USRE43025E1 - Mixed composition interface layer and method of forming - Google Patents
Mixed composition interface layer and method of forming Download PDFInfo
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- USRE43025E1 USRE43025E1 US12/566,533 US56653309A USRE43025E US RE43025 E1 USRE43025 E1 US RE43025E1 US 56653309 A US56653309 A US 56653309A US RE43025 E USRE43025 E US RE43025E
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
- C23C16/029—Graded interfaces
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
- H01L21/28562—Selective deposition
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
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- H01L28/60—Electrodes
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
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- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- Y10T428/24926—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including ceramic, glass, porcelain or quartz layer
Definitions
- the present invention relates to chemisorbed interface layers of mixed composition and methods of forming interfaces, including interface layers in electronic devices and methods of formation.
- an interface forming method can include forming a first layer comprising a first chemical element and chemisorbing on the first layer an interface layer including the first chemical element intermixed with a second chemical element different from the first chemical element.
- the interface layer can include at least one monolayer.
- a second layer is formed on the interface layer and can contain the second chemical element.
- the first layer might not contain the second chemical element.
- the second layer might not contain the first chemical element.
- the first layer can be conductive and the second layer can be insulative.
- the first layer can include a metal other than Ta, such as Pt, and the second layer can include Ta 2 O 5 .
- an electronic device interface forming method includes forming a first layer containing a first chemical element and chemisorbing a first portion of at least one monolayer over the first layer, the first portion including the first chemical element.
- a second portion of the at least one monolayer can be chemisorbed over the first layer and include a second chemical element different from the first chemical element.
- the first and second portions of the at least one monolayer can be contained in an interface layer.
- a second layer can be formed on the interface layer and contain the second chemical element.
- the first portion of the at least one monolayer can be chemisorbed on first parts of the first layer and the second portion of the at least one monolayer can be chemisorbed on second parts of the first layer.
- an electronic device interface forming method can include forming a first device layer containing a first chemical element and chemisorbing a first unsaturated interface layer including the first chemical element on the first device layer.
- the first interface layer can have a thickness of about 1 to about 10 monolayers.
- a second unsaturated interface layer may be chemisorbed at least on the first device layer in areas not saturated by the first interface layer.
- the second interface layer can contain a second chemical element.
- a second device layer containing a second chemical element can be formed on the first and second interface layers.
- An apparatus can include a first layer containing a first chemical element and an interface layer chemisorbed on the first layer.
- the interface layer can contain a first chemical element intermixed with a second chemical element different from the first chemical element.
- the apparatus can further include a second layer on the interface layer containing a second chemical element.
- an electronic device in another aspect of the invention includes a first layer containing a first chemical element, a first portion of at least one monolayer chemisorbed on the first layer, a second portion of the at least one monolayer chemisorbed on the first layer, an interface layer comprising the first and second portions of the at least one monolayer, and a second layer on the interface layer.
- the first portion can contain the first chemical element and the second portion can contain a second chemical element different from the first chemical element.
- the second layer can contain the second chemical element.
- FIG. 1 shows a sectional view of a substrate portion at a processing step according to an aspect of the invention.
- FIG. 2 shows a sectional view of a substrate portion at a processing step subsequent to that shown in FIG. 1 .
- FIG. 3 shows a sectional view of a substrate portion at a processing step subsequent to that shown in FIG. 2 .
- FIG. 4 shows a sectional view of a substrate portion at a processing step subsequent to that shown in FIG. 3 .
- ALD atomic layer deposition
- ALD involves formation of successive atomic layers on a substrate. Such layers may comprise an epitaxial, polycrystalline, amorphous, etc. material. ALD may also be referred to as atomic layer epitaxy, atomic layer processing, etc. Further, the invention may encompass other deposition methods not traditionally referred to as ALD, for example, chemical vapor deposition (CVD), but nevertheless including the method steps described herein. The deposition methods herein may be described in the context of formation on a semiconductor wafer. However, the invention encompasses deposition on a variety of substrates besides semiconductor substrates.
