WO1993026050A1 - Two-level microbridge bolometer imaging array and method of making same - Google Patents
Two-level microbridge bolometer imaging array and method of making same Download PDFInfo
- Publication number
- WO1993026050A1 WO1993026050A1 PCT/US1992/004895 US9204895W WO9326050A1 WO 1993026050 A1 WO1993026050 A1 WO 1993026050A1 US 9204895 W US9204895 W US 9204895W WO 9326050 A1 WO9326050 A1 WO 9326050A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- silicon nitride
- glass
- array
- dielectric
- Prior art date
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 21
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 21
- 239000011521 glass Substances 0.000 claims description 17
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 17
- 239000006096 absorbing agent Substances 0.000 description 4
- WYTGDNHDOZPMIW-RCBQFDQVSA-N alstonine Natural products C1=CC2=C3C=CC=CC3=NC2=C2N1C[C@H]1[C@H](C)OC=C(C(=O)OC)[C@H]1C2 WYTGDNHDOZPMIW-RCBQFDQVSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910000889 permalloy Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000002195 soluble material Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N19/00—Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Definitions
- the field of the invention is in a two-level infrared bolometer array based on a pitless microbridge detector structure with integrated circuitry on a silicon substrate beneath.
- This invention is directed to a pixel size sensor of an array of sensors for an infrared pitless microbridge construction of high fill factor.
- the large fill factor (> 75%) is made possible by placing the detector microbridge on a second plane above the silicon surface carrying the integrated diode and bus lines.
- Figure 1 is an elevation view of the two-level detector.
- Figure 3 is a plan view of the top plane of the detector.
- Figure 3a shows adjoining detectors.
- Figure 4 is a schematic representation of a pixel circuit and connections.
- Figure 5 and 6 show perspective and top views of an array of the two-level detectors.
- the elevation and/or cross section view of the two-level pitless microbridge bolometer pixel 10 is shown in Figure 1.
- the device 10 has two levels, an elevated microbridge detector 11 and lower level 12.
- the lower level has a flat surfaced semiconductor substrate 13, such as single crystal silicon substrate.
- the surface 14 of the silicon substrate 13 has fabricated thereon several components of an integrated circuit 15 including diodes, x and y bus lines, connections, and contact pads at the ends of the x and y bus lines, the fabrication following conventional silicon IC technology.
- the integrated circuit 15 is coated with a protective layer of silicon nitride 16.
- a top plan view of the lower level is shown in Figure 2 and comprises a y-diode metal (via) and an x-diode metal (via), chrome-gold-chrome x and y bus lines, a y- side bus conductor contact 18, an x-side contact 19, and the silicon nitride protective layer.
- the valley strip 17 is the area not covered by the elevated detector.
- the elevated detector level 11 includes a silicon nitride layer 20, a serpentine metallic resistive layer 21, such as of nickel-iron, often called permalloy, a silicon nitride layer 22 over the layers 20 and 21, and an IR absorber coating 23 over the silicon nitride layer 22.
- the absorber coating may also be of a nickel-iron alloy.
- Downwardly extending silicon nitride layers 20' and 22' deposited at the same time during the fabrication make up the four sloping support legs for the elevated detector level. The number of support legs may be greater or less than four.
- the cavity 26 (approximately 3 microns high) between the two levels is ambient atmosphere.
- the cavity 26 was originally filled with a previously deposited layer of easily dissolvable glass or other dissolvable material until the layers 20, 20' and 22, 22' were deposited. Subsequently in the process the glass was dissolved out to leave the cavity.
- the horizontal dimension, as shown, is greatly foreshortened for descriptive purposes. That is, the height of Figure 1 is greatly exaggerated in the drawing compared to the length in order to show the details of the invention.
- Figure 3 is a top plan view of the elevated detector level 11. This drawing is made as though the overlying absorber coating 23 and upper silicon nitride layer 22 are transparent so the serpentine resistive layer path 21 can be shown. The exact layout of the serpentine pattern 21 is not significant to the invention.
- the resistive lines and spaces may be about 1.5 micron.
- Permalloy was selected as the material for the resistive path 21 in one embodiment because of its relatively high resistivity together with a good temperature coefficient of resistance. In one embodiment the resistivity was on the order of 2500 ohms, with a fill factor of about 75 % .
- the ends of the resistive paths 21a and 21b are continued down the slope area 30 to make electrical contact with pads 31 and 32 on the lower level.
- Figure 3 also shows nitride window cuts 35, 36 and 37 which are opened through the silicon nitride layers 20 and 22 to provide access to the phos-glass beneath for dissolving it from beneath the detector plane.
- nitride cuts may be made by ion milling or other suitable process. It may be noted that the ion milled cuts 35, 36 and 37 to provide this access are very narrow ( ⁇ 2 microns) and are shared with adjacent pixels on the sides, (see
- Figure 3a thus maximizing the area available to the detector and thus maximizing the resulting fill-factor.
