WO1990006590A1

WO1990006590A1 - Improved installation for transport and processing under a pulsating double-floating condition

Info

Publication number: WO1990006590A1
Application number: PCT/NL1989/000092
Authority: WO
Inventors: Edward Bok; Ronald Johannes Wilhelmus Barlag
Original assignee: Edward Bok; Barlag Ronald Johannes Wilhelm
Priority date: 1988-12-01
Filing date: 1989-11-30
Publication date: 1990-06-14
Also published as: KR920700467A; JPH04503734A

Abstract

Installation (10) for processing of successive wafers (26) under pulsating double-floating condition within processing gaps (174) and (176) above and underneath such wafer of an at least almost entirely sealed-off processing chamber (24) by means of a reciprocating upper chamber wall (34) immediately above this wafer, and with wafer supply and discharge toward and from this chamber also under pulsating double-floating condition.

Description

Improved installation for transport and processing under a pulsating double-floating condition.

The invention relates to wafer transport and processing installations, with a pulsating double-floating condition for the wafer in the processing chamber.

In for instance the U.S. Patent No. 4.681.776 and the PCT Patent Application No. PCT/NL87/00003 of the applicants installations are described, whereby processing of a wafer in a processing chamber takes place under double-floating condition and with an immediate discharge of the supplied processing medium after such processing.

Thereby the following main disadvantages of these installations:

1. Because of the continuous discharge the consumption of processing medium is considerable;

2. By solely moving the processing medium in lateral direction along the wafer surface the processing efficiency is low;

3. In the central section of the processing gaps the processing efficiency is considerably higher than near the lateral outside of the wafer;

4. The required use of medium supply grooves in both upper and lower wall, extending in lateral direction from these supply channels toward close to the lateral outside of the wafer to maintain the floating condition, with locally at these grooves a reduced processing efficiency of the processing medium;

5. The use of medium supply channels in the vertical sidewall of the processing chamber for urging gaseous medium toward the wafer edge for a contact-free wafer processing and by means of wafer rotation a more uniform processing; and

6. A relatively high consumption of gaseous medium.

With the installation according to the invention it is intented to eliminate these disadvantages and is this installation mainly characterized by containing means for a during at least the main part of the wafer processing maintaining of a wafer floating condition in a thereby temporary at least almost sealed off processing chamber, with at least almost no discharge of the processing medium toward the circumferential discharge passage, located alongside this processing chamber.

In addition, that for that purpose a wall cf this processing chamber as central section of a chamber block is reciprocable over a small distance in up and downward direction under vibrating action, with during at least the wafer processing successive enlargements and narrowings of both processing gaps aside the wafer. Thereby such wall preferably is the upper wall of the processing chamber.

In addition, that as the processing chamber is located in between both chamber blocks, in a preferred embodiment in the bottom side of the upper chamber block a central recess as processing chamber is located, with a height thereof, that corresponds with the total of the wafer thickness and both heights of the upper and lower processing gap.

Furthermore, that a to a small extent flexible circumferential membrane section, located alongside the processing chamber, such central vibrator wall in lateral direction connects with an outer section of such chamber block and whereby at least part of the wall of such outer section functions as a seal wall, extending horizontally and in lateral direction.

Furthermore, that in the upper wall of the lower chamber block a circumferential recess is located alongside the processing chamber, which extends in downward direction over some distance under the creation of a circumferential discharge passage, with at least one medium discharge channel connected therewith, and whereby, as seen from the processing chamber, this discharge passage is located in lateral direction beyond this circumferential membrane section.

In that way the seal system for the processing chamber consists of at least two seal sections, extending in lateral direction, with an inner seal section located in between the outside of this membrane section and the circumferential discharge passage for during the processing at least temporarily sealing off this processing chamber, and a second seal section, located in lateral direction beyond this discharge passage, far sealing off the combination of processing chamber and discharge passage from the outer air.

The pulsating action of such chamber wall is very hefty, with as a result considerable differences in pressure in this chamber, wherein during the processing already an overpressure of the processing medium exists.

Furthermore, it is required, that during such wafer processing in this discharge passage a negative pressure is maintained far discharge of processing medium, possibly leaked from this chamber.

For the lining of at least the lower chamber block as top wall thereof synthetic material, such as tefon PFA or PTFE is used.

To restrict as much as possible the definite deformation of this lining, the thrust5in vertical direction on this block during the wafer processing have to be as small as possible.

Thus the overpressure in the thrust chamber underneath the lower chamber block or on top of the upper chamber block has to be a fraction higher than the maximum pressure of the processing medium in this processing chamber.

Consequently, it cannot be prevented, that during such processing processing medium from this chamber through at least one micro leak gap is urged toward this discharge passage.

Per high frequency vibration such discharge only has to amount 0,1 mm³ to within a second, due to the established considerable reduction in pressure in the processing chamber, create an unallowable disturbance of the unifmrm wafer processing.

In addition, it must be prevented, that processing contamination can enter a leak gap in between both chamber blocks in lateral direction beyond this discharge passage, with no possible total removal thereof.

Anotherfavourable characteric now is, that thereby in lateral direction beyond this discharge passage a circumferential gaseous lock compartment is located, wherein during the wafer processing in the processing chamber an overpressure of the gaseous medium is maintained with regard to the pressure in this processing chamber.

Furthermore, that thereby in between this discharge passage and this gaseous lock compartment a cylindrical sealing-off wall section of the upper chamber block corresponds with a sealing-off section of the lower chamber block, under the creation of a second seal section during the wafer processing.

Furthermore, that the upper wall of the lower chamber block extends in lateral direction beyond this gaseous lock compartment under the creation of a circumferential seal section, that corresponds with a seal section of the upper chamber block, with the establishing of a third circumferential seal section in between both chamber blocks during the wafer processing in the sealed-off chamber.

In that way, after the supply or replacement of processing medium with a too low pressure in the processing chamber, through at least one leak gap gaseous medium from the discharge passage is urged into this chamber, as during at least part of the wafer processing in this discharge passage an overpressure is maintained, that approximately is the same as that of the average overpressure of the medium in the processing chamber, wanted.

Furthermore it is accomplished, that during the processing during the de-compression stroke αf the vibrating wall gaseous medium through such leak gap enters the narrow exit section of the circumferential buffer chamber aside the membrane section and subsequently during the compression stroke of this wall due to the created overpressure in the processing chamber with regard to the pressure in the discharge passage, at first this gaseous medium is urged back from this exit section toward this discharge passage.

Furthermore, that at least during the wafer processing in the gaseous lock compartment an overpressure is maintained, that is higher than the pressure in the discharge passage.

Furthermore the installation is structured such, that by means of a pressure valve the overpressure of the medium in the discharge passage due to a possible leakage of gaseous medium from the gaseous lock compartment through at least one leak gap in the second seal section toward this discharge passage, cannot increase unallowably high.

By means of the overpressure in the gaseous lock compartment with regard to that in the discharge passage in that way a gaseous lock is created, preventing, that medium from this discharge passage can leak outward.

Furthermore, the overpressure of the medium in the gaseous lock compartment is higher than the atmospheric pressure outside the module, preventing this outer air to enter the seal in between both chamber blocks.

During the replacement of finished-off processing medium in the. processing chamber by new supplied processing medium ,with a discharge of this finished-off medium toward the discharge passage, in this passage temporarily a reduced pressure and possibly even a negative pressure is maintained.

In addition, if required, the overpressure of the medium in the thrust chamber underneath the lower chamber block is reduced to abolish the at least local urging of the lower chamber block against the upper chamber block at least in the end phase of the compression stroke.

In that way, in combination with a possibly increased pressure of the new suppled processing medium each time per low frequency vibration at least in the end phase of the compression stroke of the upper chamber wall the lower chamber block at least locally is moved downward over a mini distance, with the urging of the finished-off processing medium from the processing chamber toward the discharge passage.

Thereby simultaneously near the leak gap also a leak gap is created in between the gaseous lock compartment and this discharge passage, with also an urging of gaseous medium from this compartment toward this passage.

As a result, on the one side the gaseous lock is maintained, preventing processing medium to enter this leak gap,and on the other side by means of this gaseous medium, urged toward the top of this harrow discharge passage, efectively by means of the mini whirling action a removal of the liquid particles and therewith of even submicron contamination from the walls of this discharge Dassage is established. The non deformable metal core of the lower chamber block, on which the teflon lining is anchored, extends beyond the third seal section and so provides an almost entire carrying surface for this block.

In that way, the thrust of the thrust medium in the thrust chamber is uniformly distributed over the surface of the central section of the lower chamber block, with no locally unallawable deformations of this block.

As in addition, preferably before the central supply of new processing medium toward the processing chamber and/or at the end of the total wafer processing, the finished-off processing medium by means of an excess of centrally supplied gaseous rinse medium is expelled, by means of the simultaneously established pressure increase in the processing chamber in at least the end phase of the compression stroke the lower chamber block is displaced downward over a mini distance, with a total expulsion of the finished- off processing medium, with the liquid particles atomized in the gaseous medium, from this processing chamber.

Thereby simultaneously an excess of gaseous medium as rinse medium is urged from the gaseous lock compartment toward this discharge passage, with an ideal removal of the finished-off processing medium from this passage downward through the discharge channels, connected therewith.

By means of the pulsating action always only in this end phase of the compression stroke, approximately 1 0% of the pulse time, a main expulsion takes place, prouiding an ideal opportunity to refill the gaseous lock compartment and discharge the medium from the discharge passage in between.

As a result, the dimensions of this discharge passage and this gaseous lock compartment are extremely small, with during the wafer processing in the sealed off processing chamber a maximum sealing-off surface available, with no unallowable forces on both chamber blocks.

During the processing with the downward displacement of the upper chamber wall, especially processing medium is urged from the upper processing gap and whereby this medium is urged in downward direction through the processing gap aside the wafer edge toward the buffer compartment underneath the membrane section.

As thereby the upper section of the vertical sidewall of the processing chamber is rounded, the medium, expelled from the upper processing gap, is urged against the wafer edge and subsequently moved along this edge, and so at least assist in maintaining a physically contact-free mid position of the wafer in the processing chamber.

The lower chamber block through the preferrably compressable medium layer in the lower processing gap carries the wafer uniformly and contact free over its entire surface.

By means of the application of such compressible medium in the lower processing gap the wafer by means of the established vertical displacements of the upper chamber wall is also to a small extent reciprocably displaced, with consequently in the lower processing gap also the establishing of vertical flows of medium toward and from the wafer surface.

In that way ideally an all-sided processing, such as a cleaning, of the wafer is accomplished.

It is now also possible, that in the upper processing gap a processing with an aggressivemedium takes place, as for instance etching, developing and stripping, whereas simultaneously in the lower gap the lower side of the wafer is cleaned by means of for instance de-ionized water.

Instead of the supply of a combination of gaseous and liquid processing medium,it is also possible to supply a mixture of high and low boiling liquid and whereby, depending on the pressure and temperature of the bath,the quantity of vaporized medium is determined.

Furthermore, also only gaseous or vapor phase medium can be used.

It is of great importance to limit the amplitude of the vibrations of the chamber wall cts much as possible, because of:

1. to prevent too great thrusts on the teflon lining of the lower chamber block;

2. to restrict the top thrusts of the medium in the lower processing gap in downward direction onto the lower chamber block, to avoid the creation of a leak gap with the leaking away of the medium from the chamber; and

3. to avoid unallowable vibrations of the module itself.

Furthermore, for the optimal use of the vibration energy for in particular the urging of processing medium toward and from the wafer, it is desirable, that this vibrating wall is as close as possible to the wafer. Such also because of:

1. a maximum pressurized filling of both processing gaps;

2. a considerably reduced time for the wafer processing, also because of a high to very high frequency of the vibrations; and

3. no negative influence on the wafer processing due to wafer deformations.

Consequently, another favourable characteristic is, that this installation contains means for displacing the vibrating chamber wall over a distance, that is greater than that of the vibration amplitude.

A favourable method thereby is, that as a pressurized filling of the processing chamber has taken place with at least one medium and the lower chamber block has sealed off this chamber, a compression of at least the gaseous medium within this chamber takes place by means of the downward displacement of this vibrating upper chamber wall.

Furthermore, that during the wafer processing the reciprocating and vibrating upper chamber wall is brought to a changed position thereof in vertical direction to change the wafer processing.

Furthermore, that this installation contains means for a displacement of this upper chamber wall in vertical direction independent of the reciprocable vibrations thereof, established by this pulsator.

Furthermore, that thereby this thrust compartment is connected with a supply and discharge of medium and by means of regulating the pressure of the medium in this compartment, the height of this compartment is changeable and in this way the displacements of the pulsator, established therewith, provide successive vertical positions of the upper chamber wall.

Furthermore, that thereby the pressure of the medium in this thrust compartment at least jointly determines the average pressure of the processing medium in the processing chamber, wanted.

Furthermore, that thereby the pressure of the medium in the pulsator chamber at least jointly determines the average pressure of the processing- medium in the processing chamber, wanted.

Furthermore, that thereby during the wafer processing in the processing chamber automatically a parallel setting of the upper chamber wall with regard to the lower chamber wall is established.

Furthermore, that such parallelism is accomplished by means of the compressed medium within the pulsator chamber and the thrust compartment.

Furthermore, that thereby in between the top of the pulsator and the module housing a damper is located for the at least jointly damping of the vibrations of this pulsator.

Furthermore, that for that purpose the medium in both thrust compartment and pulsator chamber is a gaseous medium.

Furthermore, that this gaseous medium in the pulsator chamber also functions as coolant, with supply and discharge lines for this medium.

Furthermore, that this installation is configured that way, that the thrust compartment on top of the electric pulsator als functions as physical pulsator, with successive supplies and discharges of medium to reciprαcably displace this electric pulsator as lower wall thereof.

