WO1993022694A1 - Modulating a light beam - Google Patents
Modulating a light beam Download PDFInfo
- Publication number
- WO1993022694A1 WO1993022694A1 PCT/US1993/003939 US9303939W WO9322694A1 WO 1993022694 A1 WO1993022694 A1 WO 1993022694A1 US 9303939 W US9303939 W US 9303939W WO 9322694 A1 WO9322694 A1 WO 9322694A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- modulator
- light
- beam elements
- recited
- grating
- Prior art date
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0002—Arrangements for avoiding sticking of the flexible or moving parts
- B81B3/001—Structures having a reduced contact area, e.g. with bumps or with a textured surface
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0808—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more diffracting elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1828—Diffraction gratings having means for producing variable diffraction
Definitions
- This invention relates to a method and apparatus for modulating a light beam and more particularly to the use of a reflective, deformable diffraction grating for performing such modulation.
- SLM spatial light modulator
- SLMs have seen many different applications from display technology to optical signal processing.
- SLMs have been used as optical correlators (e.g., pattern recognition devices, programmable holograms), optical matrix processors (e.g., matrix multipliers, optical cross-bar switches with broadcast capabilities, optical neural networks, radar beam forming) , digital optical architectures (e.g., highly parallel optical computers) and displays.
- optical correlators e.g., pattern recognition devices, programmable holograms
- optical matrix processors e.g., matrix multipliers, optical cross-bar switches with broadcast capabilities, optical neural networks, radar beam forming
- digital optical architectures e.g., highly parallel optical computers
- SUBSTITUTE SH ⁇ E optical computers benefit from high response times but don't require such high dynamic ranges.
- systems designers require SLMs with characteristics such as: high resolution, high speed (kHz frame rates) , good gray scale high contrast ratio or modulation depth, optical flatness, VLSI compatible, easy handling capability and low cost.
- no one SLM design can satisfy all the above requirements.
- different types of SLMs have been developed for different applications, often resulting in trade-offs.
- Texas Instrument for instance, has developed a "De ormable Mirror Device (DMD)" that utilizes an electromechanical means of deflecting an optical beam.
- DMD De ormable Mirror Device
- the mechanical motions needed for the operation of the DMD are relatively large and, as a result, the bandwidths are limited to tens of kilohertz.
- This device gives good contrast ratios and high-resolution and is, furthermore, compatible with CMOS, and other low power technologies.
- Nematic and ferroelectric liquid crystals have also been used as the active layer in several SLMs. Since the electrooptic effect in liquid crystals is based on the mechanical reorientation of molecular dipoles, it is to be expected that liquid crystals are faster than the DMD-type devices.
- Modulators using ferroelectric liquid crystals have exhibited moderate switching speeds (150 ⁇ sec to 100 nsec) , low-power consumption, VLSI compatible switching voltages (5-10 V) , high extinction ratios, high resolution and large apertures.
- these devices suffer from the drawbacks of limited liquid crystal lifetimes and operating temperature ranges.
- the manufacturing process is complicated by alignment problems and film thickness uniformity issues.
- Magnetooptic modulation schemes have been used to achieve faster switching speeds and to provide an optical pattern memory cell. Although these devices, in addition to achieving fast switching speeds, can achieve large contrast ratios, they suffer from a low ( ⁇ 10%) throughput
- Fiber optic modulators are electronically controlled devices that modulate light intensity and are designed to be compatible with optical fibers.
- lithium niobate (LiNb0 3 ) traveling wave modulators represent the state-of-the-art, but there is a need for low power, high efficiency, low loss, inexpensive fiber optic modulators, that can be integrated with silicon sensors and electronics, for data acquisition and medical applications.
- a typical use of a modulator combined with fiber optic technology is a data acquisition system on an airplane which consists of a central data processing unit that gathers data from remote sensors.
- fiber optics provide an ideal communication medium between the processor and the sensors which produce an electrical output that must be converted to an optical signal for transmission. The most efficient way to do this is to have a continuous wave laser at the processor and a modulator operating in reflection at the sensor. In this configuration, it is also possible to deliver power to the sensor over the fiber.
- the modulator should operate with high contrast and low insertion loss to maximize the signal to noise ratio and have low power consumption. It should further be compatible with silicon technology because the sensors and signal conditioning electronics used in these systems are largely implemented in silicon.
