WO2000018980A8 - An in-line sputter deposition system - Google Patents
An in-line sputter deposition systemInfo
- Publication number
- WO2000018980A8 WO2000018980A8 PCT/US1999/022888 US9922888W WO0018980A8 WO 2000018980 A8 WO2000018980 A8 WO 2000018980A8 US 9922888 W US9922888 W US 9922888W WO 0018980 A8 WO0018980 A8 WO 0018980A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- process chamber
- stage elevator
- deposition system
- sputter deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/139—Associated with semiconductor wafer handling including wafer charging or discharging means for vacuum chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/141—Associated with semiconductor wafer handling includes means for gripping wafer
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000572425A JP2002525438A (en) | 1998-10-01 | 1999-10-01 | In-line sputter deposition system |
EP99951707A EP1125001A1 (en) | 1998-09-23 | 1999-10-01 | An in-line sputter deposition system |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10261098P | 1998-10-01 | 1998-10-01 | |
US60/102,610 | 1998-10-01 | ||
US11672199P | 1999-01-21 | 1999-01-21 | |
US60/116,721 | 1999-01-21 | ||
US09/404,516 US6217272B1 (en) | 1998-10-01 | 1999-09-23 | In-line sputter deposition system |
US09/404,516 | 1999-09-23 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000018980A1 WO2000018980A1 (en) | 2000-04-06 |
WO2000018980A8 true WO2000018980A8 (en) | 2000-09-14 |
WO2000018980A9 WO2000018980A9 (en) | 2000-11-02 |
Family
ID=27379379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/022888 WO2000018980A1 (en) | 1998-09-23 | 1999-10-01 | An in-line sputter deposition system |
Country Status (3)
Country | Link |
---|---|
US (1) | US6217272B1 (en) |
JP (1) | JP2002525438A (en) |
WO (1) | WO2000018980A1 (en) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11307553A (en) * | 1998-04-21 | 1999-11-05 | Shinkawa Ltd | Method and device for positioning semiconductor pellet |
AU2001245638A1 (en) * | 2000-03-13 | 2001-09-24 | Laurier Inc. | Automated feed mechanism for electronic components of silicon wafer |
US6439245B1 (en) * | 2000-06-30 | 2002-08-27 | Lam Research Corporation | Method for transferring wafers from a conveyor system to a wafer processing station |
US6821912B2 (en) * | 2000-07-27 | 2004-11-23 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
US6682288B2 (en) * | 2000-07-27 | 2004-01-27 | Nexx Systems Packaging, Llc | Substrate processing pallet and related substrate processing method and machine |
US6609877B1 (en) | 2000-10-04 | 2003-08-26 | The Boc Group, Inc. | Vacuum chamber load lock structure and article transport mechanism |
US6841033B2 (en) * | 2001-03-21 | 2005-01-11 | Nordson Corporation | Material handling system and method for a multi-workpiece plasma treatment system |
EP1336985A1 (en) | 2002-02-19 | 2003-08-20 | Singulus Technologies AG | Sputtering cathode, and device and method for coating a substrate with a plurality of layers |
US20040007325A1 (en) * | 2002-06-11 | 2004-01-15 | Applied Materials, Inc. | Integrated equipment set for forming a low K dielectric interconnect on a substrate |
DE10247051A1 (en) * | 2002-10-09 | 2004-04-22 | Polymer Latex Gmbh & Co Kg | Latex and process for its manufacture |
US7100954B2 (en) * | 2003-07-11 | 2006-09-05 | Nexx Systems, Inc. | Ultra-thin wafer handling system |
US7077019B2 (en) * | 2003-08-08 | 2006-07-18 | Photon Dynamics, Inc. | High precision gas bearing split-axis stage for transport and constraint of large flat flexible media during processing |
KR101317995B1 (en) * | 2004-05-14 | 2013-10-14 | 페로텍 (유에스에이) 코포레이션 | Methods and apparatuses for transferring articles through a load lock chamber under vacuum |
US20060137609A1 (en) * | 2004-09-13 | 2006-06-29 | Puchacz Jerzy P | Multi-single wafer processing apparatus |