Furthermore, that thereby the frequency and amplitude modulation for the vibrations of the upper chamber wall consists of low, medium and high frequent vibrations, with respectively large, medium and small amplitudes, with a possible variation thereof.

Furthermore, that as an electric pulsator is used, its yoke is integrated with this upper chamber wall and this yoke by means of a supply of electric energy toward the pulsator at least jointly is brought toward a changed vertical position.

As this upper chamber wall immediately above the wafer reciprocably vibrates, in this way the already pressurized medium in the upper and lower processing gap is brought to a still higher average pressure, with consequently an increased action thereof on the wafer.

As a result, in this processing chamber top thrusts of the medium in downward direction on the lower chamber block are prevented, because the wafer per puls is urged downward by the compressed medium in the upper processing gap in a considerably shorter time, with a small downward displacement thereof and consequently a reduced compression of the medium in the lower processing gap.

By means of this pressurized filling the difference in downward thrust of the processing medium in the lower processing gap and the upward thrust of the thrust medium in the thrust chamber are greatly reduced, with the avoidance of unallowable deformation thrusts at the seal section for this processing chamber.

During the wafer processing in the extremely narrow processing gaps the supply of medium therein for replacement of the foregoing finished-off processing medium is not well possible because of the than required high supply pressure and velocity of the medium at the central orifices, with at these orifices a disturbtion of the uniform wafer processing.

By using this pressurized filling by means of the reduction of the volume of the processing chamber by displacing the upper chamber wall downward, such a central medium supply under high pressure no longer is required.

Furthermore, that by means of an increased pressure of the medium in the thrust compartment the upper chamber wall is displaced further downward to expel/replace the processing medium in both processing gaps.

In this way the lower chamber block by means of the increased pressure of the medium in the processing chamber is at least locally moved downward, with in that place an established discharge of processing medium from the chamber.

Such downward displacement of the lower chamber block can be supported by a simultaneous reduction of the upward thrust of the medium in the thrust chamber underneath this block.

In a following favourable method thereby the medium, expelled from the processing gaps, is urged through the relatively wide circumferential chamber compartment aside tihe wafer edge toward such local discharge gap.

Furthermore, that subsequently the reciprocating upper chamber wall is brought to a higher position for the central supply of replacement medium.

Furthermore, that thereby by means of a reduction of the pressure of the medium in the thrust chamber at least the first part of this supplied medium as rinse medium is expelled from these processing gaps through a created leak gap toward the circumferential discharge passage.

Furthermore, that after such filling of the processing gaps with new medium this upper wall again is brought toward its lower wafer processing position for a following similar wafer processing.

It is desirable, that the installation to an as small as possible extent is vibrating.

In a following favourable method for that purpose during the wafer transfer and/or wafer processing a number of variations in the vibration frequency follow up fast.

Furthermore, for removal of the submicron contamination from the submicron valleys in the wafer surface it is desirable, that in at least the upper processing gap a maximum cleaning action takes place on this wafer by means of maximum differences in pressure of the processing medium.

A following favourable characteristic is, that for that purpose during the processing the average height of the upper processing gap is that small, that the outer section of the wafer as seal wall seals off this gap in that way, that in this gap an almost individual processing takes place.

Furthermore, that by means of a central supply of medium toward the lower gap the average height of the upper processing gap is smaller than that of the lower gap during such maximum processing.

In combination with the lagging of the wafer in this way considerably greater differences in pressure take place in the upper processing gap than in the lower processing gap, without affecting the lower chamber block.

Furthermore, by means of the lagging effect of the wafer such difference in pressure in the upper processing gap during the compression stroke of the upper chamber wall is established in less than half of the total compression time.

The pressurized filling of the processing chamber now also enables the use of at least almost solely liquid processing medium.

Thereby in the upper processing position of the upper chamber wall the central injection of liquid medium in this upper gap.

Thereby such quantity of medium is expelled from the upper processing gap toward the discharge passage, that an at least almost entire filling of this gap with this liquid medium has taken place.

In a following favourable method during the upward expansion stroke of the upper chamber wall this wall is drawn upward that fast, that the wafer, due to its mass, remains behind, with the creation of even submicron vacuum bubbles in the liquid medium, which are also present within the submicron valleys of the wafer upper wall.

Furthermore, during the compression stroke the liquid medium under a high velocity is urged toward the wafer,at first still moving upward, with a hefty affecting of the boundary layer immediately above the wafer.

As a result, this micro boundary layer is dissolved and an expulsion αf medium, including eventual contaminiation, from the valleys takes place.

In the case of wafer cleaning in this way a very aggressive cleaning of the processing side of the wafer occurs.

As the processing pressures can be high, with corresponding high pressures of the thrust medium within the thrust chamber underneath the lower chamber block, the PFA seal- and membrane section of this block is reinforced with a woven layer of stretch-resistant thread.

The total volume of the processing mediums in both processing gaps is very restricted and amounts only 0,5 to 1 cm³ for a 6" wafer.

As for the wafer processing a replacement of this processing medium akes place a few times, the total consumption on medium and in particular on liquid medium is extremely low, which is of great importance with the application of explosive, poisonous and highly aggressive liquids.

The use of liquid thrust medium in the thrust chamber underneath the lower chamber block thereby enables the required vertical positions of this block as part of the wafer supply- and discharge system toward and from the processing chamber and for the wafer processing.

Due to the established spreading of the mixture of processing mediums in lateral and radial direction by means of the repeated compressing and expanding both processing gaps, in the upper and lower wall of the processing chamber no medium supply grooves, extending from the central orifices in lateral direction, have to be located.

In addition, the whether or not flat orienting side of the wafer has no negative effect on the double-floating condition and the contact-free wafer position in lateral direction and no additional thrust medium has to be ur ged toward the wafer to obtain an uniform wafer processing by means of wafer rotation.

The installation in addition contains means for displacing a wafer, to be processed, from a wafer sender under floating condition toward an at least almost centric position thereof with regard to the processing chamber.

In a following favourable configuration thereby the vertical sidewall of the processing chamber is used as wafer stop for in the end phase of the wafer displacement over the lower chamber block the establishing of this at least almost centric position.

Furthermore, that thereby for wafer transport at least the lower chamber block temporarily is brought to a sloped postion , whereby the wafer displacement at least jointly is established by means of the gravity force of the wafer.

Furthermore, that in at least the end phase of the wafer displacement toward this chamber the upper chamber wall vibrates, for slowing down the wafer velocity by means of established flows of medium in vertical direction toward and from the wafer.

Furthermore, that after the wafer processing the wafer under floating condition is moved over a sloped lower chamber block toward a wafer receiver.

The entrance and exit of the installation can be connected with any type of wafer supply, as for instance a cassette, cassette in a SMIF box, main processing module, modules for wafer handling, testing, measuring, inspection and any type of wafer-transfer, such as a robot.

Furthermore, that a common mounting block, on which the lower chamber blocks are mounted, together with a common upper chamber block form a tunnel, which on at least one side is sealable.

Furthermore, a combination of modules can be located in this tunnel.

Furthermore, such tunnel can be connected with the entrance-side of a high vacuum module, with a possible sealing-off of the tunnel at the entrance side of this installation.

Further favourable characteristics of the installation follow from the description of the Figures, described underneath.

Figure 1 is a transverse sectional view of the wafer transfer and processing installation according to the invention and wherein an electromagnet pulsator is located.

Figure 2 is the installation according to Figure 1 , with therein the location of a piezo pulsator.

Figure 3 is a sectional view over the line 3-3 of the installation ac cording to Figure 1.

Figure 4 is an enlarged sectional view of the processing chamber with its sealing-off structure and whereby the lower chamber block together with the wafer has arrived in its end phase of upward displacement and this wafer is brought in a double-floating condition.

Figure 5 is the sectional view according to Figure 4 in a sealed-off condition of the processing chamber.

Figures 6^A through 6^D show much enlarged a section of the processing chamber, whereby by means of at least gaseous medium wafer processing takes place, with an upward displacement of the upper chamber wall during the expansion stroke in successive phases thereof.

Figures 7 through 7 show the chamber according to the Figures 6 through 6 during the compression stroke of this upper chamber wall in successive phases thereof,

Figures 8^A through 8^C show very much enlarged a section of the chamber and the successive phases of processing according to the Figures 6 through

6^C.

Figures 9^A through 9^C show very much enlarged a section of the chamber and the successive processing phases according to the Figures 7^A through 7^C.

Figures 10^A through 10^E show the processing chamber according to Figure

8^C, with during the processing a continued downward displacement of the upper chamber wall during its upward expansion stroke.

Figures 11^A through 11^E show the processing chamber according to

Figures 10^A through 10^E during the compression stroke of this upper chamber wall.

Figures 12^A through 12^E show for the chamber according to Figure 11^E uccessive phases of the expansion stroke of this upper chamber wall.

Figures 13 through 13 show for the processing chamber according to the Figures 12^A through 12^E successive phases of the compression stroke of the upper chamber wall.

Figures 14^A and 14^B show the pressurized filling of the upper wafer processing gap of the installation according to Figure 1 with liquid medium.

Figures 15 ^A through 15^C show the wafer processing of the installation according to the Figures 14^A and 14^B, with successive downward positions of the upper chamber wall during its compression stroke,

Figures 16^A through 16^C show the successive wafer processings of the installation according to the Figures 15^A through 15^C during the compression stroke of this wall. Figures 17^A through 17^C show the pressurized filling of the upper processing gap of the installation according to Figure 1, with the combination of liquid and gaseous processing medium.

Figure 18 shows much enlarged the upper processing gap at the processing side of the wafer, with the urging of the liquid medium toward the wafer, as is indicated in the Figure 15^C.

Figure 18^B shows the gap section according to Figure 18^A with the urging of liquid medium from the wafer,

Figure 19^A shows the gap section according to Figure 18^A with the urging of the combination of gaseous and liquid medium toward the wafer.

Figure 19^B shows the gap section according to Figure 18^A with the withdrawal of the combination of gaseous and liquid medium from the wafer boundery layer.

Figures 20^A and 20^B show much enlarged a section of the processing chamber according to Figure 17^C in the start and end phase of the compression stroke of the upper chamber wall in a downward pressurized filling position thereof.

Figures 21^A and 21^B show the processing chamber according to Figures 20^A and 20^B in an upward pressurized filling position thereof.

Figure 22 is a much enlarged detail of the processing chamber during the wafer processing, with therein by means of the pulsating processing medium the urging of the excentrically positioned wafer toward a centric position thereof during the downward displacement of the upper chamber wall.

Figure 23 shows the detail according to Figure 22, with by means of the processing medium the urging of the excentrically positioned wafer toward a centric position thereof during the upward displacement of the upper chamber wall.

Figure 24 is an enlarged detail of the installation according to Figure 1 at the processing chamber with wafer supply from a transfer arm.

Figure 25 is the detail according to Figure 24 and whereby the front end of the wafer is swiveled upward by means of the gaseous cushion.

Figures 26^A and 26^B show much enlarged the supply passage toward the processing chamber at the membrane section, with therein the back end of the wafer still present during the upward expansion stroke of the downward compression stroke of the upper chamber wall.

Figure 27 shows much enlarged the front end of the processing chamber, with therein the upward displaced front end of the wafer.

Figure 28 shows the front end of the chamber according to Figurs 27, with the upward displaced wafer front end near the vertical side wall of the chamber as wafer stop.

Figure 29 is the detail according to Figure 24, with therein the established wafer stop within the processing chamber.

Figure 3D is the detail according to Figure 29, with the ending of the floating condition for the wafer for the downward displacement of the combination of block and wafer to its lowest transfer position.

Figure 31 is the installation according to Figure 1 in adapted form located at the entrance of a main processing module.

Figure 32 shows in a partial top view and longtitudinal sectional viewa modified embodiment of the installation according to Figure 2, with two processing modules located therein.

Figure 33 is a sectional view over the line 33-33 of the installation according to Figure 32.

Figures 34^A through 34^E show the installation according to Figure 32 in a horizontal longitudinal sectional view with successive horizontal wafer transfer positions during the wafer supply and discharge toward and from both processing chambers.

Figure 35 is de installation according to Figure 32 as connected with a main processing installation,with wafer processing under high vacuum, Figure 36 shows a longtitudinal sectional view of the installation according to Figure 1, with a sloped position thereof for wafer transfer toward and from the processing chamber.

Figures 37^A through 37^E show successive phases of the wafer transfer from the wafer transfer arm toward the processing chamber.

Figures 38^Aand 38^B show much enlarged the wafer in its end phase of displacement toward the vertical sidewall of the chamber during the downward compression stroke and upward expansion stroke of the pulsating upper chamber wall.

Figures 39^A through 39^E show successive phases of the wafer transfer from the processing chamber toward the transfer arm in its receiver position,

Figures 40^A and 40^B show much enlarged the effect of the pulsating upper chamber wall on the wafer during the start and end phase of this wafer transfer, with per puls a slowing down and acceleration thereof.

In Figures 1, 2 and 3 the wafer processing installation 10 is shown, consisting mainly of processing module 12, sender cassette 14, receiver cassette 16 and the wafer transfer unit 18.

The processing module mainly consists of the lower chamber block 2G, upper chamber block 22, processing chamber 24 in between for processing of the wafer 26, in the lower chamber block alongside the processing chamber the circumferential discharge passage 28 for discharge of the processing medium 30, tne gaseous lock compartment 48 alongside this passage 28, the pulsator 32 for the reciprocation of the central section 34 of the upper chamber block in up and downward direction and the thrust chamber 35 for an up and downward displacement of this lower chamber block.

The wafer transfer unit 18 for horizontal wafer transfer consists of the displacer 38, located in the support block 40, transfer arm 42 with the wafer hold block 44, chord 46 and two rolls for coupling this transfer arm with the piston 52, displaceable within the recess 54 of the support block 40.

