WO1998056050A1 - Electrode edge wave patterns for piezoelectric resonator - Google Patents
Electrode edge wave patterns for piezoelectric resonator Download PDFInfo
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- WO1998056050A1 WO1998056050A1 PCT/US1998/007108 US9807108W WO9856050A1 WO 1998056050 A1 WO1998056050 A1 WO 1998056050A1 US 9807108 W US9807108 W US 9807108W WO 9856050 A1 WO9856050 A1 WO 9856050A1
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- 230000000737 periodic effect Effects 0.000 claims abstract description 52
- 239000010453 quartz Substances 0.000 claims abstract description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 230000001066 destructive effect Effects 0.000 claims description 10
- 230000004044 response Effects 0.000 abstract description 18
- 239000013078 crystal Substances 0.000 abstract description 17
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 16
- 238000004891 communication Methods 0.000 description 9
- 238000012360 testing method Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 230000001174 ascending effect Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000001902 propagating effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000002452 interceptive effect Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
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- 230000001788 irregular Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
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- 230000008569 process Effects 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/132—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials characterized by a particular shape
Definitions
- the present invention relates generally to piezoelectric devices and, in particular, to electrode patterns on piezoelectric resonators for providing signals with improved temperature performance.
- Piezoelectric crystals have been used for many decades as frequency control elements in radio communication devices because of their stable resonant frequency signal generation during operation.
- the resonant frequency of a particular piezoelectric crystal is dependent on its vibrational mode of operation, its thickness, the density, and the elastic coefficients of material. Each of these parameters vary with changes in temperature. Therefore, the resonant frequency of the piezoelectric crystal changes with temperature.
- undesired vibrational modes arise in piezoelectric crystals, such as AT-cut quartz for example, that disturb the frequency-temperature and/or resistance- temperature performance of the crystal.
- These undesired vibrational modes cause disturbances, or "activity dips", in the frequency-temperature and/or resistance-temperature curves of the crystal. This results in a sudden and undesirable shift in frequency and/or resistance as the crystal changes temperature.
- This problem occurs in about 2-7% of AT-cut quartz crystals and causes serious difficulties for temperature compensation schemes and circuitry required to normalize the temperature variation of the quartz crystal, such as in a temperature compensated crystal oscillator (TCXO) application, for example.
- TCXO temperature compensated crystal oscillator
- undesirable vibrational modes are face- shear and flexure modes that have frequencies near that of the desired thickness-shear vibrational mode. These undesirable modes exhibit their own frequency-temperature and/or resistance-temperature curves which are typically much steeper than the Bechmann curve. Where these curves intersect the Bechmann curve, vibrational coupling occurs which disturbs the Bechmann response. These disturbances, or activity dips, distort the frequency-temperature and/or resistance-temperature curves such that typical temperature compensation schemes can no longer compensate the higher- order perturbations caused by the activity dips.
- FIG. 1 shows a top plan view of a prior art piezoelectric resonator
- FIG. 2 shows a graphical representation of an activity dip in a response of the piezoelectric resonator of FIG. 1 ;
- FIG. 3 shows a top plan view of a first embodiment of a piezoelectric resonator, in accordance with the present invention
- FIG. 4 shows a top plan view of a second preferred embodiment of a piezoelectric resonator, in accordance with the present invention
- FIG. 5 shows a top plan view of a third embodiment of a piezoelectric resonator, in accordance with the present invention.
- FIG. 6 shows a communication device incorporating a piezoelectric resonator, in accordance with the present invention.
- the present invention provides a specific electrode design, for a piezoelectric resonator, which destructively interferes with undesirable vibrational modes having frequencies that are close to a desired operating frequency.
- the electrodes, as disposed on a piezoelectric plate, have an edge wave patterns which are of a periodicity that does not support undesired vibrational modes.
- FIG. 1 shows a top view of a prior art piezoelectric resonator 10 which includes a piezoelectric substrate 12 with a disposed rectangular electrode 14.
- the resonator 10 is a AT-cut strip quartz blank with dimensions of about 188 mils (4.8 mm) in length by about 95 mils (2.4 mm) in width by about 5 mils (0.13 mm) thick, and the electrode 14 has dimensions of about 95 mils (2.4 mm) in length by about 65 mils (1.65 mm) in width.
