WO1992015124A1

WO1992015124A1 - Low-loss dielectric resonant devices

Info

Publication number: WO1992015124A1
Application number: PCT/US1992/001228
Authority: WO
Inventors: Karl Brommer; Henry Mullaney; Robert Meade; Andrew Rappe; John Joanopoulos
Original assignee: Massachusetts Institute Of Technology; Lockheed, Sanders, Inc.
Priority date: 1991-02-15
Filing date: 1992-02-13
Publication date: 1992-09-03
Also published as: US5471180A; US5389943A; US5187461A; AU1435192A

Abstract

A dielectric resonator comprising a resonant defect structure (38) disposed in a lattice structure formed of a plurality of multi-dimensional periodically arranged dielectric elements (30) confines electromagnetic energy within a frequency band in the photonic band gap. The frequency band of the confined electromagnetic energy is tunable. The unique structure of the dielectric resonator (29) leads to reduced power dissipation losses when used in microwave and millimeter wave components. Accordingly, the dielectric resonator may be used to produce high quality resonant cavities, filters and power generators.

Description

O -LOSS DIELECTRIC RESONANT DEVICES

BACKGROUND

Resonant cavities form an essential part of many microwave components including filters, waveguides, couplers and power combiners. A typical dielectric resonator for a microwave integrated circuit comprises a metallic box enclosing a disk of dielectric material deposited on a substrate with a much smaller dielectric constant. Dielectric materials are favored for most microwave applications because the high-dielectric constants available through some materials make compact circuit components possible.

These compact micowave components, however, are realized at the cost of power dissapation. Practical microwave integrated circuits are lossy compared to metallic resonant cavities, suffering power losses through the following two principle mechanisms. Since practical dielectrics are far from lossless, power is dissipated through the induced polarization of the dielectric material in a time-harmonic electric field. Also, practical dielectrics do not completely confine electromagnetic radiation, so a conductive metallic shielding surrounds the resonator to reduce radiation losses. The shield has a non-zero resistivity which results in oh ic power dissipation.

SUMMARY OF THE INVENTION

It is known that: a three-dimensional periodic dielectric structure naving the proper symmetry can perfectly reflect incident electromagnetic radiation, incident from any orientation, within a frequency band producing a photonic band gap. Thus, electromagnetic energy at frequencies within the band gap is prohibited from propagating through the structure. In accordance with the present invention, a dielectric resonator comprises a resonant defect structure positioned in a lattice structure formed of a plurality of multi¬ dimensional periodically related dielectric elements which are disposed in a dielectric background material. The resonant structure confines electromagnetic energy within a frequency band in the photonic band gap. The photonic band gap is preferably within a frequency range of 1-3000 GHZ. More specifically, electromagnetic energy having frequencies near the resonant frequency of the defect structure is stored within the resonant structure. Significantly, a dielectric resonator that employs this unique structure provides a reduced power dissipation over conventional devices, leading to more effecient performance.^'

The dielectric resonator lattice structure has a preferred diamond crystal symmetry, although any face- centered cubic lattice arrangement may be used. The periodically related dielectric elements may comprise overlapping spheres or disks of a high-dielectric material. Since the elements overlap, the background material may comprise air or an equivalent low-dielectric materical. Alternatively, the dielectric elements may be spherical or disk-shaped regions of air or an equivalent low-dielectric material positioned in a high-dielectric background material. In either case, the resonant defect structure is positioned in the lattice structure creating a resonant defect within the resonator. The resonant defect structure may comprise air or a dielectric material. Further, a coupling means may be coupled to the resonant cavity. The coupling means may comprise a first wave¬ guide for coupling electromagnetic energy to the resonant structure and a second waveguide for coupling electro¬ magnetic energy out of the resonant structure.

By positioning the defect structure in the di¬ electric resonator, electromagnetic energy in a narrow frequency band within the photon band gap propagating through the resonator is coupled into the defect structure. Once inside the defect structure, this energy remains trapped. Since the resonant frequency of the defect structure corresponds to the center frequency of the frequency band of the stored energy, the frequency band may be tuned during construction of the resonator. Course tuning may be accomplished by choosing a diamond lattice constant which centers the photonic band gap on the desired resonant frequency. Fine tuning may be accomplished by changing the size of the defect structure. Additionally, a fabricated resonator may be tuned by magnetizing the dielectric background material. More specifically, the magnetized background material effectively shifts the entire frequency band of stored electromagnetic energy.

The present invention also comprises two methods for manufacturing a dielectric resonator. One method is directed toward manufacturing a resonant structure comprised of a plurality of periodically related air spheres or disks in a high-dielectric backing material. The other method is for manufacturing a dielectric resonator comprising overlapping periodically related high-dielectric spheres or disks in a low-dielectric environment.

In accordance with another embodiment of the present invention, a dielectric structure comprises a lattice structure having a plurality of elongated elements formed of a low-dielectric material arranged in a two- dimensional periodic relationship in a high-dielectric background material. The elongated elements extend through the background material in a direction transverse to the direction of propagating electromagnetic energy. The dielectric structure reflects substantially all of the incident electromagnetic energy within a frequency band thereby producing a photonic band gap. Electromagnetic energy at frequencies within the band gap is prevented from propagating through the structure. A resonant defect structure is formed in the lattice structure. The defect structure provides a frequency range within the band gap in which electromagnetic energy having frequencies within the range propagates through the lattice structure.

The lattice structure has a preferred triangular lattice symmetry in a plane transverse to a longitudinal axis through an elongated element. The elements may be cylindrical or substantially cylindrical in shape and are preferably filled with air.

Further, the dielectric structure may be positioned within a waveguide. An input end of the waveguide couples incoming electromagnetic energy to the dielectric structure and an output end of the waveguide couples narrow band electromagnetic energy from the structure. By positioning the dielectric structure in the waveguide, the resulting device may be used as a dielectric re¬ sonator or a narrow band pass filter in accordance with the present invention. The resulting device has an extremely broad operating frequency range. In fact, the photonic band gap of the device may be adjusted over a frequency range of 10 6 to 1015 Az.

Although localized electromagnetic energy in a narrow freqency band is common in metallic cavities, narrow frequency band electromagnetic energy stored within an entirely dielectric medium is a novel phenomenon. To that end, the present invention exploits this effect to provide high quality resonant cavities, filters, resonant absorbers and power generators in the microwave and millimeter wave regions.

DETAILED DESCRIPTION OF THE DRAWINGS

In the enclosed drawings like reference characters refer to the same parts throughout the different views. The drawings are not necessarily to scale, emphasis instead being placed upon illustrating the principles of the present invention.

FIG. 1 is a schematic illustration of a three- dimensional diamond crystal lattice structure.

FIG.s 2A-2C are perspective views of three- dimensional dielectric resonators in accordance with the present invention.

FIG. 3 is a graph showing the relationship between resonant frequency and defect radius. FIG. 4 is a graph showing the relationship between the density of states and frequency.

FIG. 5 is a perspective view illustrating a di¬ electric resonator having coupling means coupled to the resonant cavity.

FIG. 6A is a plan view of the periodic pattern of elements for two representative sheets which are assembled to form a dielectric resonator.

FIG. 6B is a plan view of a sheet illustrating the coupling means.

FIG. 6C is a plan view illustrating the arrangement of the sheets in manufacturing a dielectric resonator. FIG. 7A is a cross-sectional view of an assembled dielectric resonator.

