WO1999038202A1 - Deposition of a siloxane containing polymer - Google Patents

Deposition of a siloxane containing polymer Download PDF

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Publication number
WO1999038202A1
WO1999038202A1 PCT/GB1999/000191 GB9900191W WO9938202A1 WO 1999038202 A1 WO1999038202 A1 WO 1999038202A1 GB 9900191 W GB9900191 W GB 9900191W WO 9938202 A1 WO9938202 A1 WO 9938202A1
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WO
WIPO (PCT)
Prior art keywords
chamber
compound
silicon
containing compound
substance
Prior art date
Application number
PCT/GB1999/000191
Other languages
French (fr)
Inventor
Steven Carter
Christine Janet Shearer
Original Assignee
Trikon Equipments Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Trikon Equipments Limited filed Critical Trikon Equipments Limited
Priority to GB0010337A priority Critical patent/GB2346898B/en
Priority to US09/582,859 priority patent/US6475564B1/en
Priority to JP2000529003A priority patent/JP2002502114A/en
Priority to DE19982177T priority patent/DE19982177T1/en
Priority to KR1020007004750A priority patent/KR100637560B1/en
Publication of WO1999038202A1 publication Critical patent/WO1999038202A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds

Definitions

  • This invention relates to a method and apparatus for treating a substrate, such as a semiconductor wafer and, in particular, but not exclusively, to a method and apparatus for providing an increase in deposition rate of a high grade insulation layer.
  • a low dielectric constant (known as low k) may also be provided by the method and apparatus of the present invention.
  • a planarisation technique is described in which a liquid short -chain polymer is formed on a semiconductor wafer by reacting silane (SiH 4 ) or a higher silane with hydrogen peroxide (H 2 0 2 ) .
  • the earlier co-pending Patent Application PCT/GB97/02240 discloses a method and apparatus for providing a low dielectric constant in a planarisation operation.
  • the method disclosed utilises an organosilane compound and a compound containing peroxide bonding to provide a short-chain polymer as a deposition layer on a semiconductor substrate. It has been found that the reactants used in prior art processes provide very low deposition rates of the resulting polymer layer on the semiconductor substrate. For example, investigations into the reaction of phenylsilane and H 2 0 2 yielded low deposition rates of the order of 600 A/min.
  • the main purpose of the present invention is to put down a high grade insulation layer as rapidly as possible, preferably without having a detrimental effect on the low dielectric constant of the insulator, and even improving the dielectric constant.
  • a method of treating a substrate comprises positioning the substrate in a chamber, introducing into the chamber in the gaseous or vapour state a silicon-containing compound, a further compound containing peroxide bonding, and a substance which associates readily with the compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound and the associating substance to provide on the substrate an insulating layer.
  • the associating substance promotes the initiation between the compound containing peroxide bonding and the silicon-containing compound.
  • the further compound, and the associating substance react with each other in the formation of the insulating layer.
  • the substance which associates readily with the compound containing peroxide bonding is preferably an oxidising agent, for example oxygen, ozone or tetraethoxysilane (TEOS) .
  • TEOS tetraethoxysilane
  • any material soluble in the compound containing peroxide bonding is appropriate, for example carbon monoxide or carbon dioxide.
  • the most preferred oxidising agent is oxygen.
  • the reaction which occurs is a chemical vapour deposition process and does not require an additional plasma, although such a plasma (for example a weakly ionised plasma) may, if required, be used within the process chamber.
  • the reactants are preferably capable of reacting spontaneously.
  • the reaction is thought to be a surface reaction.
  • the silicon-containing compound may be an organosilane, for example one of the general formula C x H y -Si n H a , or one of the general formula (C x H y ) z Si n H a , where x,y,z, n and a are any suitable values, for example integers..
  • the silicon containing compound is preferably of the general formula R- SiH 3 .
  • R is a methyl, ethyl, phenyl, or vinyl group and it is particularly preferred that R is a phenyl or methyl group.
  • the silicon-containing compound may be a silane (for example silane itself) or a higher silane.
  • a further alternative is dimethylsilane .
  • the silicon-containing compound is preferably not TEOS or other organometallic compound.
  • the compound containing peroxide bonding is preferably hydrogen peroxide .