- a bottom electrode (not shown) is of the same dimensions as the disposed electrode 14 and is overlapped by the disposed electrode 14.
- the electrodes are used to drive a thickness- shear mode of vibration at a desired frequency.
- the frequency exhibits a substantially third-order frequency-temperature response commonly known as a Bechmann curve.
- a fundamental thickness-shear frequency of the resonator is about 13.0 MHz.
- undesirable vibration modes such as, but not limited to, face-shear modes and flexure modes also exist near 13.0 MHz, for example. These are the modes that are of concern since only nearby frequency modes will adversely affect the thickness-shear mode over temperature.
- resonators used in radio communication devices require some type of temperature compensation to maintain frequency stability to within ⁇ 5 ppm or less over a predetermined range of temperatures, typically -30°C to 85°C or more.
- the resonators are required to maintain a stable resistance due to the minimum current drain requirements of radios. If the resistance of a resonator rises above a certain level, the radio may stop working.
- FIG. 2 shows a graph of a frequency-temperature (Bechmann) curve 16, a resistance-temperature curve 17, and a delta deviation curve 19 of a prior art AT-cut quartz resonator that has been disturbed by an activity dip 18.
- the delta deviation curve 19 describes the deviation of the frequency-temperature curve from an ideal third-order Bechmann response. This parameter is important for those customer applications that have a temperature compensation algorithm limited to third-order terms.
- the activity dip 18 causes a spike in the resistance-temperature curve 17 such that the resistance of the resonator increases from 33 ohms at 27°C to a high of about 49 ohms at 89°C.
- the resistance of the resonator increases from 33 ohms at 27°C to a high of about 49 ohms at 89°C.
- the activity dip 18 can disturb the frequency- temperature performance of the resonator from an ideal Bechmann response, as demonstrated by the delta deviation curve 19 which shows a deviation from the ideal Bechmann response by about ⁇ 0.9 ppm near 85°C.
- the delta deviation curve 19 shows a deviation from the ideal Bechmann response by about ⁇ 0.9 ppm near 85°C.
- the desired mode of vibration in a piezoelectric blank is a thickness- shear vibration.
- This can be visualized as a wave extending in a thickness direction of the blank with the two major surfaces of the plate moving perpendicular to the thickness of the plate. One of the major surfaces moves in an opposite perpendicular direction from the other major surface of the plate.
- the face shear mode can be visualized as a wave in the width-length plane of the blank propagating along a length direction of the blank.
- the flexure mode can be visualized as a wave in the thickness- width plane of the blank propagating along a width direction of the blank.
- the flexure mode also has a vibrational component in the length direction of the blank.
- the present invention provides dampening of the face-shear and flexure modes.
- FIG. 3 shows a first embodiment of the present invention including a piezoelectric resonator 20 having a piezoelectric plate 22 having an upper surface 24 and a lower surface.
- the plate 22 is the same as is used in the prior art resonator of FIG. 1.
- an upper electrode 26 is disposed on the upper surface 24 of the plate 22 and a lower electrode (not shown) is disposed on the lower surface of the plate.
- the upper electrode 26 and lower electrode are situated centrally on the plate, opposite from each other and substantially aligned.
- the electrodes could extend substantially to the plate edges, or could be located off center, either mutually or independently.
- At least one of the upper and lower electrodes have a first periodic pattern 28 along a portion of a first edge 30 of the at least one of the upper and lower electrode.
- the first periodic pattern 28 causes destructive interference with an undesirable vibrational mode of the piezoelectric plate 22.
- the desired mode such as a thickness-shear mode, is not affected because it is primarily trapped in the middle of the width of the plate.
- the undesirable vibrational mode includes, but is not limited to, at least one of the group consisting of flexure modes and face-shear modes. Destructive interference is provided having the periodic pattern 28 of a different wavelength than those of the flexure or face-shear modes.
- the upper and lower electrodes are substantially opposing and have substantially the same periodic pattern.
- the periodic pattern 28 is shown along a length direction 32 of the electrode 26.
- the periodic pattern 28 could also be located along a width direction 38 of the electrode 26, or on a portion of both the length and width of the electrode.
- the principle of using electrode edge wave patterns in the present invention can be extended to shapes which deviate slightly from rectangular or are substantially non-rectangular (e.g. round, oval, square, polygonal, hybrid or irregular shapes) plates and electrodes, also.
