WO1998006135A3 - Electron devices comprising a thin-film electron emitter - Google Patents

Electron devices comprising a thin-film electron emitter Download PDF

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Publication number
WO1998006135A3
WO1998006135A3 PCT/IB1997/000938 IB9700938W WO9806135A3 WO 1998006135 A3 WO1998006135 A3 WO 1998006135A3 IB 9700938 W IB9700938 W IB 9700938W WO 9806135 A3 WO9806135 A3 WO 9806135A3
Authority
WO
WIPO (PCT)
Prior art keywords
electron
emission area
electrons
film
emitter
Prior art date
Application number
PCT/IB1997/000938
Other languages
French (fr)
Other versions
WO1998006135A2 (en
Inventor
John Martin Shannon
Sembukuttiarachilage Rav Silva
Original Assignee
Philips Electronics Nv
Philips Norden Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electronics Nv, Philips Norden Ab filed Critical Philips Electronics Nv
Priority to JP50775698A priority Critical patent/JP4014010B2/en
Priority to EP97930707A priority patent/EP0858673B1/en
Priority to DE69716228T priority patent/DE69716228T2/en
Publication of WO1998006135A2 publication Critical patent/WO1998006135A2/en
Publication of WO1998006135A3 publication Critical patent/WO1998006135A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/308—Semiconductor cathodes, e.g. cathodes with PN junction layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Abstract

In a flat panel display or other type of electron device, a thin-film electron emitter (51) and/or emitter array (50) is formed in a semiconductor film (10) of, for example, hydrogenated amorphous and/or microcrystalline Si, SiCx, SiNy, SiOxNy or the like. An injector electrode (14) forms a potential barrier (ΖB) with the semiconductor film (10) at a back major surface (12) of the film (10). A front electrode (15) serves for biasing an emission area (11a) of the front major surface (11) at a sufficiently positive potential (V15) with respect to the injector electrode (14) as to inject electrons (e) over the barrier (ΖB) in the operation of the emitter (51) while controlling the magnitude of an electron accumulation layer (Ne) in the semiconductor film (10) at the emission area (11a). Under this bias condition the semiconductor film (10) supports a depletion layer from the injector electrode (14) to the electron accumulation layer (Ne), so establishing a field in which the electrons are heated and directed towards the emission area (11a). The electron emission area is a plane surface area (11a) free of the front electrode (15), to which it may be connected directly or by a gateable connection (G, 29). Some of the electrons from the injector electrode (14) are emitted at the emission area (11a), while others heat electrons in the accumulation layer (Ne) to stimulate their emission. The front electrode (15) extracts excess electrons not emitted from the emission area (11a). The emitter (51) is well suited for fabrication with thin-film silicon-based technology.
PCT/IB1997/000938 1996-08-02 1997-07-28 Electron devices comprising a thin-film electron emitter WO1998006135A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP50775698A JP4014010B2 (en) 1996-08-02 1997-07-28 Electronic device comprising a thin-film electron emitter
EP97930707A EP0858673B1 (en) 1996-08-02 1997-07-28 Electron devices comprising a thin-film electron emitter
DE69716228T DE69716228T2 (en) 1996-08-02 1997-07-28 ELECTRONIC DEVICES WITH THIN FILM ELECTRON EMITTER

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9616265.6A GB9616265D0 (en) 1996-08-02 1996-08-02 Electron devices
GB9616265.6 1996-08-02

Publications (2)

Publication Number Publication Date
WO1998006135A2 WO1998006135A2 (en) 1998-02-12
WO1998006135A3 true WO1998006135A3 (en) 1998-03-19

Family

ID=10797922

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB1997/000938 WO1998006135A2 (en) 1996-08-02 1997-07-28 Electron devices comprising a thin-film electron emitter

Country Status (6)

Country Link
US (1) US6046542A (en)
EP (1) EP0858673B1 (en)
JP (1) JP4014010B2 (en)
DE (1) DE69716228T2 (en)
GB (1) GB9616265D0 (en)
WO (1) WO1998006135A2 (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6351254B2 (en) 1998-07-06 2002-02-26 The Regents Of The University Of California Junction-based field emission structure for field emission display
FR2793602B1 (en) 1999-05-12 2001-08-03 Univ Claude Bernard Lyon METHOD AND DEVICE FOR EXTRACTING ELECTRONS IN A VACUUM AND EMISSION CATHODES FOR SUCH A DEVICE
JP3863325B2 (en) * 1999-09-10 2006-12-27 株式会社日立製作所 Image display device
DE60113245T2 (en) * 2001-07-06 2006-06-29 Ict, Integrated Circuit Testing Gmbh Electron emission apparatus
US6806630B2 (en) 2002-01-09 2004-10-19 Hewlett-Packard Development Company, L.P. Electron emitter device for data storage applications and method of manufacture
JP3841790B2 (en) * 2002-03-06 2006-11-01 シャープ株式会社 Photoelectric conversion element and manufacturing method thereof
TW201526330A (en) * 2013-09-30 2015-07-01 Lg Chemical Ltd Organic light emitting device
TWI568052B (en) * 2013-09-30 2017-01-21 樂金顯示科技股份有限公司 Method for preparing organic light emitting device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516146A (en) * 1981-11-06 1985-05-07 U.S. Philips Corporation Electron sources and equipment having electron sources
EP0532019A1 (en) * 1991-09-13 1993-03-17 Canon Kabushiki Kaisha Semiconductor electron emission device
FR2717946A1 (en) * 1994-03-22 1995-09-29 Futaba Denshi Kogyo Kk Resistive element of hydrogenated amorphous silicon

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL184589C (en) * 1979-07-13 1989-09-01 Philips Nv Semiconductor device for generating an electron beam and method of manufacturing such a semiconductor device.
JPH02503728A (en) * 1988-03-25 1990-11-01 トムソン‐セーエスエフ Method for manufacturing a field emission source and its application to manufacturing an emitter array
JP2625349B2 (en) * 1993-06-17 1997-07-02 日本電気株式会社 Thin film cold cathode
GB9313841D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd An electro-optic device
US5541478A (en) * 1994-03-04 1996-07-30 General Motors Corporation Active matrix vacuum fluorescent display using pixel isolation

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516146A (en) * 1981-11-06 1985-05-07 U.S. Philips Corporation Electron sources and equipment having electron sources
EP0532019A1 (en) * 1991-09-13 1993-03-17 Canon Kabushiki Kaisha Semiconductor electron emission device
FR2717946A1 (en) * 1994-03-22 1995-09-29 Futaba Denshi Kogyo Kk Resistive element of hydrogenated amorphous silicon

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
I. VAC. SCI. TECHNOL., Volume B14, No. 3, May 1996, KUNIYOSHI YOKOO et al., "Experiments of Highly Emissive Metal-Oxide-Semiconductor Electron Tunneling Cathode", pages 2096-2099. *
PATENT ABSTRACTS OF JAPAN, Vol. 95, No. 1; & JP,A,06 283 092 (OLYMPUS OPTICAL CO LTD), 7 October 1994. *

Also Published As

Publication number Publication date
WO1998006135A2 (en) 1998-02-12
JP4014010B2 (en) 2007-11-28
US6046542A (en) 2000-04-04
DE69716228T2 (en) 2003-09-11
EP0858673B1 (en) 2002-10-09
EP0858673A2 (en) 1998-08-19
GB9616265D0 (en) 1996-09-11
JPH11513186A (en) 1999-11-09
DE69716228D1 (en) 2002-11-14

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