WO1999026292A3 - Semiconductor device of sic with insulating layer and a refractory metal nitride layer - Google Patents
Semiconductor device of sic with insulating layer and a refractory metal nitride layer Download PDFInfo
- Publication number
- WO1999026292A3 WO1999026292A3 PCT/SE1998/002049 SE9802049W WO9926292A3 WO 1999026292 A3 WO1999026292 A3 WO 1999026292A3 SE 9802049 W SE9802049 W SE 9802049W WO 9926292 A3 WO9926292 A3 WO 9926292A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- sic
- metal nitride
- semiconductor device
- refractory metal
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000003870 refractory metal Substances 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP98956065A EP1029357A2 (en) | 1997-11-13 | 1998-11-13 | Semiconductor device of sic with insulating layer and a refractory metal nitride layer |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9704150A SE9704150D0 (en) | 1997-11-13 | 1997-11-13 | Semiconductor device of SiC with insulating layer a refractory metal nitride layer |
SE9704150-3 | 1997-11-13 | ||
US08/972,253 US6025608A (en) | 1997-11-13 | 1997-11-18 | Semiconductor device of SiC with insulating layer and a refractory metal nitride layer |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999026292A2 WO1999026292A2 (en) | 1999-05-27 |
WO1999026292A3 true WO1999026292A3 (en) | 1999-07-29 |
Family
ID=26663126
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/SE1998/002049 WO1999026292A2 (en) | 1997-11-13 | 1998-11-13 | Semiconductor device of sic with insulating layer and a refractory metal nitride layer |
Country Status (3)
Country | Link |
---|---|
US (1) | US6025608A (en) |
SE (1) | SE9704150D0 (en) |
WO (1) | WO1999026292A2 (en) |
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US6972436B2 (en) * | 1998-08-28 | 2005-12-06 | Cree, Inc. | High voltage, high temperature capacitor and interconnection structures |
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US6610366B2 (en) | 2000-10-03 | 2003-08-26 | Cree, Inc. | Method of N2O annealing an oxide layer on a silicon carbide layer |
US6956238B2 (en) | 2000-10-03 | 2005-10-18 | Cree, Inc. | Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel |
US6767843B2 (en) | 2000-10-03 | 2004-07-27 | Cree, Inc. | Method of N2O growth of an oxide layer on a silicon carbide layer |
US7067176B2 (en) | 2000-10-03 | 2006-06-27 | Cree, Inc. | Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment |
US6528373B2 (en) * | 2001-02-12 | 2003-03-04 | Cree, Inc. | Layered dielectric on silicon carbide semiconductor structures |
JP4647211B2 (en) * | 2001-11-30 | 2011-03-09 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
US7022378B2 (en) * | 2002-08-30 | 2006-04-04 | Cree, Inc. | Nitrogen passivation of interface states in SiO2/SiC structures |
US7221010B2 (en) * | 2002-12-20 | 2007-05-22 | Cree, Inc. | Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors |
US6979863B2 (en) * | 2003-04-24 | 2005-12-27 | Cree, Inc. | Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same |
US7074643B2 (en) * | 2003-04-24 | 2006-07-11 | Cree, Inc. | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
US7118970B2 (en) * | 2004-06-22 | 2006-10-10 | Cree, Inc. | Methods of fabricating silicon carbide devices with hybrid well regions |
FR2876497B1 (en) * | 2004-10-13 | 2007-03-23 | Commissariat Energie Atomique | MGO-BASED COATING FOR THE ELECTRICAL INSULATION OF SEMICONDUCTOR SUBSTRATES AND METHOD OF MANUFACTURING THE SAME |
US7414268B2 (en) | 2005-05-18 | 2008-08-19 | Cree, Inc. | High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities |
US7391057B2 (en) * | 2005-05-18 | 2008-06-24 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US20060261346A1 (en) * | 2005-05-18 | 2006-11-23 | Sei-Hyung Ryu | High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same |
US7615801B2 (en) * | 2005-05-18 | 2009-11-10 | Cree, Inc. | High voltage silicon carbide devices having bi-directional blocking capabilities |
US7528040B2 (en) | 2005-05-24 | 2009-05-05 | Cree, Inc. | Methods of fabricating silicon carbide devices having smooth channels |
