WO1999031724A1 - Post-lapping cleaning process for silicon wafers - Google Patents
Post-lapping cleaning process for silicon wafers Download PDFInfo
- Publication number
- WO1999031724A1 WO1999031724A1 PCT/US1998/025440 US9825440W WO9931724A1 WO 1999031724 A1 WO1999031724 A1 WO 1999031724A1 US 9825440 W US9825440 W US 9825440W WO 9931724 A1 WO9931724 A1 WO 9931724A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- wafer
- bath
- set forth
- percent
- immersing
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 69
- 230000008569 process Effects 0.000 title claims abstract description 62
- 238000004140 cleaning Methods 0.000 title claims abstract description 23
- 235000012431 wafers Nutrition 0.000 title claims description 202
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 11
- 229910052710 silicon Inorganic materials 0.000 title description 11
- 239000010703 silicon Substances 0.000 title description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims abstract description 72
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 52
- 239000000356 contaminant Substances 0.000 claims abstract description 21
- 239000004094 surface-active agent Substances 0.000 claims abstract description 15
- 239000007800 oxidant agent Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 14
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 12
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000012535 impurity Substances 0.000 description 19
- 239000000243 solution Substances 0.000 description 16
- 239000002245 particle Substances 0.000 description 8
- 230000001590 oxidative effect Effects 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000013019 agitation Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- 241000252506 Characiformes Species 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000013505 freshwater Substances 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 239000013528 metallic particle Substances 0.000 description 1
- VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005201 scrubbing Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 230000007306 turnover Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Definitions
- the process of the present invention relates generally to the cleaning of semiconductor wafers. More particularly, the present invention relates to a sequence of treatment steps for the cleaning of organic residues, metallic impurities and other particulate contaminants which may be present on the surface of lapped single crystal silicon wafers.
- Semiconductor wafers used in the fabrication of integrated circuits are produced by slicing thin wafers from a single crystal silicon ingot. After slicing, the wafers undergo a lapping process to give them a somewhat uniform thickness. The wafers are then etched to remove damage and produce a smooth surface.
- the final step in a conventional semiconductor wafer shaping process is a polishing step to produce a highly reflective and damage- free surface on at least one face of the wafer. It is upon this polished face that integrated circuit fabrication takes place.
- the wafers must be cleaned between the lapping and etching steps in order to remove such things as lapping grit (e.g., alumina) and organic residues, as well as metallic contaminants and other types of particulate impurities. If the cleaning process is not effective, the surfaces of the wafer will be contaminated, or "stained,” with these impurities. Additionally, some of these contaminants may transfer from one side of the wafer to the other, such as from the unpolished side of the wafer to the polished side. If integrated circuits are fabricated on a wafer surface stained with these impurities, the quality and performance of these circuits may be greatly diminished.
- lapping grit e.g., alumina
- the wafers are typically inspected for stains, which indicate the presence of these contaminants, by visually examining the wafers while under either bright light or fluorescent light illumination.
- Cleaning of lapped silicon wafers is generally done in ultrasonic tanks using caustic solutions with or without a surfactant to assist in wetting and dispensing dirt.
- the total processing time to produce sufficiently clean wafers may be thirty or more minutes. Such prolonged exposure to ultrasonics can cause damage to the crystal lattices of the wafers.
- the application of ultrasonic energy to the cleaning tanks results in the formation of standing waves. Consequently, the silicon wafers are exposed to nonuniform energy and are not sufficiently cleaned.
- the provision of an improved process for cleaning the surface of a semiconductor wafer ; the provision of such a process which provides a wafer surface suitable for integrated circuit fabrication; the provision of such a process which effectively removes lapping grit, organic residues and other particulate impurities from the wafer surface; and, the provision of such a process which maximizes the effectiveness of ultrasonics in the cleaning process without causing damage to the crystal lattice of the wafer.
- the present invention is directed to a process for cleaning contaminants from the surface of a semiconductor wafer after the wafer has been lapped.
- the process comprises contacting the wafer with an oxidizing agent to oxidize organic contaminants which may be present on the wafer surface.
- the wafer is immersed in an aqueous bath comprising citric acid, into which sonic energy is being directed, in order to remove metallic contaminants which may be present on the surface of the wafer.
- the wafer is subsequently contacted with hydrofluoric acid to remove a layer of silicon dioxide which may be present on the surface of the wafer, and then it is immersed in an aqueous bath into which sonic energy is directed, the bath comprising an alkaline component and a surfactant.
- the present invention is further directed to such a cleaning process wherein multiple wafers may be cleaned at one time using a wafer carrier in order to increase throughput.
- a wafer carrier When a wafer carrier is used, the carrier is rinsed with water after treatment with hydrofluoric acid and before being immersed in the aqueous alkaline bath.
- lapping slurry contains lapping grit and suspending or binding compounds which are organic in nature and which trap particulate impurities, such as alumina, to the surface of the wafer.
- these and other particulate impurities which may be present are removed by first contacting, or treating, the lapped silicon wafer with either a gaseous or a liquid oxidizing agent.
- suitable oxidizing agents include ozone, SC-1 (a solution comprising ammonium hydroxide, hydrogen peroxide, and water in a 1:1:5 ratio), piranha bath, sulfuric acid with ozone, and aqua regia.