- the four supporting legs may be as short or as long as necessary to provide adequate support and thermal isolation. With the detector thickness of 3000 A or less, the thermal impedance is high over the entire detector film. Consequently, short legs should not contribute excessively to the conductance.
- Figure 3a shows that the adjacent identical pixels are in close proximity.
- Figure 4 is a schematic representation of a pixel circuit shown in the other figures comprising the sensing element 21 and the connections to it which are clearly labeled on the drawing.
- each pixel assembly may cover an area about 50 microns on a side, for example.
- Figures 5 and 6, as well as Figure 3a show a section of the array.
- Figure 5 shows in perspective the sensing ridges of abutting sensors in a column. This figure is partially cut away to show the lower level and the cavity as well.
- the ridges may be about 40 microns wide, so that the elevated detector pixels 11 are on the order of 50x40 microns.
- Figure 6 is a top view block diagram of Figure 5.
- a suitable IR lens system is usually used to focus a scene onto the array of pixels.
- a chopper may be used if desired to interrupt the incoming IR energy in synchronism with the related utilizing video electronics.
- the focused scene heats each pixel according to the energy of the received scene at each pixel position and changes the resistance of the resistive layer 21 according to the pixel temperature.
- the upper level 11 is then ready to commence.
- a layer of phos-glass or other easily soluble material approximately 3 microns thick is deposited and delineated along x-direction strips and the strip slopes 30 and 30' are thoroughly rounded to eliminate slope coverage problems. In the delineation the glass is cut to less than one micron on the strip 17.
- the remaining glass is cut to open the strip, and the external glass areas including the x-pad and the y-pad.
- the upper plane silicon nitride base layer 20 is then deposited, the nickel-iron resistance layer 21 is deposited, delineated, and connected to the lower plan contacts 18 and 19, and covered with silicon nitride passivation layer 22.
- the trim site 40 ( Figure 3) is cut, x-pads and y-pads are opened, the absorber coating 23 is deposited and delineated, and finally the side slots 35, 36 and 37 are ion milled allowing the phos-glass to be dissolved from beneath the detector plane.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP92914216A EP0645054B1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
CA002121042A CA2121042C (en) | 1992-06-11 | 1992-06-11 | Thermal sensor |
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
DE69215241T DE69215241T2 (en) | 1992-06-11 | 1992-06-11 | IMAGING BOLOMETER MATRIX AT TWO LEVELS FROM MICROBRIDGES AND METHOD FOR THE PRODUCTION THEREOF. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002121042A CA2121042C (en) | 1992-06-11 | 1992-06-11 | Thermal sensor |
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1993026050A1 true WO1993026050A1 (en) | 1993-12-23 |
Family
ID=25677180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1992/004895 WO1993026050A1 (en) | 1992-06-11 | 1992-06-11 | Two-level microbridge bolometer imaging array and method of making same |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO1993026050A1 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995014218A1 (en) * | 1993-11-17 | 1995-05-26 | Honeywell Inc. | Infrared radiation imaging array with compound sensors forming each pixel |
WO1996021248A1 (en) * | 1994-12-30 | 1996-07-11 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
US5760398A (en) * | 1995-12-04 | 1998-06-02 | Lockheed Martin Ir Imaging Systems, Inc. | Infrared radiation detector having a reduced active area |
US5811815A (en) * | 1995-11-15 | 1998-09-22 | Lockheed-Martin Ir Imaging Systems, Inc. | Dual-band multi-level microbridge detector |
US6194722B1 (en) | 1997-03-28 | 2001-02-27 | Interuniversitair Micro-Elektronica Centrum, Imec, Vzw | Method of fabrication of an infrared radiation detector and infrared detector device |
US6249002B1 (en) | 1996-08-30 | 2001-06-19 | Lockheed-Martin Ir Imaging Systems, Inc. | Bolometric focal plane array |
US6515285B1 (en) | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
US6730909B2 (en) | 2000-05-01 | 2004-05-04 | Bae Systems, Inc. | Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor |
US6791610B1 (en) | 1996-10-24 | 2004-09-14 | Lockheed Martin Ir Imaging Systems, Inc. | Uncooled focal plane array sensor |
US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
US8368022B2 (en) | 2007-09-10 | 2013-02-05 | Centre National De La Recherche Scientifique (Cnrs) | Bolometer with heat feedback |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990016082A1 (en) * | 1989-06-21 | 1990-12-27 | Hughes Aircraft Company | Radiation detector array using radiation sensitive bridges |
US5008541A (en) * | 1988-11-29 | 1991-04-16 | Commissariat A L'energie Atomique | Monolithic detection or infrared imaging structure and its production process |
-
1992
- 1992-06-11 WO PCT/US1992/004895 patent/WO1993026050A1/en active IP Right Grant