FIG. 7B is an alternative cross-sectional view of an assembled dielectric resonator.

FIG. 8 is a perspective view illustrating a three- dimensional dielectric resonant cavity constructed from a dielectric resonator.

FIG. 9 is a perspective view illustrating a three- dimensional dielectric bandpass filter.

FIG. 10A is a perspective view illustrating a dielectric absorber.

FIG. 10B shows a representative structure in which the dielectric absorber of FIG. 10A is positioned.

FIG. 11 is a perspective view illustrating a di¬ electric power generator.

FIG. 12 shows the decay of the localized electro¬ magnetic field near the defect structure.

FIG. 13 is a perspective view illustrating a two- dimensional periodic dielectric structure in accordance with another embodiment of the invention. -7 -

FIG. 14 is a plan view of the dielectric structure of FIG. 13 illustrating the two-dimensional periodic arrangement of elements formed within a background material.

FIG. 15 is a graph showing the relationship between attenuation and frequency for the structure of Figure 14.

FIG. 16 is a graph showing the relationship between photonic band gap size and the radius of elements for the structure of Figure 14..

FIG.s 17A-17C is a plan view flow sequence for a method of manufacturing a two-dimensional periodic dielectric structure.

FIG. 18 is a perspective view of dielectric resonant device employing the dielectric structure of the present invention.

FIG. 19 is a perspective view of a band pass filter employing the dielectric structure of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In accordance with the present invention, a skeletal structure of a three-dimensional dielectric lattice 16 is shown in FIG. 1. A plurality of nodes 18 represent the preferred location of the periodically arranged di¬ electric elements in the lattice. A number of lines 28 are shown to illustrate the symmetry of the lattice 16. Alternatively, the nodes 18 may be positioned at the midpoint of each line 28. Nodes 21-26 signify the elements which surround a resonant defect cavity (not shown) in the preferred embodiment. As shown in FIG. 1, the nodes 18 of the lattice 16 form a crystal with diamond lattice symmetry. However, it should be noted that any lattice with three-dimensional periodicity is within the scope of the present invention.

As shown in FIG. 2A, a dielectric resonator 29 has a three-dimensional dielectric lattice structure comprised of a plurality of overlapping dielectric spheres 30 having a diamond lattice symmetry. Although spherical dielectric elements are used in the preferred embodi¬ ments, any shaped element such as a disk-shaped element may be employed without departing from the scope of the present invention. A background dielectric material 37 is.located in the interstital regions around the spheres 30. In this embodiment, the spheres 30 are simply regions of air or any low-loss, low-dielectric constant material periodically arranged in a high-dielectric background material 37. A resonant defect 38 surrounded by air spheres 31-36 comprises an extra hole in the background material.

Alternatively, a dielectric resonator 39, shown in FIG. 2B, has a three-dimensional diamond lattice structure comprising a plurality of overlapping high- dielectric spheres 40 arranged to form a diamond lattice symmetry. Since the spheres 40 overlap, the interstital regions 49 of the lattice 39 may comprise air. A resonant defect cavity 48 may be formed by milling away a portion of adjacent spheres 41-46. An alternative resonant defect cavity 148 may be disposed between two spheres as shown in FIG. 2C. The cavity 148 is formed by milling away portions of dielectric spheres 45 and 46. In any of the resonator configurations of FIG.s 2A-2C, the resonant defect cavity serves to confine electro- -9 -

magnetic energy within a frequency band in the photonic band gap as long as the dielectric constant of the spheres is substantially different from the background material. Also, in any of the above-described configu¬ rations, the resonant defect cavity may comprise air or any low-dielectric material or a high-dielectric material.

In accordance with one feature of the present invention, for any of the dielectric resonators in FIG.s 2A-2C, the frequency band of electromagnetic energy within the photonic band gap stored by the resonant def-ect cavity may be tuned during construction of the resonator. As explained previously, the resonant frequency of the cavity corresponds to the center frequency of the frequency band of stored electromagnetic energy. Two parameters affect the cavity's resonant frequency: the diamond lattice constant and the size of the defect cavity. Referring to FIG. 1, a diamond lattice constant (a) for the diamond crystal lattice 16 equals the distance between the centers of two elements of a crystal, corresponding to the length between ele¬ ments 23 and 27. The diamond lattice constant is in¬ versely proportional to the frequency range of the photonic band gap. In fact, the photonic band gap center frequency (f ) may be approximately determined by the following equation:

fp = c/_ ' (a)

where . = average dielectric constant of the lattice plus its background material and c = speed of light. Thus, coarse tuning of the cavity resonant frequency is accomplished by choosing a diamond lattice constant which centers the photonic band gap on the desired resonant frequency. The actual location of the resonant frequency of the cavity inside the photonic band gap is related to the size of the defect. FIG. 3 shows the relationship between the radius of the resonant defect cavity and its resonant frequency. For a cavity resonator 29 having air spheres 30 in a high-dielectric background material 37 (FIG. 2A) or for a cavity resonator 39 having high- dielectric spheres 40 in air (FIG.s 2B-2C) , the radius of an air cavity 38 or 48 is proportional to its resonant frequency. Alternatively, for a cavity resonator having high-dielectric spheres in an air environment or air spheres in a high-dielectric environment, the radius of a high-dielectric cavity is inversely proportional to its resonant frequency. In either case, fine tuning of the cavity resonance frequency within the band gap is accom¬ plished by changing the defect size.

Another important feature of the present invention is the ability of the resonant cavity to confine electro¬ magnetic energy in a narrow frequency band within the photonic band gap as shown in FIG. 4. A perfect three- dimensional dielectric structure having diamond lattice symmetry (no resonant cavity) reflects electromagnetic energy from any incident orientation, thereby creating a photonic band gap which is represented by dashed line in FIG. 4. By putting a resonant defect cavity in the dielectric structure, energy within a narrow frequency band coupled into the cavity is trapped. No matter how it propagates once inside the cavity, it is reflected back due to the periodic arrangement of spherical ele¬ ments. This feature is also shown in FIG. 4. The density function is loosely related to the resonant frequency of the cavity. For all electromagnetic wave vector orientations for a given frequency, the density function averages the transmissivity of the cavity. Thus, the cavity exhibits a large transmissivity at the edge frequencies of the photonic gap. However, inside the gap there is no transmission except near the resonant frequency of the cavity (u. ) . The graph shows a fairly broad spread about ω, which is due to calculation limitations. In practice, the spread can be narrowed by increasing the number of periodic spherical elements surrounding the cavity.

Until now, the dielectric resonator has been des¬ cribed without any discussion as how energy is coupled into the resonant cavity. As shown in FIG. 5, a generic two-port resonator device can be constructed from the dielectric resonator 29 by adding a coupling means to the cavity 18. Two paths to the cavity are formed by milling through the two adjacent dielectric spheres 32 and 35. The paths are filled with a high-dielectric material. Thus, by making a small modification in the lattice structure, input and output paths are formed for coupling energy to the resonant cavity. Preferably, dielectric waveguides 50a and 50b are placed in the paths, each connecting to the cavity. As a result, the input wave¬ guide 50a provides a path for electromagnetic energy into the cavity, and the output waveguide 50b provides an path for narrow frequency band electromagnetic energy from the cavity. There are a number of different methods for manu¬ facturing a dielectric resonant structure ranging from arranging spherical elements as a three-dimensional structure to drilling holes in sheets of a substrate. The following is a method for manufacturing a resonant structure comprised of periodically related air spheres in a high-dielectric substrate. As shown in FIG.s 7A-2B, a representative dielectric resonator may be constructed from a plurality of stacked sheets of substrate. While seven sheets are used for this embodiment, any number of sheets can be used without departing from the scope of this invention.

