WO2000005430A1 - Chemical vapor deposition vaporizer - Google Patents
Chemical vapor deposition vaporizer Download PDFInfo
- Publication number
- WO2000005430A1 WO2000005430A1 PCT/US1999/016396 US9916396W WO0005430A1 WO 2000005430 A1 WO2000005430 A1 WO 2000005430A1 US 9916396 W US9916396 W US 9916396W WO 0005430 A1 WO0005430 A1 WO 0005430A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gas
- disposed
- vaporizing section
- main
- injection member
- Prior art date
Links
- 239000006200 vaporizer Substances 0.000 title claims abstract description 68
- 238000005229 chemical vapour deposition Methods 0.000 title description 13
- 230000008016 vaporization Effects 0.000 claims abstract description 77
- 238000002347 injection Methods 0.000 claims description 43
- 239000007924 injection Substances 0.000 claims description 43
- 239000007788 liquid Substances 0.000 claims description 41
- 238000001816 cooling Methods 0.000 claims description 36
- 238000010438 heat treatment Methods 0.000 claims description 26
- 239000012530 fluid Substances 0.000 claims description 15
- 238000004891 communication Methods 0.000 claims description 12
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- 239000010935 stainless steel Substances 0.000 claims description 8
- 238000012545 processing Methods 0.000 claims description 6
- 238000011144 upstream manufacturing Methods 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000012212 insulator Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 2
- 230000008021 deposition Effects 0.000 abstract description 22
- 239000012705 liquid precursor Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 22
- 230000008569 process Effects 0.000 abstract description 21
- 238000009834 vaporization Methods 0.000 abstract description 21
- 239000002243 precursor Substances 0.000 abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 10
- 239000003990 capacitor Substances 0.000 abstract description 8
- 229910044991 metal oxide Inorganic materials 0.000 abstract description 5
- 150000004706 metal oxides Chemical class 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 239000010703 silicon Substances 0.000 abstract description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052788 barium Inorganic materials 0.000 abstract 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052712 strontium Inorganic materials 0.000 abstract 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 abstract 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 53
- 238000000151 deposition Methods 0.000 description 23
- 239000012159 carrier gas Substances 0.000 description 20
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 19
- 239000000203 mixture Substances 0.000 description 16
- 239000010949 copper Substances 0.000 description 14
- 239000006185 dispersion Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000009833 condensation Methods 0.000 description 6
- 230000005494 condensation Effects 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- 238000000354 decomposition reaction Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000003708 ampul Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 239000004810 polytetrafluoroethylene Substances 0.000 description 3
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- -1 hexafluoro acetylacetonate anion Chemical compound 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 230000014759 maintenance of location Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 150000002902 organometallic compounds Chemical class 0.000 description 2
- 230000036961 partial effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 239000011364 vaporized material Substances 0.000 description 2
- XUBFKJLUXQJJPC-UHFFFAOYSA-N 3,4,5,6,6,7,7-heptafluoro-2-methylnona-2,4-diene Chemical compound CCC(F)(F)C(F)(F)C(F)=C(F)C(F)=C(C)C XUBFKJLUXQJJPC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005112 continuous flow technique Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000007323 disproportionation reaction Methods 0.000 description 1
- GCSJLQSCSDMKTP-UHFFFAOYSA-N ethenyl(trimethyl)silane Chemical compound C[Si](C)(C)C=C GCSJLQSCSDMKTP-UHFFFAOYSA-N 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000013212 metal-organic material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- JRZJOMJEPLMPRA-UHFFFAOYSA-N olefin Natural products CCCCCCCC=C JRZJOMJEPLMPRA-UHFFFAOYSA-N 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 239000003017 thermal stabilizer Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
Definitions
- the invention relates to an apparatus and process for the vaporization of liquid precursors and deposition of a film on a suitable substrate.
- a metal-oxide film such as a barium strontium titanate (BST) film
- BST barium strontium titanate
- Capacitors containing high- dielectric-constant materials such as organometallic compounds, usually have much larger capacitance densities than standard SiO 2 -Si 3 N 4 -SiO 2 stack capacitors making them the materials of choice in IC fabrication.
