WO1989011676A1 - Electro-optic device - Google Patents

Electro-optic device Download PDF

Info

Publication number
WO1989011676A1
WO1989011676A1 PCT/GB1989/000565 GB8900565W WO8911676A1 WO 1989011676 A1 WO1989011676 A1 WO 1989011676A1 GB 8900565 W GB8900565 W GB 8900565W WO 8911676 A1 WO8911676 A1 WO 8911676A1
Authority
WO
WIPO (PCT)
Prior art keywords
waveguide
electrode
electro
overlies
ground plane
Prior art date
Application number
PCT/GB1989/000565
Other languages
French (fr)
Inventor
Robert Norman Shaw
Original Assignee
Bt&D Technologies Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bt&D Technologies Limited filed Critical Bt&D Technologies Limited
Publication of WO1989011676A1 publication Critical patent/WO1989011676A1/en

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/21Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference
    • G02F1/225Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure
    • G02F1/2255Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  by interference in an optical waveguide structure controlled by a high-frequency electromagnetic component in an electric waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/29Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
    • G02F1/31Digital deflection, i.e. optical switching
    • G02F1/313Digital deflection, i.e. optical switching in an optical waveguide structure
    • G02F1/3132Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type
    • G02F1/3134Digital deflection, i.e. optical switching in an optical waveguide structure of directional coupler type controlled by a high-frequency electromagnetic wave component in an electric waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00Function characteristic
    • G02F2203/21Thermal instability, i.e. DC drift, of an optical modulator; Arrangements or methods for the reduction thereof