- the periodic pattern could appear on an edge of a void within the edge boundaries of the electrode plating. However, having an opening in the electrode plating could degrade the desired operating mode.
- the piezoelectric plate is a quartz crystal plate and, in particular, an AT-cut quartz plate.
- An AT-cut resonator when energized by an AC signal, drives a desired thickness-shear mode of vibration within the quartz plate.
- the periodic pattern can take on any waveshape such as square, triangular, sawtooth, alternating semi-circles, sinusoidal, etc..
- the pattern could include a combination of different wavelengths, amplitudes, or waveshapes, and can includes gaps with no pattern.
- the first periodic pattern is of a sinusoidal waveshape since this does not generate energy-wasting harmonics and most closely matches the naturally sinusoidal vibration modes.
- an ascending or descending wavelength within the wave pattern can be used to cover a specific range of wavelengths and frequencies. It is also possible to superimpose several waveforms of differing wavelengths along a portion of an edge of an electrode in order to generate a particular desired set of responses.
- One of the novel aspects of the present invention is that it uses a wave pattern having a wavelength that is different than the wavelengths of those undesired vibrational modes having a frequency nearby that of a desired vibrational mode. Using a wave pattern with a wavelength the same as one of the undesired vibrational modes may constructively support that mode which is not desired.
- the present invention advantageously uses a wave pattern having a wavelength that is different than the wavelengths of nearby undesired vibrational mode thereby destructively interfering with those modes (e.g. face-shear or flexure modes, for example) reducing their impact on the desired mode (e.g. a thickness shear-mode in an AT-cut quartz resonator, for example).
- the first periodic pattern has a first wavelength that is between the wavelengths of the group of undesirable vibrational modes, such as face-shear or flexure modes, for example.
- the wavelength of the first periodic pattern can be the average of all the wavelengths of the nearby undesired vibrational modes, or it can be a weighted average of all the nearby undesired vibrational modes, or most practically it can be a weighted average of the most dominant nearby undesired vibrational modes, particularly those modes which disturb the frequency-temperature or resistance- temperature response of the resonator.
- the wavelength of the first periodic pattern can match, and may therefore support, a wavelength of other vibrational modes, the frequency of those vibrational modes will not be close to the frequency of the desired vibrational mode (e.g. thickness-shear) so as to couple to and adversely disturb the desired frequency-temperature or resistance- temperature response.
- the desired vibrational mode e.g. thickness-shear
- FIG. 4 shows a second and preferred embodiment of the present invention which includes at least one electrode being generally rectangular with a first periodic pattern 28 substantially along a first edge 30 in a length direction 32 of the plate 22 and a second periodic pattern 34 substantially along an opposite second edge 36 in a length direction 32 of the plate 22.
- the first periodic pattern 28 is offset about one-quarter wavelength from the second periodic pattern 34 along the length direction 32 of the plate 22.
- a quarter wavelength offset serves to discourage any off- frequency undesired modes (e.g. face-shear and flexure) that have a wavelength near that of the first periodic pattern. Such modes contribute to spurious frequency modes which could adversely affect potential customer applications, even though these modes are away from a desired mode and frequency (e.g.
- the first and second periodic patterns could have different wavelengths to address different undesired vibrational modes. Moreover, the first and second periodic patterns could have different amplitudes as needed to diminish an undesirable mode.
- the upper and lower electrodes have corresponding and aligned first and second periodic patterns, respectively. More particularly, the electrode patterns are the same and are aligned.
- FIG. 5 shows a third embodiment of the present invention which incorporates all the limitations of FIG. 4, which is hereby incorporated by reference.
- the at least one electrode 26 includes a third periodic pattern 40 along a portion of a third edge 42 in a width direction 38 of the plate 22, and a fourth periodic pattern 44 along a portion of an opposite fourth edge 46 in the width 38 direction of the plate 22.
- This is useful in cases were a specific undesired vibrational mode has a predominant effect in a width direction 38 of the plate 22.
- These cases can be addressed by the third and fourth periodic patterns 40, 44 independently of an undesired vibrational mode having a predominant affect in a length direction 32 of the plate 22 which are addressed by the first and second periodic patterns 28, 34.
- this embodiment includes the first and second periodic patterns have a first periodicity, and the third and fourth periodic patterns have a second periodicity such that, when the electrodes are energized by an AC signal, the first and second periodic patterns cause destructive interference with a first undesirable vibrational mode and the third and fourth periodic patterns cause destructive interference with a second undesirable vibrational mode.
