WO1998011767A1 - Ensemble dispositif de commutation a semi-conducteur pour inverseur au silicium - Google Patents

Ensemble dispositif de commutation a semi-conducteur pour inverseur au silicium Download PDF

Info

Publication number
WO1998011767A1
WO1998011767A1 PCT/US1997/015031 US9715031W WO9811767A1 WO 1998011767 A1 WO1998011767 A1 WO 1998011767A1 US 9715031 W US9715031 W US 9715031W WO 9811767 A1 WO9811767 A1 WO 9811767A1
Authority
WO
WIPO (PCT)
Prior art keywords
switch
solid state
stack
valve
thyristor
Prior art date
Application number
PCT/US1997/015031
Other languages
English (en)
Inventor
Colin E. J. Bowler
Joe Cely
Jackie L. Winn
Robert D. Mcray
Thomas C. Moeller
Vinod N. Bapat
Original Assignee
Abb Power T & D Company Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Power T & D Company Inc. filed Critical Abb Power T & D Company Inc.
Priority to AU40920/97A priority Critical patent/AU4092097A/en
Publication of WO1998011767A1 publication Critical patent/WO1998011767A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/20536—Modifications to facilitate cooling, ventilating, or heating for racks or cabinets of standardised dimensions, e.g. electronic racks for aircraft or telecommunication equipment
    • H05K7/20554—Forced ventilation of a gaseous coolant
    • H05K7/20572—Forced ventilation of a gaseous coolant within cabinets for removing heat from sub-racks, e.g. plenum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/112—Mixed assemblies
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/20—Modifications to facilitate cooling, ventilating, or heating
    • H05K7/2089—Modifications to facilitate cooling, ventilating, or heating for power electronics, e.g. for inverters for controlling motor
    • H05K7/20909—Forced ventilation, e.g. on heat dissipaters coupled to components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Definitions