Referring to FIG. 6A, hemispheres 58 and 60 are drilled in a square pattern into the top and bottom of each sheet respectively. The hemispheres 58 drilled into the top of each sheet are displaced from the hemispheres 60 drilled in the bottom of each sheet. The length of displacement corresponds to the lattice constant (a) such that the final structure represents a three-dimensional diamond crystal lattice of periodic air spheres separated by a distance (a) . The drilling pattern for adjacent sheets is rotated ninety degrees. Thus, every other sheet has the drilling pattern of sheet 54 while the remaining sheets have the drilling pattern of sheet 56. As shown in FIG. 6B, a sheet 57, which is a modified version of the sheet 54, has the resonant cavity 38 and two channels for the coupling waveguides 50a and 50b.

The sheets shown in FIG. 6C are assembled to form resonator 29 having a diamond crystal lattice structure of periodically arranged air spheres 38 as shown in the sectional view in FIG.s 7A-7B. To accomplish this, first sheet 56 is positioned on first sheet 54 such that the hemispheres 60 in the bottom of first sheet 56 are aligned with the hemispheres in the top of first sheet 54. A sheet 56r, which is a sheet 56 rotated ninety degrees, is positioned on top of the first sheet 56 such that the respective hemispheres are aligned. Sheet 57 of FIG. 6B is rotated ninety degrees and stacked onto sheet 56r, and a second sheet 54 is positioned on sheet 57. The first two steps are then repeated for the remaining sheets 56 and 56r. The resulting dielectric resonator 29 may be mounted on a substrate or copper or it may be enclosed inside a metallic cavity.

Alternatively, the manufacture of a resonant structure 39 comprised of overlapping periodically related high-dielectric spheres in an low-dielectric environment such as air includes the following steps. Referring to FIG. 5, a plurality of identical high- dielectric spherical elements 40 have a sufficient diameter so as to overlap each other in the assembled structure. ^' Preferrably, six spheres 41-46 are modified to create a resonant cavity 48 when arranged in the final structure. Additionally, holes may be drilled through two of the six spheres (43 and 46) adjacent to the resonant cavity forming a coupling path. The spheres are then attached together forming a three-dimensional diamond crystal lattice structure. A pair of waveguides 50a and 50b may be provided, serving as input and output ports respectively.

A significant benefit of a resonant device of this invention is its lower power consumption compared to traditional devices. Generally, increasing the number of layers decreases the power consumption of the resulting resonant device. This size-power tradeoff determines the optimum numbers for any particular device. However, any device embodying the resonant structure of the present invention consumes a minimal amount of power, thereby operating at maximum efficiency.

In one embodiment of the present invention, a dielectric resonant cavity 62 comprises the dielectric resonator 39 surrounded by conducting plates 63. As shown in FIG. 8, the resonator 39 comprises a plurality of high-dielectric spheres 40 periodically arranged in a low-dielectric environment such as air. Six spheres 41-46 are modified to create the resonant cavity 48 in the resonant structure 39. Additionally, channels filled with high-dielectric material are formed in two of the six spheres (43 and 46) adjacent to the resonant cavity form a coupling path to the cavity. A first dielectric waveguide 150a may be inserted into sphere 46 for coupling electromagnetic energy into the resonant cavity 48. Similarly, a second dielectric waveguide 150b positioned in sphere 43 provides a path for narrow band electromagnetic energy from the cavity. The dielectric structure 62 may be used in microwave components in¬ cluding integrated circuits.

The unique structure of the dielectric resonator 39 leads to reduced power dissipation losses by the device 62 when used in microwave and millimeter wave components, leading to more efficient performance. As previously stated, the two power loss mechanisms in existing micro¬ wave dielectric resonators are polarization loss in the dielectric material and ohmic loss at the conducting plates. Employing a resonator that has several layers of periodically arranged dielectric spheres 40 forming a three-dimensional diamond lattice surrounding the re¬ sonant cavity 48 substantially confines electromagnetic radiation. This leads to a weaker field strength at the conducting plates, translating into reduced ohmic losses. Also, the resonator 39 stores a substantial amount of power in the low-dielectric regions 37 (air) which have negligible loss tangents. As a result, the average loss tangent for the resonator 39 is much less than the loss tangent for a solid high-dielectric resonator. Thus, polarization losses will be reduced.

Another embodiment of the present invention com¬ prises a narrow bandpass filter 250 as shown in FIG. 9. The filter comprises a three-dimensional diamond lattice of high-dielectric overlapping elements 240 including the elements 241-246 surrounding a resonant cavity 248. The elements 240 are spherically shaped and are periodically arranged in a low-dielectric background environment 249 such as air. Alternatively, spherically shaped regions of a low-dielectric material such as air may be arranged in a high-dielectric background material without departing from the scope of this invention. The three-dimensional diamond lattice of elements confines incoming electromagnetic energy within a frequency band about the resonant frequency of the cavity 248. Further, the resonant cavity is surrounded by several layers of elements, making the filter very efficient at storing electromagnetic energy in the narrow passband. A di¬ electric waveguide 50fc is coupled into the resonant cavity via element 246 and provides a output path for the narrow frequency band electromagnetic energy confined in the resonant cavity.

As shown in FIG. 10A, a resonant absorber 200 having a narrow passband comprises yet another embodiment of the present invention. The absorber 200 has a three- dimensional diamond lattice structure comprised of periodically arranged elements 230 of dielectric material disposed in a high-dielectric, lossy interstital material 239. Preferably, the elements 230 are spherically shaped regions of air and the lossy material 239 comprises ferrite. As in the previous embodiments, a resonant cavity 238 is positioned within the lattice and stores electromagnetic energy in narrow frequency band about the cavity's resonant frequency. Further, a waveguide 50b may be coupled through element 236 to the resonant cavity 238 to provide an output path for the electromagnetic energy.

Resonant absorbers, such as the absorber 200 of FIG. 10A, are used in a variety of applications to reduce the radar cross-section of a structure. Referring to FIG. 10B, a structure 260 has an antenna element positioned behind a window 262 recessed in a volume 264. In accord¬ ance with the present invention, the resonant absorber 200 of FIG. 10A is positioned in the volume to attenuate microwave radiation over a broad frequency range incident to the antenna element while providing a narrow passband. To that end, the resonant cavity was constructed such that its resonant frequency corresponds to the frequency of the antenna element. Thus, a narrow frequency band of microwave radiation about the frequency of the antenna element propagates through the absorber 230. Note that the waveguide 50b may be coupled to the antenna element to increase the amplitude of the passband radiation. Alternatively, the same result may be achieved by positioning the antenna element within the resonant cavity. The diamond crystal lattice structure of air spheres 230 absorbs incident microwave energy over a broad frequency range within the lattice structure. Except for the narrow passband frequencies, the ferrite iηaterial dissipates the microwave radiation, thereby preventing an appreciable amount of energy from back- scattering off the antenna element.