- the oxidizing agent reacts with, or oxidizes, the suspending or binding compounds, as well as a number of other organic impurities present on the wafer surface.
- the oxidation of these compounds acts to breakdown the carbon bonds within them, resulting in their decomposition into carbon dioxide and water.
- the oxidation therefore allows for impurities such as alumina to be readily removed because they are no longer bound by these compounds to the silicon wafer surface.
- the semiconductor wafer is immersed in an oxidizing bath comprising ozonated water.
- concentration of ozone in solution typically ranges from about 5 to about 50 ppm.
- concentration ranges from about 10 to about 20 ppm and, more preferably, from about 14 to about 16 ppm.
- the temperature of the bath is below ambient temperature.
- the temperature ranges from about 0°C to about 25°C and, more preferably, from about 10°C to about 15°C.
- the residence time of the wafer within the oxidizing bath typically ranges from about 10 seconds to about 120 seconds, and preferably ranges from about 20 seconds to 45 seconds. More preferably, the residence time of the wafer within the oxidizing bath ranges from about 25 seconds to about 35 seconds .
- the semiconductor wafer After being treated with the oxidizing agent, the semiconductor wafer is immersed in an aqueous bath comprising citric acid.
- concentration of citric acid in the bath preferably ranges from about 1 to about 5 percent by weight, and more preferably ranges from about 2 to about 3 percent by weight .
- the pH of the citric acid bath typically ranges from about 1 to about 3.
- the pH ranges from about 2.2 to about 2.5.
- the temperature of the citric acid bath typically ranges from about 50°C to about 70°C, and preferably from about 55°C to about 65°C.
- the residence time of the wafer within the bath is typically at least about 4 minutes.
- the wafer will be immersed in the bath for about 4.5 to about 6 minutes .
- the citric acid serves as a complexing agent and acts to trap metal ions, particularly aluminum, iron and titanium, which are present on the surface of the wafer and in the bath itself. Once these complexes are formed, the citric acid further acts to flocculate the particles into larger structures. In this way, fine particulate may be transformed into larger particles which are more readily filtered and removed. As a result, the citric acid bath acts to limit the likelihood that lapping grit and other particulate impurities will be redeposited on the wafer surface after having been removed.
- a layer of silicon dioxide is typically present on the wafer surface.
- This layer, or film may be in part native and in part the result of wafer treatment in an oxidizing bath.
- Various particles, such as lapping grit and trace metallic impurities not stripped by the citric acid bath, are often incorporated within this film and thus act to contaminate the wafer surface.
- the oxide film is removed from the wafer surface by contacting the wafer with hydrofluoric acid.
- the hydrofluoric acid step may be carried out by exposing the wafer to a hydrofluoric acid vapor (see, e.g., Prigge et al . , U.S. Pat. No.
- the wafer be immersed in an aqueous bath comprising hydrofluoric acid.
- the concentration of the hydrofluoric acid in the bath ranges from about 1 to about 50 percent by volume, and more preferably from about 1 to about 5 percent by volume .
- the temperature of the hydrofluoric acid bath preferably ranges from about 20°C to about 80 °C, and more preferably from about 20 °C to about 60°C.
- the residence time of the wafer within the hydrofluoric acid bath is at least about 30 seconds. Preferably, however, the wafer will reside within the bath for about 1 to about 15 minutes, and more preferably for about 4 minutes to about 5 minutes .
- the semiconductor wafer After being treated with hydrofluoric acid, the semiconductor wafer is immersed in an aqueous bath comprising an alkaline component and a surfactant .
- the temperature of the alkaline bath is preferably about 50°C to about 70 °C, and more preferably about 55 °C to about 65°C.
- the residence time of the wafer within the alkaline bath is about 4 minutes to about 30 minutes, more preferably about 6 minutes to about 20 minutes, and most preferably about 8 minutes to about 10 minutes.
- Suitable alkaline components include a SC-1 solution, as well as any alkali cleaning medium, including a solution containing either potassium hydroxide, sodium hydroxide, lithium hydroxide, potassium carbonate, sodium carbonate, or any of the corresponding bicarbonates, as well as any alkaline phosphate. Any of these alkaline solutions may be used in combination with surfactants that are commonly known in the art to be suitable for use as a wafer cleaning agent under alkaline conditions .
- the alkaline bath comprises potassium hydroxide at a concentration typically ranging from about 1 to about 5 percent by volume of the bath, and preferably ranging from about 2 to about 4 percent by volume.
- the alkaline bath also comprises a surfactant which is preferably a commercially available detergent, such as Vector HTC (available from
- the concentration of the surfactant in the bath ranges from about 1 to about 5 percent by volume, and more preferably from about 2 to about 4 percent by volume.
- the alkaline bath aids in the cleaning process by changing the surface potential of the silicon wafer, thus causing the surface of the wafer to electrostatically repel silica and other particulate impurities which may be present . It is to be noted in this regard that the previous steps in the present process, particularly the hydrofluoric acid step, resulted in the wafer having a surface potential . By treating the wafer with an alkaline bath, the surface potential is changed.
- the alkaline bath step can be divided into two separate steps .
- the wafer instead of using a single alkaline bath in which the wafer most preferably resides for about 8 to about 10 minutes, the wafer is placed in each of two separate alkaline baths, successively. The wafer resides in each bath for about 4 minutes to about 5 minutes .
