WO1998036410A1

WO1998036410A1 - Thin film magnetic head, recording/reproduction separation type head, magnetic disk apparatus and process for producing thin film magnetic head

Info

Publication number: WO1998036410A1
Application number: PCT/JP1997/000412
Authority: WO
Inventors: Tomohiro Okada; Yohji Maruyama; Hisano Yamamoto; Isao Nunokawa; Moriaki Fuyama; Matahiro Komuro
Original assignee: Hitachi, Ltd.
Priority date: 1997-02-17
Filing date: 1997-02-17
Publication date: 1998-08-20

Abstract

A thin film magnetic head having a track portion having a precise shape free of read and write blur, a recording/reproduction separation type head using the thin film magnetic head and a production method of the thin film magnetic head. A frame used for forming an upper magnetic core of a thin film magnetic head divided into a distal end portion for defining a track portion and portions other than this distal end portion, and a multilayered resist and reactive ion etching are employed for forming the frame at the distal end portion. The thickness of the distal end portion of the upper magnetic core is greater than the track width, and this track width is not greater than 1.5 νm. A recording/reproduction separation type head is produced by combining integrally this thin film magnetic head for recording and a magnetoresistance effect type head for reproduction. The thickness of the resist film for exposing the frame for defining the track portion can be reduced. Therefore, the frame can be formed into a pattern highly precisely. Since the vertically of the frame shape is high, a thin film magnetic head having a precise and vertical track portion and free of read and write blur can be obtained, and a magnetic disk apparatus having a high recording density and a large capacity can be accomplished.

Description

Specification

TECHNICAL FIELD The present invention relates to a thin-film magnetic head, a read / write separation type head, a magnetic disk device, and a method of manufacturing a thin-film magnetic head.

The present invention relates to a thin film magnetic head recording / reproducing separable type head and magnetic disk device used for novel recording / reproducing, and a method of manufacturing a thin film magnetic head. Background art

In a magnetic disk device, data on a recording medium is read and written by a magnetic head. In order to increase the recording capacity per unit area of a magnetic disk, it is necessary to increase the areal recording density. The method of improving the areal recording density is to increase the track density and the linear recording density. Of these, it is necessary to make the track width of the magnetic head smaller and more precise in order to increase the track density. Further, in terms of shape, the track pitch can be reduced by preventing writing and reading bleeding, so it is important to form the shape of the track vertically. is there. As a method of forming a magnetic core including a track portion of a thin-film magnetic head, it is widely known that a method using dry etching such as ion milling and a method using frame plating are used. In a method using dry etching such as a ring, a magnetic film such as permalloy is formed by sputtering on a substrate on which a lower magnetic core, a magnetic gap film, a conductor coil and an insulating film of the conductor coil are formed. Thereafter, a resist pattern is formed on the magnetic film by photolithography. Next Then, the magnetic film is subjected to dry etching such as ion milling using the resist pattern as a mask. Thereby, an upper magnetic core is formed. Japanese Patent Application Laid-Open No. Hei 7-225179 discloses such a dry etching method in which a magnetic pole end region defining a track width is formed by ion milling before a rear region. Examples of how to do this are disclosed.

On the other hand, in the frame plating method, a resist is formed by photolithography on a substrate on which a lower magnetic core, a magnetic gap film, a conductor coil, and a conductor coil insulating film are formed. After forming a frame, a magnetic film such as permalloy is mounted on the substrate on which the frame is formed. Next, an area surrounded by the frame is masked with a resist by photolithography, and an unnecessary magnetic film is removed by jet etching to form an upper magnetic core. As described above, in order to achieve a higher recording density of a magnetic disk device, it is necessary to achieve a narrower track and higher accuracy of the magnetic head. On the other hand, in order to avoid magnetic saturation at the track portion, which is the tip of the magnetic core, it is necessary to increase the thickness of the magnetic core, and the film thickness (t) is determined by the track width. When (w 1) is 1.5 μm, it must be at least twice as large as w 1 (t / w 1 = 2). However, in a method using such a thick film by dry etching such as ion milling, the resist pattern is masked due to the dimensional variation of the resist pattern formed by photolithography. Therefore, the upper magnetic core cannot be formed with high precision because the dimensional variations in the dry etching of the magnetic film are superimposed. In this regard, in the frame plating method, the dimensional accuracy of the resist frame is not uniform, and the dimensional accuracy of the upper magnetic core is not uniform. Therefore, in terms of the dimensional accuracy, a method using dry etching such as ion milling is used. It is more advantageous than. In addition, regarding the shape, the method using dry etching such as ion milling is not suitable for tracking. The shape of the part does not become vertical, but becomes a trapezoidal forward taper shape. Regarding this point, the frame plating method can also make the track part vertical by controlling the shape of the frame vertically.

However, when the resist used for frame formation is applied by spin coating, the rear region of the substrate (the region where the conductor coil and the insulating film of the conductor coil are formed, the portion located above the step on the substrate) The thickness of the resist film at the time becomes thin. For this reason, in the conventional frame plating method, the resist is applied so as to secure the frame height in the rear area of the substrate. At this time, there is a problem that the thickness of the resist film in the tip region of the substrate (the region where the magnetic gap for writing and reading information is formed, the portion located below the step on the substrate) becomes extremely thick. there were. For example, a resist having a viscosity of 800 cp (= mPas) was applied on a substrate with a step of 10 βm so that the resist film thickness in the rear region was 5 m. At this time, the resist film thickness in the tip region was 13 im. When the resist film thickness is large in this way, there is a problem that, for example, it is impossible to form a narrow track pattern of 1.5 tm or less due to the relationship between the depth of focus of the exposure apparatus and the resolution. Also, if the pattern interval can be formed and the frame interval of the track portion is 1.5 μπι, the aspect ratio between the frame interval and the frame height is as extremely high as 8 to 10. Therefore, there are problems that the fluidity of the plating solution to the track portion is poor, the plating film thickness is small, and the composition of the magnetic film is changed. As a method for solving such a problem, Japanese Patent Application Laid-Open No. 7-176016 discloses a method in which a frame is formed in a rear region of a substrate, and then the frame is heated to 100 to 140 ° C. A method is disclosed in which the upper magnetic core is formed by curing in a base and then forming a frame in the front end region of the substrate so as to be integrated with the frame in the rear region. According to this method, when forming the frame in the rear region, the resist film in the front region is formed. Since there is no need to consider the thickness, it is possible to make the resist film thickness optimal for the frame in the tip region.

However, in the invention of Japanese Patent Application Laid-Open No. 7-176016, it is considered that the thickness of the resist to be exposed is required to be about 5 m, so that it is difficult to form a narrow track pattern of 1.5 μιη or less. is there. In order to form a narrow track pattern, it is necessary to further reduce the thickness of the resist to be exposed. In addition, the exposed and developed shape of the thick resist of about 5 ^ m becomes a forward tapered shape in the case of a positive type resist, that is, the shape of the upper magnetic core becomes an inverted tapered shape. . In the case of a negative resist, the resist shape is an inverted tapered shape, that is, the shape of the upper magnetic core is a forward tapered shape. It is difficult to make the shape of such a thick photoresist vertical, and thus it is also difficult to make the shape of the magnetic core vertical.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a thin-film magnetic head which has a narrow magnetic track width with high precision and a vertically shaped upper magnetic core, does not cause writing or reading, and a magnetoresistive effect using the same. An object of the present invention is to provide a recording / reproducing separation type head comprising a combination with a die reproducing head, a magnetic disk device having a large capacity and a high recording density, and a method of manufacturing a thin film magnetic head. Disclosure of the invention

According to the present invention, there is provided a lower magnetic core, one end of which is laminated on the lower magnetic core and connected to one end of the lower magnetic core, and the other end is connected to the other end of the lower magnetic core via a magnetic gap. An upper magnetic core facing to form a magnetic circuit with the lower magnetic core, a conductor coil provided between the lower magnetic core and the upper magnetic core, the lower magnetic core, the upper magnetic core, and the conductor coil A thin-film magnetic head comprising: an insulating film for electrically insulating The magnetic core has a square cross section at the tip, a track width of 1.5 m or less, and a thickness of the upper magnetic core is larger than the track width. I do.

Further, according to the present invention, the tip of the upper magnetic core has a ratio (w 2 Zw l) of a track width (wl) to a width (w 2) of an upper portion thereof of 1.3 or less based on the above-described preconditions. The track width is 1.5 μm or less, the thickness of the upper magnetic core is larger than the track width, and the entire upper magnetic core has substantially the same thickness. The track width is not more than 1.5 ^ m, and the upper magnetic core has a tip whose thickness is larger than the track width and has substantially the same thickness as a whole. It has one of the requirements that the track width is 1.5 μιη or less, and its thickness is preferably 1.5 to 5 times, more preferably 1.5 to 3 times the track width.

The present invention relates to a recording / reproducing separation type head in which an inductive recording head and a magneto-resistance effect type reproducing head are integrally formed, and the track width of the recording head and the reproducing head. Are less than 1.5 μιη, and the track width of the recording head is slightly larger in submicron order than the track width of the playback head. I prefer to do that.

The present invention provides a recording / reproducing separation type head in which an inductive recording head and a magnetoresistive effect reproducing head are integrally formed,

The recording head is stacked on the lower magnetic core, and one end of the recording head is connected to one end of the lower magnetic core, and the other end is connected to the other end of the lower magnetic core via a magnetic gap. An upper magnetic core facing the lower magnetic core to form a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and a lower magnetic core, an upper magnetic core, and a conductor coil. And an insulating film electrically insulating each other, and a thickness of the upper magnetic core. Is larger than the track width,

The reproducing head has first and second magnetic layers of ferromagnetic material separated by a non-magnetic metal layer, and an antiferromagnetic layer provided in contact with one of the magnetic layers. Wherein the magnetization direction of the first magnetic layer of the ferromagnetic material is a direction perpendicular to the magnetization direction of the second layer when the applied magnetic field is zero.

In the recording / reproducing separation type head according to the present invention, the recording head and the reproducing head each have a thin film including a soft magnetic layer, a nonmagnetic layer, a ferromagnetic layer, and an antiferromagnetic layer. The thin film has a magnetoresistive effect in which the magnetization of the soft magnetic layer rotates in response to an external magnetic field to change the relative angle with respect to the magnetization of the ferromagnetic layer. Or a stacked structure of a first ferromagnetic layer, a second ferromagnetic layer and a third ferromagnetic layer, or the reproducing head converts a magnetic signal into an electric signal using a magnetoresistive effect. A pair of electrodes for allowing a signal detection current to flow through the magnetoresistive film; and an oxide antiferromagnetic film disposed below the magnetoresistive film. At least the magnetoresistance effect between the resistance effect film and the oxide antiferromagnetic film. At least a non-magnetic film magnetically sensitive portion of the film is characterized in that it has one layer.

The present invention provides a magnetic disk for recording information, an inductive recording head for writing the information on the magnetic disk, and a magnetoresistive head for reproducing the information written on the magnetic disk. A head / disk assembly comprising: a recording / reproducing separation type head integrally formed with the recording head; and a driving means for rotating the disk, wherein the recording head or the recording / reproducing separation type head is provided. The head is constituted by the aforementioned thin-film magnetic head or the aforementioned recording / reproducing separation type head. Further, the present invention provides a magnetic disk device having a plurality of head disk assemblies as described above, wherein the recording head or the recording / reproducing separation type head is the thin film magnetic head described above or the recording / reproducing head described above. It is composed of a separate head.

The thin-film magnetic head according to the present invention forms a frame on a substrate having a lower magnetic core, a magnetic gap, a conductor coil, and an insulating film, then forms a plating film, and is then surrounded by the frame. An upper magnetic core is formed by etching the plating film using a mask in a region, and a track width w1 at which the upper magnetic core contacts the magnetic gap has a width of 1.5 m. The ratio of the track width wl to the thickness t of the upper magnetic core is as follows:

It is preferable that (t / w 1) be 2 or more.

A track width at which the upper magnetic core contacts the magnetic gap;

The ratio (w 2 Z w l) of (w 1) to the width (w 2) of the upper part of the upper magnetic core is preferably 1.3 or less.

The above-mentioned thin-film magnetic head forms a plating film after forming a frame on a substrate having a lower magnetic core, a magnetic gap, a conductor coil, and an insulating film, and thereafter is surrounded by the frame. When the upper magnetic core is formed by etching the plating film using a mask as a region, two or more multilayer films having a resist layer as an uppermost layer are formed on the substrate. The thin-film magnetic head is formed so as to have an optimum thickness in the front end region of the substrate where the magnetic gap is formed, and at least the uppermost layer resist of the multilayer film is formed in the upper magnetic core. After patterning into a shape corresponding to the tip region, the lower layer portion below the resist layer is etched using the patterned resist as a mask to form a first flat portion corresponding to the tip region of the upper magnetic core. A first step of forming a beam, A resist is formed on the substrate on which the first frame is formed so that the frame has an optimum thickness in a rear region of the substrate on which the conductor coil and the insulating film of the conductor coil are formed. Then, the resist is patterned so that a second film corresponding to a portion formed in the rear region of the upper magnetic core is integrated with the first frame. This can be achieved by a manufacturing method for forming the frame. Reactive ion etching may be used in the etching step, the uppermost resist may be a Si-containing resist, or the multilayer film may be an organic film, an intermediate film, or a lowermost layer. Ri Do three-layered film of the upper layer registry, the said intermediate layer is made of an inorganic film, particularly _{S i, S i 0 2,} a 1, a 1 2 0 3, T i, T i 0 2, T a, _{_{T a 2 0 Β, W,}} N even b caries Chi rather small 1 TsugaYoshimi or teeth rather, especially was sputtering or for S i 0 _2, after applying the spin-on-glass, arbitrary preferred to sintering.

