WO1998030731A1 - Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace - Google Patents
Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace Download PDFInfo
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- WO1998030731A1 WO1998030731A1 PCT/US1998/000162 US9800162W WO9830731A1 WO 1998030731 A1 WO1998030731 A1 WO 1998030731A1 US 9800162 W US9800162 W US 9800162W WO 9830731 A1 WO9830731 A1 WO 9830731A1
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- fluid
- conduit
- tubular wall
- molecules
- gas
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
Definitions
- This invention relates generally to a method and apparatus for reducing the deposition and build up of materials in a tube and, more specifically, to a method and apparatus to create a gas boundary layer on the inner surface of a tube connected to an outlet of a reaction chamber, such as a chemical vapor deposition (CVD) chamber or an etching chamber, mainly to inhibit surface chemical reactions of gases exiting the reaction chamber that cause depositions on inside surfaces of the tube.
- a reaction chamber such as a chemical vapor deposition (CVD) chamber or an etching chamber
- TEOS gas tetraethylorthosilicate or tetraethoxysilane gas
- TEOS gas is promising in the development of very large scale integration (VLSI) devices in low pressure chemical vapor deposition (LPCVD) processes.
- TEOS can also be used in plasma enhanced chemical vapor deposition processes (PECVD), sub-atmospheric chemical vapor deposition processes (SACVD), and pyrolysis processes.
- PECVD plasma enhanced chemical vapor deposition processes
- SACVD sub-atmospheric chemical vapor deposition processes
- pyrolysis processes pyrolysis processes.
- the use of TEOS gas as a source material for silicon dioxide does create some other significant problems.
- water vapor which is created in chemical vapor deposition (PCVD) processes using TEOS gas in semiconductor manufacturing processes and discharged in the effluent from the reaction chamber hydrolizes and polymerizes unreacted or undecomposed TEOS gas that is also in the effluent, thereby forming chains of polymerized TEOS molecules on the inside surfaces of pipes in the pump line and other equipment downstream of the reaction process chamber or furnace.
- the chains of polymerized TEOS molecules will continue to grow and will eventually form a solid material when they become sufficiently large.
- the solid chains of polymerized TEOS molecules will deposit and cause solid build- up on surfaces, such as on the inside surfaces of the pipes or pump line segments used to convey the effluent gas away from the reaction chambers, in vacuum pumps, and in other equipment.
- Such solid buildup in pipes, pumps, and other equipment downstream from the reaction process chamber can partially or even entirely plug the pipes, damage the pumps and other equipment, reduce vacuum conductance, and render piping, pumps, and other equipment used in the manufacturing process functionally impaired or inoperative.
- Solid buildup in the pipe segments downstream of the reaction furnace can also flake apart and fall off the piping surfaces and migrate back into the reaction process chamber to become a source of contamination in the manufacturing process that ruins or substantially degrades the substrate wafers of semiconductor chips being manufactured in the process.
- chains of polymerized TEOS molecules can be formed directly in the reaction chamber as a result of chemical reaction between TEOS gas molecules and water vapor molecules in the reaction furnace.
- relatively little of polymerized TEOS molecules will be adsorbed, thus deposited on the inside wall of the reaction chamber and most of the polymerized TEOS molecules in the reaction chamber will remain in the gas or vapor phase and will be pumped out of the reaction chamber into the pipe segments downstream of the reaction chamber.
- the polymerized TEOS molecules In order to prevent the solid chains of polymerized TEOS molecules from clogging or contaminating the manufacturing system, the polymerized TEOS molecules must be kept from solidifying or it has to removed from the piping system being used in the manufacturing process.
- a vacuum pump is connected by piping to the outlet of the chemical reaction or deposition chamber to pull the chamber pressure down to the desired reaction pressure.
- the reaction gases are introduced through an inlet into the reaction chamber where they chemically react in the vacuum to produce the desired material, such as silicon dioxide, that deposits on semiconductor substrates in the chamber.
- the reaction by-products, including the water vapor, as well as unreacted or undecomposed TEOS gas, are drawn by the vacuum pump out of the chamber.
- preventing solidification of the chains of polymerized TEOS molecules in piping leading away from the reaction chamber outlet and preventing buildup of the byproduct materials in the vacuum pump and other piping components has been an elusive goal prior to this invention.
- One common method of trying to prevent the chemical reaction between the TEOS gas and the water vapor has been to dilute TEOS gas and water vapor with another gas, such as nitrogen.
- another gas such as nitrogen.
- the nitrogen gas When the nitrogen gas injected along with source material gases into the reaction chamber, the nitrogen gas becomes a dilute gas of the semiconductor manufacturing process and is discharged from the reaction chamber along with the effluent water vapor and the unreacted on partially polymerized TEOS gas to dilute the unreacted polymerized TEOS gas and water vapor in the effluent and thereby inhibit the chemical reaction between the water vapor and TEOS gas that results in the polymerized TEOS molecules that solidify and build on the downstream pipe and pump surfaces.
- the nitrogen also reduces the concentrations (or partial gas pressures) of the TEOS gas and the water vapor such that the rate of the chemical reaction between the TEOS gas and the water vapor is reduced in the reaction chamber.
- the dilution of the source material gases injected into the reaction chamber with nitrogen or other dilution gases also reduces the speed of deposition of silicon dioxide on the silicon wafer and. therefore, reduces the yield and efficiency of the semiconductor manufacturing process.
- the nitrogen or other dilution gas can also be injected into the tubes or pipes connected downstream of the reaction furnace to dilute the water vapor and the unreacted or partially polymerized TEOS gas molecules downstream of the reaction chamber without raising the pressure or otherwise interfering with silicon dioxide formation and deposition within the reaction furnace.
- such dilution with nitrogen does not really reduce very significantly the amount of solid chains of polymerized TEOS material that deposits and builds on the inner surfaces of the tubes or pipes downstream of the reaction furnace, so such nitrogen dilution methods have not been particularly effective or beneficial.
- the apparatus of the present invention includes tubular member or structure having a generally hollow shape with two open ends, a generally cylindrically shaped wall with openings or slots in the generally cylindrical shaped wall through which a gas or fluid can flow without passing through either of the open ends, and deflectors or redirectors which create a boundary layer or wall of gas or fluid flowing along the inner surface of the apparatus w hen gas or fluid is pumped through the slots or openings in the generally cylindrical wall.
- the method of the present invention includes the steps of creating and maintaining a laminar layer or virtual wall of inert or reactive gas along the inner surface of a tube or tubes through which water vapor molecules and unreacted or undecomposed TEOS gas molecules discharged from a reaction furnace are flowing and maintaining the gas pressure within the tube or tubes high enough to keep the inert or reactive gas molecules flowing between the inner surfaces of the tube or tubes and the water vapor molecules and unreacted or undecomposed TEOS gas molecules and to keep the water vapor molecules and the unreacted or undecomposed TEOS gas molecules from contacting or residing on the inner surfaces of the tube or tubes.
