WO1999049504A1 - Procede et systeme d'exposition par projection - Google Patents

Procede et systeme d'exposition par projection Download PDF

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Publication number
WO1999049504A1
WO1999049504A1 PCT/JP1999/001262 JP9901262W WO9949504A1 WO 1999049504 A1 WO1999049504 A1 WO 1999049504A1 JP 9901262 W JP9901262 W JP 9901262W WO 9949504 A1 WO9949504 A1 WO 9949504A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
projection exposure
projection
optical system
Prior art date
Application number
PCT/JP1999/001262
Other languages
English (en)
Japanese (ja)
Inventor
Yoshio Fukami
Nobutaka Magome
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to AU27479/99A priority Critical patent/AU2747999A/en
Publication of WO1999049504A1 publication Critical patent/WO1999049504A1/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Definitions

  • a mask pattern is formed on a photosensitive substrate in a lithographic process for manufacturing a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head.
  • a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, or a thin-film magnetic head.
  • the present invention relates to a projection exposure method and apparatus used for transfer, and more particularly to a projection exposure method and apparatus using an immersion method. Background art
  • an image of a reticle pattern as a mask is projected onto each shot area on a wafer (or a glass plate, etc.) coated with a resist as a photosensitive substrate via a projection optical system.
  • a transfer projection exposure device is used.
  • a step-and-repeat type reduction projection type exposure apparatus has been frequently used as a projection exposure apparatus.
  • a step-and-scan method in which exposure is performed by synchronously scanning a reticle and a wafer. Attention has been paid to a projection exposure apparatus of the type.
  • the resolution of the projection optical system provided in the projection exposure apparatus increases as the exposure wavelength used decreases and as the numerical aperture of the projection optical system increases. For this reason, with the miniaturization of integrated circuits, the exposure wavelength used in projection exposure apparatuses is becoming shorter year by year, and the numerical aperture of projection optical systems is also increasing.
  • the exposure wavelength currently mainstream is 248 nm for KrF excimer lasers, but 193 nm for shorter-wavelength ArF excimer lasers is being put into practical use.
  • the depth of focus (DOF) is as important as the resolution.
  • Resolution R and depth of focus (5 are each represented by the following equations.
  • Equation (1) and (2) it can be seen that when the exposure wavelength ⁇ is shortened and the numerical aperture ⁇ ⁇ ⁇ is increased to increase the resolution R, the depth of focus ⁇ 5 is reduced.
  • a projection exposure apparatus exposure is performed by aligning the surface of a wafer with an image plane of a projection optical system by an autofocus method. To this end, it is desirable that the depth of focus ⁇ is wide to some extent. Therefore, proposals have been made to substantially increase the depth of focus, such as the phase shift reticle method, the modified illumination method, and the multilayer resist method.
  • the depth of focus is becoming narrower due to the shorter wavelength of the exposure light and the increase in the numerical aperture of the projection optical system.
  • research on even shorter exposure wavelengths has been studied. In this case, the depth of focus becomes too narrow, and the margin during the exposure operation may be insufficient. There is.
  • an immersion method has been proposed as a method of substantially shortening the exposure wavelength and increasing the depth of focus. This is because the space between the lower surface of the projection optical system and the wafer surface is filled with water or a liquid such as an organic solvent, and the wavelength of the exposure light in the liquid is lZn times that in air ( ⁇ is the refractive index of the liquid. (Approximately 1.2 to 1.6) to improve the resolution and increase the depth of focus to about ⁇ times.
  • this immersion method is simply applied to a step-and-repeat projection exposure apparatus, after exposing one shot area, when step-moving the wafer to the next shot area, Projection optics and wafer In this case, the liquid must be supplied again because the liquid comes out from the space between the two, and there is a disadvantage that it is difficult to recover the liquid. Also, if the immersion method is applied to a step-and-scan projection exposure apparatus, the exposure is performed while moving the wafer, so that the projection optical system and the wafer are not moved while the wafer is being moved. It is necessary that the liquid is filled between them.
  • the present invention provides a liquid between the projection optical system and the wafer stably even if the projection optical system and the wafer are relatively moved when the immersion method is applied. It is an object of the present invention to provide a projection exposure method that can be set. Further, the present invention provides a projection exposure apparatus capable of performing such a projection exposure method, an efficient manufacturing method of the projection exposure apparatus, and a method of manufacturing a high-performance device using such a projection exposure method. The purpose is also. Disclosure of the invention
  • a mask (R) is illuminated with an exposure beam, and a pattern of the mask (R) is transferred onto a substrate (W) via a projection optical system (PL).
  • PL projection optical system
  • the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W) The predetermined liquid (7) is caused to flow along the direction of movement of the substrate (W) so as to satisfy the condition (1).
