|Numéro de publication||USRE43314 E1|
|Type de publication||Octroi|
|Numéro de demande||US 11/800,070|
|Date de publication||17 avr. 2012|
|Date de dépôt||3 mai 2007|
|Date de priorité||26 oct. 2000|
|État de paiement des frais||Payé|
|Autre référence de publication||DE60131768D1, EP1329096A1, EP1329096A4, EP1329096B1, US6888572, WO2002060174A1, WO2002060174A9|
|Numéro de publication||11800070, 800070, US RE43314 E1, US RE43314E1, US-E1-RE43314, USRE43314 E1, USRE43314E1|
|Inventeurs||Lester J. Kozlowski|
|Cessionnaire d'origine||Altasens, Inc.|
|Exporter la citation||BiBTeX, EndNote, RefMan|
|Citations de brevets (42), Citations hors brevets (27), Classifications (11), Événements juridiques (1)|
|Liens externes: USPTO, Cession USPTO, Espacenet|
1. Field of the Invention
The present invention relates generally to electronic imaging devices and, more particularly, to low noise CMOS image sensors having increased optical area within each pixel.
2. Description of the Related Art
Significant advances in photosensor image processing for camera and video systems are now possible through the emergence of CMOS pixel sensors. CMOS-based imaging sensors have distinct manufacturing cost savings and consume much less power than other technologies such as charge coupled devices (CCD). A CMOS image sensor's performance, however, is often limited by the noise generated by resetting each of its photodiodes to a known potential after each electronic image, or picture, is read out. Such noise is readily suppressed in CCD-based cameras because CCD reset noise is generated on only one capacitance, i.e., the sense diffusion diode that converts the photo-generated charge to a voltage. Also, full-frame memory is not needed to post-process the video to remove the reset noise because each pixel's reset and signal levels are successively read and the reset noise is conveniently removed by using only one memory element.
Similarly, the reset noise (kTC) in a CMOS sensor causes uncertainty about the voltage on each photodetector following the reset, but each pixel's reset signal is not normally available. Because the reset noise of CMOS imagers is often the dominant source of temporal noise and is critical to overall imager performance, there is a need for a pixel-based preamplifier that suppresses reset noise without requiring separate readout of all the reset and signal levels, in order to subsequently subtract the correlated reset noise using full-frame memory. In addition, the preamplifier must be as compact as possible to maximize the fraction of pixel area that is used for collecting the light. Simultaneously maximizing the light-gathering area and minimizing the reset noise maximizes sensor performance so that it can operate with usable fidelity even at low levels of light.
Mendis et al., discloses a single-stage, charge coupled device (CCD) type of image sensor in an article entitled, “A 128×128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems”, IEEE Electron Devices Meeting, p. 583, 1993. The overall imager is customarily considered a CMOS imager due to the co-integration of ancillary CMOS electronics that support the pixel preamplifier—even though the scheme requires process enhancements that significantly depart from conventional CMOS technologies. For example, the photogate must be optically transparent in the visible part of the electromagnetic spectrum. A transparent gate electrode must preferably be used to provide reasonable sensitivity in the blue part of the visible spectrum as is commonly done in CCDs, e.g. a thin indium tin oxide (ITO) gate electrode (e.g. U.S. Pat. No. 6,001,668). No CMOS foundry processes support integration of ITO electrodes due to possible wafer contamination and concomitant yield loss. Nevertheless, Mendis' charge-based preamplifier ideally provides a storage site at each pixel that readily facilitates both snapshot image formation and in-pixel correlated double sampling. Another key issue related to incompatibility with standard CMOS technology is the difficulty in optically isolating this storage site to eliminate image smear.
U.S. Pat. No. 5,898,168 teaches a compact CMOS pixel-based preamplifier that uses only three transistors, reproduced as
In view of the foregoing, it would be desirable to have a pixel cell comprising only three transistors, to maximize the optical area, while still having low-noise and minimizing motion artifacts.
