WO2000019270A9 - Method for forming a critical dimension test structure and its use - Google Patents
Method for forming a critical dimension test structure and its useInfo
- Publication number
- WO2000019270A9 WO2000019270A9 PCT/US1999/022583 US9922583W WO0019270A9 WO 2000019270 A9 WO2000019270 A9 WO 2000019270A9 US 9922583 W US9922583 W US 9922583W WO 0019270 A9 WO0019270 A9 WO 0019270A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- exposure
- critical dimension
- feature
- cdtm
- image
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70591—Testing optical components
- G03F7/706—Aberration measurement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70681—Metrology strategies
- G03F7/70683—Mark designs
Definitions
- the present invention relates to lithographic methods and, more particularly to lithographic methods for characterizing and monitoring lithographic exposure tool imaging performance .
- Imaging performance with respect to a lithographic exposure tool, is generally understood to describe an exposure tool's ability to accurately produce an image of an object.
- the evaluation of this imaging performance is generally performed first to fully characterize performance over the tool's exposure field and second to monitor tool performance, as part of a process control scheme, when the tool is used to produce images for the manufacture of, for example, an integrated circuit (IC) .
- IC integrated circuit
- test pattern reticles or masks have been developed by lithographic tool manufacturers and users that have a number of specially designed test structures placed at a number of locations within the exposure field.
- An example of such a test pattern having nine groupings of test structures spread over an exposure field is seen, for example, in FIG. 14 of U.S. Patent No. 4,908,656, issued March 13, 1990 to Suwa et al . , which is of different test structures formed therein are designed to enable the evaluation of the different factors that influence imaging performance .
- the evaluation of imaging performance begins by exposing the test pattern at different locations on a substrate using a matrix of exposure conditions, for example as indicated in the exposure time vs. focus matrix depicted in FIG. 17 of Suwa et al .. Once this matrix is completed, the various test structures are evaluated for each test pattern. While a variety of criteria are evaluated to fully characterize imaging performance, the measurement of the size of a test structure, referred to as its critical dimension (CD), is among the most important. As these test images are generally quite small, a CD of 0.25 micron ( ⁇ m) or less is typical for today-' s high density ICs, a scanning electron microscope designed for such critical dimension measurements (CD-SEM) is generally used. -In this manner, the tool's imaging performance is characterized and a best set of exposure conditions selected.
- CD critical dimension
- imaging performance must still be evaluated to ensure that it remains within process control limits.
- users monitor imaging performance by measuring the CD of a test structure, developed for this second task, that is placed within the exposure field. In this manner, the test structure is present in each exposure field on the substrate or wafer and can be measured.
- the number of measurements per wafer and the number of wafers measured per lot, or group of wafers will vary as a function of the process control scheme employed.
- these in-process measurements are also generally performed using a CD-SEM.
- a third problem is the ability of even state of the art CD-SEMs to resolve the test structures adequately to make accurate measurements as these structure's sizes approach the resolution capability of the CD-SEM.
- wafers used for in-process measurements as part of a process control scheme are sometimes discarded or the photoresist layer removed, the wafer cleaned and reprocessed. Either alternative- resulting in increased costs and reduced yields.
- alternate methods for characterization of imaging performance and in-process monitoring of that performance are needed.
- One such alternate method reported to provide improved accuracy over CD-SEM measurements employs an electrical measurement of an array of test structures.
- the test structures of this method are formed in a conductive layer overlying a special test substrate where the structures have attached contact regions.
- a resist layer is exposed and the pattern of test structures developed and etched.
- the conductivity of the etched features are measured by an electrical means.
- a linewidth is calculated.
- a method for forming a critical dimension test mark (CDTM) and methods for both characterizing exposure tool imaging performance and in-process image performance monitoring, hereinafter referred- to as process control monitoring, using the CDTM formed are provided.
- CDTM critical dimension test mark
- process control monitoring uses the CDTM formed.
- the CDTM of some embodiments of the present invention is a doubly exposed region formed by superimposing a first feature or features on a reticle with a second feature or features on the reticle.
- the first and second feature or features employed are generated from a data base used to drive the exposure tool, for example as in an electron beam direct write exposure system.
- the CDTM of the present invention is formed using an exposure energy that is essentially equal to the energy needed to form a normal, singly exposed image.
- the CDTM formed by the method of the present invention provides benefits that overcome the deficiencies of the prior art by- essentially magnifying the size of prior art CD structures while maintaining an essentially normal exposure energy for the CDTM.
- the CDTM, formed by the methods of the present invention are used to determine the critical dimension (CD) of a feature, for example a CD test structure in the manner of the prior art, without actually measuring that feature.
- first portions of an image forming layer overlying a conventional substrate are exposed with a first exposure energy.
- a conventional reticle is used having a first feature or features positioned with a first orientation to define the first portions.
- the first exposure energy is less than the nominal energy needed to fully form a normal, singly exposed image" with the same reticle. In some embodiments, this first exposure energy is approximately one-half the nominal exposure energy.
- Second portions of the image forming layer are then exposed with a second exposure energy. This second exposure defines a second feature or features positioned at a second orientation such that an overlap region of the first and second features is formed.
- the sum of the first and second exposure energies is approximately equal to the nominal exposure energy.