- Figure 1 is a diagrammatic view of a semiconductor manufacturing system showing a reaction furnace, an exit pump line segment, a pump line extension segment, the gas boundary layer apparatus of Figure 1 inserted into the exit pump line segment and the pump line extension segment, and a source for the gas being used with the gas boundary layer apparatus;
- Figure 2 is a cutaway elevation view of a portion of the reaction furnace, the exit pump line segment, the pump line extension segment, and the gas boundary layer apparatus of Figure 1, showing the gas boundary layer apparatus of Figure 1 in more detail, and showing nonalignment of the siots on the middle section in relation to the slots on the downstream spacer ring;
- Figure 3 is cross-sectional view of the inside of the pump line segments and the gas boundary layer device of Figure 1 showing all of the slots on the middle section and the slots on the downstream spacer ring generally aligned with each other;
- Figure 4 is a representation of a TEOS molecule that flows through the apparatus of Figure I, wherein R represents an ethyl alcohol radical C 2 H 5 ;
- Figure 5 is a representation of the formation of a polymerized TEOS molecule when the TEOS of Figure 4 reacts with water vapor
- Figure 6 is a representation of the formation of a polymerized TEOS molecule that is larger than the polymerized TEOS molecule of Figure 5 formed by the reaction of TEOS with water vapo ⁇
- Figure 7 is a representation of the formation of a polymerized TEOS molecule that is larger than the polymerized TEOS molecule of Figure 6 formed by the reaction of TEOS with water vapor:
- Figure 8 is a perspective view of the gas boundary layer apparatus of Figure 1 oriented so as to enable viewing into the upstream collar of the gas boundary layer apparatus of the present invention:
- Figure 9 is an exploded isometric view of the upstream collar, the downstream spacer ring, and one of the modular middle sections of the gas boundary layer apparatus of Figure 1 :
- Figure 10 is a cross-sectional view of the upstream collar of Figure 9;
- Figure 1 1 is a cross-sectional view of the middle section of Figure 9;
- Figure 12 is a cross-sectional view of the downstream spacer ring of Figure 9;
- Figure 13 is another perspective view of the gas boundary layer apparatus of the present invention similar to Figure 8, but oriented so as to enable viewing into the downstream section of the gas boundary layer apparatus of the present invention.
- Figure 14 is a graph showing the thickness of the solidified chains of polymerized TEOS molecules deposited on the surface of the exit pipe line segment of Figure 1 as a function of temperature of the surface.
- Gas boundary layer creating apparatus 10 for use in inhibiting the deposition and buildup of chains of polymerized TEOS molecules, particularly solid chains of polymerized TEOS molecules, in pump line segments located downstream from or after a reaction furnace or chamber 21 during a semiconductor manufacturing process is illustrated in Figures 1 and 2.
- the apparatus 10 includes an elongated annular nozzle assembly 20 positioned inside pipe line segments 52, 58 such that a hollow annulus. plenum, or volume is created between the inner surfaces 54. 56 of the respective pipe segments 52, 58 and the outer surfaces of the annular nozzle assembly 20. When the annular nozzle assembly 20 is positioned within the pipe line segments 52, 58, TEOS gas molecules.
- the annular nozzle assembly 20 minimizes the amount of deposition and build-up of chains of polyermized TEOS molecules, which are formed as a result of chemical reaction between TEOS gas molecules and water vapor molecules as the TEOS gas molecules and water vapor molecules flow through the annular nozzle assembly 20, on the inner surfaces 54, 56 of the respective pipe iine segments 52, 58 and on the inner surfaces 72, 85, 94, 96, 108 of the annular nozzle assembly 20.
- the pipe line segments 52, 58 are preferably located immediately downstream of the reaction furnace 21 and positioned such that gases discharged from the reaction chamber 21 flow through the hollow interior conduit or duct formed by the annular nozzle assembly 20 but not through the annular volume or plenum formed between the pipe line segments 52, 58 and the annular nozzle assembly 20.
- the annular nozzle assembly 20 causes a fluid or gas, such as, for example, nitrogen or other inert gas, injected or otherwise introduced into the pipe segments 52, 58 to flow in a laminar layer, boundary, or moving virtual wall of gas along the inner surface of the interior conduit formed by the annular nozzle assembly 20 in a direction generally downstream and away from the reaction furnace 21 , as illustrated by the flow arrows A in Figures 2 and 3.
- a fluid or gas such as, for example, nitrogen or other inert gas
- This moving layer, wall, or boundary of gas covering and flowing along the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 reduces, and can even prevent, adsorption or surface retention of TEOS gas molecules and water vapor molecules on the inner surfaces 72, 85, 94, 96, 108 of the annular nozzle assembly 20 and the inner surfaces 54, 56 of the respective pipe line segments 52, 58, which will reduce or prevent surface chemical reaction between the TEOS gas molecules and water vapor molecules adsorbed on the inner surfaces 72.
- the gas forming the boundary or virtual wall on the inner surface of the annular nozzle assembly 20 is preferably an inert gas, such as nitrogen, but can also be a reactive gas.
- FIG. 1-3 A representative elevation view of a portion of a semiconductor manufacturing process is shown in Figures 1-3.
- silicon dioxide Si0 2
- Si0 2 silicon dioxide
- the wafer(s) to be coated with silicon dioxide is positioned in a reaction chamber or furnace 21, and reaction or source material gases, such as tetraethylorthosilicate or tetraethoxysilane gas (Si(OC 2 H 5 ) 4 ), otherwise known as TEOS gas, are fed. pumped, or otherwise introduced into the reaction furnace 21 through the inlet 36 or the inlet 38.
- the TEOS gas Upon heating of the TEOS gas to approximately 750°C within the reaction chamber 21. the TEOS gas decomposes and forms silicon dioxide within the reaction furnace 21 according to the following chemical reaction which illustrates the pyrolysis or decomposition of the TEOS gas: Si(OC 2 H.) Si0 2 + 4C 2 H 2 + 2H 2 0 (1)
- TEOS gas molecules do not require additional oxygen molecules to yield a silicon dioxide molecule when sufficient heat is provided in the reaction furnace 21 to cause chemical decomposition of the TEOS gas molecule.
- both TEOS gas and oxygen can be injected into the reaction chamber 21 through the inlets 36, 38.
- the reaction chamber or furnace 21 is heated to approximately 700°C, the TEOS gas and oxygen react according to the following equation to form silicon dioxide in the reaction furnace 21:
- reaction processes in the reaction furnace 21 using TEOS gas are also possible to form the silicon dioxide from the TEOS gas injected into the reaction chamber 21.
- TEOS gas is very unstable in the presence of water vapor. That is, the molecules of the TEOS gas are easily hydrolyzed in the presence of water vapor which causes the TEOS gas molecules to undergo chemical alteration to form chains of polymerized TEOS molecules. More specifically, the molecular formula for TEOS gas is Si(OC 2 H 5 ) 4 and each TEOS gas molecule comprises essentially four organic groups (ethanol radicals) attached to a silicon (Si) atom through only oxygen (O) atoms.
- a TEOS gas molecule 40 can be expressed as illustrated in Figure 4 where R represents an ethyl alcohol (ethanol) radical given by the molecular formula C 2 H 5 .
- R represents an ethyl alcohol (ethanol) radical given by the molecular formula C 2 H 5 .
- the TEOS gas molecules 40 react with the water vapor molecule or molecules 42, the TEOS gas molecules 40 become hydrolyzed and polymerized to form a polymerized TEOS molecule 44, as illustrated in Figure 5.