- semiconductor substrate or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including, but not limited to, bulk semiconductive materials such as a semiconductive wafer (either alone or in assemblies comprising other materials thereon), and semiconductive material layers (either alone or in assemblies comprising other materials).
- substrate refers to any supporting structure, including, but not limited to, the semiconductive substrates described above.
- ALD includes exposing an initial substrate to a first chemical species to accomplish chemisorption of the species onto the substrate.
- the chemisorption forms a monolayer that is uniformly one atom or molecule thick on the entire exposed initial substrate. In other words, a saturated monolayer.
- chemisorption might not occur on all portions of the substrate. Nevertheless, such an imperfect monolayer is still a monolayer in the context of this document.
- the first species is purged from over the substrate and a second chemical species is provided to chemisorb onto the first monolayer of the first species.
- the second species is then purged and the steps are repeated with exposure of the second species monolayer to the first species.
- the two monolayers may be of the same species.
- a third species or more may be successively chemisorbed and purged just as described for the first and second species.
- Purging may involve a variety of techniques including, but not limited to, contacting the substrate and/or monolayer with a carrier gas and/or lowering pressure to below the deposition pressure to reduce the concentration of a species contacting the substrate and/or chemisorbed species.
- carrier gases include N 2 , Ar, He, Ne, Kr, Xe, etc.
- Purging may instead include contacting the substrate and/or monolayer with any substance that allows chemisorption byproducts to desorb and reduces the concentration of a contacting species preparatory to introducing another species.
- a suitable amount of purging can be determined experimentally as known to those skilled in the art.
- Purging time may be successively reduced to a purge time that yields an increase in film growth rate.
- the increase in film growth rate might be an indication of a change to a non-ALD process regime and may be used to establish a purge time limit.
- ALD is often described as a self-limiting process, in that a finite number of sites exist on a substrate to which the first species may form chemical bonds. The second species might only bond to the first species and thus may also be self-limiting. Once all of the finite number of sites on a substrate are bonded with a first species, the first species will often not bond to other of the first species already bonded with the substrate.
- process conditions can be varied in ALD to promote such bonding and render ALD not self-limiting. Accordingly, ALD may also encompass a species forming other than one monolayer at a time by stacking of a species, forming a layer more than one atom or molecule thick.
- ALD atomic layer deposition
- CVD chemical vapor deposition
- plasma enhanced CVD plasma enhanced CVD
- ALD is commonly used to form non-selectively a complete, deposited material on a substrate.
- One characteristic of CVD is the simultaneous presence of multiple species in the deposition chamber that react to form the deposited material. Such condition is contrasted with the purging criteria for traditional ALD wherein a substrate is contacted with a single deposition species that chemisorbs to a substrate or previously deposited species.
- An ALD process regime may provide a simultaneously contacted plurality of species of a type or under conditions such that ALD chemisorption, rather than CVD reaction occurs. Instead of reacting together, the species may chemisorb to a substrate or previously deposited species, providing a surface onto which subsequent species may next chemisorb to form a complete layer of desired material.
- chemisorption rate in ALD might be influenced by the composition, crystalline structure, and other properties of a substrate or chemisorbed species.
- Other process conditions for example, pressure and temperature, may also influence chemisorption rate. Accordingly, observation indicates that chemisorption might not occur appreciably on portions of a substrate though it occurs at a suitable rate on other portions of the same substrate.
- an interface forming method may include forming a first layer containing a first chemical element and chemisorbing on the first layer an interface layer containing at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
- the method can further include forming a second layer containing the second chemical element on the interface layer.
- the first and second layers can be formed by any method. Since the interface layer:contains the first chemical element, the interface layer can adhere well to the first layer. Also, since the interface layer contains the second chemical element, the interface layer also can adhere well to the second layer. Accordingly, the interface layer potentially can improve adherence of the second layer over the first layer.
- the above described method can be particularly advantageous when the second layer might not adhere well to the first layer.
- the first and second layer might not adhere well when the first layer does not substantially contain the second chemical element, the second layer does not substantially contain the first chemical element, or both.
- Observation indicates that such circumstance can arise, for example, when the first layer is conductive and the second layer is insulative, or vice versa.