  • the method may further comprise the step of introducing an additional gas, for example nitrogen, into the chamber.
  • an additional gas for example nitrogen
  • the associating substance can be introduced in any way.
  • the associating substance may be pre-mixed with the compound containing peroxide bonding or the silicon- containing compound prior to introduction into the chamber, although it has been observed that the deposition rate is particularly increased if the associating substance is pre- mixed with the compound containing peroxide bonding.
  • the associating substance may be introduced into the chamber as a separate component .
  • R is a methyl group
  • the deposition rate is increased to about 1.1 ⁇ m/min.
  • oxygen is used as the associating substance the deposition rate was increased from about 8000 A/min which was the rate in the case in which no oxygen was used.
  • R is a phenyl group the deposition rate is increased from about 600 A/min to 2700 A/min.
  • oxygen is used as the associating substance, the deposition rate when a silane or higher silane is used is increased from about 9000 A/min to about 1.2 ⁇ m/min.
  • the addition of the associating substance, in particular oxygen leads to a slight reduction in the dielectric constant of the film formed on the substrate, typically from 3.2 to 2.8.
  • a particularly preferred flow rate of the silicon- containing compound into the chamber is between 20 and 145 Seem (3.4 x 10" 2 to 0.24 Pa.m 3 /s), even more preferably about 45 Seem (7.6 x 10 "2 Pa.m 3 /s) .
  • the flow rate of the compound containing peroxide bonding into the chamber is preferably between 0.2 and 1.0 g/min and is even more preferably about 0.22 g/min.
  • the flow rate of the associating substance into the chamber is preferably up to 50 Seem (8.4 x 10 "2 Pa.m 3 /s) and even more preferably is about 10 Seem (1.7 x 10" 2 Pa.m 3 /s) .
  • any suitable pressure in the chamber can be used, it has been found that appropriate pressures are below atmospheric pressure, for example in the range of 200 to 5000 mT, preferably about 1000 mT.
  • its flow rate into the chamber is preferably between 50 and 1000 Seem (8.4 x 10 "2 to 1.7 Pa.m 3 /s), even more preferably about 80 Seem (0.14 Pa.m 3 /s).
  • the units Seem (Standard Cubic Centimetres per Minute) are at standard temperature and pressure .
  • the method may, if required, comprise the further step of removing water and/or OH from the layer formed from the short-chain polymer. Furthermore, the method may further comprise the step of forming or depositing an underlayer or a base layer prior to the deposition of the polymer layer. The method may further comprise the step of depositing or forming a capping layer on the surface of the formed layer and this layer is preferably applied in a PECVD process.
  • an apparatus for implementing the above method which comprises means for introducing the components into the chamber and platen means for supporting the substrate.
  • the apparatus may comprise a Chemical Vapour Deposition (CVD) or Plasma Enhanced Vapour Deposition process (PECVD) chamber.
  • CVD Chemical Vapour Deposition
  • PECVD Plasma Enhanced Vapour Deposition process
  • Figure 1 is a schematic view of an apparatus for performing the treatment method.
  • the apparatus 1 includes a chamber 2 having a duplex shower head 3 and a wafer support
  • the shower head 3 is connected to RF source 6 to form one electrode while the support 4 is earthed and forms another electrode.
  • the RF source 6 could be connected to the support 4 and the shower head 3 earthed.
  • the shower head 3 is connected by respective pipes 7 and 8 to a source of 0 2 and H 2 0 2 on the one hand and phenylsilane
  • the apparatus is arranged to deposit a short chain polymer on a semiconductor wafer or other substance This may also provide planarisation either locally or globally, or "gap filling".
  • the polymer is formed by introducing the components into the chamber, together with a carrier gas, for example nitrogen, if required, and reacting them within the chamber.
  • a carrier gas for example nitrogen
  • the reaction may occur spontaneously or may require initiation, for example from an external energy source.
  • the nitrogen may be needed to improve the process due to the small flow rates of the other components, and it may form part of the process.
  • the flow of the reactants is maintained at a desired level and they are removed from the chamber via outlet 9.
  • the resultant polymer is deposited on the wafer.
  • the 0 2 is being associated with the H 2 0 2 promoting the reaction between H 2 0 2 and C 6 H 8 Si.
  • the reaction may take place at the wafer surface.
  • 0 2 has been found to increase the deposition rate of a process in which the silicon containing compound as a silane or higher silane from about 9000 A/min to about 1.2 ⁇ m/min, and of a process in which MeSiH 3 is used from approximately 8000 A/min to about 1.1 ⁇ m/min .