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5008541A (en) * | 1988-11-29 | 1991-04-16 | Commissariat A L'energie Atomique | Monolithic detection or infrared imaging structure and its production process |
WO1990016082A1 (en) * | 1989-06-21 | 1990-12-27 | Hughes Aircraft Company | Radiation detector array using radiation sensitive bridges |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1995014218A1 (en) * | 1993-11-17 | 1995-05-26 | Honeywell Inc. | Infrared radiation imaging array with compound sensors forming each pixel |
WO1996021248A1 (en) * | 1994-12-30 | 1996-07-11 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
US5600148A (en) * | 1994-12-30 | 1997-02-04 | Honeywell Inc. | Low power infrared scene projector array and method of manufacture |
USRE37146E1 (en) | 1994-12-30 | 2001-04-24 | Honeywell International Inc. | Low power infrared scene projector array and method of manufacture |
US6515285B1 (en) | 1995-10-24 | 2003-02-04 | Lockheed-Martin Ir Imaging Systems, Inc. | Method and apparatus for compensating a radiation sensor for ambient temperature variations |
US7495220B2 (en) | 1995-10-24 | 2009-02-24 | Bae Systems Information And Electronics Systems Integration Inc. | Uncooled infrared sensor |
US5811815A (en) * | 1995-11-15 | 1998-09-22 | Lockheed-Martin Ir Imaging Systems, Inc. | Dual-band multi-level microbridge detector |
US6157404A (en) * | 1995-11-15 | 2000-12-05 | Lockheed-Martin Ir Imaging Systems, Inc. | Imaging system including an array of dual-band microbridge detectors |
US5760398A (en) * | 1995-12-04 | 1998-06-02 | Lockheed Martin Ir Imaging Systems, Inc. | Infrared radiation detector having a reduced active area |
US6249002B1 (en) | 1996-08-30 | 2001-06-19 | Lockheed-Martin Ir Imaging Systems, Inc. | Bolometric focal plane array |
US6791610B1 (en) | 1996-10-24 | 2004-09-14 | Lockheed Martin Ir Imaging Systems, Inc. | Uncooled focal plane array sensor |
US6884636B2 (en) | 1997-03-28 | 2005-04-26 | Interuniversitair Micro-Elektronica Centrum (Imec,Vzw) | Method of fabrication of an infrared radiation detector and infrared detector device |
US7075081B2 (en) | 1997-03-28 | 2006-07-11 | Interuniversitair Microelektronica Centrum (Imec Vzw) | Method of fabrication of an infrared radiation detector and infrared detector device |
US7176111B2 (en) | 1997-03-28 | 2007-02-13 | Interuniversitair Microelektronica Centrum (Imec) | Method for depositing polycrystalline SiGe suitable for micromachining and devices obtained thereof |
US7320896B2 (en) | 1997-03-28 | 2008-01-22 | Interuniversitair Microelektronica Centrum (Imec) | Infrared radiation detector |
US6194722B1 (en) | 1997-03-28 | 2001-02-27 | Interuniversitair Micro-Elektronica Centrum, Imec, Vzw | Method of fabrication of an infrared radiation detector and infrared detector device |
US6730909B2 (en) | 2000-05-01 | 2004-05-04 | Bae Systems, Inc. | Methods and apparatus for compensating a radiation sensor for temperature variations of the sensor |
US8368022B2 (en) | 2007-09-10 | 2013-02-05 | Centre National De La Recherche Scientifique (Cnrs) | Bolometer with heat feedback |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5300915A (en) | Thermal sensor | |
US4914055A (en) | Semiconductor antifuse structure and method | |
US6144285A (en) | Thermal sensor and method of making same | |
WO1993026050A1 (en) | Two-level microbridge bolometer imaging array and method of making same | |
US5939971A (en) | Infrared bolometer | |
US4720738A (en) | Focal plane array structure including a signal processing system | |
EP0985137B1 (en) | A thermal detector array | |
US5844297A (en) | Antifuse device for use on a field programmable interconnect chip | |
US6094127A (en) | Infrared bolometer and method for manufacturing same | |
US5959298A (en) | Infrared detector array with an elevated thin film | |
EP0645054B1 (en) | Two-level microbridge bolometer imaging array and method of making same | |
US7170059B2 (en) | Planar thermal array | |
EP1137918B1 (en) | Infrared bolometer | |
JPH0621423A (en) | Infrared detection device and its manufacture | |
US5631467A (en) | Etching of ceramic materials with an elevated thin film | |
JP2852562B2 (en) | Temperature sensor | |
EP0281026A2 (en) | High density optical mosaic detector and method for its fabrication | |
JP3715886B2 (en) | Manufacturing method and structure of thermal infrared solid-state imaging device | |
EP1141669B1 (en) | Infrared bolometer and method for manufacturing same | |
JPS5870588A (en) | Temperature sensor and method of producing same | |
KR100299642B1 (en) | Three-level infra-red bolometer | |
WO2000003214A1 (en) | Bolometer having an increased fill factor | |
JP3408163B2 (en) | Semiconductor device and manufacturing method thereof | |
JPS6447046A (en) | Mos-type semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CA JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH DE DK ES FR GB GR IT LU MC NL SE |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2121042 Country of ref document: CA |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1992914216 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1992914216 Country of ref document: EP |
|
WWG | Wipo information: grant in national office |
Ref document number: 1992914216 Country of ref document: EP |