In general, the present invention comprises a low-noise imaging system for implementation in CMOS or in other semiconductor fabrication technologies. The low-noise amplifier system efficiently suppresses reset (kTC) noise by using a compact preamplifier consisting of a photodetector and only three transistors of identical polarity in conjunction with ancillary circuits located on the CMOS imager's periphery. A tapered reset signal is applied to a reset transistor within the pixel to reduce the reset noise. The supporting circuits help the simplified pixel circuit to read the signal with low noise without having to perform correlated double sampling on either successive rows or the entire array.
The low noise amplifier system of the present invention is formed by the aggregate circuitry in each pixel, the supporting circuitry in the column buffer amplifier and the row-based clock driver, and the waveform generation circuits servicing each column and row of pixels. The video from the active pixels is read out by the low-noise signal amplification system in a manner that essentially eliminates the reset noise. In addition to means for suppressing the detector's reset noise, the column buffer in the downstream electronics typically performs additional signal processing, sample-and-hold, optional video pipelining, and column amplifier offset cancellation functions to suppress the temporal and spatial noise that could otherwise be generated by the column buffer.
The low-noise system provides the following key functions: (1) suppresses reset noise without having to provide means for analog memory to facilitate correlated double sampling; (2) provides high sensitivity via source follower amplification with small sense capacitance; (3) minimizes demand on amplifier bandwidth to avoid generation of fixed pattern noise due to variations in amplifier time constant and stray capacitance; (4) provides adequate power supply rejection to enable development of imaging systems-on-a-chip that do not require elaborate support electronics; and (5) is compatible with application to imaging arrays having pixel pitch to below 2.7 microns with high optical fill factor and low noise using 0.18 μm CMOS technology.
The invention has the advantage of full process compatibility with standard silicided submicron CMOS; helps to maximize yield and minimize die cost because the circuit complexity is distributed amongst the active-pixels and peripheral circuits; and exploits the signal processing capability inherent to CMOS. Also, the spectral response is broad from the near-ultraviolet (400 nm) to the near-IR (>800 nm).
Because the present invention has only three MOSFETs in each pixel, the invention provides as-drawn optical fill factor of 60% at 5 μm pixel pitch using 0.25 μm design rules in CMOS. The actual optical fill factor is somewhat larger due to lateral collection and the large diffusion length of commercial CMOS processes. A final advantage is the flexibility to collocate digital logic and signal-processing circuits due its high immunity to electromagnetic interference.
When fully implemented in the desired camera-on-a-chip architecture, the low-noise APS can provide temporal read noise below 10 e− (at data rates compatible with either video imaging or still photography via electronic means), fixed pattern noise significantly below 0.02% of the maximum signal (on a par with competing CCD imagers), <0.5% nonlinearity, >1V signal swing for 3.3 V power supply, large charge-handling capacity, and variable sensitivity using simple serial interface updated on a frame-by-frame basis via digital interface to a host microprocessor.
The present invention will be readily understood by the following detailed description in conjunction with the accompanying drawings, wherein like reference numerals designate like structural elements, and in which:
The following description is provided to enable any person skilled in the art to make and use the invention and sets forth the best modes contemplated by the inventor for carrying out the invention. Various modifications, however, will remain readily apparent to those skilled in the art, since the basic principles of the present invention have been defined herein specifically to provide a low noise CMOS image sensor circuit. Any and all such modifications, equivalents and alternatives are intended to fall within the spirit and scope of the present invention.
The CMOS readout and amplification system of the present invention includes an exemplary design for an active-pixel CMOS imager. A prototype embodiment of the low-noise Active Pixel Sensor (APS) invention can be configured, for example, as a visible imager comprising an array of 1024 (columns) by 728 (rows) of visible light detectors (photodetectors). The rows and columns of active-pixels can be spaced 5 microns center-to-center using 0.25 μm design rules to provide as-drawn optical fill factor of ˜60%. Several columns and rows of detectors at the perimeter of the light-sensitive region are normally covered with metal and used to establish the dark level for on-chip or off-chip signal processing. In addition, the detectors in each row can be covered with color filters to produce color imagers. For example, the odd rows may begin at the left with red, green, then blue filters, and the even rows may begin with blue, red, then green filters, with these patterns repeating to fill the respective rows. A standard Bayer filter pattern can also be applied.