One important feature of the resonant absorber 200 is that it may be tuned to i ^■ antenna element frequency. To that end, the structure 262 may further comprises a magnetizing means located adjacent to the walls of the volume 264. Magnetizing the ferrite material 239 changes its dielectric constant which ultimately shifts the frequency response of the absorber. More specifically, the passband frequency range along with the resonant frequency of the cavity 238 are shifted. Thus, the resonant frequency of the absorber can be tuned to correspond to any desired antenna element frequency.

Another emodiment of the present invention comprises a high power generator which provides an increased power generation capability compared to traditionally devices. It is known that hollow metallic cavity resonators are used in power combining techniques, where N active devices are inserted into the cavity to generate N times the power of a single device. As the number of devices increases, the electric field inside the cavity also increases. The maximum number of devices that can be place inside the cavity is ultimately limited by the breakdown field of dry air which is about 2.9 kV/mm. Thus, the power generated by a system of N devices inside the cavity corresponds to the power stored in the cavity when the electric field reaches the breakdown value.

Referring to FIG. 11, a high power generator com¬ prises a hollow resonant cavity 48 surrounded by a periodic arrangement of dielectric elements 40 forming a three-dimensional diamond lattice structure. An active device 64, such as a field-effect transistor (FET) , an IMPATT or a GUNN diode, is positioned in the resonant cavity 48. A bias circuit is attached to the active device 64 to match the device's impedance to the impedance of the cavity 48. A cable 68 is linked to the bias to provide power to the active device. A waveguide 50b is provided to direct power out of the cavity 48. As explained previously, the periodic lattice structure surrounding the resonant cavity is highly efficient in storing electromagnetic energy in a narrow passband, preferrably in the microwave and millimeter wave frequency bands. As such, the power generator stores more power than a metallic cavity device at the same resonant frequency when the peak electric field is the same.

Another feature of the power generator is its high efficiency when operated in conjuction with a solid-state oscillator (such as a FET, an IMPATT diode or a GUNN diode) to generate microwave radiation at the resonant frequency of the cavity. Typically, hollow metallic cavity resonators are used and are often operated in a pulsed mode for radar transmission. In typical resonators, cavity losses inhibit performance by dis¬ sipating power from the oscillator. Since the power generator 70 efficiently stores power in the cavity at its resonant frequency, less power is dissipated.

In accordance with another embodiment of the present invention, a two-dimensional periodic dielectric structure 300 is shown in FIG. 13. A plurality of elongated elements 302 formed of a low-dielectric material extend in parallel through opposite faces 304 and 306 of a high-dielectric background material 308. The elongated elements 302 are periodically arranged in two-dimensions in any plane orthongonal to the longitu¬ dinal axis extending through the center of a given element. A resonant defect cavity 310 is formed by removing the background material situated between ele¬ ments 302a, 302b and 302c. The resonant defect cavity may comprise air, any low-dielectric material or any high-dielectric material.

As shown in FIG. 14, the dielectric structure 300 has a plurality of cylindrical elements 302 periodically arranged to provide a triangular lattice symmetry. The dashed lines 312 illustrate the triangular lattice structure of the cylindrical elements 302 having two- dimensional periodicity along the face 304 of the back¬ ground material. The cylindrical elements 302 may simple be regions of air or any low-dielectric material. Although cylindrical elements are preferred, sub¬ stantially cylindrical elements or any shaped elongated element may be employed without departing from the scope of the present invention. For incoming electro magnetic energy 314 being generally directed in a plane orthogonal to the longitudinal axis of an elongated element, the dielectric structure reflects substantially all of the incident energy producing a photonic frequency band gap. The elongated defect cavity 310 provides a frequency range within the band gap in whch energy having frequencies within the range propagates through the structure.

For a dielectric resonator, a band pass filter or any device employing the dielectric structure of FIG. 13, the photonic band gap as well as the frequency band within the photonic band gap may be tuned during con¬ struction of the device. As explained previously, the resonant frequency of the defect cavity corresponds to the center frequency (f ) of the frequency pass band of incident electromagnetic energy as shown in FIG. 15. The center frequency (f ) is affected by the triangular lattice constant and the size of the defect cavity. Referring to FIG. 14, the triangular lattice constant (aa) for the triangular lattice 312 equals the distance between the centers of two cylindrical element cross- sections. The center frequency (f ) is proportional to the lattice constant (aa) as follows:

I fc = c/e ^{2 *} (aa)

where e = average dielectric constant of the dielectric structure

c = speed cf light. Thus, course tuning of the center frequency is accom¬ plished by manipulating the lattice constant (aa) . Fine tuning of the center frequency is accomplished by changing the defect size. Recall that FIG. 3 shows the relationship between the radius of the defect cavity and its resonant frequency (i.e., fc) . Since the dielectric structure has low-dielectric elements arranged in a high-dielectric background material, the radius of a low-dielectric cavity is proportional to its resonant frequency.

Referring back to FIG. 15, the bandwidth (Δf) of the photonic band gap is determined based on the radius (rr) of the cylindrical elements and the triangular lattice constant (aa) . As shown in FIG. 16, the maximum bandwidth of the photonic band gap is achieved when:

(rr) = 0.475(aa) .

Also note that the range of useful photonic band widths is limited as follows:

0.41 (aa)< (rr)<0.5(aa) .

The attenuation (A ) of the photonic band gap, the amplitude (A ) of the peak of the passband and the full width at half maximum (Wn) of the passband are related to the number of rows of elongated elements. The attenuation (Aa) is proportional to the number of rows of elements such that A may be increased by increasing the number of rows. Conversely, the peak amplitude (A ) and the width (W, ) are inversely proportional to the number of rows of elements. Increasing the number of rows cause the amplitude (A C) and the width (W„π) to decrease.

An important feature of the two-dimensional periodic dielectric structure of FIG. 15 is its ability to pass electromagnetic energy in a narrow frequency band within the photonic band gap. In contrast to previous embodi¬ ments, the two-dimensional structure should be positioned to receive incoming electromagnetic energy propagating in a direction 314 generally orthogonal to the longitudinal axis extending through the center of a cylindrical element 302. To facilitate this, the structure may be positioned with a hollow resonant cavity 316. Incoming radiation propagating in the direction generally ortho¬ gonal to the cylindrical elements passes through the input end 318 of the hollow cavity 316 and is directed to the dielectric structure 300. By providing the di¬ electric structure 300 having two-dimensional triangular lattice symmetry and a resonant defect cavity 310, electromagnetic energy having frequencies within the pass band range propagates through the dielectric structure to the output end 320 of the hollow cavity 316.

Another important feature of the two-dimensional periodic dielectric structure is that, due to the tri¬ angular lattice symmetry, both vertical and horizontal polarizations of electromagnetic energy waves are coupled into the structure. It is known in the prior art that many two-dimensional lattice geometries will reflect light over some frequency band for a single direction of polarization. See H. S. Bennet, Journal of Applied Physics, vol 24, page 785 in 1953. However, the triangular structure of the present invention is unique in that it reflects light from both polariztions over some frequency band. No other geometry is known to have this property. This property is important when the two dimensional periodic dielectric structure is enclosed in a metallic package to form a dielectric resonant device. No polarization effects need to be taken into account in the coupling to the dielectric resonant material.