- Another use of a modulator combined with fiber optic technology is in the monitoring of sensors that are surgically implanted in the human body. Here optical fibers are preferred to electrical cables because of their
- Silicon modulators that do not employ waveguides and that are based on the plasma effect, require high electrical drive power and do not achieve high contrast. The need is therefore for a light modulator which can be used with fiber optic technology with low power, high efficiency, low loss, low cost and compatibility with multimode optical fibers and silicon technology.
- a light modulator which alone or together with other modulators exhibits most of the following characteristics: high resolution, high speed (Khz frame rates) , gray levels (100 levels) , high contrast ratio or modulation depth, optical flatness, VLSI compatible, easy handling capability and low cost.
- a further object of this invention is to provide a light modulator which has a tolerance for high optical power and good optical throughput.
- Yet another object of this invention is to provide a light modulator which is compatible with CMOS technology.
- Still another object of this invention is to provide a light modulator capable of use with fiber optic technology.
- a final object of this invention is to provide a light modulator which is capable of modulating white light to produce colored light.
- a presently preferred embodiment of this invention includes a modulator for modulating incident rays of light, the modulator comprising a plurality of equally spaced apart beam elements, each of which includes a light reflective planar surface.
- the elements are arranged parallel to each other with their light reflective surfaces parallel to each other.
- the modulator includes means for supporting the beam elements in relation to one another and means for moving the beam elements relative to one another so that the beams move between a first configuration wherein the modulator acts to reflect the incident rays of light as a plane mirror, and a second configuration wherein the modulator diffracts the incident rays of light as they are reflected therefrom.
- One embodiment of this invention includes a reflective deformable grating light modulator, with a grating amplitude that can be controlled electronically, consisting of a reflective substrate with a deformable grating suspended above it. In its undeformed state, with no voltage applied between the elements of the grating and the substrate, the grating amplitude is one half of the wavelength of the incoming light.
- the round-trip path difference between the light reflected from the top and bottom of the grating is one wavelength, no diffraction occurs.
- the electrostatic force pulls the elements down to cause the grating amplitude to become one quarter of the wavelength so that reflections from the elements and the substrate add destructively, causing the light to be diffracted.
- the detection system for the reflected light has a numerical aperture which accepts only the zero order beam, a mechanical motion of only one quarter of a wavelength is sufficient to modulate the reflected light with high contrast.
- the grating is formed by lithographically etching a film made of silicon nitride, aluminum, silicon dioxide or any other material which can be lithographically etched.
- the deformable grating modulator of this invention has the advantage that it is implemented in silicon technology, using micromachining and sacrificial etching of thin films to fabricate the gratings. Circuitry for addressing and multiplexing can be manufactured on the same silicon substrate and thus be directly integrated with the modulator. Direct integration with electronics is an important advantage over non-silicon based technologies like liquid crystal and electrooptic SLMs. Moreover, the device demonstrates simplicity of fabrication and can be manufactured with only a few lithographic steps.
- a further advantage of the deformable grating modulator is that because the deformable grating modulator utilizes diffraction rather than deflection of a light beam, the required mechanical motions are reduced from several microns (as in deformable mirror devices) to tenths of a micron, thus allowing for a potential three orders of magnitude in increase in speed. This speed is comparable to the fastest liquid crystal modulators, but without the device suffering the same complexity in the manufacturing process. Still a further advantage of these devices is that the required motion of the grating elements is only one quarter of a wavelength, which means that elements with high resonance frequencies can be used.
- FIG. 1(a)-(d) are cross-sections through a silicon substrate illustrating the manufacturing process of a reflective, deformable diffraction grating according to one embodiment of the invention
- FIG. 2 is an isometric, partially cut-away view of the diffraction grating, the manufacture of which is illustrated in FIG. 1.
- FIG. 3 illustrates the operation of the grating of FIG. 2 in its "non-defracting" mode;
- FIG. 4 illustrates the operation of the grating of FIG. 3 in its "diffracting" mode
- FIG. 5 is a cross-section similar to that in FIG. 3, illustrating an alternative embodiment of the grating in its "non-defracting” mode
- FIG. 6 is a cross-section similar to that in FIG. 4, illustrating the grating in FIG. 8 in its "defracting” mode
- FIG. 7 is a pictoral view illustrating a further embodiment of the grating
- FIG. 8 is a cross-section along line 8-8 in FIG. 7
- FIG. 9 is a graphical representation of the modulation of a laser beam by the grating of the invention
- FIG. 10 is an illustration of how the diffraction grating of the invention can be combined with other gratings to form a complex modulator
- FIG. 11 illustrates the operation of the grating in the modulation of colored light.