The low-noise amplifier system 10 of the present invention is illustrated in the schematic diagram of
Transistor M2 transfers the signal from each detector 12 to the gate of transistor M1 and also connects the detector 12 to the reset node at the gate of transistor M1. Transistor M3 is used in two operating modes. During reset, it completes the reset loop consisting of transistor M3 in the pixel 10, column bus 20, the reset transistor M201 in column circuit 200, and column bus 22. This feedback loop discharges any charge left on the photodetector 12 along with the charge stored on the gate of transistor M1. In combination with amplifier transistor M1, switch transistor M202 in column buffer 200, switch transistor M102 in column buffer 100, and current source Ireset in column buffer 200, low-noise reset of the pixel is accomplished via the aggregate reset amplifier.
The photodiode 12 may comprise a substrate diode, for example, with the silicide cleared. In this embodiment, it is necessary to clear the silicide because it is opaque to visible light. Pixel 10 is designed to obtain the largest available light detecting area while providing broad spectral response, control of blooming and signal integration time, and compatibility with CMOS production processes.
For maximum compatibility with standard submicron CMOS processes, photodiode 12 may be formed at the same time as the lightly doped drain (LDD) implant of n-type MOSFETs for the chosen process; this creates an n-on-p photodiode junction in the p-type substrate that is common to most CMOS processes. Since no additional ion implantation is necessary, the process and wafer cost for active-pixel circuit 10 are the same as those of standard, high volume digital electronic products.
In the preferred embodiment, the photodetectors 12 are reset at the start of image capture on a row-by-row basis as shown in
The present invention configured for signal integration is illustrated in
The application of the tapered reset waveform to the composite reset amplifier enables the kTC noise envelope to decay before the reset switch M3 is completely opened. Using tapered reset, the row is resettable to tens of microseconds for full noise suppression, or shorter time for moderate noise reduction, U.S. Pat. No. 6,697,111, entitled “COMPACT LOW-NOISE ACTIVE PIXEL SENSOR WITH PROGRESSIVE ROW RESET”, issued Feb. 24, 2004, the disclosure of which is herein incorporated by reference, describes the generalized small-signal equivalent circuit model during reset. This circuit allows calculation of the steady-state noise envelope at the reset node depending on reset switch resistance, Rsw. If the reset voltage is ramped down too slowly, too much time is needed to reset each row and operation at video frame rates can become problematic. If the tapered-reset waveform is instead ramped down too quickly, then the kTC noise envelope will not decay sufficiently to suppress reset noise before the switch is completely opened.
Using the small-signal equivalent circuit, a simplified noise formula can be derived since:
Assuming that the amplifier's dc gain, Adc, is much greater than 1, then the RMS reset noise is:
The tapered-clock waveform's time constant is thus appropriately selected so that the dimensionless quantity (k1+k2) is significantly >1. The reset noise is hence reduced to the much smaller quantity stemming from the transconductance amplifier's feedback capacitance. In the present invention, this feedback capacitance is the parasitic Miller capacitance of MOSFET M1.
The present invention has the approximate design values: 1000×700 format, 7 μm×7 μm pixel, gm=20 μmho; Go=0.08 μmho, Adc=300; C1=15 fF; Co=3.0 pF and Cfb=0.3 fF. The desired tapered-clock frequency of 25 kHz that is fully compatible with video rate operation hence requires Rsw=50 GΩ and an optimum tapered-clock time constant of 25 μs. This yields k1+k2=58 for the preferred embodiment, and an equivalent noise capacitance of 1.18 fF. Since the nominal detector capacitance is 15 fF and kTC noise is proportional to the square root of the relevant capacitance, the reset noise is suppressed from about 55 e− to only 14 e−.