US7727904B2 (en) | 2005-09-16 | 2010-06-01 | Cree, Inc. | Methods of forming SiC MOSFETs with high inversion layer mobility |
US8432012B2 (en) | 2006-08-01 | 2013-04-30 | Cree, Inc. | Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same |
US7728402B2 (en) * | 2006-08-01 | 2010-06-01 | Cree, Inc. | Semiconductor devices including schottky diodes with controlled breakdown |
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US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
US8288220B2 (en) * | 2009-03-27 | 2012-10-16 | Cree, Inc. | Methods of forming semiconductor devices including epitaxial layers and related structures |
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US8629509B2 (en) * | 2009-06-02 | 2014-01-14 | Cree, Inc. | High voltage insulated gate bipolar transistors with minority carrier diverter |
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US8415671B2 (en) | 2010-04-16 | 2013-04-09 | Cree, Inc. | Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices |
US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
US9984894B2 (en) | 2011-08-03 | 2018-05-29 | Cree, Inc. | Forming SiC MOSFETs with high channel mobility by treating the oxide interface with cesium ions |
US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
CN103918079B (en) | 2011-09-11 | 2017-10-31 | 科锐 | Including the high current density power model with the transistor for improving layout |
US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
US20150255362A1 (en) | 2014-03-07 | 2015-09-10 | Infineon Technologies Ag | Semiconductor Device with a Passivation Layer and Method for Producing Thereof |
US11238340B1 (en) * | 2016-12-21 | 2022-02-01 | Facebook Technologies, Llc | Predictive eyetracking using recurrent neural networks |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935804A (en) * | 1984-03-19 | 1990-06-19 | Fujitsu Limited | Semiconductor device |
WO1995022838A1 (en) * | 1994-02-18 | 1995-08-24 | Telefonaktiebolaget Lm Ericsson | Electromigration resistant metallization structures for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
US5597744A (en) * | 1994-06-07 | 1997-01-28 | Mitsubishi Materials Corporation | Method of producing a silicon carbide semiconductor device |
US5739579A (en) * | 1992-06-29 | 1998-04-14 | Intel Corporation | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5216264A (en) * | 1989-06-07 | 1993-06-01 | Sharp Kabushiki Kaisha | Silicon carbide MOS type field-effect transistor with at least one of the source and drain regions is formed by the use of a schottky contact |
JP2509713B2 (en) * | 1989-10-18 | 1996-06-26 | シャープ株式会社 | Silicon carbide semiconductor device and manufacturing method thereof |
KR960009013A (en) * | 1994-08-18 | 1996-03-22 | 김광호 | Titanium nitride (TiN) gate electrode formation method |
US5742076A (en) * | 1996-06-05 | 1998-04-21 | North Carolina State University | Silicon carbide switching devices having near ideal breakdown voltage capability and ultralow on-state resistance |
-
1997
- 1997-11-13 SE SE9704150A patent/SE9704150D0/en unknown
- 1997-11-18 US US08/972,253 patent/US6025608A/en not_active Expired - Lifetime
-
1998
- 1998-11-13 WO PCT/SE1998/002049 patent/WO1999026292A2/en not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4935804A (en) * | 1984-03-19 | 1990-06-19 | Fujitsu Limited | Semiconductor device |
US5739579A (en) * | 1992-06-29 | 1998-04-14 | Intel Corporation | Method for forming interconnections for semiconductor fabrication and semiconductor device having such interconnections |
WO1995022838A1 (en) * | 1994-02-18 | 1995-08-24 | Telefonaktiebolaget Lm Ericsson | Electromigration resistant metallization structures for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
US5597744A (en) * | 1994-06-07 | 1997-01-28 | Mitsubishi Materials Corporation | Method of producing a silicon carbide semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
SE9704150D0 (en) | 1997-11-13 |
US6025608A (en) | 2000-02-15 |
WO1999026292A2 (en) | 1999-05-27 |
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