The organic film is made of a resist, and is subjected to a curing treatment after the formation of the first frame, and the curing treatment is performed by irradiation with far ultraviolet rays or reactive ion etching. The organic film is made of polyimide and its derivatives, polydimethyldaltarimide (PMGI) and its derivatives, polymethyl methacrylate (PMMA) and its derivatives, benzocyclobutene (BCB) and its derivatives, An electron beam resist is used for the uppermost layer resist, an electron beam lithography method is used for exposing the electron beam resist, and an exposure of the uppermost layer resist is included. The phase shift method or the modified illumination method can be used for light.

Further, after forming the second frame in the rear region first, the first frame may be formed so as to be integrated with the second frame. Further, the thin-film magnetic head according to the present invention comprises the steps of: forming a frame on a substrate having a lower magnetic core, a magnetic gap, a conductor coil, and an insulating film, forming a plating film; A method of forming an upper magnetic core by etching the plating film using a mask in a region surrounded by a frame,

After forming an organic pattern on the substrate on which the conductor coil and the insulating film of the conductor coil are formed, a multilayer film having two or more layers having a resist layer as an uppermost layer is formed. A thin film magnetic head is formed so as to have an optimum thickness in a front end region of the substrate where the magnetic gap is formed, and an uppermost layer resist of the multilayer film has a shape corresponding to the frame. After patterning, the frame is formed by etching the organic pattern in the lower layer portion below the resist layer and in the rear region using the buttered resist as a mask.

The etching step, the uppermost layer resist, the multilayer film, the intermediate film, and the uppermost layer resist are the same as described above.

As described above, according to the present invention, it is possible to prevent signal bleeding and reading bleeding of a magnetic medium.

The multilayer film can be formed by varnish-like substance spin coating, sputtering, CVD, vapor deposition, electrodeposition, and the like. The film thickness of the lower film may be an optimum film thickness as a frame in the region of the tip. As the uppermost resist, a Si-containing resist, a normal resist, an electron beam resist, or the like can be used, and a thin resist of 像 μηι or less can be used, so that high resolution is possible. Since the Si-containing resist has high resistance to dry etching with oxygen, the underlying organic film can be dry-etched with oxygen. In the case of using a normal resist or electron beam resist, the pattern is temporarily transferred to the intermediate film, and then the intermediate film is removed. Etch the lower layer on the mask. Etching that can be anisotropically etched, such as reactive ion etching or ion milling, is preferable. As an intermediate film, an inorganic film can be used as a mask material for oxygen-based dry etching of an underlying organic film. Is the inorganic film _{materials, S i, S i 0 2} , A 1, A 1 0 3, T i, T i 0 2, T a, T a 2 0 6, W, N b , etc. are available These can all be formed by a sputtering method. S i 0 ₂ is, the spin-on-glass and Supinko door, it can also be obtained me by the sintering. Is an etching gas, S i, S i 0, T i, T i 0 2, T a,

_{T a 0 B, W, N} b _{_{is, SF e, CHF 3, CF}} 4 or the like of full Tsu Motokei gas, was or, C 1 _2, BC 1 ₃ such as chlorine-based gas can be used, A 1, the a 1 ₂ 0 ₃ chlorine-based gas such as C 1 _2, BC 1 ₃ can be used. Using the pattern of the obtained intermediate film, the lower layer is dry-etched with an oxygen-based gas, whereby a frame at the tip can be formed. Apply resist to optimize the frame height in the rear area, but use a high viscosity normal resist or photosensitive polyimide. At this time, if the lower part of the first frame is a resist, it may be dissolved by the solvent of the resist of the second frame. Good. As the hardening treatment, it is preferable to perform surface treatment by irradiating deep ultraviolet rays or reactive ion etching. When irradiating with far ultraviolet rays while heating to a temperature of 80 ° C or more in a vacuum, curing proceeds rapidly. The hardening of the surface using reactive etching may be performed, for example, using CHF ₃ or the like for about 30 seconds. If a material that does not dissolve in the solvent of the resist of the second frame is used in the lower layer of the first frame, a curing treatment is not necessary. Mido and its derivatives, Polydimethyl phthalimide (PMGI) and its derivatives, Polymethyl methacrylate (PMMA) and its derivatives, benzocyclobutene (BCB) and its derivatives, epoxy and its derivatives. Polyimide is available from Hitachi Chemical and Shin-Etsu Chemical, polydimethyldaltalimide and polymethyl methacrylate are available from Microlithography Chemicals, and benzocyclobutene is available from Dow Chemical. is there. In this manufacturing process, the first frame may be formed after the second frame is formed first. In this case, after forming the second frame, it is better to perform the same curing treatment as that of the first frame. Alternatively, after forming an organic pattern in the rear region, a frame in the front region can be formed. In this case, the organic material pattern may be the shape of the second frame, or an organic material pattern may be formed over the entire rear region on the step, and may be patterned together by etching at the time of forming the frame at the front end region. May be.

The thin-film magnetic head according to the present invention is formed on a lower magnetic film and a lower magnetic film, one end of which is in contact with one end of the lower magnetic film, and the other end is connected to the other end of the lower magnetic film via a magnetic gap. An upper magnetic film opposing, thereby forming a magnetic circuit having a magnetic gap in part with the lower magnetic film, a conductor coil passing between the two magnetic films and intersecting the magnetic circuit, and having a recording wavelength of 0.3 to ~

At 0.97 μm, the following equation

Here in [rho _tau Paul thickness (μ ιη), B s is the saturation magnetic flux density of the upper and lower magnetic, layer (T), e represents a recording wavelength (tm).

It is preferable to have a pole thickness that satisfies the following.

When the track width of the thin-film magnetic head is reduced to increase the track density, the output decreases proportionately. To compensate for this, thin-film magnetic It is desirable to increase the output by increasing the number of coil turns of the head, specifically, it is desirable that the number of turns is 17 or more.

Thin-film magnetic heads are used by creating a magnetic film on a non-magnetic substrate and then processing it into a slider shape. In this case, the substrate material may be alumina, zirconia, silicon carbide, or an oxide having a spinel structure.

M g A 1 ₂ 0 ₃ arbitrariness desirable to use a ceramic box like.

The slider shape of the thin-film magnetic head can be used as a positive pressure slider shape with a reduced levitation force on the side near the head core tip, or a negative pressure slider shape with the opposite. .

As the magnetic core material of the thin-film magnetic head, it is desirable to use a magnetic material having a high saturation magnetic flux density, particularly a material having a saturation magnetic flux density of 1 Tesla or more, for both the upper magnetic film and the lower magnetic film. As such a magnetic material, there is 75 to 85 atomic% of nickel-ferrous crystalline, cobalt-based amorphous and crystalline or iron-based crystalline alloy represented by permalloy. Each of the upper and lower magnetic films may have a multilayer structure. In this case, a magnetic film and a nonmagnetic layer are alternately laminated to form a multilayer film. As the non-magnetic film, an insulating film such as alumina or silicon oxide is desirable. When alternately laminating a non-magnetic film and a magnetic film, it is desirable that the magnetic film thickness of each layer be the same. Of course, the magnetic film thickness of each layer may be changed. The total number of layers of the multilayer film is two or more, that is, a minimum, and two or more magnetic films and one nonmagnetic film. Magnetic layers and non-magnetic layers are alternately laminated to form a multilayer film, which not only improves high-frequency magnetic permeability by reducing eddy currents, but also becomes a shape close to a single magnetic domain, resulting in domain wall displacement. It is also effective in stabilizing the playback output by suppressing the noise. In addition, by using a magnetic material having a high saturation magnetic flux density, a high magnetic flux density and a strong magnetic field can be generated to improve the overlap characteristics. As means for forming a multilayer film, A putter method, a plating method, or the like can be used.

The reproducing head according to the present invention includes: a magnetoresistive effect film whose electric resistance changes by a magnetic field; a lateral bias film for applying a lateral bias magnetic field to the magnetoresistive film; A pair of permanent magnets for applying a longitudinal bias to the magnetoresistive effect film provided in contact with both ends of the magnetoresistive effect film, the magnetoresistive effect film having a separation film provided therebetween; A pair of electrode films provided on the stone film and the permanent magnet film for flowing a signal detection current to the magnetoresistive film; and preferably, the thickness of the permanent magnet film is equal to that of the magnetoresistive film. It is characterized by being smaller than the thickness.

The permanent magnet film is made of a Co—Pt alloy, a Co—Cr—Pt alloy, or a Ti oxide, V oxide, Zr oxide, Nb oxide, Mo oxide It is preferable to use an alloy containing at least one element selected from the group consisting of oxides, Hf oxides, Ta oxides, W oxides, A1 oxides, Si oxides, and Cr oxides.

It is preferable that the permanent magnet film has a composition represented by (Equation 1) or (Equation 2).

Co _a Cr _b P t _c or… (Equation 1)

(Co _e Cr _b Pt _c ) a-. (MO,… (Equation 2)

(However, x = 0.01 ~ 0.20, y: 0 ~ 3, a: 0.7 ~ 0.9b: 0 ~ 0.15, C: 0.03-0.1 5, M: at least one of Ti, V, Zr, Mo, Hf, Ta, W, A1, Si, and Cr)

It is preferable that the soft magnetic thin film for applying a transverse bias magnetic field to the magnetoresistive effect film has a specific resistance of 70 μΩcm or more. It is preferable that the lateral bias film is made of a nickel-iron alloy containing 78 to 84 atomic% of nickel. The reproducing head according to the present invention is provided in contact with a pair of permanent magnet films provided on a substrate, a pair of electrodes formed on each of the permanent magnet films, and the permanent magnet. A magnetoresistive effect element film, wherein the element film is formed by sequentially forming an antiferromagnetic film made of nickel oxide, two ferromagnetic films, a nonmagnetic metal film, and a soft magnetic film from the substrate side. Is preferred.

The two-layered ferromagnetic film is preferably composed of an Ni alloy of 70 to 95 atomic% from the substrate side and a Co layer. The two ferromagnetic films are preferably composed of a soft magnetic film from the antiferromagnetic side and a soft magnetic film having a higher magnetoresistance ratio than the soft magnetic film.

A reproduction head according to the present invention is provided in contact with a pair of permanent magnet films provided on a substrate, a pair of electrodes formed on each of the permanent magnet films, and the permanent magnet. A magnetoresistive element film, wherein the element is composed of an antiferromagnetic film, a ferromagnetic film, a nonmagnetic film, a soft magnetic film, a nonmagnetic film, a ferromagnetic film, and an antiferromagnetic film sequentially from the substrate side. Preferably, they are stacked.

In the present invention, it is preferable to use a Co-based magnetic film or a film obtained by adding an oxide to the Co-based magnetic film as the permanent magnet film disposed in the passive region at the end of the MR sensor. When an oxide is added to the Co-based magnetic film, the coercive force of the Co-based magnetic film increases.

In the present invention, the permanent magnet film is a multilayer film divided by a nonmagnetic layer. The coercive force of a single-layer C 0 permanent magnet film is 10 η π! It takes the maximum value at ~ 30 nm. Therefore, it is preferable that the permanent magnet film has a multilayer structure divided by a nonmagnetic layer.

The recycled head according to the present invention is a nickel-iron alloy, cobalt, one of nickel-iron-cobalt alloys, zirconium oxide, aluminum oxide, hafnium oxide, titanium oxide, perylium oxide, and magnesium oxide. , Rare earth oxygen compounds, zirconium nitride, hafnium nitride, aluminum nitride By using a soft magnetic thin film composed of at least one compound selected from the group consisting of titanium nitride, beryllium nitride, magnesium nitride, silicon nitride, and a rare earth nitrogen compound for the bias film, the reproduction output can be increased. improves. It is preferable that the amount of the compound contained in the bias film is 3 to 20% based on all atoms except oxygen and nitrogen. This is because when the amount of the compound is 3% or less, the increase in electric resistance is small, and when the amount is 20% or more, the saturation magnetic flux density decreases, and the value is not sufficient as a bias film. Although the specific resistance of the bias film of the present invention increases almost in proportion to the amount of the compound added, the magnetoresistance effect type magnetic head may have a specific resistance of 70 μΩcm or more. I like it. This is because the output of the magnetoresistive head is reduced unless the specific resistance of the bias film is sufficiently large compared to the specific resistance of the magnetoresistive film. This is because the specific resistance of the magnetoresistive film is 20 to 3 μμΩ, and the specific resistance of the bias film is at least twice as a guide.

The bias film of the present invention can be manufactured by a method such as vapor deposition, sputtering, or ion beam sputtering. The target for sputtering or ion beam sputtering is to mix an alloy powder composed of nickel, iron, cobalt, etc. with a compound powder by an appropriate method, and then sinter and mold the powder. A target in which a compound chip is placed on a metal target made of iron, cobalt, or the like may be used. By using such a target, the alloy and the compound made of nickel, iron, cobalt, etc. are vapor-deposited at the same time. can do. In the bias film of the present invention, a metal target composed of nickel, iron, cobalt, or the like and a compound target are arranged in a sputtering apparatus, and each particle emitted from the target is disposed. It can also be produced by a method in which the particles are substantially mixed on the substrate. As the antiferromagnetic film according to the present invention, Nigel oxide is preferable, and in addition, an iron-mangan alloy thin film, a chromium-manganese alloy, a chromium-aluminum alloy film, or the like is used.

