WO1996012297A3 - Simplified dual damascene process for multilevel metallization and interconnection structure - Google Patents

Simplified dual damascene process for multilevel metallization and interconnection structure Download PDF

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Publication number
WO1996012297A3
WO1996012297A3 PCT/US1995/012194 US9512194W WO9612297A3 WO 1996012297 A3 WO1996012297 A3 WO 1996012297A3 US 9512194 W US9512194 W US 9512194W WO 9612297 A3 WO9612297 A3 WO 9612297A3
Authority
WO
WIPO (PCT)
Prior art keywords
interconnection structure
dual damascene
damascene process
multilevel metallization
simplified dual
Prior art date
Application number
PCT/US1995/012194
Other languages
French (fr)
Other versions
WO1996012297A2 (en
Inventor
Richard J Huang
Angela Hui
Robin Cheung
Mark Chang
Ming-Ren Lin
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to EP95935091A priority Critical patent/EP0761014B1/en
Priority to DE69531244T priority patent/DE69531244T2/en
Publication of WO1996012297A2 publication Critical patent/WO1996012297A2/en
Publication of WO1996012297A3 publication Critical patent/WO1996012297A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
    • H01L21/76813—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving a partial via etch

Abstract

A semiconductor device containing an interconnection structure having a reduced interwiring spacing is produced by a modified dual damascene process. An embodiment comprises the simultaneous formation of a via and trench in a single etching step.
PCT/US1995/012194 1994-10-11 1995-09-25 Simplified dual damascene process for multilevel metallization and interconnection structure WO1996012297A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP95935091A EP0761014B1 (en) 1994-10-11 1995-09-25 Simplified dual damascene process for multilevel metallization and interconnection structure
DE69531244T DE69531244T2 (en) 1994-10-11 1995-09-25 SIMPLIFIED DOUBLE DAMASCEN PROCESS FOR THE PRODUCTION OF A MULTIPLE LAYER METALIZATION AND A CONNECTING STRUCTURE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/320,516 1994-10-11
US08/320,516 US5635423A (en) 1994-10-11 1994-10-11 Simplified dual damascene process for multi-level metallization and interconnection structure

Publications (2)

Publication Number Publication Date
WO1996012297A2 WO1996012297A2 (en) 1996-04-25
WO1996012297A3 true WO1996012297A3 (en) 1996-07-25

Family

ID=23246781

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1995/012194 WO1996012297A2 (en) 1994-10-11 1995-09-25 Simplified dual damascene process for multilevel metallization and interconnection structure

Country Status (5)

Country Link
US (1) US5635423A (en)
EP (1) EP0761014B1 (en)
DE (1) DE69531244T2 (en)
TW (1) TW293149B (en)
WO (1) WO1996012297A2 (en)

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