The following is a method for manufacturing the dielectric structure, such as the structure shown in FIG. 13, comprises of periodically related low-dielectric cylindrical elements arranged in a high-dielectric background material. The dielectric structure in FIG. 13 may be used as a dielectric resonant device or a narrow band pass filter with little or no modification to the structure, so the following method applies to manu¬ facturing dielectric resonant devices and narrow band pass filters. Referring to FIG. 17A, a two-dimensional periodic dielectric structure of the present invention is constructed from a block 308 or a plurality of attached sheets of high-dielectric material. Next, cylindrical bores 302 are drilled through block 308 as shown in FIG. 17B. The bores extend in parallel through opposite sides of the block 308 and have a triangular lattice pattern 312 in a plane parallel to the opposite sides of the block. Referring to FIG. 17C, a resonant defect cavity 310 is formed in the block 308. The defect cavity is formed by drilling away the high-dielectric material located between cylindrical bores 302a, 302b and 302c. The block is then positioned in a waveguide 316 capable of receiving electromagnetic energy such that the cylin¬ drical bores extend transverse to a direction of propa¬ gation of the electromagnetic energy. As noted previously, a significant benefit of a device employing the two-dimensional periodic dielectric structure is its lower power consumption compared to traditional devices. Generally, increasing the rows of cylindrical elements decreases the power consumption of the device. This size-power tradeoff determines the optimum number of rows for any particular device. Thus, any device embodying the two-dimensional dielectric structure of the present invention consumes a minimal amount of power, thereby operating at maximum efficiency. In one embodiment, a dielectric resonator device 404 comprises a two-dimensional periodic dielectric structure 400 disposed in a metallic cavity or waveguide 416 as shown in FIG. 18. The dielectric structure 400 comprises a plurality of low-dielectric cylindrical elements 402 (i.e., air) periodically arranged in a two-dimensional triangular lattice within a high-dielectric background medium 408. A resonant defect cavity 410 is formed by removing the background material adjacent to elements 402a, 402b and 402c. The waveguide 416 has an input end 418 for coupling electromagnetic energy 414 into the dielectric structure 400. Narrow band electromagnetic energy propagating through the structure 400 is directed to the output end 420 of the waveguide. The dielectric resonator 404 may be used in microwave and millimeter wave components including integrated circuits.

In another embodiment, a narrow band pass filter 504 comprises a two-dimensional periodic dielectric structure 500 positioned in a waveguide 516 as shown in FIG. 19. The dielectric structure 500 includes low-dielectric cylindrical elements 502 (preferably filled with air) periodically arranged in a two-dimensional triangular lattice within a high-dielectric background material 508. A resonant defect cavity 510 is formed by previously explained methods. The waveguide 516 has an input end 518 for coupling electromagnetic energy 514 into the structure 504. Electromagnetic energy within a narrow pass band proagates through the dielectric structure 500 and is directed to the output end 520 of the waveguide.

Although the present invention is directed to dielectric structures comprising a low-dielectric material and a high-dielectric material, it is noted that the principles of the present invention are applicable magnetized dielectric materials. In previously described embodiments of the present invention, the magnetic permeability of the dielectric materials was considered to be equal to one and thus not a factor in the analyes. If, however, the magnetic permeability of the dielectric materials was not equal to one, consideration of magnetic permeability would be warranted. Thus, for embodiments of the present invention in which the magnetic permeability of the dielectric materials is not equal to one, dielectric structures of those embodiments comprise a first material having a low-dielectric-permeability product (e -μ ) and a second material having a high-dielectric-permeability product ( e ' μ ) .

Theoretical Basis For The Invention

In order to calculate of the electromagnetic frequency spectrum of a dielectric lattice structure, the electromagnetic fields may be expanded in a plane wave basis,

where k is in the Brillouin zone, G is summed over the reciprocal lattice, and eλ are orthogonal to (k+G) . Maxwell's equations are then expressed as a simple eigenvalue equation,

^HG,G'^hG' ' ^{= ω2/l}G,λ , (2)

G '',λ. f

where c=l and

and ,„ , is the Fourier transform of the dielectric

G G function t (r) . This eigenvalue equation is solved to yield the normal mode coefficients and frequencies of the electromagnetic modes. Having solved for H(r), the other electromagnetic fields can be determined simply. This technique provides a sirr.ple and powerful method to solve problems in electrodynamics which takes full account of the vector nature of the electromagnetic radiation. Using this technique the approximations, the finite size of the plane-wave basis and Fourier transform grid, are improved systematically.

Although it is desireable to examine the behavior of a single defect in a lattice of infinite size, compu¬ tational simplicity leads to a test system employing a crystal lattice structure with a finite unit cell size. To that end, a supercell method is employed in which one defect is positioned in a cell of eight atoms arranged in a plane the form of a diamond structure. A number of diamond cells each having a defect are linked to form a three-dimensional diamond crystal lattice. It should be noted that diamond lattice structure having multiple defects has been employed during testing for compu¬ tational simplicity. However, the test results have been corrected to correspond to a crystal lattice having a single defect in accordance with the present invention. A diamond lattice has been used for the test calcu¬ lations, although the present invention comprises any cell structure which forms a face-centered cubic crystal lattice. Tests have been performed using larger super- cells containing 16 and 32 atoms and similar results were found. Supercells of two, four, eight and sixteen atoms containing dense impurities in the planes have been considered in order to determine the dependence of bandwidth on impurity separation. Based on calculations of a one-dimensional system of periodic dielectric slabs, for which an exact solution is available, it is expected that the frequencies provided belov; are correct to within -2% at this plane-wave cutoff. Although fully converged calculations in these one-dimensional systems agreed to 0.1% it has been determined that convergence in absolute frequencies was relatively slow in comparison to con¬ ventional electonic structure calculations. This is attributed to the discontinuity in the first derivative of H(r) at the dielectric surfaces. In order to calcu¬ late the density of states D(ω) , the frequencies should be sampled at 48 k-points in the irreducible Brillouin zone of the eight atom unit cell, and then coarse grained the resulting frequencies. Although it has been explicitly verified that ω(k)=vk at long wavelengths and therefore D (ω)=ω , this is not accurately represented in D(ω) be represented in D(u) due to coarse sampling of the Brillouin zone.

A periodic arrangement of spheres of air in a dielectric medium has been considered. A material with dielectric constant of 35 and air spheres of radius 0.29a, where a is the conventional lattice constant of the diamond cell has also been considered. Impurities of two types have been considered: air spheres in the dielectric region which were located at the diamond hexagonal site and air spheres place at the bond-centered site.

Since the applicability of a band structure breaks down when an impurity destroys the translational symmetry of the dielectric lattice, the density of states of the impurity system was calculated. Calculations show that perfect bulk diamond crystal has a gap in its photonic band structure. As shown in FIG. 4, placing an air sphere at the hexagonal site introduces a single state in the gap, ω, . Since there are no travelling modes in the diamond lattice at ωb, this must be a localized mode. As shown in FIG. 12, calculations have shown that the field is localized about the defect. In fact, it has been determined that bound states whose frequencies are in the center of the gap have decay lengths as small as one lattice constant. It can be expected that this length will diverge as the bound state frequency approaches the continuum of extended states.

Recall that in FIG. 4 the localized modes are spread over modest range of frequencies. This is purely an artifact of the supercell technique employed. Because the technique considers an array of defect states each of which is localized over s me finite distance, there is tunneling between localized states on neighboring impur¬ ities. It is this hopping between defect states that introduces a non-zero width to the impurity band. For simplicity, the maximum of the defect density of states was chosen to identify the actual position of the im¬ purity state. In the inset of FIG. 4, a relationship of the bandwidth for increasing impurity separations is shown. This bandwidth decreases exponentially, as expected for exponentially bound states. In an experi¬ ment, the lattice has a finite size so that the impurity mode will have some exponentially small amplitude at the walls of the lattice. This allows the localized state to tunnel out, and introduces a finite width to the frequency spectrum.

