WO1987006764A1 - Process for manufacturing semiconductor devices - Google Patents
Process for manufacturing semiconductor devices Download PDFInfo
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- WO1987006764A1 WO1987006764A1 PCT/US1987/000766 US8700766W WO8706764A1 WO 1987006764 A1 WO1987006764 A1 WO 1987006764A1 US 8700766 W US8700766 W US 8700766W WO 8706764 A1 WO8706764 A1 WO 8706764A1
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- WIPO (PCT)
- Prior art keywords
- polycrystalline silicon
- layer
- over
- depositing
- stacks
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 56
- 239000000463 material Substances 0.000 claims abstract description 35
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000002019 doping agent Substances 0.000 claims abstract description 29
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 7
- 239000010703 silicon Substances 0.000 claims abstract description 7
- 238000010438 heat treatment Methods 0.000 claims abstract 4
- 230000008878 coupling Effects 0.000 claims abstract 2
- 238000010168 coupling process Methods 0.000 claims abstract 2
- 238000005859 coupling reaction Methods 0.000 claims abstract 2
- 238000000151 deposition Methods 0.000 claims description 21
- 239000002210 silicon-based material Substances 0.000 claims description 19
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000007943 implant Substances 0.000 claims description 10
- 230000005669 field effect Effects 0.000 claims description 9
- 238000001020 plasma etching Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims 8
- 230000000873 masking effect Effects 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 abstract description 3
- 239000010937 tungsten Substances 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- 238000000206 photolithography Methods 0.000 description 7
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 229910015900 BF3 Inorganic materials 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 3
- -1 phosphorus ion Chemical class 0.000 description 3
- 206010010144 Completed suicide Diseases 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005755 formation reaction Methods 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41775—Source or drain electrodes for field effect devices characterised by the proximity or the relative position of the source or drain electrode and the gate electrode, e.g. the source or drain electrode separated from the gate electrode by side-walls or spreading around or above the gate electrode
- H01L29/41783—Raised source or drain electrodes self aligned with the gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/009—Bi-MOS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/01—Bipolar transistors-ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/124—Polycrystalline emitter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
Definitions
- This invention relates to semiconductor processing and more particularly to a semiconductor process that can produce bipolar transistor and field effect transistors (BICMOS) on the same chip.
- BICMOS bipolar transistor and field effect transistors
- the p-region that is established in these processes for the PMOS device is created by implanting boron directly into the semiconductor material.
- the boron cannot be doped too heavily since it tends to channel quite readily through the crystalline structure of the semiconductor material during implantation thereby causing a larger junction depth than desired.
- a light doping of boron produces an element 5 of the semiconductor device which has a higher resistance than desirable.
- ID. and base regions is reduced in accordance with the present invention wherein stacks of materials are created over the areas of the substrate corresponding to the gate elements of the field effect transistors and the emitter elements of the bipolar transistors that are
- An insulating layer is deposited over the entire wafer including the stacks. This layer is then reactive ion etched such that the insulating layer remains only as walls around the stacks. A polycrystalline layer is then deposited
- 35 low resistance material is then selectively deposited over the polycrystalline silicon material so as to establish contact with the elements of the individual transistors.
- FIGS. 1 through 13 are sectional views of a semiconductor wafer showing various processing steps for manufacturing a BICMOS structure. Detailed Description
- a semiconductor wafer having a cross-section of the type illustrated in FIG. 1 a p-type semiconductor silicon wafer is cleaned, and an oxide layer is deposited thereon which layer is etched in accordance with a mask to expose surface areas of the wafer 12. Arsenic is then implanted into these areas and driven into the wafer structure to create n+ buried wells 11 and 12. After the oxide layer is removed, a p-type epitaxial layer of about 1 ⁇ m is grown over the wafer. Areas corresponding to n wells 13 and 14 in FIG. l, .
- the areas in between the devices corresponding to the field isolation regions 16 can then be selectively etched and filled in with a field oxide growth thereby isolating the active elements.
- the next mask can then be used to block out the wells corresponding to the PMOS and bipolar devices, and the NMOS device is exposed to a doubly ionized boron implant in order to isolate the NMOS device.
