WO2000022682A3 - Solid-state photoelectric device - Google Patents

Solid-state photoelectric device Download PDF

Info

Publication number
WO2000022682A3
WO2000022682A3 PCT/US1999/023409 US9923409W WO0022682A3 WO 2000022682 A3 WO2000022682 A3 WO 2000022682A3 US 9923409 W US9923409 W US 9923409W WO 0022682 A3 WO0022682 A3 WO 0022682A3
Authority
WO
WIPO (PCT)
Prior art keywords
channel layer
electrodes
photoactive
nanoparticles
solid
Prior art date
Application number
PCT/US1999/023409
Other languages
French (fr)
Other versions
WO2000022682A2 (en
Inventor
Joshua S Salafsky
Original Assignee
Univ Columbia
Joshua S Salafsky
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Columbia, Joshua S Salafsky filed Critical Univ Columbia
Priority to AU13119/00A priority Critical patent/AU1311900A/en
Priority to CA2346294A priority patent/CA2346294C/en
Priority to EP99956523A priority patent/EP1129496A2/en
Publication of WO2000022682A2 publication Critical patent/WO2000022682A2/en
Publication of WO2000022682A3 publication Critical patent/WO2000022682A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
    • H01L25/043—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0384—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including other non-monocrystalline materials, e.g. semiconductor particles embedded in an insulating material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/114—Poly-phenylenevinylene; Derivatives thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

A solid state photovoltaic device is formed on a substrate and includes a photoactive channel layer interposed between a pair of electrodes. The photoactive channel layer includes a first material which absorbs light and operates as a hole carrier. Within the first material are nanoparticles of a second material which operate as electron carriers. The nanoparticles are distributed within the photoactive channel layer such that, predominantly, the charge path between the two electrodes at any given location includes only a single nanocrystal. Because a majority of electrons are channeled to the electrodes via single nanocrystal conductive paths, the resulting architecture is referred to as a channel architecture.
PCT/US1999/023409 1998-10-09 1999-10-08 Solid-state photoelectric device WO2000022682A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU13119/00A AU1311900A (en) 1998-10-09 1999-10-08 Solid-state photoelectric device
CA2346294A CA2346294C (en) 1998-10-09 1999-10-08 Solid-state photoelectric device
EP99956523A EP1129496A2 (en) 1998-10-09 1999-10-08 Solid-state photoelectric device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10375898P 1998-10-09 1998-10-09
US60/103,758 1998-10-09

Publications (2)

Publication Number Publication Date
WO2000022682A2 WO2000022682A2 (en) 2000-04-20
WO2000022682A3 true WO2000022682A3 (en) 2001-02-01

Family

ID=22296890

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/023409 WO2000022682A2 (en) 1998-10-09 1999-10-08 Solid-state photoelectric device

Country Status (5)

Country Link
US (2) US6239355B1 (en)
EP (1) EP1129496A2 (en)
AU (1) AU1311900A (en)
CA (1) CA2346294C (en)
WO (1) WO2000022682A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8962783B2 (en) 2006-10-11 2015-02-24 Merck Patent Gmbh Photovoltaic cell with silole-containing polymer
US8975512B2 (en) 2005-12-21 2015-03-10 Merck Patent Gmbh Tandem photovoltaic cells
US9123895B2 (en) 2006-10-11 2015-09-01 Merck Patent Gmbh Photovoltaic cell with thiazole-containing polymer