Definitions

  • This invention relates to electro-optic waveguide devices and in particular but not exclusively to interferometers and directional couplers made from ferroelectric materials such as lithium niobate.
  • Electro-optic materials such as lithium niobate (LNB) and KTP, have refractive indices which vary according to the magnitude and direction of applied electric field.
  • Waveguide devices based on such materials are potentially useful for optical fibre communication and signal processing systems.
  • Such devices are required to operate with light of wavelengths in the range 0.6 to 1.6 ⁇ m, and in particular with light in the range 1.3 to
  • an input waveguide is coupled to an output waveguide by a pair of waveguide arms.
  • Each arm has an associated electrode by means of which it is possible to control the refractive indices of, and hence the velocity of propagation in, the two arms independently. It is therefore possible, by controlling the applied electric fields, to produce phase differences between signals travelling in the two arms resulting in constructive or destructive interference when they are combined. Thus it is possible to amplitude modulate input optical signals according to the voltage difference between the electrodes.
  • materials such as LNB which exhibit the electro-optic effect tend also to be pyroelectric: electric fields are produced within the material as the result of a temperature change.
  • the pyroelectric effect is so strong that a temperature change of a degree or less may be sufficient to produce an electric field comparable to that applied to produce switching of states in a directional coupler or MZ interferometer made of the material.
  • Such electric fields strongly affect the optical states of the devices. Consequently it is necessary, with materials such as z-cut LNB which exhibit a strong pyroelectric effect, to provide very precise temperature control if reliable and repeatable performance is to be achieved from electro-optic waveguide devices based on such materials.
  • the need to provide precise temperature control is a disadvantage and a disincentive to the use of such materials.
  • the problems of thermal instability are particularly severe in devices in which there is a non-symmetrical arrangement of electrodes.
  • Examples of devices with non-symmetrical electrode arrangements include directional couplers and MZ interferometers having travelling-wave electrodes.
  • travelling-wave electrodes potentially enables the production of devices capable of very high speed operation (typically switchable at gigabit rates).
  • the electrode arrangement consists of a first electrode, overlying a first waveguide arm of the device and configured as a transmission line, generally in the form of a narrow strip, and a second electrode, the ground electrode, overlying a second waveguide arm of the device, and generally much more extensive than the first electrode.
  • an electro-optic waveguide device comprising first and second waveguide segments, a travelling-wave electrode having a portion aligned with and overlying a first elongate portion of said first segment, a ground electrode having a portion overlying and extending along a second elongate portion of said second segment, characterised in that said ground electrode overlies only part of the width of said second waveguide segment throughout said second elongate portion.
  • Figure 1(a) is a schematic plan view of a conventional Mach-Zehnder interferometer with low speed electrodes
  • Figure 1(b) shows schematically a cross section, along the line A-A 1 , through the device of Figure 1(a).
  • Figure 1(c) is a schematic plan view of a conventional Mach-Zehnder interferometer with a travelling-wave electrode structure for high speed operation;
  • Figure 1(d) is a schematic plan view of a conventional directional coupler with low speed electrodes
  • Figure 1(e) is a schematic plan view of a conventional directional coupler with a travelling-wave electrode structure for high speed operation
  • Figure 2 is a schematic plan view of a Mach-Zehnder interferometer according to the present invention.
  • Figure 3 is a schematic cross-sectional view along the line A-A of Figure 2;
  • Figure 4 is a schematic plan view of a directional coupler according to the present invention.
  • Figure 5 shows the transfer characteristic of an MZ interferometer.
  • alloy are formed on the buffer layer over part of the waveguide 1.
  • the substrate 2 which is a sawn and polished slice of crystal, is typically 40mm long, lOmm wide and lmm thick.
  • the underside of the substrate is metallised 4.
  • the waveguides are approximately 5 ⁇ m wide, with the waveguide arms 17 and 18 separated by about 10 ⁇ m.
  • FIG. 1(a) - 1(e) are shown conventional directional couplers and HZ interferometers with electrode structures suitable for use with z-cut LNB.
  • An optical waveguide pattern 1 is formed in a lithium niobate substrate 2 by selective diffusion of titanium.
  • a buffer layer 3 of silicon dioxide, alumina or indium tin oxide is, optionally, formed over the waveguide pattern 1.
  • Electrodes 5 and 6 of gold, aluminium or an aluminium When a voltage is applied across the electrodes, some of the field passes through the waveguides. For a z-cut LNB device, it is the vertical component of the field which changes the refractive index of the material.
  • the transfer characteristic of an MZ interferometer is shown in Figure 5.
  • the characteristic is essentially a periodic cos squared function, with peaks occurring where there is constructive interference, and troughs where there is destructive interference.
  • the electrode voltage required to drive the output from a peak to a trough is the switching voltage V .
  • the voltage required to obtain the output peak nearest to zero volts is the phase bias voltage V .
  • a typical switching voltage for 20mm long electrodes, on z-cut LNB, is about 3.5 volts.
  • the phase bias voltage can be any value up to the switching voltage.
  • Figures la and Id show devices having low speed electrode arrangements, in each case the electrode to which the modulating signal is applied, hereinafter the 'live electrode' 5,15, and the electrode which is connected to ground, hereinafter the 'ground electrode' 6,16, are the same size and shape and are disposed relative to their respective waveguide portions 7,17 and 8,18 in essentially the same way.
  • Figures lc and le show devices having electrodes arranged for high speed operation.
  • a travelling-wave electrode 25,35 which is in the form of a stripline not much wider (width typically 13 ⁇ m) than the associated waveguide portion 27,37 (typical width 9j.m) and which overlies and extends along the top of that waveguide portion, while the ground electrode 26,36 overlies its waveguide portion 28,38 to a similar extent but extends laterally to cover a much larger area of substrate than the travelling wave electrode does.
  • Devices with such an electrode arrangement are particularly sensitive to temperature changes, especially when made from z-cut LNB.
  • the electrode separation there is no necessity for the electrode separation to be increased (a typical separation is lOjim), in effect the electrodes can both be moved by the same amount relative to the waveguides.
  • a typical separation is lOjim
  • the electrodes can both be moved by the same amount relative to the waveguides.
  • Such a rearrangement is possible without exposing the waveguide "previously" covered by the travelling-wave electrode because the travelling-wave electrode is generally wider than the waveguide (to ease alignment problems and to reduce the risk of electro-migration). If the waveguide which is under the travelling-wave electrode were to be part exposed as a result of that electrode's repositioning, some of the benefits of exposing the other waveguide could be lost as the result of unscreened pyroelectric charge being present over both waveguides.
  • Electrodes on the surface of a pyroelectric material give rise to local variations in any pyroelectric field produced.
  • the electrodes are immediately over the waveguides, consequently the waveguides are likely to be subjected to the local variations in field associated with the presence of the electrodes.
  • both waveguide portions experience similar variations in pyroelectric field as the temperature of the substrate varies.
  • the two waveguide portions will be subject to unequal pyroelectric fields as the temperature of the substrate varies.
  • the imbalance in the pyroelectric fields results in a temperature induced shift of the electro-optic transfer characteristic and thus an increased temperature sensitivity.
  • the field lines associated with the unscreened charge are caused to pass through the waveguide as they do through the waveguide associated with the other electrode. This contrasts with the situation in prior art devices , where the ground plane electrode covers and extends significantly beyond the edges of its associated waveguide, which results in the field lines associated with the unscreened pyroelectric charge and largely or wholly missing the waveguide.
  • the invention is applicable to any material which exhibits both the electro-optic effect and the pyroelectric effect and for which the electrodes are arranged generally to overlie the waveguides/waveguide portions, that is those in which the component of electric field normal to the substrate surface (the 'vertical' field) influences the refractive index of the waveguide.
  • the usual electrode arrangement involves the electrodes lying adjacent rather than above the waveguides, since in the x-cut material it is the component of electric field parallel to the substrate surface which influences the refractive index of the waveguide.
  • temperature sensitivity ascribable to distortions of the pyroelectric field caused by unbalanced electrode dispostion are likely to be worst where there is a travelling-wave electrode arrangement and it is to such adjations that the present invention is particularly directed.