- BST One organometallic compound of increasing interest as a material for use in ultra large scale integrated (ULSI) DRAMs is BST due to its high capacitance.
- Deposition techniques used in the past to deposit BST include RF magnetron sputtering, laser ablation, sol-gel processing, and chemical vapor deposition (CVD) of metal organic materials.
- a liquid source BST CVD process entails atomizing a compound, vaporizing the atomized compound, depositing the vaporized compound on a heated substrate and annealing the deposited film.
- This process requires control over the liquid precursors and gases from introduction from an ampoule into a liquid delivery system through vaporization and ultimately to the surface of the substrate where it is deposited.
- the goal is to achieve a repeatable process which deposits a film of uniform thickness under the effects of a controlled temperature and pressure environment. This goal has not been satisfactorily achieved because the precursors are finicky and the deposition equipment requires a complex design.
- U.S. Pat. No. 5,204,314 entitled, "Method for Delivering an Involatile Reagent in Vapor Form to a CVD Reactor,” discloses a flash vaporizer using a matrix structure.
- the matrix structure generally comprises a heated screen mesh having restricted openings. After extended usage the matrix structure accumulates build up leading to a reduction in vaporization efficiency of the liquid precursors and negative effects on process repeatability and deposition rate.
- BST liquid precursors have a narrow range of vaporization between decomposition at higher temperatures and condensation at lower temperatures.
- Known vaporizers lack temperature controlled surfaces and the ability to maintain liquid precursors at a low temperature prior to injection into the vaporizer. This results in deposition of material in the injection lines and in the vaporizer and premature condensation or unwanted decomposition of the precursors.
- the deposits adversely affect not only the vaporizer but also upstream components such as positive displacement pumps because the pump can rupture its pressure seals or continue to operate until the pressure relief valves on the pump are tripped. Damage to system components, of course, requires maintenance and repair and over time becomes very expensive and increases the cost of ownership of the equipment. Additionally, the deposits formed in the vaporizer may be carried downstream to corrupt other components and ultimately even be delivered to the substrate surface thereby compromising its quality. Thus, temperature controlled flow paths through the vaporizer are needed.
- Still another difficulty encountered in the deposition of BST is that the deposition process is performed at elevated substrate temperatures, preferably in the range of about 400-750° C and the annealing process is performed at substrate temperatures in the range of about 550°-850° C.
- elevated substrate temperatures preferably in the range of about 400-750° C
- the annealing process is performed at substrate temperatures in the range of about 550°-850° C.
- These high temperature requirements impose demands on the chambers and its other components used in the deposition process.
- elastomeric O-rings are typically used to seal the deposition chamber and are not generally made of materials that will resist temperatures in excess of about 100° C for many fabrication cycles. Seal failure may result in loss of pressure as well as contamination of the process chemistry and the system components, thereby resulting in defective film formation on the wafer.
- a vaporizer for vaporizing BST and other materials which require vaporization, especially low volatility precursors which are transported as a liquid to the vaporizer to be converted to vapor phase and which must be transported at elevated temperatures to prevent unwanted condensation on gas flow surfaces.
- the vaporizer comprises a series of heated temperature controlled components which are configured for rapid removal, cleaning and/or replacement.
- the vaporizer also preferably includes features that protect seals (e.g., elastomeric O-rings) from the deleterious effects of high temperatures generated during fabrication of electrical devices, such as capacitors useful for ULSI DRAMs.
- the invention also provides a vaporizing apparatus having large smooth vapor passageways for high conductance to prevent clogging for consistently mixing and efficiently vaporizing liquid precursor components, and delivering the vaporized material to a deposition chamber with negligible decomposition and condensation of the gas in the vaporizer and gas delivery lines.
- the apparatus increases vaporizing efficiency by providing temperature controlled increased surface area to reduce the likelihood of fouling or clogging typically associated with existing vaporizers.