- the fabrication steps required to produce a reflective deformable grating 10 according to this invention are illustrated in FIG. 1(a)-(d).
- the first step, as illustrated in FIG. 1(a), is the deposition of an insulating layer 11 made of stoichemetric silicon nitride topped with a buffer layer of silicon dioxide followed by the deposition of a sacrificial silicon dioxide film 12 and a low-stress silicon nitride film 14, both 213 n thick, on a silicon substrate 16.
- the low-stress silicon nitride film 14 is achieved by incorporating extra silicon (beyond the stoichiometric balance) into the film, during the deposition process.
- the silicon nitride film 14 is lithographically patterned into a grid of grating elements in the form of elongate beams 18. In an individual grating, all the
- SUBSTITUTE SHEET beams are of the same dimension and are arranged parallel to one another with the spacing between adjacent beams equal to the beam width. Depending on the design of the grating, however, beams could typically be 1, 1.5 or 2 ⁇ m wide with a length that ranges from lO ⁇ m to 120 ⁇ m.
- a peripheral silicon nitride frame 20 remains around the entire perimeter of the upper surface of the silicon substrate 16. This frame 20 is further illustrated in FIG. 2 and will be more fully described below with reference to that figure.
- the sacrificial silicon dioxide film 12 is etched in hydrofluoric acid, resulting in the configuration illustrated in FIG. 1(c).
- each beam 18 now forms a free standing silicon nitride bridge, 213 run thick, which is suspended a distance of 213nm (this being the thickness of the etched away sacrificial film 12) clear of the silicon substrate.
- the silicon dioxide film 12 is not entirely etched away below the frame 20 and so the frame 20 is supported, a distance of 213 nm, above the silicon substrate 16 by this remaining portion of the silicon dioxide film 12.
- the beams 18 are stretched within the frame and kept straight by the tensile stress imparted to the silicon nitride film 14 during the deposition of that film.
- the frame is formed integrally with the beams 18 and thus provides a relatively rigid supporting structure which maintains the tensile stress within the beams 18.
- the beams are kept straight and a distance of 213 nm above the surface of the silicon substrate 16.
- the operation of the deformable grating 10, formed by the above process, is illustrated with reference to FIG. 3 and 4.
- each of the beams 18 are 213 nm thick and are suspended a distance of 213 nm clear of the substrate 16.
- the distance from the top of each beam to the top of the substrate is 426 nm.
- the distance between the top of the reflective surface on the beams to the top of the reflective surface on the substrate is also 426 nm.
- This distance is known as the grating amplitude.
- the grating amplitude of 426 nm is therefore equal to half of the wavelength of the incident light and, therefore, the total path length difference for the light reflected from the beams and from the substrate equals the wavelength of the incident light.
- this grating can be used to modulate the reflected light with high contrast.
- FIGS. 5 and 6 an alternative embodiment of the diffraction grating 30 of the invention is illustrated.
- the grating 30 consists of a plurality of equally spaced, equally sized, fixed beams 32 and a plurality of equally spaced, equally sized, movable beams 34 in which the movable beams 34 lie in the spaces between the fixed beams 32.
- Each fixed beam 32 is supported on and held in position by a body of supporting material 36 which runs the entire length of the fixed beam 32.
- the bodies of material 36 are formed during a lithographic etching process in which the material between the bodies 36 is removed.
- the fixed beams 32 are arranged to be coplanar with the movable beams 34 and present a flat upper surface which is coated with a reflective layer 38.
- the grating 30 acts as a flat mirror when it reflects incident light, however, when a voltage is applied between the beams and an electrode 40 at the base of the grating 30 the movable beams 34 move downwards as is illustrated in FIG. 6.
- FIGS. 7 and 8 SUBSTITUTE SHEET modulate incident light in the same manner as the grating 10 illustrated in FIGS. 1 to 4.
- this grating 41 consists of a sacrificial silicon dioxide film 42, a silicon nitride film 44 and a substrate 46.
- the substrate 46 has no reflective layer formed thereon and only the silicon nitride film 44 has. a reflective coating 45 formed thereon.
- the deformable beams 48 are coplanar in their undeformed state and lie close to one another so that together they provide a substantially flat reflective surface.
- the beams 48 are, however, formed with a neck 50 at either end, which is off-center of the longitudinal center line of each of the beams 48.
- a uniformly distributed force as a result of an applied voltage for example, is applied to the beams 48 the resultant force F, for each beam 48, will act at the geometric center 52 of that beam.