Families Citing this family (94)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0917208A1 (en) * 1997-11-11 1999-05-19 Universiteit van Utrecht Polymer-nanocrystal photo device and method for making the same
US6303500B1 (en) * 1999-02-24 2001-10-16 Micron Technology, Inc. Method and apparatus for electroless plating a contact pad
AUPP931799A0 (en) * 1999-03-18 1999-04-15 Sustainable Technologies Australia Limited Methods to implement interconnects in multi-cell regenerative photovoltaic photoelectrochemical devices
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US6900382B2 (en) 2002-01-25 2005-05-31 Konarka Technologies, Inc. Gel electrolytes for dye sensitized solar cells
US7414188B2 (en) * 2002-01-25 2008-08-19 Konarka Technologies, Inc. Co-sensitizers for dye sensitized solar cells
AT410859B (en) * 2000-04-27 2003-08-25 Qsel Quantum Solar Energy Linz METHOD FOR PRODUCING A PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER FROM TWO ORGANIC COMPONENTS
AT410729B (en) * 2000-04-27 2003-07-25 Qsel Quantum Solar Energy Linz PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER OF TWO MOLECULAR ORGANIC COMPONENTS
US7186911B2 (en) * 2002-01-25 2007-03-06 Konarka Technologies, Inc. Methods of scoring for fabricating interconnected photovoltaic cells
AT411306B (en) * 2000-04-27 2003-11-25 Qsel Quantum Solar Energy Linz PHOTOVOLTAIC CELL WITH A PHOTOACTIVE LAYER OF TWO MOLECULAR ORGANIC COMPONENTS
US20030192584A1 (en) * 2002-01-25 2003-10-16 Konarka Technologies, Inc. Flexible photovoltaic cells and modules formed using foils
US20030192585A1 (en) * 2002-01-25 2003-10-16 Konarka Technologies, Inc. Photovoltaic cells incorporating rigid substrates
US6913713B2 (en) * 2002-01-25 2005-07-05 Konarka Technologies, Inc. Photovoltaic fibers
US6858158B2 (en) * 2002-01-25 2005-02-22 Konarka Technologies, Inc. Low temperature interconnection of nanoparticles
US7351907B2 (en) * 2002-01-25 2008-04-01 Konarka Technologies, Inc. Displays with integrated photovoltaic cells
US6949400B2 (en) * 2002-01-25 2005-09-27 Konarka Technologies, Inc. Ultrasonic slitting of photovoltaic cells and modules
US7205473B2 (en) * 2002-01-25 2007-04-17 Konarka Technologies, Inc. Photovoltaic powered multimedia greeting cards and smart cards
US6706963B2 (en) * 2002-01-25 2004-03-16 Konarka Technologies, Inc. Photovoltaic cell interconnection
US20050284513A1 (en) * 2002-08-08 2005-12-29 Christoph Brabec Chip card comprising an integrated energy converter
US6919119B2 (en) * 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
KR100394028B1 (en) * 2000-12-28 2003-08-06 엘지.필립스 엘시디 주식회사 Liquid crystal display device and method for manufacturing the same
WO2002071496A1 (en) * 2001-03-05 2002-09-12 The Trustees Of Columbia University In The City Of New York Solid-state electric device
US8618595B2 (en) * 2001-07-02 2013-12-31 Merck Patent Gmbh Applications of light-emitting nanoparticles
US6846565B2 (en) * 2001-07-02 2005-01-25 Board Of Regents, The University Of Texas System Light-emitting nanoparticles and method of making same
US6918946B2 (en) * 2001-07-02 2005-07-19 Board Of Regents, The University Of Texas System Applications of light-emitting nanoparticles
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US7005669B1 (en) 2001-08-02 2006-02-28 Ultradots, Inc. Quantum dots, nanocomposite materials with quantum dots, devices with quantum dots, and related fabrication methods
US6794265B2 (en) * 2001-08-02 2004-09-21 Ultradots, Inc. Methods of forming quantum dots of Group IV semiconductor materials
WO2003021635A2 (en) 2001-09-05 2003-03-13 Rensselaer Polytechnic Institute Passivated nanoparticles, method of fabrication thereof, and devices incorporating nanoparticles
US7777303B2 (en) * 2002-03-19 2010-08-17 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
IL146226A0 (en) * 2001-10-29 2002-12-01 Yissum Res Dev Co Near infra-red composite polymer-nanocrystal materials and electro-optical devices produced therefrom