The arm 42 is made of PFA and is reinforced with the metallic support 610. In addition, this arm with its extension 612 extends beyond block section 44 and whereby in this extension the roll unit 614 is located.

Thereby during the wafer transfer this roll-unit is displaced over the guide track 616 of the block 40, providing the correct take-over and transfer positions of the block 44 in vertical direction.

By means of vacuum thrust a wafer 26 from the sender cassette is suctioned onto the receiver section 66 of the block 44 for transfer thereof toward the processing module 12, whereas simultaneously a wafer 26' from the processing chamber 24 by means of a vacuum thrust is suctioned onto the wafer discharge section 68 of this block for transfer thereof toward the receiver casstette 16.

In the lower chamber block the central supply channel 70 for processing medium 30 is located, whereas in the upper chamber block 22 also the supply channel 72 far whether or not processing medium 30 or gaseous medium 78 or for both is located.

Furthermore, the supply lines 74 and 76 are connected with the gaseous lock compartment 48 for supply of gaseous medium 78,

These lines are connected with two compartments 618, located in the seal block 90

The lower chamber block 20 consists of the flexible bellow section 92 and the central section 88, whereby for this block and the upper chamber block 22 preferably teflon PFA, to a sufficient extent resistant to the processing medium, at least as a lining is used and whereby the lower end of the bellow section 92 airtight is mounted onto the support block 40, whereas the central section contains the non deformable metal core 88.

The enclosure ring 94 thereby provides both an air tight connection and an enclosure in lateral direction of this bellow section 92,

During the wafer processing with an accompanying increased pressure of the processing medium 30 in the chamber 24 and of the thrust medium 104 in the thrust chamber 36 this ring encloses this bellow section in upward direction.

The discharge passage 28 through a number of lines 120 is connected with the common discharge compartments 130, located in the seal block 90.

This block 90,with its extension 100, provides a guidance for the extension 102 of the lower chamber block 20.

The thrust medium 104, periodically urged toward and from this chamber 36, through the central supply channel 106 is brought into thrust compartment 108 and from there through grooves 110 into chamber 36.

In this way the total column of thrust medium 104 is over the entire circumference of the lower chamber block 20 available for urging it against the upper chamber block 22.

In the upper chamber block alongside the central recess as processing chamber 24 the circumferential recess 126 is located, with underneath the membrane section 128.

As a result, the central block section 34 to a small extent is reciprocably displaceable with regard to the outer section 132.

The PFA lining 622 as part of the central block section 34 als extends in lateral direction toward the lateral outside of this section 132 as wafer transfer- and seal wall and so uninterruptedly from the entrance side 298 toward the exit side 300 of the module 12.

wlithin the scope of the invention this lining can also consist of any other suitable material.

By means of a great number of mini dovetailed grooves 630 the PFA lining of the lower chamber block 20 is anchored onto the non deformable section 88.

The fabrication of this block takes place by means of a press-process, whereby the non deformable sections are brought in and subsequently the lining under high pressure and temperature is molded and anchored, whereafter a machining of this lining takes place toward its final shape.

within the scape of the invention any other manufacturing of the block, such as the appliance of the teflon onto the upper chamber block 22 by means of a spray process, and such whether or not in addition, is possible.

Also because of the small width of both discharge passage 28 and gaseous lock compartment 38, the contact surface between both chamber blocks 20 and 22 is relatively large. In addition, the central section of the lower chamber block 20 over almost its entire surface is carried by the non deformable section 95.

Consequently, the established difference in pressure between the thrust medium 104 in the chamber 36 and the processing medium 30 in the processing chamber 24 is spread over this contact surface, with no unallowable deformation of the thin walled teflon lining.

The PFA seal- and bellowsection 88/92 of the lower chamber black 20 is reinforced with a weven layer of strech resistant material.

In Figure 1 the electro magnet . pulsator 32 by means of the circumferential buffer block 666 and in between glue-connections is anchored against the bottom side of the upper cap 140, with the creation of a sealed-off thrust compartment 668.

Through nipple 682 this compartment 668 is connected with the supply line 690 for gaseous medium 78 and whereby in this line the regulator valve is located.

By means of regulating the supply and discharge of the gaseous medium 78 and its pressure, an adjustment of the pressurized filling of this compartment with this medium 7B is accomplished.

By adjusting the pressure of this medium the height of this compartment can be set from a minimum, preferably smaller than 0,1 mm, toward a maximum, larger than 0,2 mm.

In this way also the position in vertical direction of the stator 674 of the electromagnet pulsator 32 is adjustable and consequently the upper chamber block section 34, by means of a glue connection secured to the yoke 684 of this pulsator, with in between this stator and the yoke the mini gap 672.

To obtain the pressurized filling with processing medium, in the processing chamber to a wanted degree, with a sealed off chamber 24 by means of a supply of gaseous medium 78 toward this thrust compartment 668 the whether or not vibrating block section 34 as upper chamber wall is lowered.

The gaseous medium 78 within this compartment thereny in combination with the buffer block 666 also functions for damping the vibrations from this pulsator toward the module housing 4θ/l32.

The gaseous medium 78 in the pulsator chamber 142 has a pressure, that approximately corresponds with the pressure within the thrust compartment 668.

The average pressure in the extremely narrow gap 672 in between the stator 674 and the yoke 684 approximately corresponds with the pressure of the medium 78 within the thrust compartment 668 and immediately follows any change of this pressure.

The height of this gap 672 depends on the electric energy with regard to the difference between the positive and negative part of the alternating current, supplied by the modulator 632.

Thereby during the processing the height of this gap is approximately two times greater than the amplitude of this vibration.

In this way jointly by means of the pressurized medium 78 within this mini gap a pressurized filling of the processing chamber with medium 30 is made possible.

The medium 78 in the pulsator chamber 142 also functions as coolant for this pulsator and whereby by means of regulator valve 640 in the discharge line 688 the velocity of this medium, flowing through this chamber, is adjustable.

For that purpose, in the stator 674 the cooling channels 676 are located. By means of the medium 78 within the thrust compartment 668 and the chamber 142 and in particular within the cap 672, in combination with the recoprocation of the central block section 34 as upper chamber wall, this upper wall over its entire wafer surface is uniformly displaced downward, with over this wafer surface an at least approximately the same height of each of the processing gaps 174 and 176, see also Figure 5, as a requirement for a uniform processing of such wafer.

During the wafer processing in the sealed off processing chamber, with the establishing of a certain average processing pressure within this chamber, by means of sensor 636 impulses are forwardedtowards the regulator valve 436 in the supply line for the thrust chamber 36 for maintaining a sufficient high sealing-off pressure of the thrust medium 104 in this chamber.

Expulsion of processing medium 30 from the chamber 24 takes place by means of a continued supply of medium toward the thrust compartment 668, with consequently a downward displacement of the pulsator 32 and therewith of the upper chamber wall 34, with an established additional pressure increase of the processing medium 3D in this processing chamber.

Beyond a certain pressure in this chamber 24 at least locally a leak gap in between the blocks 20 and 22 is created, with a resultant expulsion of processing medium therethrough toward the discharge σassage 28.

Thereby, due to a continued downward displacement of the upper chamber wall 34, at the end an almost total expulsion of the processing medium from the processing chamber is established and for that purpose at least in the end phase of such downward displacement of this upper wall preferrably the amplitude of the vibrations is reduced.

Furthermore, it is also possible, that such expulsion of processing medium at least jointly takes place by means of an enlargement of the height of the mini gap 672 in between the stator and the yoke by a continued enlargement of the positive part of the alteranting current.

In Figure 2 the piezo pulsator 32' by means of the flexibele sleeve 666' is enclosed within the pulsator chamber 142', with in between the mounting block 692.

Thereby the creation of the sealed-off thrust compartment 668'.

By adjusting the pressure of the medium 78 for this compartment by means of valve 670 here too the height of this compartment is adjustable from minimum on and consequently through this piezo pulsator the position of the block section 34.

The pulsator chamber 142' is through a not indicated supply line connected with a regulator valve 638 and a discharge line, with a regulator valve 640 for gaseous coolant 78, and whereby in this piezo pulsator the cooling channels 694 are positioned.

Furthermore, the block section 34' is glued against the lower plate 696 of this pulsator, with in between the channels 698 for the coolant.

Here also, the at least jointly damping of the vibrations of this pulsator by means of the gaseous medium 78 within the compartment 668', and the therewith accomplished setting of the upper chamber wall 34 on a uniform distance toward the lower chamber block for a uniform wafer processing,

Such in particular, because the vibration amplitudes of the piezo pulsator are minimal, for instance only 5 μm with a frequency of 10000 Herz.

Furthermore, because for an effective wafer processing the upper processing gap 174 often must have a minimum height of less than 15 μm.

With the magnet, pulsator 32, due to the possible minimum heights of the gap 672, the hysteresis losses during the operation are minimal, also with a maximum downward displacement of the block section 34, with a considerable saving on electric energy for this pulsator.

Furthermore, in a following favourable method for an optimal wafer processing and the damping of the vibrations toward the module housing for both pulsators 32 and 32' a combination of at least two vibrations take place.

These series of vibrations, including low frequency vibrations, are accomplished by changing the positive and negative parts of the alternating current at a low frequency, for instance 1000 Herz. The medium sized frequency and amplitude of these vibrations are adjustable, whereby this second vibration functions as carrier vibration for the high frequency vibrations, super-imposed thereon, providing modulated vibrations for frequency and amplitude.

In Figure 2 the supply line 700 for processing medium 30/78 is shown. This module functions as an all-sided wafer cleaner, whereby such cleaning takes place under a pulsating double-floating condition.

Thereby, due to the small amount of medium, required for the upper processing gap, the inside diameter of this supply line is minimal, less than 0,2 mm, so thet this line to a sufficient extent is capillary to contain liquid medium 30.

Such also by means of the check-valve 702, located in this supply line immediately above the entrance 72.

Supply of gaseous medium 78 through valve 704 into this supply line enables the first pressurized filling of the processing chamber and this replacement of finished-off medium 30.

Subsequently, after such established pressurized filling at least jointly a first liquid medium 30 by means of the membrane pump 706 is urged into this supply line.

Thereby a relatively very limited supply , approximately 10 mm³ per second.

This medium 30, through the orifice 72 urged into the upper processing gap 174, thereby gradually expels the gaseous medium 78 from this cap in lateral direction toward the buffer compartment 184 aside de wafer edge.

During such injection of liquid medium 30, by means of the regulator valve 670 subsequently gaseous medium 78 is urged toward and from the thrust compartment 668', with an established additional vibration of the upper chamber wall at a low frequency, approximately 20 Herz and with a great amplitude, approximately 30 urn.

Due to the accomplished additional pressure increase in at least this upper gap 174, medium is expelled therefrom and gathered in the buffer compartment 184.

Beyond a maximum pressure of the medium in this compartment, which is determined by the upward thrust of the thrust medium 104 in the thrust compartment 35, the lower chamber black 20 at least locally is urged downward over a micro distance snd whereby medium from this buffer compartment through a than created leak gap is urged toward the discharge passage 28.

By means of such modulated vibration such discharge takes place often. After some time,thereby an at least total filling of this upper gap 174 with this liquid medium 30 has taken place, with as result the in Figures 15 and 16 shown medium flows and with an entering the buffer compartment 184 by this medium.

Medium 30 is also urged from this buffer compartment into the lower processing gap 175, with a mixing thereof with the gaseous medium 78, already present therein.

For replacement of this liquid medium,subsequently through both central orifices 70 and 72 a supply of gaseous medium 78 into both gaps takes placs, with a gradual urging therefrom jointly by means of a whether or not temporary reduction of the pressure of the medium 104 in the thrust chamber 36, through which already at a lower pressure of the medium in the processing chamber the lower chamber block is moved downward under the creation of a circumferential discharge gap.

After such expulsion of the medium 30, subsequently by means of the membrane pump 708 less aggressive liquid medium 30', as for instance de-ionized water, is injected into this supply line 700 and consequently through the orifice 72 into the upper processing gap 174.

The check-valves 710 and 712 thereby prevent the urging of this medium through the line section 716 in the direction of the supply 702 for the gaseous medium 78 and the supply 706 for the liquid medium 30.

Within the scope of the invention, instead of the supply of gaseous expulsion medium 78 into the upper gap 174, directly liquid medium 30' can be supplied into this gap for replacing the liquid medium 30.

In the Figures 6 and 7 the processing chamber 24 is much enlarged and in Figures 8 and 9 very much enlarged shown in detail.

Thereby the central block section 34 vibrates under a high frequency,

5000 Herz, with a small vibration amplitude, approximately 20 urn.

In Figures 6^A and 7^A, with a by means of the lower chamber block 20 sealed-off processing chamber 24,the upper chamber wall 34 by means of supply of medium into the thrust compartment 668 and the pulsator chamber

142 is moved downward from its upper wafer transfer position, see also Figures 8^A and 9^A.

In Figures 6^B and 7^B, see also Figures 8^B and 9^B, such pressurized filling of the processing chamber toward the wanted level has taken place.

In Figures 7^B and 9^B thereby the compression stroke and in Figures 6^B and 8^B tha expansion stroke of this upper chamber wall 34 is taking place.

During this compression stroke in the upper gap 174 highly pressurized processing medium 30 is urged toward the processing side 190 of the wafer 26, with simultaneously by means of the established downward displacement of this wafer an urging of medium 30 in the lower gap 176 toward the lower side 664 of this wafer.

Thereby also due to the lagging effect of the wafer in the start phase of the compression stroke, by means of the still upward displacing of this wafer within a short time a considerable increase of the pressure in the upper gap 174 takes place, see Figures 20^A and 21^A, with a resulting very hefty action of the processing medium on the wafer topography 190.