  • the liquid immersion method is applied to fill the space between the tip of the projection optical system (PL) and the substrate (W) with the liquid.
  • the wavelength of the exposure light on the surface can be shortened to 1Zn times the wavelength in air (where n is the refractive index of the liquid), and the depth of focus is expanded about n times compared to in air.
  • the substrate is moved along a predetermined direction, the liquid flows along the moving direction of the substrate.
  • the space between the tip of the projection optical system and the surface of the substrate is filled with the liquid.
  • the foreign matter attached to the substrate can be washed away with the liquid.
  • the first projection exposure apparatus illuminates the mask (R) with the exposure beam, and transfers the pattern of the mask (R) onto the substrate (W) via the projection optical system (PL).
  • a substrate stage (9, 10) for holding and moving the substrate (W), and a tip of an optical element (4) on the substrate (W) side of the projection optical system (PL).
  • the substrate stage (9, 10) is driven to remove the substrate (W). When moving along the Jo Tokoro, and performs supply and recovery of the liquid (7).
  • the first projection exposure method of the present invention can be performed by using those pipes.
  • the pair of supply pipes (21a) and the discharge pipes (23a, 23b) are rotated substantially 180 ° so that a second pair of supply pipes (22 It is desirable to provide a) and pipes for discharge (24a, 24b).
  • the tip of the projection optical system (PL) and the substrate (W) are used by using the latter pair of pipes.
  • the liquid (7) can be more stably filled with the liquid surface.
  • the projection exposure apparatus converts the mask (R) and the substrate (W) into the projection light.
  • the predetermined direction is the scanning direction of the substrate (W) at the time of scanning exposure.
  • the liquid (7) flows between the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W). ),
  • the exposure can be performed with high accuracy and stability.
  • control system (14) for adjusting the supply amount and the recovery amount of the liquid (7) according to the moving speed of the substrate stage That is, for example, when the moving speed is high, the supply amount is increased, and when the moving speed is low, the supply amount is reduced, so that the tip of the projection optical system (PL) and the The space between the substrate and the surface of the substrate (W) can be kept constant.
  • the liquid (7) supplied to the surface of the substrate (W) is, for example, pure water or a fluorine-based inert liquid adjusted to a predetermined temperature.
  • pure water is easily available at, for example, a semiconductor manufacturing plant, and there is no environmental problem.
  • the temperature of the liquid (7) is adjusted, the temperature of the substrate surface can be adjusted, and thermal expansion of the substrate (W) due to heat generated during exposure can be prevented.
  • the liquid has a high transmittance to the exposure beam.
  • the method for manufacturing a projection exposure apparatus comprises an illumination system (1) for irradiating an exposure beam onto a mask (R), and a projection optical system (1) for transferring an image of a pattern of the mask onto a substrate (W).
  • PL the substrate stage (9, 10) for holding and moving the substrate (W), and the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL).
  • a liquid supply device (5) for supplying a predetermined liquid (7) along a predetermined direction via a supply pipe (21a) so as to fill the space between the substrate and the surface of the substrate (W);
  • the substrate (W) is connected to the supply pipe (21a) via the discharge pipe (23a, 23b) arranged so as to sandwich the exposure beam irradiation area (4) in the predetermined direction together with the supply pipe (21a).
  • a projection exposure apparatus is manufactured by assembling a liquid recovery device (6) for recovering the liquid (7) from the surface of the device with a predetermined positional relationship.
  • a first device manufacturing method is a device manufacturing method using the first projection exposure method according to the present invention, wherein a mask (R) is illuminated with an exposure beam, and the mask (R) is illuminated. ) Is transferred to the device substrate (W) via the projection optical system (PL) through the projection optical system (PL).
  • a predetermined direction In order to fill the gap between the tip of the optical element (4) on the substrate (W) side of the projection optical system (PL) and the surface of the substrate (W), along the moving direction of the substrate (W) A predetermined liquid (7) is allowed to flow, and a high-performance device can be manufactured by applying the immersion method.
  • a second projection exposure method is directed to a projection exposure method for illuminating a mask (R) with an exposure beam and exposing a substrate (W) with the exposure beam via a projection optical system (PL).
  • the liquid (7) flows so as to fill the space between the projection optical system and the substrate, and the direction in which the liquid flows varies according to the moving direction of the substrate.
  • the second projection exposure method of the present invention since the liquid between the projection optical system (PL) and the substrate (W) is filled with the liquid by applying the immersion method, the exposure light on the substrate surface is exposed. Can be shortened to 1Zn times the wavelength in air (n is the refractive index of the liquid), and the depth of focus is about n times wider than in air.