- a moment of rotation or torque is applied to each beam 48 which results in a rotation of each beam 48 about its axis 54 to the position 48' indicated in broken lines. This is known as "blazing" a diffraction grating. As can be seen from FIG.
- the reflective planes 56 of the beams 48 remain parallel to each other even in this "blazed” configuration and therefore, the grating amplitude d is the perpendicular distance between the reflective surfaces of adjacent beams.
- This "blazed" grating will operate to diffract light in the same manner as a sawtooth grating.
- a deformable diffraction grating can be constructed in which, in its undeformed state, all the reflective elements are in the form of movable beam elements arranged parallel, adjacent and coplanar with each other. In this type of grating not only the grating
- SUBSTITUTE SHEET amplitude i.e., the perpendicular distance between adjacent reflective surfaces
- This arrangement has the advantage that both the amplitude and the phase of the reflected/diffracted light can be modulated.
- the electrical, optical and mechanical characteristics of a number of modulators, similar in design to the modulator illustrated with reference to FIGS. 1 to 4 but of different dimensions were investigated by using a Helium Neon laser (of 633 nm wavelength) focused to a spot size of 36 ⁇ m on the center portion of each modulator.
- This spot size is small enough so that the curvature of the beams in the region where the modulator was illuminated can be neglected, but is large enough to allow the optical wave to be regarded as a plane wave and covering enough grating periods to give good separation between the zero and first order diffraction modes resulting from the operation of the grating. It was discovered that grating periods of (i.e.) the distance between the centerlines of two adjacent beams in the grating, 2,3 and 4 ⁇ m and a wavelength of 633 nm resulted in first order diffraction angles of 18' , 14 * and 9" respectively.
- One of these first order diffracted light beams was produced by using a 120 ⁇ m-long grating modulator with 1.5 ⁇ m-wide beams at atmospheric pressure together with a HeNe light beam modulated at a bit rate of 500 kHz. detected by a low-noise photoreceiver and viewed on an oscilloscope.
- the resulting display screen 30 of the oscilloscope is illustrated in FIG. 9.
- the resonant frequency of the grating elements should first be considered.
- the resonant frequency of the mechanical structure of the grating of the invention was measured by driving the deformable grating modulator with a step function and
- the area of the aluminum on the deformable grating modulator is roughly 0.2 cm 2 , which corresponds to an RC limited 3-dB bandwidth of 1 MHz with roughly 100 ohms of series resistance.
- This large RC time constant slowed down the step function, however, enough power existed at the resonant frequency to excite vibrations, even in the shorter beams.
- the Q- factor was too low (approximately 1.5) for accurate measurements, so the measurements were made at a pressure of 150 mbar. At this pressure, the Q-factor rose to 8.6, demonstrating that air resistance is the major damping mechanism, for a grating of this nature, in a normal atmosphere.
- the range of bandwidths for these gratings is therefore from 1.8 MHz for the deformable grating modulator with 120 ⁇ m beams to 6.1 MHz for the deformable grating modulator with 40 ⁇ m beams.
- a contrast of 16dB for the 120 ⁇ m-long bridges could be observed.
- modulation depth is taken to mean the ratio of the change in optical intensity to peak intensity.
- the input (lower trace 62) on the screen 60 represents a pseudo-random bit stream switching between 0 and -2.7 V across a set of grating devices on a 1 cm by 1
- the observed switching transient with an initial fast part followed by a RC dominated part, is caused by the series resistance of the deformable grating modulator, which is comparable to a 50 ohm source resistance.
- the output (upper trace 64) on the screen corresponds to the optical output of a low-noise photoreceiver detecting the first diffraction order of the grating used.
- the output (upper trace 64) from the deformable grating is high when the beams are relaxed and low when the beams are deflected.
- the switching voltage was found to be 3.2 V for gratings with 120 ⁇ m long beams and, if it is assumed that tension dominates the restoring forces, the switching voltage is inversely proportional to the beam length and therefore, the predicted switching voltage for 40 ⁇ m long beams will be 9.6 V.
- the importance of the switching voltage is that below this voltage, the deformable grating modulator can be operated in an analog fashion, however, if a voltage greater than the switching voltage is applied to the modulator it acts in a digital manner. Nonetheless, it is important to note that operating the modulator to the point of contact is desirable from an applications point of view, because as discussed above when the beams are
- the use of the modulator of this invention in displays requires high yield integration of individual modulator elements into 2-D arrays such as that illustrated in FIG. 10 which shows a plurality of grating modulators which can be used to provide a gray-scale operation.
