WO1999050889A3 - Printed insulators for active and passive electronic devices - Google Patents

Printed insulators for active and passive electronic devices Download PDF

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Publication number
WO1999050889A3
WO1999050889A3 PCT/US1999/006454 US9906454W WO9950889A3 WO 1999050889 A3 WO1999050889 A3 WO 1999050889A3 US 9906454 W US9906454 W US 9906454W WO 9950889 A3 WO9950889 A3 WO 9950889A3
Authority
WO
WIPO (PCT)
Prior art keywords
printed
insulators
active
printing
electronic devices
Prior art date
Application number
PCT/US1999/006454
Other languages
French (fr)
Other versions
WO1999050889A2 (en
Inventor
Sigurd Wagner
Helena Gleskova
Dashen Shen
Original Assignee
Univ Princeton
Sigurd Wagner
Helena Gleskova
Dashen Shen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Princeton, Sigurd Wagner, Helena Gleskova, Dashen Shen filed Critical Univ Princeton
Priority to AU32031/99A priority Critical patent/AU3203199A/en
Publication of WO1999050889A2 publication Critical patent/WO1999050889A2/en
Publication of WO1999050889A3 publication Critical patent/WO1999050889A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02288—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating printing, e.g. ink-jet printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/66181—Conductor-insulator-semiconductor capacitors, e.g. trench capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A process for printing gate dielectrics in thin film transistors is provided. The dielectrics are based on organic polymers, and can be printed by several techniques, including xerographic printing and inkjet printing. The maximum process temperature is approximately 160 °C. This printing technique is appropriate for thin film transistor electronics and other macroelectronic circuits made on low-temperature substrates.
PCT/US1999/006454 1998-03-27 1999-03-26 Printed insulators for active and passive electronic devices WO1999050889A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU32031/99A AU3203199A (en) 1998-03-27 1999-03-26 Printed insulators for active and passive electronic devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7974698P 1998-03-27 1998-03-27
US60/079,746 1998-03-27

Publications (2)

Publication Number Publication Date
WO1999050889A2 WO1999050889A2 (en) 1999-10-07
WO1999050889A3 true WO1999050889A3 (en) 1999-12-23

Family

ID=22152544

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US1999/006453 WO1999050890A1 (en) 1998-03-27 1999-03-26 Method for making multilayer thin-film electronics
PCT/US1999/006454 WO1999050889A2 (en) 1998-03-27 1999-03-26 Printed insulators for active and passive electronic devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US1999/006453 WO1999050890A1 (en) 1998-03-27 1999-03-26 Method for making multilayer thin-film electronics

Country Status (2)

Country Link
AU (2) AU3203099A (en)
WO (2) WO1999050890A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0105145D0 (en) 2001-03-02 2001-04-18 Koninkl Philips Electronics Nv Thin film transistors and method of manufacture
DE10151131A1 (en) * 2001-10-17 2003-05-08 Infineon Technologies Ag Production of a structured layer on a surface of a substrate comprises forming a mask made from fixed toner on the surface of the substrate using a laser printing process, and forming the structured layer with a structure defined by a mask
GB2388709A (en) * 2002-05-17 2003-11-19 Seiko Epson Corp Circuit fabrication method
US8026565B2 (en) * 2003-01-30 2011-09-27 University Of Cape Town Thin film semiconductor device comprising nanocrystalline silicon powder
EP1684366A1 (en) * 2005-01-25 2006-07-26 Nederlandse Organisatie voor toegepast-natuurwetenschappelijk Onderzoek TNO Electronic device comprising an electronic component and encapsulation members
US7906415B2 (en) 2006-07-28 2011-03-15 Xerox Corporation Device having zinc oxide semiconductor and indium/zinc electrode
EP2089897A2 (en) 2006-12-07 2009-08-19 Innovalight, Inc. Methods for creating a densified group iv semiconductor nanoparticle thin film
US7851336B2 (en) 2008-03-13 2010-12-14 Innovalight, Inc. Method of forming a passivated densified nanoparticle thin film on a substrate
US8247312B2 (en) 2008-04-24 2012-08-21 Innovalight, Inc. Methods for printing an ink on a textured wafer surface

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US5820932A (en) * 1995-11-30 1998-10-13 Sun Chemical Corporation Process for the production of lithographic printing plates
US5919532A (en) * 1996-03-25 1999-07-06 Sharp Kabushiki Kaisha Active matrix substrate, method for fabricating the same, and liquid crystal display device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2581781B1 (en) * 1985-05-07 1987-06-12 Thomson Csf NON-LINEAR CONTROL ELEMENTS FOR FLAT ELECTROOPTIC DISPLAY SCREEN AND MANUFACTURING METHOD THEREOF
US5049527A (en) * 1985-06-25 1991-09-17 Hewlett-Packard Company Optical isolator
US4796975A (en) * 1987-05-14 1989-01-10 Amphenol Corporation Method of aligning and attaching optical fibers to substrate optical waveguides and substrate optical waveguide having fibers attached thereto
US5309003A (en) * 1992-02-28 1994-05-03 At&T Bell Laboratories Article comprising a real space transfer semiconductor device, and method of making the article
US5249245A (en) * 1992-08-31 1993-09-28 Motorola, Inc. Optoelectroinc mount including flexible substrate and method for making same
EP0680163A3 (en) * 1994-04-25 1996-07-03 At & T Corp Integrated detector/photoemitter with non-imaging director.
US5471552A (en) * 1995-02-22 1995-11-28 Industrial Technology Research Institute Fabrication of static-alignment fiber-guiding grooves for planar lightwave circuits
US5699073A (en) * 1996-03-04 1997-12-16 Motorola Integrated electro-optical package with carrier ring and method of fabrication

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US5385848A (en) * 1993-09-20 1995-01-31 Iowa Thin Film Technologies, Inc Method for fabricating an interconnected array of semiconductor devices
US5820932A (en) * 1995-11-30 1998-10-13 Sun Chemical Corporation Process for the production of lithographic printing plates
US5919532A (en) * 1996-03-25 1999-07-06 Sharp Kabushiki Kaisha Active matrix substrate, method for fabricating the same, and liquid crystal display device

Also Published As

Publication number Publication date
WO1999050890A1 (en) 1999-10-07
AU3203199A (en) 1999-10-18
WO1999050889A2 (en) 1999-10-07
AU3203099A (en) 1999-10-18

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