WO2000015882A3 - Method for switching the properties of perovskite materials - Google Patents

Method for switching the properties of perovskite materials Download PDF

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Publication number
WO2000015882A3
WO2000015882A3 PCT/US1999/019126 US9919126W WO0015882A3 WO 2000015882 A3 WO2000015882 A3 WO 2000015882A3 US 9919126 W US9919126 W US 9919126W WO 0015882 A3 WO0015882 A3 WO 0015882A3
Authority
WO
WIPO (PCT)
Prior art keywords
materials
properties
reversibly
switching
cmr
Prior art date
Application number
PCT/US1999/019126
Other languages
French (fr)
Other versions
WO2000015882A9 (en
WO2000015882A2 (en
Inventor
Shangqing Liu
Naijuan Wu
Alex Ignatiev
Original Assignee
Univ Houston
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Houston filed Critical Univ Houston
Publication of WO2000015882A2 publication Critical patent/WO2000015882A2/en
Publication of WO2000015882A3 publication Critical patent/WO2000015882A3/en
Publication of WO2000015882A9 publication Critical patent/WO2000015882A9/en

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
    • H10N15/10—Thermoelectric devices using thermal change of the dielectric constant, e.g. working above and below the Curie point
    • H10N15/15—Selection of materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/021—Formation of the switching material, e.g. layer deposition
    • H10N70/026—Formation of the switching material, e.g. layer deposition by physical vapor deposition, e.g. sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/253—Multistable switching devices, e.g. memristors having three or more terminals, e.g. transistor-like devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure

Abstract

A method for switching properties of perovskite thin film materials, including the colossal magnetoresistive (CMR) and high temperature superconducting (HTSC) materials, is provided. Short electrical pulses are applied to the materials in thin films to change both reversibly and non-reversibly the electrical, thermal, mechanical and magnetic properties of the material. Reversible resistance changes of over a factor of 10 are induced in CMR materials at room temperature and in zero external magnetic field by electrical pulsing. Applications of the method and materials to form memory devices, resistors in electronic circuits which can be varied in resistance and other applications are disclosed.
PCT/US1999/019126 1998-08-25 1999-08-24 Method for switching the properties of perovskite materials WO2000015882A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/139,994 US6204139B1 (en) 1998-08-25 1998-08-25 Method for switching the properties of perovskite materials used in thin film resistors
US09/139,994 1998-08-25

Publications (3)

Publication Number Publication Date
WO2000015882A2 WO2000015882A2 (en) 2000-03-23
WO2000015882A3 true WO2000015882A3 (en) 2000-07-13
WO2000015882A9 WO2000015882A9 (en) 2001-06-21

Family

ID=22489244

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/019126 WO2000015882A2 (en) 1998-08-25 1999-08-24 Method for switching the properties of perovskite materials

Country Status (2)

Country Link
US (1) US6204139B1 (en)
WO (1) WO2000015882A2 (en)