Abstract

In electro-optic waveguide devices such as directional couplers and Mach-Zehnder interferometers having travelling-wave electrodes which overlie the waveguides, temperature sensitivity is reduced by arranging the ground plane electrode to overlie only part of the width of its associated waveguide portion. The invention has particular application to z-cut lithium niobate.

Description

ELECTRO-OPTIC DEVICE
This invention relates to electro-optic waveguide devices and in particular but not exclusively to interferometers and directional couplers made from ferroelectric materials such as lithium niobate.
Electro-optic materials, such as lithium niobate (LNB) and KTP, have refractive indices which vary according to the magnitude and direction of applied electric field. Waveguide devices based on such materials are potentially useful for optical fibre communication and signal processing systems. Typically such devices are required to operate with light of wavelengths in the range 0.6 to 1.6μm, and in particular with light in the range 1.3 to
Figure imgf000003_0001
There are two basic device types: directional couplers; and Mach-Zehnder (MZ) interferometers. The first of these utilises the electro-optic effect to control the coupling between a pair of adjacent waveguides. By controlling their refractive indices it is possible to couple light from one waveguide to the other or vice versa. In an HZ interferometer an input waveguide is coupled to an output waveguide by a pair of waveguide arms. Each arm has an associated electrode by means of which it is possible to control the refractive indices of, and hence the velocity of propagation in, the two arms independently. It is therefore possible, by controlling the applied electric fields, to produce phase differences between signals travelling in the two arms resulting in constructive or destructive interference when they are combined. Thus it is possible to amplitude modulate input optical signals according to the voltage difference between the electrodes. Unfortunately, materials such as LNB, which exhibit the electro-optic effect tend also to be pyroelectric: electric fields are produced within the material as the result of a temperature change. With some materials, notably z-cut LNB, the pyroelectric effect is so strong that a temperature change of a degree or less may be sufficient to produce an electric field comparable to that applied to produce switching of states in a directional coupler or MZ interferometer made of the material. Such electric fields strongly affect the optical states of the devices. Consequently it is necessary, with materials such as z-cut LNB which exhibit a strong pyroelectric effect, to provide very precise temperature control if reliable and repeatable performance is to be achieved from electro-optic waveguide devices based on such materials. Clearly the need to provide precise temperature control is a disadvantage and a disincentive to the use of such materials. With z-cut LNB this disincentive is so strong that despite its stronger electro-optic effect, which would make possible the use of lower operating voltages and shorter devices, the material is eschewed in favour of x-cut LNB, which is less strongly pyroelectric, despite the latter*s inferior electro-optic properties. Unfortunately, electro-optic devices made from x-cut LNB, unlike those made from z-cut LNB, require complex electrode structures which are generally incompatible with high speed operation.
The problems of thermal instability are particularly severe in devices in which there is a non-symmetrical arrangement of electrodes. Examples of devices with non-symmetrical electrode arrangements include directional couplers and MZ interferometers having travelling-wave electrodes. The use of travelling-wave electrodes potentially enables the production of devices capable of very high speed operation (typically switchable at gigabit rates). In such devices the electrode arrangement consists of a first electrode, overlying a first waveguide arm of the device and configured as a transmission line, generally in the form of a narrow strip, and a second electrode, the ground electrode, overlying a second waveguide arm of the device, and generally much more extensive than the first electrode. The problem of the thermal instability of devices made from z-cut LNB has been investigated, see for example the paper by Skeath et al, Appl. Phys. Lett., 49 (19), 10 November 1986, pp 1221-1223, and that by Gee et al, Appl. Phys. Lett., 47 (3), 1 August 1985, pp 211-213, but as yet no one appears to have devised a workable solution which would enable the system application of z-cut LNB without very precise temperature control, particularly in the case that the electrodes are non-symmetrically disposed over the waveguide branches.
According to the present invention there is provided an electro-optic waveguide device comprising first and second waveguide segments, a travelling-wave electrode having a portion aligned with and overlying a first elongate portion of said first segment, a ground electrode having a portion overlying and extending along a second elongate portion of said second segment, characterised in that said ground electrode overlies only part of the width of said second waveguide segment throughout said second elongate portion.