- the present invention is characterized by its use in the manufacture of capacitor films of consistently high quality, with significantly reduced and simplified maintenance, and capability for depositing CVD films at high rates with less particle generation.
- the net result is a fabrication process with enhanced efficiency and economy.
- a main body having a main vaporizing section is equipped with detachable heating elements.
- a blocker is disposed below the main vaporizing section.
- High conductance channels formed in the blocker act as an extended vaporizing surface.
- the channels are in parallel relation and lead to an outlet coupled to a downstream gas line.
- the blocker comprises a gas compactor at least partially disposed within the main vaporizing section.
- the gas compactor has upper and lower ports in communication with an inlet and a outlet, respectively.
- a gas channel is defined between the gas compactor and the main vaporizing section to provide fluid communication between the inlet and outlet via the ports.
- a filter may be disposed at a lower end of the vaporizer.
- a vaporizer comprises separable components selectively coupled.
- the vaporizer components are coupled by clamps while in another embodiment the components are coupled by VCR ® fittings.
- the components are easily disassembled for inspection and cleaning.
- Figure 1 is a perspective view of a chamber system of the present invention
- Figure 2 is a perspective view of a chamber and vaporizer module
- Figure 3 is a simplified schematic representation of a liquid and gas delivery system
- Figure 4 is a partial schematic cross sectional view of a vaporizer of the present invention.
- Figure 5 is partial schematic cross sectional view of an alternative embodiment of the vaporizer.
- the present invention is directed to a vaporizer for use in a chemical vapor deposition (CVD) system. While the subsequent description makes references to BST deposition it is understood that the invention may be used in any processing system requiring the advantages of superior serviceability, uniform film deposition, and enhanced efficiency resulting from temperature controlled surfaces.
- the vaporizer has particular application for the fabrication of metal-oxide dielectrics useful in making capacitors used in ULSI DRAMs as well as a number of other electrical devices. In general, devices that can be made with the present system are those characterized by having one or more layers of insulating, dielectric, or conducting material deposited on a substrate.
- FIGS 1 and 2 are perspective views of a CVD system 10 incorporating the present invention.
- the system 10 generally includes a chamber body 12, a heated lid assembly 14, an integrated vaporizer module 16 and an exhaust/pumping system 18 comprising a gate valve 20, a turbo pump 22, and a first cold trap 24.
- the vaporizing module 16 is shown mounted adjacent to the chamber body 12 in a vaporizer cabinet 26 which includes an outlet line 28 connected to the inlet into the chamber body 12 at one end and a vaporizer 100 at another end.
- a first valve 30 Disposed along the outlet line 28 is a first valve 30 which is connected in turn to a bypass line 32 extending out through the back of the cabinet 26 and is connected to the exhaust pumping system 18 by a conduit in which a second cold trap 34, located downstream from the valve 30, is disposed.
- the bypass line 32 is adapted to deliver both vaporized gas as well as liquid solvent into the cold trap 34 in preparation of delivering vaporized gas to the chamber body 12 during processing or during cleaning of the system 10.
- the first valve 30 controls delivery of the vaporized material to the chamber 12 through the cold trap 34.
- a second valve 36 such as an isovalve is disposed downstream from the first valve 30 to selectively deliver the vaporized gas into the chamber body 12.
- the second valve 36 is mounted to the lower portion of the chamber 12 via a rod and washer assembly 38.
- This assembly 38 enables adjustment of the delivery line as well as the valve 36 in relation to the chamber 12.
- the mount generally includes first and second rings 40, 42, respectively, one disposed in the other, to allow rotatable adjustment of an isovalve 36 and the outlet line 28.
- the second valve 36 is mounted to the second ring 42 via a plurality of rods 44 (four shown here) which are mounted from the ring 42 and include a spring 46 disposed above the upper portion of the rod and the ring 42.
- the two rings 40, 42 enable rotation of the assembly 38 while the spring and rod arrangement allow vertical adjustment of the assembly 38 to ensure proper alignment of the gas feed line 30 into the chamber 12.
