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Numéro de publicationUSRE42193 E1
Type de publicationOctroi
Numéro de demandeUS 12/435,441
Date de publication1 mars 2011
Date de dépôt5 mai 2009
Date de priorité10 mai 1999
Autre référence de publicationEP1052691A2, EP1052691A3, US6335208, US7166186, US7316936, US20020025600, US20070111337, USRE43980
Numéro de publication12435441, 435441, US RE42193 E1, US RE42193E1, US-E1-RE42193, USRE42193 E1, USRE42193E1
InventeursRobert K. Lowry
Cessionnaire d'origineIntersil Corporation
Exporter la citationBiBTeX, EndNote, RefMan
Liens externes: USPTO, Cession USPTO, Espacenet
Laser decapsulation method
US RE42193 E1
Résumé
A decapsulation apparatus 100 has a laser 8 that removes plastic encapsulant from a device 24. Chamber 20 is sealed. Exhaust port 9 removes debris and fumes. The device 24 is positioned and scanned using an X, Y table 2. A hinged end 4 rotates the device to an acute angle of incidence with respect to a laser 8. Endpoint detector 10 senses the exposed integrated circuit and moves or shuts down the laser 8.
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Revendications(28)
1. A method of manufacturing integrated circuits, the method comprising;
forming encapsulated integrated circuits; and
sampling select integrated circuits to verify if the finished integrated circuits are made to manufacturing specifications by selectively removing portions of the encapsulation with a laser that is suitable for breaking cross linked bonds of the encapsulant without damaging the integrated circuits, wherein a thin layer of encapsulant is left on at least one portion of at least one of the sampled integrated circuits.
2. The method of claim 1, wherein selectively removing portions of the encapsulant of the select sampled integrated circuits further comprises:
monitoring amplitude and frequency of the laser light reflected of each selected integrated circuit; and
when a change in at least one of the amplitude and frequency is detected, moving each selected integrated circuit.
3. The method of claim 2, wherein moving each selected integrated circuit further comprises:
advancing a stage upon which the select integrated circuit is mounted on.
4. The method of claim 1, wherein selectively removing portions of the encapsulant of the select sampled integrated circuits with a laser further comprises:
using a laser with wavelengths in the infrared range that includes at least one range of 725-900 cm-1, 1150-1300 cm-1, 1400-1500 cm-1 and 1600-1750 cm-1.
5. The method of claim 1, wherein selectively removing portions of the encapsulation of the select sampled integrated circuits with a laser further comprises:
using at least one of a YAG laser and an infrared laser.
6. The method of claim 1, wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:
changing an angle of incident of the laser by rotating a stage upon which the integrated circuits are mounted.
7. The method of claim 1, further comprising:
testing the thin layer of encapsulant for contaminates.
8. The method of claim 1, wherein selectively removing portions of the encapsulation of the select sampled integrated circuits further comprises:
removing debris caused by the removal of select portions of encapsulate by at least one of using a flow of gas to direct the debris away from the integrated circuits and capturing the debris in a dust bin.
9. A method of manufacturing integrated circuits, the method comprising:
forming integrated circuits with a manufacturing process, wherein each integrated circuit is encapsulated to protect the integrated circuit from environmental factors;
selecting certain formed integrated circuits;
placing each selected integrated circuit on a stage in an enclosure;
directing a laser beam having a select wavelength on a select portion of the encapsulant to remove the select portion of encapsulant, wherein with at least one of the select integrated circuits the select removed portion of encapsulant has a depth, the depth being less than a thickness of the encapsulant;
monitoring the laser beam reflected off of the integrated circuit;
moving the stage based at least in part on the monitored reflected laser beam;
terminating the laser beam based at least in part on the monitored reflect laser beam; and
testing the selected integrated circuits with the select portion of encapsulant removed to verify that the integrated circuits are formed to manufacture specifications.
10. The method of claim 9, further comprising:
exhausting debris from the enclosure.
11. The method of claim 10, wherein exhausting debris from the stage further comprises:
directing a flow of gas to disperse the debris away from the integrated circuit.
12. The method of claim 9, further comprising:
catching debris particles in a dust bin.
13. The method of claim 9, further comprising:
testing for contaminates in a thin layer of encapsulant left on the at least one select integrated circuit having the select removed portion with a depth less than the depth of the encapsulant.
14. A manufacturing method of removing encapsulant from an integrated circuit; the method comprising:
placing an integrated circuit on a stage in an enclosure;
directing a laser beam on the encapsulation of the integrated circuit, wherein the laser beam has a wavelength that is suitable for breaking cross linked bonds of the encapsulant without damaging the underlying integrated circuit;
removing at least one select portion of the encapsulant with the laser beam; and
capturing debris particles in a dust bin.
15. The method of claim 14, further comprising:
monitoring the laser beam reflected off of the integrated circuit; and
based at least in part on the monitored laser beam, doing at least one of moving the stage and terminating the laser beam.
16. The method of claim 14, further comprising:
after the removing the at least one select portion of the encapsulant, verifying the integrated circuit is made to manufacturing specifications.
17. The method of claim 14, further comprising:
directing a flow of gas to move the debris away from the integrated circuit.
18. The method of claim 14, further comprising:
leaving a thin layer of encapsulant at the at least one select portion, and
testing for contaminates in the thin layer of encapsulant.
19. A method of removing encapsulant from a encapsulated device, the method comprising:
placing an encapsulated device on a stage in an enclosure;
directing a laser beam on the encapsulation of the encapsulated device;
removing at least one select portion of the encapsulant with the laser beam; and
leaving a thin layer of encapsulant on the encapsulated device at the at least one select portion.
20. The method of claim 19, and further including capturing debris particles in a dust bin.
21. The method of claim 19, and further including:
rotating the stage until the encapsulated device is in a substantially vertical position in the enclosure.
22. The method of claim 19, and further comprising:
testing for contaminants in the thin layer of encapsulant.
23. The method of claim 19, wherein directing a laser beam further comprises:
directing a laser beam with wavelengths in the infrared range that includes at least one range of 725 - 900 cm- 1, 1150 - 1300 cm- 1, 1400 - 1500 cm- 1 and 1600 - 1750 cm- 1.
24. The method of claim 19, wherein directing a laser beam further comprises:
using at least one of a YAG laser and an infrared laser.
25. The method of claim 19, wherein removing at least one select portion of the encapsulant with the laser beam further comprises:
changing an angle of incidence of the laser by rotating a stage upon which the encapsulated devices are mounted.
26. The method of claim 19 wherein directing a laser beam comprises directing a laser beam with a wavelength that is suitable for breaking cross linked bonds of the encapsulant without damaging the underlying encapsulated device.
27. A method of manufacturing encapsulated devices, the method comprising:
forming encapsulated devices with a manufacturing process, wherein each encapsulated device is encapsulated to protect the encapsulated device from environmental factors;
selecting certain formed encapsulated devices;
placing each selected encapsulated device on a stage in an enclosure;
directing a laser beam having a select wavelength on a select portion of the encapsulant to remove the select portion of encapsulant;
catching debris particles in a dust bin; and
testing the selected encapsulated devices with the select portion of encapsulant removed to verify that the encapsulated devices are formed to manufacture specifications.
28. The method of claim 27, and further comprising:
monitoring the laser beam reflected off of the encapsulated device;
moving the stage based at least in part on the monitored reflected laser beam; and
terminating the impingement of the laser beam based at least in part on the monitored reflected laser beam.
Description
CROSS-REFERENCE TO RELATED APPLICATIONS