- the wafer After treatment with the alkaline bath, or baths, the wafer is preferably rinsed with water by fully immersing it in a water bath.
- the temperature of the water bath is typically about 20°C to about 65°C, and preferably about 45 °C to about 55 °C.
- the residence time of the wafer within the water bath is typically about 2 to about 5 minutes, and preferably about 3 to about 4 minutes.
- water is continuously removed and replaced with fresh water. In this way the entire volume of the bath is preferably removed and replaced about 1 to about 2 times while the wafer is being rinsed.
- the wafer is preferably treated again with an oxidizing agent in the same manner in which the first oxidation treatment was performed.
- This step acts to oxidize any remaining organic residues, such as those resulting from surfactants not removed by the water rinse.
- This step also promotes the growth of an oxide layer on the surface of the wafer which acts to protect the wafer from contamination by passivating the wafer surface. Passivation is necessary because, without an oxide layer, there exists an active charge on the surface of the wafer. This active charge can attract oppositely charged particles and result in the surface becoming recontaminated. By passivating the surface charge, this attraction may be eliminated.
- the silicon wafer may be dried by conventional means as necessary for additional processing.
- throughput is increased by processing multiple wafers at one time. This is achieved by inserting wafers into a wafer carrier, or cassette, which acts to secure the wafers while they are immersed in the baths and transferred between the baths.
- the wafer carrier is typically a conventional cassette, such as a model X4200-01 cassette which is commercially available from Empak of Colorado Springs, CO.
- the carrier is preferably rinsed with deionized (“DI") water after the hydrofluoric acid treatment step is complete and before the carrier is immersed in the aqueous alkaline bath.
- DI deionized
- This rinsing step acts to remove any residual hydrofluoric acid from the wafer carrier. Failure to rinse the wafer carrier after the hydrofluoric acid step can result in the contamination of subsequent baths. It is to be noted that the wafer itself need not be rinsed because it is hydrophobic at this point in the process and, as such, would be unaffected by a water rinse.
- the rinsing time is preferably minimized to prevent reformation of an oxide layer on the surface of the wafer. Therefore, it is preferred that this rinsing step last for less than about 10 minutes, more preferably for about 10 to about 30 seconds, and most preferably about 15 to about 20 seconds.
- the water rinse will be at ambient temperature .
- the cleaning action of the citric acid bath and the alkaline bath may be enhanced by the application of sonic energy.
- An ultrasonic generator such as the Ney SweepsonicTM (available from Ney Corporation of Bloomfield, CT) , is typically used to direct ultrasonic energy through the baths.
- frequency is controlled by the ultrasonic generator being employed.
- the frequency used may vary as the model and supplier of the ultrasonic generator varies.
- the frequency of the ultrasonic energy generated and directed through the particular bath will range from about 40 to about 120 kHz.
- the ultrasonic power density provided by the ultrasonic generator will typically range from about 20 watts per liter to about 60 watts per liter of solution in the bath, and preferably from about 25 watts to about 30 watts per liter.
- the ultrasonic energy aids in removing particulate contaminants that become trapped in crevices on the wafer surface. Without being held to any particular theory, it is believed that the importance of this mechanical action derives from the fact that cavitation bubbles, generated by the ultrasonic wave, break at the surface of the wafer, causing a scrubbing action on the surface of the wafer.
- the introduction of cleaning solutions with different pH values leads to a change in the charge of particles on the surface of the wafer. This change in charge helps "loosen” the particulate by weakening the attractive forces between the particulate and the wafer surface. After the particles have been so loosened, the mechanical action of the ultrasonic agitation acts to remove the particles from the wafer surface and into the cleaning solution.
- Increased removal of contamination from the wafer surface is preferably achieved, when the wafer is immersed in a solution, by employing the process for cleaning a wafer as disclosed by U.S. Pat. No. 5,593,505 (Erk et al . ) .
- a gas-liquid interface is defined at the surface of the aqueous solution being employed.
- the wafer is placed in the bath so that it is oriented in a generally upright position with at least part of the wafer in the liquid and below the gas-liquid interface. Sonic energy is then directed through the liquid.
- the wafer is simultaneously rotated in a reciprocating motion relative to the bath so that the entire surface of the wafer is repeatedly passed through the gas-liquid interface of the bath.
- the wafer can also be rotated as the level of the liquid in the bath is raised and lowered. This also results in the surface of the wafer being repeatedly passed through the gas-liquid interface.
- the wafer can be repeatedly immersed completely in the bath and then removed completely from the bath. The wafer is continuously rotated while the successive immersions occur. Again, this results in the surface of the wafer being repeatedly passed through the gas-liquid interface. In all cases, at least a portion of the wafer is repeatedly passed through the gas-liquid interface.
- the baths be continuously filtered and recirculated. This feature aids in the removal of impurities from the solution and helps prevent impurities from being redeposited on the wafer surface.
- the recirculation system has a capacity of one bath turnover about every 2 minutes. It is also preferred that the above-described baths be agitated, further aiding in the removal of impurities from the surface of the wafer. This agitation is particularly preferred when a wafer cassette is employed in order aid in the cleaning of the wafer surface at or near the edge, which is in contact with the wafer cassette.