Furthermore, due to this lagging effect of the wafer in the start phase of the expansion stroke, with the still continued downward displacement of the wafer, within a short period of time a considerable decrease in pressure is taking place in this upper gap 174, with a resulting escape of medium from the micro boundary layer immediately above the wafer, see also

Figure 19^B.

Due to the minimum height of both processing gaps 174 and 176 during the processing, less than 50 μm, in combination with the high vibration frequency, during this wafer processing during the compression stroke the expulsion of medium from these gaps toward the compartment 184 aside the wafer edge and the buffer compartment 134 is very limited and takes place almost exclusively from the outer gap sections 652 and 654, as is shown in Figure 7^B.

During the expansion stroke medium under overpressure is urged from the buffer compartmens 134 and 184 back into these gap sections 652 and

654, as is shown in Figure 6^B.

In Figures 6 ^C and 7^C and much enlarged in Figures 8^C and 9^C the upper chamber wall 34 is moved further downward, with a still higher compression of the pressurized filling in the gaps 174 and 176.

Thereby a still heftier action of the vertical flows of medium 30 on the wafer walls 190 and 664 is taking place, with an entering of even the submicron valleys 192.

After the processing has taken place for a certain period of time, the upper chamber wall 34 is moved further downward, with due to the further diminution of both processing gaps,an increased pressure of the processing medium.

Consequently, at last the lower chamber block 20, its upper wall being parallel with this upper chamberwall 34, is urged downward under the creation of a circumferential discharge passage between this lower chamber block and the upper chamber block 22,and by means of the high frequency vibrations of the upper chamber wall a highly variable discharge of processing medium from the buffer compartment 184 therethrough is taking place, and which compartment is fed with expelled medium from these processing gaps. Such expulsion of processing medium toward the discharge passage can be supported by a temporary small discharge of thrust medium 104 from the thrust chamber 36, with an established decrease in pressure in this chamber.

Within a very short period of time, for instance only 0,05 second, thereby approximately 0,2 cm³ medium is expelled, with an established relatively considereble height of this circumferential discharge gap, approximately 10 urn.

By means of this expelling medium, at first an expulsion of residue medium, possibly containing micro contamination, is taking place from the cylindrical buffer compartment 134.

Simultaneously, gaseous rinse medium 78 is urged from the gaseous lock compartment 48 through a circumferential gap toward this discharge passage, with a discharge of the mixture from this discharge passage through the discharge lines.

A great number of successive up and downward displacements of this upper chamber wall thereby establish successive expulsions of continued cleaner medium from these processing gaps 174 and 176 toward this discharge passage 28.

In Figures 6 and 7 the upper chamber wall, by means of a pressure reduction in the thrust compartment 668 and the pulsator chamber 142, is moved upward again.

Subsequently, by means of new. supplied medium, the expulsion of residue medium from these gaps 174 and 176 toward the buffer compartments 184 and 134 and eventually the discharge passage 28 and a filling of these gaps with this fresh medium,is taking place.

Such expulsion, medium at first can be solely gaseous medium, with subsequently the injection of a certain amount of liquid medium into at least the upper gap 174, whereby this medium jointly by means of the vibrations is uniformly spread over such gap.

Thereupon, the wafer processing in the processing chamber 24 repeats with this fresh medium.

Such refreshment can thereby, due to the limited volume of the dischar- ged medium, repeatedly take place for an optimal processing.

In Figures 8^C and 9^C imaginary is shown, that for a wafer processing under an increased whirling action of the processing medium, the upper chamber wall is provided with a mini undulation, which within the scope of the invention can have any other profile. In Figures 10^A through 10^E and 11^A through 11^E such wafer processing, with a continuously further downward displacement of the block section 34, is subsequently shown.

In Figures 12^A through 12^E and 13^A through 13^E thereby the positive lagging effect of the wafer 25 on the high pressure wafer processing according to Figures 10 and 11 is shown.

Thereby, as shown in Figure 12^B, still at the start of the downward displacement of the block section 34, a continued upward displacement of the wafer 26, due to this lagging effect, through which in the upper processing gap 174 an increased pressurizing already in the first half of such compression stroke is reached.

By this, a shock-wave action of this medium occurs, with an increased action of it on the wafer topography 190, in particular in the second half of this compression stroke, see Figures 12^C, 12^D and 12^E.

In figure 12^F again expulsion takes place of the finished-off medium

30 from the processing gaps 174 and 176 by means of an increase of the pressure in the thrust compartment 668 and whether or not by means of discharge of thrust medium from the thrust chamber 36, through which the block

20 over a micro distance is displaced downward.

In Figures 13^A through 13^E the lagging effect of the wafer during the expansion stroke of block section 34 is shown.

Thereby at the start of this upward expansion stroke a still continued downward displacement of the wafer 26.

In Figures 14, 15, 16 and 18 wafer processing in the upper gap 174 at least almost solely takes place with liquid medium 658.

In Figure 14 for that purpose the supply of this liquid medium 658 takes place through the central orifice 72, whereas through the central orifice 70 the medium 30, consisting of gaseous medium and whether or not in combination with vaporized or liquid medium, is supplied toward the lower gap 176.

Within the scope of the invention any type of liquid medium for any type of wafer processing is possible, such as for cleaning, etching, stripping and developing.

The block section 34 thereby is in its upper position, with a minimal amplitude of the vibrations.

In Figure 14^B, with a stopped medium supply, and in at least almost the upper position of the lower chamber block 20, expulsion of the liquid medium 658 from the upper gap 174 takes place through the buffer compartments 184 and 134 toward the discharge passage 28, whereby also to a small extent the expulsion of processing medium from the lower gap 176 toward this discharge passage takes place.

In Figures 15 and 16 wafer processing with the mediums 658 and 30 takes place in the processing chamber 24, which by means of this lower chamber block is hermetically sealed off.

In Figure 15^A, during the compression stroke the block section is moving downward. Due to the relatively great mass of the wafer, it continues to move upward, because of the applied upward thrust of the medium 30 in the lower gap 176 thereon during the foregoing expansion stroke of this block section 34.

Due to this expansion stroke, thereby together with the fast upward displacement of the block section with regard to that of the wafer, in this upper gap 1 74 vacuum bubbles 660 are created.

Thus,at first, in gap 174 these vacuum bubbles are at least for the greater part disposed of, see Figure 15 . Thereby an urging of liquid particles under a relatively high pressure and velocity into the submicron valleys 192, which are located in the upper wall 190 of the wafer as wafer processing side, see also Figure 18^A.

In the end phase of the block displacement, as is shown in Figure 15^C, the wafer 26 is further moved downward by this block section and through the column liquid 658 in the upper gap, with a maximal compression of the compressible medium 30 in the lower gap 176.

This medium thereby functions as a buffer for absorbing and slowing down the established,relatively fast wafer displacement in downward direction.

In Figure 16^A, with the subsequent upward expansion stroke of the block section 34, at first still a continued downward displacement of the wafer takes place, because of the foregoing applied thrust of the medium 658 in downward direction thereon.

Due to the considerable tractive power of the pulsator on this block

34, the film liquid 658 is dissolved, under the creation of submicron vacuum bubbles, also within the valleys 192, see Figure 18^B .

The liquid medium 658 therefore has preferebly a low cohesion and adhesion coefficient.

Thus, an effective removal of the boundary layer 662 immediately above the wafer 26 occurs, see Figure 18^B.

In case of wafer cleaning .thereby an effective cleaning of such submicron valleys take place, whereby for instance during 1 second 5000-10000 repeats of such cleaning cycle occur. In particular, by means of the great amplitude, for instance 10 urn, of the pulsator vibrations, the established thrusts of the medium 658 on the wafer topography 190 are great, however, without any damage of the wafer, because through a micro gaseous cushion its entire lower wall is supported by the lower chamber block.

Due to the also established considerable vertical reciprocations of the wafer 26, thereby also in the lower gap 176 an effective processing of the lower side 664 of the wafer takes place.

Another favourable method of processing is shown in Figures 17, 19, 20 and 21,

After the central injection of liquid medium 658 into the upper gap 174, see Figure 17^A, the central block section 34 to a small extent is moved upward, see Figure 17^B.

By this, in particular during the upward expansion stroke of this block section,the suctioning of at least gaseous medium 78 from the buffer compartment 184 aside the wafer 26 takes place.

Within the scope of the invention also, and whether or not additionally, the injection of a small volume of gaseous medium, for instance 10 mm³, through the central supply orifice 72 can take place.

In this way, within the upper gap 174 a liquid-rich mixture is established.

Within the scope of the invention it is also possible to centrally supply such liquid-rich mixture.

After the subsequent downward displacement of the block section,the wafer Drocessing takes place within the hermetically sealed off chamber 24.

In Figures 20^A and 20^B thereby the phases of the compression stroke, with at first a still upward displacement of the wafer 26, are shown.

In the end phase of this compression stroke,here, too, a hefty action of the medium mixture 658/78 on the wafer upper .side 190 takes place.

Thereby, due to the hefty micro whirling action of this mixture, also an entering of even such submicron valleys 192 by this mixture,is accompushed, see Figure 19^A.

During the subsequent, not shown expansion stroke of the block section

34, due to the sharp pressure reduction in such submicron valleys, a partly expulsion of medium under whirling action occurs, see Figure 19^B ,

In the combination of Figures 20 and 21 is shown, that thereby during the wafer processing also the vertical position of the block section 34 can vary independent of its vibrations, for in particular an optimal cleaning of the submicron valleys. Within the scope of the invention any type of pulsator and any size of it, depending on the required vibration energy, are possible.

In Figure 24 the wafer 26 under floating condition is moved from the sender section 66 of the transfer block 44 in the direction of the processing chamber 24.

Thereby, for maintaining this floating condition, a supply of gaseous medium 78 through the supply orifices 70 and 74, located in the lower chamber block, takes place.

The flow of medium from the orifice is urged in sloped direction toward this wafer, thereby providing the small required thrust on this wafer in the direction of the wafer stop 556 in this chamber 24.

In the shown wafer position the sensor 554 has observed the passing of the wafer, and whereby by means of an impuls toward a valve in the supply line 70 the supply of medium in this end phase of wafer displacement is enlarged.

The back end 450 of the wafer thereby still is within the relatively narrow supply passage 55B, with due to the vibrating gaseous medium in the gap 454 above the wafer, still the maintaining of this floating condition for this wafer, see also Figures 26^A and 26^B,

Thereby, however, the front end 456 of the wafer, due to this upward thrust of the gaseous medium , is moved upward over a small distance, see Figures 25 and 27.

The vibrating upper chamber wall 34 thereby provides a whirling action of the gaseous medium 78 in the processing chamber, and in particular in the lower gap, with a uniform spreading of the medium over the wafer surface and a considerable slowing down effect of this medium on the wafer.

By means of successive supplies and discharges of a small amount of liquid thrust medium 104, approximately 3 cm³ , toward and from the thrust chamber 36, see Figure 1, thereby also the lower chamber block is reciprocated over a small distance, approximately 0,1 mm.

In addition, the upper chamber wall 34 is also reciprocated with a low frequency and a relatively great amplitude, approximately 0,1 mm.

Such is shown in Figures 26^A, 26^B, 27 and 28.

In Figure 26^A thereby an upward displacement of the upper chamber wall 34 and a downward displacement of the lower chamber block 20 take place, with an established negative pressure within the qaps 452 and 454, whereas in Figure 26^B, during the downward compression stroke of this upper chamber wall 34 and the upward displacement of the lower chamber block,a compression of this medium in these gaps occur. Consequently, for the wafer back end 450 a double-floating condition is temporarily maintained.

The wafer front end 456 thereby, however, is moved upward toward such level, that with a continued wafer displacement the wafer front side 562 comes to a stop against the vertical sidewall 556 of the processing chamber 24, as is shown in Figures 28 and 29.

The slowing-down action of the reciprocating flows of medium on the wafer thereby prevents the moving backward of the wafer over a distance more than 1 mm, and at the end this wafer comes to a rest position against this wall.

Thereby the lower section 570 of this sidewall 556 is conical for an eventual guidance of the wafer toward its position within this chamber.

Subsequently, the lower chamber block 20 is moved upward, as shown in Figure 30, with a centric position of the wafer within the chamber 24, whereafter the supply of medium 78 toward the lower chamber block is stopped, with a temporary dissolving of the floating condition for the wafer.

Subsequently, the combination of block 20 and wafer by means of a discharge of medium 104 from the chamber 36, is moved toward its lowest position, to enable the transfer block 44 to move toward its wafer receive position at the other side of the module.

In Figure 31 the wafer processing installation 10 with its exit 202 is connected with the main processing module 204. Thereby by means of the transfer arm 42 a processed wafer 26' is brought onto successive positions 206 on the turntable 208 within this module 204.

Thereby in this installation 10 an all-sided wafer cleaning takes place.

The same installation can also function for the post treatment of the wafer, such as cleaning, etching, stripping or developing, and whereby this wafer is supplied from such module 204, with the side 202 being the entrance side.

Furthermore, the sender cassette 14 can be part of a sealable transport box such as a SFIIF box, as imaginary shown.

In Figures 32 and 33 in the installation 210 in two in-line modules 212 and 214 wafer processing takes place,

Thereby this installation in addition consists of sender cassette 216, contained within the sealable box 218, and the receiver cassette 220, contained within the sealable box 222.

The combination of support plate 224 and the upper chamber block 226 provides the tunnel passage 228, extending from the entrance 230 with the in horizontal direction,

The arm 238 contains the arm section 242 with wafer suction section 244 for wafer supply toward the module 212, and section 246 for wafer discharge from this module toward module 214, and the arm section 248 with suction section 250 for discharge of the processed wafer 26" from this module 214 toward the cassette 220.

