WO2000011706A1

WO2000011706A1 - Illuminator and projection exposure apparatus

Info

Publication number: WO2000011706A1
Application number: PCT/JP1999/004087
Authority: WO
Inventors: Taro Ogata
Original assignee: Nikon Corporation
Priority date: 1998-08-18
Filing date: 1999-07-29
Publication date: 2000-03-02
Also published as: AU4930099A

Abstract

An illuminator for illuminating pattern areas of different types formed on a reticle substantially simultaneously under their optimum illumination conditions. The illuminating light (IL) from an exposure light source (2) is directed to a fly-eye lens (5). The illuminating light emerging from a large number of light source images on the emergence face of the fly-eye lens (5) illuminates a reticle (10) through a condenser lens (9) and so forth. The image of the pattern of the reticle (10) is transferred onto a wafer (12) through a projection optical system (11). Segmental pattern areas of different types are formed in the pattern area of the reticle (10). A fly-eye mask (4) is provided over the incident face of the fly-eye lens (5). The fly-eye mask (4) is divided into a large number of filter elements corresponding to the respective lens elements of the fly-eye lens (5). The filter elements have predetermined transmittance distributions independent of each other according to the illumination conditions of the segmental pattern areas.

Description

Lighting equipment and projection exposure equipment

The present invention relates to an illuminating device for illuminating a predetermined pattern, for example, a lithography device for manufacturing a device such as a semiconductor device, an imaging device (such as a CCD), a liquid crystal display device, a plasma display, or a thin film magnetic head. It is suitable for use in an illumination optical system of a projection exposure apparatus used when a mask pattern is transferred onto a substrate in a process. Further, the present invention relates to an exposure method for transferring a predetermined pattern onto a substrate to be exposed by using the illumination device, and a method for manufacturing a device. Background art

Stepper type or step used when manufacturing semiconductor devices, etc.

• In a projection exposure apparatus such as an AND scan method, it is required to increase the resolution of a projected image of a reticle pattern as a mask to be transferred onto a substrate such as a Jahachi. Since the resolution of the projection optical system is proportional to the wavelength of the exposure light (exposure wavelength) λ and inversely proportional to the numerical aperture の of the projection optical system, recently the exposure wavelength λ is, for example, an ArF excimer laser beam (wavelength 193 nm). )), And the numerical aperture NA has increased to, for example, 0.6 or more. However, the depth of focus of the projected image (DOF) is substantially order to proportional to Ramudazetanyuarufa ^2, simply by shortening the exposure wavelength lambda, and the numerical aperture ΝΑ is increased, there is a possibility that the depth of focus becomes too shallow.

Therefore, in order to maintain the depth of focus at a certain level and increase the resolution, for example, Japanese Patent Application Laid-Open No. Hei 4-122514 discloses an optical system in an illumination optical system. A modified light source method has been proposed in which the shape of the aperture stop (pseudo light source) is an annular shape or a plurality of aperture shapes arranged around the optical axis. This modified light source method can be regarded as a kind of so-called super-resolution technology. When this modified light source method is applied, whether the reticle pattern is a periodic pattern or an isolated pattern, and if the pattern is a periodic pattern, the direction of the periodicity, etc. Accordingly, it is necessary to optimize the illumination conditions by switching the shape of the aperture stop in the illumination optical system. Further, the conventional illumination optical system illuminates the entire illumination area on the reticle under the same illumination conditions.

As semiconductor technology advances, the patterns of integrated circuits in semiconductor devices have become more complex. In recent years, integrated circuits in which a plurality of types of circuits such as DRAM and logic circuits are mixed and mounted on the same chip, such as ASIC (application-specific IC), have been developed. In this type of hybrid integrated circuit, a plurality of different types of patterns may be mixed in the same layer of one chip. However, when a plurality of patterns of different types coexist in the same layer as described above, when the conventional modified light source method is applied to expose all the patterns on the reticle at one time, a plurality of patterns on the reticle are exposed. Since the different types of pattern regions are illuminated under the same illumination conditions, it is difficult to optimize the illumination conditions for each of the multiple types of pattern regions.

To avoid this, it is necessary to selectively illuminate each pattern area on the reticle using the variable field stop (reticle blind) of the illumination optical system, optimize the illumination conditions for each, and repeat exposure. Although good, performing multiple exposures on one layer in this way has the disadvantage of reducing throughput in the exposure process.

In addition, the optimal illumination conditions are calculated on average for multiple types of pattern areas. Therefore, a method is also conceivable in which all the patterns on the reticle are exposed at once under the illumination conditions set in this way. However, in this exposure method, the optimum illumination conditions are not necessarily set for each of the plurality of types of pattern areas, and therefore, the depth of focus is less than the allowable range in the projected image for each of the pattern areas. The required resolution may not be obtained. In recent semiconductor device manufacturing processes, especially when exposing a critical layer including a pattern with a line width close to the resolution limit, the exposure margin, which is the tolerance of the depth of focus and the amount of degradation in resolution, is extremely small. Therefore, if the illumination conditions are not optimal for each pattern area on the reticle, the yield of the finally manufactured semiconductor device will be reduced.

In view of the above, the present invention provides an illumination that can illuminate each pattern area substantially simultaneously under optimal illumination conditions when a plurality of different pattern areas are formed on a reticle. It is intended to provide equipment.

It is still another object of the present invention to provide a projection exposure apparatus which is provided with such an illumination device and can perform exposure at a high throughput, and a method of manufacturing such a projection exposure apparatus.

Another object of the present invention is to provide an exposure method using such an illuminating device and a device manufacturing method capable of manufacturing a highly accurate device using such an illuminating device. Disclosure of the invention

An illumination device according to the present invention comprises: a light source system (2, 3) for supplying illumination light; a light source image forming optical system (5) for forming a plurality of light source images from illumination light from the light source system; Of light from the light source image on the target surface (P 2) And a condenser optical system (7A, 7B, 9) that illuminates the pattern in a superimposed manner, and an installation surface (P 1 ), A filter (4; 4B) is arranged. The filter is divided into a plurality of regions corresponding to the plurality of light source images, and the plurality of regions have independent transmittance distributions. A filter element (4a; 4Ba) is provided, and the transmittance distribution of each of the plurality of filter elements is different from each other forming a pattern (31; 39) on the irradiated surface. The light intensity distribution on the optical Fourier transform plane (P 3) for each of these pattern areas is determined independently of each other according to the type of pattern areas (31a, 31b; 39a to 39c). It is set to be set to the distribution of.