By offsetting the electrodes in this way the temperature sensitivity of devices made from z-cut LNB is markedly reduced. In figure 1 of the above referenced paper by Gee et al there is shown a Mach-Zehnder interferometer with what is termed a πd.c bias" built-in by making a section of one interferometer arm, that under the ground electrode, appreciably wider than the second interferometer arm. However, neither this nor the second described method of providing a built-in bias, that is by making the two arms of the interferometerdifferent lengths, is favoured by Gee et al over the simpler alternative of applying, in operation, an appropriate electrical d.c bias. The relevance of the above referenced Figure 1 is that while the 'fattened1 waveguide portion extends towards the other (second) interferometer arm, the side of the gound plane electrode which lies closest to the second interferometer arm is straight and is aligned with the relevant edge of the waveguide regions which make up the bulk of the first interferometer arm. Consequently, part of the waveguide associated with the ground plane electrode is not actually covered by the ground plane electrode. It is not clear whether the illustrated electrode configuration is the result of a drafting error, as it is nowhere mentioned in the text and, significantly, differs from the more detailed Figure 1 in the similar paper of CM Gee and G.D. Thurmond published in SPIE. Vol 47, Optical Technology for Microwave Applications (1984), pp 17-22, which shows an identical waveguide structure, but an electrode configuration in which the inner edges of the electrodes are coterminous with their respective waveguides.
A possible reason for Gee et al forming the ground plane electrode as shown in Figure 1 of the first referenced of their papers is their interest in maximising the ratio of lateral resistance relative to longitudial resistance for the purpose of minimising voltage induced drift. It is clear that Gee et al did not appreciate that the position of the edge of the ground plane electrode relative to the edge of the associated waveguide was in any way relevant to the problems of pyrolectric drift. Consequently, it is believed that the above referenced papers by Gee et al are of no further relevance to the present invention.
Preferred embodiments of the present invention will now be described, by way of example only, with reference to the accompanying drawings in which:
Figure 1(a) is a schematic plan view of a conventional Mach-Zehnder interferometer with low speed electrodes;
Figure 1(b) shows schematically a cross section, along the line A-A1, through the device of Figure 1(a).
Figure 1(c) is a schematic plan view of a conventional Mach-Zehnder interferometer with a travelling-wave electrode structure for high speed operation;
Figure 1(d) is a schematic plan view of a conventional directional coupler with low speed electrodes;
Figure 1(e) is a schematic plan view of a conventional directional coupler with a travelling-wave electrode structure for high speed operation;
Figure 2 is a schematic plan view of a Mach-Zehnder interferometer according to the present invention;
Figure 3 is a schematic cross-sectional view along the line A-A of Figure 2;
Figure 4 is a schematic plan view of a directional coupler according to the present invention;
Figure 5 shows the transfer characteristic of an MZ interferometer. alloy are formed on the buffer layer over part of the waveguide 1. The substrate 2, which is a sawn and polished slice of crystal, is typically 40mm long, lOmm wide and lmm thick. The underside of the substrate is metallised 4. For an MZ interferometer the waveguides are approximately 5μm wide, with the waveguide arms 17 and 18 separated by about 10μm.
In Figure 1(a) - 1(e) are shown conventional directional couplers and HZ interferometers with electrode structures suitable for use with z-cut LNB. An optical waveguide pattern 1 is formed in a lithium niobate substrate 2 by selective diffusion of titanium. A buffer layer 3 of silicon dioxide, alumina or indium tin oxide is, optionally, formed over the waveguide pattern 1. Electrodes 5 and 6 of gold, aluminium or an aluminium When a voltage is applied across the electrodes, some of the field passes through the waveguides. For a z-cut LNB device, it is the vertical component of the field which changes the refractive index of the material.
The transfer characteristic of an MZ interferometer is shown in Figure 5. The characteristic is essentially a periodic cos squared function, with peaks occurring where there is constructive interference, and troughs where there is destructive interference. The electrode voltage required to drive the output from a peak to a trough is the switching voltage V . The voltage required to obtain the output peak nearest to zero volts is the phase bias voltage V . A typical switching voltage for 20mm long electrodes, on z-cut LNB, is about 3.5 volts. The phase bias voltage can be any value up to the switching voltage. Figures la and Id show devices having low speed electrode arrangements, in each case the electrode to which the modulating signal is applied, hereinafter the 'live electrode' 5,15, and the electrode which is connected to ground, hereinafter the 'ground electrode' 6,16, are the same size and shape and are disposed relative to their respective waveguide portions 7,17 and 8,18 in essentially the same way.