Furthermore, the structure of these modules is similar to that of the modules, as shown in Figures 1 and 2.

In Figures 34^A through 34^E successive linear displacement positions of the transfer arm 238 and the floating wafer transfer are shown.

In Figure 34^A wafer processing takes place in both modules 212 and 214, and whereby the transfer arm 238 is located in its receive—position 252.

After this processing, both lower chambsr blocks 254 and 256 of the modules 212 and 214 move downward toward their wafer transfer position,and simultaneously displacement of the wafers 26' and 26" takes place under floating condition over these blocks toward both sections 246 and 250 of the arm, as shown in Figure 34^B, and whereby subsequenly the three wafers 26, 26' and 26" are simultaneously suctioned onto these sections 244, 246 and 250.

Thereafter, both lower chamber blocks move further downward to their lowest position and subsequently the transfer arm 238,together with the three wafers, is moved over these blocks toward the transfer position 258, as shown in Figure 34^C.

After the subsequent displacement of both blocks 254 and 256 toward their wafer transfer position,by means of the dissolving of the vacume in the sections 242, 244 and 246, a transfer of the wafer 26" takes place toward the receiver cassette 218, and is a displacement of the wafers 26 and 26 ' taking place under floating condition over both blocks 254 and 256 to- ward the vertical sidewalls 556 of the processing chambers, see Figure 34^D.

Here, too, sensors have observed the displacement of the wafers 26 and 26' onto above both blocks 254 and 256, and after the arrival of these wafers in their centric position with regard to the chamber 24 these blocks, together with the wafers, are moved toward their lowest position.

Thereafter, the transfer arm 238 moves over these blocks backward toward its wafer receive-position 252, and whereafter in this position of this arm both blocks 254 and 256 are brought toward their upper processing position and processing of both wafers 26 and 26' can take place. Hereafter, the above described wafer transfer cycle repeats.

In Figure 35 this installation 210 is connected with the entrance 252 of module 264 for processing of the wafers 26 under high vacuum.

Here, successive transfers of the processed wafers 26" take place toward the successive positions 266 of the turntable 268.

Within the scope of the invention this module 264 can have any structure and method of processing.

The exit of this module 264 can possibly be the entrance 262, whereby in that case the installation 210 functions as post processing installation.

During the wafer processing under high vacuum,this module 264 by means of gate valve 270, displaceable in up and downward direction within wall recess 272 at the entrance 274, is hermetically sealed off, through which also the module 264 is sealed off from the outer air.

In Figure 36 the installation 10" is shown, wherein maibly use is made of the gravity force of the mass of the wafer 26 for its displacing under floating condition over the lower chamber block 20".

Thereby, at least at the side of the receiver cassette 16, displacers 518 are mounted, to provide a temporary sloped position of the installation from the wafer transfer postion toward the processing chamber 24.

In addition, the extension 102 of the block 20" is slightly displaceable in also transverde direction within the recess 526 of quide block 100, with the 0-rings 524 for centering of this extension.

In addition, the supply nipples 532, 534, 536 and 538 for the liquid medium 104 are included for supply of medium toward this recess 525.

The supply lines toward the nipples 532 and 536 through valve 542,and the supply lines toward the nipples 534 and 538 through valve 546, are connected with the exit side of the circulation pump 548, which is fed with medium 104 from the thrust chamber 36.

On command, by means of urging medium from this pump 548 toward the nipple groups 532/536 and 534/538, a sloped position of the block 20" is possible for such wafer transfer,

In Figure 37^A the lower chamber block 20" is in its wafer transfer position 550 and the transfer arm 44 in its wafer transfer position 520, whereby section 66 of this arm has released the wafer 26.

Thereby, whether or not simultaneously, by means of an impuls toward the displacers 518, the installation is brought to a sloped position.

Thereby in the start phase of the wafer transfer, by means of an impuls toward pump 548 and valve 546, supply of liquid medium 104 takes place to ward the nipples 534 and 538, through which a sloped position of this block 20" is accomplished with regard to the rest of the installation in support of such wafer displacement.

Furthermore, by means of supply of gaseous medium 78 toward channels 70 and 74, the wafer is brought to a floating condition and by means of the pulsator 32 the central block section 34 is vibrating.

In this Figure 37^A sensor 554 observes such wafer displacement toward beyond the transfer arm 44, and whereby this wafer then totally is arrived above the lower chamber block 20".

Thereby in the end phase of the wafer displacement, by means of an impuls from this sensor toward both valves 542 and 546, with medium supply toward the nipples 532 and 536, such sloped position of this block 20" is reversed, Figure 37^B.

The sloped position of the installation 10", however, exceeds this contra sloped position of the block 20", so that the wafer 26 continues its displacement over this block 20".

By means of this contra-sloped position of this block 20", the wafer comes to a rest position against the vertical sidewall 556 of the chamber

24, see Figure 37^B.

The end phase of such wafer displacement is much enlarged shown in Figures 38^A and 38^B.

Thereby in Figure 38^A, by means of the pulsating upper chamber wall 34, during the downward compression stroke, vertical flows of medium are urged toward the wafer. In addition, medium is urged from the chamber 24 along the wafer toward the transfer passage-sections 558 and 550.

Consequently, a considerable slowing down of the wafer is accomplished.

In Figure 38^B, during the upward expansion stroke of this wall 34, a negative pressure is created in the chamber 24, with suctioning of medium in particular from the transfer passage 560 through the still roomy opening 562.

Thereby the wafer to some degree seals off the transfer passage-section 556, through which the pressure in this section 558 is somewhat higher than in section 560.

Consequently, a resulting medium thrust on the wafer in direction of the chamber 24 is established.

Due to these successive slowing downs and propulsions of the wafer, per at least one low frequency puls such wafer to a small extent is displaced. At last, the wafer comes to a stop against the wall 556 .

The in Figures 24 through 30 described wafer displacements also make use of such slowing down system.

Afther a whether or not noticed arrival of the wafer in this centered position, subsequently the sloped position for the installation and the lower chamber block together with the floating condition of the wafer is ended, whereafter the combination of block and wafer is brought to its lowest position 554, and subsequently the transfer arm 44 is moved back over this combination toward its receive-position 565, see Figure 37^C.

Afther a whether or not noticed arrival of this arm 44 in this position 566, this combination of block and wafer is moved upward again, see Figure 37^D, with at the end its entering the upper wafer processing position 568, whereby the chamber is sealed off by this lower chamber block, Figure 37^E,

Thereafter, in this chamber the wafer processing cycle takes place.

After the wafer processing the combination of block 20" and processed wafer 26' is brought to its wafer transfer position 572, see Figure 39^A.

Subsequently, this installation is brought to a sloped position, with a displacement of this wafer 26' under floating condition toward the wafer receive-position 574, whereby in support medium is supplied into the channel 76,

Here, too, the maintaining of the vibrating action of the upper chamber wall 34, see Figures 40^A and 40^B, for a controlled, slow displacement of the wafer, whereby perlow frequency puls a greater propulsion force 576 than the opposite slowing down force 578,

Due to the small distance for the displacement, the required time for such displacement is limited to less than 1 second, with in Figures 39^C and

40^B the arrival of the wafer in its take-over position above the receiver section 68 of this arm 44, with a soft landing of the wafer against the wall 580 of this arm.

Subsequently, the wafer 26' is suctioned onto this section, Figure 39^C, and the block 20" is brought to its lowest wafer transfer position 564, see Figure 39^D. At the same time a wafer 26 is suctioned onto the receiver section 66,

Thereafter, the transfer arm 44 together with both wafers 26 and 26', is moved over the lower chamber block toward its wafer transfer position 552, Figure 39^E, with the transfer of the processed wafer 26' toward the receiver cassette 16 and transfer of the wafer 26 toward the lower chamber block 20", whereafter the above described wafer transfer cycle repeats.

Within the scape of the invention any other type and method of wafer transfer is possible.

Within the scope of the invention the installation can contain more than two in-line modules,with at least one combined wafer transfer arm.

Furthermore, in at least one of the walls of the processing chamber a heating element far for instance proximity- or de-hydration bake can be located.

Furthermore, such oven bake of the wafer can take place in successive modules, with a subsequent cooling-off in following modules.

Furthermore, in any of the shown processing modules of the installation and in a whether or not adapted form,the following wafer processings in whether or not a combination thereof can take place:

Bleaning, ultrasonic clsaning, megasonic cleaning, plasma cleaning;

developing:

etching, plasma etching;

stripping, plasma stripping;

oven bake, including microwave oven and hotplate oven bake;

dopant processing;

chemical vapor deposition;

physical vapor deposition, plasma deposition;

deposition of coatings in vapor or gaseous phase, vacuum deposition of primers in vapor phase;

oxidation systems; and

wafer testing, measuring, inspection and marking.

Thereby, for instance in a first module an all-sided cleaning of the wafer, and in a fallowing module proximity bake or even de-hydration baks of the wafer.

Furthermore, the pulsator can be arranged in a single or multiple version, whether or not located underneath the lower chamber block, and can have any size.

Furthermore, for such pulsator any type of material, as for instance for the electromagnet a metal alloy, such as ticonai, reco or alcino or a ceramic material, such as ferroxdure, can be used.

Furthermore, the yoke can whether or not be a permanent magnet.

Furthermore, this yoke in an enlarged configuration can be the upper chamber block.

Claims

C L A I M S

1. Installation for transfer and. processing of wafers, comprising: a) a processing module, at least comprising:

a lower chamber block;

an upper chamber block; and

in between said blocks a wafer processing chamber;

b) a wafer transfer device for supply of successive wafers toward said processing chamber;

c) a wafer transfer device for discharge of successive wafers from said processing chamber; and

means for during at least the wafer processing in said processing chamber by means of the reciprocation of a chamber wall a whether or not temporarily frequent variation of the height of said processing chamber.

2. Installation as defined in Claim 1, comprising means for at least temporary during the wafer processing in said processing chamber, sealed off from the outer air, maintaining a double-floating condition for said wafer .

3, Installation as defined in Claim 2, comprising means to maintain during the wafer processing said double-floating condition with at least temporary almost no supply of processing medium toward the upper processing gap above said wafer,

4, Installation as defined in Claim 3, comprising means to temporarily maintain in said processing chamber said double-floating condition without discharge of processing medium from said chamber toward a discharge.

5, Installation as defined in Claim 2, comprising means to have part of said wafer processing under double-floating condition taking place within a sealed-off processing chamber without supply of processing medium.

6. Installation as defined in Claim 1, comprising means to have in the wafer processing position of said chamber blocks a position of the upper chamber wall immediately above said wafer, with a height of the upper processing gap above said wafer during the wafer processing smaller than 0,1 mm.

7. Installationas defined in Claim 1, characterized, that the reciprocable central section of said chamber block through a circumferential membrane section alongside said processing chamber is connected with the outer section of said block.

3. Installation as defined in Claim 7, characterized by the location of said membrane section in said upper chamber block.

9. Installation as defined in Claim 7, comprising at least one pulsator for reciprocation of said central block section.

10. Installation as defined in Claim 9, wherein said pulsator is an electric magnet device.

11. Installation as defined in Claim 9, wherein said pulsator is a piezo device.

12. Installation as defined in Claim 9, wherein said pulsator comprises a compression/de-compression chamber, positioned aside said central block section, and includes means for urging thrust medium toward and from said compression/de-cαmpression chamber,

13, Installation as defined in Claim 12, wherein said pulsator comprises a combination of elements for the production of a combination of high- and low frequency vibrations.

14. Installation as defined in Claim 7, structured such, that at least part of the outer section of said block functions as a seal section for said processing chamber.

15. Installation as defined in Claim 14, wherein said pulsator is located within a pulsator chamber, sealed-off from the outer air.

16. Installation as defined in Claim 14, wherein the upper wall of said lower chamber block extends in lateral direction beyond said circumferential membrane section, with the creation of a circumferential seal section, wherein a recess is located, extending over some distance in downward direction under the creation of a discharge passage, on which at least one medium discharge line is connected and whereby said discharge passage is located in lateral direction beyond said membrane section.

17. Installation as defined in Claim 16, wherein in lateral direction beyond said discharge passage a gaseous lack compartment is located.

18. Installation as defined in 17, comprising such means, that in said compartment during the wafer processing in said processing chamber an overpressure of the medium, supplied therein, is maintained with regard to the pressure within said processing chamber.

19. Installation as defined in Claim 18, wherein in between said discharge passage and said gaseous lock compartment a circumferential seal section of the lower chamber block corresponds with a seal section of said upper chamber block for at least during the wafer processing aside a first sealing-off section in between said processing chamber and said discharge passage the establishing of a second sealing-off section.

20. Installation as defined in Claim 19, wherein said upper wall of said lower chamber block extends in lateral direction beyond said gasoous lock compartment, with the creation of a circumferential seal section, corresponding with a circumferential seal section of the upper chamber block and the creation of a third sealing-off section in between both chamber blocks during the processing within a sealed off processing chamber,

21, Installation as defined in Claim 20, comprising such means, that durinq part of the wafer processing in said discharge passage an overpresure is maintained, that approximately is the same as the average pressure of the processing medium in said processing chamber, wanted,

22, Installation as defined in Claim 21, comprising such means, that in between said circumferential membrane section and the other chamber block a mini buffer compartment is located, for at least part thereof functioning as a first gaseous lock to prevent, that processing medium, possibly containing submicron contamination, can escape from said processing chamber,

23, Installation as defined in Claim 21, comprising such means that at least during the wafer processing in said gaseous lock compartment an overpressure is maintained, that is greater than the pressure in said discharge passage, preventing, that during said wafer processing in said processing chamber medium from said discharge passage can escape in lateral outward direction,

24, Installationas defined in Claim 23, comprising such means, that the overpressure of the gaseous medium in said gaseous lock compartment is higher than the atmospheric pressure outside said module and during said wafer processing in said processing chamber a third gaseous lock is established between said gaseous lock compartment and the area outside said module, preventing the outer air to enter the seling-off section between both chamber blocks, without subsequently be expelled by the medium from said gaseous lock compartment.