  • the direction in which the liquid flows in accordance with the direction of movement of the substrate even if the direction of movement of the substrate changes frequently, the distance between the projection optical system and the substrate is reduced. Can be filled with liquid.
  • the supply speed of the liquid (7) is divided into a first component in the moving direction of the substrate and a second component orthogonal to the moving direction, the first component is in the moving direction of the substrate (W).
  • the direction is opposite to the above, it is desirable to flow the liquid (7) so as to be smaller than a predetermined allowable value. This reduces the velocity component of the liquid in the direction opposite to the direction of movement of the substrate (W), so that the liquid can be supplied smoothly.
  • the liquid (7) flows in the same direction substantially along the direction of movement of the substrate (W).
  • the liquid (7) is caused to flow substantially along the stepping direction of the substrate (W). It is desirable.
  • the mask (R) and the substrate (W) are relatively moved with respect to the exposure beam, and the substrate is scanned and exposed with the exposure beam, and the substrate is scanned in the scanning direction during the scanning exposure. It is desirable to flow the liquid (7) approximately along.
  • the method for manufacturing a second device according to the present invention includes the second method according to the present invention.
  • the method includes a lithographic process including a step of transferring a device pattern onto a substrate (W) using a shadow exposure method.
  • a high-performance device can be manufactured by applying an immersion method.
  • a second projection exposure apparatus illuminates a mask (R) with an exposure beam and exposes the substrate (W) with the exposure beam via a projection optical system (PL).
  • a liquid supply device (5) for flowing the liquid (7) so as to fill the space between the projection optical system and the substrate, and changing the flowing direction of the liquid according to the moving direction of the substrate. is there.
  • the second projection exposure method of the present invention can be implemented, and even when the moving direction of the substrate changes frequently, The liquid can be filled between the projection optical system and the substrate.
  • a stage ′ system for moving the mask (R) and the substrate (W) relative to the exposure beam is further provided, and the liquid supply device (5) During the scanning exposure of the substrate, it is desirable to flow the liquid (7) substantially along the moving direction of the substrate.
  • a liquid recovery device (6) for recovering the liquid (7) supplied between the projection optical system (PL) and the substrate (W). It is desirable that the supply port (21a) of (5) and the recovery port (23a, 23b) of the liquid recovery device (6) are arranged with the irradiation area of the exposure beam interposed therebetween.
  • FIG. 1 is a diagram showing a schematic configuration of a projection exposure apparatus used in the first embodiment of the present invention.
  • Fig. 2 shows the lens 4 of the projection optical system PL in Fig. 1.
  • FIG. 6 is a diagram showing a positional relationship between a tip 4A of the X-axis and a discharge nozzle and an inflow nozzle for the X direction.
  • FIG. 3 is a diagram showing the positional relationship between the tip 4A of the lens 4 of the projection optical system PL in FIG. 1, and the discharge nozzle and the inflow nozzle that supply and recover the liquid from the Y direction.
  • FIG. 4 is an enlarged view of a main part showing how the liquid 7 is supplied and recovered between the lens 4 and the wafer W in FIG.
  • FIG. 5 is a front view showing the lower end of the projection optical system PLA of the projection exposure apparatus used in the second embodiment of the present invention, the liquid supply device 5, the liquid recovery device 6, and the like.
  • FIG. 6 is a diagram showing a positional relationship between the tip 32A of the lens 32 of the projection optical system PLA of FIG. 5 and the discharge nozzle and the inflow nozzle for the X direction.
  • FIG. 7 is a diagram showing the positional relationship between the tip 32A of the lens 32 of the projection optical system PLA in FIG. 5, and the discharge nozzle and the inflow nozzle that supply and recover the liquid from the Y direction.
  • the present invention is applied to a case where exposure is performed by a step-and-repeat projection exposure apparatus.
  • FIG. 1 shows a schematic configuration of the projection exposure apparatus of the present embodiment.
  • Exposure light IL composed of ultraviolet pulse light of wavelength 248 nm emitted from optical system 1 illuminates the pattern provided on reticle R.
  • the pattern of the reticle R is photolithographic at both sides (or one side on the wafer W side) through a telecentric projection optical system PL at a predetermined projection magnification] 3 (3 is, for example, 1/4, 1Z5, etc.). Is reduced and projected on the exposure area on the wafer W to which the is applied.
  • the exposure light IL includes ArF excimer laser light (wavelength 1933 nm), F 2 Laser light (wavelength: 157 nm) or i-line from a mercury lamp (wavelength: 365 nm) may be used.
  • the Z axis is taken parallel to the optical axis AX of the projection optical system PL
  • the Y axis is taken perpendicular to the plane of FIG. 1 in a plane perpendicular to the Z axis
  • the X axis is taken parallel to the plane of FIG. Will be explained.