According to the present invention, the pattern on the irradiated surface (P 2) is divided into a plurality of different types of pattern regions such as a periodic pattern and an isolated pattern. Since the plurality of types of pattern regions have mutually different optimal lighting conditions, in the present invention, as an example, a plurality of filter elements constituting the filter (4; 4B) are respectively assigned to the plurality of types of pattern regions. It is divided into a plurality of partial filter areas (35a, 35b; 41a to 41c) according to the pattern area, and a predetermined transmittance is given to each of these partial filter areas. Simultaneously illuminate the pattern area. This means that the light intensity distributions on the optical Fourier transform plane (P 3) for the plurality of types of pattern regions can be set to predetermined distributions independently of each other, that is, the illumination conditions for the plurality of types of pattern regions can be set independently of each other. It means that it can be optimized.

Next, a first projection exposure apparatus according to the present invention comprises: an illumination device (2 to 9) according to the present invention; and a mask stage (13) on which a mask (10; 1OA) as an object to be illuminated is placed. And the projection optical system (1 1) and the mask And a substrate stage (1 7) for positioning the substrate (1 2) on which the pattern is to be transferred, illuminating the mask with illumination light from the illumination device, and projecting an image of the mask pattern onto the projection optics. It is transferred onto the substrate via the system.

According to the first projection exposure apparatus of the present invention, the pattern (31; 39) on the mask includes a plurality of different types of pattern regions (31a, 31b; 39a to 39c). ). Then, if the projection exposure apparatus is a stepper type (static exposure type), the illumination device simultaneously illuminates the plurality of types of pattern areas (31a, 31b) under optimal illumination conditions. With this, an image of the pattern on the mask is exposed on the substrate at a high throughput. In addition, a wide exposure margin such as the depth of focus and resolution is secured for each pattern area, so that the entire pattern image on the mask is transferred onto the substrate with high accuracy.

On the other hand, if the projection exposure apparatus is a scanning exposure type, for example, the pattern (39) on the mask is divided into a plurality of types of pattern areas (39a to 39c) in a direction orthogonal to the scanning direction. The illumination device illuminates the panel in an elongated illumination area (40) in a direction perpendicular to the scanning direction, and a plurality of areas (40a to 40a) corresponding to the pattern area in the illumination area. The lighting conditions of c) are optimized respectively. Then, by synchronously scanning the mask and the substrate in the scanning direction with respect to the illumination area (40), the pattern on the mask is transferred onto the substrate with high throughput with high throughput. Further, the projection exposure apparatus of the present invention can be manufactured by incorporating the illumination apparatus so that a plurality of illumination conditions can be set on the mask.

Next, the second projection exposure apparatus according to the present invention has an illumination system for irradiating a mask with an illumination beam, and exposes the substrate with the illumination beam via the mask. In a projection exposure apparatus, in order to partially change the illumination conditions of the mask within the irradiation area of the illumination beam, the transmittance on a surface substantially conjugate to the pattern surface of the mask in the illumination system An optical member is provided which makes at least a part of the distribution non-uniform, and independently sets the intensity distribution of the illumination beam on the optical Fourier transform plane with respect to the pattern plane for each illumination condition.

According to the second projection exposure apparatus of the present invention, even when a plurality of types of pattern areas having different optimum illumination conditions are formed on the pattern surface of the mask, the optical characteristics of the pattern area can be improved. The members allow the intensity distribution of the illumination beam on the Fourier transform plane to be set independently for each of the illumination conditions, so that each pattern area can be illuminated substantially simultaneously under the optimal illumination conditions. The pattern image on the mask can be exposed on the substrate with high precision and high throughput.

It is preferable that the optical member has a different shape of the secondary light source formed on the Fourier transform plane according to the illumination condition.

An exposure method according to the present invention is an exposure method using the illumination device according to the present invention, wherein the mask is illuminated with illumination light from the illumination device, and an image of the pattern of the mask is projected via a projection optical system. The substrate is exposed. According to such an exposure method of the present invention, since the illumination device of the present invention is used, a plurality of types of pattern regions can be simultaneously illuminated under optimal illumination conditions, and an image of the pattern on the mask is placed on the substrate. Exposure can be performed with high accuracy and high throughput.

Next, a method of manufacturing a projection exposure apparatus according to the present invention includes the illumination device of the present invention, a mask stage on which a mask as an illuminated object is mounted, a projection optical system, and a substrate onto which a pattern of the mask is transferred. And a substrate stage for positioning the components in a predetermined positional relationship. Further, a device manufacturing method according to the present invention is a device manufacturing method for manufacturing a predetermined device using the lighting device of the present invention, wherein the mask is illuminated with illumination light from the lighting device. An image of a mask device pattern is transferred onto a device substrate via a projection optical system. According to the device manufacturing method of the present invention, since the illumination device of the present invention can simultaneously illuminate a plurality of types of pattern regions under optimal illumination conditions, an image of the device pattern on the mask can be used for the device. High-throughput transfer can be performed on a substrate with high precision, and a high-performance device can be manufactured with a higher throughput. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a schematic configuration diagram showing a projection exposure apparatus used in the first embodiment of the present invention. FIG. 2 is an enlarged view of the fly-eye lens 5 in FIG. FIG. 3 is a perspective view showing reticle 10 in FIG. FIG. 4 is an enlarged view of the fly-eye mask 4 in FIG. FIG. 5 is a diagram showing illumination light that has passed through the lens element at the center of the fly-eye lens. FIG. 6 is a diagram showing illumination light that has passed through a lens element at the periphery of a fly-eye lens. FIG. 7 is an explanatory diagram in the case where a fly-eye mask is provided on the lens element in the peripheral part of FIG. FIG. 8 is a diagram showing a state in which the light beams of FIGS. 5 and 7 are superimposed. FIG. 9 is a diagram showing a state in which a plurality of illumination conditions are obtained on a reticle by the fly-eye mask 4 in FIG. . FIG. 10 is a simplified configuration diagram showing an illumination optical system according to the second embodiment of the present invention. FIG. 11 is a simplified configuration diagram showing an illumination optical system according to the third embodiment of the present invention. FIG. 12 is a diagram showing the illuminance distribution of the illumination light on the incident surface of the fly-eye mask and the incident surface of the full lens according to the fourth embodiment of the present invention. Figure 13 shows FIG. 16 is a perspective view showing a reticle 10A exposed by a projection exposure apparatus according to a fifth embodiment of the present invention. FIG. 14 is a diagram showing a fly-eye mask 4B and a fly-eye lens 5A used in the projection exposure apparatus according to the fifth embodiment. FIG. 15 is a schematic configuration diagram showing a projection exposure apparatus according to a sixth embodiment of the present invention. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. In the following embodiments, the present invention is applied to an illumination optical system of a projection exposure apparatus.