- Removal of the pad oxide and nitride stacks can then be performed, followed by a sacrificial oxide growth which is removed followed by a gate oxide growth of about 200 angstroms, thereby creating the oxide regions 17 in FIG. 1.
- a lithography technique is used to establish a photoresist layer 21 (FIG. 2) over the bipolar active elements on the wafer thereby blocking them from
- Ionized boron, B+ is then implanted at a dose of about 8x10' ' to
- a boron fluoride, BF-, implant can then be made at a dopant level of 1 to 5 x 10 13 atoms/cm 2 and an
- the photoresist layer 31 is then stripped from the wafer and a polycrystalline silicon layer 41 (FIG._4) of 350 nm is then deposited over the
- This polycrystalline silicon layer also increases the thickness of the polycrystalline silicon layer 18 remaining over the MOS devices.
- This entire polycrystalline silicon layer 41 is then implanted with an arsenic dopant having a dosage of 1 x 10 atoms/crrr at an energy of about 40 KeV. As a result, the entire polycrystalline silicon layer 41 is embedded with an n- type dopant. This dopant reservoir in layer 41 will subsequently serve as the source of dopant material for the creation of an emitter over the base layer 32 of the bipolar device.
- a silicon nitride layer 42 is then deposited with a thickness of about 50 to 100 nm over the entire wafer, and a polycrystalline silicon layer 43 is also deposited over the entire wafer with a thickness of about 600 nm.
- a photolithography step including reactive ion etching, is then used to define the stacks of material designated in FIG. 5 by the numerals 51, 52 and 53. These stack formations are positioned over those areas of the wafer which will eventually correspond to the gate electrodes of the MOS devices and the emitter electrode of the bipolar devices.
- a conformal oxide 61 which will serve as the sidewall oxide is then deposited over the entire wafer to a thickness of about 200 nm as indicated in FIG. 6.
- An anisotropic reactive ion etching process is then used to remove portions of the oxide.
- This reactive ion etching process removes all of the oxide which was deposited over the tops of the stacks 51, 52 and 53 and all of the oxide between the walls of oxide adjacent to the stacks thereby resulting in silicon dioxide walls 71 surrounding the stacks as indicated in FIG. 7. This sidewall formation results due to the highly directional nature of the reactive ion etching process.
- the wafer is then cleaned and a polycrystalline silicon layer 81 having a thickness of 200 nm is deposited over the entire wafer as shown in FIG. 8.
- a photolithography process is used to define the polycrystalline layer between active devices.
- the polycrystalline silicon is etched isotropically so that individual devices are isolated.
- a next photolithography step defines photoresist layer 91 which covers the PMOS and bipolar devices thereby permitting the polycrystalline silicon layer covering the NMOS devices and the collector region 15 of the bipolar device to be implanted with a phosphorus ion implant.
- This phosphorus ion implant is delivered at a dose of 1 to 5 x 10 15 atoms/cm 2 and an energy of 25 to 75 KeV to create an n+ doping of the polycrystalline layers covering the collector region 15 and the NMOS device areas.
- Photoresist layer 91 positioned over the PMOS and bipolar devices is then stripped.
- a next photolithography step is then used to establish a photoresist layer over the NMOS active devices and the collector region 15 thereby establishing a photoresist layer 95 in FIG. 10 which is the complement of the one shown as 91 in FIG. 9.
- the PMO * S and bipolar devices are then exposed to a boron fluoride BF- ion implant having a dosage of 1 to
- This BF 2 implant causes the polycrystalline material covering the PMOS and parts of the bipolar devices to achieve P+ type doping. The photoresist is then removed.
- the entire wafer is then covered (FIG. 11) with a silicon nitride deposition (102) having a thickness of about 80 nm.
- This silicon nitride deposition will protect the polycrystalline silicon in a subsequent step during which a photoresist layer is selectively etched back.
- the next step in the process requires that a planerizing photoresist material with a uniform thickness of 3 to 5 ⁇ m be applied to the entire wafer, resulting in photoresist layer 101 in FIG. 11.
- This photoresist layer 101 is then etched back to a point where the tops of the stacks 51, 52 and 53 are clearly exposed.
- the cross-sectional view of the wafer is not as yet as shown in FIG. 12 since the nitride layer and polycrystalline silicon layer are still covering the tops of the silicon dioxide walls.