25. Installation as defined in Claim 23, comprising such means, that during the replacement of finished-off processing medium in said processing chamber by new supplied processing medium, with a discharge of said finished off medium toward said discharge passage, in said passage at least a reduces pressure is maintained,

26. Installation as defined in Claim 17, wherein, as said lower chamber block at least jointly is made of flexibel material, said block at its lateral outside comprises a bellow section and the lower end air tightly is secured to the module housing, with the creation of a thrust chamber for displacing the upper section of said block in vertical direction by means of thrust medium, urged toward and from said thrust chamber,

27. Installation as defined in Claim 25, wherein, as thereby the central, non deformable section of said block is connected with this bellow section, this section consists of flexible synthetic material, such as teflon PFA, at least said section is reinforced with a wdven layer and said synthetic material as lining also covers the top of said non deformable central block section and by means of at least micro grooves is anchored thereto.

28. Installation as defined in Claim 27, wherein at least the bottom side of said upper chamber block whether or not locally is lined with synthetic material, such as teflon PFA, metal or other material, that does not generates contamination and is resistant against the processing medium, used.

29. Installation as defined in Claim 26, comprising such means, that liquid thrust medium is used for the vertical displacements of the upper section of said lower chamber block.

30. Installation as defined in Claim 29, comprising such means, that by means of a positive difference in pressure of the prαcsssing medium in said processing chamber with regard to the pressure of the thrust medium in said thrust chamber, at least temporary said lower chamber block at least locally is displaced downward over a mini distance, with the estabushed expulsion of the finished-off processing medium toward said discharge passage and thereby simultaneously near such leak.gap jointly a discharge gap is established in between, said gaseous lock compartment and said discharge passage, with jointly an urging of gaseous medium from said compartment toward said discharge passage.

31. Installation as defined in Claim 7, wherein in said central chamber block sections each a centrally situated supply channel for at least processing medium is located.

32. Installation as defined in Claim 31, comprising such means, that before the central supply of new processing medium toward said processing chamber and/or at the end of the total wafer processing, by means of an excess of centrally supplied gaseous rinse medium, finished-off processing medium is expelled toward said discharge passage and thereby simultaneously from said gaseous lock compartment an excess of gaseous medium as rinse medium is urged toward said discharge passage, with a removal of finished- off processing medium from this passage toward said discharge lines.

33. Installation as defined in one of foregoing Claims, comprising means for an independent of the reciprocations of said chamber wall, accomplished by said pulsator, displacement in vertical direction of said wall.

34. Installation as defined in Claim 33, comprising such means, that as a filling with medium of said processing chamber has taken place and said chamber at least almost is sealed off, a compression of at least the gaseous medium in said chamber takes place by means of a displacement of saiα vibrating chamber wall.

35. Installation as defined in Claim 33, wherein, as said pulsator is located in a pulsator chamber, on this chamber at least one channel for medium supply and discharge is connected and said installation comprises means to establish pressure differences in this chamber for an at least jointly establishing of the vertical displacements of said chamber wall.

36. Installation as defined in Claim 33, wherein part of said pulsator is an integrated part with said central reciprocable chamber block section, and such whether or not by means of a glued connection.

37. Installation as defined in Claim 33, wherein an end section of said pulsator by means of a circumferential buffer block is anchored against the module inner section, with the creation of a thrust compartment aside said pulsator, which is sealed off from the rest of this pulsator chamber,

38. Installation as defined in Claim 37, wherein said thrust compartment is connected with a supply and/or discharge line of medium and said installation comprises such means, that by adjusting the pressure of this medium in said thrust compartment thereby its height is adjustable and the displacements of said pulsator, accomplished therewith, provide successive vertical positions of said reciprocating chamber wall.

39. Installation as defined in Claim 38, comprising such means, that thereby the pressure of the medium in said thrust compartment at least jointly determines the average pressure of the processing medium within said processing chamber, wanted.

40. Installation as defined in Claim 39, comprising such means, that thereby the pressure of the medium in said pulsator chamber at least jointly determines the average pressure of the processing medium within said processing chamber, wanted,

41. Installation as defined in Claim 40, comprising such means, that the pressure of the medium in said pulsator chamber approximately corresponds with that of the medium in said thrust compartment.

42, Installation as defined in Claim 40, comprising such means, that during the wafer processing and medium discharge a parallel setting between both chamber walls is established.

43. Installation as defined in Claim 42, comprising such means, that such parallel settinα is established by means of the medium in said pulsator chamber and said thrust compartment.

44. Installation as defined in Claim 40, wherein in between said pulsator and said module housing a damping device is located for at least damping the pulsator vibrations.

45. Installation as defined in Claim 44, comprising such means, that therefore the medium in said thrust compartment is a gaseous medium.

46. Installation as defined in Claim 45, comprising such means, that the medium in said pulsator chamber also is a gaseous medium and jointly functions as coolant for said electric pulsator.

47. Installation as defined in Claim comprising such means , that the reciprocating displacements of said chamber wall are a combination of at least two vibrations, obtained by means of successive variations in the positive and negative parts αf the alternating current, to which said pulsator is connected.

48. Installation as defined in Claim 38, wherein said thrust compartment comprises such means, that this compartment also functions as physical pulsator, with successive supplies and discharges for the reciprocating displacement of said pulsator.

49. Installation as defined in Claim 48, comprising such means, that such frequency- and amplitude modulation for said vibrations of said chamber wall consists of low-, medium and high frequency vibrations with respectively great, medium and small amplitudes.

50. Installation as defined in one of foregoing Claims, comprising such means, that for at least part of the processing cycle of the wafer in said processing chamber at least gaseous processing medium is used.

51. Installation as defined in Claim 50, comprising such means, that thereby a layer of compressible medium in the lower processing gap as cushion uniformly supports the wafer over its entire bottom surface.

52. Installation as defined in Claim 50, comprising such means, that for at least part of the processing cycle a mixture of gaseous and liquid medium is used.

53. Installation as defined in Claim 50, comprising that means, that for at least part of the wafer processing cycle a mixture of gaseous and vaporized medium is used.

54. Installation as defined in Claim 50, comprising such means, that for at least part of the processing cycle a processing medium in vapor and liquid phase is used.

55. Installation as defined in Claim 50, comprising such means, that therein an all-sided cleaning of the wafer takes place.

56. Installation as defined in Claim 50, comprising such means, that in the upper processing gap processing of the upper wall αf tne wafer takes place with at least an aggessive medium, such as for etching, cleaning, developing and stripping αf this surface, and in tne lower processing gap by means of at least gaseous processing medium at least the floating condition for this wafer is maintained.

57. Installation as defined in Claim 50, comprising such means, that for the processing, expulsion and replacement of processing medium in both processing gaps by means of an increased pressure of the medium in said thrust compartment said vibrating chamber wall is displaced toward the other chamber wall,

58 . Installation as defined in Claim 57, comprising such means, that thereby by means of the increased pressure of the processing medium the non vibrating chamber block at leasttemporarily and locally is displaced, with the creation αf a discharge gap for discharge of procassing medium from said processing chamber toward said circumferential discharge passage.

59. Installation as defined in Claim 58, comprising such means, that after the expulsion of at least part of the processing medium from said processing chamber, subsequently said vibrating wall is moved for the central supply of replacement processing medium.

60. Installation as defined in Claim 59, comprising such means, that thereby whether or not by means of a temporary pressure decrease of the medium in said thrust chamber at least the first part of this supplied medium as rinse medium is expelled from these processing gaps through an accomplished discharge gap toward said discharge passage,

61. Installation as defined in Claim 60, comprising such means, that after such a refill of the processing gaps with new medium said vibrating wall is displaced toward the othe chamber wall for a following processing.

62. Installation as defined in Claim 50, comprising such means, that as the upper end of the vertical sidewall of said processing chamber at least is rounded, during the processing - with the compression stroke of the upper chamber wall, flows of processing medium are urged from the upper processing gap along the vertical chamber sidewall toward the wafer edge, with the creation of a circumferential buffer compartment alongside this wafer edge.

63. Installation as defined in Claim 62, comprising such means, that during the wafer processing the average height αf the upper processing gap is that small, that its outer section has such a great flow resistance for medium, that uithin this gap an almost independent processing takes place with only in the outer gap section as first buffer compartment a discharge of processing medium toward the second buffer compartment aside the wafer edge and oppositely a supply of processing medium from this second compartment toward this first buffer compartment.

64. Installation as defined in Claim 63, comprising such means, that at least temporary by means of a continuous central supply of medium toward the lower processing gap the average height of the upper processing gap is smaller than that of this lower gap.

65. Installation as defined in Claim 63, comprising such means, that for the wafer processing at least jointly use is made of the lagging effect of the fast reciprocating wafer.

65. Installation as defined in Claim 50, comprising such means, that for a certain wafer processing temporary the injection of solely liquid medium takes place into the upper processing gap.

67. Installation as defined in Claim 66, comprising such means, that during the upward expansion stroke of the upper chamber wall said wall is drawn upward that fast, that the wafer, due to its relatively great mass, remains behind, with the creation of vacuum bubbles in the liquid medium and by means of the exploding action of these bubbles a jointly removal of medium from the boundary layer immediately above the wafer takes place.

68. Installation as defined in Claim 67, comprising such means, that during the compression stroke of the upper chamber wall liquid medium particles under high velocity are urged toward the wafer, at first still moving upward, with jointly due to the imploding vacuum bubbles a hefty action of these liquid particles on this boundary layer and the wafer surface, including the valleys, located therein.

69. Installation as defined in Claim 66, comprising such means, that by means of a whether or not simultaneous injection of a small amount of gaseous medium,a liquid rich mixture is obtained.

70. Installation as defined in Claim 50, comprising such means, that at least temporarily during the wafer processing in the processing gaps a gradual replacement of the finished-off processing medium takes place by means of medium, centrally supplied into these gaps.

71. Installation as defined in Claim 70, comprising such means, that thereby a discharge of this finished-off processing medium takes place in lateral direction toward the circumferential buffer compartment aside the wafer edge for a whether or not uninterrupted further discharge toward said discharge passage.

72. Installation as defined in Claim 71 , comprising such means, that such replacament thereby at least temporarilycontinuous and at least almost uninterruptedly takes place.

73. Installation as defined in Claim 70, comprising such means, that during the wafer processing in at least the upper processing gap and at least temporary a gradual displacement of the finished-off processing medium takes place by new, centrally supplied medium of a following sort.

74. Installation as defined in Claim 73, comprising such means, that this new medium is a liquid medium.

75. Installation as defined in Claim 74, comprising such means, that for the lower processing gap replacement of the processing medium takes place with centrally supplied new gaseous medium.

76, Installation as defined in Clain 50, comprising such means, that as an electromagnet as pulsator is used, the slowing down of the upward displacement of the upper chamber wall at least jointly takes place by means of highly compressed medium within the mini gap in between the stator and the yoke.

77, Installation as defined in one of foregoing Claims, comprising such modulator, that therewith the frequency and amplitude of the alternating current are variable and frequency and amplitude modulation of these currents take place,

78, Installation as defined in Claim 50, comprising such means, that the supply of medium toward the upper processing gap is that minimal, that the supply line toward the central orifice has such a small inside diameter, that without expulsion forces, acting thereon, liquid processing medium capillary is contained therein.

79. Installation as defined in Claim 78, wherein this inside diameter αf this supply line is smaller than 0,2 mm.

80, Installation as defined in one of foregoing Claims, embodying a wafer transfer device, comprising:

a) a central wafer transfer section for a combination of horizontal and vertical wafer transfer toward and from said wafer processing chamber; b) a sender transfer section for horizontal wafer transfer from a wafer transfer unit toward said central transfer section; and

c) a receiver transfer section for a horizontal wafer transfer from said central transfer section toward a wafer take-over unit.

31. Installation as defined in Claim 80, wherein said central wafer transfer section comprises:

a) said lower chamber block; and

b) means for an at least in vertical direction displacement of said lower chamber block from the wafer take-over position toward the upper wafer processing position and back toward the wafer transfer position.

82. Installation as defined in Claim 81 , comprising means for, by means of a gaseous cushion in between said lower chamber block and said wafer, the achievement of a wafer slope upward in direction from said sender transfer unit toward said processing chamber, to provide a wafer stop against the vertical sidewall of said processing chamber in the end phase of the wafer displacement under floating condition over said lower chamber block toward said processing chamber.

83. Installation as defined in Claim 82, comprising such means, that said lower chamber block thereby at the circumferential membrane section at least jointly functions as swivel axis for said floating wafer.

84. Installation as defined in Claim 83, wherein the central supply channel for gaseous support medium in said lower chamber block is sloped in direction of the stop section of said vertical chamber sidewall, providing a flow of support medium for said wafer, which thereby, aside its propelling action, also exersises an upward thrust on said wafer.

85. Installation as defined in Claim 81, comprising means for providing a sloped position of the central section of said lower chamber bolck with regard to said upper chamber block, for in the end phase of the wafer displacement under floating condition the achieved resting of said wafer against the vertical sidewall of said processing chamber to accomplish a sufficient centric position of said wafer with regard to said processing chamber.

86. Installation as defined in Claim 85, comprising means for a displacement of said wafer under floating condition over said lower chamber block toward and from said processing chamber at least jointly by means of the gravity force of said wafer,

87. Installation as defined in Claim 86, comprising such means, that for that purpose a sloped position of at least said processing module is accomplished, with a slope from said sender transfer unit in ith wafer transfer position toward said processing chamber, and thereto at least one displacer is located in the lewer section of said installation,

88. Installation as defined in Claim 87, comprising such means, that thereby said sloped position of said central lower chamber block section temporary is opposite said sloped position of said module.