  • the present invention relates to a silicon transfer switch for providing an uninterrupted transfer of power between two sources in the event of a voltage sag or disturbance in one of the power sources. More specifically, the present invention relates to a silicon transfer switch having an improved arrangement of solid state switching components in series, wherein a compact and modular arrangement of electrical components and heat sinks provides for optimized cooling with minimal pressure losses in the flow of cooling air, as well as a low noise environment.
  • the controller electronics in the controller box provides the necessary input and output information to turn the switch device in one of the switch boxes to an "on” position, while turning the switch device in the other box to an "off” position so that the power source flowing into the "on" switch is supplied to the load.
  • transfer from the preferred AC power source to the alternate AC power source will occur within a fraction of a power cycle.
  • controlling and monitoring the operation of the solid state switch devices must be done in a significantly elevated voltage environment.
  • control/monitoring in such an environment includes at least three key aspects, namely, thyristor failure detection, simultaneous thyristor triggering and thyristor temperature monitoring.
  • thyristor failure detection in a high voltage anti-parallel switch is difficult when detection is to be made while the switch is conducting. This condition requires that the shorted thyristor condition be established from signals indicating elevated current flow in both directions.
  • Conventional current monitoring incorporated an air-core current transformer type winding. Such a winding, however, required transmission of the coil voltage against the high common mode potential difference at die computer or monitor circuit, where signal analysis can be performed on an instant by instant basis.
  • a current-pulse of a few amperes is applied during forward voltage bias conditions.
  • a liquid cooling system is known to be an alternative to an air cooled system to maintain operation of the switch below the maximum sustainable temperature for the electronic switch components.
  • liquid cooling systems also have known disadvantages that make operation of such a system complex and costly. Since fluids used in liquid cooling systems are conductors of electricity (as opposed to air, which is a known insulator), the cooling system must be insulated from the electronic switch components. In view of the cumbersome arrangement of the component stacks, it is burdensome, as well as costly, to install and maintain the cooling apparatus in addition to the insulation apparatus to shield the cooling system components from the electronic components that are designed to protect.
  • the solid state switch devices are thyristors.
  • thyristors are air cooled by a flow of cooling air across heat sinks that are mechanically coupled to the thyristors.
  • the silicon transfer switch operates to detect a voltage sag or disturbance in a preferred power source 18 supplied to a downstream load (not shown), turn the power source 18 to an "off” position, and turn an alternative power source 20 to an "on” position such that power supply to the downstream load is transferred to the alternative power source without interruption of service at the load.
  • the present invention is not intended to be limited to a silicon transfer switch having only two switch boxes 10 and any number of switch boxes can be used in the switch depending upon the power requirements.
  • an industrial power source for delivering high tension voltage is distributed in a three phase (A/B/C) package through three separate inputs.
  • the heat sink is positioned in place with respect to the thyristor by the insertion of dowel pins into the matching holes of the heat sink and thryistor and any sliding between the heat sink and thyristor is obviated and each column is maintained in coplanarity relative to the thyristor center line.
  • the tenon joint is comprised of a slit in each of the two inner ligaments of each heat sink, the slit being about two inches in length and about 0.25 inches deep.
  • a filler piece is disposed in the slits between opposed ligaments and secured into position by an epoxy glue.
  • the heat sinks in one of the columns of the half-stack thyristor valve is mechanically coupled to the opposing heat-sinks in the other column by clamps 36.
  • the solid state switch components such as the thyristors described herein, must be packaged under substantial pressure.
  • the solid state switch components must be packed under a pressure of up to about 20,000 pounds (10 tons).
  • the thyristor columns are clamped together as shown in FIGS. 4 and 7.
  • a pair of opposed outer pressure plates 38 are disposed at the top and bottom of each column. As shown, the pressure plates 38 cover both of the columns in a half-stack thyristor valve.
  • Another pair of opposed inner pressure plates 40 are disposed in each column adjacent to the top and bottom heat sinks 24 such that the pressure plates contact and rest on the outer ends of the ligaments 30 of these heat sinks.
  • the inner pressure plates 40 have rounded corners to reduce local electric stress.
  • the opposed outer pressure plates 38 are clamped together by four electrically insulated long tension rods 42 on each side of the half-stack thyristor valve and corresponding tension rod nuts 44. Insulated material is required for the tension rods to provide maximum impulse strength of the insulated valve arrangement from ground, and to reduce the size, as well as the mechanical stress and deflection, of the outer pressure plates.