This Application is a continuation application of U.S. patent application Ser. No. 09/949,736, filed Sep. 10, 2001, now U.S. Pat. No. 7,166,186; which is a divisional application of U.S. patent application Ser. No. 09/307,896, filed May 10, 1999, now U.S. Pat. No. 6,335,208.

BACKGROUND

This invention relates generally to an apparatus and method for removing plastic compounds that encapsulate integrated circuits and particularly, to a laser-equipped apparatus and method for decapsulating plastic encapsulated integrated circuits.

The vast majority of integrated circuits are packaged in plastic resins including but not limited to biphenyl, orthocresol novolac, and dicyclopentadienyl types. The plastic package seals the enclosed integrated circuit from the external environment, including moisture and dust. The resin contains fillers such as silica or other insulating materials to enhance the physical and mechanical properties of the package. The integrated circuits are encapsulated using a transfer molding process. During that process a solid charge of resin is melted and then forced under pressure into a multi cavity mold that contains a number of integrated circuits. One mold may contain tens or hundreds of integrated circuits. The size of the molded integrated circuits varies in length, width and height. As the resins cool, their molecules cross-link into a solid resin. Some devices using the standard dual-in-line package are several millimeters thick. Other small outline packages are a millimeter in thickness.

There are a number of reasons for removing the plastic encapsulant from finished Integrated circuits. One reason is to monitor the manufacturing process. In most mass manufacturing processes, samples of finished product are often taken and analyzed to check whether or not the finished product is made to the manufacturing specifications. When one or more devices fail, it is desirable to analyze those failed devices to detect process flaws so that the flaws can be corrected. Some devices are also reverse engineered in order to discover how the device is constructed.

Current techniques for removing the plastic are time consuming and environmentally unfriendly. One acid etching technique uses fuming nitric or sulfuric acid. That technique can take several hours or more to remove the plastic, and the spent chemicals must be properly disposed of. In addition, these harsh chemicals come in contact with the surface of the integrated chip being exposed, which may chemically remove foreign substances or contaminants residing between the top of the die and the mold compound which will subsequently not be detected in failure analysis. Plasma etching may be used but it is slow and also leaves undesired residues. As such, there is a long felt and unfulfilled need for a faster process that is environmentally friendly and less disruptive to the top surface of the integrated circuit chip.

SUMMARY

The invention eliminates hazardous acid waste and provides a faster decapsulation process which is less disruptive to the top-of-die surface. The invention provides an apparatus and method for removing plastic encapsulant using a tunable laser. A chamber has a stage for holding the integrated circuit during decapsulation. The stage is an X,Y table that comprises rods so that encapsulant debris may fall between the rods. Below the stage is a dust bin for collecting the debris. A hinge on the table lets the operator adjust the angle of incidence of the laser beam on the surface of the device under test.

A laser outside the chamber shines its beam through a window or other suitable optical opening onto the surface of the device under test. The laser beam is tunable in frequency and intensity to suitable settings for removing the encapsulant. The laser beam is generated by a YAG or infrared laser or any other laser suitable for breaking the cross linked bonds of the encapsulant without damaging the integrated circuit.

The decapsulation process is controlled by a computer that includes a microprocessor or digital signal processor, suitable memory, an application program for operating the apparatus and suitable sensors. One sensor is an endpoint detector. It is focused on the integrated circuit to detect reflected light. Where the plastic is removed, the beam strikes the integrated circuit and the amplitude and frequency of the reflected light changes. The endpoint detector senses those changes. In response to a signal indicating that the integrated circuit is exposed, the computer shuts down the laser beam or moves the laser beam to a new location.

The apparatus has a sealed chamber. Fumes generated by decapsulation are exhausted through a suitable fan or blower-operated exhaust port. A cleaning gas such as nitrogen or compressed air is directed at the surface of the integrated circuit to remove dust and debris. The removed dust and debris are either exhausted or fall into the dust bin.

DRAWINGS

FIG. 1 is a sectional elevation view of the invention showing the integrated circuit oriented at a near normal angle to the laser beam.

FIG. 2 is a further view showing the integrated circuit oriented at an acute angle of incidence to the laser beam.

DETAILED DESCRIPTION

Turning to FIG. 1, there is shown a decapsulation apparatus 100 that comprises a chamber wall 12 that encloses and seals a chamber 20. The chamber 20 has a clean gas inlet 11 with a conduit 22 that directs a stream of clean gas, such as nitrogen or compressed air at a device under test (DUT), i.e., integrated circuit 24. Chamber 20 also has an exhaust port 9 for removing fumes and dust particles from the chamber. Within the chamber is a stage 2 that is disposed over a dust bin 3. The dust bin 3 catches dust and debris that are generated by the laser striking the plastic resin on the DUT 24.

A laser 8 is mounted on the outside wall 12 of the chamber 20. The laser directs a laser beam 26 toward the DUT 24. The laser 8 is any suitable laser, such as a YAG or an infrared laser. The laser 8 has its frequency and its intensity (power) tunable for removing plastic encapsulant from the DUT 24 without causing damage to the encapsulated integrated circuit. The laser beam 26 passes through an optical opening or window (not shown) in the wall 12 of the chamber 20. The interior of the chamber 20 is illuminated by a suitable light 7. Operation of the laser on the DUT 24 is observed through a microscope 5. This is also mounted on wall 12. The microscope 5 has a shutter 6 that may be manually or automatically operated as hereinafter described. Light reflected from the surface of the DUT 24 is detected by endpoint detector 10. The endpoint detector 10 senses the amplitude or frequency or both of the reflected light. The endpoint detector is any suitable photosensitive device that responds to changes in sensed frequency or intensity.