89. Installation as defined in Claim 88, comprising such means, that thereby the resulting sloped position of said lower chamber block section still is sloped in direction from said sender transfer unit toward said processing chamber.

90. Installation as defined in Claim 88, comprising means for temporary in at least the start phase αf the displacement of said wafer an accomplished additional sloped position of said central lower chamber block section in the same slops direction with regard to said upper chamber block for a temporary increase of the action by gravity force of the floating wafer at the start of its displacement,

91. Installation as defined in Claim 82, comprising such means, that by msans of gaseous medium from the central supply orifice in said lower chamber block jointly the displacement of said wafer under floating condition over said lower chamber block is accomplished.

92. Installation as defined in Claim 90, wherein said central lower chamber block section is extended in downward direction with an cylindrical guide section, located within a roomy recess of a guide block, secured to the module housing, and said installation comprising such means, that by means of a sloped position of said cylindrical guide section the sloped position of said central lower block section is accomplished,

93. Installation as defined in Claim 92, wherein for that purpose a number of supply channels for liquid medium, located in said guide block, are connected with its central recess, for urging this medium into said recess aside said guide section to provide a swivel of saide guide section.

94. Installation as defined in one of foregoing Claims, comprising such means, that at least temporary during the displacement of said wafer under floating condition over said lower chamber block, by means of said vibrating upper chamber wall reciprocating flows of medium toward and from said wafer exercise an at least slowing down action on said wafer.

95. Installation as defined in Claim 94, comprising such means, that the greater part of said wafer displacement over said lower chamber block takes place immediately underneath the recess of said upper chamber block, providing said processing chamber,

96. Installation as defined in Claim 95, comprising such means, that after the stop of said wafer against said vertical sidewall of said processing chamber, because of the reciprocating action of said upper chamber wall, said wafer finally over less than 0,3 mm is moved backward, with the creation of an at least almost centric position of said wafer with regard to said chamber.

97. Installation as defined in Claim 94, wherein in said lαwer chamber block alongside said central lower chamber wall section in its entrance and exit side a supply channel for supply of gaseous medium is located, for providing additional gaseous medium to support the floating condition of said wafer, and said channels discharge into said gaseous lock compartment.

98. Installation as defined in Claim 97, comprising such means, that thereby in the end phase of said wafer displacement toward said processing chamber, also medium supply takes place from said central orifice for medium in said upper chamber block toward said wafer.

99. Installation as defined in Claim 97, comprising such means, that thereby in the end phase of said wafer displacement toward said processing chamber said lower chamber block is also vibrating.

100. Installation as defined in Claim 81, wherein said wafer transfer unit comprises a wafer transfer arm with a wafer hold section for the transfer αf said wafer toward said lower chamber block, and said transfer section is characterized such, that in the wafer transfer position of said arm it is located aside said lower chamber block.

101. Installation as defined in Claim 100, wherein said receiver transfer unit comprises a wafer transfer arm with a wafer hold section for the transfer of said wafer from said lower chamber block, and said transfer unit is characterized such, that in the wafer take-over position of said arm it is located aside said lower chamber block.

102. Installation as defined in Claim 100, wherein said wafer hold section is a vacuum block for temporarily holding said wafer under vacuum force, with the vacuum orifice located in its top.

103. Installation as defined in Claim 100, wherein the drive mechanisms for the linear displacement of said sender and receiver transfer arms are located outside said processing module.

104. Installation as defined in Claim 103, wherein thereby the wafer transfer position of said sender transfer arm is located beyond said lower chamber block, and said installation comprising such means, that thereby said sender transfer arm with wafer hold section and including a wafer, is displaced from its wafer take-over position outside said lower chamber block at the entrance of said module over said lower chamber block, moved downward toward its free-passing position, toward said transfer position beyond said lower chamber block.

105. Installation as defined in Claim 104, wherein thereby the wafer take-over position of said receiver transfer arm is located in front of said lower chamber block and said installation comprising such means, that thereby said receiver transfer arm with hold section and including a processed wafer, is displaced from Said take-over position over said lower chamber block, moved downward toward its free-paasing position, toward its transfer position outside said lower chamber block at the exit side of said installation.

105. Installation as defined in Claim 105, wherein thereby said wafer transfer arm comprises a sender transfer arm section and a receiver transfer arm section and, as seen in direction of the horizontal wafer transfer, said sender wafer hold section and said receiver wafer hold section of said transfer arm are located on both sides of said arm, with a single drive mechanism for the linear displacement of said arm.

107. Installation as defined in Claim 106, wherein thereby tne wafer supply position of said transfer arm for receipt of a wafer from a wafer transfer device at the entrance side of said installation also is the takeover position of a wafer, processed in said processing chamber and displaced under floating condition over said lower chamber block toward said position,

108, Installation as defined in Claim 107, comprising such means, that the wafer transfer position of said transfer arm for transfer of the received and not yet processed wafer toward said lower chamber block for displacing tαward said processing chamber, is also the discharge position of said arm for transfer of the processed wafer toward the wafer take-over device at the exit side of said installation,

109. Installation as defined in Claim 108, comprising such means, that after the arrival of said wafer in its centric position with regard to said processing chamber, the combination of lower chamber block and wafer is moved downward toward its free position for the return of said transfer arm over said combination toward its wafer take-over position at the entrance side of said installation, and after such displacement of said arm said combination is moved upward toward its processing position.

110. Installation as defined in Claim 109, comprising such means, that after the wafer processing said combination of lower chamber block and wafer is moved downward toward the wafer transfer position for linear wafer displacement over said lower chamber block toward said transfer arm.

111. Installation as defined in Claim 110, comprising such means, that thereby flows of medium, urged by said reciprocating upper chamber wall in vertical direction toward and from said wafer, accomplish a reduced velocity of said wafer.

112. Installation as defined in Claim 111, comprising such means, that after arrival of the processed wafer in its take-over position above said transfer arm, the combination αf lower chamber block and wafer is moved downward, suctioning of the processed wafer and the wafer to be processed takes place onto said transfer arm, subsequently said block is moved further downward toward its free-passing position, whereafter said arm, together with said wafers, is moved over said lower chamber block toward its wafer transfer position and subsequently, by dissolving the vacuum, tranfer of said processed wafer takes placs toward a take-over device, and after moving upward of said lower chamber block toward its take-over position, a transfer of said wafer, to be processed, takes place toward said block.

113. Installation as defined in one of foregoing Claims, wherein multiple processing modules are arranged.

114. Installation as defined in Claim 113, wherein for it least two processing modules a single, common wafer transfer device is used.

115. Installation as defined in Claim 113, wherein a single wafer transfer arm is used for at least two modules and whereby said arm consists of a first arm section, with a wafer supply- and discharge section on both sides, and a second arm section, with only a wafer discharge section, and such configuration repeats for following modules.

116. Installation as defined in Claim 115, comprising such means, that thereby,simultaneously with the first discharge section the suctioning of a wafer, processed in the first module, and with the second discharge section suctioning of a second wafer, processed in the second module, takes place.

117. Installation as defined in Claim 113, wherein thereby the lower chamber blacks of these modules are mounted onto a common support block, and in between said support block and the common upper chamber block a wafer transfer tunnel is arranged for linear displacement of the wafer transfer arms within an individual environment.

118. Installation as defined in Claim 117, comprising such means, that said tunnel is sealable on at least one side.

119. Installation as defined in Claim 113, comprising such means, that in a first processing module by means of at least liquid medium a wafer processing, such as cleaning, etching, developing or stripping takes place, and in a following module processing takes place by means of medium in gaseous and/or vapor phase, such as cleaning, drying, proximity bake or dehydration bake.

120. Installation as defined in one of foregoing Claims, comprising such means, that said installation in a whether or not adapted configuration at its entrance- and/or exit side interfaces with one of the following wafer transfer- and wafer take-over devices:

wafer cassette, SMIF box with wafer cassette, main processing moduls, including high vacuum module, module for testing, inspection, measuring, marking or handling and another wafer transfer device, such as a wafer transfer robot.

121. Installation as defined in Claim 120, comprising such means, that therein at least one of the following processings in whether or not combination takes place:

cleaning, ultrasonic cleaning, megasonic cleaning, plasma cleaning; etching, plasma etching, reactive ion plasma etching, magnetron ion etching, sputter etching;

developing;

stripping, plama stripping;

dopant processing;

various types of lithography, including the appliance of coatings; chemical vepor deposition, CVD epitaxial, under low or high pressure; CVD deposition of nitride, oxide or polysilicone;

physical vapor deposition, electron beam deposition, ion beam deposition, plasma deposition;

high temperature evaporation systems;

deposition of coatings in vapor or gaseous phase, vacuum deposition of primers in vapor phase; and

oven bake, including micro-wave and hot-plate, proximity bake and dehydration bake.

122. Method for installation as defined in Claim 1, wherein during the wafer processing within a processing chamber by means of the reciprocation of a chamber wall a whether or not temporarily frequent variation of the height of said processing chamber is accomplished.

123. Method as set forth in Claim 122, wherein at least temporary during the wafer processing in said processing chamber, sealed off from the outer air, a double-floating condition for said wafer is maintained.

124. Method as set forth in Claim 123, wherein in said processing chamber said double-floating condition temporarily is maintained without discharge of processing medium from said chamber toward a discharge.

125. Method as set forth in Claim 122, wherein part of said wafer processing under double-floating condition takes place within a sealed-off processing chamber without supply of processing medium.

126. method as set forth in Claim 122, wherein in wafer processing position of said chamber blocks a position of said upper chamber wall immediately above said wafer is maintained, with a height of the upper processing gap during part of the wafer processing, smaller than 0,1 mm.

127. Method as set forth in Claim 122, wherein the central section of said chamber block through a circumferential membrane section alongside said processing chamber is connected with the outer section of said block, and said central block section is reciprocated.

128. Method as set forth in Claim 127, wherein by means of at least an electric pulsator during the processing said central block section at least temporarily is reciprocating.

129. Method as set forth in Claim 127, wherein said reciprocation of said chamber wall is accomplished by means of thrust medium, urged toward and from a compression/de-compression chamber, located aside said chamber wall.

130. Method as set forth in Claim 129, wherein by means of a plurality of pulsators a combination of high- and low frequency reciprocations of said chamber wall is accomplished.

131. Method as set forth in Claim 127, wherein during the wafer processing at least part of the outer section of said chamber block functions as a seal section for said processing chamber.

132. Method as set forth in Claim 131, wherein during the wafer processing at least temporary a discharge of processing medium takes place from said processing chamber toward a discharge passage, located in the upper wall of said lower chamber block outside said seal section.

133. Method as set forth in Claim 132, wherein, as in lateral direction beyond said discharge passage a gaseous lock compartment is located, a sealing off of the combination of processing chamber and discharge passage is accomplished by means of a circumferential seal section of said lower chamber block, located in between said discharge passage and said gassous lock compartment, and corresponding with a seal section of said upper chamber block.

134. Method as set forth in Claim 133, wherein thereby during the wafer processing in a sealed-off processing chamber, the sealing off of the combination of said processing chamber, said discharge passage and said gaseous lock compartment takes place by means of a third sealing-off section in between said chamber blocks in lateral direction beyond said gaseous lock compartment,

135. Method as set forth in Claim 134, wherein during at least part of said wafer processing in said dischargs passage an overpressure is maintained, which approximately is the same as the average pressure of the processing medium in said processing chamber, wanted, and in said gaseous lock compartment an overpressure is maintained, that is higher than this overpressurs in said discharge passage, preventing the escape of medium from said discharge passage in lateral direction outward during said wafer processing.

135. Method as set forth in Claim 135, wherein during the replacement of finished-off processing medium in said processing chamber by new supplieo processing medium, with a discharqe of said finished-off medium toward said discharge passage, therein an at least reduced pressure is maintained.

137. Method as set forth in Claim 133, wherein for the vertical displacements of the non reciprocating chamber block liquid medium is urged toward and from a thrust chamber aside said chamber block.

133. Method as set forth in Claim 137, wherein above a certain positive difference in pressure of the processing medium in said processing chamber with regard to the pressure of the thrust medium in said thrust chamber, said chamber block at least temporary and locally is displaced over a mini distance, with the accomplished expulsion of the finished-off processing medium toward said discharge passage, and thereby simultaneously near such leak gap also a discharge gap is accomplished in between said gaseous lock comparmment and said discharge passage, with also the urging of gaseous medium from said compartment toward said discharge passage.

139. Method as set forth in Claim 138, wherein thereby, before the central supply of new processing medium toward said processing chamber and/or at the end of the total wafer processing, finishsd- off processing medium by means of an excess of centrally supplied gaseous rinse medium is expelled through an accomplished leak gap toward said discharge passage and thereby simultaneously an excess of gaseous medium as rinse medium is urged from said gaseous lock compartment toward said discharge passage, with a removal of finished-off processing medium from said discharge passage toward discharge lines, connected with said passage.

140. Method as set forth in one of foregoing Claims, wherein thereby said reciprocating chamber wall, independent of the vibrations, accomplished by means of said pulsator, is displaceable in vertical direction.

141. Method as set forth in Claim 140, wherein, as a filling of said processing chamber has taken place with at least one medium and said chamat least almost is sealed off, a compression of at least the gaseous part of said medium takes place by means of an accomplished displacement of said reciprocating chamber wall toward the other chamber wall.

142. Method as set forth in Claim 141, wherein, as said pulsator is located within a pulsator chamber, accomplished pressure differences of the medium in this chamber at least jointly accomplish these vertical displacements of said reciprocating chamber wall.