- at least one of the first and second periodic patterns or the third and fourth periodic patterns could be offset by one-quarter wavelength for the reasons stated earlier.
- the first and/or second periodicity is chosen to be at a wavelength away from a periodicity of an undesired face-shear vibrational mode which is nearby a desired thickness-shear vibrational mode.
- the second periodicity is chosen to be at a wavelength away from a periodicity of an undesired flexure vibrational mode which is nearby a desired thickness-shear vibration mode, also.
- the periodic patterns could have any combination of different periodicities to address undesired vibrational modes in either of a corresponding length or width direction of the plate. This can include differences in wavelengths between corresponding edges of the upper and lower electrodes.
- the periodic patterns can take on any waveshape such as square, triangular, sawtooth, alternating semi-circles, sinusoidal, etc..
- the periodic patterns are of a sinusoidal shape since this does not generate energy-wasting harmonics and most closely matches the naturally sinusoidal vibration modes.
- the patterns could also have ascending or descending wavelengths within the wave pattern which can be used to cover a specific range of wavelengths and frequencies.
- the periodic patterns could have any combination of different amplitudes to address undesired vibrational modes of differing magnitudes. This can include differences in amplitude of wave patterns between corresponding edges of the upper and lower electrodes.
- the patterns could also have ascending or descending amplitudes within the wave pattern to cover a specific range of magnitudes.
- FIG. 6 shows a block diagram of a communication device 200 which includes a temperature compensated crystal oscillator (TCXO) circuit as a reference oscillator 300.
- the TCXO circuit utilizes a quartz resonator, in accordance with the present invention.
- the communication device 200 is a well known frequency synthesized two-way transceiver which operates under the control of a controller 210.
- the communication device 200 includes a receiver 220 and a transmitter 230 which receive and transmit RF via an antenna 240.
- the antenna 240 is appropriately coupled between the receiver 220 and the transmitter 230 by a duplexer or an antenna switch 250.
- the communication device 200 also includes a well known phase locked loop synthesizer 260 which, under the control of the controller 210, provides a receiver local oscillator signal 262 and a transmitter local oscillator signal 264.
- the reference oscillator 300 includes the quartz resonator of the present invention and provides a reference signal 272 for the synthesizer 260.
- the reference signal 272 is generated utilizing the principles of the present invention.
- a piezoelectric body will support vibration modes along an edge that have an integral number of half wavelengths, with nodes being one-quarter wavelength in from each respective edge, and every one-half wavelength thereafter.
- the wavelength of a desired thickness-shear vibration is:
- t is the thickness of the blank (at one-half wavelength) and n is the overtone mode of operation.
- n the overtone mode of operation.
- the acoustic wave velocity of quartz is known to be about 3300 m/sec. Therefore, the wavelength of a desired thickness-shear vibration is:
- f is the fundamental frequency of the blank and n is the overtone mode of operation. Therefore, for a 13 MHz AT-cut quartz blank for example, a thickness-shear wavelength of about 0.254 mm, or a blank thickness (one-half wavelength) of about 0.127 mm, is demonstrated.
- quartz is anisotropic the acoustic wave velocity of quartz is different in different directions. Fortunately, we are only concerned with undesirable frequency modes that are near to the desired frequency mode. Therefore, the frequency of the undesired modes is approximately known.
- the wavelength of the face-shear and flexure modes that are near in frequency to the thickness shear mode are defined by their associated acoustic wave velocities. It is calculated that the acoustic wave velocity of the face-shear mode is about 4808 m/sec, and the acoustic wave velocity of the flexure mode is about 2702 m/sec. It is not necessary to obtain exact relationships for these modes since the present invention serves to avoid these frequencies, and the exact frequency of the undesired modes will be rounded off to the nearest half-wavelength supported by a length or width of the blank.
- the wavelength of the face-shear mode at the same frequency as a desired thickness-shear mode will be about 145% (4808/3300) of the thickness-shear wavelength
- the wavelength of the flexure mode at the same frequency as a desired thickness-shear mode will be about 82% (2702/3300) of the thickness-shear wavelength
- the blank will only support an integer multiple of half-wavelengths.