- the suspension assembly 38 provides automatic compensation for thermal expansion/contraction to maintain vacuum seals without the mechanical and thermal stress.
- the size and dimensions of the system 10 are dictated by the size and shape of the workpiece on which processes of the present invention are performed.
- Figure 3 shows a simplified liquid and gas delivery system 50 for supplying the liquid precursors and carrier gases to the vaporizer 100.
- a first gas container 52 and second gas container 54 are connected to the vaporizer 100 to provide carrier gases. The function of these gases is described in detail below.
- a liquid ampoule 56 is shown connected to the vaporizer 100 to provide liquid precursors. So that the flow rates of the gases and liquids may be monitored and controlled, flow meters 58 are disposed in the liquid and gas delivery lines.
- the gas delivery lines are preferably made of a material having a low coefficient of friction, such as PTFE, to allow for high flow velocities.
- Other devices which are commonly known and used in the industry but not shown in Figure 3 include bubblers, degassers, shut-off valves, etc.
- the inventors have recognized that deposition layer uniformity can be enhanced, and maintenance can be reduced, if the vaporizer is substantially maintained at an ideal isothermal system temperature (e.g., 250° C ⁇ 5° for BST).
- the vaporizer 100 incorporates several active and passive thermal control systems including thermal control features which serve to protect a main seal by cooling it below the ideal isothermal system temperature. Cooling is achieved without inducing significant temperature fluctuations and gradients in the vaporizer components exposed to the system chemistry, and without excessive cooling and heating power losses.
- FIG 4 is a cross sectional view of one embodiment of the vaporizer 100 of the present invention.
- the vaporizer 100 generally includes an input manifold 102, a cooling head 104, and a main body 106 comprising a top block 108 and a bottom block 110.
- the input manifold 102 is coupled at the upper end of the vaporizer 100 and provides an inlet 112 wherein an injection member 114, such as a capillary tube, is coaxially disposed.
- the injection member 114 is connected to the liquid precursor ampoule 56 (shown in Figure 3) and the first gas container 52 (also shown in Figure 3).
- the cooling head 104 and the top block 108 are joined at abutting flanges 120 and 122 formed on the head 104 and top block 108, respectively.
- the top block 108 and the bottom block 110 are joined at flanges 124 and 126 defined on the top block 108 and bottom block 110, respectively.
- the flanges 120, 122, 124, and 126 are adapted to receive clamps 128, such as KF clamps, to hold the various vaporizer components together during operation.
- O-ring seals 130 and 132 disposed in flanges 120 and 124, respectively, provide hermetic seals at the interfaces of the blocks 108, 110 and cooling head 104.
- O-rings 130, 132 may be any of many high temperature metal-to-metal seals such as the aluminum Delta seal from Helicoflex, for example.
- One or more cooling channels 134 are preferably disposed in the head 104 in order to actively cool the O-ring seal 130 and the incoming liquid precursors.
- a heat exchange fluid e.g., water, ethylene glycol, silicone oil, etc.
- another cooling channel may be disposed in the main body 106 adjacent the O-ring seal 132.
- the cooling head is preferably made of aluminum or some other thermal conductor.
- a thermocouple may be disposed in a slot 222 to monitor the operating temperature at an upper end of the vaporizer 100.
- a dispersion/carrier, gas conduit 135 is formed in the cooling head 104 and leads to a recess 137 formed in an upper portion of the top block 108.
- An injection line (not shown) connects the second gas container 54 (shown in Figure 3) to the dispersion'carrier gas conduit 135 to provide a dispersion/carrier gas thereto.
- the cooling head 104 provides a centrally formed inlet bore 136 wherein the injection member 1 14 is disposed and secured by a threaded sleeve 138.
- the injection member 114 is concentrically received by a gas passageway 140 extending longitudinally through a neck 142 of the top block 108 and terminating near a lower end of the neck 142.