- the present invention is illustrated by the following example which is merely for the purpose of illustration and is not to be regarded as limiting the scope of the invention or manner in which it may be practiced.
- EXAMPLE In accordance with the process of the present invention, multiple lapped single crystal silicon wafers were cleaned at one time by placing them in a wafer cassette and first immersing the cassette in a bath containing ozonated water for about 30 seconds.
- the concentration of the ozone in the bath was about 15 ppm and the bath had a temperature of about 20 °C.
- the wafers were removed from the ozonated water bath and then partially immersed in a bath containing citric acid, through which sonic energy was being directed at a frequency of about 40 kHz.
- the bath was heated to a temperature of about 60 °C, had a pH of about 2, and a citric acid concentration of about 3 percent by weight.
- the wafers were allowed to reside in the citric acid bath for about 4 and a half minutes, during which the wafers were rotated such that at least a portion of each wafer is repeatedly passed through the bath and below the gas- liquid interface.
- the wafers were then removed from the citric acid bath and immersed in a bath containing hydrofluoric acid.
- the concentration of the hydrofluoric acid in the bath was about 2 percent by volume.
- the wafers were allowed to reside in the hydrofluoric acid bath, which was heated to a temperature of about 60 °C, for about 5 minutes.
- the wafers were removed from the hydrofluoric acid bath and then the wafer carrier was rinsed with deionized water at ambient temperature for about 20 seconds, in order to remove any residual hydrofluoric acid present .
- the wafers were partially immersed in a first aqueous alkaline bath, through which sonic energy was directed at a frequency of about 40 kHz.
- the aqueous alkaline bath had a potassium hydroxide concentration of about 2 percent by volume, while the concentration of Vector HTC surfactant was also about 2 percent by volume.
- the wafers were allowed to reside in this first alkaline bath, which had been heated to a temperature of about 60°C, for about 5 minutes, during which the wafers were rotated such that at least a portion of each wafer was repeatedly passed through the bath and below the gas-liquid interface.
- the wafers were then removed from the first aqueous alkaline bath and partially immersed in a second bath having the same composition as the first.
- the second bath was also heated to about 60°C, and the residence time for the wafers in this bath was also about 5 minutes.
- the wafers were rotated such that at least a portion of each wafer repeatedly passed through the bath and below the gas-liquid interface.
- the wafers were then removed from the second aqueous alkaline bath and immersed in a bath containing deionized water. The wafers were allowed to reside in the water bath, which had been heated to about 55°C, for about 3 minutes .
- the wafers were removed from the water bath and oxide layers were grown on the surfaces of the wafers by immersing them in a bath containing ozonated water.
- the composition of this bath was the same as the first oxidizing bath, having a concentration of ozone of about 15 ppm.
- the bath was about 20 °C and the wafers were allowed to reside in this bath only about 30 seconds.
- the wafers were dried by conventional means standard to the art . In total, about 900 wafers were cleaned by the above process. The wafers were examined visually under bright light illumination for the presence of any stains on the surface of the wafers, which indicate the presence of impurities.
- Results indicate that less than about 1% of the wafers which were cleaned in accordance with the present process showed evidence of unacceptable surface stains. By comparison, it is to be noted that experimental evidence to-date indicates that typically about 5 to about 10 percent of the wafers cleaned by conventional processes will be unacceptably stained.
- the first method involves fully immersing the wafer sequentially in (i) a citric acid solution, (ii) a solution of potassium hydroxide and a surfactant, and (iii) a rinse solution of deionized water.
- the second method (commercially available from Wafer Process, located in San Jose, CA) was modified slightly by using the process as disclosed by Erk et al . in U.S. Pat. No. 5,593,505.
- This modified method involves, sequentially, (i) fully immersing the wafer in a citric acid solution, (ii) immersing only half of the wafer in a solution of potassium hydroxide and a surfactant, and then rotating the wafer per the process as disclosed by Erk et al . , and (iii) rinsing the wafer with deionized water.
- sonic energy was directed through the citric acid and potassium hydroxide baths, both at a frequency of about 40 kHz, and the wafers were conventionally dried.
- Approximately 900 wafers were prepared by each of the above-referenced methods. These wafers, as well as an equal number of wafers prepared in accordance with the process of the invention as embodied in the present example, were then analyzed by means of ICP/MS, which is conventional in the art, in order to determine the surface concentration of metallic contaminants.
- ICP/MS is conventional in the art, in order to determine the surface concentration of metallic contaminants.
- the following table illustrates the average concentration of surface metal contaminants found on these wafers.
- the process of the present invention affords the means by which to obtain a significant reduction in the surface concentration of aluminum (Al) , iron (Fe) and titanium (Ti) .