[First Embodiment]

FIG. 1 shows a projection exposure apparatus used in the first embodiment. In FIG. 1, an illumination light IL for exposure emitted from an exposure light source 2 is substantially transmitted through an input lens 3. After being converted into a parallel light beam, it is incident on a fly-eye lens 5 as a secondary light source forming optical system via a fly-eye mask 4 corresponding to the filter of the present invention. As the exposure light source 2, a mercury lamp or the like that generates an emission line such as an i-line can be used, but in order to enhance the resolution, KrF (wavelength 248 nm) or ArF (wavelength 193 nm) excimer Male one laser light source and the like, F ₂ laser light source (wavelength 1 5 7 nm), or a r ₂ laser light source les Shi desirable to use a shorter wavelength light source (wavelength 1 2 6 nm), etc. ^ Note As an optical system for forming a secondary light source, an optical integra (homogenizer), that is, the above-described fly-eye lens or a rod integra can be used.

The fly-eye mask 4 of the present example is arranged on the installation surface P 1 close to the entrance surface of the fly-eye lens 5. Although not shown, the fly-eye mask 4 is a fly-eye mask that can perform two-dimensional positioning on the installation surface P1. The mask is held by suction on the stage. A surface light source (secondary light source) composed of a large number of light source images (pseudo light sources) is formed on the exit surface of the fly-eye lens 5 corresponding to a large number of lens elements constituting the fly-eye lens 5. An aperture stop (hereinafter, referred to as “aperture stop”) 6 is arranged on the exit surface. The illumination light IL that has passed through the aperture of the σ stop 6 is once collected on the variable field stop (reticle blind) 8 by the first relay lens 7 、, and the illumination light IL that has passed through the opening of the variable field stop 8 is The illuminated area 20 of the reticle 10 P2 (lower surface) P2 is illuminated via the second relay lens 7B and the condenser lens 9. At this time, the entrance surface of the fly-eye lens 5 is optically conjugate with the arrangement surface of the field stop 8 and the pattern surface P 2 of the reticle 10, and the installation surface P 1 of the fly-eye mask 4 is It is almost conjugate with the plane P2. The arrangement surface of the σ stop 6 (the exit surface of the fly-eye lens 5) is optically Fourier transformed with respect to the pattern surface Ρ2, and is substantially equivalent to the pupil surface 面 3 of the projection optical system 11 described later. Conjugate. The illumination optical system of this example is composed of the optical members from the exposure light source 2 to the condenser lens 9. The illumination optical system is housed in a box-shaped illumination chamber 1 to prevent the illumination light IL from leaking outside. Of course, the illumination chamber 1 may be composed of a plurality of housings, or a light source may be arranged separately from the illumination chamber 1.

In this example, as described later, the fly-eye mask 4 is provided so as to optimize the illumination conditions for the pattern formed on the reticle 10 to be exposed. In this case, in the normal exposure step, exposure is performed while exchanging the reticle. Therefore, when the reticle 10 is exchanged with the next reticle, the optimal illumination condition changes. Therefore, a fly reticle corresponding to the filter changing apparatus of the present invention is provided so that an optimum fly eye mask can be installed on the installation surface # 1 according to the reticle to be exposed or the pattern to be exposed in the reticle. An exchange mechanism is provided.

That is, a fly-eye mask 'library 21' containing various fly-eye masks 23 3, 23 3,-"23G is installed on the side of the illumination chamber 1, and the fly-eye mask 'library 21' and the illumination chamber A flyer mask / loader 22 is installed between the main unit 1 and a main control system 16 that controls the overall operation of the apparatus. The fly-eye mask that can set the optimum lighting conditions according to the target pattern is specified, and the fly-eye mask / mouth 22 changes the specified fly-eye mask to the fly-eye mask, library 2 Take it out from 1 and set it on the installation surface Ρ 1. At this time, the fly eye mask of the replaced fly eye mask is installed by a fly eye mask (not shown) with the installation surface P1 as the mounting surface. The position of the fly eye lens 5 may be replaced with another fly eye lens at the same time when the shape of the illumination area on the reticle changes. You may do so.

Under the illumination light IL, an image of the pattern in the illumination area 20 of the reticle 10 is projected via the projection optical system 11 at a projection magnification 3 (| 3 is, for example, 1/4, 1/5, etc.), It is projected onto the surface of a wafer 12 such as a semiconductor wafer coated with a photoresist. An aperture stop (not shown) is provided on a pupil plane P3 which is an optical Fourier transform plane with respect to the pattern plane P2 of the reticle 10 in the projection optical system 11. Hereinafter, the Z axis is taken parallel to the optical axis AX of the projection optical system 11, and the X axis is taken parallel to the plane of Fig. 1 in a plane perpendicular to the Z axis, and the Y axis is taken perpendicular to the plane of Fig. 1. explain.

At this time, reticle 10 is held on reticle stage 13, and reticle stage 13 positions reticle 10 two-dimensionally on reticle base 14. On the other hand, the wafers 12 are moved through a wafer holder (not shown). The wafer stage 17 is held on the wafer stage 17. The wafer stage 17 moves the wafer 12 stepwise in the X direction and the Y direction on the wafer base 18 and controls the position of the wafer 12 in the Z direction. The surface of the wafer 12 is adjusted to the image plane of the projection optical system 11 by the focus method. The reticle stage drive system 15 and the wafer stage drive system 19 measure the position and rotation of the reticle stage 13 and the wafer stage 17 using an internal laser interferometer, respectively. The measurement results and the main control system 16 The operation of the reticle stage 13 and the operation of the wafer stage 17 are controlled in accordance with the control information from the CPU. At the time of exposure, when the exposure of the pattern image of the reticle 10 onto one shot area on the wafer 12 is completed, the next shot area of the wafer 12 is moved by the step movement of the wafer stage 17 so that the projection optical system 11 1 The operation of moving to the exposure field and exposing the pattern image of the reticle 10 is repeated in a step-and-repeat manner.

When exposing the pattern image of the reticle 10 to each shot area on the wafer 12 as described above, the illumination conditions for the reticle 10 are optimized by the fly-eye mask 4 and the fly-eye lens 5. Hereinafter, optimization of the illumination conditions in this example will be described.