Qualitatively, this result may be understood by analogy with the more familiar case of impurities in a crystal with a band gap in its electronic structure. Since the wavelength of light is shorter in the dielectric, these regions are analogous to a region of deep potential in the crystal. Inserting a dielectric impurity adds an attractive potential. Sufficiently strong potentials can pull a state out of the photonic conduction band into the gap, and increasing the attract¬ ive character causes a decrease in the bound state frequency (see FIG. 3) . Similarly, adding an air sphere to the dielectric region is analogous to adding a re¬ pulsive potention which pushes a state out of the pho¬ tonic valence band. In fact, the addition of an air sphere defect to the perfect diamond lattice decreased the number of valence states by one, and it created one state in the gap. One notable difference between air and dielectric impurities has been found. While the presence of an air sphere creates a single, well defined state in the gap, the presence of an air sphere creates a single, well defined state in the gap (the lowest of which is doubly degenerate) . This is reasonable because of the large number of bands above the gap.

Alternately, one can understand the localized mode as a three-dimensional Fabry-Perot interferometer. Since there are no propagating modes in the dielectric material with frequencies in the gap, it behaves as a mirror to these frequencies. The defect then is surrounded by reflecting walls, and the localized state is analogous to the familiar resonances of a metallic cavity. Thus, many microwave and millimeter wave applications exist for dielectric resonators.

While this invention has been particularly shown and described with references to preferred embodiments thereof, it will be understood by those skilled in the art that various change, in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A dielectric resonator comprising: a first dielectric material for receiving electromagnetic energy; a lattice structure comprised of a plurality of shaped elements formed of a second dielectric material and disposed in a multi-dimensional periodic relationship within the first dielectric material to provide a frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the lattice structure; and a resonant defect structure located within the lattice structure and providing a frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range is allowed to propagate through the lattice structure.

2. A dielectric resonator as claimed in Claim 1 further comprising a coupler coupled to the resonant defect structure and having a first waveguide for coupling electromagnetic energy to the defect structure and having a second waveguide for coupling electro¬ magnetic energy having frequencies in the frequency range out of the resonant defect structure.

3. A dielectric resonator as claimed in Claim 1 in which the lattice structure is in the form of a face-centered cubic crystal.

4. A dielectric resonator as claimed in Claim 1 in which the lattice structure is in the form of a diamond lattice crystal.

5. A dielectric resonator as claimed in Claim 1 in which the first dielectric material comprises air.

6. A dielectric resonator as claimed in Claim 1 in which the second dielectric material comprises air.

7. A dielectric resonator as claimed in Claim 1 in which the shaped elements are disks.

8. A dielectric resonator as claimed in Claim 1 in which the resonant defect structure comprises a dielectric spherical cavity.

9. A dielectric resonator for microwave and millimeter wave devices comprising: a first dielectric material adapted for receiving electromagnetic energy; a lattice structure comprised of a plurality of shaped elements formed of a second dielectric material and disposed in a multi-dimensional periodic relationship within the first dielectric material to provide a predetermined frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the lattice structure; a resonant defect structure located within the lattice structure and providing a narrow frequency range within the band gap wherein electromagnetic energy having frequencies within the narrow range is stored within the resonant defect structure; and a coupler linked to the resonant defect structure for coupling electromagnectic energy thereto.

10. A dielectric resonator as claimed in Claim 9 in which the coupler comprises a first waveguide for providing electromagnetic energy to the defect structure and having a second waveguide for out- putting the stored electromagnetic energy from the resonant defect structure.

11. A dielectric resonator as claimed in Claim 9 in which the resonant defect structure comprises a dielectric spherical cavity.

12. A microwave dielectric resonator comprising: a first dielectric material for receiving electromagnetic energy; a face-centered cubic crystal lattice structure disposed within the first dielectric material and being comprised of a plurality of spherically shaped elements formed of a second dielectric material, the elements being positioned at the corners of the cubic crystal lattice such that electromagnetic energy at frequencies within a predetermined frequency band is prevented from propagating through the lattice structure; a resonant defect structure formed within the crystal lattice structure adjacent to a number of the shaped elements, the defect structure having a resonant frequency which corresponds to the center frequency of a narrow frequency range within the frequency band in which electromagnetic energy within the narrow frequency range is stored within the defect structure; a plurality of conducting plates disposed adjacent to the first dielectric material and providing shielding from the external environment; and a coupler coupled to the resonant defect structure and being comprised of a first waveguide for providing electromagnetic energy to the resonant defect structure and a second waveguide for out- putting electromagnetic energy from the resonant defect structure.

13. A microwave dielectric resonator as claimed in Claim 12 in which the face-centered cubic lattice structure is formed of a diamond lattice crystal.

14. A microwave dielectric resonator as claimed in Claim 12 wherein the resonant frequency is inversely proportional to the distance between the centers of two adjacent elements of a crystal within the lattice structure.

15. A microwave dielectric resonator as claimed in Claim 12 in which the first dielectric material comprises air.

16. A microwave dielectric resonator as claimed in Claim 12 in which the second dielectric material comprises air.

17. A microwave dielectric resonator as claimed in Claim

15 wherein the resonant frequency is inversely proportional to the radius of the defect structure.

18. A microwave dielectric resonator as claimed in Claim

16 wherein the resonant frequency is proportional to the radius of the defect structure.

19. A narrow bandpass filter comprising: a first dielectric material for receiving electromagnetic energy; a crystal lattice structure comprised of a plurality of shaped elements formed of a second dielectric material and disposed in a multi¬ dimensional periodic relationship within the first dielectric material to provide a first frequency band in which electromagnetic energy having frequencies within the first frequency band is prevented from propagating through the lattice structure; a resonant defect structure located within the lattice structure and being disposed adjacent to a number of the shaped elements, the defect structure having a resonant frequency and providing a second frequency band about the resonant frequency and within the first frequency band, wherein electro¬ magnetic energy having frequencies within the second frequency band is stored in the resonant defect structure; and a coupler coupled to the defect structure and being comprised of a first dielectric waveguide for coupling the stored electromagnetic energy out of the resonant defect sturcture.

20. A narrow bandpass filter as claimed in Claim 19 in which the first dielectric material comprises air.

21. A narrow bandpass filter as claimed in Claim 19 in which the second dielectric material comprises air.

22. A narrow bandpass filter as claimed in Claim 19 in which the shaped elements are overlapping disks.

23. A narrow bandpass filter as claimed in Claim 19 in which the crystal lattice structure is in the form of a f ce-centered cubic lattice.

24. A narrow bandpass filter as claimed in Claim 19 in which the resonant defect structure is comprised of a spherically shaped cavity.

25. A narrow bandpass filter for microwave and millimeter wave systems comprising: a first dielectric material for receiving electromagnetic energy; a face-centered cubic crystal lattice structure disposed within the first dielectric material and being comprised of a plurality of spherically shaped elements formed of a second dielectric material, the elements being positioned at the corners of crystal lattice to provide a predetermined frequency stopband in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the lattice structure; a resonant defect cavity positioned within the crystal lattice structure and being adjacently disposed to a number of the spherically shaped elements, the defect cavity having a resonant frequency and providing a frequency passband about the resonant frequency and within the frequency stopband, the defect cavity storing electromagnetic energy having frequencies within the passband; and a coupler coupled to the defect cavity and being comprised of a dielectric waveguide for coupling the stored electromagnetic energy having frequencies within the passband out of the resonant defect cavity.