- the first feature is repositioned to have the second orientation.
- the first and second features are different test features of essentially the same size and shape.
- the first and second features are different test features of essentially the same shape but different size.
- the overlap region hereinafter referred to as the critical dimension test mark (CDTM)
- CDTM critical dimension test mark
- an image is formed using a image forming device rather than a layer, for example a charge coupled device array (CCD) or the like can be used to form an image of the CDTM and to characterize exposure tool imaging performance.
- CCD charge coupled device array
- Embodiments of the present invention also include methods for using CDTMs formed to determine a critical dimension of a test feature without actually measuring that test feature. In this manner, not only can the imaging performance of an exposure tool over its exposure field be characterized, but also that imaging performance can be monitored while the exposure tool is used in a production mode.
- a critical dimension of a test feature without actually measuring that test feature.
- CDTM formed essentially magnify the CD of a test feature, for example by factors of approximately 10 or more
- embodiments of the present invention provide characterization and monitoring data without the need to use an expensive CD-SEM.
- an optical apparatus or device for example an apparatus that scans a laser beam or other optical beam over one or more CDTM's and detects a signal caused by diffraction, reflection or scattering of the scanned beam from the CDTM's can be used to measure the dimension of the CDTM.
- the. optical device for aligning a fiducial of a projected image from a reticle to a fiducial of a previous layer formed on the substrate is used to measure the dimension of the CDTM.
- optical devices are not typically employed as measurement tools, where such tools are used embodiments of the present invention include a software program to control the measurement process .
- the diffraction detecting device and control software employed for measuring the CDTM's formed are incorporated within the exposure tool.
- the optical measuring tool Is a stand alone system. It will be understood that while embodiments of the present invention have been described with reference to a device for detecting optical signals caused by diffraction from the CDTM of the present invention, other methods for measuring the size of the CDTM of the present invention are also appropriate. For example, in some embodiments of the present invention a measuring system employing a confocal microscope based detector is employed.
- FIG. 1 is a block diagram of a projection exposure system in accordance with embodiments of the present inven ion;
- FIGs . 2a-c depict steps of a method for forming a critical dimension test structures (CDTM) in accordance with an embodiment of the present invention
- FIG. 3 depicts the geometrical relationship that provides the magnification of a CD in accordance with an embodiment of the present invention
- FIG. 4 depicts a method of measuring a CDTM of the present invention in accordance with an embodiment of the present invention and a simulated output signal therefrom;
- FIG. 5 is a plot, at different values for the coherence factor, of simulated critical dimension values versus the simulated length of an image of a CDTM formed in accordance with embodiments of the present invention
- FIG. 6 is the data of FIG. 7 replotted to illustrate the excellent agreement between the length of the CDTM and width of CD bars, from which the CDTM is formed, over the range of partial coherence factors;
- FIG. 7 is a plot of simulated values that illustrate the magnification effect obtained by forming CDTM's in accordance. ith embodiments of the present invention.
- FIG. 8 is a flow chart depicting a method for defining an empirical constant in accordance with an embodiment of the present invention.
- FIGs. 9a and 9b are plots used to define the empirical constant in accordance with embodiments of the method of FIG. 8; and FIGs. 10a and 10b are graphs of actual measurements of CD bars versus a CDTM, formed in accordance with an embodiment of the present invention, at various focus positions.
- a projection exposure system 100 including an energy source 102 is shown.
- energy source 102 can be a high pressure mercury lamp, a krypton fluoride (KrF) laser, an electron beam radiation source or any other suitable energy emitting device, for example an ion beam source.
- the energy from energy source 102 passes through illumination optical system 106.
- Illumination optical system 106 collects the energy from energy source 102 and directs that energy in a regular manner through a reticle or mask 110. While illumination optical system 106 is depicted in Fig. 1 in block form, it will be understood that this is for illustrative reasons only, and that optical system 106 encompasses whatever suitable optical element that are necessary.
- illumination optical system 106 includes a lens structure or mirror optical system.
- system 106 includes electromagnetic lenses.
- Reticle 110 is positioned at the object plane of projection exposure system 100.
- energy used to define an object for example object 108
- Image 116 being representative of object 108.
- an image forming device or layer (not shown) is positioned at image plane 114, image 116 is formed thereon.
- Projection optical system 112 encompasses whatever suitable optical elements as are necessary to project an image of object 108 onto image plane 114.
- energy source 102 is a KrF laser
- projection system 112 includes a multiple element lens.
- projection system 112 includes a plurality of electromagnetic lenses.
- FIG. 2a-2c the several steps to form arrays of critical dimension test marks 40 (CDTM) in the manner of an embodiment of the present invention is depicted in an illustrative manner.
- CDTM critical dimension test marks 40
- FIG. 2c will be understood to depict "ideal" CDTMs, that is to say that CDTMs as they would theoretically be formed at the image plane of an exposure system (not shown) without comprehending any of the effects due to the various subsystems of the exposure tool, the image forming layer or device and the method of fixing the image in that layer or device .