By way of contrast, Figures lc and le show devices having electrodes arranged for high speed operation. In each case there is a travelling-wave electrode 25,35 which is in the form of a stripline not much wider (width typically 13μm) than the associated waveguide portion 27,37 (typical width 9j.m) and which overlies and extends along the top of that waveguide portion, while the ground electrode 26,36 overlies its waveguide portion 28,38 to a similar extent but extends laterally to cover a much larger area of substrate than the travelling wave electrode does. Devices with such an electrode arrangement are particularly sensitive to temperature changes, especially when made from z-cut LNB.
We have discovered that if, instead of the electrode arrangement shown in Figures lc and le, an electrode arrangement of the type shown in Figure 2 and 4 is used the degree of temperature sensitivity can be markedly reduced, even in z-cut LNB. The difference between the old electrode arrangement and that according to the invention is that the larger electrode, in this case the ground electrode, instead of covering the entire width of its associated waveguide portion extends only part way over its associated waveguide portion. Typically, optimum results will be obtained with the ground electrode offset to expose about half the width of its associated waveguide portion. Where the limbs of the waveguide are 7-8 ιm wide the ground electrode will then typically be offset to expose 3-4μm of the width of the waveguide.
There is no necessity for the electrode separation to be increased (a typical separation is lOjim), in effect the electrodes can both be moved by the same amount relative to the waveguides. Such a rearrangement is possible without exposing the waveguide "previously" covered by the travelling-wave electrode because the travelling-wave electrode is generally wider than the waveguide (to ease alignment problems and to reduce the risk of electro-migration). If the waveguide which is under the travelling-wave electrode were to be part exposed as a result of that electrode's repositioning, some of the benefits of exposing the other waveguide could be lost as the result of unscreened pyroelectric charge being present over both waveguides. Moreoever, if the travelling-wave electrode were to cover only part of the width of its associated waveguide, it is likely that the switching voltage would be increased. our understanding of the origin of the improved temperature stability of device according to the invention is given below. Electrodes on the surface of a pyroelectric material give rise to local variations in any pyroelectric field produced. In devices made in z-cut LNB (but not generally in x-cut LNB) the electrodes are immediately over the waveguides, consequently the waveguides are likely to be subjected to the local variations in field associated with the presence of the electrodes. Where there is a symmetrical electrode arrangement, both waveguide portions experience similar variations in pyroelectric field as the temperature of the substrate varies. If there is a non-symmetrical electrode arrangement it is likely that the two waveguide portions will be subject to unequal pyroelectric fields as the temperature of the substrate varies. The imbalance in the pyroelectric fields results in a temperature induced shift of the electro-optic transfer characteristic and thus an increased temperature sensitivity. By uncovering part of the waveguide associated with the ground plane electrode, the field lines associated with the unscreened charge are caused to pass through the waveguide as they do through the waveguide associated with the other electrode. This contrasts with the situation in prior art devices , where the ground plane electrode covers and extends significantly beyond the edges of its associated waveguide, which results in the field lines associated with the unscreened pyroelectric charge and largely or wholly missing the waveguide.
Clearly the invention is applicable to any material which exhibits both the electro-optic effect and the pyroelectric effect and for which the electrodes are arranged generally to overlie the waveguides/waveguide portions, that is those in which the component of electric field normal to the substrate surface (the 'vertical' field) influences the refractive index of the waveguide. With x-cut LNB the usual electrode arrangement involves the electrodes lying adjacent rather than above the waveguides, since in the x-cut material it is the component of electric field parallel to the substrate surface which influences the refractive index of the waveguide. Generally temperature sensitivity ascribable to distortions of the pyroelectric field caused by unbalanced electrode dispostion are likely to be worst where there is a travelling-wave electrode arrangement and it is to such aplications that the present invention is particularly directed.