Abstract

There is disclosed a method of treating a substrate, which method comprises positioning the substrate in a chamber (2), introducing into the chamber in the gaseous or vapour state a silicon-containing compound, a further compound containing peroxide bonding, and a substance which associates readily the compound containing peroxide bonding, the method further comprising the step of reacting the silicon-containing compound with the further compound and the soluble substance to provide on the substrate an insulating layer. Also disclosed is an apparatus for implementing the method.

Description

DEPOSITION OF A SILOXANE CONTAINING POLYMER
This invention relates to a method and apparatus for treating a substrate, such as a semiconductor wafer and, in particular, but not exclusively, to a method and apparatus for providing an increase in deposition rate of a high grade insulation layer. In addition, a low dielectric constant (known as low k) may also be provided by the method and apparatus of the present invention. In the earlier Patent Application O94/01885, the contents of which are incorporated herein by reference, a planarisation technique is described in which a liquid short -chain polymer is formed on a semiconductor wafer by reacting silane (SiH4) or a higher silane with hydrogen peroxide (H202) . In addition, the earlier co-pending Patent Application PCT/GB97/02240 discloses a method and apparatus for providing a low dielectric constant in a planarisation operation. The method disclosed utilises an organosilane compound and a compound containing peroxide bonding to provide a short-chain polymer as a deposition layer on a semiconductor substrate. It has been found that the reactants used in prior art processes provide very low deposition rates of the resulting polymer layer on the semiconductor substrate. For example, investigations into the reaction of phenylsilane and H202 yielded low deposition rates of the order of 600 A/min.
The main purpose of the present invention is to put down a high grade insulation layer as rapidly as possible, preferably without having a detrimental effect on the low dielectric constant of the insulator, and even improving the dielectric constant.
We have found that it is possible to increase significantly the deposition rates whilst maintaining other desirable properties, including a low dielectric constant, thereby improving the overall process of the deposition.
According to a first aspect of the present invention there is provided a method of treating a substrate, which method comprises positioning the substrate in a chamber, introducing into the chamber in the gaseous or vapour state a silicon-containing compound, a further compound containing peroxide bonding, and a substance which associates readily with the compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound and the associating substance to provide on the substrate an insulating layer.
Whilst the applicant is not to be restricted hereby, it is thought that the associating substance promotes the initiation between the compound containing peroxide bonding and the silicon-containing compound. Thus, the further compound, and the associating substance react with each other in the formation of the insulating layer.
The substance which associates readily with the compound containing peroxide bonding is preferably an oxidising agent, for example oxygen, ozone or tetraethoxysilane (TEOS) . However, any material soluble in the compound containing peroxide bonding is appropriate, for example carbon monoxide or carbon dioxide. The most preferred oxidising agent is oxygen.