- a first test structure 10 is depicted as a closely spaced array of ideal first CD bars 12 having a close spacing 14, wherein the width of each bar 12, CD- ⁇ is essentially equal to close spacing 14. Also shown is a second test structure 20. Structure 20 is depicted as a widely spaced array of ideal first CD bars 12 having a wide spacing 16, where the width of bars 12 is again CD- L and the width of wide spacing 16 is typically at least 5 times larger than that of CD bar 12.
- First structure 10 is representative of what is known in the art as a densely packed CD bar structure 10 and first structure 20 is representative of what is known in the art as an isolated CD bar structure 20. Generally both dense CD bar structures 10 and isolated CD bar structures 20 are used to characterize imaging performance, as CD measurements are known to vary between such structures . (See, Christopher J. Progler and William L. Krisa,
- CD X structures 10 and 20 will differ in the number of CD bars 12 and the size of the space between adjacent bars. For example, where both dense structure 10 and isolated structure 20 are 4 microns ( ⁇ m) wide, and CD bars 12 are nominally 250 nanometers (nm) wide, densely packed structure 10 has eight CD bars 12 and seven spaces 14; isolated bar structure 20 has three CD bars 12 and two spaces 16.
- ideal images, of both dense CD structure 10 and isolated CD structure 20- are formed, in accordance with the present invention, by exposing CD bars- 12 in a first exposure.
- a first exposure energy of approximately one-half the required energy for a fully formed image is employed, although other appropriate energies can be employed.
- second ideal images of an array of CD bars 22, having a width CD 2 are formed.
- Each second ideal image overlies at least a portion of the first ideal images and are positioned rotated with respect to CD bars 12 of the first image by an angle .
- an axis of rotation (not shown) is selected such that each bar 22 overlaps each bar 12 thus forming an array of overlap regions 30 for each CD structure 10 and 20.
- CD bar structures are exposed in a second exposure with a second energy equal to the required energy for a fully formed image less the energy of the first exposure .
- a second energy equal to the required energy for a fully formed image less the energy of the first exposure .
- only these regions receive an amount of energy required to fully form. an ideal image.
- CD bars 12 are shifted to be used for the second exposure.
- CD bars 12 and 22 are the same bars and widths CD X and CD 2 have the same value.
- CD bars 12 and 22 are employed, but with each having the same target CD value, therefore widths CD X and CD 2 are similar.
- CD bars 12 and 22 advantageously have different dimensions, as will be discussed.
- FIG. 2c an array of ideal critical dimension test marks 40 (CDTM) are,-sl ⁇ own for each ideal CD test structure 10 and 20.
- CDTM 40 corresponds to an overlap region 30 of FIG. 2b.
- each ideal CDTM has a length, L x for dense structure 10 and L 2 for isolated structure 20. It should be readily apparent that both L and L 2 are much larger than either CD X or CD 2 .
- FIG. 3 an enlarged representation of an ideal overlap region 30, or CDTM 40 (FIG. 2c) is depicted to illustrate the relationship between CD X and/or CD 2 to the length L of that region.
- CD bar 12 is exposed at a first energy and CD bar 22 is exposed at a second energy as previously described.
- CD bar 22 is oriented such that it is rotated with respect to CD bar 12 and overlaps bar 12 to form overlap region 30 or CDTM 40.
- CD bars 12 and 22 cross one another at points 34, length L thus being the distance between the crossing points 34. It is readily apparent that, advantageously, the distance L is not affected were CD bar 12 or CD bar 22 is displaced in the X or Y direction. Rather, length L is dependent only on the width o.f each bar, CD X and CD 2 , and the angle ⁇ .
- Equation 2 Equation 2
- k l2 is an empirical constant that comprehends the image lengthening effects due to the various subsystems of the exposure tool, the image forming layer or device and the method of fixing the image in that layer or device.
- the inventors have advantageous found that the relationship of Equation 2 is consistent over a range of different image forming layers and devices, for example I-line photoresists and chemically enhanced Deep-UV photoresist materials, and exposure tools and conditions of exposure, where the constant k is evaluated for each system of exposure system and image forming layer or device.
- Equation 1 L varies inversely with , thus as ⁇ is decreased, L increases.
- CO 1 and CD 2 are each 200 nanometers (nm) (the average CD is then also
- L is 2.3 ⁇ m, or a value for the average of CO 1 and CD 2 that is about 11.5 times larger than the either actual CD. Reducing ⁇ to 5° increases L to 4.6 ⁇ m which is now about 23 times larger than the CDs of the CD bars used to form the CDTM.
- This magnification is significant, as where .-a- CD bar having a CD of 200 nm would require a CD-SEM to effect a measurement, having a much larger L, for example 2 ⁇ m or more, allows -alternative measurement tools to be used.
- a light beam 60 is scanned in the X-direction across one or more CDTMs 50 on a substrate (not shown) and light reflected, scattered and/or diffracted by CDTMs 50 collected. As shown, the intensity of this collected light is represented by line 55.
- the intensity of the reflected, scattered and/or diffracted light increases as seen at point 56.
- the intensity depicted by line 55 reaches a maximum value and then decreases.
- beam 60 is beyond CDTMs 50.
- the measured distance L-. between points 56 and 57 is the length of the CDTMs 50.
- the method depicted by FIG. 4 can use a variety of sources for beam 60 and a variety of detectors to measure the intensity 55 of the light scattered and or diffracted by CDTMs 50.