  • the reticle R is held on a reticle stage R ST, and the reticle stage R ST incorporates a mechanism for finely moving the reticle R in the X, Y, and rotation directions.
  • the two-dimensional position and rotation angle of reticle stage RST are measured in real time by a laser interferometer (not shown), and main control system 14 positions reticle R based on the measured values.
  • the wafer W is fixed via a wafer holder (not shown) on a Z stage 9 for controlling a focus position (a position in the Z direction) and an inclination angle of the wafer W.
  • the Z stage 9 is fixed on an XY stage 10 that moves along an XY plane substantially parallel to the image plane of the projection optical system PL, and the XY stage 10 is mounted on a base 11.
  • the Z stage 9 controls the focus position (position in the Z direction) and the tilt angle of the wafer W to adjust the surface on the wafer W to the image plane of the projection optical system PL by an autofocus method and an autoleveling method.
  • the XY stage 10 positions the wafer W in the X and Y directions.
  • the two-dimensional position and rotation angle of the Z stage 9 are measured in real time by the laser interferometer 13 as the position of the movable mirror 12.
  • Control information is sent from the main control system 14 to the wafer stage drive system 15 based on the measurement result, and the wafer stage drive system 15 controls the operation of the Z stage 9 and the XY stage 10 based on the control information. .
  • each shot area on the wafer W is sequentially moved to the exposure position, and the operation of exposing the pattern image of the reticle R is repeated in a step-and-repeat manner.
  • the exposure wavelength is substantially shortened to improve the resolution and Apply the immersion method to increase the depth of focus substantially. For this reason, at least while the transfer image of the reticle R is being transferred onto the wafer W, the surface of the wafer W and the tip surface (lower surface) of the lens 4 on the wafer side of the projection optical system PL And a predetermined liquid 7 is filled.
  • the projection optical system PL has a lens barrel 3 that houses another optical system and a lens 4 thereof, and is configured so that the liquid 7 contacts only the lens 4. Thus, corrosion of the lens barrel 3 made of metal is prevented.
  • the projection optical system PL is composed of a plurality of optical elements including a lens 4, and the lens 4 is fixed to the lowermost part of the lens barrel 3 so as to be detachable (exchangeable).
  • the lens is the optical element closest to the wafer W, that is, the optical element that comes into contact with the liquid 7, but the optical element is not limited to the lens, and the optical characteristics of the projection optical system PL, such as aberration (spherical)
  • An optical plate (parallel plane plate or the like) used for adjusting aberration, coma aberration, or the like may be used.
  • the optical element that comes into contact with the liquid 7 since the surface of the optical element that comes into contact with the liquid 7 due to scattered particles generated from the registry due to exposure of the exposure light or the attachment of impurities in the liquid 7 becomes dirty, the optical element is periodically replaced. There is a need. However, if the optical element that comes into contact with the liquid 7 is a lens, the cost of replacement parts is high and the time required for replacement is long, leading to an increase in maintenance cost (running cost) and a decrease in throughput. . Therefore, the optical element that comes into contact with the liquid 7 may be, for example, a parallel flat plate that is less expensive than the lens 4.
  • the transmittance of the projection optical system PL during transportation, assembly, adjustment, and the like of the projection exposure apparatus Even if a substance (for example, a silicon-based organic substance) that reduces the illuminance of the exposure light and the uniformity of the illuminance distribution on the wafer W adheres to the parallel flat plate, the parallel flat plate may be provided immediately before the liquid 7 is supplied. It is only necessary to replace the face plate, and there is an advantage that the replacement cost is lower than when the optical element that comes into contact with the liquid 7 is a lens. In this example, pure water is used as the liquid 7, for example.
  • pure water is used as the liquid 7, for example.
  • Pure water has the advantage that it can be easily obtained in large quantities at semiconductor manufacturing plants and the like, and that there is no adverse effect on the photoresist on the wafer, optical lenses, and the like.
  • pure water has no adverse effect on the environment and has an extremely low impurity content, so that it can be expected to have an effect of cleaning the surface of the wafer and the surface of the lens 4.
  • the refractive index n of pure water (water) with respect to exposure light having a wavelength of about 250 nm is approximately 1.4
  • the wavelength of KrF excimer laser light, 248 nm The wavelength is shortened to lZn, that is, about 1777 nm, and a high resolution is obtained.
  • the depth of focus is expanded about n times, that is, about 1.4 times as compared with that in the air, when it is sufficient to secure the same depth of focus as that used in the air, the projection optical system
  • the numerical aperture of the PL can be further increased, and the resolution is improved in this respect as well.