The reaction which occurs is a chemical vapour deposition process and does not require an additional plasma, although such a plasma (for example a weakly ionised plasma) may, if required, be used within the process chamber. Thus, the reactants are preferably capable of reacting spontaneously. The reaction is thought to be a surface reaction. The silicon-containing compound may be an organosilane, for example one of the general formula CxHy-SinHa, or one of the general formula (CxHy) zSinHa, where x,y,z, n and a are any suitable values, for example integers.. The silicon containing compound is preferably of the general formula R- SiH3. Preferably, R is a methyl, ethyl, phenyl, or vinyl group and it is particularly preferred that R is a phenyl or methyl group. Alternatively, the silicon-containing compound may be a silane (for example silane itself) or a higher silane. A further alternative is dimethylsilane . The silicon-containing compound is preferably not TEOS or other organometallic compound.
Any suitable combination of the components may be used but as will be understood by those skilled in the art certain combinations and pressures may not be appropriate as they are explosive in the chamber.
The compound containing peroxide bonding is preferably hydrogen peroxide .
In an alternative embodiment, the method may further comprise the step of introducing an additional gas, for example nitrogen, into the chamber.
The associating substance can be introduced in any way. Thus, the associating substance may be pre-mixed with the compound containing peroxide bonding or the silicon- containing compound prior to introduction into the chamber, although it has been observed that the deposition rate is particularly increased if the associating substance is pre- mixed with the compound containing peroxide bonding. Alternatively, the associating substance may be introduced into the chamber as a separate component .
When R is a methyl group, eg. when methyl silane is the silicon-containing compound, the deposition rate is increased to about 1.1 μm/min. Thus when oxygen is used as the associating substance the deposition rate was increased from about 8000 A/min which was the rate in the case in which no oxygen was used. When R is a phenyl group the deposition rate is increased from about 600 A/min to 2700 A/min. Furthermore, when oxygen is used as the associating substance, the deposition rate when a silane or higher silane is used is increased from about 9000 A/min to about 1.2 μm/min. In addition, it has been found that the addition of the associating substance, in particular oxygen, leads to a slight reduction in the dielectric constant of the film formed on the substrate, typically from 3.2 to 2.8.
A particularly preferred flow rate of the silicon- containing compound into the chamber is between 20 and 145 Seem (3.4 x 10"2 to 0.24 Pa.m3/s), even more preferably about 45 Seem (7.6 x 10"2Pa.m3/s) . The flow rate of the compound containing peroxide bonding into the chamber is preferably between 0.2 and 1.0 g/min and is even more preferably about 0.22 g/min. The flow rate of the associating substance into the chamber is preferably up to 50 Seem (8.4 x 10"2Pa.m3/s) and even more preferably is about 10 Seem (1.7 x 10"2Pa.m3/s) . Above 20Sccm spontaneous momentary pressure bursts are observed indicating vigorous reactions and rates above 50 Seem may well therefore be unsafe in practice. Whilst any suitable pressure in the chamber can be used, it has been found that appropriate pressures are below atmospheric pressure, for example in the range of 200 to 5000 mT, preferably about 1000 mT. When an further gas is used, its flow rate into the chamber is preferably between 50 and 1000 Seem (8.4 x 10"2 to 1.7 Pa.m3/s), even more preferably about 80 Seem (0.14 Pa.m3/s). The units Seem (Standard Cubic Centimetres per Minute) are at standard temperature and pressure .
