WO1996024985A1 - A novel logic family employing two-terminal chalcogenide switches as the logic gates therein - Google Patents
A novel logic family employing two-terminal chalcogenide switches as the logic gates therein Download PDFInfo
- Publication number
- WO1996024985A1 WO1996024985A1 PCT/US1996/000602 US9600602W WO9624985A1 WO 1996024985 A1 WO1996024985 A1 WO 1996024985A1 US 9600602 W US9600602 W US 9600602W WO 9624985 A1 WO9624985 A1 WO 9624985A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- logic
- terminal
- switches
- threshold
- logic family
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96902699A EP0809888B1 (en) | 1995-02-10 | 1996-01-17 | A novel logic family employing two-terminal chalcogenide switches as the logic gates therein |
CA002211438A CA2211438C (en) | 1995-02-10 | 1996-01-17 | A novel logic family employing two-terminal chalcogenide switches as the logic gates therein |
AU47007/96A AU4700796A (en) | 1995-02-10 | 1996-01-17 | A novel logic family employing two-terminal chalcogenide switches as the logic gates therein |
DE69630875T DE69630875T2 (en) | 1995-02-10 | 1996-01-17 | NEW LOGIC FAMILY WITH BIPOLAR CHALCOGENIDE SWITCHES AS A LOGICAL GATE |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/386,902 US5543737A (en) | 1995-02-10 | 1995-02-10 | Logical operation circuit employing two-terminal chalcogenide switches |
US08/386,902 | 1995-02-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1996024985A1 true WO1996024985A1 (en) | 1996-08-15 |
Family
ID=23527554
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/000602 WO1996024985A1 (en) | 1995-02-10 | 1996-01-17 | A novel logic family employing two-terminal chalcogenide switches as the logic gates therein |
Country Status (7)
Country | Link |
---|---|
US (1) | US5543737A (en) |
EP (1) | EP0809888B1 (en) |
KR (1) | KR100460941B1 (en) |
AU (1) | AU4700796A (en) |
CA (1) | CA2211438C (en) |
DE (1) | DE69630875T2 (en) |
WO (1) | WO1996024985A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1326158A2 (en) * | 1995-10-24 | 2003-07-09 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US9336180B2 (en) | 2011-04-07 | 2016-05-10 | Via Technologies, Inc. | Microprocessor that makes 64-bit general purpose registers available in MSR address space while operating in non-64-bit mode |
Families Citing this family (95)
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US6140838A (en) * | 1995-04-21 | 2000-10-31 | Johnson; Mark B. | High density and high speed magneto-electronic logic family |
US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
US5694054A (en) * | 1995-11-28 | 1997-12-02 | Energy Conversion Devices, Inc. | Integrated drivers for flat panel displays employing chalcogenide logic elements |
US7935951B2 (en) * | 1996-10-28 | 2011-05-03 | Ovonyx, Inc. | Composite chalcogenide materials and devices |
US6555860B2 (en) | 2000-09-29 | 2003-04-29 | Intel Corporation | Compositionally modified resistive electrode |
US6638820B2 (en) | 2001-02-08 | 2003-10-28 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices |
US6727192B2 (en) | 2001-03-01 | 2004-04-27 | Micron Technology, Inc. | Methods of metal doping a chalcogenide material |
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US7102150B2 (en) | 2001-05-11 | 2006-09-05 | Harshfield Steven T | PCRAM memory cell and method of making same |
US6951805B2 (en) | 2001-08-01 | 2005-10-04 | Micron Technology, Inc. | Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry |
US6737312B2 (en) | 2001-08-27 | 2004-05-18 | Micron Technology, Inc. | Method of fabricating dual PCRAM cells sharing a common electrode |
US6784018B2 (en) | 2001-08-29 | 2004-08-31 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry |
US6955940B2 (en) | 2001-08-29 | 2005-10-18 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices |
US6881623B2 (en) | 2001-08-29 | 2005-04-19 | Micron Technology, Inc. | Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device |
US20030047765A1 (en) * | 2001-08-30 | 2003-03-13 | Campbell Kristy A. | Stoichiometry for chalcogenide glasses useful for memory devices and method of formation |
US6815818B2 (en) | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
US6791859B2 (en) | 2001-11-20 | 2004-09-14 | Micron Technology, Inc. | Complementary bit PCRAM sense amplifier and method of operation |
US6873538B2 (en) | 2001-12-20 | 2005-03-29 | Micron Technology, Inc. | Programmable conductor random access memory and a method for writing thereto |
US6909656B2 (en) | 2002-01-04 | 2005-06-21 | Micron Technology, Inc. | PCRAM rewrite prevention |
US20030143782A1 (en) | 2002-01-31 | 2003-07-31 | Gilton Terry L. | Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures |
US6867064B2 (en) | 2002-02-15 | 2005-03-15 | Micron Technology, Inc. | Method to alter chalcogenide glass for improved switching characteristics |
US6791885B2 (en) | 2002-02-19 | 2004-09-14 | Micron Technology, Inc. | Programmable conductor random access memory and method for sensing same |
US6809362B2 (en) | 2002-02-20 | 2004-10-26 | Micron Technology, Inc. | Multiple data state memory cell |
US7087919B2 (en) | 2002-02-20 | 2006-08-08 | Micron Technology, Inc. | Layered resistance variable memory device and method of fabrication |
US7151273B2 (en) | 2002-02-20 | 2006-12-19 | Micron Technology, Inc. | Silver-selenide/chalcogenide glass stack for resistance variable memory |
US6891749B2 (en) | 2002-02-20 | 2005-05-10 | Micron Technology, Inc. | Resistance variable ‘on ’ memory |
US6937528B2 (en) | 2002-03-05 | 2005-08-30 | Micron Technology, Inc. | Variable resistance memory and method for sensing same |
US6849868B2 (en) | 2002-03-14 | 2005-02-01 | Micron Technology, Inc. | Methods and apparatus for resistance variable material cells |
US6858482B2 (en) * | 2002-04-10 | 2005-02-22 | Micron Technology, Inc. | Method of manufacture of programmable switching circuits and memory cells employing a glass layer |
US6855975B2 (en) | 2002-04-10 | 2005-02-15 | Micron Technology, Inc. | Thin film diode integrated with chalcogenide memory cell |
US6864500B2 (en) | 2002-04-10 | 2005-03-08 | Micron Technology, Inc. | Programmable conductor memory cell structure |
US6825135B2 (en) | 2002-06-06 | 2004-11-30 | Micron Technology, Inc. | Elimination of dendrite formation during metal/chalcogenide glass deposition |
US6890790B2 (en) | 2002-06-06 | 2005-05-10 | Micron Technology, Inc. | Co-sputter deposition of metal-doped chalcogenides |
US7015494B2 (en) | 2002-07-10 | 2006-03-21 | Micron Technology, Inc. | Assemblies displaying differential negative resistance |
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US7018863B2 (en) | 2002-08-22 | 2006-03-28 | Micron Technology, Inc. | Method of manufacture of a resistance variable memory cell |
US7364644B2 (en) | 2002-08-29 | 2008-04-29 | Micron Technology, Inc. | Silver selenide film stoichiometry and morphology control in sputter deposition |
US6864521B2 (en) * | 2002-08-29 | 2005-03-08 | Micron Technology, Inc. | Method to control silver concentration in a resistance variable memory element |
US6856002B2 (en) * | 2002-08-29 | 2005-02-15 | Micron Technology, Inc. | Graded GexSe100-x concentration in PCRAM |
US6831019B1 (en) | 2002-08-29 | 2004-12-14 | Micron Technology, Inc. | Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes |
US6867114B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology Inc. | Methods to form a memory cell with metal-rich metal chalcogenide |
US7163837B2 (en) * | 2002-08-29 | 2007-01-16 | Micron Technology, Inc. | Method of forming a resistance variable memory element |
US7294527B2 (en) | 2002-08-29 | 2007-11-13 | Micron Technology Inc. | Method of forming a memory cell |
US6867996B2 (en) | 2002-08-29 | 2005-03-15 | Micron Technology, Inc. | Single-polarity programmable resistance-variable memory element |
US7010644B2 (en) | 2002-08-29 | 2006-03-07 | Micron Technology, Inc. | Software refreshed memory device and method |
US6985377B2 (en) * | 2002-10-15 | 2006-01-10 | Nanochip, Inc. | Phase change media for high density data storage |
US7085155B2 (en) * | 2003-03-10 | 2006-08-01 | Energy Conversion Devices, Inc. | Secured phase-change devices |
US7227170B2 (en) * | 2003-03-10 | 2007-06-05 | Energy Conversion Devices, Inc. | Multiple bit chalcogenide storage device |
US6813178B2 (en) | 2003-03-12 | 2004-11-02 | Micron Technology, Inc. | Chalcogenide glass constant current device, and its method of fabrication and operation |
US7022579B2 (en) | 2003-03-14 | 2006-04-04 | Micron Technology, Inc. | Method for filling via with metal |
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US7061004B2 (en) | 2003-07-21 | 2006-06-13 | Micron Technology, Inc. | Resistance variable memory elements and methods of formation |
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US7153721B2 (en) * | 2004-01-28 | 2006-12-26 | Micron Technology, Inc. | Resistance variable memory elements based on polarized silver-selenide network growth |
US7105864B2 (en) * | 2004-01-29 | 2006-09-12 | Micron Technology, Inc. | Non-volatile zero field splitting resonance memory |
US7583551B2 (en) | 2004-03-10 | 2009-09-01 | Micron Technology, Inc. | Power management control and controlling memory refresh operations |
US7098068B2 (en) | 2004-03-10 | 2006-08-29 | Micron Technology, Inc. | Method of forming a chalcogenide material containing device |