Claims

1. An electro-optic waveguide device comprising a travelling wave structure having a ground plane electrode, the ground plane electrode overlying an associated waveguide, characterised in that said associated waveguide has substantially constant width throughout that portion overlain by the ground plane electrode, and in that the ground plane electrode overlies less than the whole width of said associated waveguide throughout substantially the whole said portion.
2. A device as claimed in claim 1 wherein no part of the ground plane electrode overlies more than 90°/o of the width of said associated waveguide segment.
3. A device as claimed in claim 1 or claim 2 wherein the ground plane electrode overlies only 40 to 60°/o of the width of said associated waveguide throughout the portion overlain.
4. A device as claimed in any one of the preceding claims wherein the travelling-wave electrode overlies the full width of a second waveguide.
5. A device as claimed in any one of the preceding claims wherein the travelling-wave electrode is wider than the second waveguide.
6. A device as claimed in claim 5 wherein the portion of the travelling-wave electrode which overlies the second waveguide is between 10μm and 15ym wide, and the second waveguide is between 5 and l'Oμm wide
7. A device as claimed in any one of the preceding claims wherein the device is formed in a z-cut lithium niobate substrate.
8. A device as claimed in any one of the preceding claims wherein the device is an interferometer.
9. A device as claimed in any one of the claims 1 to 7 wherein the device is a directional coupler.
10. An electro-optic waveguide device having an asymmetric planar electrode structure, characterised in that the electrode of larger area overlies less than the whole width of its associated waveguide, whereby the sensivity of the device to pyroelecric fields is reduced.
11. An electro-optic device as claimed in claim 10 wherein said associated electrode has substantially constant width throughout that portion overlain by the electrode of larger area.
12. An electro-optic device as claimed in claim 10 or 11 wherein throughout that portion overlain said electrode overlies said associated waveguide by a substantially constant amount.
13. An electro-optic device as claimed in claim 12 wherein said electrode overlies said associated waveguide to between 30 percent and 70 percent.
PCT/GB1989/000565 1988-05-23 1989-05-23 Electro-optic device WO1989011676A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB888812180A GB8812180D0 (en) 1988-05-23 1988-05-23 Electro-optic device
GB8812180.1 1988-05-23