Families Citing this family (216)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU1887000A (en) 1999-02-17 2000-09-04 International Business Machines Corporation Microelectronic device for storing information and method thereof
US6624122B1 (en) * 2000-06-21 2003-09-23 The Regents Of The University Of California High critical current superconducting tapes
US20020084453A1 (en) * 2000-09-27 2002-07-04 Ivan Bozovic Hybrid oxide heterostructures and devices
US7242922B2 (en) * 2000-12-29 2007-07-10 Vesta Corporation Toll free calling account recharge system and method
US6473332B1 (en) 2001-04-04 2002-10-29 The University Of Houston System Electrically variable multi-state resistance computing
US6927430B2 (en) * 2001-06-28 2005-08-09 Sharp Laboratories Of America, Inc. Shared bit line cross-point memory array incorporating P/N junctions
US6693821B2 (en) * 2001-06-28 2004-02-17 Sharp Laboratories Of America, Inc. Low cross-talk electrically programmable resistance cross point memory
US6531371B2 (en) * 2001-06-28 2003-03-11 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory
US6825058B2 (en) * 2001-06-28 2004-11-30 Sharp Laboratories Of America, Inc. Methods of fabricating trench isolated cross-point memory array
US6905937B2 (en) 2001-06-28 2005-06-14 Sharp Laboratories Of America, Inc. Methods of fabricating a cross-point resistor memory array
US6569745B2 (en) 2001-06-28 2003-05-27 Sharp Laboratories Of America, Inc. Shared bit line cross point memory array
US6925001B2 (en) * 2001-06-28 2005-08-02 Sharp Laboratories Of America, Inc. Electrically programmable resistance cross point memory sensing method
US6759249B2 (en) * 2002-02-07 2004-07-06 Sharp Laboratories Of America, Inc. Device and method for reversible resistance change induced by electric pulses in non-crystalline perovskite unipolar programmable memory
US6534326B1 (en) 2002-03-13 2003-03-18 Sharp Laboratories Of America, Inc. Method of minimizing leakage current and improving breakdown voltage of polycrystalline memory thin films
US7211199B2 (en) 2002-03-15 2007-05-01 The Trustees Of The University Of Pennsylvania Magnetically-and electrically-induced variable resistance materials and method for preparing same
JP4248187B2 (en) * 2002-03-27 2009-04-02 シャープ株式会社 Integrated circuit device and neuro element
US6654210B2 (en) * 2002-04-22 2003-11-25 Sharp Laboratories Of America, Inc. Solid-state inductor and method for same
US6824814B2 (en) * 2002-05-21 2004-11-30 Sharp Laboratories Of America, Inc. Preparation of LCPMO thin films which have reversible resistance change properties
JP4282314B2 (en) 2002-06-25 2009-06-17 シャープ株式会社 Storage device
US6970375B2 (en) * 2002-08-02 2005-11-29 Unity Semiconductor Corporation Providing a reference voltage to a cross point memory array
US6753561B1 (en) 2002-08-02 2004-06-22 Unity Semiconductor Corporation Cross point memory array using multiple thin films
US6831854B2 (en) * 2002-08-02 2004-12-14 Unity Semiconductor Corporation Cross point memory array using distinct voltages
US7067862B2 (en) * 2002-08-02 2006-06-27 Unity Semiconductor Corporation Conductive memory device with conductive oxide electrodes
US6836421B2 (en) * 2002-08-02 2004-12-28 Unity Semiconductor Corporation Line drivers that fit within a specified line pitch
US6906939B2 (en) * 2002-08-02 2005-06-14 Unity Semiconductor Corporation Re-writable memory with multiple memory layers
US7057914B2 (en) * 2002-08-02 2006-06-06 Unity Semiconductor Corporation Cross point memory array with fast access time
US6834008B2 (en) * 2002-08-02 2004-12-21 Unity Semiconductor Corporation Cross point memory array using multiple modes of operation
US7009235B2 (en) * 2003-11-10 2006-03-07 Unity Semiconductor Corporation Conductive memory stack with non-uniform width
US7038935B2 (en) * 2002-08-02 2006-05-02 Unity Semiconductor Corporation 2-terminal trapped charge memory device with voltage switchable multi-level resistance
US7326979B2 (en) 2002-08-02 2008-02-05 Unity Semiconductor Corporation Resistive memory device with a treated interface
US6859382B2 (en) 2002-08-02 2005-02-22 Unity Semiconductor Corporation Memory array of a non-volatile ram
US7071008B2 (en) * 2002-08-02 2006-07-04 Unity Semiconductor Corporation Multi-resistive state material that uses dopants
US6917539B2 (en) * 2002-08-02 2005-07-12 Unity Semiconductor Corporation High-density NVRAM
US6856536B2 (en) * 2002-08-02 2005-02-15 Unity Semiconductor Corporation Non-volatile memory with a single transistor and resistive memory element
US6850429B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Cross point memory array with memory plugs exhibiting a characteristic hysteresis