  • the liquid 7 is supplied to the wafer W through a predetermined discharge nozzle or the like in a temperature-controlled manner by a liquid supply device 5 including a liquid tank, a pressure pump, a temperature control device, and the like.
  • the liquid is collected from the wafer W through a predetermined inflow nozzle or the like by a liquid recovery device 6 including a tank and a suction pump.
  • the temperature of the liquid 7 is set to, for example, about the same as the temperature in the chamber in which the projection exposure apparatus of the present example is stored.
  • FIG. 2 shows the positional relationship between the tip 4A and the wafer W of the lens 4 of the projection optical system PL of FIG. 1 and two pairs of discharge nozzles and inflow nozzles that sandwich the tip 4A in the X direction.
  • the discharge nozzle 21a is arranged on the + X direction side of the tip 4A
  • the inflow nozzles 23a and 23b are arranged on the one X direction side.
  • the inflow nozzles 23a and 23b are arranged so as to open in a fan shape with respect to an axis passing through the center of the tip 4A and parallel to the X axis.
  • one pair of discharge nozzles 21a and inflow nozzles 23a and 23b are rotated by approximately 180 °, and another pair of discharge nozzles 22a and inflow nozzles 24a and 24a are arranged.
  • 4 b is arranged, the discharge nozzle 22 a is connected to the liquid supply device 5 via the supply pipe 22, and the inflow nozzles 24 a, 24 b are connected to the liquid recovery device 6 via the recovery pipe 24. It is connected.
  • FIG. 3 shows the positional relationship between the tip 4A of the lens 4 of the projection optical system PL of FIG. 1 and two pairs of discharge nozzles and inflow nozzles that sandwich the tip 4A in the Y direction.
  • discharge nozzles 2 ⁇ ⁇ , ⁇ inflow direction nozzles 29 a, 29 b are disposed on the + Y direction side of the tip 4 A, and discharge nozzle 27 a is connected to the supply pipe 27.
  • the inlet nozzles 29 a and 29 b are connected to the liquid recovery device 6 via the recovery pipe 29.
  • another pair of discharge nozzles 28a and inflow nozzles 30a, 3a are arranged by rotating one pair of discharge nozzles 27a and inflow nozzles 29a, 29b by approximately 180 °. 0b is arranged, the discharge nozzle 28a is connected to the liquid supply device 5 through the supply pipe 28, and the inflow nozzles 30a and 30b are connected to the liquid recovery device 6 through the recovery pipe 30.
  • the liquid supply device 5 supplies a temperature-controlled liquid between the front end 4 A of the lens 4 and the wafer W through at least one of the supply pipes 21, 22, 27, 28.
  • the liquid recovery device 6 recovers the liquid via at least one of the recovery tubes 23, 24, 29, and 30.
  • the liquid supply device 5 is connected via the supply pipe 21 and the discharge nozzle 21 a.
  • the liquid 7 is supplied between the tip 4 A of the lens 4 and the wafer W.
  • the liquid recovery device 6 recovers the liquid 7 from above the wafer W via the recovery pipe 23 and the inflow nozzles 23a and 23b.
  • the liquid 7 flows on the wafer W in the direction of the arrow 25B (the direction X), and the space between the wafer W and the lens 4 is stably filled with the liquid 7.
  • the liquid supply device 5 uses the supply pipe 22 and the discharge nozzle 22 a.
  • the liquid 7 is supplied between the tip 4A of the lens 4 and the wafer W, and the liquid recovery device 6 recovers the liquid 7 using the recovery pipe 24 and the inflow nozzles 24a and 24b.
  • the liquid 7 flows on the wafer W in the direction of arrow 26 B (+ X direction), and the space between the wafer W and the lens 4 is filled with the liquid 7.
  • the wafer W is moved in either the + X direction or the ⁇ X direction.
  • the space between the wafer W and the lens 4 can be stably filled with the liquid 7.
  • the liquid 7 flows on the wafer W, even if foreign matter (including scattered particles from the resist) adheres to the wafer W, the foreign matter can be washed away by the liquid 7.
  • the liquid 7 is adjusted to a predetermined temperature by the liquid supply device 5, the temperature of the surface of the wafer W is adjusted, and the overlay accuracy and the like due to the thermal expansion of the wafer due to heat generated during exposure are adjusted. Drop can be prevented. Therefore, even if there is a time lag between the alignment and the exposure as in the EGA (Enhanced's Global Alignment) method, the thermal expansion of the wafer This can prevent the overlay accuracy from being reduced.
  • EGA Enhanced's Global Alignment
  • the liquid 7 flows in the same direction as the direction in which the wafer W is moved, the foreign matter or the liquid that has absorbed heat is deposited on the exposure area immediately below the tip 4 A of the lens 4. It can be collected without stagnation.