- a laser light source and photomultiplier detection devices are employed.
- other methods of measuring CDTMs 50 can be used, for example a scanning confocal microscope based measuring device can also be employed.
- L/2 of a CDTM is shown for differing exposure conditions.
- CD bar test structures having a nominal CD of 350 nm are overlaid at an angle of rotation ⁇ of two degrees and exposed at best focus with partial coherence factors ( ⁇ ) of 0.54, 0.60 and 0.66.
- ⁇ partial coherence factors
- ⁇ partial coherence factors
- L/2 increases for the same CD.
- ku x CD ⁇ L s ⁇ Equation 3
- CD values can be determined- from the length of a CDTM.
- FIG. 6 the data of FIG. 5 is replotted to better illustrate the excellent agreement between the length of the CDTM and the value of the CD over the range of partial coherence factors used.
- CD values are represented by the line and values for L by the points .
- FIG. 7 is illustrative of the magnification effect obtained by forming CDTM's in accordance with embodiments of the present invention.
- the chart of FIG. 7 s-Hrows this magnification relationship to be linear, thus enhancing its usefulness.
- the target CD value for CD bars is 100 nm or 500 nm, a CDTM can be formed having a length L many times larger than the target CD.
- measuring length L of the CDTM will provide for the calculation of an accurate value for the CD. It will be understood that the advantages of using the CDTM of the present invention are more than merely being able to use optical measurement devices to take advantage of their relatively low cost and high measurement speed. Additionally, significantly better precision than possible for a SEM CD system can also be achieved. Thus, the 5 nm resolution of a typical SEM
- CD apparatus represents 2% of a CD bar having a 250 nm nominal value, whereas the 25 to 50 nm resolution possible with, for example a scanning diffraction detection system, is less than 1% of a lO ⁇ m CDTM.
- the applicable magnification factor employed to form the CDTM- an essentially uniform sized CDTM can be obtained regardless of the actual CD value desired. In this manner, measurements of the CDTMs formed can be more readily automated to save time and expense.
- the precision of the of the measurement tool can be maximized by selecting a CDTM having the best possible length L for the particular system selected.
- Steps 200A and 200B • form CDTMs in accordance with the previously described methods. However, rather than a single CDTM or single array of CDTMs at a single exposure condition, an exposure energy versus focus matrix of CDTMs is formed, each CDTM having the same known angle ⁇ .
- step.200 the same exposure energy versus focus position matrix is made, except that actual CD bars are used and CDTMs are not made. While in some embodiments, both the CDTM matrix and the CD bar matrix are formed on a single substrate, generally two substrates having essentially identical image forming layers disposed thereon are used. In step 210, real or actual images are formed.
- each- exposed substrate will be developed and the images of CDTMs and CD bars formed.
- CD bars or CDTMs in each of the exposure fields are measured, step 220, and the values obtained used to form a seven by seven matrix of values for the CDTMs and CD bars .
- the values measured for the CDTMs will be the length of the marks, L, while the values measured for the CD bars will be the width of the bars or CD.
- one row, column or diagonal from the CDTM matrix is selected, generally with values having the best focus position, and the product of these values and sin ( ) plotted, step 230, against CD values from the equivalent row, column or diagonal of the CD bar matrix.
- the slope of the best fit line to the points plotted is k .
- FIG. 9a is an example of such a plot.
- the values ⁇ ised to produce the plot of FIG. 9a are actual values at different exposure energies and best focus for Lsin( ) and CD, where L and CD are measured using the same CD-SEM.
- the slope of the best fit line 400a is 1.2734 and therefore represents the empirical constant k ⁇ 1 for the particular system used.
- FIG. 9b a similar graph to FIG. 9a is shown where all values measured in step 220 (FIG. 8) are plotted.
- FIGs. 10a and 10b are plots of actual values for the CD of CD bars measured with a CD-SEM and CDTMs measured with an optical tool, as described in FIG. 4.
- the solid line represents the CD bar measurements and the dashed line represents the length L of the CDTMs.
- the target CD for the CD bars is 170 nm
- the values obtained for the CDTM at each focus position are in excellent agreement with the CD measured with a CD-SEM.
- CDTMs critical dimension test marks
- methods for-measuring the length of these marks and relating that length to the width or critical dimension of CD bar structures have also been presented.
- the various plots of simulated and actual values obtained for the length L of a CDTM and the CD of a CD bar demonstrate the excellent correlation between L and CD. Therefore it should be readily apparent to a skilled practitioner of the art that the CDTMs of the present invention provide a method for "measuring" a CD value without the need of expensive, high resolution measuring tools such as a CD-SEM.
- CDTMs made in accordance with embodiments of the present invention can be measured using low cost, rapid optical measurement systems, it will also be readily apparent that these CDTMs also provide a method for determining CD values rapidly and at both a low capitalization cost and a low operating cost.
- optical measurement system for example diffraction detecting systems or confocal microscope based systems are not only less costly and faster than CD-SEMs or other similar systems, but can also provide measurement data with greater precision and accuracy due to the magnification factor as previously described.