The value of Rsw must be tailored to support any changes in line rate. Increasing the line rate hence requires lower switch resistance. Table 1 below numerically illustrates the impact on reset noise as the tapered-clock time constant is appropriately shortened. At a time constant of 2.7 μsec, the read noise degrades to 55 e−.
TABLE 1 Impact on Reset Noise for Preferred Embodiment RSW (GΩ) 50 20 10 5 2 1 0.5 0.1 k1 + k2 58 23.2 11.6 5.8 2.32 1.16 0.58 0.12 Reset Noise (e−) 14 7 21 26 35 41 47 55 τ (μsec) 25 25 24 22 18 14 9.5 2.7
In the preferred embodiment, column bus 20 is monitored by a standard column buffer to read the video signal when it is available. The key requirements on the column buffer are similar to conventional designs having to handle voltage-mode signals and are familiar to those skilled in the art.
In the present invention, the various clocks are generated on-chip using standard CMOS digital logic. This digital logic implementation thus enables “windowing,” wherein a user can read out the imager in various formats simply by enabling the appropriate support logic to clock the appropriate sub-format. With windowing, the 1024×728 format of the candidate embodiment can be read out as one or more arbitrarily sized and positioned M×N arrays without having to read out the entire X×Y array. For example, a user might desire to change a computer-compatible “VGA” format (i.e., approximately 640×480) to either Common Interface Format (CIF; nominally 352×240) or Quarter Common Interface Format (QCIF; nominally 176×120) without having to read out all the pixels in the entire array. This feature simplifies support electronics to reduce cost and match the needs of the particular communication medium. As an example, a personal teleconference link to a remote user having only QCIF capability could be optimized to provide QCIF resolution and thus reduce bandwidth requirements throughout the teleconference link. As a further example, an imager configured in Common Interface Format (CIF) could provide full-CIF images while supplying windowed information for the portions of the image having the highest interest for signal processing and data compression. During teleconferencing the window around a person's mouth (for example) could be supplied more frequently than the entire CIF image. This scheme would reduce bandwidth requirements throughout the conference link.
Though not explicitly shown in
Those skilled in the art will appreciate that various adaptations and modifications of the just-described preferred embodiments can be configured without departing from the scope and spirit of the invention. Therefore, it is to be understood that, within the scope of the appended claims, the invention may be practiced other than as specifically described herein.
|Brevet cité||Date de dépôt||Date de publication||Déposant||Titre|
|US4249122||27 juil. 1978||3 févr. 1981||National Semiconductor Corporation||Temperature compensated bandgap IC voltage references|
|US4463383||5 mai 1982||31 juil. 1984||Sony Corporation||Image pickup apparatus|
|US4466018||19 mai 1982||14 août 1984||Sony Corporation||Image pickup apparatus with gain controlled output amplifier|
|US4676761||22 sept. 1986||30 juin 1987||Commissariat A L'energie Atomique||Process for producing a matrix of electronic components|
|US4794247||18 sept. 1987||27 déc. 1988||Santa Barbara Research Center||Read-out amplifier for photovoltaic detector|