- the method may be particularly useful when the first layer contains a metal other than Ta and the second layer contains Ta 2 O 5 .
- the metal other than Ta can be Pt.
- An exemplary metal-insulator-metal capacitor stack can include, respectively, Pt, Ta 2 O 5 , and Pt.
- the interfacial properties in the stack can influence current leakage and other performance characteristics of the capacitor.
- suitable adhesion of the stack layers maintains integrity of the device.
- an interface layer can be formed between the Pt and Ta 2 O 5 that includes intermixed Pt and Ta 2 O 5 formed by ALD.
- Such a concept can also be used to enhance adhesion of other materials, for example, adhesion of Pt and Ru to oxide containing surfaces, such as barium strontium titanate, lead zirconate titanate, Ta 2 O 5 , etc.
- an electronic device interface forming method includes forming an interface layer between and in contact with a first layer containing a first chemical element and a second layer containing a second chemical element different from the first chemical element.
- the interface layer can be formed separately from forming the first and second layers and contain the first and second chemical elements.
- the interface layer can also be formed such that it does not substantially contain material from the first or second layers as separately formed.
- the interface layer contains at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer.
- the interface layer is described as not substantially containing material from the first or second layers to indicate that the method used to form the interface layer adds material to a surface of the preexisting first or second layer without reliance on material therein to form part of the composition of the interface layer. It is recognized that after formation of the interface layer, insignificant amounts of material from the first or second layers can potentially diffuse into the interface layer. However, such diffusion still allows formation of an interface layer not substantially containing material from the first or second layers.
- Surface nitridation or surface oxidation as known to those skilled in the art are examples of methods that rely on existing materials to form part of a composition in a subsequently formed layer.
- first layer does not substantially contain the second chemical element or the second layer does not substantially contain the first chemical element
- first chemical element refers to the primary composition of the first or second layer excluding contaminants, trace elements, and diffused material from surrounding structures. Understandably, contaminants, trace elements, and diffused materials can potentially insignificantly alter the composition of the first or second layers in a manufacturing process without causing such layers to substantially contain the first or second chemical elements.
- a still further aspect of the invention provides an electronic device interface forming method that includes forming a first layer containing a first chemical element, chemisorbing a first portion of at least one monolayer over the first layer, and chemisorbing a second portion of the at least one monolayer over the first layer.
- the first portion of the at least one monolayer can contain the first chemical element.
- the second portion of the at least one monolayer can contain a second chemical element different from the first chemical element.
- the first and second portions of the at least one monolayer can form part of an interface layer.
- the method can further include forming a second layer containing a second chemical element on the interface layer.
- the first portion of the at least one monolayer can be chemisorbed on first parts of the first layer and the second portion of the at least one monolayer can be chemisorbed on second parts of the first layer.
- an electronic device interface forming method includes forming a first device layer containing a first chemical element, chemisorbing a first unsaturated interface layer containing the first chemical element on the first device layer, and chemisorbing a second unsaturated interface layer at least on the first device layer in areas not saturated by the first interface layer.
- the first interface layer can have a thickness of from about 1 to about 10 monolayers.
- the second interface layer can have a thickness of from about 1 to about 10 monolayers and contain a second chemical element different from the first chemical element.
- the method can further include forming a second device layer containing the second chemical element on the first and second interface layers.
- a first device layer can be a capacitor plate while a second device layer can be a capacitor dielectric.
- the first device layer can be a capacitor dielectric while the second device layer is a capacitor plate.
- a substrate 2 is shown with a first layer 4 formed thereon.
- a first material 6 is formed on parts of first layer 4 but not on other parts of first layer 4 , namely unsaturated areas 14 .
- the first material 6 is shown in FIG. 2 as a graphical representation of individual molecules or atoms chemisorbed to the surface of first layer 4 .
- a second material 8 is shown in graphical representation chemisorbed in formerly unsaturated areas 14 on first layer 4 .
- the monolayer of first material 6 and monolayer of second material 8 formed in unsaturated areas 14 thus form an interface layer 10 .
- Interface layer 10 can have a thickness of from about 1 to about 10 monolayers, or a greater thickness depending on a particular application.