- the concentric gas passageway 140 disposed about the outer perimeter of the injection member 114, may be of any geometric shape and is adapted to deliver one or more dispersion gases to a tip, or nozzle 144, of the injection member 114.
- the concentric gas passageway 140 and the injection member 1 14 are made of PTFE for low friction coefficient and prevention of clogging.
- the concentric gas passageway 140 leads to a main vaporizing section 146 which is shown as a frustoconical surface having a diametrically narrower upper end and a diametrically enlarged lower end.
- the main vaporizing section 146 provides a large, preferably smooth, heated surface area onto which a fluid may be deposited.
- a blocker 148 aligned with the lower end of the main vaporizing section 146 provides an extended vaporizing surface.
- the blocker 148 is preferably made of aluminum, or some other thermal conductor, and comprises a plurality of high conductance channels 150.
- a commercially available filter 152 such as the one available from PALL is disposed below the blocker 148 and above a high conductance outlet 153.
- the filter 152 is seated on an annular shoulder 154 of the bottom block 110 and is secured from above by the top block 108 thereby allowing for ease of periodic replacement by unclamping the two blocks 108, 110.
- the filter 152 can be any number of commercially available filters such as the one available from PALL. This arrangement provides a large conductance for shorter resonance time in the vaporizer 100 and also facilitates inspection and cleaning of the vapor flow paths.
- the blocks 108 and 1 provide a relatively large thermal mass for retention and transmission of thermal energy generated by one or more heating elements 156 (shown here as cartridges) surrounding the blocks 108 and 110 thereby ensuring an optimal isothermal temperature on the vaporization surfaces, as well as downstream.
- the heaters 156 are slidably received in receptacles 158 and may be selectively removed for maintenance and servicing.
- the heating elements 156 preferably deliver a total heating power of between about 1000W and 3000W to the blocks 108, 1 10 and are controlled to maintain the main body 106 at the optimum isothermal temperature by a conventional PID controller (not shown).
- the controller is connected to a thermocouple (also not shown) positioned within at least one, and preferably both, of the blocks 108, 1 10 proximate to the heated vaporizing surfaces.
- the vaporizer 100 of the first embodiment consists of six primary components, i.e., the input manifold 102, the cooling head 104, the top block 108, the bottom block 110, the heating elements 156, the filter 152, and the blocker 148. As described above, the top block 108 and cooling head 104 are selectively coupled with a KF clamp. The top block 108 is similarly coupled to the bottom block 1 10.
- the filer 152 which must be periodically exchanged, and the blocker 148, which may require periodic cleaning, may be removed by uncoupling the top block 108 from the bottom block 110. While the blocks 108, 110 are shown coupled by KF clamps, other coupling assemblies, such as VCR ® fittings may be used to advantage.
- the liquid precursor is initially combined with a carrier gas, such as argon, upstream from the vaporizer 100.
- a carrier gas such as argon
- the mixture of liquid precursor components and the carrier gas is then delivered through the injection member 114 (preferably 2-20 mils inner diameter) to a point just above the main vaporizing section 146.
- the liquid and gas are supplied at a relatively high flow rate, e.g., lOml/min. liquid and 100-2000sccm gas, which causes the liquid to exit the nozzle 144 and enter the main vaporizing section 146 as a jet of liquid and gas with a high nozzle velocity.
- the flow meter 58 (shown in Figure 3) can be used to control the amount of gas flowed in direct relation to the flow rate of the liquid precursor component mixture.
- the flow rate of the liquid is typically controlled by a flow controller such as the flow meter shown in Figure 3.
- the flow velocity of the liquid precursors may be independently controlled by the flow of the carrier gas input to the vaporizer 100.
- One or more dispersion/carrier gases such as argon, are delivered through the dispersion/carrier gas conduit 135 and flowed concentrically about the injection member 1 14 to prevent liquid droplets from forming on the nozzle 144 and moving up the outer cylinder of the injection member 1 14.
- the dispersion/carrier gas picks up the liquid precursor mixture jetting out of the injection member 1 14 and carries the mixture down into the main vaporizing section 146 where the liquid precursor is vaporized.