WO2008021501A2 (en) * | 2006-08-18 | 2008-02-21 | Piero Sferlazzo | Apparatus and method for ultra-shallow implantation in a semiconductor device |
US9147588B2 (en) * | 2007-03-09 | 2015-09-29 | Tel Nexx, Inc. | Substrate processing pallet with cooling |
US20130014700A1 (en) * | 2011-07-11 | 2013-01-17 | Hariharakeshava Sarpangala Hegde | Target shield designs in multi-target deposition system. |
US9110230B2 (en) | 2013-05-07 | 2015-08-18 | Corning Incorporated | Scratch-resistant articles with retained optical properties |
US9366784B2 (en) | 2013-05-07 | 2016-06-14 | Corning Incorporated | Low-color scratch-resistant articles with a multilayer optical film |
US11267973B2 (en) | 2014-05-12 | 2022-03-08 | Corning Incorporated | Durable anti-reflective articles |
US9335444B2 (en) | 2014-05-12 | 2016-05-10 | Corning Incorporated | Durable and scratch-resistant anti-reflective articles |
US9790593B2 (en) | 2014-08-01 | 2017-10-17 | Corning Incorporated | Scratch-resistant materials and articles including the same |
JP2018536177A (en) | 2015-09-14 | 2018-12-06 | コーニング インコーポレイテッド | High light transmittance and scratch resistant anti-reflective article |
US9856557B1 (en) | 2016-01-22 | 2018-01-02 | Seagate Technology Llc | Fabrication of a multi-layered magnetic element |
KR20230146673A (en) | 2018-08-17 | 2023-10-19 | 코닝 인코포레이티드 | Inorganic Oxide Articles with Thin, Durable Anti-Reflective Structures |
Family Cites Families (89)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972424A (en) | 1973-03-12 | 1976-08-03 | The Computervision Corporation | Automatic wafer loading and pre-alignment system |
US3902615A (en) | 1973-03-12 | 1975-09-02 | Computervision Corp | Automatic wafer loading and pre-alignment system |
US4008815A (en) | 1975-04-14 | 1977-02-22 | Applied Materials, Inc. | Reactor loading apparatus |
US4405435A (en) | 1980-08-27 | 1983-09-20 | Hitachi, Ltd. | Apparatus for performing continuous treatment in vacuum |
US4437961A (en) | 1982-08-19 | 1984-03-20 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber |
US4534695A (en) * | 1983-05-23 | 1985-08-13 | Eaton Corporation | Wafer transport system |
US4558984A (en) * | 1984-05-18 | 1985-12-17 | Varian Associates, Inc. | Wafer lifting and holding apparatus |
US4586743A (en) | 1984-09-24 | 1986-05-06 | Intelledex Incorporated | Robotic gripper for disk-shaped objects |
US4668365A (en) | 1984-10-25 | 1987-05-26 | Applied Materials, Inc. | Apparatus and method for magnetron-enhanced plasma-assisted chemical vapor deposition |
US5224809A (en) | 1985-01-22 | 1993-07-06 | Applied Materials, Inc. | Semiconductor processing system with robotic autoloader and load lock |
US5280983A (en) | 1985-01-22 | 1994-01-25 | Applied Materials, Inc. | Semiconductor processing system with robotic autoloader and load lock |
EP0189279B1 (en) | 1985-01-22 | 1991-10-09 | Applied Materials, Inc. | Semiconductor processing system |
AU572375B2 (en) | 1985-01-31 | 1988-05-05 | Boc Group, Inc., The | Transporting of workpiece to and from vacuum coating apparatus |
JPH07105345B2 (en) | 1985-08-08 | 1995-11-13 | 日電アネルバ株式会社 | Substrate processing equipment |
US4715921A (en) | 1986-10-24 | 1987-12-29 | General Signal Corporation | Quad processor |
US5102495A (en) | 1986-04-18 | 1992-04-07 | General Signal Corporation | Method providing multiple-processing of substrates |
US5013385A (en) | 1986-04-18 | 1991-05-07 | General Signal Corporation | Quad processor |
US5308431A (en) | 1986-04-18 | 1994-05-03 | General Signal Corporation | System providing multiple processing of substrates |
CA1331163C (en) | 1986-04-18 | 1994-08-02 | Applied Materials, Inc. | Multiple-processing and contamination-free plasma etching system |
JPH0831506B2 (en) * | 1986-07-17 | 1996-03-27 | 松下電器産業株式会社 | Substrate transfer device |