- the exposed silicon nitride is removed by using a reactive ion etching process which results in the removal of about 80 nm of material.
- the remaining photoresist material is then hardened and the exposed polycrystalline material is etched back. The remaining photoresist material is then removed.
- the critical areas of polycrystalline material which remain are those shown and designated in FIG. 12 as areas 111, 112, 113 and 114.
- Areas 111 of polycrystalline material surrounding the silicon dioxide walls for the NMOS device were previously exposed in the step corresponding to FIG. 9 to a dopant of phosphorus ions thereby' resulting in a reservoir of n-type dopant in this polycrystalline mate-rial.
- Areas 112 and 113 of polycrystalline material surround the silicon dioxide walls corresponding to the PMOS and bipolar devices. These areas of polycrystalline material were implanted in the step corresponding to FIG. 10 with a boron fluoride dopant, thereby making these areas reservoirs of p-type material.
- the polycrystalline material designated as area 114 in the cross-section shown in FIG. 12 is what remains from the polycrystalline silicon which was deposited as layer 41 in FIG. 4 and implanted with arsenic so as to create a reservoir of n-type material.
- the entire wafer is heated to a temperature of about 950 degrees Centigrade for about 60 minutes in order to cause these reservoirs of implanted dopants to diffuse into the silicon substrate thereby creating source and drain regions 115, 116, 117 and 118, the extrinsic base region 119, and a region 120 under stack 53 of the bipolar device, thereby creating an emitter base junction between it and the p-type base region 32 previously created.
- a wet etch of phosphoric acid at 155 degrees in a reflux system is then performed to remove the remaining silicon nitride over the entire wafer.
- the wafer is then subjected to a selective deposit of tungsten or to a self-aligned suicide reaction thereby creating a conductive deposit 121 having a thickness of about 100 nm over all of the exposed areas of polycrystalline silicon as shown in FIG. 13.
- the protruding oxide wall structures improve the selective process so that no conductive material will form or remain over the areas of silicon dioxide.
- the entire wafer can then be annealed in order to reduce the resistivity of the conductive material.
- the high oxide wall protruding above the gate surface is removed using a wet oxide etch.
- a CVD deposition creates a layer of silicon dioxide 138 over the entire wafer as shown in FIG. 14, thereby joining the silicon dioxide walls with the field oxides that separate the individual elements of the device.
- This silicon dioxide layer has a thickness of about 400 nm.
- a combination of a wet etch and reactive ion etch can be used to create the holes through the silicon dioxide 138 down to the level of the tungsten or suicide deposit.
- the photoresist material used during the lithography step is then removed.
- the inventive process is equally applicable to a semiconductor wafer wherein only field effect transistors are created. in this case, the stacks of semiconductor material are positioned over the gate structures only and the steps necessary for the processing of the bipolar devices may be eliminated.
- the self-aligned polysilicon contact still results in lowering the source and drain capacitance of the field effect transistors that are much closer than the spacing that can be achieved in prior art processes.
- the process may be applicable to bipolar devices alone and the emitter-base structure created by the process is again lower capacitance and resistance, and therefore capable of operating at higher speeds, than the devices produced in prior art processes.
Abstract
A process for creating bipolar and CMOS transistors on a p-type silicon substrate. The silicon substrate has typical n+ buried wells and field oxide regions to isolate the individual transistor devices. In accordance with the process, stacks (51, 52, 53) of material are created over the gate elements of the CMOS devices and over the emitter elements of the bipolar transistors. The stacks of material over the gate elements have a silicon dioxide gate layer (17) in contact with the epitaxial layer of the substrate, and the stacks of material over the emitter elements have a polycrystalline silicon layer (32) in contact with the epitaxial layer. Walls (61) of silicon dioxide are created around the stacks in order to insulate the material within the stacks from the material deposited outside of the walls. Polycrystalline silicon (81) in contact with the epitaxial layer is deposited outside the walls surrounding the stacks. All polycrystalline silicon layers in contact with the epitaxial layer are implanted with appropriate dopants such that these layers serve as reservoirs of dopant in order to simultaneously create the source and drain elements of the CMOS devices and the emitter elements of the bipolar devices during a heating step in the process. A tungsten layer is deposited over the polycrystalline layer in order to provide a conductive coupling to aluminum electrodes.
