WO1997003224A1 - A plasma enhanced chemical processing reactor and method - Google Patents
A plasma enhanced chemical processing reactor and method Download PDFInfo
- Publication number
- WO1997003224A1 WO1997003224A1 PCT/US1996/010705 US9610705W WO9703224A1 WO 1997003224 A1 WO1997003224 A1 WO 1997003224A1 US 9610705 W US9610705 W US 9610705W WO 9703224 A1 WO9703224 A1 WO 9703224A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma
- wafer
- process chamber
- reactor
- support
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3322—Problems associated with coating
Definitions
- two arm members 21a and 21b extending toward one wall of the process chamber 16 are employed as depicted in Figure 5b; however, it is to be understood that the number of arm members 21, and their position where attached to the pro ⁇ ess chamber 16, may vary.
- Arm members 21a and 21b are each formed with a longitudinally extending bore 60 as illustrated in Figure 5b.
- the bore of one arm member 21a provides a conduit from the support body 50 for the electrical connectors 62 and 64 which couple the electrodes of the wafer support 20 to the voltage source 74. Further, electrical connectors 66 and 68 couple the r.f. source 23 to the electrodes.
- the gas source 76 and the fluid source 78 for the electrodes assembly are connected to the support body 50 through conduits 72 and 74, respectively, which extend through the bore 60 of arm member 21b.
- Figure 5a illustrates the use of one arm member 21 mounted to process chamber wall 16 whereby the fluid source 78, gas source 76, dc and r.f. sources 74 and 23 and their respective connections extend through the bore of arm member 21 to the wafer support 20.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96922534A EP0839217B1 (en) | 1995-07-10 | 1996-06-21 | A plasma enhanced chemical processing reactor and method |
DE69636286T DE69636286T2 (en) | 1995-07-10 | 1996-06-21 | PLASMA-SUPPORTED CHEMICAL REACTOR AND METHOD |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50049395A | 1995-07-10 | 1995-07-10 | |
US08/500,493 | 1995-07-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1997003224A1 true WO1997003224A1 (en) | 1997-01-30 |
Family
ID=23989658
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1996/010705 WO1997003224A1 (en) | 1995-07-10 | 1996-06-21 | A plasma enhanced chemical processing reactor and method |
Country Status (9)
Country | Link |
---|---|
US (4) | US6001267A (en) |
EP (1) | EP0839217B1 (en) |
JP (1) | JP3701390B2 (en) |
KR (1) | KR100241171B1 (en) |
CN (1) | CN1160479C (en) |
AT (1) | ATE331053T1 (en) |
DE (1) | DE69636286T2 (en) |
TW (1) | TW283250B (en) |
WO (1) | WO1997003224A1 (en) |
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US5994662A (en) * | 1997-05-29 | 1999-11-30 | Applied Materials, Inc. | Unique baffle to deflect remote plasma clean gases |
US6083344A (en) * | 1997-05-29 | 2000-07-04 | Applied Materials, Inc. | Multi-zone RF inductively coupled source configuration |
US6109206A (en) * | 1997-05-29 | 2000-08-29 | Applied Materials, Inc. | Remote plasma source for chamber cleaning |
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US6189483B1 (en) | 1997-05-29 | 2001-02-20 | Applied Materials, Inc. | Process kit |
US6286451B1 (en) | 1997-05-29 | 2001-09-11 | Applied Materials, Inc. | Dome: shape and temperature controlled surfaces |
US6375750B1 (en) | 1995-07-10 | 2002-04-23 | Applied Materials, Inc. | Plasma enhanced chemical processing reactor and method |
US7651587B2 (en) | 2005-08-11 | 2010-01-26 | Applied Materials, Inc. | Two-piece dome with separate RF coils for inductively coupled plasma reactors |
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US7537672B1 (en) | 1999-05-06 | 2009-05-26 | Tokyo Electron Limited | Apparatus for plasma processing |
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US7651587B2 (en) | 2005-08-11 | 2010-01-26 | Applied Materials, Inc. | Two-piece dome with separate RF coils for inductively coupled plasma reactors |
CN113106419A (en) * | 2020-01-10 | 2021-07-13 | 皮考逊公司 | Substrate processing apparatus and method |
Also Published As
Publication number | Publication date |
---|---|
DE69636286T2 (en) | 2007-04-12 |
US5792272A (en) | 1998-08-11 |
EP0839217A1 (en) | 1998-05-06 |
CN1189859A (en) | 1998-08-05 |
ATE331053T1 (en) | 2006-07-15 |
US6375750B1 (en) | 2002-04-23 |
KR970008401A (en) | 1997-02-24 |
TW283250B (en) | 1996-08-11 |
JPH09167762A (en) | 1997-06-24 |
US6001267A (en) | 1999-12-14 |
DE69636286D1 (en) | 2006-08-03 |
EP0839217A4 (en) | 2001-04-04 |
EP0839217B1 (en) | 2006-06-21 |
KR100241171B1 (en) | 2000-02-01 |
CN1160479C (en) | 2004-08-04 |
JP3701390B2 (en) | 2005-09-28 |
US6178918B1 (en) | 2001-01-30 |
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