The method may, if required, comprise the further step of removing water and/or OH from the layer formed from the short-chain polymer. Furthermore, the method may further comprise the step of forming or depositing an underlayer or a base layer prior to the deposition of the polymer layer. The method may further comprise the step of depositing or forming a capping layer on the surface of the formed layer and this layer is preferably applied in a PECVD process.
According to a second aspect of the present invention there is provided an apparatus for implementing the above method which comprises means for introducing the components into the chamber and platen means for supporting the substrate. The apparatus may comprise a Chemical Vapour Deposition (CVD) or Plasma Enhanced Vapour Deposition process (PECVD) chamber.
Whilst the invention has been described above, it extends to any inventive combination of the features set out above or in the following description.
The invention will now be described, by way of example, with reference to the following example and the following drawing, and in which:
Figure 1 is a schematic view of an apparatus for performing the treatment method.
Referring to Figure 1, an apparatus for treating semiconductor wafers, or the like, is schematically illustrated at 1. The general construction of such an apparatus is well known in the art and therefore only the features which are relevant for the understanding of the invention are described. Thus, the apparatus 1 includes a chamber 2 having a duplex shower head 3 and a wafer support
4. The shower head 3 is connected to RF source 6 to form one electrode while the support 4 is earthed and forms another electrode. Alternatively, the RF source 6 could be connected to the support 4 and the shower head 3 earthed. The shower head 3 is connected by respective pipes 7 and 8 to a source of 02 and H202 on the one hand and phenylsilane
(C6H8Si) on the other hand.
In use, the apparatus is arranged to deposit a short chain polymer on a semiconductor wafer or other substance This may also provide planarisation either locally or globally, or "gap filling". The polymer is formed by introducing the components into the chamber, together with a carrier gas, for example nitrogen, if required, and reacting them within the chamber. The reaction may occur spontaneously or may require initiation, for example from an external energy source. The nitrogen may be needed to improve the process due to the small flow rates of the other components, and it may form part of the process. The flow of the reactants is maintained at a desired level and they are removed from the chamber via outlet 9. The resultant polymer is deposited on the wafer. As regards the mechanism involving oxygen, whilst the applicant is not to be restricted hereby, it is believed that the 02 is being associated with the H202 promoting the reaction between H202 and C6H8Si. The reaction may take place at the wafer surface.
Example
Investigations into the reaction of phenylsilane
(C6H8Si) and H202 yielded very low deposition rates (of the order of 600A/min) . In order to promote the reaction, a small amount of additional oxidant - 02 - was added to the process which proved successful in increasing the deposition rate to in excess of 2700A/min.
The process used for the investigations was:- preferred range investigated process
CsH8Si (Seem) 45 20 > 145
H202 (g/min) 0.22 0.2 > 1.0
N2 (Seem) 80 50 > 1000 o2 (Seem) 10 0 > 50
Pressure (mT) 1000 200 > 5000
As has already been mentioned it was found that, when the rate of 02 flow is increased above 20 Seem, an increasingly vigorous reaction occurred causing large fluctuations in chamber pressure .
Furthermore, the addition of 02 has been found to increase the deposition rate of a process in which the silicon containing compound as a silane or higher silane from about 9000 A/min to about 1.2μm/min, and of a process in which MeSiH3 is used from approximately 8000 A/min to about 1.1 μm/min .