  • the liquid 7 is supplied and recovered from the Y direction.
  • the liquid supply device 5 is connected via the supply pipe 27 and the discharge nozzle 27a.
  • the liquid is supplied, and the liquid recovery unit 6 recovers the liquid using the recovery pipe 29 and the inlet nozzles 29a and 29b, and the liquid is collected on the exposure area immediately below the tip 4A of the lens 4.
  • liquid supply and recovery are performed using the supply pipe 28, the discharge nozzle 28a, the recovery pipe 30, and the inflow nozzles 30a, 30b.
  • the liquid flows in the + Y direction on the exposure area just below the tip 4A.
  • the position of the wafer W and the tip 4A of the lens 4 is The space can be filled with liquid 7.
  • a nozzle for supplying and recovering the liquid 7 from the X direction or the Y direction but also a nozzle for supplying and recovering the liquid 7 from an oblique direction may be provided.
  • FIG. 4 shows how the liquid 7 is supplied and recovered between the lens 4 of the projection optical system PL and the wafer W.
  • the wafer W is positioned in the direction of the arrow 25 A ( ⁇ X direction).
  • the liquid 7 supplied from the discharge nozzle 21a flows in the direction of the arrow 25B (-X direction), and flows into the inlet nozzles 23a and 2b. Recovered by 3b.
  • the main control system 14 determines the supply amount Vi and the recovery amount Vo of the liquid 7 by the following equations.
  • D is the diameter of the tip of the lens 4 (m)
  • V is the moving speed of the XY stage 10 (mZs)
  • d is the working distance of the projection optical system PL (working distance). (M).
  • the speed V during the step movement of the XY stage 10 is set by the main control system 14. Since D and d are input in advance, the supply of the liquid 7 is performed based on the equation (3). By adjusting the volume Vi and the recovery volume Vo, the space between the lens 4 and the wafer W in FIG.
  • the working distance d of the projection optical system PL is desirably as small as possible in order to allow the liquid 7 to be stably present between the projection optical system PL and the wafer W.
  • the working distance d is set to about 2 mm as an example. As described above, since the working distance d is short, the absorption amount of the exposure light is extremely small even if the transmittance of the liquid 7 for the exposure light is somewhat low.
  • the present invention is applied to a case where exposure is performed by a step-and-scan type projection exposure apparatus.
  • FIG. 5 is a front view showing the lower part of the projection optical system PLA of the projection exposure apparatus of this example, the liquid supply device 5, the liquid recovery device 6, and the like, and corresponds to FIG.
  • the lowermost lens 32 of the lens barrel 3 A of the projection optical system PLA has a distal end portion 32 A in the Y direction except for a portion necessary for scanning exposure ( (In the non-scanning direction).
  • a pattern image of a part of the reticle is projected onto a rectangular exposure area immediately below the tip 32A, and the reticle (not shown) is moved in the X direction (or The wafer W moves in the + X direction (or one X direction) via the XY stage 10 in synchronization with the movement at the speed V in the + X direction).
  • the liquid 7 is filled between the lens 32 and the surface of the wafer W by applying the liquid immersion method during the scanning exposure.
  • the supply and recovery of the liquid 7 are performed by the liquid supply device 5 and the liquid recovery device 6, respectively.
  • FIG. 6 shows the positional relationship between the distal end 32 A of the lens 32 of the projection optical system PLA and the discharge nozzle and the inflow nozzle for supplying and recovering the liquid 7 in the X direction.
  • the shape of the tip 3 2 A of 2 is a long and narrow rectangle in the Y direction, and + three discharges to the X direction side so that the tip 32 A of the lens 32 of the projection optical system PLA is sandwiched in the X direction.
  • Nozzles 21a to 21c are arranged, and two inflow nozzles 23a and 23b are arranged on one X direction side.
  • the discharge nozzles 21a to 21c are connected to the liquid supply device 5 through the supply pipe 21, and the inflow nozzles 23a and 23b are connected to the liquid recovery device 6 through the recovery pipe 23. It is connected. Also, the discharge nozzles 22a to 22c and the inflow nozzles 23a and 23b are rotated by approximately 180 degrees, and the discharge nozzles 22a to 22c and the inflow nozzles 24a and 2c are arranged. 4b and are arranged. Discharge noise 21a to 21c and inflow nozzles 24a and 24b are alternately arranged in the Y direction, and discharge nozzles 22a to 22c and inflow nozzles 23a and 23b are alternately arranged in the Y direction.
  • the discharge nozzles 22 a to 22 c are connected to the liquid supply device 5 via the supply pipe 22, and the inflow nozzles 24 a and 24 b are connected to the liquid recovery device 6 via the recovery pipe 24.