- a polymer is a large molecule made from many units or other molecules linked together chemically so that the polymerized molecule comprises a giant molecule formed by the union of simple molecules. So long as enough water molecules (H 2 0) 42 exist, the polymerization process of the TEOS molecules 40 will continue and large chains 46.
- annular nozzle assembly 20 can be placed inside a single pipe line segment and the number of pipe line segments into which the annular nozzle assembly 20 is placed does not significantly change the operation or structure of the annular nozzle assembly 20 or the concepts underlying the annular nozzle assembly 20 of the present invention.
- An important concept underlying the present invention is the recognition that reaction of the TEOS gas molecules and the water vapor molecules in a pipe or pump line segment occurs primarily on surfaces, although some gas phase reaction between the TEOS gas molecules and the water vapor molecules does occur, and the apparatus 10 and method of this invention inhibits such surface reaction.
- the creation of the chains of polymerized TEOS molecules does not occur merely by a change in phase as a result in a change in temperature of the TEOS gas exiting the reaction furnace. Therefore, build-up of solid material on the inner surface of pump lines or pipes downstream of the reaction furnace is not a result of sublimation or condensation of the TEOS gas.
- chains of polymerized TEOS gas molecules are created by the chemical reaction of the TEOS gas molecules and the water vapor molecules, the majority of the chemical reaction between the TEOS gas molecules and the water vapor molecules will occur on a surface such as the inner surface of a pipe or pump line segment rather than in a flowing gas stream because of physical adsorption of the TEOS gas on surfaces of the pipe or pump line segments.
- Polymerization is usually a relatively slow chemical reaction process. The adso ⁇ tion of the TEOS gas molecules and the water vapor molecules on the surfaces of pipe or pump line segments holds the molecules in close proximity to each other for sufficient time to create the opportunity for such slow surface chemical reaction between the TEOS gas molecules and the water vapor molecules to proceed.
- the method of reducing build-up of polymerized chains 48 of TEOS molecules according to the present invention is to prevent the TEOS gas molecules 40 and the water vapor molecules 42 flowing through the hollow conduit formed by the annular nozzle assembly 20 from adsorbing or residing on, or even contacting, either the inner surfaces 54, 56 of the respective pipe segments 52, 58, which prevents the TEOS gas molecules 40 and the water vapor molecules 42 from chemically reacting and forming the polymerized chains of TEOS molecules that would otherwise result in the deposition and build-up of solid chains of polymerized TEOS molecules on the inner surfaces 54, 56 of the respective pipe segments 52, 58.
- Another important concept underlying the apparatus and method of the present invention is that since a polymerization process is a chemical process, the rate of chemical reaction of the TEOS gas molecules and the water vapor molecules will increase with an increase in temperature inside the pipe segments 52. 58 and the annular nozzle assembly 20. Therefore, the higher the temperature of the inner surfaces of a pipe or pump line, the faster the chemical reaction rate between TEOS gas molecules and the water vapor molecules flowing through the pipe or pump line and, as a result, the greater the deposition and build up of solidified chains of polymerized TEOS molecules on the inner surfaces of the pipe or pump line segments. In addition, the lower the temperature of the inner surfaces of a pipe or pump line, the higher the rate of adsorption on the inner surfaces of the pipe or pump line and.
- TEOS gas molecules and the water vapor molecules flowing through the pipe or pump line segment are maintained so as to minimize the rate of solid deposition on the inner wall of the pump line, as will be discussed in more detail below.
- the temperature of the pipe segments 52. 58 and their respective inner surfaces 54, 56 can be maintained at the desired level by installing a heater, heating jacket, or other warming device (not shown) around the pipe segments 52, 58.
- the pipe segments 52, 58 act as an outer shell for the annular nozzle assembly 20. Heat generated by the heating device surrounding the pipe segments 52, 58 will be conducted or radiated so as to heat the annular nozzle assembly 20.
- the temperature of the inner surfaces 54, 56, the pipe segments 52, 58 and the annular nozzle assembly 20 can also be maintained at the desired level by controlling the temperature of the gas or fluid injected in the pipe segments 52. 58 and the annular nozzle assembly 20, as will be discussed in more detail below.
- a significant feature of the annular nozzle assembly 20 of the present invention is that the annular nozzle assembly 20 inhibits TEOS gas flowing in the pipe line segments 52. 58 from contacting and being adsorbed on the inside surfaces 54, 56 of the respective pipe line segments 52, 58, thus reducing and possibly preventing the chemical reaction of the TEOS gas molecules 40 and the water vapor molecules 42 on the inner surfaces 54. 56 and thereby inhibiting the deposition and build-up of solidified chains of polymerized TEOS molecules within the pipe line segments 52, 58, as will be discussed in more detail below.
- the unreacted or undecomposed TEOS gas molecules 40 and the water vapor molecules 42 exiting the reaction furnace 21 through the furnace outlet 50 will continue to flow downstream through the pipe line segments 52, 58 and can be collected at a more suitable place, such as a trap 60, positioned further downstream from the reaction furnace 21 than the pipe segments 52. 58.
- the annular nozzle assembly 20 preferably has a generally hollow cylindrical or tubular shape and, as previously discussed above, preferably includes an upstream collar or section 22, a downstream spacer ring or section 24, and, in most cases, one or more modular middle sections 26 positioned between, and connected to, the upstream collar 22 and the downstream spacer ring 24.
- the upstream collar 22 is preferably positioned proximal to the reaction furnace 21 at the furnace outlet 50.
- the downstream ring 24 is preferably positioned distally from the reaction furnace 21.
- the upstream collar 22 includes the o-ring or seal 66 which is seated in the notch or groove 68 in the rim 69, as illustrated in Figures 3, and 8-10.
- the o-ring or seal 66 forms a tight seal, preferably a gas tight seal, against the inner surface 54 of the pump line segment 52 (see Figures 2 and 3) when the annular nozzle assembly 20 is placed into the pump line segments 52, 58, as will be discussed in more detail below.
- the o-ring 66 can comprise a rubber, plastic, or other suitable material.
- the rim 69 is on the upstream end of the upstream collar 22 and preferably includes a inclined or angled upstream surface 71 to reduce the impact between gases discharged from the reaction furnace 21 and the rim 69 and to reduce the build-up of material on the rim 69 of the upstream collar 22 as gas and other particulate matter flows from the reaction furnace 21 into the upstream collar 22 through the entrance port of the upstream collar 22 formed by the rim 69.
- the upstream collar 22 includes a generally smooth and cylindrical inner surface 72 and cylindrical outer or outside surface 74. A portion of the cylindrical outer surface 74 contains the external threads 76 for mating or otherwise attaching or coupling the upstream collar 22 to the middle section 26 or the downstream spacer ring 24, as will be discussed in more detail below.
- the unthreaded portion 77 of the surface 74 is generally smooth to enable the insertion of the downstream end 79 of the upstream collar 22 into the middle section 26 or the downstream spacer ring 24.
- the upstream collar 22 is preferably comprises a stainless steel material or other suitable metallic material.
- the diameter of the upstream collar 22 is generally related to the size of the pump line segment into which the apparatus is to be placed, as will be discussed in more detail below.