26. A resonant absorber for comprising: a lossy high-dielectric material for receiving electromagnetic energy; a crystal lattice structure comprised of a plurality of shaped regions of air disposed in a multi-dimensional periodic relationship within the lossy material and providing a broad frequency band in which electromagnetic energy having frequencies within the broad band is absorbed by the lattice structure; a resonant defect cavity disposed in the crystal lattice structure and positioned adjacent to a number of the air regions and providing a narrow frequency band within the broad frequency band in which electromagnetic energy having frequencies within the narrow band is allowed to propagate through the lattice structure.

27. A resonant absorber as claimed in Claim 26 in which the lossy dielectric material comprises ferrite.

28. A resonant absorber as claimed in Claim 26 in which the crystal lattice structure is in the form of a face-centered cubic structure.

29. A resonant absorber for attenuating microwave energy in a broad frequency band comprising: a lossy high-dielectric material comprising ferrite and positioned for receiving microwave energy; a face-centered cubic crystal lattice structure comprised of a plurality of spherical regions of air disposed in a multi-dimensional periodic relation¬ ship within the lossy material and providing a broad frequency band in which microwave energy having frequencies within the broad band is attenuated; and a resonant defect cavity disposed in the crystal lattice structure and being positioned adjacent to a number of the air regions, the cavity having a resonant frequency and providing a narrow frequency band about the resonant frequency and within the band frequency band in which microwave energy having frequencies with the narrow band propagates through the lattice structure.

30. An apparatus for power generation comprising: a dielectric material; a crystal lattice structure comprised of a plurality of shaped regions of air diposed in a multi-dimensional periodic relationship within the dielectric material; a resonant defect cavity disposed in uhe crystal lattice structure and comprising a plurality of power generation devices generating power in the cavity; and a waveguide coupled to the defect cavity for outputting power generated in the defect cavity.

31. An apparatus for power generation comprising: a dielectric material; a face-centered cubic crystal lattice structure comprised of a plurality of spherical regions of air diposed in a multi-dimensional periodic relationship within the dielectric material; a power generation circuit comprised of a plurality of active devices which generate electro¬ magnetic radiation having an oscillation frequency and a cable for supplying power to the circuit; a resonant defect cavity disposed in the crystal lattice structure adjacent to a number of the spherical regions of air, the cavity enclosing the active devices, the cavity having resonant frequency wherein electromagnetic energy having frequencies in close proximity to the resonant frequency is stored within the cavity, the resonant frequency being equal to the oscillation frequency such that the electo agnetic radiation generated by the active devices is stored within the cavity; and a waveguide coupled to the defect cavity for outputting stored electromagnetic radiation from the defect cavity.

32. An apparatus for microwave power generation as claimed in Claim 31 in which the face-centered cubic lattice structure forms a diamond crystal structure.

33. An apparatus for microwave power generation as claimed in Claim 31 in which the active devices are field-effect transistors or power diodes.

34. A method for manufacturing a dielectric resonator comprising: a) providing a plurality of layers of di¬ electric substrate; b) forming a first periodic arrangement of hemispheres in one side of a first group of the layers and a second periodic arrangement of hemi¬ spheres in another side of said first group of layers; c) forming a third periodic arrangement of hemispheres in one side of a second group of the layers and a fourth periodic arrangement in another side of said second group of layers layers; d) arranging the layers in a stack wherein a first layer of the second group of layers is mounted onto a first layer of the first group of layers and wherein a second layer from the second group of layers is rotated and positioned on the first layer of the second group of layers and wherein a second layer of the first group of layers is rotated and positioned on the second layer of the second group of layers; e) forming a resonant defect cavity in one of the layers; and f) repeating step d) for the remaining layers of dielectric substrate.

35. A method as claimed in Claim 34 further comprising forming a coupling means connecting to the resonant defect cavity in a layer of dielectric substrate.

36. A method as claimed in Claim 34 wherein the second layer of the second group of layers and the second layer of the first group of layers are rotated ninety degrees.

37. A method for manufacturing a dielectric resonator comprising the steps of: a) providing a plurality of layers of dielectric substrate; b) forming a first periodic arrangement of hemispheres in one side of a first group of the layers and a second periodic arrangement of hemispheres in another side of said first group of layers; c) forming a third periodic arrangement of hemispheres in one side of a second group of the layers and a fourth periodic arrangement of hemispheres in another side of said second group of layers; d) positioning a first layer of the second group relative to a first layer of the first group such that the third periodic arrangement of hemispheres of the first layer of the second group is aligned with and adjacent to the first periodic arrangement of hemispheres of the layer of the first group; e) positioning a rotated second layer of the second group relative to the first layer of the second group such that the third periodic arrangement of the rotated second layer of the second group is aligned with and adjacent to the fourth periodic arrangement of the first layer of the second group; f) positioning a rotated second layer of the first group relative to the rotated second layer of the second group such that the first periodic arrangement of the rotated second layer of the first group is aligned with and adjacent to the fourth periodic arrangement of the rotated second layer of the second group; g) forming a resonant defect cavity in one of the layers of dielectric substrate; and h) repeating steps d) to f) .

38. A method as claimed in Claim 37 further comprising forming a coupling means connecting to the resonant defect cavity in a layer of dielectric substrate.

39. A dielectric resonator as claimed in Claim 5 in which the shaped elements are overlapping spheres.

40. A dielectric resonator as claimed in Claim 9 in which the frequency band gap is within a frequency range of 1-3000 GHz.

41. A microwave dielectric resonator as claimed in Claim 15 in which the spherical elements are overlapping spheres formed of a high-dielectric material relative to air.

42. A narrow bandpass filter as claimed in Claim 19 in which the first frequecy band is within a freguency range of 1-3000 GHz.

43. A resonant absorber as claimed in Claim 26 in which the broad frequecy band is within a frequency range of 1-3000 GHz.

44. An apparatus as claimed in Claim 30 further com¬ prising: a circuit connected to the power generation devices for matching the impedance of the power generation devices to the impedance of the cavity; and a cable connected to the circuit for providing power to the circuit and the power generation devices.

45. An apparatus as claimed in Claim 30 wherein the power generation devices comprise field-effect- transistors.

46. An apparatus as claimed in Claim 30 wherein the power generation devices comprise power diodes.

47. An apparatus as claimed in Claim 30 in which the frequency band of operation is within a frequency range of 1-3000 GHz.

48. An apparatus as claimed in Claim 30 wherein the resonant defect cavity having a resonant frequency provides a frequency band comprising the resonant frequency in which electromagnetic energy generated by the power generation devices having frequencies within the band is stored in the cavity.

49. A method of manufacturing a dielectric resonator comprising: providing a plurality of high-dielectric spheres; modifying a first group of the plurality of high-dielectric spheres; arranging the plurality high-dielectric spheres in a low-dielectric environment wherein the spheres overlap each other and form a three-dimensional diamond lattice structure, the first group of spheres being positioned in the lattice structure to form a resonant cavity therein.

0 A method as claimed in Claim 49 further comprising forming a coupling means connecting to the resonant cavity by^" modifying a second group of the plurality of high-dielectric spheres.