  • a portable guide rail assembly 62 is mechanically coupled to the stationary guide rails 60 and the half-stacks are delivered to the portable guide rail assembly such that roller wheels 58 are positioned into the portable guide rail assembly 62 and the half-stack is rolled into position in the valve compartment 12 along the stationary guide rails 60.
  • a stop (not shown) at the end of the end of the stationary guide rails 60 limits the travel of the half- stack in the front and back sections of the valve compartment.
  • valve stack thyristor valve in a known manner such that the power supply is input into the half-stack thyristor valve.
  • a similar arrangement of electrical connection components is provided for hooking up a half-stack thyristor valve into the rear portion of the valve compartment 12, as well as into the front and rear portions of the other valve compartments in the switch box.
  • the valve compartments and the bus compartments of the switch box will be fitted with exterior walls (not shown) that are sealed to prevent contamination of the valve compartments from the environment outside the switch box. Referring to FIGS.
  • FIGS. 4 and 7-10 four printed circuit boards 72 are contained within a half-stack thryistor valve, wherein one of the circuit boards 72 is disposed in the stack adjacent a pair of anti-parallel thyristors 22.
  • Two gate firing tubes 74 are mechanically coupled to the front side of a half-stack thyristor valve by plastic retaining clips 75 on the top and bottom circuit boards in the stack (FIG. 1). It should be noted that the gate firing tubes 74 have been removed from the illustration in FIG. 9 for clarity.
  • a main insulating current transformer is disposed in transformer boxes 76.
  • the chimney-like effect of the flow of cooling air into the plenum provides for a substantially uniform flow of cooling air 91 into the entrance of each of the heat sinks at the rear of the baffle and across the fins of the heat sinks. Temperature and pressure gradients in the flow of cooling air inside the sealed plenum 84 are minimized such that a substantially even flow of cooling air 91 is distributed into all of the heat sinks from the top to the bottom of the columns within a half-stack thyristor valve.
  • the flow of cooling air 91 exits the heat sinks as a flow of hot air 94 into a hot air side plenum 96.
  • the flow of hot air 94 is exhausted into a sealed hot air return exhaust duct 98.
  • the hot air return exhaust duct 98 is in flow communication with a heat exchanger 100 disposed in the air blower chamber 86, with one heat exchanger 100 above each half-stack thyristor valve 14.
  • Ambient outside air 102 from outside the switch box 10 is drawn into the heat exchanger 100 through the cold side air inlet plenum 88. Accordingly, the high temperature air in the heat exchanger is partially cooled and exhausted out of the switch box through external air flow fan assemblies 104 arranged on a platform 106 at the top of the switch box.
  • circuit 200 is disposed on printed circuit board 72 which is shown in Figs. 4, 7 and 10 as being provided at each level of the half-stack arrangement. Since each circuit board 72 contains an identical electronic circuit, only one description of circuit 200 need be made.
  • a temperature sensor 222 is attached to heat sync 24. Temperature sensor 222 thereby provides a method of digitally transducing the heat sync temperature which temperature information will be transmitted to controller 16 at ground potential. However, in order to power temperature sensor 222, a 5 volt DC power supply is generated from a gate pulse signal produced from the regulated voltage drop of zener diode 224. This gate pulse is sustained between pulses by energizing smoothing capacitors 226 through 230. This 5 volt supply is applied to temperature sensor 222.
  • thyristors 22 fail, however, and begin conducting in both directions, the magnetic force will traverse the magnetic hysteresis loop of cores 240 and 242 from positive to negative saturation for each cycle of current. As a result, twice each cycle the core associated with the failed thyristor jumps from positive to negative or negative to positive saturation. This jump from one saturation point to another generates a small voltage on the toroidal winding (244 or 246) sufficient to light a light emitting diode 248. This light can be transmitted fiber optically and converted to a digital sense signal for simple detection by controller 16.
  • the thyristor failure detection system is very sensitive depending on the magnetic properties of the core. Core materials can be chosen that exhibit high remnant magnetic flux at very low magnetizing current levels.
  • toroidal cores 240 and 242 are formed from a nickel-iron saturable core material which comprises approximately 40 to
  • circuit 200 includes a level electronic monitoring system.
  • the sharing resistor across the level is split into a voltage divider whose voltage signal is present at terminals 250 and 252.
  • This voltage signal is current limited with resistor 254 and voltage limited with back-to-back zener diodes 256 and 258.
  • the current limited and voltage limited signal is applied to a full-wave rectifier bridge 260.
  • the DC rectified voltage output is logically OR'ed with the two voltage signals from the anti-parallel thyristor failure current detectors 240 and 242 through diodes 262 and 264.
  • the combined voltage is presented to a current limiting and voltage clamping circuit 264 to provide signal current during failure detection to a fiber optic light emitting diode 248.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Aviation & Aerospace Engineering (AREA)
  • Rectifiers (AREA)