First, FIG. 2 shows an enlarged view of the fly-eye lens 5 of FIG. 1 as viewed from the σ stop 6 side. In FIG. 2, the directions corresponding to the X direction and Υ direction of FIG. , Υ direction. The fly-eye lens 5 is formed by arranging a large number of lens elements 5a having a cross-sectional shape with a width dX in the X direction and a width dY in the Y direction in close contact in the X and Y directions. In this example, the width dX is approximately equal to the width dY. In addition, since the illumination light emitted from the region within the substantially circular aperture 6a of the σ stop 6 installed on the exit surface of the fly-eye lens 5 is used effectively, the aperture 6a in FIG. The area outside of is shaded. Next, FIG. 3 shows the reticle 10 of FIG. 1. In FIG. 3, an original pattern for transfer is formed in a substantially square pattern area 31 on the pattern surface P2 of the reticle 10, and at the time of exposure, Illumination light is applied to an illumination area 20 set to surround the pattern area 31. The pattern region 31 in this example is divided into two partial pattern regions 31a and 3lb having widths substantially equal in the X direction, and each of the partial pattern regions has a forming condition (for example, fineness (line width, pitch) Etc.), patterns having different directions (longitudinal direction, periodic direction, etc.), presence / absence of a phase shift portion, etc.) are formed. That is, in this example, a high-density pattern having a small line width such as a gate pattern of a DRAM is formed in the first partial pattern region 31a, and a contact is formed in the second partial pattern region 31b. It is assumed that isolated patterns such as holes are formed in a predetermined arrangement. In this case, the optimal illumination condition of the first partial pattern area 31a is to illuminate with illumination light ILa having a large opening angle Φa, that is, illumination light having a large coherence factor (so-called σ value). The optimal illumination condition for the second partial pattern area 31b is to illuminate with illumination light ILb having an opening angle φb smaller than φa, that is, illumination light having a small σ value. Therefore, in this example, the illumination area 20 is divided into two parts in accordance with the partial pattern areas 31a and 31b, and the partial pattern area 31a is illuminated with the illumination light ILa having a large σ value. By illuminating 31b simultaneously with the illumination light ILb having a small value, the illumination conditions are optimized simultaneously for each of the partial pattern regions 31a and 3lb. The magnitude of the illumination light is determined by the pupil plane P 3 of the projection optical system 11 shown in FIG. 1, which is the optical Fourier transform plane with respect to the pattern plane P 2 of the reticle 10, or the exit plane of the fly-eye lens 5. Therefore, optimizing the illumination condition (here, the σ value) for each of the sub-pattern regions 31a and 31b depends on the optical Fourier corresponding to them, since the diameter of the passage area of the illumination light becomes large or small. Means to independently control the distribution of illumination light on the conversion surface I do. In order to optimize the σ value of the illumination light for each of the partial pattern areas 31a and 3lb, a fly-eye mask 4 is provided as shown in FIG. Here, it is assumed that the optimum σ value of the partial pattern area 31b is about 1 ノ 2 of the optimum σ value of the partial pattern area 31a.

The fly-eye mask 4 shown in FIG. 1 has a light-shielding film (for example, chromium (Cr)) (or a light-reducing film (semi-transmissive film)) formed on the surface of a glass substrate that transmits the illumination light IL with a predetermined distribution. Thus, a predetermined transmittance distribution is provided. The fly-eye mask 4 may be formed by providing openings on a light shielding plate such as a metal plate with a predetermined distribution.

FIG. 4 shows a view of the fly-eye mask 4 of FIG. 1 in the direction of the fly-eye lens 5. In FIG. 4, the fly-eye mask 4 is a lens element 5 a of the fly-eye lens 5 of FIG. In accordance with the array, it is divided into a large number of fill elements 4a with a width dX in the X direction and a width dY in the Y direction, and a predetermined transmittance distribution can be given independently for each fill element 4a. It is composed of In this case, since the installation surface P1 of the fly-eye mask 4 is almost conjugate with the pattern surface P2 of the reticle 10, each filter element 4a has two partial pattern regions 3 1a in FIG. , 31b are divided into two partial filter elements, and the transmittances of these two partial filter elements are set to predetermined values independently of each other.

Then, in a substantially circular area in the center of the fly-eye mask 4, the transmittance of the two partial fill elements is 1 (10) as represented by the fill element 34 on the central optical axis. 0%), and within the ring-shaped area surrounding the center, the transmittance of the right partial filter element is set to 0, as represented by the filter element 35 in the middle, and the left partial filter is set. The transmittance of the evening element is set to 1. A transmittance of 1 means the transmittance of the glass substrate itself when a glass substrate is used as the fly-eye mask 4. You. The width of the substantially circular area at the center, which is composed of filter elements (filter elements 34, etc.) with a transmittance of 1 on the entire surface, is set to about 1/2 of the entire width of the fly-eye mask 4. In the hatched area outside the aperture 6 a of the σ stop 6, the transmittance of each fill element of the fly-eye mask 4 is set in the same manner as, for example, the fill element 35.

Next, the lens elements of the fly-eye lens 5 of FIG. 2 corresponding to the filter elements 34 and 35 of FIG. 4 are referred to as lens elements 32 and 33, respectively. The operation of 4 and fly-eye lens 5 will be described. In FIGS. 5 to 9, the optical system from the first relay lens 7A to the condenser lens 9 in FIG. 1 is simply represented by one condenser lens 36. Also, because the variable field stop 8 and the like are omitted, for example, as shown in FIG. 7, the positional relationship between the partial pattern areas 31 a and 31 b of the reticle 10 is opposite to that in FIG. .

First, FIG. 5 shows illumination light passing through the central lens element 32 of the fly-eye lens 5. In FIG. 5, the illumination light IL from the exposure light source 2 is converted into a parallel light beam by the input lens 3. The light enters the lens element 32. The illumination light converged on the arrangement surface of the diaphragm 6 (hereinafter referred to as the “aperture surface”) 27 by the lens element 32 spreads geometrically optically after passing through the diaphragm surface 27, and the condenser lens 3 6 The light is again converted into parallel light and is incident on the reticle 10. As can be seen from FIG. 5, the light emitted from one lens element 32 illuminates the entire reticle at the same angle of incidence.

Next, FIG. 6 shows the illumination light IL passing through the lens element 33 around the fly-eye lens 5 (however, without the fly-eye mask 4). Similarly, the illumination light IL emitted from the lens element 33 covers the entire surface of the pattern area 31 of the reticle 10. Illuminate in parallel. However, the illumination light emitted from the lens elements 32 and 33 has mutually different incident angles with respect to the reticle 10. In this manner, the illumination light emitted from each lens element of the fly-eye lens 5 illuminates the reticle 10 as a parallel light beam at an incident angle determined by the positional relationship between the lens element and the condenser lens 36 that have passed therethrough. . In other words, at each point in the pattern area 31 of the reticle 10, one light beam is incident from each lens element that constitutes the fly-eye lens 5, and each light beam passes through the incident angle. Is determined by the lens element.