US5215619A (en) | 1986-12-19 | 1993-06-01 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4892753A (en) | 1986-12-19 | 1990-01-09 | Applied Materials, Inc. | Process for PECVD of silicon oxide using TEOS decomposition |
US5292393A (en) | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
US5871811A (en) | 1986-12-19 | 1999-02-16 | Applied Materials, Inc. | Method for protecting against deposition on a selected region of a substrate |
US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4842683A (en) | 1986-12-19 | 1989-06-27 | Applied Materials, Inc. | Magnetic field-enhanced plasma etch reactor |
US5882165A (en) | 1986-12-19 | 1999-03-16 | Applied Materials, Inc. | Multiple chamber integrated process system |
US4819167A (en) | 1987-04-20 | 1989-04-04 | Applied Materials, Inc. | System and method for detecting the center of an integrated circuit wafer |
US4785962A (en) | 1987-04-20 | 1988-11-22 | Applied Materials, Inc. | Vacuum chamber slit valve |
US4962441A (en) | 1989-04-10 | 1990-10-09 | Applied Materials, Inc. | Isolated electrostatic wafer blade clamp |
US5046909A (en) | 1989-06-29 | 1991-09-10 | Applied Materials, Inc. | Method and apparatus for handling semiconductor wafers |
JPH0394070A (en) * | 1989-09-05 | 1991-04-18 | Kokusai Electric Co Ltd | Cvd device |
DE69027273T2 (en) | 1989-10-20 | 1997-01-23 | Applied Materials Inc | Biaxial robot with magnetic coupling |
US5447409A (en) | 1989-10-20 | 1995-09-05 | Applied Materials, Inc. | Robot assembly |
US5227708A (en) | 1989-10-20 | 1993-07-13 | Applied Materials, Inc. | Two-axis magnetically coupled robot |
DE69128345T2 (en) | 1990-01-04 | 1998-03-26 | Mattson Tech Inc | INDUCTIVE PLASMA REACTOR IN THE LOWER HIGH FREQUENCY RANGE |
JP2644912B2 (en) | 1990-08-29 | 1997-08-25 | 株式会社日立製作所 | Vacuum processing apparatus and operating method thereof |
US5199483A (en) | 1991-05-15 | 1993-04-06 | Applied Materials, Inc. | Method and apparatus for cooling wafers |
US5242860A (en) | 1991-07-24 | 1993-09-07 | Applied Materials, Inc. | Method for the formation of tin barrier layer with preferential (111) crystallographic orientation |
US5315473A (en) | 1992-01-21 | 1994-05-24 | Applied Materials, Inc. | Isolated electrostatic chuck and excitation method |
JP3001333B2 (en) * | 1992-06-10 | 2000-01-24 | 日本電気株式会社 | In-line sputtering equipment |
US5371042A (en) | 1992-06-16 | 1994-12-06 | Applied Materials, Inc. | Method of filling contacts in semiconductor devices |
US5803977A (en) | 1992-09-30 | 1998-09-08 | Applied Materials, Inc. | Apparatus for full wafer deposition |
KR100303075B1 (en) | 1992-11-06 | 2001-11-30 | 조셉 제이. 스위니 | Integrated circuit wafer transfer method and apparatus |
KR100302012B1 (en) | 1992-11-06 | 2001-11-30 | 조셉 제이. 스위니 | Micro-environment container connection method and micro-environment load lock |
US5387067A (en) | 1993-01-14 | 1995-02-07 | Applied Materials, Inc. | Direct load/unload semiconductor wafer cassette apparatus and transfer system |
ES2090893T3 (en) | 1993-01-28 | 1996-10-16 | Applied Materials Inc | VACUUM TREATMENT APPARATUS THAT HAS AN IMPROVED PRODUCTION CAPACITY. |
JP2875945B2 (en) | 1993-01-28 | 1999-03-31 | アプライド マテリアルズ インコーポレイテッド | Method of depositing silicon nitride thin film on large area glass substrate at high deposition rate by CVD |
US5607009A (en) | 1993-01-28 | 1997-03-04 | Applied Materials, Inc. | Method of heating and cooling large area substrates and apparatus therefor |
US5630916A (en) | 1993-03-02 | 1997-05-20 | Cvc Products, Inc. | Magnetic orienting device for thin film deposition and method of use |
US5363872A (en) | 1993-03-16 | 1994-11-15 | Applied Materials, Inc. | Low particulate slit valve system and method for controlling same |
US5345999A (en) | 1993-03-17 | 1994-09-13 | Applied Materials, Inc. | Method and apparatus for cooling semiconductor wafers |