51. A dielectric resonator comprising: a high-dielectric material for receiving electromagnetic energy; a lattice structure comprised of a plurality of elongated elements formed of a low-dielectric material and arranged in a two-dimensional periodic relationship within the high-dielectric material, the elongated elements extending in parallel through the high-dielectric material for providing a frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the lattice structure; and a resonant defect structure located within the lattice structure and providing a frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the lattice structure.

52. A dielectric resonator as claimed in Claim 51 further comprising a waveguide in which the high-dielectric material is located, the waveguide having an input end for coupling electromagnetic energy into the high-dielectric material and an output end for coupling electromagnetic energy propagating in a direction substantially orthogonal to a longitudinal axis through each elongated element having frequencies in the frequency range from the resonator.

53. A dielectric resonator as claimed in Claim 51 in which the lattice structure is a triangular lattice structure.

54. A dielectric resonator as claimed in Claim 51 wherein the elements are substantially cylindrical rods.

55. A dielectric resonator as claimed in Claim 51 wherein the elements are cylindrical rods.

56. A dielectric resonator as claimed in Claim 51 wherein the low-dielectric material comprises air.

57. A dielectric resonator as claimed in Claim 51 wherein the resonant defect structure comprises a low-dielectric elongated cavity.

58. A dielectric resonator as claimed in Claim 57 wherein the resonant defect structure has a resonant frequency corresponding to a center frequency of the frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the resonator, the resonant frequency being proportional to a cross-sectional radius of the elongated cavity.

59. A dielectric resonator as claimed in Claim 51 wherein the frequency band gap is within a frequency

6 15 range of 10 to 10 Hz.

60. A dielectric resonator comprising: a waveguide having an input end for receiving electromagnetic energy and an output end; a high-dielectric material positioned within the waveguide to receive electromagnetic energy; a lattice structure comprising a plurality of cylindrical elements formed of a low-dielectric material and arranged in a two-dimensional periodic relationship within the high-dielectric material, the cylindrical elements extending through the high-dielectric material in a direction transverse to a direction of propagation of the electromagnetic energy for providing a frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the lattice structure; and an elongated resonant defect structure formed within the lattice structure and providing a frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the lattice structure to the output end of the waveguide.

61. A dielectric resonator as claimed in Claim 60 in which the lattice structure is a triangular lattice structure.

62. A dielectric resonator as claimed in Claim 60 wherein the elements are substantially cylindrical rods.

63. A dielectric resonator as claimed in Claim 60 wherein the low-dielectric material comprises air.

64. A dielectric resonator as claimed in Claim 60 wherein the resonant defect structure comprises a low-dielectric elongated cavity extending through the high-dielectric material in a direction parallel to the elongated elements.

65. A dielectric resonator as claimed in Claim 64 wherein the resonant defect structure has a resonant frequency corresponding to a center frequency of the frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the resonator, the resonant frequency being proportional to a cross-sectional radius of the elongated cavity.

66. A dielectric resonator as claimed in Claim 60 wherein the frequency band gap is within a frequency range of 10⁶ to 10¹⁵ Hz.

67. A narrow bandpass filter comprising: a waveguide having an input end for receiving electromagnetic energy and an output end; a high-dielectric material positioned within the waveguide to receive electromagnetic energy; a lattice structure comprising a plurality of elongated elements formed of a low-dielectric material and arranged in a two-dimensional periodic relationship within the high-dielectric material, the elongated elements extending in parallel through the high-dielectric material for providing a frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the resonator; and a resonant defect structure formed within the lattice structure and providing a frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the lattice structure to the output end of the waveguide.

68. A narrow bandpass filter as claimed in Claim 67 in which the lattice structure is a triangular lattice structure.

69. A narrow bandpass filter as claimed in Claim 67 wherein the input end of the waveguide couples electromagnetic energy propagating in a direction substantially orthogonal to a longitudinal axis through each elongated element into the hybridielectric material.

70. A narrow bandpass filter as claimed in Claim 67 wherein the elements are cylindrical rods.

71. A narrow bandpass filter as claimed in Claim 67 wherein the low-dielectric material comprises air.

72. A narrow bandpass filter as claimed in Claim 67 wherein the resonant defect structure comprises a low-dielectric elongated cavity extending through the high-dielectric material in a direction parallel to the elongated elements.

73. A narrow bandpass filter as claimed in Claim 72 wherein the resonant defect structure has a resonant frequency corresponding to a center frequency of the frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the resonator, the resonant frequency being proportional to a cross-sectional radius of the elongated cavity.

74. A dielectric resonator as claimed in Claim 67 wherein the frequency band gap is within a frequency range of 10⁶ to 10¹⁵ Hz.

75. A narrow bandpass filter comprising: a waveguide having an input end for receiving electromagnetic energy and an output end; a high-dielectric material positioned within the waveguide to receive electromagnetic energy; a triangular lattice structure comprising a plurality of cylindrical elements formed of a low-dielectric material and arranged in a two- dimensional periodic relationship within the high- dielectric material, the cylindrical elements extending through the high-dielectric material in a direction transverse to a direction of propagation of the electromagnetic energy for providing a frequency band gap in which electromagnetic energy having frequencies within the band gap is prevented from propagating through the resonator; and an elongated resonant defect structure formed within the lattice structure and providing a frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the lattice structure to the output end of the waveguide.

76. A narrow bandpass filter as claimed in Claim 75 wherein the elements are substantially cylindrical rods.

77. A narrow bandpass filter as claimed in Claim 75 wherein the low-dielectric material comprises air.

78. A narrow bandpass filter as claimed in Claim 75 wherein the resonant defect structure comprises a low-dielectric elongated cavity extending through the high-dielectric material in a direction parallel to the cylindrical elements.

79. A narrow bandpass filter as claimed in Claim 78 wherein the resonant defect structure has a resonant frequency corresponding to a center frequency of the frequency range within the band gap in which electromagnetic energy having frequencies within the frequency range propagates through the resonator, the resonant frequency being proportional to a cross-sectional radius of the elongated cavity.

80. A dielectric resonator as claimed in Claim 75 wherein the frequency band gap is within a frequency range of 10⁶ to 10¹⁵ Hz.

81. A method for manufacturing a dielectric resonator comprising: providing a block of a high-dielectric material; forming a plurality of elongated bores extending in parallel through opposite sides of the block and having a two-dimensional periodic relationship; and forming a resonant defect cavity in the block extending in parallel to the bores.

82. A method as claimed in Claim 81 further comprising positioning the block within a waveguide capable of receiving electromagnetic energy such that the elongated bores extend transverse to a direction of propagation of electromagnetic energy.

83. A method as claimed in Claim 81 wherein the elon¬ gated bores each have a longitudinal axis extending through said opposite sides of the block, the bores having a two-dimensional periodic relationship in a plane orthogonal to the longitudinal axes of the bores.

84. A method as claimed in Claim 81 wherein the elon¬ gated bores are cylindrical.

85. A method for manufacturing a narrow bandpass filter comprising: providing a block of a high-dielectric material; forming a plurality of elongated bores ex¬ tending in parallel through opposite sides of the block and having a two-dimensional periodic relationship in a plane parallel to said opposite sides of the block; forming a resonant defect cavity in the block extending in parallel to the elongated bores; and positioning the block within a waveguide capable of receiving electromagnetic energy such that the elongated bores extend transverse to a direction of propagation of electromagnetic energy.