- the longitudinal or axial length of the upstream collar 22 is preferably minimized, as will also be discussed in more detail below.
- the middle section 26 has a generally hollow cylindrical shape with a preferably smooth outer surface 78, as illustrated in Figures 2, 3, 8, 9, and 11.
- the middle section 26 also includes the outer surface 80 which has a diameter preferably identical to the diameter of the outer surface 74 on the upstream collar 22.
- a portion of the outer surface 80 includes the external threads 82 for mating or otherwise attaching the middle section 26 to the downstream spacer ring 24, as will be discussed in more detail below.
- the unthreaded portion 83 of the outer surface 80 is generally smooth to enable insertion of the downstream end 87 of the middle section 26 into the downstream spacer ring 24.
- the middle section 26 preferably comprises a stainless steel material or other suitable metallic material.
- the middle section 26 has a varying inner diameter and a varying wall thickness.
- the middle section 26 includes the cylindrically shaped wall 91 having the inner surface 85, the frustum shaped wall 93 having the inner surface 94, and the cylindrically shaped wall 95 having the inner surface 96, the purpose and operation of which will be discussed in more detail below.
- the downstream spacer ring 24 is similar in many ways to the middle section 26. More specifically, the downstream spacer ring 24 includes slots or openings 98 separated by divider portions 100.
- the upstream end 102 of the middle section includes the internal threads 104 which are mateable or joinable with the external threads 82 on the middle section 26 or the external threads 76 on the upstream collar 22.
- the downstream spacer ring 26 has a generally cylindrical outer and smooth surface 106 and a generally cylindrical and smooth inner surface 108 (see Figures 3 and 12).
- the downstream end 1 10 of the downstream spacer ring 24 includes the radially extending rim 1 12 which has approximately the same outer diameter as the o-ring or seal 66 on the upstream collar 22.
- the downstream spacer ring 24 preferably comprises a stainless steel material or other suitable metallic material.
- the generally cylindrical and hollow tubular annular nozzle assembly 20 is created which creates a conduit through which TEOS gas molecules, water vapor molecules, and other effluent from the reaction chamber 21 can flow or be conducted.
- the tubular annular nozzle assembly 20 can have a circular, square, rectangular, oval, or other cross-sectional shape. If desired, the downstream spacer ring 26 can also be attached directly to the upstream collar 22.
- the middle sections 26 can be added or removed as needed to create a tube of the appropriate length.
- the slots 84 in the middle section 26 are positioned over the unthreaded and generally smooth cylindrical portion 77 of the outer surface 74 of the upstream collar 22.
- the slots 98 in the downstream spacer ring 24 are positioned over the unthreaded and generally smooth cylindrical portion 83 of the outer surface 80 of the middle section 26.
- the slots 84 on one of the middle sections 26 are positioned over the unthreaded portion 83 of the surface 80 of the other middle section 26.
- the annular nozzle assembly 20 is preferably positioned within the hollow cylindrical volume formed by the pump line segments 52, 58 which are joined together at the flanges 1 14, 1 16.
- a flange separator, o-ring, or other seal 1 18 may be positioned between the flanges 1 14, 1 16 to ensure a tight, preferably hermetic, seal between the flanges 1 14, 1 16 and, as a result, the pump line segments 52, 58.
- the flanges 1 14, 1 16 are joined by conventional means such as bolts (not shown) passing through both flanges 1 14, 1 16, and the seal 1 18. or clamps (not shown) surrounding both of the flanges 1 14, 1 16.
- the pipe segments 52, 58 may also be welded together or, as previously described above, may constitute a single section or segment of pipe or pump line so that joining of separate pipe segments 52, 58 is not necessary.
- the method and devices for creating a tight, preferably airtight, connection of sections of pump or pipe lines in a semiconductor manufacturing process is well known to persons having ordinary skill in this art and need not be discussed in any further detail for purposes of the present invention.
- the rim 69 of the upstream collar 22 is preferably positioned adjacent the stop 120 on the reaction furnace 21, as illustrated in Figures 2 and 3. If the reaction furnace 21 does not have the stop 120, the annular nozzle assembly 20 is preferably positioned so that the rim 69 is positioned at the furnace outlet 50 of the reaction furnace 50.
- the o-ring or seal 66 preferably forms a tight, preferably air-tight, seal against the inner surface 54 of the pipe line segment 52 so that gas will not flow into the reaction furnace 21 from the volume created by the inner surface 54 of the pipe line segment 52 and the outside surfaces 78.
- the rim 1 12 of the downstream spacer ring 24 is positioned within the pipe line segment 58.
- the rim 69 of the upstream collar 22 and the rim 1 12 of the downstream spacer ring 24 keep the annular nozzle assembly 20 generally aligned coaxially with the pipe line segments 52, 58, in fact, the rim 1 12 on the downstream spacer ring 24 is not required for the operation of the annular nozzle assembly 20 and the annular nozzle assembly 20 is not required to be positioned coaxially with the pipe line segments 52, 58.
- the rim 1 12 on the downstream spacer ring 24 improves the ease of installation of the annular nozzle assembly 20 but is not required by the annular nozzle assembly 20. All that is required is that some volume of space exist between the inner surfaces 54. 56 of the respective pipe segments 52. 58.
- Either the pipe line segment 52 or the pipe line segment 58 should contain an gas inlet or port 122 that allows gases or fluids to be injected into the volume, reservoir, or plenum formed between the inner surfaces 54, 56 of the respective pipe segments 52, 58 and the outer surface of the annular nozzle assembly 20.
- the port 124 on the inlet 122 is connected via a hose or tube 125 to a source 126 of the gas or fluid to be injected into the pipe line segments 52, 58.
- a controller 128 such as a mass flow controller or volume flow rate controller, may also be positioned between the source 126 and the port 124 on the inlet 126 to feed, pump, or otherwise introduce the gas or fluid from the source 126 to the port 122 and to control, monitor, or regulate the amount of gas or fluid injected into the interior of the pipe line segments 52. 58.
- the hose 125 connected to the pipe segment 58 at the port 124 may be securely fastened to the port 124 with a clamp 127 which may include internal threads (not shown) to mate with external threads (not shown) on the stem 129 of the port 124.
- the hose 125 can be permanently attached to the clamp 129 before the clamp 129 is placed over the stem 129.
- a second clamp capable of being tightened and untighted can be positioned around the clamp 129 and the stem 129 to ensure that the hose 125 and the clamp 129 maintain their desired position.
- connection of a hose to a port on a pipe segment is well known to people having ordinary skill in the art and need not be discussed further for purposes of the present invention since there are many ways in which a fluid or gas from the source 126 can flow through a hose into the port 124 and, as a result, the plenum formed between the pipe segments 52, 58 and the annular nozzle assembly 20.
- the outer diameter of the annular nozzle assembly 20 formed by the surfaces 78, 106 of the middle section 26 and downstream spacer ring 24, respectively, is preferably in a range between 2.50 and 2.75 inch for a three inch inner diameter pipe segment 52 and is preferably in a range between 2.25 inch and 2.50 inch for a four inch inner diameter pipe segment 52 to enable a sufficient volume or plenum to be formed between the inner surfaces 54, 56 of the pipe segments 52, 58, respectively, and the outer surface of the annular nozzle assembly 20 formed by the outer surfaces 78, 106 of the middle section 26 and downstream spacer ring 24, respectively, so as to enable the gas injected into the pipe segment 58 through the inlet 122 to flow through the slots 84, 98.