- the spacing between the injection member nozzle 144 and the main vaporization section 146 is preferably adjustable.
- Adjustment of the flash vaporization to avoid a liquid droplet "dance on the frying pan” effect is obtained by adjusting the flow rate of the gas and liquid precursor mixture.
- the vaporized precursors are then channeled through the plurality of high conductance channels 150 formed in the blocker 148.
- the blocker 148 acts as a second stage vaporizer while simultaneously collecting unvaporized liquid and directing them into the filter 152.
- the filter 152 enables the entrapment of any liquid which is not vaporized. This prevents liquids from passing through the vaporizer 100 and into the chamber 12 (shown in Figures 1, 2, and 3).
- the resultant deposition gas then passes through the vaporizer outlet 153 for delivery to the deposition chamber 12.
- the wide-mouthed outlet 153 is designed for large conductance so that precursor vapors are readily carried from the vaporizer 100 into the chamber 12.
- a thermal choke structure comprising the cooling channel 134 and physical separation of the main body 106 from the other upstream vaporizer components by the neck.
- the thermal choke isolates the upper portion of the vaporizer 100 from the heat generated by heating elements 156 and prevents heat loss and generation of cold spots without inducing significant detrimental cooling effects on the other system components.
- the design allows the main body 106 to be maintained at an optimal isothermal temperature (e.g., 250° C ⁇ 5° for BST).
- FIG. 5 is a cross sectional view of a second embodiment of the vaporizer 100 of the present invention.
- the vaporizer 100 generally includes the components of the first embodiment, i.e.. an input manifold 102, a cooling head 104, and a main body 106.
- the second embodiment comprises some design modifications which are discussed below.
- Figure 5 shows the dispersion/carrier gas conduit 202 formed in the main body 106.
- the conduit 202 extends from below the main body 106 along a perimeter portion thereof and then terminates in a passageway at the latter portion of the injection nozzle 144.
- An injection line 204 connected to the conduit 202 by quick disconnect fittings 206 delivers a dispersion/carrier gas to the conduit 202 from the second gas container 54 (shown in Figure 3).
- the injection member 1 14 terminates at the entrance to a main vaporizing section 146 housing a blocker, or gas compactor 208.
- the gas compactor 208 is a substantially elongated cylinder having an inlet 210 at an upper end and outlet 212 at a lower end.
- the inlet 210 receives the nozzle 144 and comprises a plurality of exhaust ports 214 formed in the inlet wall.
- the outlet 212 has a plurality of intake ports 216.
- the outer diameter of the gas compactor 208 is slightly less (a few millimeters) than the diameter of the main vaporizing section 146 so that a fluid channel 218 is formed leading from the exhaust ports 214 to the intake ports 216 providing communication therebetween.
- the main body 106 preferably made of a monolithic piece of stainless steel, provides a relatively large thermal mass for retention and transmission of thermal energy generated by a heating jacket 220 and has a high specific heat capacity thereby ensuring an optimal isothermal temperature on the vaporization surfaces, as well as downstream.
- the heating jacket 220 is in the form of a C-clamp having its ends secured by a screw (shown in Figure 3) such that it is supported on the exterior of the main body 106 and allows for easy removal of the heating jacket 220.
- the heating jacket 220 may be electrically heated (e.g., resistive heaters) or fluidly heated and preferably delivers a total heating power of between about 1000W and 3000W to the main body 106 for typical sizes and flow rates of these applications.
- Cartridges such as those used in Figure 4 may also be used.
- the heating jacket 220 is controlled to maintain the main vaporizing section 146 at the optimum isothermal temperature by a conventional PID controller (not shown).
- the vaporizer 100 of the second embodiment may also comprise a thermocouple, preferably located in the main body 106 proximate the injection member 114, to monitor the temperature during operation.
- An additional thermocouple (also not shown) may be received by the slot 222 located partially in the input and partially in the cooling head 104.
- a thermal radiation shield 224 is shown circumferentially disposed about the midsection of the vaporizer 100.