Description
PROCESS FOR MANUFACTURING SEMICONDUCTOR
Devices
Background of the Invention
This invention relates to semiconductor processing and more particularly to a semiconductor process that can produce bipolar transistor and field effect transistors (BICMOS) on the same chip.
Several BICMOS processes have been disclosed in the prior art which can result in a combination of bipolar and field effect transistors on the same semiconductor device. Examples of these prior art processes can be found in Patent No. 4,536,945 issued August 27, 1985 to G. Bruce et al and Patent No. 4,484,388 issued November 27, 1984 to I. Hiroshi. Both of these prior art processes have been found to be limited in producing very high-speed semiconductor devices. In both of the processes the gate structure itself is used as an alignment mechanism in determining the position of the contacts that are made to the active elements of the device. In both processes the metallic contacts are made directly to the source and drain regions. The dimension of these regions is dependent upon the precision with which a hole can be placed with respect to the gate structure. This fact causes the source and drain regions to be larger than desirable, thereby causing these regions to have a larger parasitic capacitance than desirable which in turn limits high¬ speed operation.
In addition, the p-region that is established in these processes for the PMOS device is created by implanting boron directly into the semiconductor material. As is well-known in the art, the boron cannot be doped too heavily since it tends to channel quite
readily through the crystalline structure of the semiconductor material during implantation thereby causing a larger junction depth than desired. On the other hand, a light doping of boron produces an element 5 of the semiconductor device which has a higher resistance than desirable. These problems are solved by the present invention. Summary of the Invention
The dimensional size of the source and drain
ID. and base regions is reduced in accordance with the present invention wherein stacks of materials are created over the areas of the substrate corresponding to the gate elements of the field effect transistors and the emitter elements of the bipolar transistors that are
15 to be created in the resulting devices. An insulating layer is deposited over the entire wafer including the stacks. This layer is then reactive ion etched such that the insulating layer remains only as walls around the stacks. A polycrystalline layer is then deposited
20 over the entire wafer including the walls and the stacks. Portions of this polycrystalline layer are then removed outside of the areas that define the individual transistor devices thereby, creating islands of isolated polycrystalline silicon material where appropriate.
25" Appropriate dopants are then deposited into these islands of polycrystalline silicon material to create reservoirs of dopant materials, and the doped islands are then etched back to the point where the walls around the stacks form insulating boundaries between the
30 material within the walls and polycrystalline silicon material outside the walls. The wafer is then heated so as to drive the dopants from the polycrystalline silicon material into the substrate wherever the polycrystalline silicon material is in contact with the substrate. A
35 low resistance material is then selectively deposited over the polycrystalline silicon material so as to establish contact with the elements of the individual
transistors.
Brief Description of the Drawing
FIGS. 1 through 13 are sectional views of a semiconductor wafer showing various processing steps for manufacturing a BICMOS structure. Detailed Description
Techniques well-known to those in the semiconductor processing art are used to create a semiconductor wafer having a cross-section of the type illustrated in FIG. 1. In brief, a p-type semiconductor silicon wafer is cleaned, and an oxide layer is deposited thereon which layer is etched in accordance with a mask to expose surface areas of the wafer 12. Arsenic is then implanted into these areas and driven into the wafer structure to create n+ buried wells 11 and 12. After the oxide layer is removed, a p-type epitaxial layer of about 1 μm is grown over the wafer. Areas corresponding to n wells 13 and 14 in FIG. l,.are defined using a mask and a photolithography process step and then the wells are created by driving in a phosphorus implant. A pad oxide growth and nitride deposition are then performed over the entire wafer structure followed by a lithographic step which defines all of the active areas corresponding to the NMOS, PMOS and bipolar devices that are to be created during the following steps, such areas being designed by legends in FIG. 1.