US7079442B2 (en) * 2002-08-02 2006-07-18 Unity Semiconductor Corporation Layout of driver sets in a cross point memory array
US6965137B2 (en) * 2002-08-02 2005-11-15 Unity Semiconductor Corporation Multi-layer conductive memory device
US6798685B2 (en) * 2002-08-02 2004-09-28 Unity Semiconductor Corporation Multi-output multiplexor
US6850455B2 (en) * 2002-08-02 2005-02-01 Unity Semiconductor Corporation Multiplexor having a reference voltage on unselected lines
US7009909B2 (en) * 2002-08-02 2006-03-07 Unity Semiconductor Corporation Line drivers that use minimal metal layers
US6870755B2 (en) 2002-08-02 2005-03-22 Unity Semiconductor Corporation Re-writable memory with non-linear memory element
US7186569B2 (en) * 2002-08-02 2007-03-06 Unity Semiconductor Corporation Conductive memory stack with sidewall
US7020006B2 (en) * 2002-08-02 2006-03-28 Unity Semiconductor Corporation Discharge of conductive array lines in fast memory
US6583003B1 (en) * 2002-09-26 2003-06-24 Sharp Laboratories Of America, Inc. Method of fabricating 1T1R resistive memory array
US6746910B2 (en) 2002-09-30 2004-06-08 Sharp Laboratories Of America, Inc. Method of fabricating self-aligned cross-point memory array
US6762481B2 (en) * 2002-10-08 2004-07-13 The University Of Houston System Electrically programmable nonvolatile variable capacitor
US6940744B2 (en) * 2002-10-31 2005-09-06 Unity Semiconductor Corporation Adaptive programming technique for a re-writable conductive memory device
JP4509467B2 (en) * 2002-11-08 2010-07-21 シャープ株式会社 Nonvolatile variable resistance element and storage device
JP4187148B2 (en) * 2002-12-03 2008-11-26 シャープ株式会社 Data write control method for semiconductor memory device
JP2004185755A (en) 2002-12-05 2004-07-02 Sharp Corp Nonvolatile semiconductor storage device
JP4205938B2 (en) * 2002-12-05 2009-01-07 シャープ株式会社 Nonvolatile memory device
US6887523B2 (en) * 2002-12-20 2005-05-03 Sharp Laboratories Of America, Inc. Method for metal oxide thin film deposition via MOCVD
US20040170761A1 (en) * 2003-02-27 2004-09-02 Sharp Laboratories Of America, Inc. Precursor solution and method for controlling the composition of MOCVD deposited PCMO
JP2004273656A (en) * 2003-03-07 2004-09-30 Taiyo Yuden Co Ltd Epir element and semiconductor device using the same
US6905523B2 (en) * 2003-03-13 2005-06-14 Aveda Corporation Hair color application using cluster-modified water
US7309616B2 (en) * 2003-03-13 2007-12-18 Unity Semiconductor Corporation Laser annealing of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US7063984B2 (en) * 2003-03-13 2006-06-20 Unity Semiconductor Corporation Low temperature deposition of complex metal oxides (CMO) memory materials for non-volatile memory integrated circuits
US20040185674A1 (en) * 2003-03-17 2004-09-23 Applied Materials, Inc. Nitrogen-free hard mask over low K dielectric
US6723643B1 (en) 2003-03-17 2004-04-20 Sharp Laboratories Of America, Inc. Method for chemical mechanical polishing of thin films using end-point indicator structures
CN1759450B (en) 2003-03-18 2012-02-29 株式会社东芝 Programmable resistance memory device
JP2004319587A (en) * 2003-04-11 2004-11-11 Sharp Corp Memory cell, memory, and method of manufacturing memory cell
US6927120B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Method for forming an asymmetric crystalline structure memory cell
US6927074B2 (en) * 2003-05-21 2005-08-09 Sharp Laboratories Of America, Inc. Asymmetric memory cell
US20060127701A1 (en) * 2003-06-11 2006-06-15 Koninklijke Phillips Electronics N.C. Method of manufacturing a device with a magnetic layer-structure
JP2005032401A (en) * 2003-06-17 2005-02-03 Sharp Corp Nonvolatile semiconductor memory, its write method and erase method
US7408212B1 (en) 2003-07-18 2008-08-05 Winbond Electronics Corporation Stackable resistive cross-point memory with schottky diode isolation
US7106120B1 (en) 2003-07-22 2006-09-12 Sharp Laboratories Of America, Inc. PCMO resistor trimmer
CN1317765C (en) * 2003-08-06 2007-05-23 华邦电子股份有限公司 Stucture of resistance type random access of internal memory and its producing method
US6939724B2 (en) * 2003-08-13 2005-09-06 Sharp Laboratories Of America, Inc. Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
US6962648B2 (en) * 2003-09-15 2005-11-08 Global Silicon Net Corp. Back-biased face target sputtering
JPWO2005041303A1 (en) * 2003-10-23 2007-04-26 松下電器産業株式会社 RESISTANCE CHANGE ELEMENT, ITS MANUFACTURING METHOD, MEMORY INCLUDING THE ELEMENT, AND DRIVE METHOD FOR THE MEMORY
KR100576704B1 (en) * 2003-11-06 2006-05-03 한국전자통신연구원 Cuurrent control circuit including abrubt a metal-insulator-transition type devices