As the permanent magnet film which is a hard magnetic film in the present invention, the aforementioned cobalt-platinum alloy or iron-cobalt terbium alloy film is used. A hard magnetic film is a magnetic film whose magnetization is hardly changed by an external magnetic field, and it is assumed that the coercive force is, for example, 100 or more Oersteds. Since the direction of the magnetization hardly changes even if the addition is performed, the same effect as the antiferromagnetic film is obtained. That is, when formed in close contact with another magnetic film, it has the property of applying unidirectional anisotropy due to exchange coupling bias, and forms a longitudinal bias magnetic field in the magnetic resistance effect film.

The magnetic film includes an alloy of Ni 70 to 95 atomic%, Fe 5 to 30 atomic% and Co 1 to 5 atomic%, or Co 30 to 85 atomic%, Ni 2 to It is preferable to use an alloy of 30 atomic% and Fe of 2 to 50 atomic%. In addition, a permalloy, an alloy of permender, or the like may be used. In other words, it is preferable to use a material that is ferromagnetic and has good soft magnetic characteristics.

It is preferable to use Au, Ag, and Cu for the nonmagnetic conductive film. In addition, Cr, Pt, Pd, Ru, Rh, or the like, or an alloy thereof may be used. May be used. That is, it is preferable to use a material that does not have spontaneous magnetization at room temperature and has good electron permeability. It is preferable that each of the above films has a thickness of about 2 to 1000 persons.

Also, an extremely thin non-magnetic insulating film can be used instead of the non-magnetic conductive film. In other words, this film is sufficient as long as electrons can move between the magnetic films, and for example, a tunnel effect may be used. In this case, the non-magnetic insulating film is capable of tunneling electrons. It is necessary to be thin each time, and is generally formed at 100 A or less, and substantially at 50 A or less. As a means for forming the nonmagnetic insulating film, a surface oxidation of the soft magnetic film, or an oxide film on the surface of a metal film formed separately on the soft magnetic film, for example, aluminum, is used as the nonmagnetic insulating film. It is preferable to use it. In addition, an aluminum oxide film or the like may be formed and used. That is, it is preferable to use a material having a property of blocking magnetic coupling between magnetic films.

Further, the substrate may be a base for forming these films, and may have a function as a slider of a magnetic disk device. The material may have a Ti of 5% or less. Ceramic sintered bodies such as alumina containing C and stabilized zirconia are preferred.

By having such a film configuration, the magnetoresistive effect element has a function of changing its electric resistance with respect to a weak external magnetic field, and the rate of change of the electric resistance is 5% to 10%. It has a great effect of%. For this reason, the magnetic recording / reproducing apparatus of the present invention also has a function of directly digitizing a signal recorded in an analog state at the time of reproduction, and further has a recording capacity per disc area, that is, a recording density. Has the effect of increasing the pressure.

The film may be formed by forming a flat film such as aluminum oxide or nickel oxide on a substrate, or iron, titanium, tantalum, zirconium, hafnium, niobium on a substrate. Alternatively, a film made of cobalt iron alloy or the like may be further formed as a base. The film on the substrate has the effect of forming a multilayer film evenly on the surface thereof, and preferably has a uniform and flat film structure on the surface of the substrate. Preferably, it is about 20 to 200 people for the film, and about 5 to 100 OA for the non-metal film.

The present invention relates to an antiferromagnetic film, a nonmagnetic film, a nonmagnetic film, a nonmagnetic film, and a hard magnetic film. It is preferable to have a film configuration, and it is preferable that the thickness of each of the antiferromagnetic film and the hard magnetic film is about 20 to 2000 persons.

The bias film laminated on the MR film other than the permanent magnet film in the present invention is preferably disposed on the substrate side more than the magnetic film and the non-magnetic film. It preferably has a function as a base film for improving wetting, and the magnetic domain structure of the magnetic film is made into a single magnetic domain by anisotropy, thereby suppressing generation of noise. As the film configuration, it is preferable to have a configuration of first and second magnetic films stacked via a non-magnetic conductive film and a bias film formed in close contact with the first magnetic film.

In particular, the first bias film, the first magnetic film, the non-magnetic film, the second magnetic film, the non-magnetic conductive film, the third magnetic film, the second bias film, and the electrodes laminated on the substrate. I prefer to be. The third magnetic film preferably has the same function as the first magnetic film magnetically.

The control of the bias direction of the bias film and the anisotropic direction of the magnetic film is preferably performed by appropriately applying a magnetic field according to the forming process when forming the multilayer film of the device. Alternatively, it is preferable to perform a heat treatment in a magnetic field during or after the formation of the multilayer film of the element.

In the formation of the film, it is preferable to control the direction and magnitude of the magnetic field in accordance with the film laminating process to control the bias application direction and the -axis anisotropy of the magnetic film.

Further, when performing a heat treatment in a magnetic field in forming the film, it is preferable to control the anisotropy of the bias film and the uniaxial anisotropy of the magnetic film.

When a hard magnetic film is laminated on the MR film, it is desirable that a method of applying a magnetic field to orient the magnetization of the hard magnetic film in a predetermined direction after fabricating the element. It is preferable that the material of the bias film has a high electric resistance. More specifically, it is preferable that the electrical resistivity be 5 × 10 ⁴ ohm centimeters (Ωcm) or more. The bias film prevents the output of the device from being reduced due to current leakage, and controls the laminated structure of the materials used, particularly the flatness, and enables the device to be laminated. When a nickel oxide (Ni0) film, which is substantially an insulator, is used as a bias film, the magnetic field sensitivity is particularly high, about 10 Oe, which is higher than the conventional one. A laminated structure with high reliability of about 2 to 4 times can be realized.

Further, the magnetic recording / reproducing apparatus of the present invention is provided with a magnetoresistive effect element for reading a magnetic field from a magnetization pattern written on a recording medium with a predetermined track width. On the other hand, the relationship between the length d (μτα) in the vertical direction and the track density Τ (track / inch) on the medium is d × 12.5 × 10 ³ ZT. This is preferred.

Further, a magnetic recording / reproducing apparatus according to the present invention includes a recording medium for magnetically storing signals, and a magnetic film sandwiched between non-magnetic conductive films by detecting a magnetic field leaking from the recording medium. And a magnetoresistance effect element having a touch structure, wherein a resistance change rate of 5.0 to 9.5% can be obtained with respect to a magnetic field of ± 80 e leaking from the recording medium. .

On the other hand, the total thickness of the magnetoresistive film of the present invention is also about 100 to 300 persons in order to prevent a decrease in output due to surface scattering. This is because the output of the magnetic film, especially the thickness of the soft magnetic film at the center of the film, does not decrease at all even when the thickness is 100 or less, especially when it is 10 to 20 people. This effect occurs because the mechanism of the magnetoresistance effect is caused by the interface of the magnetic film / non-magnetic film / magnetic film.

Further, the thickness of the magnetic film of the magnetoresistive element mounted in the present invention is preferably 5 to 100, particularly preferably 10 to 100. Separate each magnetic film The thickness of the nonmagnetic conductive film to be separated is preferably 5 to 100 OA. The thickness of this non-magnetic conductive film does not hinder electron conduction, and in particular, it is necessary to keep antiferromagnetic or ferromagnetic coupling between the magnetic films sufficiently small. For example, in the case of Cu, it is desirable to have about 10 to 30 people.

As a material of the magnetic film, particularly, a soft magnetic film, it is preferable to use an alloy of Ni 70 to 95 atomic% and Fe 5 to 30 atomic%.

Further, as a material for the magnetic film, it is preferable that Co is appropriately added to the above Ni—Fe alloy in a range of 5 atomic% or less. Or C o 30 ~

It is desirable to use an alloy thin film having a face-centered cubic structure of 85 at%, 11 to 30 at%, and 62 to 50 at%. These are because they enable a good laminated structure to be formed, have excellent soft magnetic properties, and produce a greater magnetoresistance effect.

Also, it is preferable to use at least one of Au, Ag, and Cu as the material of the nonmagnetic conductive film. This is because these films produce a magnetoresistive effect when combined with a magnetic film, are excellent in electric conductivity, and enable formation of a favorable laminated structure.

One example of the configuration of the magnetoresistive element of the present invention is that a pair of NiO, NiFe, Cu, NiFe, Cu, NiFe, and NiO are sequentially stacked on a substrate. An electrode is provided. Alternatively, a film formed by sequentially laminating NiO, Co / NiFe, Cu, Co / iFe, Cu, Co / iFe, and NiO on a substrate may be used. It consists of a pair of electrodes.

In the magnetoresistive element according to the present invention, NiO, CoNiFe, Cu, NiFe, Cu, Co / iFe, and NiO are sequentially laminated on a substrate. It is preferred to have a pair of electrodes on the membrane. This is because these configurations are due to surface scattering It has the effect of extremely efficiently preventing the output from lowering, effectively increasing the output, and enabling the central film to be thinner, thereby reducing the sensitivity of the element due to the shape anisotropy of the magnetic film. This is because it can be prevented without a decrease in

The magnetic recording / reproducing apparatus of the present invention uses the magnetoresistive element as a reproducing section as described above, and can shorten the recording wavelength recorded on a recording medium with a high recording density. Also, it is possible to realize recording with a narrow recording track width, obtain a sufficient reproduction output, and maintain good recording. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a view of a thin-film magnetic head according to an embodiment of the present invention as viewed from a medium facing surface, and FIG. 2 is a manufacturing step in an example of the present invention in which a first frame forming step is performed by facing a medium. FIG. 3 is a schematic view of a cross section as viewed from a plane, FIG. 3 is a schematic view of a cross section as viewed from a medium facing surface in a first frame forming step in a manufacturing process according to an embodiment of the present invention, and FIG. FIG. 5 is a schematic cross-sectional view of the frame forming step as viewed from the cross-sectional direction of the head. FIG. 5 is a schematic perspective view of the cross section of the magnetic head in the manufacturing step in the embodiment of the present invention. FIG. 7 is a schematic view of a cross section of a head in a frame forming step of a manufacturing process in an embodiment of the present invention, FIG. 7 is a cross-sectional view of a tip of a thin film magnetic head, and FIG. Figure 9 shows the relationship between pole thickness X saturation magnetic flux density and A diagram showing the relationship with the recording wavelength, FIG. 10 is a cross-sectional view of a thin-film magnetic head, FIG. 11 is a perspective view of a read / write separation type head, and FIG. 12 is a magnetoresistive head. 13 is a perspective view of the negative pressure slider 1, FIG. 14 is an overall perspective view of the magnetic disk drive showing the head's disk assembly, and FIG. 15 is a part of the magnetic disk drive. Plan view, Fig. 16 FIG. 17 is a partial perspective view of a magnetoresistive head, FIG. 18 is a partial perspective view of a magnetoresistive head, and FIG. 19 is a partial perspective view of a magnetoresistive head. FIG. 20 is a partial perspective view of the magnetoresistive head, and FIG. 21 is a diagram of the magnetoresistive head.

1 1, 4 2, 6 2 is the lower magnetic core, 1 2 is the upper magnetic core, 2 1, 3 1, 4 1, 5 1, 6 1 is the substrate, 2, 3 2, 3 4, 4 8, 6 7 registry, 2 3 S i containing registry, 3 3 intermediate film S i 0 _2, 4 3, 6 3 magnetic formic Yap film, 4 4, 4 6, 5 3, 6 4, 6 6 Insulating film, 45, 54, 65 are conductor coils, 47, 68 are multilayer films, 52 is lower magnetic core and magnetic gap, 55 is first frame, 56 is second frame. Laem,

1 is a non-magnetic metal layer, 2 is a ferromagnetic second magnetic layer, 3 is an antiferromagnetic layer, 7 is a hard ferromagnetic layer, 8, 85 are electrodes, 10 is a magnetoresistive film, 1 1 is Ferromagnetic layer, 12 is nonmagnetic layer, 13 and 11 are soft magnetic layers, 14 is underlayer, 15 is high coercivity Co alloy film, 16 is soft magnetic film, and 17 is C o membrane, 18 is separation membrane

19 is a high coercivity magnetic film, 24 is a magnetic disk, 27 is a magnetic head, 26 is an actuator, 80 is a base, 81 is an upper shield, 82 is a lower shield, and 84 is an upper shield Magnetic core, 83 is lower magnetic film, 86 is magnetoresistive effect,

87 is a coil, 88 is a magnetic gap, 89 is a non-magnetic insulator, 91 is a magnetic domain control film, 110 is a lower shield film, 120 is a lower gap film, and 140 is a magnetic resistance Effect film, 145 is an oxide antiferromagnetic film, 150 is a shunt film,

155 is a soft film, 160 is a signal detection electrode, 170 is an upper gap film,

177 is a non-magnetic film, 180 is an upper shield film, and 101 is a non-magnetic substrate. BEST MODE FOR CARRYING OUT THE INVENTION

(Example 1) FIG. 1 is a diagram of an inductive recording thin-film magnetic head according to an embodiment of the present invention, as viewed from the medium facing surface (the magnification in the figure is not uniform). In the magnetic head of the present invention, the ratio (t / wl) of the track width wl of the upper magnetic core to its thickness t is 2 or more.