The areas in between the devices corresponding to the field isolation regions 16 can then be selectively etched and filled in with a field oxide growth thereby isolating the active elements. The next mask can then be used to block out the wells corresponding to the PMOS and bipolar devices, and the NMOS device is exposed to a doubly ionized boron implant in order to isolate the NMOS device. Removal of the pad oxide and nitride stacks can then be performed, followed by a sacrificial oxide growth which is removed followed
by a gate oxide growth of about 200 angstroms, thereby creating the oxide regions 17 in FIG. 1. Finally, a deposition of polycrystalline silicon (POLY) material is created over the entire wafer in order to provide 5 layer 18, which layer has a dimension of about 50 nm. All of these processing steps described thus far are well-known to those skilled in the silicon semiconductor processing art and are similar to those that have been described in prior art patents relating to this
10" technology.
After forming the wafer illustrated in FIG. 1, a lithography technique is used to establish a photoresist layer 21 (FIG. 2) over the bipolar active elements on the wafer thereby blocking them from
15 subsequent implantation of the dopant. Ionized boron, B+, is then implanted at a dose of about 8x10' ' to
2x10 12 atoms/cm 7 with an energy of 30 to 100 KeV. As a result, a threshold implant is established for the MOS devices on the wafer. The photoresist layer 21 is then
20 stripped from the wafer, and a photolithography step is then used to create another photoresist layer 31 (FIG. 3) over the areas of the wafer corresponding to the MOS devices. The polycrystalline silicon layer (18) covering the bipolar devices is etched, and a wet oxide
25 etch of BHF is used to remove the gate oxide layer (17) over the bipolar devices, thereby exposing the n-type layer corresponding to the area 14 of the substrate. A boron fluoride, BF-, implant can then be made at a dopant level of 1 to 5 x 1013 atoms/cm2 and an
3.0 energy of 25 to 50 KeV in order to create a p-type layer 32 which will eventually serve as the base of the bipolar device. The photoresist layer 31 is then stripped from the wafer and a polycrystalline silicon layer 41 (FIG._4) of 350 nm is then deposited over the
35 entire wafer. This polycrystalline silicon layer also
increases the thickness of the polycrystalline silicon layer 18 remaining over the MOS devices. This entire
polycrystalline silicon layer 41 is then implanted with an arsenic dopant having a dosage of 1 x 10 atoms/crrr at an energy of about 40 KeV. As a result, the entire polycrystalline silicon layer 41 is embedded with an n- type dopant. This dopant reservoir in layer 41 will subsequently serve as the source of dopant material for the creation of an emitter over the base layer 32 of the bipolar device. A silicon nitride layer 42 is then deposited with a thickness of about 50 to 100 nm over the entire wafer, and a polycrystalline silicon layer 43 is also deposited over the entire wafer with a thickness of about 600 nm.
A photolithography step, including reactive ion etching, is then used to define the stacks of material designated in FIG. 5 by the numerals 51, 52 and 53. These stack formations are positioned over those areas of the wafer which will eventually correspond to the gate electrodes of the MOS devices and the emitter electrode of the bipolar devices. A conformal oxide 61 which will serve as the sidewall oxide is then deposited over the entire wafer to a thickness of about 200 nm as indicated in FIG. 6. An anisotropic reactive ion etching process is then used to remove portions of the oxide. This reactive ion etching process removes all of the oxide which was deposited over the tops of the stacks 51, 52 and 53 and all of the oxide between the walls of oxide adjacent to the stacks thereby resulting in silicon dioxide walls 71 surrounding the stacks as indicated in FIG. 7. This sidewall formation results due to the highly directional nature of the reactive ion etching process.
The wafer is then cleaned and a polycrystalline silicon layer 81 having a thickness of 200 nm is deposited over the entire wafer as shown in FIG. 8. A photolithography process is used to define the polycrystalline layer between active devices. The polycrystalline silicon is etched isotropically so that
individual devices are isolated.
As indicated in FIG. 9, a next photolithography step defines photoresist layer 91 which covers the PMOS and bipolar devices thereby permitting the polycrystalline silicon layer covering the NMOS devices and the collector region 15 of the bipolar device to be implanted with a phosphorus ion implant. This phosphorus ion implant is delivered at a dose of 1 to 5 x 1015atoms/cm2 and an energy of 25 to 75 KeV to create an n+ doping of the polycrystalline layers covering the collector region 15 and the NMOS device areas. Photoresist layer 91 positioned over the PMOS and bipolar devices is then stripped.