- Al aluminum
- Fe iron
- Ti titanium
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000539523A JP2002509355A (en) | 1997-12-12 | 1998-12-01 | Cleaning method after silicon wafer lapping |
EP98960589A EP1044467A1 (en) | 1997-12-12 | 1998-12-01 | Post-lapping cleaning process for silicon wafers |
KR1020007006302A KR20010032957A (en) | 1997-12-12 | 1998-12-01 | Post-lapping cleaning process for silicon wafers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/990,123 US5837662A (en) | 1997-12-12 | 1997-12-12 | Post-lapping cleaning process for silicon wafers |
US08/990,123 | 1997-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO1999031724A1 true WO1999031724A1 (en) | 1999-06-24 |
Family
ID=25535788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1998/025440 WO1999031724A1 (en) | 1997-12-12 | 1998-12-01 | Post-lapping cleaning process for silicon wafers |
Country Status (8)
Country | Link |
---|---|
US (1) | US5837662A (en) |
EP (1) | EP1044467A1 (en) |
JP (1) | JP2002509355A (en) |
KR (1) | KR20010032957A (en) |
CN (1) | CN1281588A (en) |
MY (1) | MY133080A (en) |
TW (1) | TW419399B (en) |
WO (1) | WO1999031724A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102978711A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for removing oxide film on edge of silicon wafer by using low-temperature HF etching solution |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2722511B1 (en) * | 1994-07-15 | 1999-04-02 | Ontrak Systems Inc | PROCESS FOR REMOVING METALS FROM A SCOURING DEVICE |
US6030932A (en) * | 1996-09-06 | 2000-02-29 | Olin Microelectronic Chemicals | Cleaning composition and method for removing residues |
JPH10309666A (en) * | 1997-05-09 | 1998-11-24 | Speedfam Co Ltd | Edge polishing device and method for it |
JP3324455B2 (en) * | 1997-07-18 | 2002-09-17 | 信越半導体株式会社 | Method for cleaning silicon-based semiconductor substrate |
US6063205A (en) * | 1998-01-28 | 2000-05-16 | Cooper; Steven P. | Use of H2 O2 solution as a method of post lap cleaning |
US6100198A (en) | 1998-02-27 | 2000-08-08 | Micron Technology, Inc. | Post-planarization, pre-oxide removal ozone treatment |
US6596637B1 (en) * | 1998-12-07 | 2003-07-22 | Advanced Micro Devices, Inc. | Chemically preventing Cu dendrite formation and growth by immersion |
JP2000212754A (en) * | 1999-01-22 | 2000-08-02 | Sony Corp | Plating method, its device and plated structure |
US6248704B1 (en) | 1999-05-03 | 2001-06-19 | Ekc Technology, Inc. | Compositions for cleaning organic and plasma etched residues for semiconductors devices |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
DE19953152C1 (en) * | 1999-11-04 | 2001-02-15 | Wacker Siltronic Halbleitermat | Process for wet-chemical treatment of semiconductor wafer after mechanical treatment in lapping machine comprises subjecting to ultrasound in an alkaline cleaning solution before etching and rinsing steps |
JP2001249606A (en) | 2000-03-02 | 2001-09-14 | Sony Corp | Hologram print system, hologram printing method and photographing device |
US6451660B1 (en) * | 2000-06-09 | 2002-09-17 | Agere Systems Guardian Corp. | Method of forming bipolar transistors comprising a native oxide layer formed on a substrate by rinsing the substrate in ozonated water |
US6890861B1 (en) * | 2000-06-30 | 2005-05-10 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US6506254B1 (en) | 2000-06-30 | 2003-01-14 | Lam Research Corporation | Semiconductor processing equipment having improved particle performance |
US6861007B2 (en) * | 2001-03-02 | 2005-03-01 | Micron Technology, Inc. | Method for removing organic material from a substrate and for oxidizing oxidizable material thereon |
US8303722B2 (en) * | 2001-03-16 | 2012-11-06 | Shin-Etsu Handotai Co., Ltd. | Water and method for storing silicon wafer |
US6620743B2 (en) | 2001-03-26 | 2003-09-16 | Asm America, Inc. | Stable, oxide-free silicon surface preparation |
US7320942B2 (en) * | 2002-05-21 | 2008-01-22 | Applied Materials, Inc. | Method for removal of metallic residue after plasma etching of a metal layer |
US20040029494A1 (en) * | 2002-08-09 | 2004-02-12 | Souvik Banerjee | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
US7459005B2 (en) | 2002-11-22 | 2008-12-02 | Akzo Nobel N.V. | Chemical composition and method |
KR101139266B1 (en) * | 2002-12-03 | 2012-05-15 | 가부시키가이샤 니콘 | Contaminant removing method and device, and exposure method and apparatus |
CN1720110B (en) * | 2002-12-03 | 2011-06-01 | 株式会社尼康 | Pollutant removal method optical element, and exposure method and apparatus |
US6796315B2 (en) * | 2003-01-10 | 2004-09-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method to remove particulate contamination from a solution bath |