The manufacturing process of the magnetic head having the upper magnetic core is shown in FIGS. FIG. 2 is a flow diagram showing a frame forming process for the substrate 21 as viewed from the medium facing surface direction. (A) shows the Si-containing resist 23 (Hitachi Kasei's RU-160P-39) in the upper layer at 1.4 μηι, and the lower layer in the normal resist 22 (Tokyo Ohka OFPR8). Here, a multilayer film in which 600 μm) is laminated by 5 μπι is shown. Panel (b) shows that the upper layer resist was exposed and developed via a photomask to form a pattern for the first frame for the tip. (C) shows a state where the first layer is formed by etching the lower layer by reactive ion etching of oxygen using the pattern of the upper layer resist as a mask.

FIG. 3 is a flow chart showing a frame forming process for the substrate 31 in the same manner. In (a), a normal resist 34 (Tokyo Oka 0FPR800) is applied to the upper layer with a thickness of 0.7 μππ, and Sio ₂ is formed as an intermediate film 33 by a sputtering method at a thickness of 0.2 tm. Here, a multilayer film in which a normal resist (0FPR8600 manufactured by Tokyo Ohka Co., Ltd.) is laminated by 5 m as the lower layer film 32 is shown. The method of forming the S i 0 ₂ after applying a spin-on-glass may be a method of baking. (B) shows that the upper layer resist 34 was exposed and developed via a photomask to form a pattern for the first frame for the front end. (C) shows that the SiO ₂ of the intermediate film 33 was etched by reactive ion etching of CHF _{3 using} the pattern of the upper resist 34 as a mask. (d) shows that the lower layer resist 32 is etched by reactive ion etching of oxygen using the intermediate film 33 as a mask to form a first frame. The resist in the uppermost layer may be exposed by a phase shift method or a modified illumination method, or may be exposed by electron beam lithography using an electron beam resist. In both cases of Figs. 2 and 3, 5.6 J Zcni ^{2 was} applied to the substrate while baking it at 100 ° C in a vacuum, and then irradiated from the lower layer resist. To cure the frame. Instead of UV irradiation, for example, reactive ion etching of CHF ₃ or SF ₆ may be performed to form an effect film on the resist surface. When polyimide, polydimethyl daltarimide, polymethyl methacrylate, benzocyclobutene, etc. are used, no curing treatment is required.

FIG. 4 is a flow chart showing a manufacturing process as viewed from a cross section of a magnetic head. (a) shows where the magnetic gap film 43, the conductor coil 45, and the insulating films 44, 46 are formed on the lower magnetic core 42. (B) shows where the multilayer film 47 was formed. (C) shows where the first frame has been formed. (D) shows the case where a high-viscosity resist 48 (Shin-Etsu Chemical SIPR9332H) was applied. The resist 48 in this process is of high viscosity and is not only SIPR9332H manufactured by Shin-Etsu Chemical Co., Ltd., but also AZ4620 manufactured by Hext, STR1110 manufactured by Shipley, PMER manufactured by Tokyo Ohka Kogyo Co., Ltd. P-MH600MA-T— 1 is suitable. (E) shows that the second frame integrated with the first frame was formed by exposing and developing through a photomask.

FIG. 5 is a perspective view showing a magnetic head manufacturing process in the process of FIG. (A) shows where the magnetic gap film, the conductor coil 54 and the insulating film 53 are formed. (B) is a perspective view of the magnetic head showing where the first frame is formed. (C) is integrated with the first frame FIG. 4 is a perspective view of a magnetic head showing a portion where a second frame is formed. The permalloy was electrolytically deposited using the frame formed by the above method, and as shown in Fig. 1, the track width (w1) was 1.2 μm and the height (t) was A thin-film magnetic head with an upper magnetic core of 3.5 μm and an upper width (w 2) of the track portion of 1.4 jct m was produced. The (tw 1) ratio is 2.9.

FIG. 6 is a cross-sectional view of the thin-film magnetic head manufacturing process of the present invention (however, the magnification of the figure is not uniform). (A) shows where the magnetic gap film 63, the conductor coil 65, and the insulating films 64, 66 are formed. (B) shows the case where a highly viscous resist 67 (Shin-Etsu Chemical SIPR9332H) was applied and a film thickness of 5 μπι was obtained on the step. Instead of the resist, photosensitive polyimide—photosensitive benzocyclobutene may be used. (C) shows that the resist 67 pattern was formed on the step by performing exposure and development through a photomask. (D) shows an Si-containing resist (Hitachi Chemical RU-1600 P-39) in the upper layer at 1.4 μππ, and a normal resist 67 (Tokyo Ohka 0FPR8600) in the lower layer. This shows the point where the multi-layered film 68 having m layers was formed.

(e) Exposes and develops the upper layer resist through a photomask to form a pattern for the first frame for the front end portion as in Example 1, and forms a pattern for the upper layer resist. This shows that the lower layer was re-etched by reactive ion etching of oxygen using the mask as a mask to form a frame.

Or, as in Fig. 4, a normal resist (Tokyo Oka 0FPR800) is applied to the upper layer for 0.7 m, and SiO ₂ is used as an intermediate film in a 0.2 μππ form by sputtering. Then, as a lower film, a normal resist (Tokyo Ohka 0FPR8600) was laminated to form a multilayer film with a thickness of 5 Atm, and the upper resist was exposed and developed via a photomask to form a top layer. After forming the pattern for the first frame for The be sampled pattern as a mask S i 0 ₂ intermediate film re etched by the re active ion etching of CHF _3, Ri by the intermediate film underlying les Soo Bok Lee active ion etching of oxygen mask The frame may be formed by etching. Further, the exposure of the uppermost resist may be performed by a phase shift method or a modified illumination method, or may be performed by electron beam lithography using an electron beam resist. . The permalloy is electrolytically deposited using the frame formed by the above method, the track width (wl) is 1.2 μιη, the height (t) is 3.5 ^ m, and the track portion is The thin-film magnetic head with a width (w 2) of 1.4 μιη at the top of the thin film was fabricated (tw 1) ratio was 2.9.

In this embodiment, the magnetic film and the lower magnetic film were formed by the following electroplating method.

Ni + content: 16.7 g Zl, Fe ⁺⁺ content: 2.4 g / l, and in a plating bath containing other usual stress relaxation agents and surfactants, PH: 3 2.0, an inductive thin-film magnetic head with upper and lower magnetic cores was fabricated under the conditions of plating current density: 15 mA / cm ² . The track width is 4.0 να and the gap length is 0.4 μπι. The composition of this magnetic film is 42.4 Ni-Fe (% by weight), and the magnetic properties are as follows: saturation magnetic flux density (B _s ): 64 T; hard axis coercive force (H _CH ): 0.5 At 0 e, the specific resistance (p) was 48.1 t Q cin. The upper magnetic core 84, the lower magnetic core 83, and the coil 87. It has a magnetoresistive element 86 for reproduction, an electrode 85 for passing a sense current to the magnetoresistive element, a lower shield layer 82, and a slider 80.

FIG. 7 schematically shows the structure of the tip of the magnetic core of the thin-film magnetic head used in the magnetic disk device of the present invention. Symbol 36 is pole thickness, lower magnetism The length in which the film 84 and the upper magnetic film 83 are parallel at the tip of the head is a magnetic gap depth 38. Reference numeral 39 denotes the thickness of the disk-facing surface of the lower magnetic film, reference numeral 35 denotes the same thickness of the upper magnetic film, and reference numeral 37 denotes the magnetic gap length. 8 7 is a conductor coil. In a large-capacity magnetic disk device, an overwrite method that directly writes new information on already written information becomes important. At the time of a new write, the information that has already been written remains as noise for the new information, but its value is required to be as small as 122 dB or less.

Therefore, for a thin-film magnetic disk medium with a recording wavelength of 0.68 tm, a flying height of 0.1 μm, and a magnetic film thickness of 0.66 tm (film formation by sputtering), the coercive force of the thin-film magnetic disk and Then, the relationship with the magnetic field intensity generated from the thin-film magnetic head was examined. As a result, it is preferable to satisfy H _x ≥ H _c + 800 in order to obtain the required overwrite characteristics. In here, H _x is the magnetic field strength generated from the magnetic heads, the H _c is the coercive force of the thin film magnetic disks. In order to increase the magnetic field strength generated from the thin-film magnetic head so as to satisfy the above relational expression, it is important to increase the pole thickness. This is because the larger the pole thickness, the stronger the magnetic flux emitted from the tip of the magnetic core toward the thin-film magnetic disk. The storage capacity of magnetic disk units is increasing with the advancement of electronic computers. One means of achieving higher performance of this magnetic disk device is to shorten the recording wavelength.

Therefore, first, for a recording wavelength of 0.68 μm, the upper magnetic film, lower magnetic film, and magnetic gear were made using permalloy with a saturation magnetic flux density of 1 Tesla as the magnetic core material of the thin-film magnetic head. Figure 8 shows the results of a study on the relationship between the sum of the gap length (pole thickness) and the over- write characteristics. From Fig. 8, it can be seen that the overwrite characteristics have higher values as the pole thickness increases. Since the overlay characteristics are required to be less than 22 dB, the pole thickness must be 5.56 m or more. As a result, the write and read characteristics were satisfied, the recording wavelength was 0.68 μm, and the pole length was 8.6 μm. The recording density was examined. In order to keep the gap depth large while maintaining the overwrite characteristics at less than 122 dB, it is effective to keep the gap length between 0.2 and 0.4 m.

Further, the magnetic film thickness of the recording medium is preferably from 0.04 to 0.06 m in consideration of the fluctuation during film formation. The flying height is more than 0.05 μιη from the viewpoint of sliding resistance, and the minimum recording wavelength is 0.3 μm.

Figure 9 shows the results obtained from the above equation based on the relationship between the recording wavelength at which an overwrite of less than 122 dB can be obtained, the product of the pole thickness, and the saturation magnetic flux density of the magnetic core material. And those obtained above the oblique lines. As shown in Fig. 10, in order to achieve a high-density recording with a recording wavelength of 0.5 tm or less, the pole thickness should be 5 μπι or more when the saturation magnetic flux density is 1 Tesla. If the thickness of the lower magnetic film is 2 m, the thickness of the upper magnetic film is about 3 μπι or more. As a result, the ratio of the track width (w l) of the upper magnetic film to its thickness (t) is set to 2 or more.

FIG. 11 is a cross-sectional view of the inductive type thin film magnetic head of the present invention. This thin film head comprises an upper seal film 81 and the above-mentioned magnetic film adhered thereon. An upper magnetic film 84 and an upper magnetic film 83 are provided. A non-magnetic insulator 89 is attached between layers 84 and 83. A portion of the insulator defines a magnetic gap 88, which interacts in a transducing relationship with a magnetic medium written, for example, in an air-pairing relationship by well known techniques. The support is in the form of a slider having an air bearing (ABS), which is in close proximity to the media of the rotating disk during disk file operation and is in a floating relationship. You.

The thin-film magnetic head is a pack having a back gap 90 formed by the upper magnetic film 84 and the lower magnetic film 83, and the gap 90 formed by the interposed coil 87. Separated from the

The continuous coil 87 is a layer formed on the lower magnetic layer 83 by, for example, plating, and these are electromagnetically coupled. Coil 87 has an electrical contact in the center of the coil, which is filled with non-magnetic insulator 89, and also has a larger area at the outer end of the coil as an electrical contact. The contacts are connected to an external electric wire and a read / write signal processing head circuit (not shown).

In the present invention, the coil 87 made of a single layer has a slightly distorted elliptical shape, and a portion having a small cross-sectional area is disposed closest to the magnetic gap. As the distance from becomes larger, the cross-sectional area gradually increases.

Knock gap 96 is located relatively close to the magnetic gap ABS.

According to this example, it was found that recording was possible at an areal recording density of 1 gigabit in ² or more, and extremely stable electromagnetic conversion characteristics with an output fluctuation rate of 5% or less during reading were obtained. . In particular, when the track width of the upper magnetic core is assumed to be 2.Ο μιη, the areal recording density of 4 gigabits / in ² or more is obtained and the fluctuation rate in reading is as low as 2% or less. Was something.

(Example 2)

Fig. 11 is a conceptual diagram of an integrated recording / reproducing separation head using the thin-film magnetic head of Example 1 as a recording head and a magnetoresistive head for reproduction. It is. The recording / reproducing separation type head includes an inductive recording / reproducing head using the element of the present invention, and a shield portion for preventing the reproducing head from being confused due to a leakage magnetic field. Here, the mounting with the recording head for horizontal magnetic recording has been described, but the magnetoresistive element of the present invention may be combined with the head for perpendicular magnetic recording and used for perpendicular recording. The head is the substrate

A reproducing head composed of a lower shield film 82, a magnetoresistive film 86, an electrode 85, and a lower shield film 81, a top magnetic film 84, a coil 87, and a lower magnetic film 8 And a recording head consisting of three. With this head, a signal is written on a recording medium and a signal is read from the recording medium. By forming the sensing part of the reproducing head and the magnetic gap of the recording head on the same slider in this way, they can be positioned simultaneously on the same track. This head was machined into a slider and mounted on a magnetic recording and playback device. 9 1 is a magnetic domain control film.