  • the supply pipe 21, the discharge nozzles 21 a to 21 c, the recovery pipe 23, and The liquid 7 is supplied and recovered by the liquid supply device 5 and the liquid recovery device 6 using the inflow nozzles 23a and 23b, and the liquid 7 flows in the X direction so as to fill the space between the lens 32 and the wafer W. .
  • the supply pipe 22, the discharge nozzles 22a to 22c, the recovery pipe 24, and the inflow nozzle The liquid 7 is supplied and recovered using 24a and 24b, and the liquid 7 flows in the + X direction so as to fill the space between the lens 32 and the wafer W.
  • the tip 32 A of the lens 32 and the wafer W can be scanned in either the + X direction or the 1X direction. Can be filled with the liquid 7, and a high resolution and a wide depth of focus can be obtained.
  • the supply amount Vi (m 3 / s) of the liquid 7 and the recovery amount Vo (m 3 / s) are determined by the following equations.
  • D SY is the length (m) of the tip 32A of the lens 32 in the X direction. This allows the liquid 7 to stably fill the space between the lens 32 and the wafer W even during scanning exposure.
  • the number and shape of the nozzles are not particularly limited.
  • supply or recovery of the liquid 7 is performed using two pairs of nozzles on the long side of the tip 32A. It may be.
  • the discharge nozzle and the inflow nozzle are arranged vertically. Is also good.
  • FIG. 7 shows the positional relationship between the distal end 32 A of the lens 32 of the projection optical system PLA and the discharge nozzle and the inflow nozzle for the Y direction.
  • the wafer is not perpendicular to the scanning direction.
  • supply and recovery of liquid 7 is performed using discharge nozzles 27a and inflow nozzles 29a and 29b arranged in the Y direction.
  • the supply and recovery of the liquid 7 is performed using the discharge nozzles 28a and the inflow nozzles 30a and 30b arranged in the Y direction. I do.
  • the supply amount V i (m 3 Z s) of the liquid 7 and the recovery amount V o (m 3 Z s) are determined by the following equations.
  • D sx is the length (m) of the tip 32 A of the lens 32 in the Y direction.
  • the liquid 7 is supplied between the lens 32 and the wafer W by adjusting the supply amount of the liquid 7 in accordance with the moving speed V of the wafer W during the step movement in the Y direction. Can be kept satisfied.
  • the space between the wafer W and the tip of the projection optical system PL can be continuously filled with the liquid 7. .
  • the liquid used as the liquid 7 in the above embodiment is not particularly limited to pure water, but has a high refractive index as much as possible because it has transparency to exposure light.
  • Use a material that is stable against the photoresist applied to the surface for example, Seda Oil
  • a fluorine-based inert liquid which is chemically stable that is, a liquid having a high transmittance to exposure light and a safe liquid may be used.
  • this fluorine-based inert liquid for example, Florinato (trade name of Suriem Co., USA) can be used. This fluorine-based inert liquid is also superior in terms of the cooling effect.
  • liquid 7 collected in each of the above-described embodiments may be reused.
  • a filter for removing impurities from the collected liquid 7 is provided in the liquid collection device or the collection pipe. It is desirable to keep.
  • the range in which the liquid 7 flows may be set so as to cover the entire projection area (irradiation area of the exposure light) of the reticle's projection image.
  • the exposure area be slightly larger than the exposure area and the area be as small as possible as in the above-described embodiments. Since it is difficult to collect all of the supplied liquid using the inflow nozzle, a partition is formed around the wafer, for example, so that the liquid does not overflow from the Z stage, and the liquid in the partition is recovered. It is desirable to provide additional piping.
  • the liquid 7 flows along the moving direction of the wafer W (XY stage 10).
  • the flowing direction of the liquid 7 does not need to match the moving direction. That is, the direction in which the liquid 7 flows may intersect with the direction of movement.
  • the velocity component in the one X direction of the liquid 7 is zero or a predetermined allowable value.
  • the liquid 7 may be allowed to flow in the following directions.
  • the moving direction is short (for example, several hundred ms).
  • the liquid can be filled between the projection optical system and the wafer.
  • the velocity components in the scanning direction and the non-scanning direction of the XY stage do not become zero in the movement of the wafer between the shot areas, that is, one shot exposure apparatus.
  • the XY stage starts stepping (moving in the non-scanning direction) while the XY stage is decelerating (before the velocity component in the scanning direction becomes zero), and the stepping is performed.
  • the XY stage Before terminating (before the velocity component in the non-scanning direction becomes zero, for example, during deceleration of the XY stage), the XY stage is started to accelerate in order to scan and expose the next shot area. Control the movement of the stage. Even in such a case, the direction in which the liquid flows can be controlled according to the moving direction of the wafer, and the space between the projection optical system and the wafer can be filled with the liquid.