- at least the main body 106 is enclosed within the shield 224.
- the cooling head 104 is also enclosed.
- the shield 224 does not directly contact the main body so that an air pocket is formed around the main body 106.
- the shield 224 is preferably a metal having a high thermal insulating capacity such as stainless steel.
- the vaporizer 100 of the second embodiment consists of six primary components, i.e., the input manifold 102, the cooling head 104, the main body 106, the heating jacket 220, the gas compactor 208, and the shield 224.
- the components are equipped with VCR fittings.
- other coupling devices may be used, such as the KF clamps used in the first embodiment for example.
- the operation of the vaporizer 100 of the second embodiment is substantially the same as that of the first embodiment described above with a few exceptions.
- the dispersion/carrier gas conduit 202 is shown disposed in the main body 106 at least partially adjacent the heating jacket 220. This allows the dispersion/carrier gas to be heated before its injection into the passageway.
- the injection member 114 is shown in Figure 5 extending below the neck 142 and terminating at the end of passageway 140 above the gas compactor inlet 210. This allows the liquid precursors to reach an elevated temperature due to the heat generated by the heating jacket 220 and transmitted by the main body 106.
- the precursors are then delivered into the inlet 210 where they are channeled through and around the gas compactor 208 as indicated by the arrows.
- the vaporized gas then exits the vaporizer 100 through the outlet 212 and is delivered to the deposition chamber 12 downstream.
- While the number of intake ports 216 (three shown) is preferably less than the exhaust ports 214 (five shown) the total effective cross sectional area of the ports 214, 216 is substantially equal such that the volume flow rate (seem) is substantially equal.
- the desired pressure is achieved by manipulating the orientation of the vaporizer 100 (to compensate for the effects of gravity), changing the length of the gas compactor 208, and altering relative size difference between the cross sectional areas of the ports 214, 216.
- the precise dimensions will also depend on the type of fluid used and the surface friction provided by the main vaporizing section 146 and the gas compactor 208. A slight pressure differential which biases the fluid downstream is most preferable.
- the second embodiment also employs the metal membrane 226 to reduce thermal decomposition of the liquid precursor components prior to vaporization by further inhibiting thermal conduction. Additional thermal insulation of the injection member 114 is provided by the relatively thin wall of the neck 142, e.g., a few millimeters and by the thermal insulating value of the material.
- the neck 142 which forms an integral part of the main body 106, is preferably made of stainless steel, PTFE, or other material having a relatively low thermal conductivity.
- the vaporizer 100 of each embodiment operates to vaporize a mixture of precursor components, such as BST, and a carrier gas by providing a main vaporizer section 146 with increased surface area which exposes the mixture to a large area of evenly heated surfaces.
- the various components of the vaporizer 100 such as the main vaporizing section 146, the blocker 148 of the first embodiment, and the gas compactor 208 of the second embodiment each act to vigorously mix and vaporize the precursor components, carrier gases, and dispersion gases. This arrangement provides a large conductance for shorter resonance time in the vaporizer 100. The maximized surface area serves to vaporize more efficiently as well as prevent clogging.
- the amount of power required for complete vaporization is a function of the chemistry of the precursor components and carrier gas, and the flow rate of the mixture. As one example, with a BST flow rate of 0.10 ml/min and a carrier gas, e.g., Ar, flow rate of 200-300 seem, the amount of power necessary to heat and completely vaporize the flow is approximately 10W. In contrast to conventional arrangements, the amount of heating (e.g., vaporizing) power supplied to the mixture is set substantially higher than the level of power actually required to achieve complete vaporization.
- the thermal power transferred to the vaporizer 100 is set to be one to two orders of magnitude higher than the 10W required for complete vaporization of the mixture, i.e., between about 100W and 1000W, and preferably 20-30 times higher, i.e., between 200-300W and 2000W-3000W.