A next photolithography step is then used to establish a photoresist layer over the NMOS active devices and the collector region 15 thereby establishing a photoresist layer 95 in FIG. 10 which is the complement of the one shown as 91 in FIG. 9. The PMO*S and bipolar devices are then exposed to a boron fluoride BF- ion implant having a dosage of 1 to
10 x 10-'• atoms/cm2 and an energy of 25 to 35 KeV as shown in FIG. 10. This BF2 implant causes the polycrystalline material covering the PMOS and parts of the bipolar devices to achieve P+ type doping. The photoresist is then removed.
The entire wafer is then covered (FIG. 11) with a silicon nitride deposition (102) having a thickness of about 80 nm. This silicon nitride deposition will protect the polycrystalline silicon in a subsequent step during which a photoresist layer is selectively etched back.
The next step in the process requires that a planerizing photoresist material with a uniform thickness of 3 to 5 μm be applied to the entire wafer, resulting in photoresist layer 101 in FIG. 11. This photoresist layer 101 is then etched back to a point where the tops of the stacks 51, 52 and 53 are clearly
exposed. The cross-sectional view of the wafer is not as yet as shown in FIG. 12 since the nitride layer and polycrystalline silicon layer are still covering the tops of the silicon dioxide walls. At this point, the exposed silicon nitride is removed by using a reactive ion etching process which results in the removal of about 80 nm of material. The remaining photoresist material is then hardened and the exposed polycrystalline material is etched back. The remaining photoresist material is then removed.
The critical areas of polycrystalline material which remain are those shown and designated in FIG. 12 as areas 111, 112, 113 and 114. Areas 111 of polycrystalline material surrounding the silicon dioxide walls for the NMOS device were previously exposed in the step corresponding to FIG. 9 to a dopant of phosphorus ions thereby' resulting in a reservoir of n-type dopant in this polycrystalline mate-rial. Areas 112 and 113 of polycrystalline material surround the silicon dioxide walls corresponding to the PMOS and bipolar devices. These areas of polycrystalline material were implanted in the step corresponding to FIG. 10 with a boron fluoride dopant, thereby making these areas reservoirs of p-type material. In addition, the polycrystalline material designated as area 114 in the cross-section shown in FIG. 12 is what remains from the polycrystalline silicon which was deposited as layer 41 in FIG. 4 and implanted with arsenic so as to create a reservoir of n-type material. At this point in the process the entire wafer is heated to a temperature of about 950 degrees Centigrade for about 60 minutes in order to cause these reservoirs of implanted dopants to diffuse into the silicon substrate thereby creating source and drain regions 115, 116, 117 and 118, the extrinsic base region 119, and a region 120 under stack 53 of the bipolar device, thereby creating an emitter base junction between it and the p-type base
region 32 previously created.
A wet etch of phosphoric acid at 155 degrees in a reflux system is then performed to remove the remaining silicon nitride over the entire wafer. The wafer is then subjected to a selective deposit of tungsten or to a self-aligned suicide reaction thereby creating a conductive deposit 121 having a thickness of about 100 nm over all of the exposed areas of polycrystalline silicon as shown in FIG. 13. The protruding oxide wall structures improve the selective process so that no conductive material will form or remain over the areas of silicon dioxide. The entire wafer can then be annealed in order to reduce the resistivity of the conductive material. The high oxide wall protruding above the gate surface is removed using a wet oxide etch.
After cleaning the entire wafer, a CVD deposition creates a layer of silicon dioxide 138 over the entire wafer as shown in FIG. 14, thereby joining the silicon dioxide walls with the field oxides that separate the individual elements of the device. This silicon dioxide layer has a thickness of about 400 nm. Using a photolithography process and a mask that defines the positions of the holes that are to be created in this silicon dioxide layer to make contact to the previously deposited conductive materials, a combination of a wet etch and reactive ion etch can be used to create the holes through the silicon dioxide 138 down to the level of the tungsten or suicide deposit. The photoresist material used during the lithography step is then removed. Finally, aluminum is deposited and patterned to form the electrodes shown as 131 through 136 in FIG. 14. Contact to the emitter and collector elements of the bipolar device can be made in a similar fashion in a plane not shown in the FIG. 14 cross- section. The wafer is then heated in a final sintering step.