|US5043820||27 mars 1989||27 août 1991||Hughes Aircraft Company||Focal plane array readout employing one capacitive feedback transimpedance amplifier for each column|
|US5055667||21 juin 1990||8 oct. 1991||Loral Fairchild Corporation||Non-linear photosite response in CCD imagers|
|US5083016||27 mars 1990||21 janv. 1992||Hughes Aircraft Company||3-transistor source follower-per-detector unit cell for 2-dimensional focal plane arrays|
|US5128534||17 juil. 1990||7 juil. 1992||Hughes Aircraft Company||High charge capacity focal plane array readout cell|
|US5146302||3 mai 1991||8 sept. 1992||Mitsubishi Denki Kabushiki Kaisha||Charge skimming solid-state imaging device including sampling circuits|
|US5262871 *||13 nov. 1989||16 nov. 1993||Rutgers, The State University||Multiple resolution image sensor|
|US5296696||7 janv. 1993||22 mars 1994||Olympus Optical Co., Ltd.||Solid state image pickup apparatus and driving method|
|US5345266||23 avr. 1992||6 sept. 1994||Vlsi Vision Limited||Matrix array image sensor chip|
|US5382977||21 sept. 1993||17 janv. 1995||Rockwell International Corporation||Electronically scanned buffered direct injection circuit for staring IR focal plane array|
|US5461419 *||7 oct. 1993||24 oct. 1995||Casio Computer Co., Ltd.||Photoelectric conversion system|
|US5471515 *||28 janv. 1994||28 nov. 1995||California Institute Of Technology||Active pixel sensor with intra-pixel charge transfer|
|US5541402||17 oct. 1994||30 juil. 1996||At&T Corp.||Imaging active pixel device having a non-destructive read-out gate|
|US5576763||22 nov. 1994||19 nov. 1996||Lucent Technologies Inc.||Single-polysilicon CMOS active pixel|
|US5587596||20 sept. 1995||24 déc. 1996||National Semiconductor Corporation||Single MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range|
|US5608243||19 oct. 1995||4 mars 1997||National Semiconductor Corporation||Single split-gate MOS transistor active pixel sensor cell with automatic anti-blooming and wide dynamic range|
|US5627112||13 nov. 1995||6 mai 1997||Rockwell International Corporation||Method of making suspended microstructures|
|US5665959||1 juil. 1996||9 sept. 1997||The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Adminstration||Solid-state image sensor with focal-plane digital photon-counting pixel array|
|US5898168||12 juin 1997||27 avr. 1999||International Business Machines Corporation||Image sensor pixel circuit|
|US5929434||13 août 1997||27 juil. 1999||Rockwell Science Center, Llc||Ultra-low noise high bandwidth interface circuit for single-photon readout of photodetectors|
|US5933190||18 avr. 1996||3 août 1999||Imec Vzw||Pixel structure, image sensor using such pixel structure and corresponding peripheral circuitry|
|US5952686 *||3 déc. 1997||14 sept. 1999||Hewlett-Packard Company||Salient integration mode active pixel sensor|
|US6001668||23 déc. 1997||14 déc. 1999||Eastman Kodak Company||Method of fabricating a image sensor having ITO electrodes with overlapping color filters for increased sensitivity|
|US6064431||25 févr. 1997||16 mai 2000||Canon Kabushiki Kaisha||Photoelectric conversion device|
|US6130423 *||10 juil. 1998||10 oct. 2000||Pixel Cam, Inc.||Method and apparatus for a CMOS image sensor with a distributed amplifier|
|US6166767 *||3 nov. 1997||26 déc. 2000||Sharp Kabushiki Kaisha||Active solid-state imaging device which effectively suppresses fixed-pattern noise|