DE10155346C1 (en) * 2001-11-10 2003-06-12 Fraunhofer Ges Forschung Solar cell and process for its production
WO2003065472A2 (en) * 2002-01-25 2003-08-07 Konarka Technologies, Inc. Structures and materials for dye sensitized solar cells
WO2003081683A1 (en) * 2002-03-19 2003-10-02 The Regents Of The University Of California Semiconductor-nanocrystal/conjugated polymer thin films
AU2003272275A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Organic species that facilitate charge transfer to or from nanostructures
US7572393B2 (en) * 2002-09-05 2009-08-11 Nanosys Inc. Organic species that facilitate charge transfer to or from nanostructures
AU2003298998A1 (en) * 2002-09-05 2004-04-08 Nanosys, Inc. Oriented nanostructures and methods of preparing
EP1537445B1 (en) * 2002-09-05 2012-08-01 Nanosys, Inc. Nanocomposites
US20050126628A1 (en) * 2002-09-05 2005-06-16 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
AU2003279708A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7534488B2 (en) * 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
AU2003287659A1 (en) * 2002-11-14 2004-06-15 Sam-Shajing Sun Photovoltaic devices based on a novel block copolymer
JP2007515361A (en) * 2003-03-06 2007-06-14 レンセラー・ポリテクニック・インスティチュート Rapid generation of nanoparticles from bulk solids at room temperature
US20040183070A1 (en) * 2003-03-21 2004-09-23 International Business Machines Corporation Solution processed pentacene-acceptor heterojunctions in diodes, photodiodes, and photovoltaic cells and method of making same
DE10326547A1 (en) * 2003-06-12 2005-01-05 Siemens Ag Tandem solar cell with a common organic electrode
DE10326546A1 (en) * 2003-06-12 2005-01-05 Siemens Ag Organic solar cell with an intermediate layer with asymmetric transport properties
US8742253B1 (en) * 2003-06-14 2014-06-03 InterPhases Solar Device configurations for CIS based solar cells
KR20060034239A (en) * 2003-06-26 2006-04-21 이 아이 듀폰 디 네모아 앤드 캄파니 Methods for forming patterns of a filled dielectric material on substrates
KR101132076B1 (en) * 2003-08-04 2012-04-02 나노시스, 인크. System and process for producing nanowire composites and electronic substrates therefrom
EP1513171A1 (en) * 2003-09-05 2005-03-09 Sony International (Europe) GmbH Tandem dye-sensitised solar cell and method of its production
GB0413398D0 (en) * 2004-06-16 2004-07-21 Koninkl Philips Electronics Nv Electronic device
US8592680B2 (en) * 2004-08-11 2013-11-26 The Trustees Of Princeton University Organic photosensitive devices
KR100882503B1 (en) * 2004-10-06 2009-02-06 한국과학기술연구원 Highly Efficient Counter Electrodes for Dye-sensitized Solar Cells and Method for Manufacturing Thereof
WO2006073562A2 (en) * 2004-11-17 2006-07-13 Nanosys, Inc. Photoactive devices and components with enhanced efficiency
US20060110618A1 (en) * 2004-11-24 2006-05-25 General Electric Company Electrodes for photovoltaic cells and methods for manufacture thereof
KR100682928B1 (en) * 2005-02-03 2007-02-15 삼성전자주식회사 Energy downconversion film and quantum dot film comprising quantum dot
EP1905064A2 (en) * 2005-06-24 2008-04-02 Applied Nanoworks, Inc. Nanoparticles and method of making thereof
US7772485B2 (en) * 2005-07-14 2010-08-10 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US20080006324A1 (en) * 2005-07-14 2008-01-10 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US20070267055A1 (en) * 2005-07-14 2007-11-22 Konarka Technologies, Inc. Tandem Photovoltaic Cells
US7781673B2 (en) * 2005-07-14 2010-08-24 Konarka Technologies, Inc. Polymers with low band gaps and high charge mobility
US8158881B2 (en) 2005-07-14 2012-04-17 Konarka Technologies, Inc. Tandem photovoltaic cells
EP1917558B1 (en) * 2005-08-22 2018-07-25 Merck Patent GmbH Displays with integrated photovoltaic cells
US20070079867A1 (en) * 2005-10-12 2007-04-12 Kethinni Chittibabu Photovoltaic fibers
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
WO2007112088A2 (en) * 2006-03-24 2007-10-04 Qd Vision, Inc. Hyperspectral imaging device