US7881133B2 (en) 2003-11-11 2011-02-01 Samsung Electronics Co., Ltd. Method of managing a flash memory and the flash memory
CA2545257A1 (en) 2003-11-14 2005-06-16 Uni-Pixel Displays, Inc. Simple matrix addressing in a display
US6990008B2 (en) * 2003-11-26 2006-01-24 International Business Machines Corporation Switchable capacitance and nonvolatile memory device using the same
US7130212B2 (en) * 2003-11-26 2006-10-31 International Business Machines Corporation Field effect device with a channel with a switchable conductivity
JP2005167064A (en) * 2003-12-04 2005-06-23 Sharp Corp Nonvolatile semiconductor storage device
US6949435B2 (en) * 2003-12-08 2005-09-27 Sharp Laboratories Of America, Inc. Asymmetric-area memory cell
TWI355661B (en) * 2003-12-18 2012-01-01 Panasonic Corp Method for using a variable-resistance material as
US7099179B2 (en) * 2003-12-22 2006-08-29 Unity Semiconductor Corporation Conductive memory array having page mode and burst mode write capability
US7016094B2 (en) * 2004-01-12 2006-03-21 Sharp Laboratories Of America, Inc. Nonvolatile solid state electro-optic modulator
US8409879B2 (en) * 2004-01-13 2013-04-02 Board Of Regents, University Of Houston Method of using a buffered electric pulse induced resistance device
US7608467B2 (en) * 2004-01-13 2009-10-27 Board of Regents University of Houston Switchable resistive perovskite microelectronic device with multi-layer thin film structure
US9218901B2 (en) 2004-01-13 2015-12-22 Board Of Regents, University Of Houston Two terminal multi-layer thin film resistance switching device with a diffusion barrier and methods thereof
JP2005203389A (en) * 2004-01-13 2005-07-28 Sharp Corp Method for fabricating nonvolatile semiconductor memory
JP2005203463A (en) * 2004-01-14 2005-07-28 Sharp Corp Nonvolatile semiconductor memory
JP2005244145A (en) * 2004-01-28 2005-09-08 Sharp Corp Semiconductor memory device and method of manufacturing the same
US7538338B2 (en) * 2004-09-03 2009-05-26 Unity Semiconductor Corporation Memory using variable tunnel barrier widths
US20060171200A1 (en) * 2004-02-06 2006-08-03 Unity Semiconductor Corporation Memory using mixed valence conductive oxides
US7082052B2 (en) 2004-02-06 2006-07-25 Unity Semiconductor Corporation Multi-resistive state element with reactive metal
US20050230724A1 (en) * 2004-04-16 2005-10-20 Sharp Laboratories Of America, Inc. 3D cross-point memory array with shared connections
CN1938781B (en) * 2004-04-16 2011-09-21 松下电器产业株式会社 Thin film memory device having a variable resistance
US7402456B2 (en) * 2004-04-23 2008-07-22 Sharp Laboratories Of America, Inc. PCMO thin film with memory resistance properties
US7298640B2 (en) * 2004-05-03 2007-11-20 Symetrix Corporation 1T1R resistive memory array with chained structure
WO2005117021A1 (en) 2004-05-03 2005-12-08 Unity Semiconductor Corporation Non-volatile programmable memory
US6972985B2 (en) * 2004-05-03 2005-12-06 Unity Semiconductor Corporation Memory element having islands
US7157287B2 (en) * 2004-05-27 2007-01-02 Sharp Laboratories Of America, Inc. Method of substrate surface treatment for RRAM thin film deposition
JP4365737B2 (en) 2004-06-30 2009-11-18 シャープ株式会社 Method of driving variable resistance element and storage device
US7075817B2 (en) * 2004-07-20 2006-07-11 Unity Semiconductor Corporation Two terminal memory array having reference cells
US7330370B2 (en) * 2004-07-20 2008-02-12 Unity Semiconductor Corporation Enhanced functionality in a two-terminal memory array
US7084691B2 (en) * 2004-07-21 2006-08-01 Sharp Laboratories Of America, Inc. Mono-polarity switchable PCMO resistor trimmer
JP4189395B2 (en) 2004-07-28 2008-12-03 シャープ株式会社 Nonvolatile semiconductor memory device and reading method
WO2006013819A1 (en) * 2004-08-02 2006-02-09 Matsushita Electric Industrial Co., Ltd. Resistance change element and resistance change type memory using the same
US6972239B1 (en) 2004-08-20 2005-12-06 Sharp Laboratories Of America, Inc. Low temperature MOCVD processes for fabrication of PrXCa1-xMnO3 thin films
JP3919205B2 (en) * 2004-09-09 2007-05-23 松下電器産業株式会社 Resistance change element and manufacturing method thereof
KR100593448B1 (en) * 2004-09-10 2006-06-28 삼성전자주식회사 Non-volatile memory cells employing a transition metal oxide layer as a data storage material layer and methods of fabricating the same
CN1914733A (en) * 2004-09-14 2007-02-14 松下电器产业株式会社 Variable-resistance element and non-volatile memory using the same
US20060068099A1 (en) * 2004-09-30 2006-03-30 Sharp Laboratories Of America, Inc. Grading PrxCa1-xMnO3 thin films by metalorganic chemical vapor deposition