|US6243134||27 févr. 1998||5 juin 2001||Intel Corporation||Method to reduce reset noise in photodiode based CMOS image sensors|
|US6424375 *||21 sept. 1999||23 juil. 2002||Pixel Devices, International||Low noise active reset readout for image sensors|
|US6469740 *||2 févr. 1998||22 oct. 2002||Matsushita Electric Industrial Co., Ltd.||Physical quantity distribution sensor and method for driving the same|
|US6493030 *||8 avr. 1998||10 déc. 2002||Pictos Technologies, Inc.||Low-noise active pixel sensor for imaging arrays with global reset|
|US6532040 *||9 sept. 1998||11 mars 2003||Pictos Technologies, Inc.||Low-noise active-pixel sensor for imaging arrays with high speed row reset|
|US6538245 *||26 oct. 2000||25 mars 2003||Rockwell Science Center, Llc.||Amplified CMOS transducer for single photon read-out of photodetectors|
|US6650369 *||30 sept. 1998||18 nov. 2003||Canon Kabushiki Kaisha||Image sensing apparatus, signal detection apparatus, and signal accumulation apparatus|
|US6697111 *||8 avr. 1998||24 févr. 2004||Ess Technology, Inc.||Compact low-noise active pixel sensor with progressive row reset|
|USRE34802||8 oct. 1993||29 nov. 1994||Loral Fairchild Corporation||Non-linear photosite response in CCD imagers|
|USRE34908||24 janv. 1994||18 avr. 1995||Hughes Aircraft Company||3-transistor source follower-per-detector unit cell for 2-dimensional focal plane arrays|
|WO1999053683A1 *||17 févr. 1999||21 oct. 1999||Conexant Systems Inc||Compact low-noise active pixel sensor with progressive row reset|
|WO2000055919A1 *||16 mars 2000||21 sept. 2000||Conexant Systems Inc||Low-noise cmos active pixel sensor for imaging arrays with high speed global or row reset|
|1||Chamberlin, et al., "A Novel Wide Dynamic Range Silicon Photodetector And Linear Imaging Array", IEEE Transactions On Electron Devices, Vo. ED-31, No. 2, Feb. 1984, pp. 175-182.|
|2||Copy of International Search Report.|
|3||Degrauwe, et al., "A Microppower CMOS-Instrumentation Amplifier", IEEE Journal Of Solid-State Circuits, vol. SC-20, No. 3 Jun. 1985, pp. 805-807.|
|4||EG&G Reticon Sales Catalog, Image Sensing and Solid State Camera Products 1994/1995. High-Speed Solid State Image Sensor Array Specification For Part No. RA2568N.|
|5||EG&G Reticon Sales Catalog, Image Sensing and Solid State Camera Products 1994/1995. Solid State Image Sensor Array Specification For Part No. RA0256B.|
|6||EG&G Reticon Sales Catalog, Image Sensing and Solid State Camera Products 1994/1995. Solid State Sensor Arrays Specification For Part Nos. RA0100A/RA0128N.|
|7||G.P. Weckler and R.H. Dyck, "Integrated Arrays Of Silicon Photodetectors For Image Sensing", Wescon, Aug. 22-25, 1967, pp. 1-8.|
|8||G.P. Weckler, "Charge Storage Lights The Way for Solid-State Image Sensors", Electronics, May 1, 1967, pp. 75-78.|
|9||G.P. Weckler, "Operation of p-n Junction Photodetectors in A Photon Flux Integrating Mode", IEEE Journal of solid State Circuits, vol. SC-2, No. 3, Sep. 1967, pp. 65-73.|
|10||G.P. Weckler, "Storage Mode Operation Of A Phototransistor And Its Adaptation To Integrated Arrays Foe Image Detection", IEDM, Oct. 1996. (Abstract Only-No known paper available from professional document delivery services).|
|11||G.P. Weckler, "Storage Mode Operation Of A Phototransistor And Its Adaptation To Integrated Arrays Foe Image Detection", IEDM, Oct. 1996. (Abstract Only—No known paper available from professional document delivery services).|