US5366002A (en) | 1993-05-05 | 1994-11-22 | Applied Materials, Inc. | Apparatus and method to ensure heat transfer to and from an entire substrate during semiconductor processing |
US5403459A (en) | 1993-05-17 | 1995-04-04 | Applied Materials, Inc. | Cleaning of a PVD chamber containing a collimator |
DE69402918T2 (en) | 1993-07-15 | 1997-08-14 | Applied Materials Inc | Substrate catcher and ceramic sheet for semiconductor processing equipment |
US5427666A (en) | 1993-09-09 | 1995-06-27 | Applied Materials, Inc. | Method for in-situ cleaning a Ti target in a Ti + TiN coating process |
US5443995A (en) | 1993-09-17 | 1995-08-22 | Applied Materials, Inc. | Method for metallizing a semiconductor wafer |
US5747360A (en) | 1993-09-17 | 1998-05-05 | Applied Materials, Inc. | Method of metalizing a semiconductor wafer |
US5538390A (en) | 1993-10-29 | 1996-07-23 | Applied Materials, Inc. | Enclosure for load lock interface |
US5851602A (en) | 1993-12-09 | 1998-12-22 | Applied Materials, Inc. | Deposition of high quality conformal silicon oxide thin films for the manufacture of thin film transistors |
US5822171A (en) | 1994-02-22 | 1998-10-13 | Applied Materials, Inc. | Electrostatic chuck with improved erosion resistance |
US5643366A (en) | 1994-01-31 | 1997-07-01 | Applied Materials, Inc. | Wafer handling within a vacuum chamber using vacuum |
US5460689A (en) | 1994-02-28 | 1995-10-24 | Applied Materials, Inc. | High pressure plasma treatment method and apparatus |
US5563798A (en) | 1994-04-05 | 1996-10-08 | Applied Materials, Inc. | Wafer positioning system |
US5730801A (en) | 1994-08-23 | 1998-03-24 | Applied Materials, Inc. | Compartnetalized substrate processing chamber |
EP0735577A3 (en) | 1994-12-14 | 1997-04-02 | Applied Materials Inc | Deposition process and apparatus therefor |
US5579718A (en) | 1995-03-31 | 1996-12-03 | Applied Materials, Inc. | Slit valve door |
JP2001524259A (en) | 1995-07-10 | 2001-11-27 | シーヴィシー、プラダクツ、インク | Programmable ultra-clean electromagnetic substrate rotating apparatus and method for microelectronics manufacturing equipment |
WO1997003220A1 (en) | 1995-07-10 | 1997-01-30 | Cvc Products, Inc. | Permanent magnet array apparatus and method |
US5799860A (en) | 1995-08-07 | 1998-09-01 | Applied Materials, Inc. | Preparation and bonding of workpieces to form sputtering targets and other assemblies |
US5746460A (en) | 1995-12-08 | 1998-05-05 | Applied Materials, Inc. | End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector |
US5697427A (en) | 1995-12-22 | 1997-12-16 | Applied Materials, Inc. | Apparatus and method for cooling a substrate |
US5658442A (en) | 1996-03-07 | 1997-08-19 | Applied Materials, Inc. | Target and dark space shield for a physical vapor deposition system |
US5810937A (en) | 1996-03-13 | 1998-09-22 | Applied Materials, Inc. | Using ceramic wafer to protect susceptor during cleaning of a processing chamber |
US5788453A (en) | 1996-05-30 | 1998-08-04 | Applied Materials, Inc. | Piezoelectric wafer gripping system for robot blades |
US5824197A (en) | 1996-06-05 | 1998-10-20 | Applied Materials, Inc. | Shield for a physical vapor deposition chamber |
US5788799A (en) | 1996-06-11 | 1998-08-04 | Applied Materials, Inc. | Apparatus and method for cleaning of semiconductor process chamber surfaces |
US5846883A (en) | 1996-07-10 | 1998-12-08 | Cvc, Inc. | Method for multi-zone high-density inductively-coupled plasma generation |
JPH1064902A (en) | 1996-07-12 | 1998-03-06 | Applied Materials Inc | Method for film formation of aluminum material and device therefor |
US5789878A (en) | 1996-07-15 | 1998-08-04 | Applied Materials, Inc. | Dual plane robot |
US5784238A (en) | 1996-08-01 | 1998-07-21 | Applied Materials, Inc. | Coordinated cluster tool energy delivery system |