US7339813B2 (en) * 2004-09-30 2008-03-04 Sharp Laboratories Of America, Inc. Complementary output resistive memory cell
EP1643508B1 (en) 2004-10-01 2013-05-22 International Business Machines Corporation Non-volatile memory element with programmable resistance
US20060081466A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima High uniformity 1-D multiple magnet magnetron source
US7425504B2 (en) * 2004-10-15 2008-09-16 4D-S Pty Ltd. Systems and methods for plasma etching
US20060081467A1 (en) * 2004-10-15 2006-04-20 Makoto Nagashima Systems and methods for magnetron deposition
JP2006120707A (en) * 2004-10-19 2006-05-11 Matsushita Electric Ind Co Ltd Variable resistance element and semiconductor device
US7205238B2 (en) * 2004-10-21 2007-04-17 Sharp Laboratories Of America, Inc. Chemical mechanical polish of PCMO thin films for RRAM applications
US7029982B1 (en) 2004-10-21 2006-04-18 Sharp Laboratories Of America, Inc. Method of affecting RRAM characteristics by doping PCMO thin films
US7464621B2 (en) * 2004-11-09 2008-12-16 Steeda Autosports, Inc. Longitudinally displaced shifter
US7701834B2 (en) * 2005-01-18 2010-04-20 Unity Semiconductor Corporation Movable terminal in a two terminal memory array
JP2006203098A (en) * 2005-01-24 2006-08-03 Sharp Corp Non-volatile semiconductor storage device
JP4427464B2 (en) 2005-02-02 2010-03-10 シャープ株式会社 Nonvolatile semiconductor memory device and operation method thereof
US7008813B1 (en) 2005-02-28 2006-03-07 Sharp Laboratories Of America, Inc.. Epitaxial growth of germanium photodetector for CMOS imagers
US8559209B2 (en) 2011-06-10 2013-10-15 Unity Semiconductor Corporation Array voltage regulating technique to enable data operations on large cross-point memory arrays with resistive memory elements
US8937292B2 (en) 2011-08-15 2015-01-20 Unity Semiconductor Corporation Vertical cross point arrays for ultra high density memory applications
US8270193B2 (en) 2010-01-29 2012-09-18 Unity Semiconductor Corporation Local bit lines and methods of selecting the same to access memory elements in cross-point arrays
US20130082232A1 (en) 2011-09-30 2013-04-04 Unity Semiconductor Corporation Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells
US8565003B2 (en) 2011-06-28 2013-10-22 Unity Semiconductor Corporation Multilayer cross-point memory array having reduced disturb susceptibility
US7233177B2 (en) * 2005-04-04 2007-06-19 International Business Machines Corporation Precision tuning of a phase-change resistive element
US7488967B2 (en) * 2005-04-06 2009-02-10 International Business Machines Corporation Structure for confining the switching current in phase memory (PCM) cells
WO2006109622A1 (en) * 2005-04-12 2006-10-19 Matsushita Electric Industrial Co., Ltd. Electrical device, memory device, and semiconductor integrated circuit
WO2006114904A1 (en) * 2005-04-22 2006-11-02 Matsushita Electric Industrial Co., Ltd. Non volatile memory cell and semiconductor memory device
JP5049483B2 (en) * 2005-04-22 2012-10-17 パナソニック株式会社 ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT
JP4313372B2 (en) * 2005-05-11 2009-08-12 シャープ株式会社 Nonvolatile semiconductor memory device
US7376006B2 (en) * 2005-05-13 2008-05-20 International Business Machines Corporation Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage element
CN100593214C (en) * 2005-05-27 2010-03-03 中国科学院物理研究所 Perovskite oxide thin-film compound device
US7256415B2 (en) * 2005-05-31 2007-08-14 International Business Machines Corporation Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells
JP4843259B2 (en) * 2005-06-10 2011-12-21 シャープ株式会社 Method for manufacturing variable resistance element
JP4469319B2 (en) * 2005-06-17 2010-05-26 シャープ株式会社 Semiconductor memory device
JP4783070B2 (en) * 2005-06-24 2011-09-28 シャープ株式会社 Semiconductor memory device and manufacturing method thereof
CN100409444C (en) * 2005-07-06 2008-08-06 中国科学院上海硅酸盐研究所 Non-volatility memory, switching method and preparing method based on resistance change
WO2007007606A1 (en) * 2005-07-11 2007-01-18 Sharp Kabushiki Kaisha Variable resistance device
JP2007027537A (en) * 2005-07-20 2007-02-01 Sharp Corp Semiconductor memory device equipped with variable resistive element
JP3889023B2 (en) * 2005-08-05 2007-03-07 シャープ株式会社 Variable resistance element, method for manufacturing the same, and memory device including the same
US7978047B2 (en) * 2005-08-29 2011-07-12 Sharp Kabushiki Kaisha Variable resistor element and its manufacturing method
US20070048990A1 (en) * 2005-08-30 2007-03-01 Sharp Laboratories Of America, Inc. Method of buffer layer formation for RRAM thin film deposition
