UST954009I4 - Method for the thermal oxidation of silicon with added chlorine - Google Patents

Method for the thermal oxidation of silicon with added chlorine Download PDF

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Publication number
UST954009I4
UST954009I4 US05/596,498 US59649875A UST954009I4 US T954009 I4 UST954009 I4 US T954009I4 US 59649875 A US59649875 A US 59649875A US T954009 I4 UST954009 I4 US T954009I4
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US
United States
Prior art keywords
silicon
thermal oxidation
layer
oxide
chlorine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
US05/596,498
Inventor
Konrad Malin
Dietrich Seybold
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2314746A external-priority patent/DE2314746C2/en
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Priority to US05/596,498 priority Critical patent/UST954009I4/en
Application granted granted Critical
Publication of UST954009I4 publication Critical patent/UST954009I4/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
    • H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
    • H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form

Abstract

the dry thermal oxidation of silicon semiconductor material to produce an oxide layer, such as the gate oxide of a field effect transistor, is carried out by flowing oxygen over the surface of the semiconductor at an elevated temperature to form a layer of silicon oxide. The electrical properties of the layer are improved by adding chlorine to the oxygen in the form of between 0.2 and 5.0 mol % of carbon tetrachloride in order to introduce chlorine into the growing oxide layer.
US05/596,498 1973-03-24 1975-07-16 Method for the thermal oxidation of silicon with added chlorine Pending UST954009I4 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US05/596,498 UST954009I4 (en) 1973-03-24 1975-07-16 Method for the thermal oxidation of silicon with added chlorine

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE2314746A DE2314746C2 (en) 1973-03-24 1973-03-24 Process for the thermal oxidation of silicon with the addition of a chlorocarbon compound
DT2314746 1973-03-24
US43949174A 1974-02-04 1974-02-04
US05/596,498 UST954009I4 (en) 1973-03-24 1975-07-16 Method for the thermal oxidation of silicon with added chlorine

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US43949174A Continuation 1973-03-24 1974-02-04

Publications (1)

Publication Number Publication Date
UST954009I4 true UST954009I4 (en) 1977-01-04

Family

ID=27185154

Family Applications (1)

Application Number Title Priority Date Filing Date
US05/596,498 Pending UST954009I4 (en) 1973-03-24 1975-07-16 Method for the thermal oxidation of silicon with added chlorine

Country Status (1)

Country Link
US (1) UST954009I4 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US20070166892A1 (en) * 2006-01-19 2007-07-19 Fujitsu Limited Method and apparatus of fabricating semiconductor device
US20080014745A1 (en) * 2006-04-14 2008-01-17 Ryota Fujitsuka Method of manufacturing semiconductor device
US20080096394A1 (en) * 2006-10-20 2008-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Gate dielectric layers and methods of fabricating gate dielectric layers

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5593497A (en) * 1986-03-31 1997-01-14 Canon Kabushiki Kaisha Method for forming a deposited film
US6329229B1 (en) 1993-11-05 2001-12-11 Semiconductor Energy Laboratory Co., Ltd. Method for processing semiconductor device, apparatus for processing a semiconductor and apparatus for processing semiconductor device
US20070166892A1 (en) * 2006-01-19 2007-07-19 Fujitsu Limited Method and apparatus of fabricating semiconductor device
US8227355B2 (en) * 2006-01-19 2012-07-24 Fujitsu Semiconductor Limited Method and apparatus of fabricating semiconductor device
US20080014745A1 (en) * 2006-04-14 2008-01-17 Ryota Fujitsuka Method of manufacturing semiconductor device
US8008152B2 (en) * 2006-04-14 2011-08-30 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
US20080096394A1 (en) * 2006-10-20 2008-04-24 Taiwan Semiconductor Manufacturing Co., Ltd. Gate dielectric layers and methods of fabricating gate dielectric layers
US7713854B2 (en) 2006-10-20 2010-05-11 Taiwan Semiconductor Manufacturing Co., Ltd. Gate dielectric layers and methods of fabricating gate dielectric layers

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