Abstract

Inverseur au silicium (10) avec ensemble compact et modulaire de composants de commutation (14) à semi-conducteurs disposés dans les boîtes (10) de commutateurs. Les composants sont disposés en ensembles modulaires formant des demi-piles (14) de telle façon que les demi-piles peuvent être chargées et retirées avec rapidité et efficacité des compartiments (12) des boîtes (10) de commutateurs. Le système de refroidissement abaisse la température et les gradients de pression dans le flux d'air circulant en direction des composants électroniques disposés en piles (14), de façon à refroidir uniformément les composants. La disposition compacte et modulaire des composants de commutation optimise l'interconnexion électrique entre les composants, les forces de serrage mécaniques, le refroidissement, l'amorçage du dispositif de commutation à semi-conducteurs par couplage magnétique et le réglage de la température à l'intérieur du système.
PCT/US1997/015031 1996-09-16 1997-08-26 Ensemble dispositif de commutation a semi-conducteur pour inverseur au silicium WO1998011767A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU40920/97A AU4092097A (en) 1996-09-16 1997-08-26 Solid state switching device arrangement for silicon transfer switch

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US71029196A 1996-09-16 1996-09-16
US08/710,291 1996-09-16
US82185297A 1997-03-21 1997-03-21
US08/821,852 1997-03-21

Publications (1)

Publication Number Publication Date
WO1998011767A1 true WO1998011767A1 (fr) 1998-03-19

Family

ID=27108417

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/015031 WO1998011767A1 (fr) 1996-09-16 1997-08-26 Ensemble dispositif de commutation a semi-conducteur pour inverseur au silicium

Country Status (2)

Country Link
AU (1) AU4092097A (fr)
WO (1) WO1998011767A1 (fr)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628505B1 (en) 2000-07-29 2003-09-30 Biosource, Inc. Flow-through capacitor, system and method
US6781817B2 (en) 2000-10-02 2004-08-24 Biosource, Inc. Fringe-field capacitor electrode for electrochemical device
US7755872B2 (en) 2006-09-14 2010-07-13 Schweitzer Engineering Laboratories, Inc. System, method and device to preserve protection communication active during a bypass operation
DE102011001731A1 (de) * 2011-04-01 2012-10-04 Igel Elektronik Gmbh Vorrichtung zum Sanftanlauf
WO2014131720A1 (fr) * 2013-02-28 2014-09-04 Alstom Technology Ltd Système et procédé d'apport d'énergie destinés à une unité de commande de grille commandant une valve à thyristors
CN105489572A (zh) * 2015-12-04 2016-04-13 许继集团有限公司 功率元件模块及其散热器
US10755845B2 (en) 2015-03-31 2020-08-25 General Electric Technology Gmbh Top head housing
CN114144010A (zh) * 2021-11-17 2022-03-04 杭州汉安半导体有限公司 一种高压电机软起动装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684943A (en) * 1971-02-01 1972-08-15 Gen Electric Converter valve-pair arrangement
US3942586A (en) * 1973-08-14 1976-03-09 Siemens Aktiengesellschaft Cooling arrangement for flat semiconductor components
US4023616A (en) * 1974-04-08 1977-05-17 Siemens Aktiengesellschaft Thyristor cooling arrangement
US4864385A (en) * 1987-12-29 1989-09-05 Hitachi, Ltd. Power semiconductors connected antiparallel via heatsinks
US4866503A (en) * 1987-04-08 1989-09-12 Kabushiki Kaisha Toshiba Semiconductor stack
US5212619A (en) * 1989-12-03 1993-05-18 Siemens Aktiengesellschaft Method and system for protecting a gate controlled thyristor against unacceptable overvoltage

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3684943A (en) * 1971-02-01 1972-08-15 Gen Electric Converter valve-pair arrangement
US3942586A (en) * 1973-08-14 1976-03-09 Siemens Aktiengesellschaft Cooling arrangement for flat semiconductor components
US4023616A (en) * 1974-04-08 1977-05-17 Siemens Aktiengesellschaft Thyristor cooling arrangement
US4866503A (en) * 1987-04-08 1989-09-12 Kabushiki Kaisha Toshiba Semiconductor stack
US4864385A (en) * 1987-12-29 1989-09-05 Hitachi, Ltd. Power semiconductors connected antiparallel via heatsinks
US5212619A (en) * 1989-12-03 1993-05-18 Siemens Aktiengesellschaft Method and system for protecting a gate controlled thyristor against unacceptable overvoltage