WO2007117698A2 (en) * 2006-04-07 2007-10-18 Qd Vision, Inc. Composition including material, methods of depositing material, articles including same and systems for depositing material
WO2007120877A2 (en) * 2006-04-14 2007-10-25 Qd Vision, Inc. Transfer surface for manufacturing a light emitting device
WO2007124445A2 (en) * 2006-04-21 2007-11-01 Innovalight, Inc. Organosilane-stabilized nanoparticles of si or ge in an oxide matrix
US20070254996A1 (en) * 2006-04-28 2007-11-01 Krzysztof Nauka Nanocrystal-polymer composite materials and methods of attaching nanocrystals to polymer molecules
WO2008111947A1 (en) * 2006-06-24 2008-09-18 Qd Vision, Inc. Methods and articles including nanomaterial
US20080035197A1 (en) * 2006-07-10 2008-02-14 Dmytro Poplavskyy Photoactive materials containing bulk and quantum-confined semiconductor structures and optoelectronic devices made therefrom
US20100139744A1 (en) * 2006-08-31 2010-06-10 Elena Rogojina Fullerene-capped group iv semiconductor nanoparticles and devices made therefrom
WO2008085210A2 (en) * 2006-09-12 2008-07-17 Qd Vision, Inc. Electroluminescent display useful for displaying a predetermined pattern
US20080078441A1 (en) * 2006-09-28 2008-04-03 Dmitry Poplavskyy Semiconductor devices and methods from group iv nanoparticle materials
US20080230782A1 (en) * 2006-10-09 2008-09-25 Homer Antoniadis Photoconductive devices with enhanced efficiency from group iv nanoparticle materials and methods thereof
EP2087529A2 (en) * 2006-11-15 2009-08-12 Innovalight, Inc. A method of fabricating a densified nanoparticle thin film with a set of occluded pores
TW200908409A (en) 2007-08-10 2009-02-16 Univ Nat Taiwan A tree-like nanostructure solar battery and its manufacturing method
KR100921476B1 (en) * 2007-08-29 2009-10-13 한국과학기술연구원 Dye-sensitized solar cell with metal oxide layer composed of metal oxide nanoparticles by electrospinning and the fabrication method thereof
US20100275982A1 (en) * 2007-09-04 2010-11-04 Malcolm Abbott Group iv nanoparticle junctions and devices therefrom
TW200915583A (en) * 2007-09-17 2009-04-01 Univ Nat Taiwan Science Tech Photoelectric electrodes capable of absorbing solar energy, fabrication methods, and applications thereof
WO2009137141A2 (en) * 2008-02-21 2009-11-12 Konarka Technologies, Inc. Tandem photovoltaic cells
US7704866B2 (en) * 2008-03-18 2010-04-27 Innovalight, Inc. Methods for forming composite nanoparticle-metal metallization contacts on a substrate
US8361834B2 (en) 2008-03-18 2013-01-29 Innovalight, Inc. Methods of forming a low resistance silicon-metal contact
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
CN102047098B (en) 2008-04-03 2016-05-04 Qd视光有限公司 Comprise the luminescent device of quantum dot
US7923368B2 (en) * 2008-04-25 2011-04-12 Innovalight, Inc. Junction formation on wafer substrates using group IV nanoparticles
US8455606B2 (en) * 2008-08-07 2013-06-04 Merck Patent Gmbh Photoactive polymers
TWI394309B (en) * 2009-12-30 2013-04-21 Ind Tech Res Inst Dye-sensitized solar cell and method forming the same
US11133390B2 (en) * 2013-03-15 2021-09-28 The Boeing Company Low temperature, thin film crystallization method and products prepared therefrom
KR102605375B1 (en) * 2016-06-29 2023-11-22 삼성전자주식회사 Organic photoelectronic device and image sensor
US11145822B2 (en) 2017-10-20 2021-10-12 Samsung Electronics Co., Ltd. Compound and photoelectric device, image sensor, and electronic device including the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784185A (en) * 1980-11-14 1982-05-26 Nippon Telegr & Teleph Corp <Ntt> Photoelectric converter
JPS59229863A (en) * 1983-06-13 1984-12-24 Oki Electric Ind Co Ltd Manufacture of color sensor
US4948976A (en) * 1989-02-09 1990-08-14 Servo Corporation Of America Multi-wavelength band infrared detector
WO1997015959A1 (en) * 1995-10-24 1997-05-01 Isa Ag Arch Method for making an electrochemical cell, and resulting electrochemical cell
WO1999039372A2 (en) * 1998-02-02 1999-08-05 Uniax Corporation Image sensors made from organic semiconductors