On the other hand, in this example, a fly-eye mask 4 composed of a large number of filter elements is provided, and the transmittance of the filter element 34 corresponding to the lens element 32 in FIG. On the other hand, as shown in FIG. 7, the filter element 35 corresponding to the lens element 33 has a partial filter element 35 a having a transmittance of 1 and a partial filter element 35 b having a transmittance of 0 (light shielding). It is divided into As described above, since the incident surface of the fly-eye lens 5 and the pattern surface of the reticle 10 are designed to have an optically conjugate relationship, the partial filter element 3 5 Only the partial pattern area 31 a that is conjugate to a is illuminated with the illumination light IL.

FIG. 8 shows a state in which FIGS. 5 and 7 are combined. In FIG. 8, the first partial pattern area 31 a of the reticle 10 receives illumination light from both the lens elements 32 and 33. Then, only the illumination light from the central lens element 13 is incident on the second partial pattern area 31. By applying a mask having a different transmittance distribution to each lens element constituting the fly-eye lens 5 in this manner, it is possible to make the illumination conditions at each position in the pattern area of the reticle 10 different. As shown in FIG. 4, each fill element 4a of the fly-eye mask 4 of this example is Since it is either element 34 or 35, the state of the illumination light IL that enters the reticle 10 through the fly-eye mask 4 and the fly-eye lens 5 is as shown in FIG.

In FIG. 9, at the center of the fly-eye mask 4, all the illumination light enters the fly-eye lens 5, and at the periphery of the fly-eye mask 4, the illumination light enters the fly-eye lens 5 only at the left side of each filter element. Since the light is incident, the σ value of the illumination light ILb incident on the second partial pattern area 31b of the reticle 10 is equal to the σ of the illumination light ILa incident on the first partial pattern area 31a. The value is about 1 Z 2. For this reason, it can be seen that by using the fly-eye mask 4 of this example, the partial pattern regions 31a and 31b of the reticle 10 are illuminated under optimal illumination conditions. Therefore, the image of the pattern in each partial pattern area 31a, 31b is transferred onto the wafer 12 at a high resolution via the projection optical system 11 of FIG.

When the type of pattern formed on the reticle 10 is different, the optimum illumination condition also changes. Accordingly, the optimum fly-eye mask is selected from the fly-eye mask / library 21 shown in FIG. Just select it.

The fly-eye mask 4 in this example generates two types of illumination light having different σ values, but in addition to this, annular illumination in which the illumination light passes through an annular area on the pupil plane Ρ3 in FIG. Line aperture illumination where the illumination light passes through a slit-shaped area on its pupil plane # 3, or off-axis aperture illumination where the illumination light passes through an area where the illumination light is decentered with respect to the optical axis on its pupil plane # 3 It is also possible to use them together.

[Second embodiment]

A second embodiment of the present invention will be described with reference to FIG. The projection exposure apparatus of this example is almost the same as the projection exposure apparatus of the first embodiment, except that an illuminance distribution correction member having a predetermined transmittance distribution is provided on the reticle 10. Therefore, the portions in FIG. 10 corresponding to FIG. 9 are denoted by the same reference numerals, and detailed description thereof will be omitted.

Usually, the same photoresist is applied to the entire surface of the wafer 12 in FIG. 1, and the optimum integrated exposure amount of the illumination light IL is almost the same over the entire exposure region of the wafer 12, so that the reticle 10 It is desirable that the illuminance distribution of the illuminating light IL in the pattern area is uniform. On the other hand, in the first embodiment, as shown in FIG. 9, if the illuminance distribution of the illumination light IL incident on the fly-eye mask 4 is uniform, the first partial pattern region 3 The illuminance of the illumination light within 1a is about four times higher than the illuminance within 3 lb of the second partial pattern area. Therefore, in order to obtain a uniform integrated exposure amount at each point on the wafer 12, an area conjugate to the first partial pattern area 31 a is used during the exposure, for example, by using the variable field stop 8 in FIG. It is necessary to perform an operation of shielding light for only 3/4 of the entire exposure time. However, if such opening / closing operation of the variable field stop 8 is performed during exposure, exposure control becomes complicated. In order to prevent such complicated exposure control, in this example, an illuminance distribution correction member for making the illuminance distribution uniform on the reticle 10 is provided.

FIG. 10 shows a simplified illumination optical system of the projection exposure apparatus according to the second embodiment. In FIG. 10, a first partial pattern area 31 a on the upper surface of the reticle 10 is shown. On a half surface including a region overlapping with, a low transmittance film 37 as an illuminance distribution correction member is provided. At this time, as shown in FIG. 4, the fly-eye mask 4 has a region composed of a filter element that transmits light over the entire central area, as compared with the width of the annular zone composed of the filter element whose right half is covered. Since the width of the region is about 1/2, in FIG. 10, the illuminance of the illumination light ILa is about four times that of the illumination light ILb. Therefore, the transmittance of the film 37 is set to 0.25 (25%). As a result, the illuminances in the partial pattern areas 31a and 31b are equal to each other, so that the pattern of the reticle 10 By irradiating the entire surface of the region with the illumination light for a predetermined exposure time, the same optimum integrated exposure amount can be obtained at each point of the corresponding exposure region on the wafer. Instead of providing the film 37 on the upper surface of the reticle 10, a film 37 may be formed on the pattern surface of the reticle 10, and furthermore, a surface conjugate to the reticle pattern surface in the illumination optical system or A mask (illuminance distribution correction member) having the same (similar) transmittance distribution as that of the film 37 may be arranged in the vicinity thereof, for example, near the arrangement surface of the variable field stop 8 in FIG.

[Third Embodiment]

In the second embodiment described above, by providing the reticle 10 with an illuminance distribution correction member having a predetermined transmittance distribution, the illumination light on the reticle, that is, the entire illumination area on the reticle 10 is exposed to illumination light. In this example, the fly-eye mask 4 itself is provided with a transmittance distribution for correcting the illuminance distribution, thereby making the illuminance constant over the entire exposure area.