Claims

Claims
1. A method of treating a substrate, which method comprises positioning the substrate in a chamber, introducing into the chamber in the gaseous or vapour state a silicon-containing compound, a further compound containing 'peroxide bonding, and a substance which associates readily with the compound containing peroxide bonding, and reacting the silicon-containing compound with the further compound and the associating substance to provide on the substrate a an insulating layer.
2. A method according to Claim 1, wherein the associating substance is an oxidising agent.
3. A method according to Claim 2, wherein the oxidising agent is selected from oxygen, ozone, or tetraethoxysilane .
4. A method according to Claim 3, wherein the oxidising agent is oxygen.
5. A method according to any preceding Claim, wherein the silicon-containing compound is an organosilane of the general formula CxHy-SinHa or (CxHy) zSinHa.
6. A method according to Claim 5, wherein the silicon- containing compound is of the general formula R-SiH3.
7. A method according to Claim 6 wherein R is a methyl, ethyl, phenyl or vinyl group.
8. A method according to Claim 7, wherein R is a phenyl or methyl group.
9. A method according to any one of Claims 1 to 4, wherein the silicon-containing compound is a silane or a higher silane .
10. A method according to any preceding Claim, wherein the compound containing peroxide bonding is hydrogen peroxide.
11. A method according to any preceding Claim, further comprising introducing an additional gas into the chamber.
12. A method according to Claim 11, wherein the additional gas is nitrogen.
13. A method according to any preceding Claim, wherein the associating substance is premixed with the compound containing peroxide bonding or the silicon-containing compound prior to introduction into the chamber.
14. A method according to any one of Claims 1 to 12, wherein the associating substance is introduced into the chamber as a separate component .
15. A method according to Claim 8, wherein, when R is a methyl group, the deposition rate is increased to about 1.1 ╬╝m/min.
16. A method according to Claim 8, wherein, when R is a Phenyl group, the deposition rate is increased to about 2700
A/min.
17. A method according to Claim 9, wherein the deposition rate is increased to about 1.2╬╝m/min.
18. A method according to any preceding Claim, wherein the flow rate of the silicon-containing compound into the chamber is between 20 and 145 Seem.
19. A method according to any preceding Claim, wherein the flow rate of the compound containing peroxide bonding into the chamber is between 0.2 and 1.0 g/min.
20. A method according to any preceding Claim, wherein the flow rate of the associating substance into the chamber is up to 50 Seem.
21. A method according to Claim 11 or 12, wherein the flow rate of the additional gas into the chamber is between 50 and 1000 Seem.
22. A method according to any preceding claim, wherein the pressure in the chamber is below atmospheric pressure.
23. A method substantially as hereinbefore described, with reference to, and as illustrated in, the accompanying example and drawing.
24. An apparatus for implementing the method of any preceding Claim, including means for introducing the components into the chamber and platen means for supporting the semiconductor substrate.
25. An apparatus according to Claim 24, comprising a CVD and/or a PECVD chamber.
26. An apparatus substantially as hereinbefore described with reference to, and as illustrated in, the accompanying drawing .
PCT/GB1999/000191 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer WO1999038202A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
GB0010337A GB2346898B (en) 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer
US09/582,859 US6475564B1 (en) 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer
JP2000529003A JP2002502114A (en) 1998-01-23 1999-01-20 Deposition of siloxane-containing polymers
DE19982177T DE19982177T1 (en) 1998-01-23 1999-01-20 Deposition of a polymer containing siloxane
KR1020007004750A KR100637560B1 (en) 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB9801359.2 1998-01-23
GBGB9801359.2A GB9801359D0 (en) 1998-01-23 1998-01-23 Methods and apparatus for treating a substrate

Related Child Applications (2)

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US09/582,859 A-371-Of-International US6475564B1 (en) 1998-01-23 1999-01-20 Deposition of a siloxane containing polymer
US10/235,505 Division US20030012877A1 (en) 1998-01-23 2002-09-06 Deposition of a siloxane containing polymer

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US6800571B2 (en) 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
EP1039521A3 (en) * 1999-03-22 2004-01-02 Lsi Logic Corporation Formation of improved low dielectric constant carbon-containing silicon oxide dielectric material by reaction of carbon-containing silane with oxidising agent in the presence of one or more reaction retardants
EP1100121A2 (en) * 1999-11-12 2001-05-16 Lsi Logic Corporation Process for forming low k silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant
EP1100121A3 (en) * 1999-11-12 2004-04-14 Lsi Logic Corporation Process for forming low K silicon oxide dielectric material while suppressing pressure spiking and inhibiting increase in dielectric constant
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US6583048B2 (en) 2001-01-17 2003-06-24 Air Products And Chemicals, Inc. Organosilicon precursors for interlayer dielectric films with low dielectric constants
CN1302152C (en) * 2001-03-19 2007-02-28 株式会社Ips Chemical vapor depositing apparatus
US6486082B1 (en) 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
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US6815373B2 (en) 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US8137764B2 (en) 2003-05-29 2012-03-20 Air Products And Chemicals, Inc. Mechanical enhancer additives for low dielectric films

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