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Numéro de publicationUST955008 I4
Type de publicationOctroi
Numéro de demande05/693,385
Date de publication1 févr. 1977
Date de dépôt7 juin 1976
Date de priorité
19 août 1974
Inventeurs
Cessionnaire d'origine
Classification aux États-Unis
Classification internationale
Classification coopérative
Classification européenne
H01L 24/81
H01L 23/15
Références
Liens externes
Flip chip structure including a silicon semiconductor element bonded to an Si.sub.3 N.sub.4 base substrate
US T955008 I4
Résumé

A semiconductor device and carrier assembly package having a silicon integrated circuit semiconductor device provided with at least three raised electrical contacts on a first surface, a device support substrate of Si.sub.3 N.sub.4 provided with a conductive metallurgy pattern on at least one surface, the conductive pattern including an electrical contact configuration matching the raised electrical contacts on the device, metallurgical bonds between the raised electrical contacts on the device and the electrical contact pattern on the support substrate, and an electrically conductive means for electrically connecting elements of the conductive metallurgy pattern to coacting elements off the support substrate.

Référencé par
Brevet citant Date de dépôt Date de publication Déposant Titre
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