The inventive process is equally applicable to a semiconductor wafer wherein only field effect transistors are created. in this case, the stacks of semiconductor material are positioned over the gate structures only and the steps necessary for the processing of the bipolar devices may be eliminated. The self-aligned polysilicon contact still results in lowering the source and drain capacitance of the field effect transistors that are much closer than the spacing that can be achieved in prior art processes. Similarly," the process may be applicable to bipolar devices alone and the emitter-base structure created by the process is again lower capacitance and resistance, and therefore capable of operating at higher speeds, than the devices produced in prior art processes.
Claims
1. In a process for creating transistor devices in selected areas of a semiconductor wafer wherein stacks (51, 52, 53) of appropriate materials have been created over predetermined portions of the selected areas corresponding to elements of the transistors, the steps characterized by depositing an insulating layer (61) over the entire wafer including the stacks, directionally selective etching said * insulating layer such that the insulating layer remains only as walls around the stacks, depositing a polycrystalline silicon layer (81) over the wafer including the walls and stacks, removing the polycrystalline layer outside of the areas that define the individual transistors thereby creating islands of isolated polycrystalline silicon material, depositing appropriate dopants into the islands of polycrystalline silicon material, etching the doped islands of polycrystalline silicon material back to the point where the oxide walls form protruding insulating boundaries between the polycrystalline silicon material within the walLs and outside of the walls, heating the wafer so as to drive the dopants from the polycrystalline silicon material into the substrate where the polycrystalline * silicon' aterial is in contact with said substrate, and selectively depositing a low resistance material (132) over the polycrystalline silicon material so as to establish contact with elements of the individual transistors.
2. In a process as defined in claim 1 wherein the transistor devices include both NMOS and PMOS devices and the step of depositing appropriate dopants into the islands of polycrystalline silicon material comprises the following steps: masking the areas of the semiconductor wafer corresponding to the NMOS devices, depositing a p-type implant into the polycrystalline silicon covering the areas corresponding to the PMOS devices, masking the areas of the semiconductor wafer corresponding to the PMOS devices, and depositing an n- type implant into the polycrystalline silicon covering the areas corresponding 'to the NMOS devices.
3. A process for forming field effect transistors and bipolar transistors in a semiconductor wafer characterized by the steps of creating layer (111,114) of appropriately doped polycrystalline silicon material over areas of the semiconductor wafer that are to become source and drain regions of the field effect transistors and emitter regions of the bipolar transistors, and heating the semiconductor wafer such that the dopants from the polycrystalline silicon layers are diffused into the semiconductor wafer thereby simultaneously forming the source and drain regions of the field effect transistors and the emitter regions of the bipolar transistors.
4. In a process as defined in claim 3 wherein the field effect transistors include both NMOS and PMOS devices and the step of creating layers of appropriately doped polycrystalline silicon material comprises the following steps: implanting a p+type dopant into the polycrystalline silicon material over the PMOS and bipolar devices, and implanting an n+type dopant in'to the polycrystalline silicon material over the NMOS devices.
5. In a process as defined in claim 4, where, as known, n-i- buried wells have been implanted in a p- type silicon substrate, a p-type epitaxial layer has been grown over the substrate, and field isolation regions have been created to isolate the CMOS and bipolar transistor regions on the wafer, said process characterized by the following steps: growing a gate oxide over the entire layer; depositing a polycrystalline silicon material over the entire wafer; selectively etching the wafer to remove the polycrystalline silicon layer and the gate oxide that cover areas to be occupied by the bipolar transistors; implanting a p-type dopant in the exposed epitaxial layer; depositing a polycrystalline silicon layer over the entire wafer; implanting the polycrystalline layer 5 with an n-type dopant to create a reservoir of n-type dopant; depositing a silicon nitride layer over the entire wafer; depositing a second polycrystalline layer over the silicon nitride layer; selectively etching the polycrystalline silicon and nitride layers to create
10" stacks of polycrystalline silicon and silicon nitride over the regions of the wafer corresponding to gate elements of the CMOS devices and emitter elements of the bipolar devices; depositing a conformal oxide over the entire wafer; selectively etching the entire wafer so as
15 to remove all of the conformal oxide except that which is adjacent to the stacks of polycrystalline silicon and silicon nitride to create walls of silicon dioxide around the stacks; depositing a polycrystalline silicon layer over the entire wafer; selectively etching the
20 last deposited polycrystalline silicon layer to create islands of polycrystalline silicon over the CMOS and bipolar transistors; selectively implanting an n-type dopant in the islands of polycrystalline silicon corresponding to the N OS transistors to create a
25. reservoir of n-type dopant; selectively implanting a p+ type dopant in the islands of polycrystalline silicon corresponding to the PMOS and bipolar devices to create a reservoir of p-type dopant; selectively removing the polycrystalline silicon layer to a predetermined
30 distance from the epitaxial layer such that the silicon nitride inside the walls of silicon dioxide is fully exposed; heating the wafer to pause the reservoirs of implanted dopants to diffuse into the epitaxial layer thereby simultaneously creating source and drain regions
35 for the CMOS transistors and an emitter region for the bipolar transistors; removing the silicon nitride within the walls of silicon dioxide; and depositing a conductive material over the exposed polycrystalline silicon layers in order to permit conductive coupling to the elements of the CMOS and bipolar transistors.