  • the application of the projection exposure apparatus of the present embodiment is not limited to the projection exposure apparatus for semiconductor manufacturing.
  • a projection exposure apparatus for liquid crystal for exposing a liquid crystal display element pattern to a square glass plate It can be widely applied to a projection exposure apparatus for manufacturing a thin film magnetic head.
  • a reticle or a mask used in an exposure apparatus for manufacturing a device for manufacturing a semiconductor element or the like may be manufactured by an exposure apparatus using, for example, far ultraviolet light or vacuum ultraviolet light.
  • the exposure apparatus can be suitably used in a photolithographic process for producing a reticle or a mask.
  • a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or fiber laser as exposure illumination light is used, for example, by using Erbium (Er) (or both Erbium and Ytterbium (Yb)).
  • Er Erbium
  • Yb Ytterbium
  • the projection optical system PL is a refractive system, as the reflection system and either good c catadioptric system of the catadioptric system, as for example disclosed in U.S. Patent No.
  • an illumination optical system and a projection optical system composed of multiple lenses are incorporated into the exposure apparatus main body to perform optical adjustment, and a reticle stage and wafer stage consisting of many mechanical parts are attached to the exposure apparatus main body to perform wiring and By connecting pipes, installing pipes (supply pipes, discharge nozzles, etc.) for supplying and recovering liquid, and performing comprehensive adjustments (electrical adjustment, operation confirmation, etc.), the projection of this embodiment is achieved.
  • An exposure apparatus can be manufactured. It is desirable to manufacture the projection exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.
  • the semiconductor device includes a step of designing the function and performance of the device, a step of manufacturing a reticle based on this step, a step of manufacturing a wafer from a silicon material, and a step of manufacturing a reticle by the projection exposure apparatus of the above-described embodiment. It is manufactured through a step of exposing a wafer to a wafer, a step of assembling a device (including a dicing process, a bonding process, and a package process), and an inspection step.
  • the depth of focus of the pattern image of the mask is about n times the depth of focus in air (where n is the liquid used). (Refractive index), and a fine pattern can be stably transferred at a high resolution. Therefore, highly integrated semiconductor devices can be mass-produced at a high yield.
  • the projection optical system is moved along the moving direction of the substrate so as to fill the space between the tip of the optical element on the substrate side of the projection optical system and the surface of the substrate. Therefore, when the substrate is moved, the space between the tip of the projection optical system and the surface of the substrate is filled with the liquid, and the liquid immersion method can be used. Further, when foreign matter is attached to the substrate, the foreign matter attached to the substrate can be washed away, and there is an advantage that the yield of the final product can be improved.
  • the first or second projection exposure method of the present invention can be performed.
  • the supply amount and the recovery amount (flow rate) of the liquid are adjusted according to the moving speed of the substrate stage, even when the moving speed of the stage changes, the tip of the projection optical system is not affected.
  • the amount of the liquid existing between the substrate and the surface can be kept constant ⁇

Abstract

L'invention concerne un procédé d'exposition par projection capable de garder rempli de liquide (7) un espace entre un système optique de projection (PL) et une plaquette (W) même lorsque la plaquette (W) est déplacée lorsqu'un procédé d'immersion dans un liquide est utilisé pour procéder à une exposition, dans lequel un ajutage de décharge (21a) et des ajutages d'écoulement d'entrée (23a, 23b) sont disposés de manière à maintenir une lentille (4) à l'extrémité de pointe du système optique de projection (PL) dans un sens X. Lorsque la plaquette (W) est déplacée dans un sens X d'un étage XY (10), un liquide (7) réglé sur une température prédéfinie est fourni par un dispositif (5) d'alimentation en liquide par l'intermédiaire d'un conduit d'alimentation (21) et de l'ajutage de décharge (21a) de manière à remplir la partie située entre la lentille (4) et la surface de la plaquette (W), et le liquide (7) est récupéré de la surface de la plaquette (W) par un dispositif (6) d'alimentation en liquide via un conduit de récupération (23) et les ajutages d'écoulement d'entrée (23a, 23b), la quantité fournie et la quantité récupérée du liquide (7) étant régulées selon une vitesse de déplacement de la plaquette (W).
PCT/JP1999/001262 1998-03-26 1999-03-16 Procede et systeme d'exposition par projection WO1999049504A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU27479/99A AU2747999A (en) 1998-03-26 1999-03-16 Projection exposure method and system

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP10/79263 1998-03-26
JP7926398 1998-03-26

Publications (1)

Publication Number Publication Date
WO1999049504A1 true WO1999049504A1 (fr) 1999-09-30

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WO (1) WO1999049504A1 (fr)

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