FIG. 11 is a simplified view of the illumination optical system of the projection exposure apparatus of the present embodiment. In FIG. 11, in which parts corresponding to FIG. 8 are denoted by the same reference numerals, in FIG. 11, lens elements 32 and 33 of the fly-eye lens are shown. Filling elements 34 A and 35 A are arranged on the incident surface, respectively. The filter elements 34A and 35A correspond to the partial filter elements 34a, 34b and 35c, respectively, corresponding to the partial pattern areas 31a and 3lb of the reticle 10. 35b, and the transmittances of the partial fill elements 34b and 35b are set to 1 and 0, respectively, as in the example of FIG. Further, the transmittance of the partial fill areas 34a and 35c corresponding to the partial pattern area 31a of the reticle 10 is set to 0.25 (25%). That is, in the fly-eye mask of this example, the transmittance of 0.25 was given to the left half of each filter element 4a of the fly-eye mask 4 in FIG. 4 (this corresponds to the "illuminance distribution correction member"). Things. In this way, the illuminance of the illumination light ILa incident on the partial pattern area 31a of the reticle 10 is reduced to about 1/4 of the illuminance of the illumination light ILb incident on the partial pattern area 31b. However, since the number of lens elements that emit the illumination light ILa is about four times the number of lens elements that emit the illumination light ILb, the illuminance of the illumination light in the partial pattern areas 31a and 31b Are approximately equal to each other. In this example, the fly-eye mask and the illuminance distribution correction member are formed integrally, that is, formed on the same member. However, they may be formed on different members and arranged close to each other.

[Fourth embodiment]

In the above-described second and third embodiments, basically, in the area where the illuminance of the illumination light is large, light is absorbed in the middle of the optical path in accordance with the area where the illuminance is small, and the illuminance is balanced. Therefore, when the σ value is significantly different between a plurality of partial pattern regions, the light amount loss is large. If the loss of light quantity becomes large in this way, the illuminance on the wafer will decrease, and it will be necessary to lengthen the exposure time (or increase the number of pulsed lights) in order to obtain an appropriate exposure amount, and the throughput will increase. Will decrease. Therefore, in the fourth embodiment, referring to FIGS. 12A and 12B, an example will be described in which even when a fly-eye mask is used, the light intensity loss can be reduced and the illuminance of the illumination light can be made uniform over the entire exposure area. I do.

FIGS. 12 (b) and 12 (d) show the fly-eye mask 4A and the fly-eye lens 5 of this example, respectively. The projection exposure apparatus of this example basically uses the fly-eye mask 4A of FIG. It is configured to be installed instead of 4. The fly-eye mask 4A has a partial filter region 38A with a transmittance of 1 and a partial filter region with a transmittance of 0, similarly to the fly-eye mask of the third embodiment in FIG. It is composed of a combination of 38 B and a partial fill region 38 C whose transmittance is between 0 and 1. In this example, as in the third embodiment, in order to make the illuminance uniform in the reticle pattern area, the intensity of the illumination light incident on the area having a large σ value is reduced to the area having a small σ value. It must be smaller than the intensity of the incident illumination light. For this purpose, assuming that the distribution of the σ value of the illumination light on the pattern surface of the reticle is the same as that in the first embodiment, the light enters the fly-eye lens 5 after passing through the fly-eye mask 4 mm. As shown in Fig. 12 (c), the illuminance distribution of the illuminating light immediately before the lighting needs to be higher at the center and lower at the periphery. Note that the horizontal axis in FIG. 12 (c) and FIG. 12 (a) described later are coordinates in the arrangement direction of the fly-eye lenses 5.

If illuminating light of approximately the same illuminance is supplied to the fly-eye mask 4A in this state over the entire surface, the amount of light loss will increase as a whole, so in this example, as shown by the curve 43 in FIG. First, the illuminance distribution of the illumination light at the stage of entering the fly-eye mask 4A is set to be higher at the center and lower at the periphery. That is, the illuminance distribution at the stage of incidence on the fly-eye mask 4A is set as close as possible to the envelope of the illuminance distribution at the stage of incidence on the fly-eye lens 5 (FIG. 12 (c)). When the exposure light source 2 in FIG. 1 is a laser light source, the intensity distribution in the cross section of the illumination light immediately after being emitted from the exposure light source 2 becomes a Gaussian distribution, and the intensity at the center becomes large. For example, by configuring the input lens 3 with a plurality of optical members, it is possible to easily obtain an illuminance distribution as shown in FIG. Also, even when an illuminance distribution different from that shown in Fig. 12 (a) is required, it is necessary to change the optical system from the exposure light source 2 to the fly-eye mask, with little loss of light. Illuminance distribution can be obtained.

Furthermore, absorption by the fly-eye mask 4A shown in FIG.

By shaping the illuminance distribution of Fig. 2 (a) into the illuminance distribution of Fig. 12 (c), The target illumination condition can be obtained on the reticle. At this time, in this example, since the illuminance distribution is corrected at the stage of entering the fly-eye mask 4A, the amount of illumination light absorbed by the fly-eye mask 4A is reduced in the second and third embodiments. Can be smaller than Therefore, the light quantity loss of the illumination light is reduced, and the illuminance on the wafer can be increased, so that the throughput of the exposure step can be made higher than that of the second and third embodiments. . A part of the optical system (at least one optical element) located closer to the light source than the fly-eye mask is made movable, and the movement changes the illuminance distribution of the illumination light incident on the fly-eye mask. You may do so.

[Fifth Embodiment]

In the above embodiment, the present invention is applied to a stepper type projection exposure apparatus. In this embodiment, the present invention is applied to a step-and-scan type projection exposure apparatus which is an example of a scanning exposure type. Applies to the illumination optical system of exposure equipment. The projection exposure apparatus used in this case is the same as that shown in FIG. 1, except that the projection magnification of the projection optical system 11 is applied to the reticle stage 13 and the wafer stage 17 in a predetermined scanning direction (the Y direction). The function of synchronous scanning as a speed ratio is further added. The reticle of this example is the reticle 10OA of FIG. 13, and the fly-eye mask and the fly-eye lens are the fly-eye mask 4B and the fly-eye lens 5A of FIG. 14, respectively.

First, as shown in FIG. 13, the pattern area 39 of the reticle 10A to be exposed in this example has three partial pattern areas 39 each having the same width in the X direction orthogonal to the scanning direction. a, 39b, and 39c. In the first partial pattern area 39a, a line-and-space pattern having a line width approximately equal to the resolution limit of the projection optical system 11 is formed at a predetermined pitch in the X and Y directions. Isolated in the second partial pattern area 39b A target pattern is formed, and a dense pattern is formed in the third partial pattern region 39c. In this case, the optimal illumination conditions in the partial pattern areas 39a, 39b, and 39c are, respectively, illumination with the annular illumination light ILc, illumination with the illumination light ILd having a small value, and It is to illuminate with the illumination light IL e having a large value. At the time of scanning exposure, a part of the pattern area 39 is illuminated by an elongated illumination area 40 having a width dX1 in the X direction and a width dY1 in the Y direction (for example, about 1X3 of dXl). By scanning in the Y direction against 40, the pattern area

39 images are sequentially transferred onto the screen.