CN1321755C (en) * | 2003-01-21 | 2007-06-20 | 友达光电股份有限公司 | Method for rinsing surface of silicon and technique for manufacturing thin film transistory by using the rinsing method |
SG135959A1 (en) * | 2003-05-21 | 2007-10-29 | Nihon Ceratec Co Ltd | Cleaning method of ceramic member |
US7699997B2 (en) * | 2003-10-03 | 2010-04-20 | Kobe Steel, Ltd. | Method of reclaiming silicon wafers |
JP4632290B2 (en) * | 2004-03-23 | 2011-02-16 | 日本碍子株式会社 | Cleaning method for aluminum nitride susceptor |
US20050253313A1 (en) * | 2004-05-14 | 2005-11-17 | Poco Graphite, Inc. | Heat treating silicon carbide articles |
US20060102197A1 (en) * | 2004-11-16 | 2006-05-18 | Kang-Lie Chiang | Post-etch treatment to remove residues |
US7479460B2 (en) * | 2005-08-23 | 2009-01-20 | Asm America, Inc. | Silicon surface preparation |
JP2009508350A (en) * | 2005-09-13 | 2009-02-26 | エヌエックスピー ビー ヴィ | Substrate processing method and apparatus Circuit board processing method and apparatus |
DE102005046628A1 (en) * | 2005-09-29 | 2007-04-05 | Robert Bosch Gmbh | Process for coating metal component surface of valve device for controlling fluid volume stream to provide corrosion protection useful for protecting injector components against oxidation and rusting |
JP4817291B2 (en) * | 2005-10-25 | 2011-11-16 | Okiセミコンダクタ株式会社 | Manufacturing method of semiconductor wafer |
US7969548B2 (en) * | 2006-05-22 | 2011-06-28 | Asml Netherlands B.V. | Lithographic apparatus and lithographic apparatus cleaning method |
CN100401470C (en) * | 2006-06-02 | 2008-07-09 | 河北工业大学 | Method for controlling and removing fog-shaped micro-defect of silicon gas-phase epitaxial layer |
TWI370184B (en) * | 2006-09-06 | 2012-08-11 | Sumco Corp | Epitaxial wafer and method of producing same |
CN101152651B (en) * | 2006-09-28 | 2010-11-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for cleaning surface of ceramic parts |
KR100846271B1 (en) * | 2006-12-29 | 2008-07-16 | 주식회사 실트론 | Method for cleaning silicon wafer |
JP2008301699A (en) * | 2007-05-31 | 2008-12-11 | General Electric Co <Ge> | Method of cleaning generator coil |
JP5029539B2 (en) * | 2007-09-04 | 2012-09-19 | 三菱マテリアル株式会社 | Method for cleaning polycrystalline silicon and method for producing polycrystalline silicon |
KR101106582B1 (en) * | 2007-12-07 | 2012-01-19 | 가부시키가이샤 사무코 | Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer |
CN101656193B (en) * | 2008-08-21 | 2011-09-28 | 北京有色金属研究总院 | Technique for processing silicon chip |
JP5461810B2 (en) * | 2008-10-03 | 2014-04-02 | Sumco Techxiv株式会社 | Semiconductor wafer cleaning method |
KR101112988B1 (en) | 2008-10-03 | 2012-02-24 | 사무코 테크시부 가부시키가이샤 | Method of cleaning semiconductor wafer and semiconductor wafer |
TWI402137B (en) * | 2008-12-10 | 2013-07-21 | Lam Res Corp | A dual function electrode platen and a process for polishing a silicon electrode utilizing a polishing turntable and a dual function electrode platen |
JP2010226089A (en) * | 2009-01-14 | 2010-10-07 | Rohm & Haas Electronic Materials Llc | Method of cleaning semiconductor wafers |
IN2012DN02167A (en) * | 2009-09-11 | 2015-08-21 | First Solar Inc | |
FR2950733B1 (en) * | 2009-09-25 | 2012-10-26 | Commissariat Energie Atomique | METHOD OF ULTRASOUND PLANARIZATION OF A SUBSTRATE WHOSE SURFACE HAS BEEN RELEASED BY FRACTURE OF A FRAGILIZED BURED LAYER |
CN101817006A (en) * | 2010-03-22 | 2010-09-01 | 浙江矽盛电子有限公司 | Method for cleaning surface of solar silicon wafer |
CN102468152B (en) * | 2010-11-01 | 2013-12-04 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method of gate medium layer and transistor |
CN102179390B (en) * | 2010-11-25 | 2013-05-08 | 西安北方捷瑞光电科技有限公司 | Method for cleaning ultra-smooth surface |
CN102528646A (en) * | 2010-12-31 | 2012-07-04 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor grinding method |
CN102218410A (en) * | 2011-04-19 | 2011-10-19 | 浙江露笑光电有限公司 | Method for cleaning polished sapphire |
CN102412173B (en) * | 2011-11-01 | 2013-10-16 | 沈利军 | Cut/ground silicon wafer surface cleaning apparatus |
CN103170467B (en) * | 2011-12-23 | 2016-02-10 | 浙江昱辉阳光能源有限公司 | Ingot casting cycle stock cleaning method |
CN102744230A (en) * | 2012-07-26 | 2012-10-24 | 浙江矽盛电子有限公司 | Cleaning method for dirty and stuck solar silicon chip |
CN102832223B (en) * | 2012-09-06 | 2015-07-08 | 豪威科技(上海)有限公司 | Wafer thinning method |
CN103769383B (en) * | 2012-10-23 | 2016-05-04 | 宿迁宇龙光电科技有限公司 | A kind of cleaning method of silicon raw material |
US9828574B2 (en) | 2015-01-13 | 2017-11-28 | Cabot Microelectronics Corporation | Cleaning composition and method for cleaning semiconductor wafers after CMP |
CN105047538A (en) * | 2015-07-31 | 2015-11-11 | 江苏奥能光电科技有限公司 | Silicon wafer cleaning method and cleaning device |
CN106783527A (en) * | 2015-11-23 | 2017-05-31 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor wafer |