US20070084717A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile caching data storage
US20070084716A1 (en) * 2005-10-16 2007-04-19 Makoto Nagashima Back-biased face target sputtering based high density non-volatile data storage
JP4061328B2 (en) 2005-12-02 2008-03-19 シャープ株式会社 Variable resistance element and manufacturing method thereof
JP4017650B2 (en) * 2005-12-02 2007-12-05 シャープ株式会社 Variable resistance element and manufacturing method thereof
JP5049491B2 (en) * 2005-12-22 2012-10-17 パナソニック株式会社 ELECTRIC ELEMENT, MEMORY DEVICE, AND SEMICONDUCTOR INTEGRATED CIRCUIT
JP3989506B2 (en) * 2005-12-27 2007-10-10 シャープ株式会社 Variable resistance element, manufacturing method thereof, and semiconductor memory device including the same
JP2007184419A (en) * 2006-01-06 2007-07-19 Sharp Corp Nonvolatile memory device
CN101351888B (en) * 2006-01-24 2010-08-18 松下电器产业株式会社 Electric element, memory device and semiconductor integrated circuit
JP4398945B2 (en) * 2006-02-23 2010-01-13 シャープ株式会社 Nonvolatile semiconductor memory device and data rewriting method
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
US8395199B2 (en) * 2006-03-25 2013-03-12 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US20070235811A1 (en) * 2006-04-07 2007-10-11 International Business Machines Corporation Simultaneous conditioning of a plurality of memory cells through series resistors
JP4699932B2 (en) * 2006-04-13 2011-06-15 パナソニック株式会社 Resistance change element, resistance change memory using the same, and manufacturing method thereof
JP4857014B2 (en) * 2006-04-19 2012-01-18 パナソニック株式会社 Resistance change element and resistance change type memory using the same
US7324366B2 (en) * 2006-04-21 2008-01-29 International Business Machines Corporation Non-volatile memory architecture employing bipolar programmable resistance storage elements
JP4129274B2 (en) * 2006-05-18 2008-08-06 シャープ株式会社 Semiconductor memory device
US7522468B2 (en) * 2006-06-08 2009-04-21 Unity Semiconductor Corporation Serial memory interface
US7747817B2 (en) * 2006-06-28 2010-06-29 Unity Semiconductor Corporation Performing data operations using non-volatile third dimension memory
US20080011996A1 (en) * 2006-07-11 2008-01-17 Johannes Georg Bednorz Multi-layer device with switchable resistance
JP2008021750A (en) * 2006-07-11 2008-01-31 Matsushita Electric Ind Co Ltd Resistance change element, method for manufacturing the same, and resistance change memory using the same element
US20080011603A1 (en) * 2006-07-14 2008-01-17 Makoto Nagashima Ultra high vacuum deposition of PCMO material
US8454810B2 (en) * 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
US7932548B2 (en) 2006-07-14 2011-04-26 4D-S Pty Ltd. Systems and methods for fabricating self-aligned memory cell
US7619945B2 (en) * 2006-08-18 2009-11-17 Unity Semiconductor Corporation Memory power management
JP4105760B2 (en) * 2006-08-25 2008-06-25 松下電器産業株式会社 Storage element, memory device, and semiconductor integrated circuit
US8308915B2 (en) 2006-09-14 2012-11-13 4D-S Pty Ltd. Systems and methods for magnetron deposition
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US7539811B2 (en) 2006-10-05 2009-05-26 Unity Semiconductor Corporation Scaleable memory systems using third dimension memory
US7524722B2 (en) * 2006-10-12 2009-04-28 Macronix International Co., Ltd. Resistance type memory device and fabricating method and operating method thereof
US7379364B2 (en) * 2006-10-19 2008-05-27 Unity Semiconductor Corporation Sensing a signal in a two-terminal memory array having leakage current
US7372753B1 (en) * 2006-10-19 2008-05-13 Unity Semiconductor Corporation Two-cycle sensing in a two-terminal memory array having leakage current
US8018761B2 (en) * 2006-12-28 2011-09-13 Panasonic Corporation Resistance variable element, resistance variable memory apparatus, and resistance variable apparatus
CN101501851B (en) * 2006-12-28 2010-11-17 松下电器产业株式会社 Resistance variable element and resistance variable storage device
US7765380B2 (en) * 2007-01-19 2010-07-27 Unity Semiconductor Corporation Fast data access through page manipulation
JP4252110B2 (en) 2007-03-29 2009-04-08 パナソニック株式会社 Nonvolatile memory device, nonvolatile memory element, and nonvolatile memory element array
JP4792108B2 (en) * 2007-03-30 2011-10-12 株式会社東芝 Information recording / reproducing device
CN101542729B (en) 2007-04-09 2012-05-02 松下电器产业株式会社 Variable resistance element, nonvolatile switching element, and variable resistance memory device
JP4967176B2 (en) * 2007-05-10 2012-07-04 シャープ株式会社 Variable resistance element, method of manufacturing the same, and nonvolatile semiconductor memory device