Therefore, the illumination region 40 is divided into three partial illumination regions 40a to 40c having the same width in the X direction corresponding to the partial pattern regions 39a to 39c, and the first partial illumination region 40a is divided into three. Zonal lighting and second partial lighting area

40b is illuminated with illumination light having a small σ value, and the third partial illumination area 40c is illuminated with illumination light having a large σ value. In order to achieve such illumination conditions, each filter element 4Ba constituting the fly-eye mask 4 in FIG. 14 is divided into three in the X direction, and the filter elements are independently provided in the three divided partial filter elements. What is necessary is just to give a fixed transmittance. The X and Y directions in FIG. 14 correspond to the X and Y directions in FIG.

In FIG. 14, the fly-eye lens 5A is configured such that a large number of elongated lens elements 5A a having a width dX2 in the X direction and a width dY2 in the Y direction are closely adhered and arranged in the X and Y directions. . In this case, the incident surface of the fly-eye lens 5A is conjugate with the pattern surface of the reticle 1OA, and in order to enhance the illumination efficiency, the cross-sectional shape of the lens element 5Aa and the illumination area 40 of the reticle 10A Are similar. Therefore, the following equation holds.

dX l: dY l = dX2: dY 2

The fly-eye mask 4B is also used for each lens of the fly-eye lens 5A. Corresponding to the element 5 Aa, it is composed of a number of fill elements 4 Ba having a width dX2 in the X direction and a width dY2 in the Y direction. Also in this example, the area inside the circular aperture 6b of the σ stop is the area to be used effectively.

In the present example, in order to obtain the illumination condition of FIG. 13, in the approximately circular center of the fly mask 4B of FIG. 14, the partial illumination area 40a, Set the transmittances of the partial fill elements 4 la, 41 b, and 41 c corresponding to 40 b and 40 c to 0, 1, and 1, respectively. In addition, at the substantially annular zone peripheral portion of the fly-eye mask 4B, as shown by the fill element 42, typically, the partial fill elements 42a, 42c corresponding to the partial illumination areas 40a, 40b, 40c are formed. Set the transmittance of b, 42 c to 1, 0, 1 respectively. As a result, in the partial illumination regions 40a, 40b, and 40c in FIG. 13, annular illumination, illumination with a small σ value, and illumination with a large σ value are performed, respectively. Despite the fact that three different types of partial pattern areas are formed, only one scan exposure is required to achieve high throughput, and the images of these three types of partial pattern areas can be precisely formed on the wafer. It can be transferred to each shot area.

[Sixth embodiment]

In the above-described embodiment, since the fly-eye mask 4 or the like having a light-shielding film formed on a glass substrate or a light-shielding plate having an opening is used, a different fly-eye mask pattern is required. Requires a physical replacement of the fly-eye mask. Therefore, in this example, the fly-eye mask is made of a liquid crystal panel or the like, and the distribution of the transmission part and the light-shielding part is formed by electrical control of the fly-eye mask, thereby eliminating the need to replace the fly-eye mask. I have.

FIG. 15 shows the projection exposure apparatus of this example. The projection exposure apparatus of FIG. 15 uses the fly-eye mask 4 of FIG. It is replaced with a masking liquid crystal panel 25, and the other configuration is the same. In this example, when information about the pattern of the fly-eye mask determined according to the pattern of reticle 10 is input to controller 24, the transmittance distribution of LCD panel 25 for fly-eye mask is specified according to the signal from controller 24. (For example, the transmittance distribution of the fly-eye mask 4 in FIG. 4). When exposing another reticle, the transmittance distribution of the fly-eye mask liquid crystal panel 25 is switched by switching a signal from the controller 24. Thus, a desired fly-eye mask pattern can be set at high speed without performing a mechanical replacement operation.

In each of the above-described embodiments, the aperture of the aperture stop (σ stop 6) disposed at or near the pupil plane of the illumination optical system, for example, near the exit surface of the fly-eye lens is circular. The shape may be arbitrary, and may be, for example, a rectangle. Further, the aperture shape may be defined according to the arrangement of a plurality of lens elements constituting the fly-eye lens 5 so that a light source image is not formed at the aperture edge. Further, the σ stop 6 may be a variable stop (iris stop or the like) whose aperture diameter is variable, or may be a simple external stop that defines the numerical aperture (maximum value) of the illumination optical system.

Further, in each of the above-described embodiments, the fly-eye mask is of a transmission type. However, for example, when the fly-eye lens 5 is formed of a reflective element, the fly-eye mask may be of a reflection type. That is, the transmittance distribution in the present specification includes the reflectance distribution.

The application of the projection exposure apparatus of the above embodiment is not limited to an exposure apparatus for semiconductor manufacturing. For example, a projection exposure apparatus for a liquid crystal for exposing a rectangular glass plate to a liquid crystal display element pattern. And manufactures plasma displays, imaging devices (such as CCDs), or thin-film magnetic heads. Can be widely applied to projection exposure apparatuses.

In addition, when a reticle or a mask used in an exposure apparatus for manufacturing a device for manufacturing a semiconductor element or the like is manufactured using an optical exposure apparatus using, for example, far ultraviolet light (DUV light) or vacuum ultraviolet light (VUV light). Also, the projection exposure apparatus of the above embodiment can be suitably used.

In addition, a single-wavelength laser in the infrared or visible range oscillated from a DFB semiconductor laser or a fiber laser as illumination light for exposure may be used, for example, by using Erbium (Er) (or both Erbium and Ytterbium (Yb)). ) May be amplified by a doped fiber amplifier and a harmonic converted to ultraviolet light using a non-linear optical crystal may be used. For example, if the oscillation wavelength of a single-wavelength laser is in the range of 1.544 to 1.553 m, the 8th harmonic in the range of 193 to 194 nm, that is, almost the same as the ArF excimer laser Assuming that the wavelength of ultraviolet light is obtained and the oscillation wavelength is in the range of 1.57 to 1.58 / zm, the 10th harmonic in the range of 157 to 158 nm, that is, the F ₂ laser Ultraviolet light having substantially the same wavelength can be obtained.

Note that if using a deep UV excimer laser or the like as illumination light for exposure, quartz (S i O 2) as a glass material, such as a projection optical system and fluorite (C a F ₂₎ transmits far ultraviolet rays such as Material is used. Further, the magnification of the projection optical system is not limited to the reduction system, and may be any of the same magnification and the enlargement system.

