WO1998021756A1 - Sensor element - Google Patents
Sensor element Download PDFInfo
- Publication number
- WO1998021756A1 WO1998021756A1 PCT/EP1996/004947 EP9604947W WO9821756A1 WO 1998021756 A1 WO1998021756 A1 WO 1998021756A1 EP 9604947 W EP9604947 W EP 9604947W WO 9821756 A1 WO9821756 A1 WO 9821756A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sensor element
- floating gate
- sensor
- field effect
- effect transistor
- Prior art date
Links
- 230000005669 field effect Effects 0.000 claims abstract description 19
- 230000001133 acceleration Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 claims description 2
- 230000015654 memory Effects 0.000 abstract description 25
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 238000003491 array Methods 0.000 description 1
- 238000013528 artificial neural network Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 231100000289 photo-effect Toxicity 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
- G01P15/124—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by semiconductor devices comprising at least one PN junction, e.g. transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Non-Volatile Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE59608775T DE59608775D1 (en) | 1996-11-12 | 1996-11-12 | SENSOR ELEMENT |
PCT/EP1996/004947 WO1998021756A1 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
KR1019997004212A KR100319057B1 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
EP96939013A EP0922304B1 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
US09/297,925 US6141243A (en) | 1996-11-12 | 1996-11-12 | Sensor element |
JP52206598A JP3269826B2 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/EP1996/004947 WO1998021756A1 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998021756A1 true WO1998021756A1 (en) | 1998-05-22 |
Family
ID=8166396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP1996/004947 WO1998021756A1 (en) | 1996-11-12 | 1996-11-12 | Sensor element |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP3269826B2 (en) |
KR (1) | KR100319057B1 (en) |
DE (1) | DE59608775D1 (en) |
WO (1) | WO1998021756A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0990911A1 (en) * | 1998-09-29 | 2000-04-05 | Siemens Aktiengesellschaft | Micromechanical sensor based on the field effect and the use thereof |
US7180798B2 (en) | 2001-04-12 | 2007-02-20 | Fuji Electric Co., Ltd. | Semiconductor physical quantity sensing device |
DE10216016B4 (en) * | 2001-04-12 | 2010-07-08 | Fuji Electric Systems Co., Ltd. | Semiconductor device for measuring a physical quantity |
EP2466317A1 (en) * | 2010-12-17 | 2012-06-20 | Nxp B.V. | Acceleration Threshold Detection |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102320950B1 (en) * | 2020-02-13 | 2021-11-02 | 연세대학교 산학협력단 | Pressure sensing memory transistor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788581A (en) * | 1984-04-10 | 1988-11-29 | Hahn-Meitner-Institut Berlin Gmbh | MOS dosimeter |
DE4004179A1 (en) * | 1990-02-12 | 1991-08-14 | Fraunhofer Ges Forschung | INTEGRATABLE, CAPACITIVE PRESSURE SENSOR AND METHOD FOR PRODUCING THE SAME |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
JPH07115182A (en) * | 1993-10-15 | 1995-05-02 | Matsushita Electric Ind Co Ltd | Photoelectric transducer having memory function and solid-state image pickup device |
US5541878A (en) * | 1991-05-09 | 1996-07-30 | Synaptics, Incorporated | Writable analog reference voltage storage device |
-
1996
- 1996-11-12 KR KR1019997004212A patent/KR100319057B1/en not_active IP Right Cessation
- 1996-11-12 JP JP52206598A patent/JP3269826B2/en not_active Expired - Fee Related
- 1996-11-12 DE DE59608775T patent/DE59608775D1/en not_active Expired - Fee Related
- 1996-11-12 WO PCT/EP1996/004947 patent/WO1998021756A1/en active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4788581A (en) * | 1984-04-10 | 1988-11-29 | Hahn-Meitner-Institut Berlin Gmbh | MOS dosimeter |
US5343064A (en) * | 1988-03-18 | 1994-08-30 | Spangler Leland J | Fully integrated single-crystal silicon-on-insulator process, sensors and circuits |
DE4004179A1 (en) * | 1990-02-12 | 1991-08-14 | Fraunhofer Ges Forschung | INTEGRATABLE, CAPACITIVE PRESSURE SENSOR AND METHOD FOR PRODUCING THE SAME |
US5541878A (en) * | 1991-05-09 | 1996-07-30 | Synaptics, Incorporated | Writable analog reference voltage storage device |
JPH07115182A (en) * | 1993-10-15 | 1995-05-02 | Matsushita Electric Ind Co Ltd | Photoelectric transducer having memory function and solid-state image pickup device |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 095, no. 008 29 September 1995 (1995-09-29) * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0990911A1 (en) * | 1998-09-29 | 2000-04-05 | Siemens Aktiengesellschaft | Micromechanical sensor based on the field effect and the use thereof |
US7180798B2 (en) | 2001-04-12 | 2007-02-20 | Fuji Electric Co., Ltd. | Semiconductor physical quantity sensing device |
DE10216016B4 (en) * | 2001-04-12 | 2010-07-08 | Fuji Electric Systems Co., Ltd. | Semiconductor device for measuring a physical quantity |
EP2466317A1 (en) * | 2010-12-17 | 2012-06-20 | Nxp B.V. | Acceleration Threshold Detection |
Also Published As
Publication number | Publication date |
---|---|
KR100319057B1 (en) | 2001-12-29 |
JP3269826B2 (en) | 2002-04-02 |
DE59608775D1 (en) | 2002-03-28 |
JP2000515981A (en) | 2000-11-28 |
KR20000053235A (en) | 2000-08-25 |
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WO1998021756A1 (en) | Sensor element |
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