FIG. 12 is a partial cross-sectional view of a magnetic head (MR sensor) using a spin-valve magnetoresistive film as the magnetoresistive head used in this embodiment.

The MR sensor of the present invention includes a first ferromagnetic layer 10 of a soft ferromagnetic material made of a permalloy alloy serving as a pin layer and a nonmagnetic metal layer 1 on a suitable substrate 9 such as glass or ceramic. And a second magnetic layer 2 of a ferromagnetic material made of a permalloy alloy serving as a fixed layer. The ferromagnetic layers 10 and 2 are arranged such that when no magnetic field is applied, the individual magnetization directions have an angular difference of about 90 degrees. Further, the magnetization direction of the second magnetic layer 2 is fixed to the same direction as the magnetic field direction of the magnetic medium. When no magnetic field is applied, the magnetization direction of the first magnetic layer 10 of the soft ferromagnetic material is in relation to the magnetic field direction of the second magnetic layer 2.

90 degrees inclined. The magnetization is applied to the first magnetic layer 10 in response to the applied magnetic field. Rolling occurs and changes.

In this embodiment, the first magnetic layer 10, the nonmagnetic metal layer 1, the second magnetic layer 2, and the antiferromagnetic material layer 3 are described later with reference to FIGS. 0 can be used film structure used in the laminate structure shown in FIG., Moreover, a hard strong magnetic layer _{7 C o 8 2 C ra P} ta, C oso C r 8 P t 8 (Z r 0 2 ) ₃ can be used. The film configurations of FIGS. 16, 17 and 18 have film configurations corresponding to the first magnetic layer 10 and the second magnetic layer 2 in this embodiment, and their magnetic field directions. Are formed in the same manner as described above.

In this embodiment, an appropriate lower film 5 such as, for example, Ta, Ru, or CrV is applied on the substrate 9 before the first magnetic layer 10 of the soft ferromagnetic material is deposited. To wear. The purpose of attaching the lower film 5 is to optimize the structure, crystal grain size, and morphology of the layer to be attached later. Layer morphology is very important for obtaining a large MR effect. This is because a very thin spacer layer of the nonmagnetic metal layer 1 can be used depending on the form of the layer. In addition, the lower layer should have high electrical resistance to minimize the effects of shunting. The lower layer can be used in an inverted structure as described above. If the substrate 9 has a sufficiently high electric resistance, is sufficiently flat, and has an appropriate crystal structure, the lower film 5 is unnecessary.

As the first magnetic layer 10, means for generating a bias in the vertical direction for maintaining a single domain state in a direction parallel to the paper surface is used. As means for generating a bias in the vertical direction, a hard ferromagnetic layer 7 having a high coercive force, a high squareness, and a high electric resistance is used. The hard ferromagnetic layer 7 is in contact with the region of the end of the first magnetic layer 10 of the soft ferromagnetic material. The magnetization direction of the hard ferromagnetic layer 7 is parallel to the paper.

The antiferromagnetic layer is brought into contact with and attached to the end region of the first magnetic layer 10. To produce the required vertical bias. These antiferromagnetic layers preferably have sufficiently different blocking temperatures than the antiferromagnetic layer 3 used to fix the magnetization direction of the ferromagnetic second magnetic layer 2. Next, a layer of a high resistance material such as Ta is preferably deposited over the entire MR sensor. An electrode 8 is provided, and a circuit is formed between the MR sensor structure and the current source and the detecting means.

FIG. 13 is a perspective view of a negative pressure slider. The load slider 70 has a negative pressure generation surface 78 surrounded by an air introduction surface 79 and two positive pressure generation surfaces 77, 77 for generating a levitation force. At the boundary between the positive and negative pressure generating surfaces 77, 77 and the negative pressure generating surface 73, a groove 74 having a larger step than the negative pressure generating surface 78 is formed. At the air outflow end 75, an inductive type recording head for recording information on a magnetic disk and an MR sensor for reproducing, which will be described later, record the schematic structure shown in FIG. It has a reproduction-separated thin-film magnetic head element 79.

When the negative pressure slider 70 floats, the air introduced from the air introduction surface 79 is expanded on the negative pressure generation surface 73, and at that time, the air flows toward the groove 74. Therefore, an air flow from the air introduction surface 79 to the air outflow end 75 also exists inside the groove 74. Therefore, even if the dust floating in the air when the negative pressure slider 70 rises is introduced from the air introduction surface 79, it is introduced into the groove 74, and is pushed by the air flow inside the groove 74. The air is discharged from the negative pressure slider 70 from the air outflow end 78. Further, when the negative pressure slider 70 floats, there is always air flow inside the groove 4 and there is no stagnation or the like, so that dust does not aggregate.

FIG. 14 shows an overall view of a magnetic disk drive which is an example of the present invention. The configuration of this magnetic disk drive is a magnetic disk 24 for recording information, A DC motor (not shown) for rotating this, a magnetic head 27 for writing and reading information, and a positioning device for means for supporting and changing the position with respect to the magnetic disk, that is, It consists of an actuator, a poiscoil motor, and an air filter to keep the inside of the equipment clean. The actuator consists of a carriage, rails and bearings, and the voice coil motor consists of a voice coil and a magnet. These figures show an example in which four magnetic disks are mounted on the same rotating shaft to increase the total storage capacity.

FIG. 15 is a plan view of a magnetic disk device according to the present invention. In the figure, 24 is a magnetic disk, 27 is a magnetic head, 28 is a gimbal system support device, and 26 is an actuator (positioning device). The magnetic disk 24 is driven to rotate in the direction of arrow a by a rotation drive mechanism. Magnetic heads 2 7 is supported by the supporting device, Ri by the Akuchiyue Ichita 2 6, the rotation diameter 0, on the arrow b, or is positioned is driven in the direction of b _2, its Reniyo predetermined Siri I Sunda T, in ~ T _n, the magnetic recording, reproduction is performed.

The magnetic disk ₂₄ is a medium having a surface roughness R _{Μ Α Χ} of 100 or less, preferably ₅₀ or less, and having good surface properties. The magnetic disk 24 has a magnetic recording layer formed on a surface of a rigid substrate by a vacuum film forming method. Since the thickness of the magnetic recording layer formed by the vacuum film forming method is 0.5 μm or less, the surface properties of the rigid substrate are directly reflected as the surface properties of the recording layer. Therefore, a rigid substrate having a surface roughness RMAX of 10 OA or less is used. As such a rigid substrate, a rigid substrate mainly composed of glass, chemically reinforced soda-aluminosilicate glass or ceramic is suitable.

When the magnetic layer is made of metal or alloy, an oxide layer, a nitride, It is desirable to provide a layer or make the surface an oxide film. It is also desirable to use a carbon protective film. By doing so, the durability of the magnetic recording layer is improved, and damage to the magnetic disk can be prevented even when recording / reproducing with an extremely low flying height or during contact, start, and stop. The oxide layer and the nitride layer can be formed by reactive sputtering, reactive evaporation, or the like. The oxide film can be formed by intentionally oxidizing the surface of the magnetic recording layer by a reactive plasma treatment or the like. The magnetic disk may be either perpendicular recording in which the recording residual magnetization of the magnetic recording layer is a component perpendicular to the film surface as a main component, or in-plane recording in which the in-plane component is a main component. Although not shown, a lubricant may be applied to the surface of the magnetic recording layer.

However, many of the elliptical coils are relatively densely packed between the back gap 96 and the magnetic gap 88, and the width or cross-sectional diameter of the coil is small in this area. In addition, a large cross-sectional diameter at the portion farthest from the magnetic gap results in a decrease in electrical resistance. In addition, elliptical (elliptical) coils have no corners, sharp corners or edges, and have low resistance to current. In addition, the elliptical shape requires less overall length of the conductor than a rectangular or circular (annular) coil. As a result of these advantages, the total resistance of the coil is relatively small, heat generation is small, and appropriate heat dissipation is obtained. Since the amount of heat is reduced, the thin film layer is prevented from collapsing, extending and expanding, and the cause of the pole-tip protrusion in the ABS is eliminated.

An elliptical coil shape in which the change in width progresses almost uniformly can be attached by a conventional plating technique that is less expensive than sputtering or evaporation. In coils with other shapes, especially angular shapes, the adhesion tends to be uneven in width. Removal of corners, sharps and edges gives less mechanical stress to the finished coil

In this embodiment, the coil wound in a number of turns is almost elliptical and formed between the magnetic cores. The coil cross-section diameter gradually expands from the magnetic gap toward the back gap, so that the signal output increases and the heat generation decreases.

The crystal grain size of the magnetic core of this example was 100 to 500, and the hard axis coercive force was less than or equal to 100 e.

As a result of measuring the performance (overwrite characteristics) of the recording head according to the present example, an excellent recording performance of about −50 dB was obtained even in a high frequency region of 40 MHz or more.

According to this embodiment, it is possible to sufficiently record even on a high coercive force medium even in a high frequency region, a media transfer speed of 15 MB Z seconds or more, a recording frequency of 45 MHz or more, and a magnetic disk 40. A high-sensitivity MR sensor with excellent MR effect based on the anisotropic magnetoresistive effect and high-speed transfer of data at 0 rpm or higher, shortening access time, increasing recording capacity, and the like. Thus, a magnetic disk device having an areal recording density of 3 Gb / in ² or more can be obtained.

(Example 3)

FIG. 16 shows the structure of the magnetoresistive head of this embodiment used in place of the MR sensor of the second embodiment. First, a soft magnetic film SAL 16, a separation film 20, and an MR film 13 were sequentially formed. As the MR film 13, a permalloy alloy of 80 at% Ni—Fe was used. Then, a stencil-shaped photoresist was formed on the central active area. Subsequently, the SAL 16, the separation film 20, and the MR film in an area not masked by the resist material are used.

13 was removed by ion milling. At this time, the substrate is rotated while maintaining an appropriate angle with respect to the ion beam, so that the divergent taper

5 formed. Next, a permanent magnet film 17 and an electrode film 8 forming an end passive region were attached. 0 0 as the permanent magnet film 17. . ₈₂ 〇 ₁ "... ₉卩1; ₀ .. ₉ film or Is 〇 0. ₈ . 〇 . ₈ ? 1 :. . ₉ (2 1 "0 ₂ ) ... ₃ films were used. The permanent magnet film 17 in this case was formed by RF sputtering, and the ZrO ₂ chip was placed on the target. yo Ri C o C r was adjusted P t Z r 0 ₂ concentration in the film. the film thickness of the permanent magnet film 1 7 is a bias magnetic field applied to the central active region

(-^ θ. 82 ^ ο ο. Οθ Ι to. 09 ^ 0.800 Γ o. 08 Ι θ .09, ^ <Γ θ2 no 0.03 The coercive force of each permanent magnet film was 60000 e and 1200 Oe.The permanent magnet film and electrode film attached on the stencil were lifted off. The SAL 16 applies a lateral bias magnetic field 4 to the MR film 13, and the permanent magnet film 17 applies a vertical bias magnetic field 6 to the MR film 13. After the MR film 13 is formed into a predetermined shape, the permanent magnet film 17 is laminated thinner than the total thickness of the SAL 16, the separation film 18 and the MR film 13, and the 1 11¾ film 1 The taper is formed so as not to remain at the portion 3 and tapered so as to remain at the end with the MR film 13. Further, the electrode film 8 is formed thereafter, and the tape is formed at the contact portion with the MR film 13. 1 9 is 0 .4 μ ιη thickness of alumina lower gap film, 18 is a lower shield film made of about 2 μπχ NiFe alloy, 14 is an alumina insulating film on the surface of substrate 9. It is formed to a thickness of 0 and polished to smooth the surface of the substrate 9. The substrate 9 is made of a TiC-containing alumina sintered body. The Ta film is used The MR film 13 is made of an 80 at% Ni-Fe alloy with a thickness of 400 persons.

As a result of measuring the electromagnetic conversion characteristics of these heads, the output variation was 20%, and the waveform variation was 10%. ₈₂ C r. .. ₉ Pt. .. Co for a head using 9 membranes. ₈ . C r. .. ₈ Pt. .. ₉ (Z r 0 _2). .. _{With a head} using _three films, the output fluctuation was reduced to within 5% and the waveform fluctuation was reduced to within 5%. Therefore C o. ₈ . C r ₀ .. ₈ Pt. .. It has been confirmed that the use of the ₉ (ZrO ₂ ) o.03 film as the permanent magnet film enhances the effect of suppressing BHN and waveform fluctuation.

The central active region has an MR film, a SAL 16 as a soft bias film for applying a lateral bias, and a separation film 20 for separating the two magnetic films. The end passive region is composed of a permanent magnet film 17 that applies a longitudinal bias to the central active region. The end junction region has two tapers in the central active region.

The permanent magnet film 17 gives a longitudinal bias to the central active region by a leakage magnetic field from the permanent magnet film and a coupling magnetic field at a junction region between the permanent magnet film and the central active region. The permanent magnet film needs to apply a magnetic field to the central active region stably against the magnetic field from the magnetic medium to suppress BHN. For this purpose, the permanent magnet film needs to have a coercive force of 1000 e or more. As the permanent magnet film, a permanent magnet film such as CoPt or CoCrPt is used. A high coercive force can be obtained by using an underlayer such as Cr for the Co-based magnetic film.