The stage 2 is an X,Y positioning table. It is desirable that the stage be made of rods or a perforated table so that dust and debris removed from the DUT 24 falls through the stage and the stage mount into the dust bin 3. Such X,Y positioning tables are well known in the art. They maybe operated using piezoelectric operators, linear magnetic motors, or lead screws. As shown in FIG. 1, the DUT 24 is disposed at substantially a normal angle to the laser beam 26. The stage is hinged at one end 4 so that the DUT 24 may be rotated to a substantially vertical position as shown in FIG. 2. In its vertical position, the laser beam 26 has an acute angle of incidence with the surface of the DUT 24. That particular position is useful when it is desired to leave a thin layer of encapsulant on the surface of the integrated circuit. Leaving such a thin layer is often desired during failure analysis to detect contaminants on the surface of the encapsulated DUT 24.

The apparatus 100 may be manually operated or automatically operated or may be semiautomatically operated. For automatic and semiautomatic operation, the apparatus 100 is provided with a controller 50. The controller 50 includes a CPU 51 which may be a microprocessor or a digital signal processor. The CPU 51 communicates with a random access memory 53 and a read-only memory 54. Suitable operating software and application software are stored in the RAM 53 or ROM 54. The CPU 51 controls operations of the various components of the apparatus 100 via the control bus 30 and the control lines 31-37 that are respectively connected to the microscope shutter 6, laser 8, stage 2, clean gas inlet 11, endpoint detector 10, exhaust port 9, and joy stick 40. By manual, automatic or semiautomatic operation, the operator may selectively operate any one of the controlled components, move the stage to its desired X, Y position, and rotate the top platform of the stage to its desired Z axis orientation.

The following wavelengths in the infrared range are especially applicable: 725-900 cm-1, 1150-1300 cm-1, 1400-1500 cm-1 and 1600-1750 cm-1. These wavelength ranges were determined from IR chemical analysis of the mold compound resins. See “Identifying Plastic Encapsulant Materials by Pyrolysis Infrared Spectrophotometry”, R. K. Lowry, K. L. Hanley, Proceedings, 1998 Intl Symposium for Testing and Failure Analysis, November, 1998, pp. 399-401. It is these wavelength ranges in particular where there is significant absorption of IR energy at the molecular level by plastic resins. An incident beam tuned for maximized power in these energy ranges begins to promote molecular rearrangement and ultimately decompositional breakdown of polymerized resin molecules. Any tuned laser operating in these ranges promotes breakdown not just by thermal heating the material (which almost any incident laser energy with enough power could provide) but also by chemical decomposition. This promotes breakdown in a “material-specific” way, so that excessive heating via straightforward but less-controllable thermal decomposition can be avoided.

In operation, a DUT 24 is placed or otherwise mounted on the top of the stage 2. While the embodiment shown in FIG. 1 includes only a single device, those skilled in the art will appreciate that multiple devices may be mounted on the stage. Either manually or with the assistance of controller 50, the stage 2 is positioned in an X,Y plane relative to the laser beam 26, of laser 8. Laser 8 is under control of the controller 50. Laser 8 may be any suitable laser that has its amplitude and frequency tuned and controlled by controller 50. Such suitable lasers include YAG lasers, as well as infrared lasers. It is desired to use a laser with a suitable power and frequency for breaking the cross-linked polymeric bonds of the plastic resin that encapsulates the DUT 24. The laser may be operated at a relatively low level to provide a target beam that strikes the stage and the DUT 24. The operator may then position the stage by using a joy stick device 40 and the microscope 5. In the preferred embodiment, the stage is moved to initially place the laser on one of the corners of the DUT 24. Once the starting point for the laser has been selected, then the stage moves in a raster pattern along a first axis, steps transverse to the first axis at least the width of the beam, and then reverses direction and travels back along the first axis. In this manner, the beam 26 raster-scans across the DUT 24. Of course, if desired, the laser beam 26 may be raster-scanned using optical methods, including prisms and/or mirrors that are selectively moved to sweep the beam across the surface of the DUT 24.