- CDTMs in accordance with the present invention can be formed in scribe grid or other areas of production wafers, these CDTMs can be utilized for in-process measurements, such as are useful for a process control method as is known. Where the CDTMs of the present invention are used for in-process measurements, the further advantage of an essentially non-contaminating measurement method is provided. This in contrast to CD-SEM measurements which of_t-en result in contamination due to the effect of the electron beam on materials such as positive photoresist.
- CDTMs of the present invention results from the calculated CD value representing an average CD for the bars of the first and second exposure.
- a focus position versus exposure energy matrix is difficult to produce for CD bars having very small critical dimensions, for example CDs below about 200nm, because the depth of focus of existing exposure systems is too small to provide meaning data for such small CDs. Therefore, characterization and in-process monitoring is at best 'difficult.
- CDTMs in accordance with the present invention provide a mark having an average of two CDs, CD 3 . and CD 2 (see FIG. 3) , by using a relatively large CD with a very small CD, meaning full characterization and in-process monitoring data can be obtained.
- CD j is 150nm and a CD 2 of 350nm is selected to provide an average CD of 250nm for a first
- CDTM Compact Disc
- a second CDTM is also formed where both CD L and CD 2 are 350nm.
- an exposure versus focus matrix is prepared where both the first and second CDTM is in each exposure field.
- CD values are calculated for each of the first and second CDTMs and the results of second CDTM mathematically removed from the results of the first CDTM. In this manner, tool imaging performance for a 150nm CD bar is obtained.
- in-process monitoring of very small CDs can be performed where other methods do not produce reliable, reproducible data.
- CDTM structure can be used for both exposure tool characterization and in-process monitoring .for process control .
- correlation between characterization results and in-process measurements is assured.
- these results are obtained with a minimum of additional process complexity as only a double exposure of the images of standard CD structures as described previously is required to form CDTMs in accordance with the present invention.
- changing exposure energy and image orientation are readily accomplished using any of the commonly employed lithographic systems.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU62749/99A AU6274999A (en) | 1998-09-29 | 1999-09-28 | Method for forming a critical dimension test structure and its use |
EP99949992A EP1051664A4 (en) | 1998-09-29 | 1999-09-28 | Method for forming a critical dimension test structure and its use |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/163,049 US6094256A (en) | 1998-09-29 | 1998-09-29 | Method for forming a critical dimension test structure and its use |
US09/163,049 | 1998-09-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000019270A1 WO2000019270A1 (en) | 2000-04-06 |
WO2000019270A9 true WO2000019270A9 (en) | 2000-09-14 |
Family
ID=22588262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/022583 WO2000019270A1 (en) | 1998-09-29 | 1999-09-28 | Method for forming a critical dimension test structure and its use |
Country Status (5)
Country | Link |
---|---|
US (3) | US6094256A (en) |
EP (1) | EP1051664A4 (en) |
AU (1) | AU6274999A (en) |
TW (1) | TW448338B (en) |
WO (1) | WO2000019270A1 (en) |
Families Citing this family (57)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0973069A3 (en) * | 1998-07-14 | 2006-10-04 | Nova Measuring Instruments Limited | Monitoring apparatus and method particularly useful in photolithographically processing substrates |
US6608920B1 (en) * | 1998-10-29 | 2003-08-19 | Applied Materials, Inc. | Target acquisition technique for CD measurement machine |
JP3385325B2 (en) * | 1998-11-09 | 2003-03-10 | 日本電気株式会社 | Exposure method and exposure apparatus for lattice pattern |
US6493063B1 (en) * | 1999-06-24 | 2002-12-10 | Advanced Micro Devices, Inc. | Critical dimension control improvement method for step and scan photolithography |
JP2001166454A (en) * | 1999-12-07 | 2001-06-22 | Nikon Corp | Mask, exposure method, ray width measurement method and method manufacturing semiconductor device |
US6538721B2 (en) | 2000-03-24 | 2003-03-25 | Nikon Corporation | Scanning exposure apparatus |
US6635874B1 (en) | 2000-10-24 | 2003-10-21 | Advanced Micro Devices, Inc. | Self-cleaning technique for contamination on calibration sample in SEM |
KR100383258B1 (en) * | 2000-11-09 | 2003-05-09 | 삼성전자주식회사 | measurement error detecting method of measurement apparatus using scanning electron microscope |
TW460938B (en) * | 2000-11-14 | 2001-10-21 | United Microelectronics Corp | A structure of critical dimension bar |