As a SAL 16 composed of a soft magnetic film for applying a bias magnetic field to the magnetoresistive film, a soft magnetic film obtained by adding 10% of zirconium oxide to a magnetic alloy composed of 80 atomic% nickel and the balance of iron, A total of 400 people are formed by the sputtering method. Sputtering was performed using a target in which a zirconium oxide chip was placed on a nickel-iron alloy target. The Ar gas pressure during sputtering was 2 mTorr. The substrate temperature was room temperature. Further, an alumina film is formed thereon as an upper gap film at 0.3 μm, and an upper magnetic shield is formed thereon. After forming an insulating film on top of it, an inductive magnetic head for recording is fabricated, but details are omitted. Thereafter, the substrate is cut and processed into a slider to complete the fabrication of the magnetoresistive head. Next, the characteristics of the magnetoresistive head of this embodiment will be described. Evaluation of the magnetoresistive head was performed with the playback output. I got it. For the magnetic head of this example, and for comparison, a head using a nickel-iron alloy having the same structure and 5% niobium added to the bias film was used for comparison. The bias film to which zirconium oxide was added in this example had a saturation magnetic flux density of 0.7 T and a specific resistance of about 120 Ωcm, whereas 5% niobium for comparison was added. The nickel-iron film thus obtained had a saturation magnetic flux density of 0.6 T and a specific resistance of 70 μΩcm. The reproduction output of a magnetoresistive head using a nickel-iron film containing 5% niobium as the bias film was about 40 μμν at a frequency of 10 MHz. The magnetic head of the invention was about 44% at 10% greater. This is because, in a head using a nickel-iron alloy film to which niobium is added as a bias film, the specific current of the bias film is small, so that the detection current flows to both the magnetoresistive film and the bias film, and the resistance read out. This is because the change becomes smaller. In a nickel-iron film to which niobium is added, it is possible to increase the electric resistance by increasing the amount of niobium added.However, when the amount of niobium is increased, the saturation magnetic flux density is significantly reduced. , 5% is the limit. As described above, in the magnetoresistive head of the present embodiment in which the nickel-iron film to which zirconium oxide is added is used as the bias, a high reproduction output can be obtained because the electric resistance of the bias film is large. .

Next, the electric resistance of the bias film of the magnetoresistive head according to the present invention will be described. When zirconium oxide was added to a magnetic alloy film consisting of 80 atomic% nickel and the balance iron, the specific resistance and saturation magnetic flux density of the film were examined. The thickness is 400 people. When aluminum oxide is added, the electrical resistance of the film increases to about 100% at about 10%. On the other hand, the saturation magnetic flux density decreases monotonically with the addition of aluminum oxide, and is about 0.75 T at 10%. This is an example of the case where aluminum oxide is added as a compound. Other compounds show the same tendency, and it is possible to produce a film with high specific resistance by adding the compound. It is difficult to obtain such a film having a high specific resistance by adding a conventional metal element, and it is understood that the addition of a compound is effective.

Next, the characteristics of the bias film containing various compounds will be described. Zirconium oxide, aluminum oxide, hafnium oxide, titanium oxide, beryllium oxide, magnesium oxide, cerium oxide as a rare earth oxygen compound, and a metal magnetic thin film consisting of 80% nickel and the balance iron. Coercivity and anisotropy when zirconium nitride, hafnium nitride, aluminum nitride, titanium nitride, beryllium nitride, magnesium nitride, silicon nitride, and about 5% by weight of cerium nitride as a rare earth nitrogen compound are added. The values of the active magnetic field and the saturation magnetic flux density were examined. The film was prepared by a sputtering method. The film thickness was 400 persons, and the specific resistance of the film was about 70 μQcm. The coercive force is 1.1 to 1.30 e for oxides in the easy magnetization direction, 5 to 1.70 e for nitrides, and 0.25 to 0.40 Oe for the hard magnetization directions. Then, 0.35 to 0.450 e, the anisotropic magnetic field and saturation magnetic flux density were 6.0 to 7.000 e and 0.90 to 0.95 T, respectively.

Next, the characteristics of the bias film obtained by adding 5% by weight of zirconium oxide to iron, iron-cobalt alloy, and nickel-cobalt alloy were examined. The coercive force is 4.00 e for the iron system in the easy direction, 2.0 e for the nickel system, 2.0 to 2.5 e for the former in the difficult direction, and 0.70 e for the latter in the difficult direction. The coercive force of the added film is reduced to about 30 e. ~ 80 e The latter was 15.00 e. In the case of iron-cobalt alloy and nickel-cobalt alloy, the coercive force was reduced when zirconium oxide was added, compared to the case where zirconium oxide was not added, and the soft magnetic properties were improved. It is clear that it will improve. The saturation magnetic flux density is 2.1 to 2.3 T for the former and 0.85 mm for the latter, and the effect of adding zirconium oxide is extremely small. (Example 4)

Next, the material of the permanent magnet film in Example 2 was examined. The permanent magnet film is formed Ri by the RF sputtering method, Z r 0 ₂ or on the target

It was adjusted to T a ₂ 0 ₅ especially good Ri C to place the chip 0 C r P t oxides concentration in the film. Thickness 4 at 0 nm (C oo 82 C roj 9 P to 09..)) - Χ Ζ Χ film

_{(Ζ = Z r 0 2,} T a 2 0 6) result of examining the magnetic properties of coercive force divide be a 1 2 0 00 e or more oxide concentration 3 mol% in the Z r 0 ₂ added film Was. Coercivity 1 2 0 OO e above were obtained in T a ₂ 0 _5. _{_{Z r 0 2, T a 2}} 0 5 additive film oxide concentration coercive force are decreased to be large in Runowa, Amorufu § scan manner by variation crystalline composition of a permanent magnet film plane is disturbed Because it becomes. In these systems, the coercive force was 100 000 e or more when the oxide concentration was 0.5 mol% to 4 mol%. In a study using CoCrPt films of different compositions, the preferred oxide concentration was 0.5 mol%

It was 1 Omol%. The oxides that increase the coercive force include Ti oxide V oxide, Nb oxide, Mo oxide, Hf oxide, W oxide, A1 oxide, Si oxide, and C oxide. r Oxides are possible.

(Example 5)

FIG. 17 is a perspective view of the magnetoresistive head of the present embodiment used in place of the MR sensor of Embodiment 2.

This embodiment has the same structure as that of the first embodiment, except that the laminated structure of the film of the magnetoresistive head is different. An antiferromagnetic film 93 of NiO with a thickness of 50 nm and an MR film 13 with a thickness of 80 at% Ni with a thickness of 1 nm are sequentially formed on the lower gap film 19 made of alumina. — Fe alloy film 9 4 and 1 nm thick Co film The SAL 16 for applying a lateral bias was formed from a nonmagnetic metal film 96 and a 5 nm thick soft magnetic film of a NiFe alloy from Cu with a thickness of 95 nm and a Cu with a thickness of 2 nm.

In this embodiment, the MR film 13 sandwiches a thin non-magnetic film (Cu) between two magnetic films (NiFe), and an antiferromagnetic film (Ni0) in contact with one magnetic film. It is a structure consisting of This structure prevents instability in the manufacturing process and a decrease in sensitivity due to shunting of current. In addition, the antiferromagnetic film uses an oxide Ni0 that does not corrode in the manufacturing process compared to the conventional material FeMn-This enables high reliability in the mass production process. planned. Further, the output of the head is determined by the product of the current flowing through the head and the resistance change amount of the spin valve film, and the antiferromagnetic film itself does not contribute to the resistance change. Therefore, by using the insulating material Ni 0 as the antiferromagnetic film, the input current can be efficiently contributed to the resistance change, and high magnetic field sensitivity can be obtained. As described above, in this embodiment, a recording density of about 5 Gb / in ² can be realized. Further, by forming a film in which an oxide is dispersed in a NiFe alloy on the SAL 1 in the present embodiment as in the first embodiment, a higher reproduction output can be obtained.

(Example 6)

FIG. 18 is a perspective view of a magnetoresistive head of this embodiment used in place of the MR sensor of Embodiment 2.

FIG. 19 is a conceptual diagram showing an example of anisotropy control of the magnetoresistive element of this embodiment. The bias films 30 and 38 made of an antiferromagnetic material apply anisotropy by exchange coupling in the directions of arrows 57 and 58 in the figure. In the figure, the arrow 60 indicates the direction of the magnetic field to be sensed, and the arrow 47 indicates the direction of the unidirectional anisotropy induced in the magnetic film 36. How to easily magnetize the magnetic film 37 sandwiched between the nonmagnetic conductive films 35 The direction is applied by the induction of uniaxial anisotropy in the direction of arrow 62 in the figure. This is achieved by applying a magnetic field in a predetermined direction during the growth of the magnetic film. This embodiment is an example in which the application of anisotropy is realized by a bias film and induced magnetic anisotropy. As a result, the arrows 47 and 48 are both orthogonal to each other in the film plane. By increasing the anisotropy of the magnetic film 36 and decreasing the anisotropy of the magnetic film 37 as compared to the magnitude of the magnetic field to be sensed, the magnetization of the magnetic film 36 is substantially reduced with respect to the external magnetic field. When fixed, only the magnetization of the magnetic film 37 reacts greatly to an external magnetic field. Further, with respect to the magnetic field to be sensed in the direction of arrow 60, the magnetization of the magnetic film 36 becomes an easy-axis excitation state in which the magnetization and the external magnetic field are parallel due to the anisotropy 47. Due to the anisotropy in Fig. 7, the magnetization and the external magnetic field are perpendicular to each other, and the state is a hard axis excitation. This effect makes the above response more remarkable, and the magnetization of the magnetic film 37 with respect to the external magnetic field. The element is driven by the hard axis excitation due to rotation starting from the direction of the arrow 48. This realizes the state, prevents noise accompanying excitation due to domain wall motion, and enables operation at high frequencies.

The film constituting the magnetoresistive element of the present invention was produced by a high-frequency magnetron sputtering apparatus as follows. In an atmosphere of 3 milliliters of argon, the following materials were sequentially laminated on a ceramic substrate and a single-crystal Si substrate with a thickness of 1 millimeter and a diameter of 3 inches. A sputter target was a target of nickel oxide, cobalt, and nickel at 20% iron alloy copper. For the addition of cobalt to nickel-iron, a cobalt chip was placed on a Nigel 20 at% iron alloy target. To add nickel and iron to cobalt, nickel and iron chips were placed on a cobalt target. In the laminated film, high-frequency power is applied to each of the targets on which the target is placed to generate plasma in the device. The shutters arranged for each power source were opened and closed one by one to form each layer sequentially. At the time of film formation, a magnetic field of about 50 Oersteds is applied in parallel to the substrate using two pairs of electromagnets orthogonal to each other in the substrate plane to give uniaxial anisotropy and to establish the exchange coupling bias of the nickel oxide film. The directions were guided in each direction.

Anisotropy was induced by applying a magnetic field in the direction to be induced when forming each magnetic film using two pairs of electromagnets mounted near the substrate. Alternatively, a heat treatment in a magnetic field was performed near the Neel temperature of the antiferromagnetic film after the formation of the multilayer film, and the direction of the antiferromagnetic bias was induced in the direction of the magnetic field.

The performance of the magnetoresistive element was evaluated by patterning the film into a strip shape and forming an electrode. At this time, the direction of the uniaxial anisotropy of the magnetic film was made parallel to the current direction of the element. The electric resistance is measured by applying a constant current between the electrode terminals, applying a magnetic field in the direction perpendicular to the current direction in the plane of the element, and measuring the electric resistance of the element as the voltage between the electrode terminals. The resistance change rate in the present example, which was sensed as the change rate, was 6%.

In FIG. 19, Ni 0 films are used for the bias films 31 and 32, and Ni _{8 is used} for the magnetic films 21 and 22. F e ₂ . This corresponds to the use of an alloy thin film and a Cu film as a nonmagnetic conductive film.

Table 1 shows an example of characteristics of a magnetoresistive element manufactured by changing the structure of the film. Table 1

In Table 1, the characteristics of the element are represented by the resistance change rate and the saturation magnetic field. The reproduction output of the element corresponds to the magnitude of this resistance change rate, and the sensitivity corresponds to the small saturation magnetic field.

As is clear from the results in Table 1, the magnetoresistive elements of the present invention (Nos. 1 to 5) have a resistance change rate of 4% or more and good magnetic properties. 7), the resistance change rate is superior. In particular, Sample Nos. 1, 2, and 4 show good magnetic field sensitivity with a saturation magnetic field of about 10 Oersted and high output with a resistance change rate of 6 to 7%.

It is a magnetoresistive curve of a NiOZCoZCu / Co film using Co as a magnetic film. Hysteresis due to the coercive force of the Co film is observed near the zero magnetic field, but the resistance change rate is nearly twice that of the case of using Ni Fe with the same configuration. 7%.

_{N i O / C o B1 N} i 27 F e 22 / Cu / Ni Fe / C u / Co B i Ni 2 7 F e 22 / N i O magnetoresistive curves of the film, of more than 8% power and zero field High magnetic field sensitivity in the vicinity. As described above, a NiFe or CoNiFeZCu multilayer film having a NiO antiferromagnetic film as a base on a substrate has extremely high sensitivity as a magnetic resistance effect film. Have.

(Example 7)

FIG. 20 is a perspective view of a magnetic resistance effect type magnetic head of the present embodiment used in place of the MR sensor of Embodiment 2. FIG. 20 is a perspective view of the magnetic recording medium as viewed from a surface opposing the magnetic recording medium.