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3038952A (en) * 1959-05-20 1962-06-12 Hoffman Electronics Corp Method of making a solar cell panel
US3186873A (en) * 1959-09-21 1965-06-01 Bendix Corp Energy converter
NL6510097A (en) * 1965-08-04 1967-02-06
US3653971A (en) * 1969-07-09 1972-04-04 Lidorenko Nikolai S Semiconductor photoelectric generator
US3690953A (en) * 1970-09-10 1972-09-12 Us Air Force Vertical junction hardened solar cell
US4082570A (en) * 1976-02-09 1978-04-04 Semicon, Inc. High intensity solar energy converter
US4143297A (en) * 1976-03-08 1979-03-06 Brown, Boveri & Cie Aktiengesellschaft Information display panel with zinc sulfide powder electroluminescent layers
US4270263A (en) * 1977-02-14 1981-06-02 Texas Instruments Incorporated Glass support light energy converter
US4175981A (en) * 1978-07-03 1979-11-27 Xerox Corporation Photovoltaic cell comprising metal-free phthalocyanine
US4159212A (en) * 1978-09-18 1979-06-26 Atlantic Richfield Company Luminescent solar collector
JPS57153478A (en) * 1981-03-19 1982-09-22 Agency Of Ind Science & Technol Photoelectric conversion device
US4407320A (en) * 1981-09-08 1983-10-04 Texas Instruments Incorporated Large area, fault tolerant solar energy converter
JPS609179A (en) 1983-06-28 1985-01-18 Matsushita Electric Ind Co Ltd Photovoltaic element and beam irradiating method to said element
US4902567A (en) * 1987-12-31 1990-02-20 Loctite Luminescent Systems, Inc. Electroluminescent lamp devices using monolayers of electroluminescent materials
US5401587A (en) * 1990-03-27 1995-03-28 Kabushiki Kaisha Toyota Chuo Kenkyusho Anisotropic nanophase composite material and method of producing same
JP2999280B2 (en) * 1991-02-22 2000-01-17 キヤノン株式会社 Photovoltaic element
US5415700A (en) * 1993-12-10 1995-05-16 State Of Oregon, Acting By And Through The State Board Of Higher Education On Behalf Of Oregon State University Concrete solar cell
EP0744779A3 (en) * 1995-05-17 1998-10-21 Matsushita Battery Industrial Co Ltd A manufacturing method of compound semiconductor thinfilms and photoelectric device or solar cell using the same compound semiconductor thinfilms
US5674325A (en) * 1995-06-07 1997-10-07 Photon Energy, Inc. Thin film photovoltaic device and process of manufacture
US5720827A (en) * 1996-07-19 1998-02-24 University Of Florida Design for the fabrication of high efficiency solar cells
EP0917208A1 (en) * 1997-11-11 1999-05-19 Universiteit van Utrecht Polymer-nanocrystal photo device and method for making the same
EP0948004A1 (en) * 1998-03-26 1999-10-06 Akzo Nobel N.V. Method for making a photovoltaic cell containing a dye
EP1028475A1 (en) * 1999-02-09 2000-08-16 Sony International (Europe) GmbH Electronic device comprising a columnar discotic phase
US6649824B1 (en) * 1999-09-22 2003-11-18 Canon Kabushiki Kaisha Photoelectric conversion device and method of production thereof
US6919119B2 (en) * 2000-05-30 2005-07-19 The Penn State Research Foundation Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films
WO2002071496A1 (en) * 2001-03-05 2002-09-12 The Trustees Of Columbia University In The City Of New York Solid-state electric device
US6812636B2 (en) * 2001-03-30 2004-11-02 Candescent Technologies Corporation Light-emitting device having light-emissive particles partially coated with light-reflective or/and getter material
US20040003838A1 (en) * 2002-07-05 2004-01-08 Curtin Lawrence F. Nano photovoltaic/solar cells
AU2003279708A1 (en) * 2002-09-05 2004-03-29 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5784185A (en) * 1980-11-14 1982-05-26 Nippon Telegr & Teleph Corp <Ntt> Photoelectric converter
JPS59229863A (en) * 1983-06-13 1984-12-24 Oki Electric Ind Co Ltd Manufacture of color sensor
US4948976A (en) * 1989-02-09 1990-08-14 Servo Corporation Of America Multi-wavelength band infrared detector
WO1997015959A1 (en) * 1995-10-24 1997-05-01 Isa Ag Arch Method for making an electrochemical cell, and resulting electrochemical cell
WO1999039372A2 (en) * 1998-02-02 1999-08-05 Uniax Corporation Image sensors made from organic semiconductors