When the beam 26 is operated at its effective frequency and intensity, the plastic encapsulant is removed from the DUT 24. The removal process creates a cloud of debris and fumes. The fumes and some lighter debris particles are withdrawn from the chamber 20 via the exhaust port 9. The heavier debris particles fall through the rods or holes in the stage 2 and are captured in the dust bin 3. Some of the dust may settle onto the DUT 24. Clean gas 22 drives the dust away from the DUT 24. The clean gas 22 includes any suitable gas, such as nitrogen or air for dispersing the dust particles away from the surface of the DUT 24. Such dispersal permits the operator to view the DUT in process and removes particles from the immediate path of the laser so that the encapsulant is more effectively removed.

Decapsulation may be carried out automatically. During automatic decapsulation, the laser is operated until the endpoint detector 10 detects a change in the amplitude and/or frequency of light reflected from the DUT 24. When the integrated circuit is uncovered, the reflected light changes its frequency. The intensity of reflected light may also change. The DUT detects these changes and provides a signal via signal and control line 35 to the controller 50.

Controller 50 receives and sends signals on control and sensor bus 30 via an A-to-D and D-to-A converter 52. The control and sensing signals are analog signals. Thus, it is necessary to convert the analog signals to digital signals so that they can be understood by the CPU 51. If the CPU 51 is a DSP, the DSP has a built-in A-to-D and D-to-A converter.

Controller 50 receives the signal from the endpoint detector 10. When the endpoint detector 10 signals that the integrated circuit is uncovered, the controller 50 advances the stage to the next position to continue removing encapsulant. As such, for a given beam width, the laser is focused on the DUT 24 until the underlying integrated circuit is exposed. Upon detection of the exposed integrated circuit, the stage is moved in a continuous or stepwise pattern to subsequent positions.

As indicated above, it is also possible to manually operate the apparatus or to semi-automatically operate the apparatus. For example, it is often desired to provide one or more pinholes down to the surface of the integrated circuit. Those holes can be provided by selectively removing encapsulant using the laser and the endpoint detector.

Having thus described the preferred embodiment of the invention, those skilled in the art will appreciate that further changes, modifications, additions and omissions may be made to that embodiment without departing from the spirit and scope of the appended claims.

