Architecture for isolating display grid sections in a field emission display |
US5323053A (en) | 1992-05-28 | 1994-06-21 | At&T Bell Laboratories | Semiconductor devices using epitaxial silicides on (111) surfaces etched in (100) silicon substrates |
US6034480A (en) | 1993-07-08 | 2000-03-07 | Micron Technology, Inc. | Identifying and disabling shorted electrodes in field emission display |
US5598016A (en) | 1993-12-27 | 1997-01-28 | Nec Corporation | Back-illuminated type photoelectric conversion device |
US5981303A (en) | 1994-09-16 | 1999-11-09 | Micron Technology, Inc. | Method of making field emitters with porous silicon |
US5920296A (en) | 1995-02-01 | 1999-07-06 | Pixel International | Flat screen having individually dipole-protected microdots |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20070257865A1 (en) * | 2006-05-03 | 2007-11-08 | Chan-Wook Bajk | Method of driving field emission device (FED) and method of aging FED using the same |
US7973742B2 (en) * | 2006-05-03 | 2011-07-05 | Samsung Electronics Co., Ltd. | Method of driving field emission device (FED) and method of aging FED using the same |
US20100077516A1 (en) * | 2008-09-22 | 2010-03-25 | International Business Machines Corporation | Platinum silicide tip apices for probe-based technologies |
US8332961B2 (en) * | 2008-09-22 | 2012-12-11 | International Business Machines Corporation | Platinum silicide tip apices for probe-based technologies |
Also Published As
Publication number | Publication date |
---|---|
US6366266B1 (en) | 2002-04-02 |
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