Further, the projection optical system may be any of a refractive system, a reflective system, and a catadioptric system (power dioptric system) configured by combining a refractive lens and a reflective optical element such as a concave mirror. As a catadioptric system, for example, as disclosed in US Pat. No. 5,788,229, a plurality of dioptric elements and two catadioptric elements (at least one of which is a concave mirror) extend in a straight line without being bent. An optical system arranged on the optical axis can be used. In addition, as far as the designated country specified in the international application or the domestic laws of the selected selected country allow, The disclosure of this US patent is incorporated herein by reference.

In addition, the illumination optical system (including fly-eye mask and library) and the projection optical system of the above-described embodiment and the projection optical system are incorporated into the exposure apparatus main body to perform optical adjustment, and a reticle stage and a wafer stage including a large number of mechanical parts are provided. The projection exposure apparatus according to the present embodiment can be manufactured by attaching wires and pipes to the exposure apparatus main body, and performing overall adjustment (electrical adjustment, operation confirmation, and the like). It is desirable to manufacture the projection exposure apparatus in a clean room where the temperature, cleanliness, etc. are controlled.

In the semiconductor device, a step of designing the function and performance of the device, a step of manufacturing a reticle based on this step, a step of manufacturing a fly-eye mask according to the reticle (pattern), Manufacturing a wafer from the silicon material in the form, exposing the reticle pattern to the wafer using the projection exposure apparatus of the above-described embodiment, assembling the device (including a dicing step, a bonding step, and a package step), and inspecting the wafer. It is manufactured through steps and the like. It should be noted that the present invention is not limited to the above-described embodiment, and it is needless to say that various configurations can be adopted without departing from the gist of the present invention. Further, all disclosures, including the specification, claims, drawings, and abstract, of Japanese Patent Application No. 10—23 1 499, filed August 18, 1998, are as follows: , And are incorporated here as they are. Industrial applicability

According to the illumination device of the present invention, since a filter having a predetermined transmittance distribution is provided, when a plurality of different types of pattern areas are formed on a mask (reticle), There is an advantage that the pattern area can be illuminated substantially simultaneously under the optimal illumination conditions. Further, according to the first or second projection exposure apparatus of the present invention, the illumination apparatus of the present invention or the optical member for independently setting the intensity distribution of the illumination beam on the Fourier transform plane for each illumination condition is provided. Therefore, there is an advantage that images of a plurality of types of pattern areas on the mask can be exposed at a high throughput by a single exposure operation. In addition, since the optimal illumination conditions can be set for each of the patterns in the plurality of types of pattern regions, the overall exposure margin can be increased, and the yield of the finally manufactured device can be improved.

Further, according to the exposure method of the present invention, it is possible to simultaneously illuminate a plurality of types of pattern regions under optimum illumination conditions, respectively, and to form an image of a pattern on the mask on the substrate with high accuracy and high throughput. Can be exposed.

Further, according to the device manufacturing method of the present invention, an image of a device pattern on the mask can be transferred onto a substrate for the device with high accuracy and high throughput, and higher performance and higher performance can be achieved. Devices can be manufactured.

Claims

The scope of the claims

1. A light source system that supplies illumination light, a light source image forming optical system that forms a plurality of light source images from the illumination light from the light source system, and a light-receiving surface that collects light beams from the plurality of light source images. A condenser optical system for illuminating the above pattern in a superimposed manner,

A filter is disposed on an installation surface at or near an optically conjugate position with respect to the irradiation surface,

The filter is divided into a plurality of regions respectively corresponding to the plurality of light source images, and the plurality of regions are provided with a filter element having a transmittance distribution independent of each other.

The transmittance distribution of each of the plurality of filter elements is determined on an optical Fourier transform surface for each of the pattern regions according to a plurality of different types of pattern regions constituting the pattern on the irradiation surface. A lighting device characterized in that the light intensity distributions are set so as to be set to a predetermined distribution independently of each other.

2. A plurality of the filters are provided according to a plurality of patterns sequentially arranged on the irradiation surface,

A filter exchange device for selecting a filter corresponding to a pattern on the irradiation surface from among the plurality of filters, and arranging the selected filter on the installation surface is provided. The lighting device according to 1.

3. The fill filter is a transmittance distribution variable filter that can electrically independently switch the transmittance distributions of the plurality of fill elements, and the transmittance distribution variable filter is the illuminated surface. 2. The lighting device according to claim 1, wherein the transmittance distribution of the plurality of filter elements is switched according to the above pattern.

4. To correct unevenness of the illuminance distribution on the irradiated surface due to the filter at a position near the irradiated surface, or at a position optically conjugate to the irradiated surface or in the vicinity thereof. 4. The lighting device according to claim 1, wherein an illuminance distribution correction member having a predetermined transmittance distribution is disposed.

5. The lighting device according to any one of claims 1 to 3, and

A mask stage on which a mask as an object to be illuminated is mounted, a projection optical system, and a substrate stage for positioning a substrate onto which a pattern of the mask is transferred,

A projection exposure apparatus, wherein the mask is illuminated with illumination light from the illumination device, and an image of a pattern of the mask is transferred onto the substrate via the projection optical system.

6. A projection exposure apparatus having an illumination system for irradiating a mask with an illumination beam, and exposing a substrate with the illumination beam through the mask.

In order to partially change the illumination condition of the mask in the irradiation area of the illumination beam, at least a part of the transmittance distribution on a plane substantially conjugate to the pattern surface of the mask in the illumination system. And an optical member for independently setting the intensity distribution of the illumination beam on the optical Fourier transform surface with respect to the pattern surface for each of the illumination conditions.

7. The projection exposure apparatus according to claim 6, wherein the optical member changes a shape of a secondary light source formed on the Fourier transform surface in accordance with the illumination condition.

8. An exposure method using the lighting device according to any one of claims 1 to 3,

Illuminating the mask with illumination light from the illumination device; An exposure method comprising exposing a substrate image onto a substrate via a projection optical system.

9. The illumination device according to any one of claims 1 to 3, a mask stage on which a mask as an illuminated object is mounted, a projection optical system, and a substrate on which a pattern of the mask is transferred. A method for manufacturing a projection exposure apparatus, comprising: assembling a substrate stage to be mounted in a predetermined positional relationship.

10. A device manufacturing method for manufacturing a predetermined device using the lighting device according to any one of claims 1 to 3,

Illuminating a mask with illumination light from the illuminating device, and transferring an image of a device pattern of the mask onto a device substrate via a projection optical system. .