KR101261008B1 (en) * 2007-08-14 2013-05-06 삼성전자주식회사 Operating method of nonvolatile memory device having three-level nonvolatile memory cells and nonvolatile memory device using the same
JP5308105B2 (en) * 2007-10-05 2013-10-09 シャープ株式会社 Variable resistance element and manufacturing method thereof
JP2009141225A (en) * 2007-12-07 2009-06-25 Sharp Corp Variable resistive element, method for manufacturing variable resistive element, nonvolatile semiconductor storage device
JP4607252B2 (en) * 2008-02-25 2011-01-05 パナソニック株式会社 Driving method of variable resistance element and variable resistance memory device using the same
US7615459B1 (en) 2008-08-12 2009-11-10 Sharp Kabushiki Kaisha Manufacturing method for variable resistive element
CN101878507B (en) * 2008-09-30 2013-10-23 松下电器产业株式会社 Method for driving resistance change element, initial processing method, and nonvolatile storage device
US8289748B2 (en) * 2008-10-27 2012-10-16 Seagate Technology Llc Tuning a variable resistance of a resistive sense element
US8390100B2 (en) * 2008-12-19 2013-03-05 Unity Semiconductor Corporation Conductive oxide electrodes
US8431921B2 (en) * 2009-01-13 2013-04-30 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
JP4774109B2 (en) * 2009-03-13 2011-09-14 シャープ株式会社 Control circuit for forming process of nonvolatile variable resistance element and control method for forming process
JP4628501B2 (en) * 2009-03-25 2011-02-09 パナソニック株式会社 Resistance variable element driving method and nonvolatile memory device
US8421048B2 (en) * 2009-07-13 2013-04-16 Seagate Technology Llc Non-volatile memory with active ionic interface region
JP5120967B2 (en) * 2009-12-25 2013-01-16 シャープ株式会社 Variable resistance element
WO2011096194A1 (en) 2010-02-02 2011-08-11 パナソニック株式会社 Method of driving resistance changing element, method of initialization of same, and nonvolatile memory device
US8638584B2 (en) * 2010-02-02 2014-01-28 Unity Semiconductor Corporation Memory architectures and techniques to enhance throughput for cross-point arrays
WO2011109019A1 (en) * 2010-03-03 2011-09-09 Hewlett-Packard Development Company, L.P. Resistive switches
US8542518B2 (en) 2010-03-31 2013-09-24 Hewlett-Packard Development Company, L.P. Photo-responsive memory resistor and method of operation
JP5069339B2 (en) * 2010-06-10 2012-11-07 シャープ株式会社 Resistance control method of nonvolatile variable resistance element
JP5156060B2 (en) 2010-07-29 2013-03-06 シャープ株式会社 Nonvolatile semiconductor memory device
JP5204825B2 (en) 2010-09-17 2013-06-05 シャープ株式会社 Semiconductor memory device
US8377718B2 (en) * 2010-11-10 2013-02-19 Micron Technology, Inc. Methods of forming a crystalline Pr1-xCaxMnO3 (PCMO) material and methods of forming semiconductor device structures comprising crystalline PCMO
JP5438707B2 (en) 2011-03-04 2014-03-12 シャープ株式会社 Variable resistance element, method of manufacturing the same, and nonvolatile semiconductor memory device including the variable resistance element
US10566056B2 (en) 2011-06-10 2020-02-18 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US9117495B2 (en) 2011-06-10 2015-08-25 Unity Semiconductor Corporation Global bit line pre-charge circuit that compensates for process, operating voltage, and temperature variations
US8891276B2 (en) 2011-06-10 2014-11-18 Unity Semiconductor Corporation Memory array with local bitlines and local-to-global bitline pass gates and gain stages
WO2013088704A1 (en) 2011-12-13 2013-06-20 パナソニック株式会社 Method for driving variable resistance element, and nonvolatile storage device
WO2013157261A1 (en) 2012-04-20 2013-10-24 パナソニック株式会社 Method for driving nonvolatile storage element, and nonvolatile storage device
JP2014032724A (en) 2012-08-03 2014-02-20 Sharp Corp Semiconductor storage device
US10457148B2 (en) 2017-02-24 2019-10-29 Epic Battery Inc. Solar car
WO2018187384A1 (en) 2017-04-03 2018-10-11 Epic Battery Inc. Modular solar battery
WO2019054001A1 (en) 2017-09-12 2019-03-21 パナソニック株式会社 Nonvolatile storage device and driving method
JP7308026B2 (en) 2018-12-26 2023-07-13 ヌヴォトンテクノロジージャパン株式会社 Variable resistance nonvolatile memory element and variable resistance nonvolatile memory device using the same
US11489082B2 (en) 2019-07-30 2022-11-01 Epic Battery Inc. Durable solar panels
CN111326951B (en) * 2020-03-11 2021-09-14 吉林大学 Perovskite micro-ring resonator array, preparation method and application thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372859A (en) * 1992-10-20 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
US5418389A (en) * 1992-11-09 1995-05-23 Mitsubishi Chemical Corporation Field-effect transistor with perovskite oxide channel