Citations de brevets
Brevet cité Date de dépôt Date de publication Déposant Titre
US405260323 déc. 19744 oct. 1977International Business Machines CorporationObject positioning process and apparatus
US504940611 juil. 198917 sept. 1991U.S. Philips CorporationMethod of manufacturing solid bodies
US518223025 juil. 198826 janv. 1993International Business Machines CorporationLaser methods for circuit repair on integrated circuits and substrates
US52548328 janv. 199119 oct. 1993U.S. Philips CorporationMethod of manufacturing ultrafine particles and their application
US528179824 déc. 199125 janv. 1994Maxwell Laboratories, Inc.Method and system for selective removal of material coating from a substrate using a flashlamp
US542393119 août 199313 juin 1995Hitachi, Ltd.Method and apparatus for removing an electronic component from a board
US542425426 août 199413 juin 1995International Business Machines CorporationProcess for recovering bare semiconductor chips from plastic packaged modules by thermal shock
US564347219 sept. 19941 juil. 1997Cauldron Limited PartnershipSelective removal of material by irradiation
US57006976 juin 199523 déc. 1997Silicon Packaging TechnologyMethod for packaging an integrated circuit using a reconstructed package
US572591426 sept. 199510 mars 1998Deutsche Forschungsanstalt fuer Luft - und Raumfahrt e.V.Process and apparatus for producing a functional structure of a semiconductor component
US573646425 mai 19957 avr. 1998Deutsche Forschungsanstalt Fuer Luft-Und Raumfahrt E.V.Process and apparatus for producing a functional structure of a semiconductor component
US581724330 oct. 19966 oct. 1998Shaffer; Wayne K.Method for applying decorative contrast designs to automotive and motorcycle parts using lasers
US58245695 mars 199620 oct. 1998Micron Technology, Inc.Semiconductor device having ball-bonded pads
US59522717 mars 199714 sept. 1999Sumitomo Electric Industries, Ltd.Irradiating a laser beam to vaporize or sublime to deposit target material; moving substrate perpendicular to second laser beam and removing a portion of deposited material with second beam; making cables, electrodes without etching
US59618601 juin 19955 oct. 1999National University Of SingaporePulse laser induced removal of mold flash on integrated circuit packages
US598623428 mars 199716 nov. 1999The Regents Of The University Of CaliforniaHigh removal rate laser-based coating removal system
US604310019 avr. 199628 mars 2000Weaver; KevinChip on tape die reframe process
US604858816 mars 199811 avr. 2000Cauldron Limited PartnershipFlow of inert gas over substrate surface while irradiating the undesired material with energetic photons.
US610760030 juin 199822 août 2000Mitsubishi Denki Kabushiki KaishaLaser machining apparatus
US614060418 juin 199831 oct. 2000General Electric CompanyLaser drilling breakthrough detector
US632927214 juin 199911 déc. 2001Technologies Ltrim Inc.Method and apparatus for iteratively, selectively tuning the impedance of integrated semiconductor devices using a focussed heating source
US633520810 mai 19991 janv. 2002Intersil Americas Inc.Laser decapsulation method
US64143202 mai 20002 juil. 2002The Regents Of The University Of CaliforniaComposition analysis by scanning femtosecond laser ultraprobing (CASFLU).
US67529661 sept. 200022 juin 2004Caliper Life Sciences, Inc.Microfabrication methods and devices
US716618610 sept. 200123 janv. 2007Intersil Americas Inc.Laser decapsulation apparatus and method
US727101214 juil. 200418 sept. 2007Control Systemation, Inc.Failure analysis methods and systems
US731693627 déc. 20068 janv. 2008Intersil Americans Inc.Laser decapsulation method
US2001002825328 févr. 200111 oct. 2001Maximilian ZellnerSensor array for a capacitance measuring fingerprint sensor, and method for producing such a sensor array
US2001002839012 juin 200111 oct. 2001Sumitomo Heavy Industries, Ltd., A Japanese CorporationMethod for making marks in a transparent material by using a laser
US2002003004030 août 200114 mars 2002Farnworth Warren M.Laser marking techniques for bare semiconductor die
US2002010760315 nov. 19998 août 2002Robert L. CanellaMethod of efficiently laser marking singulated semiconductor devices
US2003001076110 juil. 200216 janv. 2003Hong Ming HuiMethod and apparatus for decapping integrated circuit packages
US2003017839622 mars 200225 sept. 2003Andrei NaumovAutomated trim processing system
US200302223307 févr. 20034 déc. 2003Yunlong SunPassivation processing over a memory link
US2004025354528 avr. 200416 déc. 2004Caliper Life Sciences, Inc.Microfabrication methods and devices
US2006008495712 sept. 200520 avr. 2006Peter DelfyettLaser ablation method and apparatus having a feedback loop and control unit
US200601696773 févr. 20053 août 2006Laserfacturing Inc.Method and apparatus for via drilling and selective material removal using an ultrafast pulse laser
US2007001266512 juil. 200518 janv. 2007Hewlett-Packard Development Company LpLaser ablation
US200700750632 oct. 20065 avr. 2007Aradigm CorporationMethod and system for LASER machining
FR2731637A1 Titre non disponible
GB2177965A Titre non disponible
JPS6332957A * Titre non disponible
WO1986007492A113 mai 198618 déc. 1986American Telephone & TelegraphLead frame deflashing
WO2001015191A225 août 20001 mars 2001Benoit CourrierDevice for detection and analysis by ablation and transfer to an ion trap of a spectrometer and corresponding method
Citations hors brevets
Référence
1Carter, George, "Laser Decapsulation of Transfer Molded Plastic Packages for Failure Analysis", "Proceedings from the 28th International Symposium for Testing and Failure Analysis", 2002, Publisher: ASM International, Published in: Phoenix, AZ.
Référencé par
Brevet citant Date de dépôt Date de publication Déposant Titre
USRE43980 *22 févr. 20115 févr. 2013Intersil CorporationLaser decapsulation method
Classifications
Classification aux États-Unis438/15, 257/E21.521, 438/940
Classification internationaleG01R31/26, B23K101/40, B23K26/12, B23K26/08, B23K26/40, B23K26/00, H01L21/56, B23K26/16
Classification coopérativeY10S438/94, B23K26/0853, H01L22/20, B23K2201/40, H01L21/56, H01L2924/0002
Classification européenneH01L21/56, H01L22/20, B23K26/08E4
Événements juridiques
DateCodeÉvénementDescription
14 févr. 2012CCCertificate of correction
5 mai 2010ASAssignment
Free format text: SECURITY AGREEMENT;ASSIGNORS:INTERSIL CORPORATION;TECHWELL, INC.;INTERSIL COMMUNICATIONS, INC.;AND OTHERS;REEL/FRAME:024335/0465
Owner name: MORGAN STANLEY & CO. INCORPORATED, NEW YORK
Effective date: 20100427