- FIG. 4 shows a second layer 12 formed on interface layer 10 with interface layer 10 shown as a material layer, rather than a graphical representation of chemisorbed molecules or atoms.
- FIGS. 1-4 Although the preferred method described above in relation to FIGS. 1-4 includes separate formation of first material 6 and second material 8 on first layer 4 , the layers of first and second materials 6 , 8 could conceivably be formed simultaneously. Thus, the structure of FIG. 3 can be obtained by forming both first and second materials 6 , 8 on first layer 4 of FIG. 1 simultaneously rather than as shown in FIG. 2 .
- An advantage of using ALD to form first and second materials 6 , 8 is that desired properties of interface layer 10 can be controlled at the atomic level. Interfacial properties such as dead layers, surface defects, vacancies, and impurities, as known to those skilled in the art can be improved with selection of suitable components for the interface layer and ALD processing conditions. For example, saturation of the surface of first layer 4 with intermixed first and second materials 6 , 8 can reduce vacancies at the interface between first layer 4 and second layer 12 . Further, selection of elements exhibiting suitable atomic diameters for interface layer 10 can improve the packing density of the interface between first layer 4 and second layer 12 . The reduction in defects at the interface can provide a better functioning device.
- an interface layer formed according to the various aspects of the invention described above can improve adhesion between first layer 4 and second layer 12 .
- Existing knowledge of those skilled in the art regarding adhesion between particular materials can be used to select a compositional ratio of first material 6 to second material 8 in interface layer 10 .
- such information can be used to select potentially different compositional ratios for each monolayer formed as part of an interface layer.
- interface layer 10 can have a fixed composition among monolayers.
- a ratio of first material 6 to second material 8 may be selected and then processing structured to produce the fixed composition.
- For an interface layer between Ta 2 O 5 and Pt about 5 monolayers of Pt can be chemisorbed on the Ta 2 O 5 followed by about 5 monolayers of Ta 2 O 5 . Additional alternating Pt and Ta 2 O 5 material can be added in about equal numbers of monolayers to a desired interface layer depth.
- the resulting interface layer can exhibit about a 1:1 ratio of Pt to Ta 2 O 5 .
- interface layer 10 can have a composition gradient among monolayers.
- a beginning ratio of first material 6 to second material 8 may be initially selected and then altered as successive monolayers are added to form interface layer 10 .
- a ratio proximate an inner surface of interface layer 10 can thus be different from a ratio proximate an outer surface of interface layer 10 .
- For an interface layer between Ta 2 O 5 and Pt about 5 monolayers of Pt can be chemisorbed on the Ta 2 O 5 followed by about 5 monolayers of Ta 2 O 5 . Additional alternating Pt and Ta 2 O 5 material can be added with one further monolayer of Pt included in each turn.
- Formation of Pt monolayers by ALD can be performed using a precursor pair of a cyclopentadienyl-platinum (Cp-Pt) complex and an oxidizer such as H 2 O, O 3 , O 2 , N 2 O, NO, isopropyl alcohol (IPA), mixtures thereof, and other oxidizers known to those skilled in the art.
- Cp-Pt cyclopentadienyl-platinum
- IPA isopropyl alcohol
- the oxidizer may be pulsed for a time similar to Cp-Pt, followed by another purge to complete one cycle and to form one monolayer having a typical depth of about 1 Angstrom. Completion of five cycles can thus form 5 monolayers.
- Formation of Pt monolayers by ALD can be performed in a similar manner alternatively using Cp-Pt, platinum-hexafluoroacetylacetonate (Pt-HFA), platinum-acetylacetonate, platinum-tetrakis(trifluorophosphine) (Pt(PF 3 ) 4 ), cyclopentadienyl-platinum-trimethyl (CpPtMe 3 ), methylcyclopentadienyl-platinum-trimethyl ((MeCp)PtMe 3 ), or mixtures thereof.