- the length of the blank will most likely support a face-shear frequency having 13 or 12.5 wavelengths, which is close enough to the desired thickness-shear frequency to cause activity dips as the two frequencies shift at different rates over temperature.
- the width of the blank will most likely support a flexure frequency having 1 1.5 or 12 wavelengths, which is close enough to the desired thickness-shear frequency to cause activity dips as the two frequencies shift at different rates over temperature.
- the frequency of an exact 1 1.5 wavelength flexure mode along the 2.4 mm width of the blank is about
- the flexure mode also has a second vibration component in the length direction of the blank.
- This flexure- length mode can be described as:
- the flexure-length component is an important element in coupling to and disturbing the temperature performance of the thickness-shear mode, and in particular the second and third harmonics of the flexure-length component which have a wavelength that is much greater than the face-shear mode.
- the electrode edge wave pattern serves to break up the flexure wave propagating in the width direction and to destructively interfere with the second and third harmonic of the flexure-length component. It is desired to choose a wavelength of the edge wave periodic pattern of the electrode that is not equal to a wavelength of the face-shear and flexure modes, or any of their local harmonic or subharmonic modes. This prevents possible constructive interference with those undesired modes, and provides destructive interference to reduce those undesired modes.
- the undesirable subharmonic mode wavelengths are:
- ⁇ FS 0.37 mm, 0.74 mm, 1.11 mm ...
- ⁇ F 0.21 mm, 0.42 mm, 0.84 mm ...
- the undesirable second and third harmonic mode wavelengths are:
- a wavelength of the edge wave pattern of the electrode was chosen that is between the maximum (2.4 mm) and the minimum (0.26 mm) of the undesired wavelengths so as to destructive interfere with both undesired modes and to give a sufficient number of easily patterned wavelengths along the edge of the electrode to be useful.
- the wavelength of the edge wave pattern was chosen to be away from any of the above harmonics of the undesirable modes.
- the above collection of harmonic modes show a concentration of five modes from 0.37 mm to 0.6 mm, and another concentration of four modes from 0.74 mm to 0.84 mm.
- the wavelength for the electrode edge wave pattern was chosen to be between these two concentration of modes; about 0.69 mm (3-1/2 wavelengths along the edge of the electrode).
- the upper and lower electrodes were configured as shown in FIG. 3, with the same wavelength edge wave pattern of 0.69 mm along each overlapping length edge of each electrode, with the wave pattern along one edge being offset from the wave pattern on the opposite edge by one-quarter wavelength. In this configuration the upper and lower electrodes had identical configurations. In addition, the amplitude of the edge wave patterns was chosen to be 0.09 mm, or one-quarter of the edge wave wavelength. About forty resonators with the above wave edge pattern were constructed and compared to a group of controls having straight-edged rectangular electrodes of the dimensions listed above for FIG. 1 . The resonators were temperature tested in a frequency range of -35°C to 105°C at 5°C intervals.
- Test category highest lowest median Maximum resistance (ohms) 38 20 25 Max. delta deviation (ppm) 0.220 0.020 0.080 Avg. delta deviation (ppm) 0.060 0.005 0.020
- the experimental group shows a tighter distribution of values (i.e., range between the highest and lowest values).
- the highest numbers in the experimental group are lower than the highest numbers in the control group in all test categories.
- the amplitude of the wave pattern could vary about ⁇ 50% with acceptable results. Amplitudes larger or smaller than this degraded the effectiveness of the present invention.
- the present invention provides a significant improvement is obtained in frequency-temperature performance of a quartz AT-cut resonator, using existing equipment and techniques.
- the present invention advantageously provides a resistance-temperature response which is better than existing resonators.
- the present invention provides a piezoelectric resonator which exhibits good frequency stability over a large temperature range with a uniform resistance response which improves the performance of a radio communication device that incorporates the present invention.