JP2002163005A (en) * | 2000-11-29 | 2002-06-07 | Nikon Corp | Method of designing control system, control system, method of regulating control system, and method for exposure |
US6538753B2 (en) | 2001-05-22 | 2003-03-25 | Nikon Precision, Inc. | Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools |
US6956659B2 (en) * | 2001-05-22 | 2005-10-18 | Nikon Precision Inc. | Measurement of critical dimensions of etched features |
US6879376B2 (en) * | 2001-11-19 | 2005-04-12 | Pixelligent Technologies Llc | Method and apparatus for exposing photoresists using programmable masks |
WO2003044821A1 (en) * | 2001-11-21 | 2003-05-30 | Hitachi High-Technologies Corporation | Sample imaging method and charged particle beam system |
US7361894B2 (en) * | 2002-10-22 | 2008-04-22 | Hitachi High-Technologies Corporation | Method of forming a sample image and charged particle beam apparatus |
US7034296B2 (en) * | 2001-11-21 | 2006-04-25 | Hitachi High-Technologies Corporation | Method of forming a sample image and charged particle beam apparatus |
US6721691B2 (en) * | 2002-03-26 | 2004-04-13 | Timbre Technologies, Inc. | Metrology hardware specification using a hardware simulator |
US6853942B2 (en) * | 2002-03-26 | 2005-02-08 | Timbre Technologies, Inc. | Metrology hardware adaptation with universal library |
US6974653B2 (en) * | 2002-04-19 | 2005-12-13 | Nikon Precision Inc. | Methods for critical dimension and focus mapping using critical dimension test marks |
US6664121B2 (en) * | 2002-05-20 | 2003-12-16 | Nikon Precision, Inc. | Method and apparatus for position measurement of a pattern formed by a lithographic exposure tool |
US6777145B2 (en) | 2002-05-30 | 2004-08-17 | Chartered Semiconductor Manufacturing Ltd. | In-line focus monitor structure and method using top-down SEM |
AU2003300005A1 (en) | 2003-12-19 | 2005-08-03 | International Business Machines Corporation | Differential critical dimension and overlay metrology apparatus and measurement method |
US7848594B2 (en) * | 2004-02-13 | 2010-12-07 | Nikon Corporation | Measurement method, transfer characteristic measurement method, adjustment method of exposure apparatus, and device manufacturing method |
DE102004035595B4 (en) | 2004-04-09 | 2008-02-07 | Carl Zeiss Smt Ag | Method for adjusting a projection objective |
US7068753B2 (en) * | 2004-07-30 | 2006-06-27 | Jordan Valley Applied Radiation Ltd. | Enhancement of X-ray reflectometry by measurement of diffuse reflections |
US7120228B2 (en) * | 2004-09-21 | 2006-10-10 | Jordan Valley Applied Radiation Ltd. | Combined X-ray reflectometer and diffractometer |
US7076024B2 (en) * | 2004-12-01 | 2006-07-11 | Jordan Valley Applied Radiation, Ltd. | X-ray apparatus with dual monochromators |
US7474732B2 (en) | 2004-12-01 | 2009-01-06 | Jordan Valley Applied Radiation Ltd. | Calibration of X-ray reflectometry system |
US7600916B2 (en) * | 2004-12-01 | 2009-10-13 | Jordan Valley Semiconductors Ltd. | Target alignment for X-ray scattering measurements |
US7110491B2 (en) * | 2004-12-22 | 2006-09-19 | Jordan Valley Applied Radiation Ltd. | Measurement of critical dimensions using X-ray diffraction in reflection mode |
US7804934B2 (en) | 2004-12-22 | 2010-09-28 | Jordan Valley Semiconductors Ltd. | Accurate measurement of layer dimensions using XRF |
KR101374308B1 (en) * | 2005-12-23 | 2014-03-14 | 조르단 밸리 세미컨덕터즈 리미티드 | Accurate measurement of layer dimensions using xrf |
US7481579B2 (en) * | 2006-03-27 | 2009-01-27 | Jordan Valley Applied Radiation Ltd. | Overlay metrology using X-rays |
US20070274447A1 (en) * | 2006-05-15 | 2007-11-29 | Isaac Mazor | Automated selection of X-ray reflectometry measurement locations |
US7406153B2 (en) * | 2006-08-15 | 2008-07-29 | Jordan Valley Semiconductors Ltd. | Control of X-ray beam spot size |
IL180482A0 (en) * | 2007-01-01 | 2007-06-03 | Jordan Valley Semiconductors | Inspection of small features using x - ray fluorescence |
US7680243B2 (en) * | 2007-09-06 | 2010-03-16 | Jordan Valley Semiconductors Ltd. | X-ray measurement of properties of nano-particles |
US7932004B1 (en) * | 2008-10-02 | 2011-04-26 | Kla-Tencor Corporation | Feature identification for metrological analysis |
US8243878B2 (en) * | 2010-01-07 | 2012-08-14 | Jordan Valley Semiconductors Ltd. | High-resolution X-ray diffraction measurement with enhanced sensitivity |
US8687766B2 (en) | 2010-07-13 | 2014-04-01 | Jordan Valley Semiconductors Ltd. | Enhancing accuracy of fast high-resolution X-ray diffractometry |
US8437450B2 (en) | 2010-12-02 | 2013-05-07 | Jordan Valley Semiconductors Ltd. | Fast measurement of X-ray diffraction from tilted layers |
US8781070B2 (en) | 2011-08-11 | 2014-07-15 | Jordan Valley Semiconductors Ltd. | Detection of wafer-edge defects |
US9390984B2 (en) | 2011-10-11 | 2016-07-12 | Bruker Jv Israel Ltd. | X-ray inspection of bumps on a semiconductor substrate |