- annular nozzle assembly 20 allows the downstream spacer ring 24 to be attached directly to the upstream collar 22 and allows, if desired. multiple middle sections 26 to be connected between the upstream collar 22 and the downstream spacer ring 24. Therefore, the length of the annular nozzle assembly 20 is variable and depends, in large part, on the length of the pipe segments 52, 58. If a trap 60 is located after the downstream end of the pipe line segment 58 to collect the polymerized chains of TEOS molecules, the annular nozzle assembly 20 need only extend from the reaction furnace 21 to the entrance to the trap 60.
- TEOS gas molecules 40 are pumped out of the reaction chamber 21 through the furnace outlet 50 and into the pipe line segment 52.
- the annular nozzle assembly 20 is used to reduce and even prevent the adsorption of the TEOS gas molecules 40 and the water vapor molecules 42 on the inner surfaces 54, 56, of the pipe segments 52, 58, respectively, which will reduce and possibly prevent the surface chemical reaction between the TEOS gas molecules 40 and the water vapor 42 on the inside surfaces 54, 56 of the pipe line segments 52, 58, respectively, and. as a result, reduce and possibly prevent the deposition, build up.
- nitrogen gas or other inert gas is fed or pumped from the source 126 and injected or otherwise introduced into the interior of the pipe line segment 58 via the hose or tube 125 and the gas inlet 122.
- the gas flows so as to substantially or completely fill the volume formed between the inner surfaces 54, 56 of the pipe line segments 52, 58, respectively, and the outer surface of the annular nozzle assembly 20, as indicated by the arrows A in Figures 2 and 3.
- the o-ring or seal 66 on the upstream collar 22 prevents the gas from flowing upstream into the reaction furnace 21 and the o-ring or seal 66 and the rim 1 12 of the downstream spacer ring prevent substantially all of the gas from flowing anywhere except through the slots 84 on the middle sections 26 and the slots
- each of the slots 84 on the middle sections 26 and each of the slots 98 on the downstream spacer ring 24 is positioned adjacent either the smooth portion 77 of the surface 74 of the upstream collar 22 or the smooth section 83 of the surface 80 of another middle section 26, gaps are formed between the inner surface 85 of the middle section 24 and the smooth surface portion 77 of the upstream collar 22, between the inner surface 85 of one middle section 26 and the smooth surface portion 83 of another middle section 26.
- the gaps are preferably and approximately about one-eighth inch in height.
- the gas injected or otherwise flowing into the pipe segment 58 through the inlet 122 will disperse so as to flow through substantially all, and perhaps all. of the slots or openings
- the flow of the gas is redirected or deflected by the smooth portions 77, 83 of the surfaces 74, 80, respectively, such that the gas covers or coats, and flows along, the inner surfaces 85, 94, 96 of the middle sections 26 and the inner surface 108 of the downstream spacer ring 24.
- the gas forms a boundary layer or moving wall covering preferably all. but at least a substantial portion of, the inner surfaces 72, 85, 94, 96, 108 of the annular nozzle assembly 20 and flowing in a generally axial and downstream (from the reaction furnace 21) direction on or along the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20.
- the flow of the gas covering the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 is preferably a laminar flow.
- a gas boundary layer or virtual wall is formed between the TEOS molecules 40 and water vapor molecules 42 flowing though the interior volume of the annular nozzle assembly 20 and the inner surfaces 85, 94. 96. 108 of the annular nozzle assembly 20.
- the annular nozzle assembly 20 prevents, or at least inhibits, the TEOS gas molecules 40 and the water vapor molecules 42 from adsorbing on, residing on. attaching to. or otherwise touching or contacting the inner surfaces 85. 94. 96. 108 of the annular nozzle assembly 20. thereby inhibiting or preventing the surface chemical reaction between the TEOS gas molecules 40 and the water vapor 42 on the inner surfaces 85, 94, 96. 108 of the annular nozzle assembly 20 and, as a result, inhibiting or preventing the deposition, build-up, and growth of solid chains of polymerized TEOS molecules on the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20. In addition, solid chains of polymerized TEOS molecules are prevented from depositing and building up on the inner surfaces 54, 56 of the respective pipe line segments 52, 58.
- annular nozzle assembly 20 As a more detailed explanation of the operation of the annular nozzle assembly 20 described above, during the semiconductor manufacturing process, TEOS gas molecules 40 and water vapor molecules 42 are discharged from the reaction furnace 21 through the furnace outlet 50 into the pipe segment 52.
- the annular nozzle assembly 20 is preferably positioned within the pipe segments 52. 58 such that the rim 69 of the upstream collar 22 is positioned against the stop or brace 120 of the reaction furnace 21 or, if the stop 120 does not exist, such that the rim 69 of the upstream collar 22 is positioned at the exit port 50 of the reaction furnace 21.
- the annular nozzle assembly 20 is preferably positioned within the pipe segments 52. 58 such that all of the gases or effluent discharged from the reaction furnace 21 through the exit port 50 flow through the hollow interior volume of the annular nozzle assembly 20.
- the amount of TEOS gas molecules 40 and the water vapor molecules 42 contacting, residing on, or being adsorbed on the inner surfaces 72, 85, 94, 96, 108 of the annular nozzle assembly 20, must be reduced.
- the gas molecules injected or otherwise fed or introduced into the pipe segments 52, 58 through the gas inlet 122 disperse and flow through the slots 84, 98 so as to form a thin layer or wall of gas molecules covering and flowing along the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 and, more importantly, so as to flow between the TEOS gas molecules 40 and the water vapor molecules 42 from the reaction furnace 21 and the inner surfaces 85. 94, 96, 108 of the annular nozzle assembly 20.
- the gas molecules flowing through the slots 84, 98 form a boundary or wall between the TEOS gas molecules 40 and water vapor molecules 42 flowing into the annular nozzle assembly 20 from the reaction chamber 21 and the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20.
- the generally cylindrically or tubular shaped wall or boundary layer of gas flows downstream away from the reaction furnace 21 along the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 such that the gas must be continuously pumped or fed from the source 126 into the pipe segment 58 through the gas inlet 122 during the manufacturing process.
- the gas molecules forming the thin virtual wall or boundary layer on the surfaces 85, 94. 96, 108 of the annular nozzle assembly 20 will not react with the TEOS gas molecules 40 or the water vapor molecules 42 flowing through the hollow interior volume of the annular nozzle assembly 20. Rather, when a TEOS gas molecule 40 or water vapor molecule 42 collides with or otherwise strikes a gas molecule from the boundary layer, the gas molecule will be directed or deflected toward the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 while the TEOS gas molecule 40 or water vapor molecule 42 will be directed or deflected away the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20.
- the gas pressure within the annular nozzle assembly 20 is preferably kept high enough to ensure that there are enough collisions between the gas molecules forming the boundary layer and the TEOS gas molecules 40 and the water vapor molecules 42 to continuously direct the gas molecules forming the boundary layer toward the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 and to continuously direct the TEOS gas molecules 40 and the water vapor molecules 42 away from the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20.