CN105810563A (en) * | 2016-05-31 | 2016-07-27 | 浙江晶科能源有限公司 | Method of washing solar cell silicon wafers |
JP6686955B2 (en) * | 2017-03-29 | 2020-04-22 | 信越半導体株式会社 | Semiconductor wafer cleaning method |
CN109326500A (en) * | 2017-07-31 | 2019-02-12 | 上海新昇半导体科技有限公司 | A kind of cleaning method of semiconductor crystal wafer |
CN107855936A (en) * | 2017-10-31 | 2018-03-30 | 天津中环领先材料技术有限公司 | A kind of cleaning method of zone-melting silicon polished wafer polissoir |
CN112992654A (en) * | 2021-02-07 | 2021-06-18 | 西安奕斯伟硅片技术有限公司 | Polishing method and cleaning equipment for reducing metal content of silicon wafer body |
CN114247685B (en) * | 2021-12-17 | 2022-12-20 | 张家港声芯电子科技有限公司 | Chip cleaning device and cleaning method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06291099A (en) * | 1993-03-31 | 1994-10-18 | Sumitomo Sitix Corp | Cleaning method of silicon wafer |
DE19525521A1 (en) * | 1994-07-15 | 1996-03-21 | Ontrak Systems Inc | Process for cleaning substrates |
JPH097991A (en) * | 1995-06-14 | 1997-01-10 | Mitsubishi Materials Shilicon Corp | Si wafer washing method |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4116714A (en) * | 1977-08-15 | 1978-09-26 | International Business Machines Corporation | Post-polishing semiconductor surface cleaning process |
US4261791A (en) * | 1979-09-25 | 1981-04-14 | Rca Corporation | Two step method of cleaning silicon wafers |
DE3738651A1 (en) * | 1987-11-13 | 1989-05-24 | Wacker Chemitronic | METHOD FOR THE HYDROPHILIZING AND / OR REMOVAL OF SURFACE TREATMENT OF SILICONE WINDOWS |
US4964919A (en) * | 1988-12-27 | 1990-10-23 | Nalco Chemical Company | Cleaning of silicon wafers with an aqueous solution of KOH and a nitrogen-containing compound |
US5129955A (en) * | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
DE4002327A1 (en) * | 1990-01-26 | 1991-08-01 | Wacker Chemitronic | METHOD FOR THE WET-CHEMICAL TREATMENT OF SEMICONDUCTOR SURFACES AND SOLUTION FOR ITS IMPLEMENTATION |
US5078801A (en) * | 1990-08-14 | 1992-01-07 | Intel Corporation | Post-polish cleaning of oxidized substrates by reverse colloidation |
JPH04107922A (en) * | 1990-08-29 | 1992-04-09 | Fujitsu Ltd | Semiconductor cleaning liquid and cleaning method therewith |
EP0496605B1 (en) * | 1991-01-24 | 2001-08-01 | Wako Pure Chemical Industries Ltd | Surface treating solutions for semiconductors |
US5308400A (en) * | 1992-09-02 | 1994-05-03 | United Microelectronics Corporation | Room temperature wafer cleaning process |
JP3341033B2 (en) * | 1993-06-22 | 2002-11-05 | 忠弘 大見 | Rotating chemical solution cleaning method and cleaning device |
US5464480A (en) * | 1993-07-16 | 1995-11-07 | Legacy Systems, Inc. | Process and apparatus for the treatment of semiconductor wafers in a fluid |
AU7221294A (en) * | 1993-07-30 | 1995-02-28 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
JP3338134B2 (en) * | 1993-08-02 | 2002-10-28 | 株式会社東芝 | Semiconductor wafer processing method |
JP2586304B2 (en) * | 1993-09-21 | 1997-02-26 | 日本電気株式会社 | Semiconductor substrate cleaning solution and cleaning method |
US5340437A (en) * | 1993-10-08 | 1994-08-23 | Memc Electronic Materials, Inc. | Process and apparatus for etching semiconductor wafers |
JP2857042B2 (en) * | 1993-10-19 | 1999-02-10 | 新日本製鐵株式会社 | Cleaning liquid for silicon semiconductor and silicon oxide |
TW274630B (en) * | 1994-01-28 | 1996-04-21 | Wako Zunyaku Kogyo Kk | |
JP2893676B2 (en) * | 1994-05-19 | 1999-05-24 | 信越半導体株式会社 | HF cleaning method for silicon wafer |
US5498293A (en) * | 1994-06-23 | 1996-03-12 | Mallinckrodt Baker, Inc. | Cleaning wafer substrates of metal contamination while maintaining wafer smoothness |
US5637151A (en) * | 1994-06-27 | 1997-06-10 | Siemens Components, Inc. | Method for reducing metal contamination of silicon wafers during semiconductor manufacturing |
US5505785A (en) * | 1994-07-18 | 1996-04-09 | Ferrell; Gary W. | Method and apparatus for cleaning integrated circuit wafers |
JP2760418B2 (en) * | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | Semiconductor wafer cleaning solution and method for cleaning semiconductor wafer using the same |
US5516730A (en) * | 1994-08-26 | 1996-05-14 | Memc Electronic Materials, Inc. | Pre-thermal treatment cleaning process of wafers |
JP2914555B2 (en) * | 1994-08-30 | 1999-07-05 | 信越半導体株式会社 | Cleaning method for semiconductor silicon wafer |
JP3119289B2 (en) * | 1994-10-21 | 2000-12-18 | 信越半導体株式会社 | Semiconductor wafer cleaning method |
US5662769A (en) * | 1995-02-21 | 1997-09-02 | Advanced Micro Devices, Inc. | Chemical solutions for removing metal-compound contaminants from wafers after CMP and the method of wafer cleaning |
US5681398A (en) * | 1995-03-17 | 1997-10-28 | Purex Co., Ltd. | Silicone wafer cleaning method |