Publications (1)

Publication Number Publication Date
WO1989011676A1 true WO1989011676A1 (en) 1989-11-30

Family

ID=10637377

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/GB1989/000565 WO1989011676A1 (en) 1988-05-23 1989-05-23 Electro-optic device

Country Status (10)

Country Link
US (1) US5189713A (en)
EP (1) EP0343939B1 (en)
JP (1) JPH03504899A (en)
AT (1) ATE95616T1 (en)
AU (1) AU628822B2 (en)
CA (1) CA1320753C (en)
DE (1) DE68909675T2 (en)
ES (1) ES2045429T3 (en)
GB (1) GB8812180D0 (en)
WO (1) WO1989011676A1 (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5404412A (en) * 1991-12-27 1995-04-04 Fujitsu Limited Optical waveguide device
US5339369A (en) * 1992-10-23 1994-08-16 General Microwave Israel Corporation High-speed external modulator
US5455876A (en) * 1992-10-23 1995-10-03 General Microwave Israel Corporation High-speed external integrated optical modulator
JP3628342B2 (en) * 1993-09-17 2005-03-09 富士通株式会社 Dielectric optical waveguide device
JP2825056B2 (en) * 1994-02-24 1998-11-18 日本電気株式会社 Light control device
JPH07318986A (en) * 1994-05-25 1995-12-08 Nec Corp Waveguide type optical switch
WO1996002860A1 (en) * 1994-07-13 1996-02-01 General Microwave Israel Corporation High-speed external modulator
US5502781A (en) * 1995-01-25 1996-03-26 At&T Corp. Integrated optical devices utilizing magnetostrictively, electrostrictively or photostrictively induced stress
US5749132A (en) * 1995-08-30 1998-05-12 Ramar Corporation Method of fabrication an optical waveguide
EP0813092B1 (en) * 1996-06-14 2007-03-07 Sumitomo Osaka Cement Co., Ltd. Optical waveguide modulator with travelling-wave type electrodes
US5963034A (en) * 1996-09-19 1999-10-05 Ramar Corporation Electro-optic electromagnetic field sensor system with optical bias adjustment
US6128424A (en) * 1998-03-31 2000-10-03 Litton Systems Inc. Dual purpose input electrode structure for MIOCs (multi-function integrated optics chips)
US6372284B1 (en) 1998-06-11 2002-04-16 Optelecom, Inc. Fluoropolymer coating of lithium niobate integrated optical devices
US7224869B2 (en) * 2004-03-12 2007-05-29 United States Of America As Represented By The Secretary Of The Navy Low loss electrodes for electro-optic modulators
US7426326B2 (en) * 2004-03-12 2008-09-16 The United States Of America As Represented By The Secretary Of The Navy Low loss bridge electrode with rounded corners for electro-optic modulators
JP4789460B2 (en) * 2004-12-22 2011-10-12 株式会社アドバンテスト Optical switch and optical test equipment
US8217665B2 (en) * 2008-11-25 2012-07-10 Wisconsin Alumni Research Foundation Radio-frequency ion channel probe
TW201344285A (en) * 2012-04-26 2013-11-01 Hon Hai Prec Ind Co Ltd Electrooptical modulator
DE102022203109A1 (en) 2022-03-30 2023-10-05 Q.ant GmbH Photonic circuit