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2880180B2 (en) 1989-03-28 1999-04-05 キヤノン株式会社 Storage media
US5792569A (en) 1996-03-19 1998-08-11 International Business Machines Corporation Magnetic devices and sensors based on perovskite manganese oxide materials

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5372859A (en) * 1992-10-20 1994-12-13 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
US5418389A (en) * 1992-11-09 1995-05-23 Mitsubishi Chemical Corporation Field-effect transistor with perovskite oxide channel

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ASAMITSU ET AL.: "Current Switching of Resistive States in Magnetoresistive Manganites", NATURE,, vol. 388, July 1997 (1997-07-01), pages 50 - 52, XP002924774 *
LIN ET AL.: "Transient Behavior and Memory Effect of a PbZrxTi1-xO3/Yba2Cu3O7 Three-terminal Device", APPL. PHYS. LETT.,, vol. 65, no. 8, 22 August 1994 (1994-08-22), pages 953 - 955, XP002924777 *
MIYAMO ET AL.: "Photoinduced Insulator-to-Metal transition in a Peroskite Manganite", vol. 78, June 1997 (1997-06-01), pages 4257 - 4260, XP002924776 *
WU ET AL.: "Heterostructures of Pb(ZrxTi1-x)O3 and YBa2Cu3O7 on MgO Substrate Prepared by Pulsed Laser Ablation", JPN. J. APPL. PHYS.,, vol. 32, November 1993 (1993-11-01), pages 5019 - 5023, XP002924775 *

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