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6628505B1 (en) 2000-07-29 2003-09-30 Biosource, Inc. Flow-through capacitor, system and method
US6781817B2 (en) 2000-10-02 2004-08-24 Biosource, Inc. Fringe-field capacitor electrode for electrochemical device
US7755872B2 (en) 2006-09-14 2010-07-13 Schweitzer Engineering Laboratories, Inc. System, method and device to preserve protection communication active during a bypass operation
DE102011001731A1 (de) * 2011-04-01 2012-10-04 Igel Elektronik Gmbh Vorrichtung zum Sanftanlauf
WO2014131720A1 (fr) * 2013-02-28 2014-09-04 Alstom Technology Ltd Système et procédé d'apport d'énergie destinés à une unité de commande de grille commandant une valve à thyristors
CN105027402A (zh) * 2013-02-28 2015-11-04 阿尔斯通技术有限公司 用于对基于晶闸管的阀进行控制的门极驱动单元的能量传输系统和方法
CN105027402B (zh) * 2013-02-28 2018-03-30 通用电气技术有限公司 用于对基于晶闸管的阀进行控制的门极驱动单元的能量传输系统和方法
US10755845B2 (en) 2015-03-31 2020-08-25 General Electric Technology Gmbh Top head housing
CN105489572A (zh) * 2015-12-04 2016-04-13 许继集团有限公司 功率元件模块及其散热器
CN105489572B (zh) * 2015-12-04 2018-01-23 许继集团有限公司 功率元件模块及其散热器
CN114144010A (zh) * 2021-11-17 2022-03-04 杭州汉安半导体有限公司 一种高压电机软起动装置
CN114144010B (zh) * 2021-11-17 2024-02-09 杭州汉安半导体有限公司 一种高压电机软起动装置

Also Published As

Publication number Publication date
AU4092097A (en) 1998-04-02

Similar Documents

Publication Publication Date Title
US6087800A (en) Integrated soft starter for electric motor
US9824809B2 (en) Modular transformer system
US8154830B2 (en) Apparatus for quench protection and stabilizing decay in a quasi-persistent superconducting magnet
US6459586B1 (en) Single board power supply with thermal conductors
WO1998011767A1 (fr) Ensemble dispositif de commutation a semi-conducteur pour inverseur au silicium
US8705215B2 (en) High voltage fault current limiter having immersed phase coils
KR20170084981A (ko) 선형 자기 코어 구성을 포함하는 멀티펄스 전자기 장치
US7113065B2 (en) Modular inductor for use in power electronic circuits
CA2192632C (fr) Alimentation haute tension
HU223914B1 (hu) Villamos fogyasztásmérő mérőáramkörrel és tápáramkörrel
US5587651A (en) Alternating current sensor based on parallel-plate geometry and having a conductor for providing separate self-powering
Mao et al. An 18.3 MJ charging and discharging pulsed power supply system for the Space Plasma Environment Research Facility (SPERF). I. The overall design
US4015168A (en) Current limiting device for an electrical network
RU2738257C1 (ru) Система и способ для частотно-регулируемого привода среднего напряжения без образования конденсата
JPH01270763A (ja) 可動磁石型多相リニアモータ
JPS63274371A (ja) スイッチング・レギュレータ用変圧器整流器組立体
Herlach et al. The pulsed field installation at the KU Leuven
US3470496A (en) Static inverter
US20060006848A1 (en) Universal sensor probe with adjustable members
US4685045A (en) Device for failure detection in series-connected semiconductor rectifiers
Orris et al. Improvements and performance of the Fermilab solenoid test facility
Baccaglioni et al. Design, manufacture, and test of the ATLAS magnet system run down units
Rosseel et al. The pulsed-field facility at HFML, commissioning and first results
Dinkel et al. Magnet Coil Shorted Turn Detector
Fernqvist et al. Design and verification of a 24 kA calibration head for a DCCT test facility [for LHC]

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE GH HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT UA UG UZ VN YU ZW AM AZ BY KG KZ MD RU TJ TM

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH KE LS MW SD SZ UG ZW AT BE CH DE DK ES FI FR GB GR IE IT LU MC NL PT

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
NENP Non-entry into the national phase

Ref country code: JP

Ref document number: 1998513674

Format of ref document f/p: F

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: CA