- Each of the individual modulators 66, 68, 70, 72 consist of a number of beams and gray-scale can be obtained by addressing each modulator in a binary-weighted manner.
- the hysteresis characteristic for latching (as described above) can be used to provide gray-scale variation without analog control of the voltage supplied to individual grating modulator elements.
- FIG. 10 shows a plurality of grating modulators which can be used to provide a gray-scale operation.
- Each of the individual modulators 66, 68, 70, 72 consist of a number of beams and gray-scale can be obtained by addressing each modulator in a binary-weighted manner.
- the hysteresis characteristic for latching (as described above) can be used to provide gray
- the reflective, deformable grating light modulator of this invention is a device which exhibits high resolution (40 by 40 ⁇ m 2 to 100 ⁇ m 2 ) ; high response times/large bandwidth (2 to 6 MHz) ; high contrast ratio (close to 100% modulation with a 3V switching Voltage) ; is polarization independent and easy to use.
- This device also has tolerance for high optical power, has good optical throughput, is simple to manufacture, CMOS compatible, and has application in a wide range of fields including use as an SLM and with fiber optic technology.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019940703837A KR100274482B1 (en) | 1992-04-28 | 1993-04-28 | Method and apparatus for modulating light beam |
JP51945693A JP3401250B2 (en) | 1992-04-28 | 1993-04-28 | Modulation of light beam |
AT93910831T ATE208048T1 (en) | 1992-04-28 | 1993-04-28 | MODULATION OF A LIGHT BEAM |
DE69331056T DE69331056T2 (en) | 1992-04-28 | 1993-04-28 | MODULATION OF A LIGHT BEAM |
EP93910831A EP0638177B1 (en) | 1992-04-28 | 1993-04-28 | Modulating a light beam |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/876,078 | 1992-04-28 | ||
US07/876,078 US5311360A (en) | 1992-04-28 | 1992-04-28 | Method and apparatus for modulating a light beam |
PCT/US1995/002963 WO1996027810A1 (en) | 1992-04-28 | 1995-03-07 | Deformable grating apparatus including stiction prevention means |
Publications (1)
Publication Number | Publication Date |
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WO1993022694A1 true WO1993022694A1 (en) | 1993-11-11 |
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ID=26789544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1993/003939 WO1993022694A1 (en) | 1992-04-28 | 1993-04-28 | Modulating a light beam |
Country Status (1)
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WO (1) | WO1993022694A1 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0689078A1 (en) * | 1994-06-21 | 1995-12-27 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same |
WO1996041217A1 (en) * | 1995-06-07 | 1996-12-19 | Silicon Light Machines | Flat diffraction grating light valve |
WO1997026569A2 (en) * | 1996-01-18 | 1997-07-24 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
EP0801319A1 (en) * | 1995-11-01 | 1997-10-15 | Matsushita Electric Industrial Co., Ltd. | Outgoing efficiency control device, projection type display apparatus, infrared sensor and non-contact thermometer |
JPH11119122A (en) * | 1997-10-13 | 1999-04-30 | Seiko Epson Corp | Optical element, driving method therefor, optical head, optical recording/reproducing device, printer and image projection device |
US5949570A (en) * | 1995-06-20 | 1999-09-07 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator |
US6300063B1 (en) | 1995-11-29 | 2001-10-09 | Affymetrix, Inc. | Polymorphism detection |
JP2002162599A (en) * | 2000-11-24 | 2002-06-07 | Sony Corp | Stereoscopic image display device |
US6785001B2 (en) | 2001-08-21 | 2004-08-31 | Silicon Light Machines, Inc. | Method and apparatus for measuring wavelength jitter of light signal |
US6839479B2 (en) | 2002-05-29 | 2005-01-04 | Silicon Light Machines Corporation | Optical switch |
US6953663B1 (en) | 1995-11-29 | 2005-10-11 | Affymetrix, Inc. | Polymorphism detection |
US7046420B1 (en) | 2003-02-28 | 2006-05-16 | Silicon Light Machines Corporation | MEM micro-structures and methods of making the same |
US7470783B2 (en) | 1995-12-15 | 2008-12-30 | Affymetrix, Inc. | Photocleavable protecting groups and methods for their use |
US7710628B2 (en) | 2006-09-07 | 2010-05-04 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for correcting output light-amounts of spatial light modulator, image recording apparatus, and image recording method |