US8932961B2 (en) | 2012-02-13 | 2015-01-13 | Globalfoundries Inc. | Critical dimension and pattern recognition structures for devices manufactured using double patterning techniques |
US9389192B2 (en) | 2013-03-24 | 2016-07-12 | Bruker Jv Israel Ltd. | Estimation of XRF intensity from an array of micro-bumps |
US9632043B2 (en) | 2014-05-13 | 2017-04-25 | Bruker Jv Israel Ltd. | Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF |
US9726624B2 (en) | 2014-06-18 | 2017-08-08 | Bruker Jv Israel Ltd. | Using multiple sources/detectors for high-throughput X-ray topography measurement |
US9606073B2 (en) | 2014-06-22 | 2017-03-28 | Bruker Jv Israel Ltd. | X-ray scatterometry apparatus |
US9829448B2 (en) | 2014-10-30 | 2017-11-28 | Bruker Jv Israel Ltd. | Measurement of small features using XRF |
US9482519B2 (en) * | 2014-12-04 | 2016-11-01 | Globalfoundries Inc. | Measuring semiconductor device features using stepwise optical metrology |
US10684238B2 (en) | 2016-01-11 | 2020-06-16 | Bruker Technologies Ltd. | Method and apparatus for X-ray scatterometry |
US10121709B2 (en) * | 2017-01-24 | 2018-11-06 | Lam Research Corporation | Virtual metrology systems and methods for using feedforward critical dimension data to predict other critical dimensions of a wafer |
US10816487B2 (en) | 2018-04-12 | 2020-10-27 | Bruker Technologies Ltd. | Image contrast in X-ray topography imaging for defect inspection |
JP2019191169A (en) | 2018-04-23 | 2019-10-31 | ブルカー ジェイヴィ イスラエル リミテッドBruker Jv Israel Ltd. | X-ray source optical system for small-angle x-ray scatterometry |
US11181490B2 (en) | 2018-07-05 | 2021-11-23 | Bruker Technologies Ltd. | Small-angle x-ray scatterometry |
US11100272B2 (en) | 2018-08-17 | 2021-08-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer-to-design image analysis (WDIA) system |
US11781999B2 (en) | 2021-09-05 | 2023-10-10 | Bruker Technologies Ltd. | Spot-size control in reflection-based and scatterometry-based X-ray metrology systems |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3019930A1 (en) * | 1980-05-24 | 1981-12-03 | Ibm Deutschland Gmbh, 7000 Stuttgart | METHOD FOR THE MOIRE-METRIC TEST |
US4639142A (en) * | 1983-04-13 | 1987-01-27 | Rockwell International Corporation | Dimension monitoring technique for semiconductor fabrication |
US5262822A (en) * | 1984-11-09 | 1993-11-16 | Canon Kabushiki Kaisha | Exposure method and apparatus |
JPS62115830A (en) * | 1985-11-15 | 1987-05-27 | Fujitsu Ltd | Exposing method |
JPS62247525A (en) * | 1986-04-18 | 1987-10-28 | Mitsubishi Electric Corp | Alignment marks for semiconductor device |
US5140366A (en) * | 1987-05-29 | 1992-08-18 | Canon Kabushiki Kaisha | Exposure apparatus with a function for controlling alignment by use of latent images |
US4908656A (en) * | 1988-01-21 | 1990-03-13 | Nikon Corporation | Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision |
EP0338110B1 (en) * | 1988-04-21 | 1993-03-17 | International Business Machines Corporation | Method for forming a photoresist pattern and apparatus applicable with said method |
US4959326A (en) * | 1988-12-22 | 1990-09-25 | Siemens Aktiengesellschaft | Fabricating T-gate MESFETS employing double exposure, double develop techniques |
US5087537A (en) * | 1989-10-11 | 1992-02-11 | International Business Machines Corporation | Lithography imaging tool and related photolithographic processes |
JP2893823B2 (en) * | 1990-03-20 | 1999-05-24 | 株式会社ニコン | Positioning method and apparatus |
US5666205A (en) * | 1990-12-03 | 1997-09-09 | Nikon Corporation | Measuring method and exposure apparatus |
JP3341774B2 (en) * | 1990-12-03 | 2002-11-05 | 株式会社ニコン | Position displacement measurement method and accuracy check method of exposure equipment |
JP3024220B2 (en) * | 1990-12-25 | 2000-03-21 | 株式会社日立製作所 | Projection type exposure method and apparatus |
JP3336357B2 (en) * | 1991-04-24 | 2002-10-21 | 株式会社ニコン | Alignment device and alignment method |
JP3230094B2 (en) * | 1991-09-02 | 2001-11-19 | 株式会社ニコン | Method for measuring optical characteristics of projection optical system, apparatus for measuring optical characteristics, exposure method, and mask |
JPH05217872A (en) * | 1992-02-05 | 1993-08-27 | Nikon Corp | Inspection of projection optical system |
US5308741A (en) * | 1992-07-31 | 1994-05-03 | Motorola, Inc. | Lithographic method using double exposure techniques, mask position shifting and light phase shifting |
US5256505A (en) | 1992-08-21 | 1993-10-26 | Microunity Systems Engineering | Lithographical mask for controlling the dimensions of resist patterns |
US5615006A (en) * | 1992-10-02 | 1997-03-25 | Nikon Corporation | Imaging characteristic and asymetric abrerration measurement of projection optical system |
US5300786A (en) * | 1992-10-28 | 1994-04-05 | International Business Machines Corporation | Optical focus phase shift test pattern, monitoring system and process |
JP3198310B2 (en) * | 1993-01-06 | 2001-08-13 | 株式会社ニコン | Exposure method and apparatus |
