WO1996023319A3 - Wafer level prediction of thin oxide reliability - Google Patents

Wafer level prediction of thin oxide reliability Download PDF

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Publication number
WO1996023319A3
WO1996023319A3 PCT/US1996/000843 US9600843W WO9623319A3 WO 1996023319 A3 WO1996023319 A3 WO 1996023319A3 US 9600843 W US9600843 W US 9600843W WO 9623319 A3 WO9623319 A3 WO 9623319A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide
antenna
leakage current
thin oxide
charge
Prior art date
Application number
PCT/US1996/000843
Other languages
French (fr)
Other versions
WO1996023319A2 (en
Inventor
Calvin T Gabriel
Nariani R Subhash
Original Assignee
Vlsi Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vlsi Technology Inc filed Critical Vlsi Technology Inc
Publication of WO1996023319A2 publication Critical patent/WO1996023319A2/en
Publication of WO1996023319A3 publication Critical patent/WO1996023319A3/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2855—Environmental, reliability or burn-in testing
    • G01R31/2856—Internal circuit aspects, e.g. built-in test features; Test chips; Measuring material aspects, e.g. electro migration [EM]
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/282—Testing of electronic circuits specially adapted for particular applications not provided for elsewhere
    • G01R31/2831—Testing of materials or semi-finished products, e.g. semiconductor wafers or substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means

Abstract

An IC wafer includes at least one pair of antenna structures (C1L-C2L, C1S-C2S) that each include a first conductive plate (50L, 50S) formed over thick field oxide (40), coupled to a second conductive plate (30L, 30S), formed over thin oxide (20). The plates have different areas but the same antenna ratio Ar. Larger structure (C2L) overlies more weak oxide defects (110), which occur somewhat uniformly, than does smaller structure (C2S). If wafer test leakage current across larger structure (C1L-C2L) exceeds leakage current across smaller structure (C1S-C2S), the area-dependent defect indicates weak oxide. By contrast, charge-induced damage is substantially independent of antenna plate areas, whose constant Ar ratios provide constant charge density in antenna structure portions overlying the thin oxide. Thus, substantially equal wafer test leakage current for each antenna structure indicates area-independent charge-damage oxide.
PCT/US1996/000843 1995-01-20 1996-01-18 Wafer level prediction of thin oxide reliability WO1996023319A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/376,590 1995-01-20
US08/376,590 US5548224A (en) 1995-01-20 1995-01-20 Method and apparatus for wafer level prediction of thin oxide reliability

Publications (2)

Publication Number Publication Date
WO1996023319A2 WO1996023319A2 (en) 1996-08-01
WO1996023319A3 true WO1996023319A3 (en) 1996-09-26

Family

ID=23485626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1996/000843 WO1996023319A2 (en) 1995-01-20 1996-01-18 Wafer level prediction of thin oxide reliability

Country Status (2)

Country Link
US (2) US5548224A (en)
WO (1) WO1996023319A2 (en)

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US6014034A (en) * 1996-10-24 2000-01-11 Texas Instruments Incorporated Method for testing semiconductor thin gate oxide
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US5966024A (en) * 1997-01-16 1999-10-12 Advanced Micro Devices, Inc. Sensitive method of evaluating process induced damage in MOSFETs using a differential amplifier operational principle
US5869877A (en) * 1997-04-23 1999-02-09 Lam Research Corporation Methods and apparatus for detecting pattern dependent charging on a workpiece in a plasma processing system
FR2769753B1 (en) * 1997-10-09 1999-12-03 Commissariat Energie Atomique ELECTRICAL CHARACTERIZATION OF AN INSULATING LAYER COVERING A CONDUCTIVE OR SEMICONDUCTOR SUBSTRATE
US6177802B1 (en) * 1998-08-10 2001-01-23 Advanced Micro Devices, Inc. System and method for detecting defects in an interlayer dielectric of a semiconductor device using the hall-effect
US6133746A (en) * 1998-09-30 2000-10-17 Advanced Micro Devices, Inc. Method for determining a reliable oxide thickness
US6289291B1 (en) * 1998-12-17 2001-09-11 United Microelectronics Corp. Statistical method of monitoring gate oxide layer yield
US6143579A (en) * 1999-04-26 2000-11-07 Taiwan Semiconductor Manufacturing Ltd. Efficient method for monitoring gate oxide damage related to plasma etch chamber processing history
US6365426B1 (en) * 1999-06-28 2002-04-02 Agere Systems Guardian Corporation Method of determining the impact of plasma-charging damage on yield and reliability in submicron integrated circuits
US6593157B1 (en) * 1999-07-16 2003-07-15 Taiwan Semiconductor Manufacturing Company Early response to plasma/charging damage by special pattern design of active region
US6249138B1 (en) * 1999-11-23 2001-06-19 United Microelectronics Corp. Method for testing leakage current caused self-aligned silicide
US6738954B1 (en) 1999-12-08 2004-05-18 International Business Machines Corporation Method for prediction random defect yields of integrated circuits with accuracy and computation time controls
US6372525B1 (en) 1999-12-20 2002-04-16 Taiwan Semiconductor Manufacturing Company Wafer-level antenna effect detection pattern for VLSI
US6535005B1 (en) * 2000-04-26 2003-03-18 Emc Corporation Systems and methods for obtaining an electrical characteristics of a circuit board assembly process
US6824739B1 (en) * 2000-11-03 2004-11-30 Agere Systems Inc. Oxidation sensor for an electrical circuit and a method of manufacture therefor
US6958863B2 (en) * 2001-01-30 2005-10-25 Olympus Corporation Image pickup system
US7802141B2 (en) * 2004-03-05 2010-09-21 Denso Corporation Semiconductor device having one-chip microcomputer and over-voltage application testing method
US7379924B1 (en) * 2004-12-01 2008-05-27 Advanced Micro Devices, Inc. Quantifying and predicting the impact of line edge roughness on device reliability and performance
US7612371B2 (en) * 2006-01-17 2009-11-03 International Business Machines Corporation Structure to monitor arcing in the processing steps of metal layer build on silicon-on-insulator semiconductors
US20070271540A1 (en) * 2006-05-16 2007-11-22 International Business Machines Corporation Structure and method for reducing susceptibility to charging damage in soi designs
US9117045B2 (en) * 2008-02-14 2015-08-25 International Business Machines Coporation System and method to predict chip IDDQ and control leakage components
KR20100002596A (en) * 2008-06-30 2010-01-07 삼성전자주식회사 Semiconductor device and method of manufacturing the same
US20100181847A1 (en) * 2009-01-22 2010-07-22 Shen-Yu Huang Method for reducing supply voltage drop in digital circuit block and related layout architecture
US8674352B2 (en) * 2012-02-28 2014-03-18 Texas Instruments Incorporated Overvoltage testing apparatus
CN104101824B (en) * 2014-07-24 2017-06-27 上海华力微电子有限公司 The method of monitoring pattern chip gate oxidation layer surface

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US4542340A (en) * 1982-12-30 1985-09-17 Ibm Corporation Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
US4789825A (en) * 1986-05-14 1988-12-06 American Telephone And Telegraph Co., At&T Bell Laboratories Integrated circuit with channel length indicator
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US5304925A (en) * 1990-11-28 1994-04-19 Seiko Epson Corporation Semiconductor device

Also Published As

Publication number Publication date
US5548224A (en) 1996-08-20
US5638006A (en) 1997-06-10
WO1996023319A2 (en) 1996-08-01

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