- a person in an empty subway car can more easily move from one side of the subway car to the other side of the subway car without bumping into or contacting any one else than a person in a crowded subway car.
- a laminar flow of the gas molecules along the inner surfaces 85, 94, 96, 108 of the annular nozzle assembly 20 is preferred so as to minimize the radially inward movement of the barrier gas molecules in the pipe line segments 52, 58 which will reduce the efficiency, integrity, and coherency of the cylindrically shaped moving wall or boundary layer of gas molecules. Turbulent flow of the barrier gas molecules along the inner surfaces 85. 94, 96, 108 of the annular nozzle assembly 20 will cause the gas molecules to tend to migrate or flow away from the inner surfaces 85, 94, 96. 108 of the annular nozzle assembly 20.
- abrupt changes in flow direction created by pipe segments downstream of the pipe segments 52, 58 are preferably avoided since they will tend to cause the flowing layer of barrier gas molecules to separate or distance themselves from the inner surfaces of the pipe segments.
- the inner surfaces 72. 85. 94. 96, 108 of the annular nozzle assembly 20 are preferably smooth so as to reduce turbulence in the gas boundary layer or moving virtual wall.
- the pressure in the reaction furnace 21 can also impact the performance of the annular nozzle assembly 20. More specifically, if the pressure in the reaction furnace 21 is too low. molecular flow will be created in the pipe line segments 52, 58.
- the mean free path for gas molecules is the average distance a molecule will travel before colliding with another molecule.
- the mean free path for a molecule can be calculated from the following equation:
- the TEOS gas molecules 40 and the water vapor molecules 42 will more easily be able to flow across the inner volume of the annular nozzle assembly 20 and contact and reside on the inner surfaces 72. 85, 94, 96, 108 of the annular nozzle assembly 20. Therefore, the pressure within the annular nozzle assembly 20 created by the TEOS gas molecules 40 and the water vapor molecules 42 is preferably maintained above ten millitorr so as to keep the density of the molecules in the annular nozzle assembly 20 and the number of collisions between the molecules in the annular nozzle assembly 20 sufficiently high to maintain the integrity of the thin moving wall or flowing boundary layer of gas molecules between the inner surfaces 72, 85.
- the flow rate of the gas into the inlet 122 on the pipe segment 58 should be high enough to create a boundary layer or virtual wall of gas molecules along the inner surfaces 72. 85, 94, 96, 108 of the annular nozzle assembly 20 and can be increased or decreased as necessary or desired depending on the diameters of the pipe segments 52. 58 and the annular nozzle assembly 20, and the length of the annular nozzle assembly 20.
- the flow rate of the gas into the pipe segment 58 through the gas inlet 122 should be approximately one hundred to two hundred standard cubic centimeters per minute (seem) to create a suitable boundary layer of gas molecules.
- the mass flow rate of the gas being injected or flowing into the pipe segment 58 through the gas inlet 122 can be controlled by a mass flow controller 128 which can be, for example, a MKS Model 1259C-00500RV Mass Flow Controller marketed by MKS Instruments, Inc.. of Andover, Massachusetts.
- the chemical structure of the chains of polymerized TEOS molecules is also a function of temperature within the pipe segments 52, 58 and the temperature of the chains of polymerized TEOS molecules. More specifically, denser and harder polymerized TEOS material will be formed at high temperatures which, when deposited on the inner surfaces of the pipes or pump lines, will require significant force to remove, thereby making the cleaning of the pipes or pump lines by removal of the solid chains of polymerized TEOS molecules difficult, expensive, and time consuming. At low temperatures, the chains of polymerized TEOS molecules form a crystal-like transparent material that has a lower density in comparison to the solid material created at high temperatures and is significantly easier to break, thereby presumably making the pipe or pump line segments easier to clean.
- an optimal temperature T at which the inner surfaces of pipe or pump line segments are preferably maintained so as to minimize the amount of deposition of solidified chains of polymerized TEOS molecules.
- deposition of solidified chains of polymerized TEOS molecules is undesirably increased as a result of increased adso ⁇ tion of the water vapor molecules and the TEOS gas molecules on the inner surfaces of the pipe or pump line segments which increases the amount of TEOS gas molecules and water vapor molecules available for surface chemical reaction.
- the temperature T is preferably in a range between ninety-five degrees Celsius (95 °C) and one-hundred and twenty-five degrees celsius (125°C) and is optimally one-hundred and ten degrees celsius (1 10°C) for a pipe of pump line segment, such as the pipe or pump line segments 52, 58, having an inner diameter of three inches.
- the inner surfaces of pipe segments can be heated by placing a heater or heating jacket (not shown) around the outside of the pipe segment.
- annular nozzle assembly 20 will prevent most, if not all, of the deposition and build-up of chains of polymerized TEOS molecules on the inner surfaces of the annular nozzle assembly 20.
- a heater or heating jacket is preferably wrapped around the pipe segments 52, 58 to heat the inner surfaces 54, 56 of the respective pipe segments 52, 58. Heat from the heater or heating packet will be transmitted by either conduction or radiation to heat the annular nozzle assembly 20 and, preferably, the inner surfaces of the annular nozzle assembly 20.
- the inner surfaces of the annular nozzle assembly 20 are preferably heated to a temperature in a range between 90°C to 120°C.
- the gas (or fluid) injected through the inlet 122 into the pipe segment 58 and flowing through the slots 84, 98 of the annular nozzle assembly 20 is preferably heated prior to injection to a temperature between 90°C and 140°C to aid in minimizing deposition and build-up of solid material in the manner previously discussed above.
- the heated gas (or fluid) works in a manner similar to the heating of the pipe segments 52, 58 discussed above in order to reduce the amount of deposition and build up of solid chains of polymerized TEOS on the inner surfaces 72, 85, 94. 96. 108 of the annular nozzle assembly 20.
- the heated gas also desorbs some of the water vapor molecules 42 adsorbed onto the inner surfaces 72, 85, 94, 96.
- the longitudinal or axial length of the inner surface 72 of the upstream collar 22 is preferably minimized so as to reduce or prevent surface chemical reaction of the TEOS gas molecules 40 and the water vapor molecules 42 on the inner surface 72 of the upstream collar 22.
- the longitudinal or axial lengths of the middle section 26 and the downstream spacer ring 24 are chosen more for ease of manufacturing and installation and are preferably between one inch and three inches long, although other lengths are certainly possible.
- the annular nozzle assembly 20 can be removed from the pipe segments 52, 58 and replaced or cleaned if necessary. A significantly less of amount of solid chains of polymerized TEOS molecules will be deposited on the inner surfaces 72, 85, 94, 96, 108 than would be deposited on the inner surfaces 54, 56 of the pipe segments 52, 58, respectively, using conventional techniques.
