WO1995023427A3 - Apparatus for thermal treatment of thin film wafer - Google Patents

Apparatus for thermal treatment of thin film wafer Download PDF

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Publication number
WO1995023427A3
WO1995023427A3 PCT/US1995/002008 US9502008W WO9523427A3 WO 1995023427 A3 WO1995023427 A3 WO 1995023427A3 US 9502008 W US9502008 W US 9502008W WO 9523427 A3 WO9523427 A3 WO 9523427A3
Authority
WO
WIPO (PCT)
Prior art keywords
wafer
thermal treatment
heater block
thin film
holding clamp
Prior art date
Application number
PCT/US1995/002008
Other languages
French (fr)
Other versions
WO1995023427A2 (en
Inventor
Hyun-Su Kyung
Won-Song Choi
Jung-Ho Shin
Original Assignee
Varian Associates
Kyung Hyun Su
Choi Won Song
Shin Jung Ho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Associates, Kyung Hyun Su, Choi Won Song, Shin Jung Ho filed Critical Varian Associates
Priority to US08/564,256 priority Critical patent/US5791895A/en
Priority to EP95911781A priority patent/EP0702775A4/en
Publication of WO1995023427A2 publication Critical patent/WO1995023427A2/en
Publication of WO1995023427A3 publication Critical patent/WO1995023427A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/14—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/005—Transport systems

Abstract

The apparatus of the present invention is for the thermal treatment of a thin film wafer (200) and includes a vacuum chamber, a heater block (52), a holding clamp (60) for receiving the heater block and for holding a wafer (200) and which includes a specific weight to press the wafer against the heater block, a wafer supply means (70) for supplying the wafer to, positioning the wafer on and removing the wafer from the holding clamp, and an elevator means (80) for moving the holding clamp toward and away from the heater block to permit thermal treatment of the wafer in the vacuum chamber. The present invention advantageously supplies and removes the wafer together with minimizing damage to the wafer due to excess clamping force.
PCT/US1995/002008 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer WO1995023427A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US08/564,256 US5791895A (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer
EP95911781A EP0702775A4 (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019940002820A KR950025850A (en) 1994-02-17 1994-02-17 Heat treatment device of thin film
KR94/2820 1994-02-17

Publications (2)

Publication Number Publication Date
WO1995023427A2 WO1995023427A2 (en) 1995-08-31
WO1995023427A3 true WO1995023427A3 (en) 1995-12-28

Family

ID=19377325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/002008 WO1995023427A2 (en) 1994-02-17 1995-02-15 Apparatus for thermal treatment of thin film wafer

Country Status (3)

Country Link
EP (1) EP0702775A4 (en)
KR (1) KR950025850A (en)
WO (1) WO1995023427A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JP5080043B2 (en) 2006-08-31 2012-11-21 新電元工業株式会社 Semiconductor device manufacturing method, semiconductor device manufacturing jig, and semiconductor device manufacturing apparatus
CN110993550B (en) * 2019-12-25 2022-12-09 北京北方华创微电子装备有限公司 Semiconductor heat treatment equipment

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591044A (en) * 1984-02-13 1986-05-27 Dainippon Screen Mfg. Co. Ltd. Apparatus for feeding wafers and the like
US5177878A (en) * 1989-05-08 1993-01-12 U.S. Philips Corporation Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US5293697A (en) * 1991-12-26 1994-03-15 Nikku Industry Co., Ltd. Vacuum drying apparatus

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE58905888D1 (en) * 1988-07-15 1993-11-18 Balzers Hochvakuum Holding device for a disc and application of the same.
ES2086429T3 (en) * 1990-04-20 1996-07-01 Applied Materials Inc FASTENING MECHANISM FOR THE DEPOSITION IN THE STEAM PHASE BY PHYSICAL PROCESS.
KR960009975B1 (en) * 1993-04-26 1996-07-25 한국베리안 주식회사 Heat treating apparatus using the second space

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4591044A (en) * 1984-02-13 1986-05-27 Dainippon Screen Mfg. Co. Ltd. Apparatus for feeding wafers and the like
US5228501A (en) * 1986-12-19 1993-07-20 Applied Materials, Inc. Physical vapor deposition clamping mechanism and heater/cooler
US5177878A (en) * 1989-05-08 1993-01-12 U.S. Philips Corporation Apparatus and method for treating flat substrate under reduced pressure in the manufacture of electronic devices
US5222310A (en) * 1990-05-18 1993-06-29 Semitool, Inc. Single wafer processor with a frame
US5293697A (en) * 1991-12-26 1994-03-15 Nikku Industry Co., Ltd. Vacuum drying apparatus

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP0702775A4 *

Also Published As

Publication number Publication date
EP0702775A1 (en) 1996-03-27
EP0702775A4 (en) 1996-07-31
WO1995023427A2 (en) 1995-08-31
KR950025850A (en) 1995-09-18

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