WO1994024610A1 (en) * | 1993-04-13 | 1994-10-27 | Astarix, Inc. | High resolution mask programmable via selected by low resolution photomasking |
KR0128828B1 (en) * | 1993-12-23 | 1998-04-07 | 김주용 | Forming method of contact hole in the semiconductor device |
DE69524288T2 (en) | 1994-05-31 | 2002-05-23 | Japan Em Kk | Apparatus and scale for measuring a dimension of an object |
US5629772A (en) | 1994-12-20 | 1997-05-13 | International Business Machines Corporation | Monitoring of minimum features on a substrate |
US5652084A (en) * | 1994-12-22 | 1997-07-29 | Cypress Semiconductor Corporation | Method for reduced pitch lithography |
US5805290A (en) * | 1996-05-02 | 1998-09-08 | International Business Machines Corporation | Method of optical metrology of unresolved pattern arrays |
JP3551660B2 (en) * | 1996-10-29 | 2004-08-11 | ソニー株式会社 | Exposure pattern correction method, exposure pattern correction apparatus, and exposure method |
TW357262B (en) * | 1996-12-19 | 1999-05-01 | Nikon Corp | Method for the measurement of aberration of optical projection system, a mask and a exposure device for optical project system |
-
1998
- 1998-09-29 US US09/163,049 patent/US6094256A/en not_active Expired - Lifetime
-
1999
- 1999-09-28 AU AU62749/99A patent/AU6274999A/en not_active Abandoned
- 1999-09-28 EP EP99949992A patent/EP1051664A4/en not_active Withdrawn
- 1999-09-28 WO PCT/US1999/022583 patent/WO2000019270A1/en not_active Application Discontinuation
- 1999-09-29 TW TW088116748A patent/TW448338B/en not_active IP Right Cessation
-
2000
- 2000-07-13 US US09/615,636 patent/US6449031B1/en not_active Expired - Lifetime
-
2002
- 2002-07-17 US US10/198,701 patent/US6750952B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1051664A1 (en) | 2000-11-15 |
US6750952B2 (en) | 2004-06-15 |
US6449031B1 (en) | 2002-09-10 |
AU6274999A (en) | 2000-04-17 |
TW448338B (en) | 2001-08-01 |
EP1051664A4 (en) | 2005-06-15 |
US6094256A (en) | 2000-07-25 |
US20020180948A1 (en) | 2002-12-05 |
WO2000019270A1 (en) | 2000-04-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6094256A (en) | Method for forming a critical dimension test structure and its use | |
US6317211B1 (en) | Optical metrology tool and method of using same | |
KR100276852B1 (en) | Feature size control system using tone reversing patterns | |
US7368208B1 (en) | Measuring phase errors on phase shift masks | |
KR100301648B1 (en) | Metrology method using tone-reversing pattern | |
KR100225230B1 (en) | Target for determining bias or overlay error in a substrate formed by a lithographic process | |
US6128089A (en) | Combined segmented and nonsegmented bar-in-bar targets | |
KR100276849B1 (en) | Optically measurable serpentine edge tone reversed targets | |
US5757507A (en) | Method of measuring bias and edge overlay error for sub-0.5 micron ground rules | |
US6137578A (en) | Segmented bar-in-bar target | |
US6063531A (en) | Focus monitor structure and method for lithography process | |
JP3265668B2 (en) | How to calculate the best focus position | |
EP0267721A2 (en) | Determination of best focus for step and repeat projection aligners | |
JP4057847B2 (en) | Lithographic projection apparatus calibration method, patterning apparatus, and device manufacturing method | |
WO2002021075A1 (en) | Determination of center of focus by diffraction signature analysis | |
US6885429B2 (en) | System and method for automated focus measuring of a lithography tool | |
US5936738A (en) | Focus monitor for alternating phase shifted masks | |
US5973771A (en) | Pupil imaging reticle for photo steppers | |
US6777145B2 (en) | In-line focus monitor structure and method using top-down SEM | |
JP2587456B2 (en) | Focal plane measurement method for scanning projection aligner | |
US6556286B1 (en) | Inspection system for the pupil of a lithographic tool | |
US6323938B1 (en) | Method of characterizing photolithographic tool performance and photolithographic tool thereof | |
US5616438A (en) | Reticle and a method for measuring blind setting accuracy using the same | |
JPH05217872A (en) | Inspection of projection optical system | |
Nakao et al. | Simple focus monitoring by eccentric illumination aperture |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 1999949992 Country of ref document: EP |
|
AK | Designated states |
Kind code of ref document: C2 Designated state(s): AL AM AT AU AZ BA BB BG BR BY CA CH CN CU CZ DE DK EE ES FI GB GE HU IL IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK TJ TM TR TT UA UG UZ VN |
|
AL | Designated countries for regional patents |
Kind code of ref document: C2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/10-10/10, DRAWINGS, REPLACED BY NEW PAGES 1/6-6/6; DUE TO LATE TRANSMITTAL BY THE RECEIVINGOFFICE |
|
WWP | Wipo information: published in national office |
Ref document number: 1999949992 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1999949992 Country of ref document: EP |