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US4596992A (en) * | 1984-08-31 | 1986-06-24 | Texas Instruments Incorporated | Linear spatial light modulator and printer |
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US4492435A (en) * | 1982-07-02 | 1985-01-08 | Xerox Corporation | Multiple array full width electro mechanical modulator |
US4596992A (en) * | 1984-08-31 | 1986-06-24 | Texas Instruments Incorporated | Linear spatial light modulator and printer |
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Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0689078A1 (en) * | 1994-06-21 | 1995-12-27 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same |
US5920418A (en) * | 1994-06-21 | 1999-07-06 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator |
WO1996041217A1 (en) * | 1995-06-07 | 1996-12-19 | Silicon Light Machines | Flat diffraction grating light valve |
US5949570A (en) * | 1995-06-20 | 1999-09-07 | Matsushita Electric Industrial Co., Ltd. | Diffractive optical modulator and method for producing the same, infrared sensor including such a diffractive optical modulator and method for producing the same, and display device including such a diffractive optical modulator |
EP0801319A1 (en) * | 1995-11-01 | 1997-10-15 | Matsushita Electric Industrial Co., Ltd. | Outgoing efficiency control device, projection type display apparatus, infrared sensor and non-contact thermometer |
EP0801319A4 (en) * | 1995-11-01 | 1998-04-29 | Matsushita Electric Ind Co Ltd | Outgoing efficiency control device, projection type display apparatus, infrared sensor and non-contact thermometer |
EP1367424A3 (en) * | 1995-11-01 | 2003-12-17 | Matsushita Electric Industrial Co., Ltd. | Optical modulator including microlenses for input and output beam |
EP1367424A2 (en) * | 1995-11-01 | 2003-12-03 | Matsushita Electric Industrial Co., Ltd. | Optical modulator including microlenses for input and output beam |
EP1278093A3 (en) * | 1995-11-01 | 2003-07-09 | Matsushita Electric Industrial Co., Ltd. | Outgoing efficiency control device, projection type display apparatus, infrared sensor and non-contact thermometer |
US6072620A (en) * | 1995-11-01 | 2000-06-06 | Matsushita Electric Industrial Co., Ltd. | Output efficiency control device, projection-type display apparatus, infrared sensor, and non-contact thermometer |
EP1278093A2 (en) * | 1995-11-01 | 2003-01-22 | Matsushita Electric Industrial Co., Ltd. | Outgoing efficiency control device, projection type display apparatus, infrared sensor and non-contact thermometer |
US8095323B2 (en) | 1995-11-29 | 2012-01-10 | Affymetrix, Inc. | Polymorphism detection |
US6300063B1 (en) | 1995-11-29 | 2001-10-09 | Affymetrix, Inc. | Polymorphism detection |
US6586186B2 (en) | 1995-11-29 | 2003-07-01 | Affymetrix, Inc. | Polymorphism detection |
US6953663B1 (en) | 1995-11-29 | 2005-10-11 | Affymetrix, Inc. | Polymorphism detection |
US7674587B2 (en) | 1995-11-29 | 2010-03-09 | Affymetrix, Inc. | Polymorphism detection |
US7470783B2 (en) | 1995-12-15 | 2008-12-30 | Affymetrix, Inc. | Photocleavable protecting groups and methods for their use |
WO1997026569A2 (en) * | 1996-01-18 | 1997-07-24 | The Board Of Trustees Of The Leland Stanford Junior University | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
WO1997026569A3 (en) * | 1996-01-18 | 1997-10-09 | Univ Leland Stanford Junior | Method and apparatus for using an array of grating light valves to produce multicolor optical images |
JPH11119122A (en) * | 1997-10-13 | 1999-04-30 | Seiko Epson Corp | Optical element, driving method therefor, optical head, optical recording/reproducing device, printer and image projection device |
JP2002162599A (en) * | 2000-11-24 | 2002-06-07 | Sony Corp | Stereoscopic image display device |
US6785001B2 (en) | 2001-08-21 | 2004-08-31 | Silicon Light Machines, Inc. | Method and apparatus for measuring wavelength jitter of light signal |
US6839479B2 (en) | 2002-05-29 | 2005-01-04 | Silicon Light Machines Corporation | Optical switch |
US7046420B1 (en) | 2003-02-28 | 2006-05-16 | Silicon Light Machines Corporation | MEM micro-structures and methods of making the same |
US7710628B2 (en) | 2006-09-07 | 2010-05-04 | Dainippon Screen Mfg. Co., Ltd. | Method and apparatus for correcting output light-amounts of spatial light modulator, image recording apparatus, and image recording method |
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