WO1998036446A3 - A method for fabricating a small area of contact between electrodes - Google Patents

A method for fabricating a small area of contact between electrodes Download PDF

Info

Publication number
WO1998036446A3
WO1998036446A3 PCT/US1997/017711 US9717711W WO9836446A3 WO 1998036446 A3 WO1998036446 A3 WO 1998036446A3 US 9717711 W US9717711 W US 9717711W WO 9836446 A3 WO9836446 A3 WO 9836446A3
Authority
WO
WIPO (PCT)
Prior art keywords
fabricating
electrodes
contact
small area
electrode
Prior art date
Application number
PCT/US1997/017711
Other languages
French (fr)
Other versions
WO1998036446A2 (en
WO1998036446A9 (en
Inventor
Brent Gilgen
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to EP97955058A priority Critical patent/EP0946975B1/en
Priority to DE69721306T priority patent/DE69721306T2/en
Priority to JP53133898A priority patent/JP4747231B2/en
Priority to AU80525/98A priority patent/AU8052598A/en
Priority to AT97955058T priority patent/ATE238605T1/en
Publication of WO1998036446A2 publication Critical patent/WO1998036446A2/en
Publication of WO1998036446A3 publication Critical patent/WO1998036446A3/en
Publication of WO1998036446A9 publication Critical patent/WO1998036446A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H10N70/066—Patterning of the switching material by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8418—Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50—Resistive cell structure aspects
    • G11C2213/52—Structure characterized by the electrode material, shape, etc.

Abstract

An electrode structure for use in a chalcogenide memory is disclosed. The electrode has a substantially frusto-conical shape, and is preferably formed by undercut etching a polysilicon layer beneath an oxide pattern. With this structure, improved current densities through the chalcogenide material can be achieved.
PCT/US1997/017711 1996-10-02 1997-10-02 A method for fabricating a small area of contact between electrodes WO1998036446A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP97955058A EP0946975B1 (en) 1996-10-02 1997-10-02 A device and method for fabricating a small area of contact between electrodes
DE69721306T DE69721306T2 (en) 1996-10-02 1997-10-02 DEVICE AND METHOD FOR PRODUCING A SMALL AREA CONTACT BETWEEN ELECTRODES, AND DEVICE THEREFOR
JP53133898A JP4747231B2 (en) 1996-10-02 1997-10-02 Method for manufacturing a small area contact between electrodes
AU80525/98A AU8052598A (en) 1996-10-02 1997-10-02 A method for fabricating a small area of contact between electrodes
AT97955058T ATE238605T1 (en) 1996-10-02 1997-10-02 DEVICE AND METHOD FOR PRODUCING A SMALL-AREA CONTACT BETWEEN ELECTRODES AND DEVICE THEREFOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/724,816 US6147395A (en) 1996-10-02 1996-10-02 Method for fabricating a small area of contact between electrodes
US08/724,816 1996-10-02

Publications (3)

Publication Number Publication Date
WO1998036446A2 WO1998036446A2 (en) 1998-08-20
WO1998036446A3 true WO1998036446A3 (en) 1998-10-22
WO1998036446A9 WO1998036446A9 (en) 1999-02-04

Family

ID=24912031

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1997/017711 WO1998036446A2 (en) 1996-10-02 1997-10-02 A method for fabricating a small area of contact between electrodes

Country Status (8)

Country Link
US (12) US6147395A (en)
EP (3) EP0946975B1 (en)
JP (1) JP4747231B2 (en)
KR (1) KR100466675B1 (en)
AT (3) ATE450891T1 (en)
AU (1) AU8052598A (en)
DE (3) DE69721306T2 (en)
WO (1) WO1998036446A2 (en)

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* Cited by examiner, † Cited by third party
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