US5838121A (en) | 1996-11-18 | 1998-11-17 | Applied Materials, Inc. | Dual blade robot |
US5855681A (en) | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5833426A (en) | 1996-12-11 | 1998-11-10 | Applied Materials, Inc. | Magnetically coupled wafer extraction platform |
US5795355A (en) | 1996-12-24 | 1998-08-18 | Applied Materials, Inc. | Integrated micro-environment container loader apparatus having a semipermeable barrier |
US5861086A (en) | 1997-03-10 | 1999-01-19 | Applied Materials, Inc. | Method and apparatus for sputter etch conditioning a ceramic body |
-
1999
- 1999-09-23 US US09/404,516 patent/US6217272B1/en not_active Expired - Lifetime
- 1999-10-01 JP JP2000572425A patent/JP2002525438A/en active Pending
- 1999-10-01 WO PCT/US1999/022888 patent/WO2000018980A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2000018980A1 (en) | 2000-04-06 |
JP2002525438A (en) | 2002-08-13 |
US6217272B1 (en) | 2001-04-17 |
WO2000018980A9 (en) | 2000-11-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2000018980A8 (en) | An in-line sputter deposition system | |
TW502284B (en) | Multichamber system of etching facility for manufacturing semiconductor device | |
EP0392134A3 (en) | Process for treatment of backside of semiconductor wafer | |
WO2002023597A3 (en) | Double dual slot load lock for process equipment | |
WO1999028951A3 (en) | Systems and methods for low contamination, high throughput handling of workpieces for vacuum processing | |
WO2000018979A8 (en) | Sputter deposition apparatus | |
AU6339590A (en) | Sputtering apparatus and sputtering processing system using the same | |
EP0827185A3 (en) | Substrate treatment system, substrate transfer system, and substrate transfer method | |
WO2002058116A3 (en) | Integrated system for processing semiconductor wafers | |
IE830782L (en) | Deposition apparatus. | |
WO2000005745A8 (en) | Physical vapor processing of a surface with non-uniformity compensation | |
JPS6362233A (en) | Reactive ion etching apparatus | |
ES2092250T3 (en) | PROCEDURE FOR FORMING A TANK CONTAINING SILICON ON THE SURFACE OF A METALLIC SUBSTRATE, AND ANTICORROSION TREATMENT PROCEDURE. | |
EP0800203A3 (en) | Multiple load lock system | |
TW329023B (en) | Non-plasma halogenated gas flow | |
JPS60221572A (en) | Continuous discharge reaction treating device | |
WO2000068973A3 (en) | System for treating wafers | |
EP0677467A3 (en) | Method for transporting/processing individual planar substrates. | |
AU4936196A (en) | Plasma chamber | |
EP0771628A3 (en) | A fixture and method for laser fabrication by in-situ cleaving of semiconductor bars | |
EP0367423A3 (en) | Vacuum deposition system | |
JPH0252449A (en) | Loading and unloading of substrate | |
EP0966024A3 (en) | Method and apparatus for protection of substrate surface | |
CA2332900A1 (en) | Apparatus and method for producing plane-parallel flakes | |
JP2000091398A (en) | Substrate processing equipment |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: C1 Designated state(s): JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: C1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
CFP | Corrected version of a pamphlet front page | ||
CR1 | Correction of entry in section i |
Free format text: PAT. BUL. 14/2000 UNDER (30) "NOT FURNISHED" BY "09/404516" |
|
AK | Designated states |
Kind code of ref document: C2 Designated state(s): JP |
|
AL | Designated countries for regional patents |
Kind code of ref document: C2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/9-9/9, DRAWINGS, REPLACED BY NEW PAGES 1/9-9/9; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2000 572425 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1999951707 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1999951707 Country of ref document: EP |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1999951707 Country of ref document: EP |