Abstract
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Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98914642A EP0986829A1 (en) | 1997-06-05 | 1998-04-09 | Electrode edge wave patterns for piezoelectric resonator |
JP50238699A JP2001508630A (en) | 1997-06-05 | 1998-04-09 | Electrode edge waveform patterns for piezoelectric resonators |
EP98925098A EP0943159A1 (en) | 1997-06-05 | 1998-06-02 | Electrode edge wave patterns for piezoelectric resonator |
PCT/US1998/011133 WO1998056049A1 (en) | 1997-06-05 | 1998-06-02 | Electrode edge wave patterns for piezoelectric resonator |
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US08/869,895 | 1997-06-05 | ||
US08/869,895 US5920146A (en) | 1997-06-05 | 1997-06-05 | Electrode edge wave patterns for piezoelectric resonator |
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WO1998056050A1 true WO1998056050A1 (en) | 1998-12-10 |
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PCT/US1998/007108 WO1998056050A1 (en) | 1997-06-05 | 1998-04-09 | Electrode edge wave patterns for piezoelectric resonator |
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US (1) | US5920146A (en) |
EP (1) | EP0986829A1 (en) |
JP (1) | JP2001508630A (en) |
KR (1) | KR20010013453A (en) |
CN (1) | CN1269057A (en) |
WO (1) | WO1998056050A1 (en) |
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CN210405247U (en) * | 2019-11-12 | 2020-04-24 | 迈感微电子(上海)有限公司 | Bulk acoustic wave resonator |
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US4218631A (en) * | 1977-06-08 | 1980-08-19 | Kinsekisha Laboratory, Ltd. | Electrode structure for thickness mode piezoelectric vibrating elements |
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JPS5938764B2 (en) * | 1977-02-09 | 1984-09-19 | 株式会社精工舎 | Thickness slip crystal resonator |
JPS54138392A (en) * | 1978-04-20 | 1979-10-26 | Citizen Watch Co Ltd | At cut crystal oscillator |
JPS6013608B2 (en) * | 1979-03-12 | 1985-04-08 | 株式会社精工舎 | Thickness sliding piezoelectric vibrator |
US4468582A (en) * | 1982-04-20 | 1984-08-28 | Fujitsu Limited | Piezoelectric resonator chip and trimming method for adjusting the frequency thereof |
JPS59174010A (en) * | 1983-03-23 | 1984-10-02 | Miyota Seimitsu Kk | Rectangular at-cut quartz oscillator |
US4564782A (en) * | 1983-09-02 | 1986-01-14 | Murata Manufacturing Co., Ltd. | Ceramic filter using multiple thin piezoelectric layers |
DE3501808A1 (en) * | 1985-01-21 | 1986-07-24 | Siemens AG, 1000 Berlin und 8000 München | ULTRASONIC CONVERTER |
JPH03151705A (en) * | 1989-11-08 | 1991-06-27 | Murata Mfg Co Ltd | Piezoelectric vibration element |
WO1992017937A1 (en) * | 1991-03-28 | 1992-10-15 | Siemens Aktiengesellschaft | Surface-wave device with a feature designed to avoid acoustic-wave interference |
US5578974A (en) * | 1995-04-28 | 1996-11-26 | Motorola, Inc. | Piezoelectric filter with a curved electrode |
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1997
- 1997-06-05 US US08/869,895 patent/US5920146A/en not_active Expired - Fee Related
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1998
- 1998-04-09 KR KR1019997011456A patent/KR20010013453A/en not_active Application Discontinuation
- 1998-04-09 EP EP98914642A patent/EP0986829A1/en not_active Withdrawn
- 1998-04-09 WO PCT/US1998/007108 patent/WO1998056050A1/en not_active Application Discontinuation
- 1998-04-09 CN CN98807368A patent/CN1269057A/en active Pending
- 1998-04-09 JP JP50238699A patent/JP2001508630A/en active Pending
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US4218631A (en) * | 1977-06-08 | 1980-08-19 | Kinsekisha Laboratory, Ltd. | Electrode structure for thickness mode piezoelectric vibrating elements |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002103900A1 (en) * | 2001-06-15 | 2002-12-27 | Ube Electronics, Ltd. | Thin-film piezoelectric resonator |
JP2006246542A (en) * | 2006-06-16 | 2006-09-14 | Kyocera Corp | Crystal oscillator and crystal device mounting the same |
JP4557926B2 (en) * | 2006-06-16 | 2010-10-06 | 京セラ株式会社 | Quartz crystal resonator and crystal device equipped with the same |
Also Published As
Publication number | Publication date |
---|---|
EP0986829A1 (en) | 2000-03-22 |
CN1269057A (en) | 2000-10-04 |
US5920146A (en) | 1999-07-06 |
JP2001508630A (en) | 2001-06-26 |
KR20010013453A (en) | 2001-02-26 |
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