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2042212A (en) * 1979-02-15 1980-09-17 Carenco A Vice obtained by means of said method method for balancing an integrated optical device and a de

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2440265A1 (en) * 1978-11-04 1980-05-30 Hehl Karl REMOVABLE INJECTION UNIT FOR A MOLDING MACHINE FOR SYNTHETIC MATERIALS
FR2533714A1 (en) * 1982-09-28 1984-03-30 Thomson Csf NON-LINEAR INTEGRATED OPTICAL COUPLER DEVICE AND PARAMETRIC OSCILLATOR COMPRISING SUCH A DEVICE
FR2545947B1 (en) * 1983-05-10 1986-03-21 France Etat DIRECT ELECTRO-OPTICAL COUPLER WITH THREE ELECTRODES AND ALTERNATE PHASE
US4691984A (en) * 1985-09-26 1987-09-08 Trw Inc. Wavelength-independent polarization converter
GB2193337B (en) * 1986-07-30 1990-03-07 Gen Electric Plc Optical switch apparatus
GB8626152D0 (en) * 1986-11-01 1986-12-03 Plessey Co Plc Optical switch arrays
JP2928532B2 (en) * 1988-05-06 1999-08-03 株式会社日立製作所 Quantum interference optical device
US4940305A (en) * 1989-03-22 1990-07-10 The Boeing Company Optical switch based on 1×2 directional coupler

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2042212A (en) * 1979-02-15 1980-09-17 Carenco A Vice obtained by means of said method method for balancing an integrated optical device and a de

Also Published As

Publication number Publication date
CA1320753C (en) 1993-07-27
GB8812180D0 (en) 1988-06-29
EP0343939A1 (en) 1989-11-29
DE68909675T2 (en) 1994-04-28
AU3698289A (en) 1989-12-12
AU628822B2 (en) 1992-09-24
US5189713A (en) 1993-02-23
ATE95616T1 (en) 1993-10-15
ES2045429T3 (en) 1994-01-16
JPH03504899A (en) 1991-10-24
DE68909675D1 (en) 1993-11-11
EP0343939B1 (en) 1993-10-06

Similar Documents

Publication Publication Date Title
US5189713A (en) Electro-optic device
US4679893A (en) High switching frequency optical waveguide switch, modulator, and filter devices
US7088875B2 (en) Optical modulator
US5388170A (en) Electrooptic device structure and method for reducing thermal effects in optical waveguide modulators
CN111051970B (en) Light modulator
EP2133733B1 (en) Optical Modulator based on the electro-optic effect
US4645293A (en) Optical waveguide coupler having a grating electrode
WO2018136492A1 (en) Method and apparatus for phase-matched optical and rf wave propagations for semiconductor-based mzm modulators
EP0669546B1 (en) Waveguide-type optical device
US7035488B2 (en) Optical waveguide element
EP0153312B1 (en) Electro-optical filter device
CA2207712C (en) Optical waveguide device
US5801871A (en) Wide band and low driving voltage optical modulator with improved connector package
US7088874B2 (en) Electro-optic devices, including modulators and switches
JP3660529B2 (en) Optical waveguide device
US20220382118A1 (en) Optical modulator
WO2021201133A1 (en) Optical modulator
EP0152996A2 (en) Velocity matching apparatus
US6891982B2 (en) Optical modulation device having excellent electric characteristics by effectively restricting heat drift
US20230069468A1 (en) Optical waveguide element and optical modulation element
US20230057036A1 (en) Optical modulation element
JP2848455B2 (en) Waveguide type optical device
WO2021201131A1 (en) Electro-optical device
JPH063508B2 (en) Optical switch device
Pohlmann et al. High Speed Ti: LiNbO3interferometric Activated X-Switch: IAX

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AU JP US