6. In a process as defined in claim 5 wherein the step of selectively removing the polycrystalline silicon layer to a predetermined distance from the epitaxial layer comprises the following steps: depositing a silicon nitride layer over the entire wafer; depositing a uniform thickness of photoresist material over the entire wafer; etching the photoresist material back to a point where the tops of the stacks are clearly exposed; reactive ion etching the exposed silicon nitride thereby exposing polycrystalline material; etching the exposed polycrystalline silicon material thereby exposing the silicon nitride inside the walls of silicon dioxide.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE8787903050T DE3767431D1 (en) | 1986-04-23 | 1987-03-31 | METHOD FOR PRODUCING SEMICONDUCTOR COMPONENTS. |
KR1019870701212A KR910002831B1 (en) | 1986-04-23 | 1987-03-31 | Process for manufacturing semiconductor devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85488586A | 1986-04-23 | 1986-04-23 | |
US854,885 | 1986-04-23 |
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WO1987006764A1 true WO1987006764A1 (en) | 1987-11-05 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1987/000766 WO1987006764A1 (en) | 1986-04-23 | 1987-03-31 | Process for manufacturing semiconductor devices |
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US (2) | US4784971A (en) |
EP (1) | EP0265489B1 (en) |
JP (1) | JP2537936B2 (en) |
KR (1) | KR910002831B1 (en) |
CA (2) | CA1271566A1 (en) |
DE (1) | DE3767431D1 (en) |
ES (1) | ES2004607A6 (en) |
WO (1) | WO1987006764A1 (en) |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2626406A1 (en) * | 1988-01-22 | 1989-07-28 | France Etat | Bipolar transistor compatible with MOS technology |
EP0443252A2 (en) * | 1990-02-20 | 1991-08-28 | AT&T Corp. | Process for fabricating a bipolar transistor with a self-aligned contact |
EP0443252A3 (en) * | 1990-02-20 | 1993-06-30 | American Telephone And Telegraph Company | Process for fabricating a bipolar transistor with a self-aligned contact |
EP0452720A2 (en) * | 1990-04-02 | 1991-10-23 | National Semiconductor Corporation | A semiconductor structure and method of its manufacture |
EP0452720A3 (en) * | 1990-04-02 | 1994-10-26 | Nat Semiconductor Corp | A semiconductor structure and method of its manufacture |
US5661046A (en) * | 1990-04-02 | 1997-08-26 | National Semiconductor Corporation | Method of fabricating BiCMOS device |
Also Published As
Publication number | Publication date |
---|---|
ES2004607A6 (en) | 1989-01-16 |
DE3767431D1 (en) | 1991-02-21 |
US4824796A (en) | 1989-04-25 |
CA1271566A1 (en) | 1990-07-10 |
CA1273128C (en) | 1990-08-21 |
EP0265489B1 (en) | 1991-01-16 |
KR910002831B1 (en) | 1991-05-06 |
JP2537936B2 (en) | 1996-09-25 |
JPS63503185A (en) | 1988-11-17 |
KR880701461A (en) | 1988-07-27 |
EP0265489A1 (en) | 1988-05-04 |
US4784971A (en) | 1988-11-15 |
CA1273128A (en) | 1990-08-21 |
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