|12||H. Ando, S. Ohba, M. Nakai, T. Ozaki, M. Ozawa, K. Ikeda, T. Masuhara, T. Imaide, I. Takemoto, T. Suzuki and T. Fujita, "Design Consideration And Performance Of A New MOS Imaging Device", IEEE Trans. On Elec. Dev., ED-32 (8), Aug. 1985, pp. 1484-1489.|
|13||J.D. Plummer and J.D. Meindl, "MOS Electronics For A portable Reading Aid For The Blind", IEEE J. Solid-State Circuits, SC-7, Apr. 1972, pp. 111-119.|
|14||L.J. Kozlowski, D. Standley, J. Luo, A Tomasini, A. Gallagher, R. Mann, B.C. Hsieh, T. Liu and W.E. Kleinhans, "Theoretical Basis And Experimental Confirmation: Why A CMOS Imager Is Superior To A CD", SPIE Conference on Infrared Technology and Applications XXV, Orlando, Fla, Apr. 1999, vol. 369, pp. 388-396.|
|15||L.J. Kozlowski, J. Luo, W.E. Kleinhans and T. Lui, "Comparison of Passive And Active Pixel Schemes for CMOS Visible Imagers", SPIE, vol. 3360, Apr. 1998.|
|16||Letter Dated Jul. 31, 1998, From Gene Weckler, RAD-I-CON Imaging Corp., addressed to Mark Wettler.|
|17||Mendis, et al., "A 128×128 CMOS Active Pixel Image Sensor for Highly Integrated Imaging Systems," IEEE Electron Device Meeting, p. 583, 1993.|
|18||Ming-Jer Chin, Yen-Bin Gu, Terry Wu, Po-Chin Hsu and Tsung-Hann Liu, "Weak Inversion Charge Injection In Analog MOS Switches", IEEE Journal of Solid-State Circuits, vol. 30, No. 5, May 1995, pp. 604-606.|
|19||N. Koikke, I. Takemoto, K. Satoh, S. Hanamura, S. Nagahara and M. Nubo, "MOS Area Sensor: Part I-Design Consideration And Performance Of An n-p-n Structure 484×384 Element Color MOS Imager", IEEE Trans Electron Devices, ED-27 (8), Aug. 1980, pp. 1676-1681.|
|20||N. Koikke, I. Takemoto, K. Satoh, S. Hanamura, S. Nagahara and M. Nubo, "MOS Area Sensor: Part I—Design Consideration And Performance Of An n-p-n Structure 484×384 Element Color MOS Imager", IEEE Trans Electron Devices, ED-27 (8), Aug. 1980, pp. 1676-1681.|
|21||N. Tanaka, S. Hashimoto, M. Shinohara, S. Sugawa, m. Norishita, S. Matsumora, Y. Nakamura and T. Ohmi, A 310k Pixel Bipolar Imager (BASIS), ISSCC 1989.|
|22||N. Tanaka, T. Ohmi and Y. Nakamura, "A Novel Bipolar Imaging Device With Self-Noise Reduction Capability", IEEE Trans. Elec. Dev., 36 (1), Jan. 1989, pp. 31-38.|
|23||N. Tanaka, T. Ohmi, Y. Nakamura and S. Matsumoto, "A Low-Noise Bi-CMOS Linear Imager Sensor With AufoFocusing Function", IEEE Trans. Elec. Dev., 36 (1), Jan. 1989, pp. 39-45.|
|24||Peter W. Fry, Peter J. W. Noble and Robert J. Rycroft, "Fixed-Pattern Noise In Photomatrices", IEEE Journal of Solid-State Circuits, vol. SC-5, No. 5, Oct. 1970, pp. 250-254.|
|25||R.H. Dyck and G.P. Weckler, "Integrated Arrays Of Silicon Photodetectors For Image Sensing", IEEE Trans. Electron Devices, ED-15, Apr. 1968, pp. 196-201.|
|26||S. Ohba, M. Nakai, H. Ando, S. Hanamura, S. Shimada, K. Satoh, K. Takahashi, M. Kubo and T. Fujita, "MOS Area Sensor: Part II-Low Noise MOS Area Sensor with Antiblooming Photodiodes", IEEE Trans. Electron Devices, ED-27 (8), Aug. 1980, pp. 1682-1687.|
|27||S. Ohba, M. Nakai, H. Ando, S. Hanamura, S. Shimada, K. Satoh, K. Takahashi, M. Kubo and T. Fujita, "MOS Area Sensor: Part II—Low Noise MOS Area Sensor with Antiblooming Photodiodes", IEEE Trans. Electron Devices, ED-27 (8), Aug. 1980, pp. 1682-1687.|
|Classification aux États-Unis||348/308, 250/208.1, 348/301, 348/241|
|Classification internationale||H01J27/00, H04N5/217, H01L27/146, H04N5/335, H04N5/363|
|28 sept. 2012||FPAY||Fee payment|
Year of fee payment: 8