US20050232061A1 (en) | 2004-04-16 | 2005-10-20 | Rust Thomas F | Systems for writing and reading highly resolved domains for high density data storage |
US7379412B2 (en) | 2004-04-16 | 2008-05-27 | Nanochip, Inc. | Methods for writing and reading highly resolved domains for high density data storage |
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US7354793B2 (en) | 2004-08-12 | 2008-04-08 | Micron Technology, Inc. | Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element |
US7326950B2 (en) | 2004-07-19 | 2008-02-05 | Micron Technology, Inc. | Memory device with switching glass layer |
US7190048B2 (en) | 2004-07-19 | 2007-03-13 | Micron Technology, Inc. | Resistance variable memory device and method of fabrication |
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US7895560B2 (en) * | 2006-10-02 | 2011-02-22 | William Stuart Lovell | Continuous flow instant logic binary circuitry actively structured by code-generated pass transistor interconnects |
US7969769B2 (en) * | 2007-03-15 | 2011-06-28 | Ovonyx, Inc. | Multi-terminal chalcogenide logic circuits |
US8467236B2 (en) | 2008-08-01 | 2013-06-18 | Boise State University | Continuously variable resistor |
US20100090189A1 (en) * | 2008-09-15 | 2010-04-15 | Savransky Semyon D | Nanoscale electrical device |
US8148707B2 (en) | 2008-12-30 | 2012-04-03 | Stmicroelectronics S.R.L. | Ovonic threshold switch film composition for TSLAGS material |
US8377741B2 (en) * | 2008-12-30 | 2013-02-19 | Stmicroelectronics S.R.L. | Self-heating phase change memory cell architecture |
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KR102544160B1 (en) * | 2016-09-19 | 2023-06-16 | 에스케이하이닉스 주식회사 | Voltage Controlling Circuit |
US11322202B1 (en) | 2021-01-11 | 2022-05-03 | International Business Machines Corporation | Semiconductor logic circuits including a non-volatile memory cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599705A (en) * | 1979-12-13 | 1986-07-08 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4731610A (en) * | 1986-01-21 | 1988-03-15 | Ovonic Imaging Systems, Inc. | Balanced drive electronic matrix system and method of operating the same |
US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4845535A (en) * | 1987-01-23 | 1989-07-04 | Hiroshima University | Light emitting semiconductor device |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4845533A (en) * | 1986-08-22 | 1989-07-04 | Energy Conversion Devices, Inc. | Thin film electrical devices with amorphous carbon electrodes and method of making same |
-
1995
- 1995-02-10 US US08/386,902 patent/US5543737A/en not_active Expired - Lifetime
-
1996
- 1996-01-17 EP EP96902699A patent/EP0809888B1/en not_active Expired - Lifetime
- 1996-01-17 KR KR1019970705252A patent/KR100460941B1/en not_active IP Right Cessation
- 1996-01-17 DE DE69630875T patent/DE69630875T2/en not_active Expired - Fee Related
- 1996-01-17 WO PCT/US1996/000602 patent/WO1996024985A1/en active IP Right Grant
- 1996-01-17 CA CA002211438A patent/CA2211438C/en not_active Expired - Fee Related
- 1996-01-17 AU AU47007/96A patent/AU4700796A/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4599705A (en) * | 1979-12-13 | 1986-07-08 | Energy Conversion Devices, Inc. | Programmable cell for use in programmable electronic arrays |
US4731610A (en) * | 1986-01-21 | 1988-03-15 | Ovonic Imaging Systems, Inc. | Balanced drive electronic matrix system and method of operating the same |
US4782340A (en) * | 1986-08-22 | 1988-11-01 | Energy Conversion Devices, Inc. | Electronic arrays having thin film line drivers |
US4845535A (en) * | 1987-01-23 | 1989-07-04 | Hiroshima University | Light emitting semiconductor device |
Non-Patent Citations (1)
Title |
---|
See also references of EP0809888A4 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1326158A2 (en) * | 1995-10-24 | 2003-07-09 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
EP1326158A3 (en) * | 1995-10-24 | 2004-05-06 | Energy Conversion Devices, Inc. | Second-layer phase change memory array on top of a logic device |
US9336180B2 (en) | 2011-04-07 | 2016-05-10 | Via Technologies, Inc. | Microprocessor that makes 64-bit general purpose registers available in MSR address space while operating in non-64-bit mode |
Also Published As
Publication number | Publication date |
---|---|
EP0809888A4 (en) | 1999-09-08 |
KR19980701855A (en) | 1998-06-25 |
DE69630875T2 (en) | 2004-09-02 |
DE69630875D1 (en) | 2004-01-08 |
EP0809888A1 (en) | 1997-12-03 |
EP0809888B1 (en) | 2003-11-26 |
US5543737A (en) | 1996-08-06 |
AU4700796A (en) | 1996-08-27 |
KR100460941B1 (en) | 2005-04-08 |
CA2211438C (en) | 2004-11-23 |
CA2211438A1 (en) | 1996-08-15 |
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