143. Method as set forth in Claim 140, wherein, as said pulsator by means of a circumferential buffer block air tight is secured against the module housing under the creation of a thrust compartment between said housing and said pulsator, by adjusting the pressure of the medium within said thrust compartment, its height is adjustable, and the displacements of said pulsator, accomplished therewith, provide successive vertical positions of said chamber wall.

144. Method as set forth in Claim 143, wherein thereby the pressure of the medium in said thrust compartment, in combination with the pressure of the medium in said pulsator chamber, determine the average pressure of the processing medium in said processing chamber, wanted.

145. Method as set forth in Claim 144, wherein thereby the pressure of the medium in said pulsator chamber approximately corresponds with that in said thrust compartment.

146. Method as set forth in Claim 145, wherein thereby by means of the medium in said pulsator chamber and said thrust compartment automatically a parallel setting of said rsciprocating chamber wall is accomplished with regard to the other chamber wall.

147. Method as set forth in Claim 142, wherein thereby by means of successive supplies and discharges of medium toward and from said thrust compartment, said compartment at least jointly functions as physical pulsator, for reciprocation of said pulsator under low frequency and great amplitude.

148. Method as set forth in Claim 146, wherein thereby by means of gaseous medium in said thrust compartment an at least jointly damping of the pulsator vibrations is accomplished.

149. Method as set forth in Claim 147, wherein thereby the frequency and amplitude modulation for the vibrations of said chamber wall consist of low, medium and high frequency vibrations, with respectively great, medium and small amplitude.

150. Method as set forth in one of foregoing Claims, wherein for at least part of the processing cycle of said wafer in said processing chamber at least gaseous processing medium is used, and thereby a layer of compressible medium in the lower processing gap as cushion supports said wafer uniformly over its entire bottom surface.

151. Method as set forth in Claim 150, wherein thereby for at least part of said wafer processing a mixture of gaseous and vaporized medium is used.

152. Method as set forth in Claim 150, wherein thereby for at least part of said wafer processing a mixture of gaseous and liquid medium is used.

153. Method as set forth in Claim 150, wherein thereby for at least part of the processing cycle a processing medium in vapor and liquid phase is used.

154. Method as set forth in Claim 150, wherein thereby in said processing chamber an all-side cleaning of said wafer takes place,

155. Method as set forth in Claim 150, wherein thereby in the upper processing gap processing αf the upper wall of said wafer takes place by means of at least an aggressivemedium, as for instance for cleaning, etching, developing or stripping αf this surface.

156. Method as set forth in Claim 150, wherein thereby by means of a further pressure increase of the medium in said thrust compartment said processing chamber is narrowed, with a more intensive processing or discharge/replacement of processing medium,

157. Method as set forth in Claim 156, wherein thereby by means of the increased pressure of the processing medium the non vibrating chamber block at least temporarily and locally is displaced, with the creation of a discharge gap for discharge of processing medium from said processing chamber toward said discharge passage,

158. Method as set forth in Claim 157, wherein thereby after the expulsion of at least part of the processing medium from said processing chamber, subsequently said vibrating chamber wall is displaced from the btheAchamber wall, for the central supply of replacement processing medium,

159. Method as set forth in Claim 150, wherein thereby during the processing, with the compression stroke of the upper chamber wall, flows of processing medium are urged from the upper processing gap along the vertical chamber sidewall toward the wafer edge, with the creation of a circumferential buffer compartment alongside this wafer edge,

160. Method as set forth in Claim 159, wherein during the wafer processing the average height of the upper processing gap is that small, that its outer section has such a great flow resistance for medium, that within this gap an almost independent processing takes place, with only in the outer gap section as first buffer compartment a discharge of processing medium toward the second buffer compartment aside the wafer edge, and oppositely, a supply of processing medium from said second compartment into said first buffer compartment.

161. Method as sat forth in Claim 150, wherein thereby at least temporary, by means of a continuous central supply of msdium toward the lower processing gap, the average height of the upper processing gap is smaller than the average height of this lower gap.

162. Method as set forth in Claim 160, wherein thereby for the wafer processing at least jointly use is made of the lagging effect of ths fast reciprocating wafer.

163. Method as set forth in Claim 160, wherein thereby for a certain wafer processing temporary the injection of only liquid medium takes place into the upper processing gap.

164. Method as set forth in Claim 163, wherein during the upward expansion stroke of the upper chamber wall, said wall is drawn upward that fast, that said wafer, due to its relatively great mass, stays behind, with the creation of vacuum bubbles in the atomized medium, and by means of the exploding action of said bubbles a jointly removal of medium from the boundary layer immediately above the wafer takes place, and during the compression stroke of said upper chamber wall the atomized liquid particles under high velocity are urged toward said wafer, at first still moving upward, with, jointly, due to the imploding vacuum bubbles, a hefty action of these liquid particles on said boundary layer and the wafer surface, including the valleys, located therein.

165. Method as set forth in Claim 150, wherein thereby at least temporary during the wafer processing in the processing gaps a gradual replacement of the finished-off processing medium takes place by means of medium, centrally injected therein, and the discharge of finished-off processing medium in lateral direction toward the buffer compartment aside the wafer edge takes place for a whether or not interrupted further discharge toward said discharge passage.

166. Method as set forth in Claim 165, wherein thereby such replacement at least temporarily continuous and at least almost uninterruptedly takes place.

167. Method as set forth in Claim 165, wherein thereby during the wafer processing in at lsast the upper processing gap, and at least temporary, a gradual replacement of the finished-off processing medium takes place by new, centrally supplied medium of a following type.

168. Method as set forth in Claim 150, whsrein, as an electromagnet as pulsator is used, the slowing down of the upward displacement of the upper chamber wall at least jointly takes place by means of highly compressed medium within the mini gap in betwaen the stator and the yαke.

169. Method as set forth in one of foregoing Claims, wherein by means of a central wafer transfer device, located within said wafer procsssing module, a combination of horizontal and vertical transfer of said wafer takes place toward and from said processing chamber.

170. Method as set forth in Claim 169, wherein thereby a wafer transfer takes place from a wafer transfer unit toward said central transfer device, and from there toward a wafer take-over unit.

171. Method as set forth in Claim 169, wherein said lower chamber block is displaced upward from its wafer take-over position toward its upper wafer processing position and back toward its wafer transfer position.

172. Method as set forth in Claim 171, wherein by means of a gaseous cushion in between said lower chamber block and said wafer a wafer slope upuard in direction from said sender transfsr unit toward said processing chamber is accomplished, providing a wafer stop against the vertical side- wall of said processing chamber in the end phase of the wafer displacement under floating condition over said lower chamber block toward said processing chamber.

173. Method as set forth in Claim 172, wherein said lower chamber block thereby at the circumferential membrane section at least jointly functions as swivel axis for said floating wafer.

174. Method as set forth in Claim 173, wherein a flow of medium from the central supply channel in said lower chamber block, said channel sloped in direction of the stop section of said vertical chambsr wall, is directed toward said wafer, providing thereby, aside its propelling action, an upward thrust on said wafer,

175. Method as set forth in Claim 169, wherein a sloped position of the central section of said lower chamber block is accomplished with regard to said upper chamber block, for in the end phase αf the displacement of said wafer under floating condition the provision of a stop of said wafer against the vertical sidewall of said processing chamber, thereby accomplishing a sufficient centric position of said wafer with regard to said processing chamber.

176. Method as set forth in Claim 175, wherein said displacement of said wafer under floating condition over said lower chamber block toward and from said processing chamber, due to a temporarily sloped module, is at least jointly accomplished by means of the gravity force of said wafer.

177. Method as set forth in Claim 176, wherein said sloped position of said lower chamber block section temporary is opposite said sloped position of said module,

178. Method as set forth in Claim 177, wherein temporary in at least the start phase of the displacement of said wafer an accomplished additional sloped position of said central lower chamber block section in the same slope direction with regara to said upper chamber block, provides a temporary increase of the action by gravity force on the floating wafer at tha start of its displacement.

179. Method as set forth in one of foregoing Claims, wherein at least temporaly during the displacement of said wafer under floating condition over said lower chamber block, by means of said vibrating upper chamber wall accomplished reciprocating flows αf medium toward and from said wafer exercise an at least slowing down action on said wafer.

180. Method as set forth in Claim 179, wherein the greater part of said wafer displacement over said lαwer chamber block takes place immediately underneath the processing chamber recess in said upper chamber block.

181. Method as set forth in Claim 180, wherein thereby after the stop of said wafer against the vertical sidewall of said processing chamber, due to the pulsating action of said upper chamber wall, said wafer finally is moved back over less than 0,3 mm, with the achievement of an at least almost centric position of said wafer with regard to said processing chamber,

182. Method as set forth in Claim 180, wherein a flow of gaseous medium from a supply orifice in said gaseous lock compartment provides assistance in maintaining the floating condition for said wafer, displacing toward said processing chamber, and a flow of gaseous medium from another supply oifice in said gaseous lock compartment provides assistance in maintaining the floating condition for said wafer, displacing from said processing chamber.

183. Method as set forth in Claim 182, wherein thereby in the end phase of the displacement of said wafer toward said processing chamber also a supply of medium takes place from the central orifice for medium in said upper chamber block.

184. Method as set forth in Claim 182, wherein thereby in the end phase of said wafer displacement toward said processing chamber said lower chamber block is also under vibrating action.

185. Method as set forth in Claim 170, wherein, as said sender transfer unit comprises a wafer transfer arm with hold section for wafer transfer toward said lower chamber block as part of said central wafer transfer device, said arm in its wafer transfer position is located asids said lower chamber block.

186, Method as set forth in Claim 185, wherein, as said receiver transfer unit comprises a wafer transfer arm with hold section for wafer transfer from said lower chamber block, said arm in its wafer take-over position is located aside said lower chamber block.

187. Method as set forth in Claim 186, wherein, as thereby the wafer transfer position of said sender transfer arm is located beyond said lower chamber block, said sender transfer arm with wafer hold section and including a wafer, is displaced from its wafer take-over position outside said lower chamber block at the entrance side of said module over said lower chamber block, moved downward toward its free-passing position, toward said transfer position at the other side of said module.

188. Method as set forth in Claim 187, wherein, as thereby the wafer take-over position of said receiver transfer arm is located at the entrance side of said installation, said receiver transfer arm with hold section and including a processed wafer, is displaced from said take-over position αver said lower chamber block, moved downward toward its free-passing position, toward its transfer position at the exit side of said installation.

189. Method as set forth in Claim 188, as thereby said wafer transfer arm comprises a sender transfer arm section and a receiver transfer arm section and, as seen in direction of the horizontal wafer transfer, said sender wafer hold section and said receiver wafer hold section of said transfer arm are located on both sides of said arm, with a single drive mechanism for the linear displacement of said arm, the wafer supply position of said transfer arm for receipt of a wafer from a wafer transfer device at the entrance side of said installation also is the take-over position of a wafer, processed in said processing chamber and diplaced under floating condition over said lower chamber block toward said position, whereas the wafer transfer position of said transfer arm for transfer of the received and not yet processed wafer toward said lower chamber block for displacing toward said processing chamber, is also the discharge position of said arm for transfer of the processed wafer toward the wafer take- over device at the exit side of said installation.

190. Method as set forth in Claim 189, wherein, after the arrival of said wafer in its centric position with regard to said processing chamber, the combination of lower chamber block and wafer is moved downward toward its free-passing position^ for the return of said transfer arm over said combination toward its wafer take-over position at the entrance side of said installation, and after such displacement of said arm, said combination is moved upward toward its processing position.

191. Method as set forth in Claim 190, wherein thereby after the wafer processing said combination of lαwer chamber block and wafer is moved downward toward the wafer transfer position for linear wafer displacement over said lower chamber block toward said transfer arm after arrival of the processed wafer in its take-over position above said transfer arm, the combination of lower chamber block and wafer is moved downward and suctioning of the wafer and the wafer, to be processed, takes place onto said transfer arm, subsequently said block is moved further downward toward its free-passing position, whereafter said arm, together with said wafers, is moved over said lower chamber block toward its wafer transfer position, subsequently, by dissolving the vacuum, transfer of said processed wafer takes place toward a take-over device, and after moving upward of said lower chamber block toward its take-over position, a transfer of said wafer, to be processed, takes place toward said block.

192. Method as set forth in one of foregoing Claims, as multiple processing module are arranged within a tunnel, wafer transfer between modules takes place by means of a common transfer device.

193. Method as set forth in Claim 192, wherein, as a single transfer arm is used for at least two modules, whereby said arm comprises a first arm section, with a wafer supply- and discharge section on both sides, and a second arm section, with only a wafer discharge section, and such configuration repeats for following modules, simultaneously with the first discharge section the suctioning of a wafer, processed in said first module, and with the second discharge section suctioning of a second wafer, processed in the second module, takes place.

194. Method as set forth in Claim 193, wherein thereby in a first processing module by means of at least liquid medium a wafer processing, such as cleaning, etching, developing or stripping takes place, and in a following module processing takes place by means of medium in gaseous and/or vapor phase, such as cleaning, drying, proximity bake or de-hydration bake.

195. Method as set forth in one of foregoing Claims, wherein in said installation at least one of the following processings, in whether or not a combination, takes place:

developing;

stripping, plasma stripping;

dopant processing;

various types of lithography, including the appliance of coatings;

chemical vapor deposition, CVD epitaxial, under low or high pressure; CVD deposition of nitride, oxide or polysilicone;

high temperature evaporation systems;

oven bake, including micro-wave and hot plate, proximity bake and dehydration bake.

196. Method as set forth in Claim 195, wherein it also comprises the interface with the following wafer transfer and take-over devices:

wafer cassette, SMIF box with wafer cassette, main wafer processing module, including high vacuum module, module for testing, marking, measuring or handling and a wafer transfer device, such as a wafer transfer robot.