US5593505A (en) * | 1995-04-19 | 1997-01-14 | Memc Electronic Materials, Inc. | Method for cleaning semiconductor wafers with sonic energy and passing through a gas-liquid-interface |
US5704987A (en) * | 1996-01-19 | 1998-01-06 | International Business Machines Corporation | Process for removing residue from a semiconductor wafer after chemical-mechanical polishing |
-
1997
- 1997-12-12 US US08/990,123 patent/US5837662A/en not_active Expired - Lifetime
-
1998
- 1998-12-01 WO PCT/US1998/025440 patent/WO1999031724A1/en not_active Application Discontinuation
- 1998-12-01 CN CN98812108A patent/CN1281588A/en active Pending
- 1998-12-01 EP EP98960589A patent/EP1044467A1/en not_active Withdrawn
- 1998-12-01 JP JP2000539523A patent/JP2002509355A/en not_active Withdrawn
- 1998-12-01 KR KR1020007006302A patent/KR20010032957A/en not_active Application Discontinuation
- 1998-12-10 MY MYPI98005573A patent/MY133080A/en unknown
- 1998-12-10 TW TW087120481A patent/TW419399B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06291099A (en) * | 1993-03-31 | 1994-10-18 | Sumitomo Sitix Corp | Cleaning method of silicon wafer |
DE19525521A1 (en) * | 1994-07-15 | 1996-03-21 | Ontrak Systems Inc | Process for cleaning substrates |
JPH097991A (en) * | 1995-06-14 | 1997-01-10 | Mitsubishi Materials Shilicon Corp | Si wafer washing method |
Non-Patent Citations (3)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 095, no. 001 28 February 1995 (1995-02-28) * |
PATENT ABSTRACTS OF JAPAN vol. 097, no. 005 30 May 1997 (1997-05-30) * |
TATSUHIKO ISAGAWA ET AL: "ULTRA CLEAN SURFACE PREPARATION USING OZONIZED ULTRAPURE WATER", INTERNATIONAL CONFERENCE ON SOLID STATE DEVICES AND MATERIALS, 1 August 1992 (1992-08-01), pages 193 - 195, XP000312196 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102978711A (en) * | 2012-12-12 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for removing oxide film on edge of silicon wafer by using low-temperature HF etching solution |
Also Published As
Publication number | Publication date |
---|---|
JP2002509355A (en) | 2002-03-26 |
CN1281588A (en) | 2001-01-24 |
EP1044467A1 (en) | 2000-10-18 |
MY133080A (en) | 2007-10-31 |
TW419399B (en) | 2001-01-21 |
KR20010032957A (en) | 2001-04-25 |
US5837662A (en) | 1998-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5837662A (en) | Post-lapping cleaning process for silicon wafers | |
US6230720B1 (en) | Single-operation method of cleaning semiconductors after final polishing | |
JP2007165935A (en) | Method of removing metals in scrubber | |
EP0718873A2 (en) | Cleaning process for hydrophobic silicon wafers | |
US5964953A (en) | Post-etching alkaline treatment process | |
WO1996021942A1 (en) | Method of cleaning substrates | |
JPH08100195A (en) | Agent and method for cleaning semiconductor wafer | |
JP4482844B2 (en) | Wafer cleaning method | |
US6530381B1 (en) | Process for the wet-chemical surface treatment of a semiconductor wafer | |
JP4752117B2 (en) | Method for removing particles on a semiconductor wafer | |
JP2000138198A (en) | Method for cleaning of semiconductor substrate | |
WO2021220590A1 (en) | Semiconductor wafer cleaning method | |
JP2002100599A (en) | Washing method for silicon wafer | |
EP1132951A1 (en) | Process of cleaning silicon prior to formation of the gate oxide | |
JPH05109683A (en) | Removal of metallic impurity in semiconductor silicon wafer cleaning fluid | |
JP4026384B2 (en) | Semiconductor substrate cleaning method | |
JP2001326209A (en) | Method for treating surface of silicon substrate | |
EP1250712A2 (en) | Process and apparatus for cleaning silicon wafers | |
JP2001068444A (en) | Semiconductor substrate processing liquid suppressing adsorption of metal thereto, preparing method for processing liquid, and processing method therefor using the same | |
JP2000049132A (en) | Method of cleaning semiconductor substrate | |
JPH11243073A (en) | Method for keeping silicon wafer in liquid | |
EP0818809A2 (en) | Method of washing semiconductor wafers | |
JP2000049133A (en) | Method of cleaning semiconductor substrate | |
JPH1116867A (en) | Method and equipment for cleaning | |
JPH11274129A (en) | Cleaning of semiconductor substrate |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 98812108.5 Country of ref document: CN |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
ENP | Entry into the national phase |
Ref document number: 2000 539523 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020007006302 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1998960589 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1998960589 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020007006302 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1020007006302 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1998960589 Country of ref document: EP |