- the location of the vast majority, if not all, of the deposition of the solid chains of polymerized TEOS molecules will be located further downstream from the reaction furnace 21 than is currently possible using conventional techniques, thereby preventing paniculate material comprising solid chains of polymerized TEOS molecules from flowing back through the furnace outlet 50 into the reaction furnace 21 and contaminating the wafers being processed in the reaction furnace 21.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69841842T DE69841842D1 (en) | 1997-01-13 | 1998-01-08 | METHOD AND DEVICE FOR REDUCING THE DEPOSITION OF MATERIAL IN THE EXHAUST TUBE OF A REACTION SOIL |
AT98905943T ATE478168T1 (en) | 1997-01-13 | 1998-01-08 | METHOD AND DEVICE FOR REDUCING DEPOSIT OF MATERIAL IN THE OUTLET TUBE OF A REACTION FURNACE |
JP53104298A JP3472582B2 (en) | 1997-01-13 | 1998-01-08 | Method and apparatus for reducing material deposition in a discharge pipe of a reactor |
EP98905943A EP0954621B1 (en) | 1997-01-13 | 1998-01-08 | Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/782,785 | 1997-01-13 | ||
US08/782,785 US5827370A (en) | 1997-01-13 | 1997-01-13 | Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1998030731A1 true WO1998030731A1 (en) | 1998-07-16 |
Family
ID=25127174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/000162 WO1998030731A1 (en) | 1997-01-13 | 1998-01-08 | Method and apparatus for reducing deposition of material in the exhaust pipe of a reaction furnace |
Country Status (8)
Country | Link |
---|---|
US (1) | US5827370A (en) |
EP (1) | EP0954621B1 (en) |
JP (1) | JP3472582B2 (en) |
KR (1) | KR20000070123A (en) |
AT (1) | ATE478168T1 (en) |
DE (1) | DE69841842D1 (en) |
TW (1) | TW357256B (en) |
WO (1) | WO1998030731A1 (en) |
Cited By (4)
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JP2003068657A (en) * | 2001-08-28 | 2003-03-07 | Tokyo Electron Ltd | Device and method for heat treatment |
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Families Citing this family (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6193802B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment |
US6187072B1 (en) | 1995-09-25 | 2001-02-13 | Applied Materials, Inc. | Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions |
US6194628B1 (en) | 1995-09-25 | 2001-02-27 | Applied Materials, Inc. | Method and apparatus for cleaning a vacuum line in a CVD system |
US6045618A (en) * | 1995-09-25 | 2000-04-04 | Applied Materials, Inc. | Microwave apparatus for in-situ vacuum line cleaning for substrate processing equipment |
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US6579805B1 (en) * | 1999-01-05 | 2003-06-17 | Ronal Systems Corp. | In situ chemical generator and method |
US6238514B1 (en) | 1999-02-18 | 2001-05-29 | Mks Instruments, Inc. | Apparatus and method for removing condensable aluminum vapor from aluminum etch effluent |
US6197119B1 (en) | 1999-02-18 | 2001-03-06 | Mks Instruments, Inc. | Method and apparatus for controlling polymerized teos build-up in vacuum pump lines |
US6255222B1 (en) | 1999-08-24 | 2001-07-03 | Applied Materials, Inc. | Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process |
US6227768B1 (en) * | 1999-09-30 | 2001-05-08 | Xerox Corporation | Particulate conveyor device and apparatus |
KR20020031823A (en) * | 2000-10-24 | 2002-05-03 | 김동수 | Exhaust gas delivering pipe with cleaning device |
KR100683114B1 (en) * | 2000-11-14 | 2007-02-15 | 삼성전자주식회사 | Exhaust line in apparatus for semiconductor processing |
US7378127B2 (en) | 2001-03-13 | 2008-05-27 | Micron Technology, Inc. | Chemical vapor deposition methods |
US6589835B2 (en) * | 2001-03-22 | 2003-07-08 | Macronix International Co., Ltd. | Method of manufacturing flash memory |
US6488745B2 (en) | 2001-03-23 | 2002-12-03 | Mks Instruments, Inc. | Trap apparatus and method for condensable by-products of deposition reactions |
US6733827B2 (en) * | 2001-04-11 | 2004-05-11 | The Procter & Gamble Co. | Processes for manufacturing particles coated with activated lignosulfonate |
JP3990881B2 (en) * | 2001-07-23 | 2007-10-17 | 株式会社日立製作所 | Semiconductor manufacturing apparatus and cleaning method thereof |
US6775992B2 (en) * | 2001-10-26 | 2004-08-17 | Cooper Research, Llc | Dry air injection system |
US7229666B2 (en) * | 2002-01-22 | 2007-06-12 | Micron Technology, Inc. | Chemical vapor deposition method |
US6800172B2 (en) * | 2002-02-22 | 2004-10-05 | Micron Technology, Inc. | Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor |
US6787185B2 (en) * | 2002-02-25 | 2004-09-07 | Micron Technology, Inc. | Deposition methods for improved delivery of metastable species |
JP4213491B2 (en) * | 2002-03-19 | 2009-01-21 | 富士通マイクロエレクトロニクス株式会社 | Manufacturing method of optical switching element |
US6814813B2 (en) | 2002-04-24 | 2004-11-09 | Micron Technology, Inc. | Chemical vapor deposition apparatus |
US6858264B2 (en) * | 2002-04-24 | 2005-02-22 | Micron Technology, Inc. | Chemical vapor deposition methods |
US7468104B2 (en) | 2002-05-17 | 2008-12-23 | Micron Technology, Inc. | Chemical vapor deposition apparatus and deposition method |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6887521B2 (en) * | 2002-08-15 | 2005-05-03 | Micron Technology, Inc. | Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices |
KR100505670B1 (en) * | 2003-02-05 | 2005-08-03 | 삼성전자주식회사 | Apparatus for manufacturing semiconductor device having hot fluid supplier for removing byproducts |
US6926775B2 (en) | 2003-02-11 | 2005-08-09 | Micron Technology, Inc. | Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces |
US7335396B2 (en) | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
US7375035B2 (en) | 2003-04-29 | 2008-05-20 | Ronal Systems Corporation | Host and ancillary tool interface methodology for distributed processing |
US7429714B2 (en) * | 2003-06-20 | 2008-09-30 | Ronal Systems Corporation | Modular ICP torch assembly |
US7235138B2 (en) | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US7344755B2 (en) | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7422635B2 (en) | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7056806B2 (en) | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US7282239B2 (en) | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US7323231B2 (en) | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7647886B2 (en) | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7258892B2 (en) | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
EP1702351A2 (en) * | 2003-12-23 | 2006-09-20 | John C. Schumacher | Exhaust conditioning system for semiconductor reactor |
US7906393B2 (en) * | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7584942B2 (en) * | 2004-03-31 | 2009-09-08 | Micron Technology, Inc. | Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers |
US20050241579A1 (en) * | 2004-04-30 | 2005-11-03 | Russell Kidd | Face shield to improve uniformity of blanket CVD processes |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
AU2005315606B2 (en) * | 2004-12-17 | 2009-04-30 | Air Products And Chemicals, Inc. | Pipe part for conveying a solid particulate material |
US20070003694A1 (en) * | 2005-05-23 | 2007-01-04 | Shivkumar Chiruvolu | In-flight modification of inorganic particles within a reaction product flow |
EP1731823A1 (en) * | 2005-06-08 | 2006-12-13 | Single Buoy Moorings Inc. | Cryogenic transfer hose |
TWI277662B (en) * | 2005-11-21 | 2007-04-01 | Chunghwa Picture Tubes Ltd | Chemical vapor deposition equipment |
US20070267143A1 (en) * | 2006-05-16 | 2007-11-22 | Applied Materials, Inc. | In situ cleaning of CVD system exhaust |
US20080047578A1 (en) * | 2006-08-24 | 2008-02-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for preventing clogging of reaction chamber exhaust lines |
US20080124670A1 (en) * | 2006-11-29 | 2008-05-29 | Frank Jansen | Inductively heated trap |
US20090020411A1 (en) * | 2007-07-20 | 2009-01-22 | Holunga Dean M | Laser pyrolysis with in-flight particle manipulation for powder engineering |
JP5133013B2 (en) * | 2007-09-10 | 2013-01-30 | 東京エレクトロン株式会社 | Exhaust system structure of film forming apparatus, film forming apparatus, and exhaust gas treatment method |
KR101071937B1 (en) * | 2009-08-10 | 2011-10-11 | 이승룡 | Nitrogen gas injection apparatus |
DE102009057380A1 (en) * | 2009-12-09 | 2011-06-16 | Uhde Gmbh | Device for feeding a fluid into a solids conveying line |
CN101936433A (en) * | 2010-07-23 | 2011-01-05 | 中电电气(南京)光伏有限公司 | Exhaust pipe joint of diffusion furnace for producing crystalline silicon solar cell |
CN101956182B (en) * | 2010-09-29 | 2013-05-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Gas wall structure for chemical vapor deposition equipment |
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US9133960B2 (en) | 2013-01-29 | 2015-09-15 | Mks Instruments, Inc. | Fluid control valves |
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WO2016182648A1 (en) * | 2015-05-08 | 2016-11-17 | Applied Materials, Inc. | Method for controlling a processing system |
JP6391171B2 (en) * | 2015-09-07 | 2018-09-19 | 東芝メモリ株式会社 | Semiconductor manufacturing system and operation method thereof |
US10337105B2 (en) | 2016-01-13 | 2019-07-02 | Mks Instruments, Inc. | Method and apparatus for valve deposition cleaning and prevention by plasma discharge |
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US11745229B2 (en) | 2020-08-11 | 2023-09-05 | Mks Instruments, Inc. | Endpoint detection of deposition cleaning in a pumping line and a processing chamber |
US20220170151A1 (en) * | 2020-12-01 | 2022-06-02 | Applied Materials, Inc. | Actively cooled foreline trap to reduce throttle valve drift |
US11664197B2 (en) | 2021-08-02 | 2023-05-30 | Mks Instruments, Inc. | Method and apparatus for plasma generation |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01286306A (en) * | 1988-05-12 | 1989-11-17 | Mitsubishi Electric Corp | Crystal growth device |
US4911102A (en) * | 1987-01-31 | 1990-03-27 | Toyoda Gosei Co., Ltd. | Process of vapor growth of gallium nitride and its apparatus |
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US5722802A (en) * | 1995-06-09 | 1998-03-03 | Low Emission Paint Consortium | Powder delivery apparatus |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1216842B (en) * | 1960-09-30 | 1966-05-18 | Karl Ernst Hoffmann | Process for the production of the purest silicon and germanium |
JPH08246155A (en) * | 1995-03-13 | 1996-09-24 | Sony Corp | Surface treating device for material to be worked |
-
1997
- 1997-01-13 US US08/782,785 patent/US5827370A/en not_active Expired - Lifetime
- 1997-03-03 TW TW086102491A patent/TW357256B/en not_active IP Right Cessation
-
1998
- 1998-01-08 JP JP53104298A patent/JP3472582B2/en not_active Expired - Lifetime
- 1998-01-08 AT AT98905943T patent/ATE478168T1/en not_active IP Right Cessation
- 1998-01-08 EP EP98905943A patent/EP0954621B1/en not_active Expired - Lifetime
- 1998-01-08 KR KR1019997006346A patent/KR20000070123A/en not_active Application Discontinuation
- 1998-01-08 WO PCT/US1998/000162 patent/WO1998030731A1/en not_active Application Discontinuation
- 1998-01-08 DE DE69841842T patent/DE69841842D1/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5160543A (en) * | 1985-12-20 | 1992-11-03 | Canon Kabushiki Kaisha | Device for forming a deposited film |
US4911102A (en) * | 1987-01-31 | 1990-03-27 | Toyoda Gosei Co., Ltd. | Process of vapor growth of gallium nitride and its apparatus |
JPH01286306A (en) * | 1988-05-12 | 1989-11-17 | Mitsubishi Electric Corp | Crystal growth device |
US5722802A (en) * | 1995-06-09 | 1998-03-03 | Low Emission Paint Consortium | Powder delivery apparatus |
Non-Patent Citations (3)
Title |
---|
BRODSKY M. H., HALLER I.: "METHOD OF PREPARING HYDROGENATED AMORPHOUS SILICON.", IBM TECHNICAL DISCLOSURE BULLETIN, INTERNATIONAL BUSINESS MACHINES CORP. (THORNWOOD), US, vol. 22., no. 08A., 1 January 1980 (1980-01-01), US, pages 3391/3392., XP002910726, ISSN: 0018-8689 * |
DUSINBERRE G M: "GAS TURBINE POWER", GAS TURBINE POWER, X, XX, 1 January 1952 (1952-01-01), XX, pages 158, XP002910728 * |
GIAMPAOLO T: "TURBINE TECHNOLOGY DEVELOPMENTS", GAS TURBINE HANDBOOK: PRINCIPLES AND PRACTICES, XX, XX, 1 January 1997 (1997-01-01), XX, pages 35 - 39, XP002910727 * |
Cited By (7)
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EP1125003A1 (en) * | 1998-10-19 | 2001-08-22 | Howmet Research Corporation | Excess cvd reactant control |
EP1125003A4 (en) * | 1998-10-19 | 2002-11-04 | Howmet Res Corp | Excess cvd reactant control |
JP2003068657A (en) * | 2001-08-28 | 2003-03-07 | Tokyo Electron Ltd | Device and method for heat treatment |
EP1529855A2 (en) * | 2003-10-29 | 2005-05-11 | Samsung Electronics Co., Ltd. | Diffusion system |
EP1529855A3 (en) * | 2003-10-29 | 2005-06-22 | Samsung Electronics Co., Ltd. | Diffusion system |
US7452423B2 (en) | 2003-10-29 | 2008-11-18 | Samsung Electronics Co., Ltd. | Diffusion system |
US8915775B2 (en) | 2006-04-24 | 2014-12-23 | Mitsubishi Cable Industries, Ltd. | Exhaust system |
Also Published As
Publication number | Publication date |
---|---|
EP0954621A4 (en) | 2004-05-06 |
EP0954621B1 (en) | 2010-08-18 |
TW357256B (en) | 1999-05-01 |
JP3472582B2 (en) | 2003-12-02 |
JP2002501671A (en) | 2002-01-15 |
KR20000070123A (en) | 2000-11-25 |
EP0954621A1 (en) | 1999-11-10 |
ATE478168T1 (en) | 2010-09-15 |
DE69841842D1 (en) | 2010-09-30 |
US5827370A (en) | 1998-10-27 |
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