- Cp-Pt platinum-hexafluoroacetylacetonate
- Pt(PF 3 ) 4 platinum-tetrakis(trifluorophosphine)
- CpPtMe 3 platinum-tetrakis(trifluorophosphine)
- CpPtMe 3 cyclopentadienyl-platinum-trimethyl
- Formation of Ta 2 O 5 monolayers by ALD can be performed using a precursor pair of tantalum tetraethoxide dimethylaminoethoxide (TATDMAE) and an oxidizer such as H 2 O, O 3 , O 2 , N 2 O, NO, isopropyl alcohol (IPA), mixtures thereof, and other oxidizers known to those skilled in the art.
- TATDMAE tantalum tetraethoxide dimethylaminoethoxide
- IPA isopropyl alcohol
- the oxidizer may be pulsed for a time similar to TATDMAE, followed by another purge to complete one cycle and to form one monolayer having a typical depth of about 1 Angstrom. Completion of five cycles can thus form 5 monolayers.
- Formation of Ta 2 O 5 monolayers by ALD can be performed in a similar manner alternatively using TATDMAE, TaCl 5 , TaF 5 , tantalum pentaethoxide (TAETO), or mixtures thereof.
- an apparatus can include a first layer containing a first chemical element, an interface layer chemisorbed on the first layer, and a second layer on the interface layer.
- the interface layer can contain at least one monolayer of the first chemical element intermixed with a second chemical element different from the first chemical element.
- the second layer can contain the second chemical element. Examples of material types and compositions for the first layer, interface layer, and second layer are described above.
- an electronic device can include a first layer containing a first chemical element, a second layer containing a second chemical element different from the first chemical element, and an interface layer between and in contact with the first and second layers.
- the interface layer can contain first and second chemical elements and not substantially contain material originating from the first or second layers.
- the interface layer contains at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer.
- An interface layer still does not substantially comprise material originating from the first or second layers when contaminants or trace elements of the first or second layers diffuse into the interface layer.
- an electronic device in a further aspect of the invention, includes a first layer containing a first chemical element, a first portion of at least one monolayer chemisorbed on the first layer, a second portion of the at least one monolayer chemisorbed on the first layer, an interface layer comprising the first and second portions of the at least one monolayer, and a second layer on the interface layer.
- the first portion can contain the first chemical element and the second portion can contain a second chemical element different from the first chemical element.
- the second layer can also contain the second chemical element.
- the first portion of the at least one monolayer is chemisorbed on first parts of the first layer and the second portion of the at least one monolayer is chemisorbed on second parts of the first layer.
- the at least one monolayer can include from about 1 to about 10 monolayers.
Abstract
Description
Claims (45)
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US12/566,533 USRE43025E1 (en) | 2001-04-02 | 2009-09-24 | Mixed composition interface layer and method of forming |
US13/293,778 US20120120549A1 (en) | 2001-04-02 | 2011-11-10 | Mixed Composition Interface Layer and Method of Forming |
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US09/825,087 US6908639B2 (en) | 2001-04-02 | 2001-04-02 | Mixed composition interface layer and method of forming |
US10/228,404 US7273660B2 (en) | 2001-04-02 | 2002-08-26 | Mixed composition interface layer and method of forming |
US12/566,533 USRE43025E1 (en) | 2001-04-02 | 2009-09-24 | Mixed composition interface layer and method of forming |
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US10/228,404 Ceased US7273660B2 (en) | 2001-04-02 | 2002-08-26 | Mixed composition interface layer and method of forming |
US12/566,533 Expired - Lifetime USRE43025E1 (en) | 2001-04-02 | 2009-09-24 | Mixed composition interface layer and method of forming |
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JP5384291B2 (en) * | 2008-11-26 | 2014-01-08 | 株式会社日立国際電気 | Semiconductor device manufacturing method, substrate processing method, and substrate processing apparatus |
WO2011106072A2 (en) | 2010-02-23 | 2011-09-01 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Use of ruthenium tetroxide as a precursor and reactant for thin film depositions |
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Also Published As
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US6908639B2 (en) | 2005-06-21 |
US20120120549A1 (en) | 2012-05-17 |
US20020142588A1 (en) | 2002-10-03 |
US20020192509A1 (en) | 2002-12-19 |
US7273660B2 (en) | 2007-09-25 |
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