- the heating power absorbed by the flowing mixture is a small fraction of the heating power which is available. Therefore, the power absorbed by the gas vapor presents an insignificant perturbation in relation to the available heating power, making it possible to substantially maintain an ideal isothermal temperature (e.g., 250° C ⁇ 5° for BST) of the heating surfaces.
- the ideal isothermal system temperature will be in the range of about 200-300°C.
- Exemplary metal-oxide layers which can be deposited using the present system may include tantalum pentoxide (Ta,O 5 ), a zirconate titanate (ZrxTiyOz ), strontium titanate (SrTiO 3 ), barium strontium titanate (BST), lead zirconate titanate (PZT), lanthanum-doped PZT, bismuth titanate (Bi 4 Ti 3 O
- Other materials which can be deposited include those materials having a narrow range of vaporization between condensation and decomposition.
- a Cu layer may be deposited using by any known CVD Cu process or precursor gas, including copper ⁇ 2 (hfac) 2 and Cu +2 (fod) 2 (fod being an abbreviation for heptafluoro dimethyl octanediene), but a preferred process uses the volatile liquid complex copper +l hfac,TMVS (hfac being an abbreviation for the hexafluoro acetylacetonate anion and TMVS being an abbreviation for trimethylvinylsilane) with argon as the carrier gas.
- One such mixture i.e., copper +2 (hfac) 2
- Cupra SelectTM a registered trademark of Schumacher, Inc.
- TMVS and hfac are additives used to enhance adhesion, nucleation, and stability. Specifically, TMVS is a thermal stabilizer which prevents a reaction until a desired temperature is reached while hfac is a deposition controlling compound. Both TMVS and copper +2 (hfac) 2 are volatile byproducts of the deposition reaction that are exhausted from the chamber. The deposition reaction is believed to proceed according to the following mechanism, in which (s) denotes interaction with a surface and (g) denotes the gas phase:
- step 1 the complex is adsorbed from the gas phase onto a metallic surface.
- step 2. the coordinated olefin (TMVS in this specific case) dissociates from the complex as a free gas leaving behind Cu * 'hfac as an unstable compound.
- step 3 the Cu * 'hfac disproportionates to yield copper metal and volatile Cu ⁇ 2 (hfac) 2 .
- the disproportionation at CVD temperatures appears to be most strongly catalyzed by metallic or electrically conducting surfaces.
- the organometallic copper complex can be reduced by hydrogen to yield metallic copper.
- the volatile liquid complex, Cu +1 hfac,TMVS can be used to deposit Cu through either a thermal or plasma based process, with the thermal based process being most preferred.
- the substrate temperature for a plasma enhanced process is preferably between about 100 and about 400°C, while that for a thermal process is between about 50 and about 300°C, and most preferably about 170°C.
- the vaporizer temperature for copper deposition is preferably between 50 and 85° C and most preferably 65° C.
Abstract
Description
Claims
Priority Applications (3)
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JP2000561376A JP4480274B2 (en) | 1998-07-21 | 1999-07-20 | Chemical vapor deposition vaporizer |
EP99935734A EP1102871A1 (en) | 1998-07-21 | 1999-07-20 | Chemical vapor deposition vaporizer |
KR1020017000978A KR20010053597A (en) | 1998-07-21 | 1999-07-20 | Chemical vapor deposition vaporizer |
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US9356398P | 1998-07-21 | 1998-07-21 | |
US60/093,563 | 1998-07-21 |
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PCT/US1999/016396 WO2000005430A1 (en) | 1998-07-21 | 1999-07-20 | Chemical vapor deposition vaporizer |
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US (1) | US6210485B1 (en) |
EP (1) | EP1102871A1 (en) |
JP (1) | JP4480274B2 (en) |
KR (1) | KR20010053597A (en) |
WO (1) | WO2000005430A1 (en) |
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JP2003527739A (en) | 2003-09-16 |
EP1102871A1 (en) | 2001-05-30 |
KR20010053597A (en) | 2001-06-25 |
JP4480274B2 (en) | 2010-06-16 |
US6210485B1 (en) | 2001-04-03 |
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