The magnetoresistive head shown in FIG. 20 is composed of a lower shield film 110 on a ceramic substrate 101 such as zirconia and a lower gap formed on the lower shield film 110. At least the magnetoresistive effect on the film 120, the oxide antiferromagnetic film 144 formed on the upper side of the lower gap film 120, and the oxide antiferromagnetic film 144 A predetermined area of the nonmagnetic film 177 disposed in the magnetic sensing part, the nonmagnetic film 177, and the oxide antiferromagnetic film 145 in which the nonmagnetic film 177 is not disposed And a shunt film 15 disposed on the magnetoresistive effect film 140 to enhance the magnetic response characteristics of the magnetoresistive effect film 140. 0, a soft film 155, a signal detection electrode 160 formed on the soft film 155, an upper gap film 170 formed to cover each film, and Gear It is formed with an upper shield film 1 8 0 formed above the membrane 1 7 0. Note that the lower shield # 110 also serves as a signal detection electrode.

As shown in the magnetic domain control layer of FIG. 21, the oxide antiferromagnetic film 144 is in direct contact with the magnetoresistive film 140 at both ends of the magnetoresistive film 140. Therefore, the magnetoresistive film 140 and the oxide antiferromagnetic film 144 form ferromagnetic-antiferromagnetic magnetic exchange coupling in this region. When this magnetic exchange coupling is formed during the process of heating the oxide antiferromagnetic film 15 above the blocking temperature and cooling it below the blocking temperature while applying an external magnetic field in one direction The magnetic moment in the oxide antiferromagnetic film 144 is fixed in the direction of arrow 451, and the magnetic moment in the magnetoresistive film 140 is directed in the direction of arrow 401. . In general, since the magnetic anisotropy of an antiferromagnetic material is extremely strong, once the direction of the magnetic moment in the antiferromagnetic film is fixed, an external magnetic field of about several tens Oe may cause a problem. However, the magnetization inside the antiferromagnetic film does not change. Therefore, the magnetic moment in the magnetoresistive film 140, which forms magnetic exchange coupling with the oxide antiferromagnetic film 144, is strongly fixed in the direction indicated by the arrow 401. And At both ends of the magnetoresistive film 140, when the direction of the magnetic moment is directed in the direction of arrow 401, the magnetoresistive film is not directly in contact with the oxide antiferromagnetic film 144. The magnetic moment of the magnetic sensing part 140 is also forcibly directed in the direction indicated by the arrow 402. This makes it possible to forcibly maintain the magneto-sensitive portion of the magneto-resistance effect film 140 in a single magnetic domain state.

According to the present invention, a non-magnetic film 177 is disposed at least in the magneto-sensitive portion of the magneto-resistance effect film 140 and between the magneto-resistance effect film 140 and the oxide antiferromagnetic film 144. are doing. When the nonmagnetic film 177 is not provided, the magnetoresistive film 140 and the oxide antiferromagnetic film 145 form magnetic exchange coupling even in the magneto-sensitive portion. In this case, the magnetic moment in the magnetoresistive film 140 is such that the magnetic exchange coupling is so strong that it cannot rotate freely in response to a magnetic signal from the magnetic recording medium. Make the playback sensitivity of the magnetic head significantly lower. On the other hand, between the magnetoresistance effect film 140 and the oxide antiferromagnetic film 144 In the present invention in which the nonmagnetic film 177 is interposed, in this region, it is possible to prevent the formation of direct magnetic exchange coupling between the magnetoresistance effect film 140 and the oxide antiferromagnetic film 145. it can. Therefore, the rotation of the magnetic moment in the magnetoresistive effect film 140 of the magnetic sensing portion is relatively free, and a magnetic resistance effect type magnetic head with improved magnetic response characteristics can be obtained. In addition, at the both ends of the magnetoresistive film 140, the magnetosensitive portion of the magnetoresistive film 140 is brought into a single magnetic domain state by the oxide antiferromagnetic film 144. Since a moderate longitudinal bias magnetic field to be maintained is applied, Barkhausen noise can be suppressed.

N N0 is selected as the oxide antiferromagnetic film 1 45, a typical NiFe alloy film is selected as the magnetoresistive film 140, and the Ni0 film and the NiFe alloy are selected. The membrane was examined for magnetic exchange coupling. The film thickness of NiO is 100, and the film thickness of NiFe alloy is 400. When the magnetic exchange coupling is formed, the magnetization curve is shifted in one direction. The shift amount at the origin of the magnetization curve is the magnitude of the coupling magnetic field, that is, the magnitude of the longitudinal bias magnetic field. The magnitude of the coupling magnetic field is about 20 Oe. Also, with the formation of magnetic exchange coupling, the anisotropic magnetic field increases by an amount corresponding to the coupling magnetic field. Here, the anisotropic magnetic field is a magnetic field required for the magnetization curve to be saturated, and indicates the ease of rotation of the magnetic moment. The magnitude of the anisotropic magnetic field is about 250 e. The magnitude of the anisotropic magnetic field is too large to increase the reproduction sensitivity. In the present invention, in order to reduce this anisotropic magnetic field that is too large, the non-magnetic film 177 is interposed in the magnetic sensing portion. In this configuration, the vertical bias magnetic field applied to the magnetoresistive film 140 is reduced to several e, and the magnitude of the anisotropic magnetic field sufficient to sufficiently enhance the magnetic response characteristics is obtained. And Barkhausen noise did not occur.

Next, when the film thickness of Ni 0 is changed, the magnitude of the coupling magnetic field with the Ni Fe alloy film is increased. I checked the size. It can be seen that the coupling magnetic field is constant when the NiO film thickness is 50 OA or more, and deteriorates when it is less than 50 OA. In addition, the dependence of the blocking temperature on the Ni film thickness was also investigated. The blocking temperature became constant when the Ni film thickness was 500 or more, was about 200 ° C, and deteriorated below that. When the thickness of the NiO film is small, the magnetic characteristics deteriorate because the Nio film cannot form a tight crystal structure when the Nio film is thin, and the Nio film It is presumed that the antiferromagnetic state was not established. Therefore, in order to form magnetic exchange coupling between the NiFe alloy film and the Ni0 film with good stability, it is preferable that the Ni0 film has a thickness of 500 or more.

Magnetic exchange coupling is a physical phenomenon near the interface between a ferromagnetic film and an antiferromagnetic film. Therefore, in order to prevent the formation of magnetic exchange coupling in the magnetically sensitive portion, at least one nonmagnetic film may be interposed between the ferromagnetic film and the antiferromagnetic film _(the nonmagnetic film is continuous In the case of a film, it is possible to directly prevent magnetic exchange coupling even with a thickness of one atomic layer In the present invention, the nonmagnetic film 177 is formed by a sputtering method. In our experiments, in order to make the non-magnetic film 177 completely continuous, the non-magnetic film 177 should have a very thin film thickness of about 100 people. Thus, in the present invention, the non-magnetic film 177 is interposed at least in the magneto-sensitive portion of the magneto-resistance effect film 140 on the oxide anti-ferromagnetic film 144, and the magneto-resistance effect is provided above the non-magnetic film 177. When the film 140 is formed, the thickness of the non-magnetic film 177 is extremely small, so that no step break occurs in the magneto-resistance effect film 140. Therefore, the magneto-resistance effect is obtained. It is possible to apply a moderately large longitudinal bias magnetic field with good stability and improved magnetic response characteristics to the magnetic sensing part of the film 140, and a plurality of magnetoresistive heads can be applied. Variations in characteristics were suppressed.

The non-magnetic film 177 may be a single metal film, an alloy film, or an oxide film. It may be formed or may be crystalline or amorphous, but an alloy film is most desirable.

The magneto-resistance effect type magnetic head of the present embodiment has a shield for applying a lateral bias magnetic field to the magneto-resistance effect film 140 for improving the magnetic response characteristics, on the upper side of the magneto-resistance effect film 140. A film 150 and a soft film 150 are formed, and a signal detection electrode 160 is formed above the film. Here, the shunt film 150 is a conductive film, and when a current flows through the shunt film 150, the periphery of the shunt film 150 is determined by the right-hand screw rule. A magnetic field is generated in the direction As a result, the magnetic moment in the magnetoresistive film 140 rotates. I to Li, the magnetoresistive film 1 4 0 transverse bias field was or _t becomes and this applied, the soft film 1 5 5 is a soft magnetic film. When a current flows through the magnetoresistive film 140, a magnetic field is generated around the magnetoresistive film 140 in a direction determined by the right-handed screw rule, and when the magnetic moment in the soft film 150 rotates, The magnetic moment in the magnetoresistive film 140 rotates to stabilize the magnetostatic energy. As a result, a lateral bias magnetic field is applied to the magnetoresistive film 140. In order to apply a lateral bias magnetic field, either of the shunt film 150 and the soft film 150 may be used. However, the shunt film 150 and the soft film 150 may be used. When 5 is used in the above configuration, the rotation directions of the magnetic moments are the same, so they may be used simultaneously.

Now, in the present invention, the non-magnetic film 177 is interposed in the lower magneto-sensitive portion of the magneto-resistance effect film 140. When the nonmagnetic film 177 is formed of a conductive film, this film exerts the same effect as the shunt film 150 on the magnetoresistive film 140. In this case, a transverse bias magnetic field in the opposite direction to the transverse bias magnetic field provided by the shunt film 150 and the soft film 150 is applied to the magnetoresistive effect film 140. The magnetic response of the magnetoresistive head The response characteristics will be degraded. To prevent this deterioration, it is better to reduce the thickness of the nonmagnetic film and increase the specific resistance. In the present invention, in order to prevent this deterioration, the nonmagnetic film is made of an alloy film having a large specific resistance.

Next, the material of the nonmagnetic film 177 will be described. As described above, the nonmagnetic film is more preferably a metal film than an oxide film. The metal film is made of a material selected from the following. That is, Al, Ti, Cr, Cu, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Ag, In, Sn, Ta, W, R It may be composed of a metal film selected from any of e, 0 s, Ir, Pt, and Au. Two or more metal films may be combined to form an alloy film. In this case, the specific resistance of the nonmagnetic film 177 can be increased.

In addition, one or more of the above elements except for Cr is used as a main component, and a small amount of Cr is added thereto to form the nonmagnetic film 177. The corrosion resistance and corrosion resistance of the magnetic film 177 can be dramatically improved.

Further, Cu, Rh, Pd, Ag, IrPt, Au, etc. having a crystal structure of F.CC, or these elements as main components, The magnetic characteristics of the magnetoresistive effect film 140 can be improved by forming the nonmagnetic film 177 with a metal film or an alloy film formed by adding at least one kind of at least one of them. The magnetoresistive film 140 is usually composed of a NiFe alloy film, a NiCo alloy film, and the like, and these films have an F.CC crystal structure. Therefore, when the nonmagnetic film 177 has the crystal structure of FCC, the magnetoresistance effect film 140 can be epitaxially grown on the nonmagnetic film 177. This is because the magnetic properties of the magnetoresistive effect film 140 are improved when the magnetoresistive effect film 140 is epitaxially grown. Next, a method of manufacturing a magnetoresistive effect type magnetic head according to the present invention will be described. . First, the noise from the recording medium is placed above the non-magnetic substrate 1. The lower shield film 110 provided for absorbing unnecessary signals is formed by a technique such as a sputtering method. Next, an insulating film such as alumina is formed on the lower shield film 110 by the same method as the lower gap film 120. Next, an oxide antiferromagnetic film 144 is formed on the lower gap film 120 by a similar method. Then, the lower shield film 110, the lower gap film 120, and the oxide antiferromagnetic film 144 are processed into a predetermined shape. Here, the end of the lower magnetic shield film 110 is processed so as to be inclined with respect to the substrate surface. This is to prevent disconnection at the end of the lower magnetic shield layer 110. Next, a resist frame is formed on the oxide antiferromagnetic film 144 so that the nonmagnetic film 177 is arranged at least in the magneto-sensitive portion of the magnetoresistive effect film 140. . Then, a non-magnetic film 177 is formed thereon by a method such as a sputtering method. After the formation of the non-magnetic film 177, the resist frame is removed using an organic solvent or the like, and the non-magnetic film 177 is arranged at a predetermined position of the magneto-sensitive portion of the magneto-resistance effect film 140. . The magnetoresistive film 140 is also placed at a predetermined position above the nonmagnetic film 177 and at a predetermined position of the oxide antiferromagnetic film 145 where the nonmagnetic film 177 is not disposed. A shunt film 150 and a soft film 155 are formed by a similar method above the magnetoresistive effect film 140, and these films are formed by the same method. After processing into a predetermined shape using a technique such as photolithography, a signal detection electrode 160 is formed above the soft film 155, and after processing into a predetermined shape, an upper gap is formed. The film 170 and the upper shield film 180 are formed and processed to complete the manufacture of the magnetoresistive head.

After forming the oxide antiferromagnetic film 144, the oxide antiferromagnetic film 144 was processed and arranged in the same shape as the lower gap film 120. The same shape as the magnetoresistive effect 1400 when machining the magnetoresistive effect film 1400 May be processed.

