WO1996021273A3 - Two-transistor zero-power electrically-alterable non-volatile latch - Google Patents

Two-transistor zero-power electrically-alterable non-volatile latch Download PDF

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Publication number
WO1996021273A3
WO1996021273A3 PCT/US1996/000306 US9600306W WO9621273A3 WO 1996021273 A3 WO1996021273 A3 WO 1996021273A3 US 9600306 W US9600306 W US 9600306W WO 9621273 A3 WO9621273 A3 WO 9621273A3
Authority
WO
WIPO (PCT)
Prior art keywords
channel mos
mos transistor
node
source
control gate
Prior art date
Application number
PCT/US1996/000306
Other languages
French (fr)
Other versions
WO1996021273A2 (en
Inventor
Vikram Kowshik
Original Assignee
Actel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Actel Corp filed Critical Actel Corp
Priority to JP8521270A priority Critical patent/JPH10510124A/en
Priority to EP96907003A priority patent/EP0801844A2/en
Publication of WO1996021273A2 publication Critical patent/WO1996021273A2/en
Publication of WO1996021273A3 publication Critical patent/WO1996021273A3/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/22—Modifications for ensuring a predetermined initial state when the supply voltage has been applied
    • H03K17/24—Storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A two-transistor, zero-power, electrically-alterable non-volatile latch element comprises an input node, an output node, and an erase node. A P-Channel MOS transistor has a source connected to a source of first electrical potential, a drain connected to the output node, a control gate connected to the input node, and a floating gate capacitively coupled to the control gate. An N-Channel MOS transistor has a source connected to a source of second electrical potential lower than the first electrical potential, a drain connected to the output node, a control gate connected to the input node, and a floating gate capacitively coupled to the control gate and electrically connected to the floating gate of the P-Channel MOS transistor. The floating gates of the P-Channel MOS transistor and the N-Channel MOS transistor are capacitively coupled to the erase node via a tunnel dielectric.
PCT/US1996/000306 1995-01-06 1996-01-04 Two-transistor zero-power electrically-alterable non-volatile latch WO1996021273A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8521270A JPH10510124A (en) 1995-01-06 1996-01-04 Two-transistor power-saving electrically rewritable nonvolatile latch element
EP96907003A EP0801844A2 (en) 1995-01-06 1996-01-04 Two-transistor zero-power electrically-alterable non-volatile latch

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/369,760 US5587603A (en) 1995-01-06 1995-01-06 Two-transistor zero-power electrically-alterable non-volatile latch
US08/369,760 1995-01-06

Publications (2)

Publication Number Publication Date
WO1996021273A2 WO1996021273A2 (en) 1996-07-11
WO1996021273A3 true WO1996021273A3 (en) 1996-09-12

Family

ID=23456803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/000306 WO1996021273A2 (en) 1995-01-06 1996-01-04 Two-transistor zero-power electrically-alterable non-volatile latch

Country Status (5)

Country Link
US (1) US5587603A (en)
EP (1) EP0801844A2 (en)
JP (1) JPH10510124A (en)
CA (1) CA2198359A1 (en)
WO (1) WO1996021273A2 (en)

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Also Published As

Publication number Publication date
US5587603A (en) 1996-12-24
JPH10510124A (en) 1998-09-29
EP0801844A2 (en) 1997-10-22
WO1996021273A2 (en) 1996-07-11
CA2198359A1 (en) 1996-07-11

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