The magnetoresistive head has an inductive thin-film magnetic head as the recording head above it, and forms a separate read / write thin-film magnetic head.For example, an external magnetic head for a large computer It is used by mounting it on a storage device. For this reason, although the Barkhausen noise can be reduced, the reproduction sensitivity is lowered and the SZN ratio is lowered. However, in the present invention, the magnetoresistance effect film 140 is provided to the extent that Barkhausen noise can be reduced. In order to minimize the longitudinal bias magnetic field, N is made small and S is made as large as possible. For this reason, a large SZN ratio can be secured in the magnetoresistive head of the present invention, and as a result, a large capacity having an areal recording density of 200 Mb / in ² or more, which could not be realized conventionally, can be obtained. It becomes possible to manufacture magnetic disk devices.

As described above, in the magnetoresistive head according to the present invention, the oxide antiferromagnetic film 144 is used as the material for controlling the magnetic domain, and the magnetoresistance effect film 140 and the oxide antiferromagnetic film are used. A non-magnetic film 177 is interposed in the magnetic sensing part between the films 145 and 145. As a result, it is possible to provide a magnetoresistive head capable of applying an optimum longitudinal bias magnetic field with sufficiently enhanced magnetic response characteristics to the magnetic sensing portion within a range where Barkhausen noise can be reduced. .

In addition, a very thin non-magnetic film 177 is formed on the oxide antiferromagnetic film 145 at least on the magneto-sensitive portion, and a magnetoresistive film 140 is formed thereon. Accordingly, the magnetoresistive film 140 has no advantage that the step is not generated. There is also an advantage that the magnetic domain control layer and the magnetoresistive film 140 can be formed with good stability. In this case, it is possible to further minimize variations in performance among a plurality of magnetic heads caused by variations in performance of the magnetic domain control layer.

Further, the magnetoresistive head of the present invention is mounted on a magnetic disk drive. By mounting, a high SZN ratio can be secured. For this reason, a large-capacity magnetic disk device becomes possible. Industrial applicability

According to the thin-film magnetic head of the present invention, the thickness of the resist for exposing the frame defining the track portion can be reduced, so that the frame can be formed with high precision and the shape of the frame can be improved. Because of its good verticality, it has a track portion with a high-precision and vertical shape, and can be read and read. In addition, it can be used as a recording head, and a recording / reproducing separation type head in which a magnetoresistive head is integrated with the reproducing head can be used, and a surface of 1 gigabit Z in ² or more can be used. A large-capacity magnetic disk device having a recording density can be obtained.

Claims

The scope of the claims

1. a lower magnetic core, the lower magnetic core being stacked on the lower magnetic core, having one end connected to one end of the lower magnetic core, and the other end facing the other end of the lower magnetic core via a magnetic gap; An upper magnetic core that forms a magnetic circuit with the lower magnetic core, a conductor coil provided between the lower magnetic core and the upper magnetic core, and an insulator that electrically insulates the lower magnetic core, the upper magnetic core, and the conductor coil from each other. A top end of the upper magnetic core having a square shape, a track width of 1.5 m or less, and a thickness of the upper magnetic core being smaller than the track width. A thin-film magnetic head characterized by its large size.

2. a lower magnetic core, and a lower end laminated on the lower magnetic core, one end of which is connected to one end of the lower magnetic core, the other end of which faces the other end of the lower magnetic core via a magnetic gap; An upper magnetic core that forms a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and an electrical connection between the lower magnetic core, the upper magnetic core, and the conductor coil. In a thin-film magnetic head having an insulating film to be insulated, the tip of the upper magnetic core has a ratio (w 2 ww 1) of a track width (wl) to an upper width (w 2) of 1. 3 or less, and the track width is 1.5 μm or less, and the thickness of the upper magnetic core is larger than the track width.

3. a lower magnetic core, wherein the lower magnetic core is stacked on the lower magnetic core, one end of which is connected to one end of the lower magnetic core, and the other end of which faces the other end of the lower magnetic core via a magnetic gap; An upper magnetic core that forms a magnetic circuit together with the first magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and an electrical connection between the lower magnetic core, the upper magnetic core, and the conductor coil. A thin-film magnetic head comprising an insulating film to be insulated, wherein the upper magnetic core has substantially the same thickness as a whole and has a track width of 1.5 μm or less. Thin-film magnetic head.

4. a lower magnetic core, the lower magnetic core being stacked on the lower magnetic core, having one end connected to one end of the lower magnetic core, and the other end facing the other end of the lower magnetic core via a magnetic gap; An upper magnetic core that forms a magnetic circuit with the lower magnetic core, a conductor coil provided between the lower magnetic core and the upper magnetic core, and an insulator that electrically insulates the lower magnetic core, the upper magnetic core, and the conductor coil from each other. A top end of the upper magnetic core has a thickness larger than a track width, and the whole magnetic core has substantially the same thickness, and the track width is equal to one. A thin-film magnetic head characterized by being less than 5 tm.

5. The thin-film magnetic head according to claim 1, wherein the thickness of the upper magnetic core is 1.5 to 5 times the track width.

6. In the recording / reproducing separation type head in which the inductive recording head and the magnetoresistive effect reproducing head are formed on the body, the track width of the recording head and the reproducing head are both different. The recording / reproducing separation type head is also characterized by having a diameter of 1.5 βm or less.

7. The separated recording / reproducing head according to claim 6, wherein a track width of the recording head is slightly larger than a track width of the reproducing head in a submicron order.

8. In a separate read / write head in which an inductive write head and a magnetoresistive read head are integrally formed,

The recording head is disposed on the lower magnetic core, and the other end of the recording head is stacked on the lower magnetic core and has one end connected to one end of the lower magnetic core, and the other end faces the other end of the lower magnetic core via a magnetic gap. Forming a magnetic circuit with the lower magnetic core An upper magnetic core, a conductive coil provided between the lower magnetic core and the upper magnetic core, and an insulating film for electrically insulating the lower magnetic core, the upper magnetic core, and the conductive coil from each other. And the thickness of the upper magnetic core is larger than the track width,

The reproducing head includes first and second ferromagnetic layers separated by a non-magnetic metal layer and an antiferromagnetic layer provided in contact with one of the magnetic layers. A recording / reproducing separation type head wherein the magnetization direction of the first magnetic layer of the ferromagnetic material is orthogonal to the magnetization direction of the second layer when the magnetic field applied from the recording medium is zero. De.

9. In a separate read / write head in which an inductive write head and a magnetoresistive read head are integrally formed,

The recording head has a lower magnetic core, and is stacked on the lower magnetic core, one end is connected to one end of the lower magnetic core, and the other end is connected to the other end of the lower magnetic core via a magnetic gap. An upper magnetic core facing the lower magnetic core to form a magnetic circuit with the lower magnetic core; a conductive coil provided between the lower magnetic core and the upper magnetic core; and a lower magnetic core, an upper magnetic core, and a conductive coil. An insulating film electrically insulating each other, and wherein a thickness of the upper magnetic core is larger than a track width;

The reproducing head has a thin film in which a soft magnetic layer, a non-magnetic layer, a ferromagnetic layer and an antiferromagnetic layer are sequentially formed, and the thin film rotates in accordance with an external magnetic field to rotate the soft magnetic layer. The relative angle with respect to the magnetization of the ferromagnetic layer is changed to have a magnetoresistive effect, and the ferromagnetic layers mutually interpose a non-magnetic layer to form a first ferromagnetic layer, a second ferromagnetic layer, and a third ferromagnetic layer. Having a laminate of magnetic layers,

A recording / reproducing separation type head characterized by the following.

10. The inductive recording head and the magnetoresistive head are integrally formed. With a separate recording and playback head,

The recording head has a lower magnetic core, and is stacked on the lower magnetic core. One end is connected to one end of the lower magnetic core, and the other end is connected to the other end of the lower magnetic core via a magnetic gap. An upper magnetic core facing the lower magnetic core to form a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; a lower magnetic core, an upper magnetic core, and a conductor coil An insulating film electrically insulating the upper magnetic core from each other, and a thickness of the upper magnetic core is larger than a track width;

The read head comprises: a magnetoresistive film for converting a magnetic signal into an electric signal using a magnetoresistive effect; a pair of electrodes for flowing a signal detection current through the magnetoresistive film; An oxide antiferromagnetic film disposed below the effect film; and a nonmagnetic film in at least a magnetically sensitive portion of the magnetoresistive effect film between the magnetoresistive effect film and the oxide antiferromagnetic film. A recording / reproducing separated type magnetic head having at least one layer.

11. A magnetic disk for recording information, an inductive recording head for writing the information on the magnetic disk, and a magnetoresistive head for reproducing the information written on the magnetic disk are sliders. A head / disc assembly comprising: a recording / reproducing separation type head integrally formed with a head; and a drive unit for rotating the disk, wherein the recording head is any one of claims 1 to 5. A head 'disk' assembly comprising a thin-film magnetic head according to claim 1.

12. A slider is provided with a magnetic disk for recording information, an inductive recording head for writing the information on the magnetic disk, and a magnetoresistive head for reproducing the information written on the magnetic disk. A recording / playback separation type head integrally formed, and drive means for rotating the disk A magnetic disk device having a plurality of head disk assemblies, wherein the recording head comprises the thin-film magnetic head according to any one of claims 1 to 5. Disk device.

13. A magnetic disk for recording information, an inductive recording head for writing the information on the magnetic disk, and a magnetoresistive head for reproducing the information written on the magnetic disk In a magnetic disk device having a plurality of head disk assemblies each including a recording / reproducing separation type head integrally formed with a slider and driving means for rotating the disk, A magnetic disk device, characterized in that the recording / reproducing separation type head comprises the recording / reproducing separation type head according to any one of claims 6 to 10.

14. A magnetic disk for recording information, an inductive recording head for writing the information on the magnetic disk, and a magnetoresistive head for reproducing the information written on the magnetic disk Wherein the recording / reproducing separation type head is formed integrally with a slider, and a drive means for rotating the disk is provided. A head disk assembly comprising a recording head according to any one of Items 6 to 10.

15. Lower magnetic core, laminated on the lower magnetic core, one end is connected to one end of the lower magnetic core, and the other end is opposed to the other end of the lower magnetic core via a magnetic gap. An upper magnetic core that forms a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and an electric motor that electrically connects the lower magnetic core, the upper magnetic core, and the conductor coil to each other. In the method of manufacturing a thin-film magnetic head having an insulating film that is electrically insulated, the upper magnetic core has substantially the same thickness as a whole and has a track width of 1.5 μπι or less. The lower magnetic core, the magnetic gap, the conductor coil and the magnetic core. After forming a frame on a substrate having an edge film, a plating film to be the upper magnetic core is formed, and then the plating film is etched by using a mask in a region surrounded by the frame, A method for manufacturing a thin-film magnetic head, comprising forming the upper magnetic core.

16. Lower magnetic core, one end of the lower magnetic core laminated on the lower magnetic core, one end being connected to one end of the lower magnetic core, and the other end facing the other end of the lower magnetic core via a magnetic gap. An upper magnetic core that forms a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and a lower magnetic core, an upper magnetic core, and a conductor coil. An insulating film for electrically insulating the lower magnetic core, the upper magnetic core having substantially the same thickness as a whole, and having a track width of 1.5 m or less. After forming a frame on a substrate having a gap, a conductor coil, and an insulating film, a plating film to be the upper magnetic core is formed, and then, a mask is formed in a region surrounded by the frame. Etch the plating film and remove the upper magnetic A method for manufacturing a thin-film magnetic head forming a core, comprising:

On the substrate, a multilayer film having two or more layers having a resist layer as an uppermost layer has a desired thickness in a leading end region of the substrate where a magnetic gap of a thin-film magnetic head is formed. After forming the uppermost layer resist of the multilayer film into a shape corresponding to at least the tip end region of the upper magnetic core, the patterned resist is used as a mask to form a resist layer or lower. A first step of etching a lower layer portion to form a first frame corresponding to the tip region of the upper magnetic core;

On the substrate on which the first frame is formed, a resist is formed in a rear region of the substrate on which the conductor coil and the insulating film of the conductor coil are formed so that the frame has a desired thickness. Then apply the resist Forming a second frame corresponding to a portion formed in the rear region of the upper magnetic core so as to be integral with the first frame. A method for manufacturing thin-film magnetic heads.

17. Lower magnetic core, laminated on the lower magnetic core, with one end connected to one end of the lower magnetic core and the other end facing the other end of the lower magnetic core via a magnetic gap. An upper magnetic core that forms a magnetic circuit with the lower magnetic core; a conductor coil provided between the lower magnetic core and the upper magnetic core; and an electric motor that electrically connects the lower magnetic core, the upper magnetic core, and the conductor coil to each other. A thin-film magnetic head comprising: an insulating film for electrically insulating the upper magnetic core, the upper magnetic core as a whole having substantially the same thickness, a track width of 1.5 or less, and After forming a frame on a substrate having a magnetic core, a magnetic gap, a conductor coil and an insulating film, a plating film to be the upper magnetic core is formed, and then a mask is formed in a region surrounded by the frame. To remove the plating film. A method of manufacturing a thin-film magnetic head for forming the upper magnetic core, comprising:

After forming an organic pattern in the rear region of the substrate on which the conductor coil and the insulating film of the conductor coil are formed,

A multilayer film having two or more layers having a resist layer as an uppermost layer is formed so as to have a desired thickness in a front end region of the substrate where a thin-film magnetic head magnetic gap is formed, After patterning the uppermost layer resist of the multilayer film into a shape corresponding to the frame, the organic material pattern in the lower layer portion below the resist layer and the rear region is etched using the patterned resist as a mask. A method for manufacturing a thin-film magnetic head, comprising forming the frame.