Non-Patent Citations (7)

* Cited by examiner, † Cited by third party
Title
CARTER S A ET AL: "ENHANCED LUMINANCE IN POLYMER COMPOSITE LIGHT EMITTING DEVICES", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 71, no. 9, 1 September 1997 (1997-09-01), pages 1145 - 1147, XP000720223, ISSN: 0003-6951 *
GREENHAM N C ET AL: "CHARGE SEPARATION AND TRANSPORT IN CONJUGATED POLYMER/CADMIUM SELENIDE NANOCRYSTAL COMPOSITES STUDIED BY PHOTOLUMINESCENCE QUENCHING AND PHOTOCONDUCTIVITY", SYNTHETIC METALS,CH,LAUSANNE, vol. 84, no. 1/03, 1 January 1997 (1997-01-01), pages 545 - 546, XP002060965, ISSN: 0379-6779 *
GREENHAM N C ET AL: "CHARGE SEPARATION AND TRANSPORT IN CONJUGATED-POLYMER/SEMICONDUCTOR-N ANOCRYSTAL COMPOSITES STUDIED BY PHOTOLUMINESCENCE QUENCHING AND PHOTOCONDUCTIVITY", PHYSICAL REVIEW, B. CONDENSED MATTER,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 54, no. 24, 15 December 1996 (1996-12-15), pages 17628 - 17637, XP002060964, ISSN: 0163-1829 *
J.S. SALAFSKY ET AL.: "Solid-state polymer-semiconductor nanocrystal photovoltaic devices", 2ND WORLD CONFERENCE ON PHOTOVOLTAIC SOLAR ENERGY CONVERSION, 6 July 1998 (1998-07-06) - 10 July 1998 (1998-07-10), Vienna, Austria, pages 272 - 275, XP002130865 *
J.S. SALAFSKY: "Exciton dissociation, charge transport, and recombination in ultrathin, conjugated polymer-TiO2 nanocrystal intermixed composites", PHYSICAL REVIEW, B. CONDENSED MATTER., vol. 59, no. 16, 15 April 1999 (1999-04-15), AMERICAN INSTITUTE OF PHYSICS. NEW YORK., US, pages 10885 - 10894, XP002130866, ISSN: 0163-1829 *
PATENT ABSTRACTS OF JAPAN vol. 006, no. 164 (E - 127) 27 August 1982 (1982-08-27) *
PATENT ABSTRACTS OF JAPAN vol. 009, no. 102 (E - 312) 4 May 1985 (1985-05-04) *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8975512B2 (en) 2005-12-21 2015-03-10 Merck Patent Gmbh Tandem photovoltaic cells
US8962783B2 (en) 2006-10-11 2015-02-24 Merck Patent Gmbh Photovoltaic cell with silole-containing polymer
US9123895B2 (en) 2006-10-11 2015-09-01 Merck Patent Gmbh Photovoltaic cell with thiazole-containing polymer

Also Published As

Publication number Publication date
AU1311900A (en) 2000-05-01
WO2000022682A2 (en) 2000-04-20
USRE39967E1 (en) 2008-01-01
EP1129496A2 (en) 2001-09-05
US6239355B1 (en) 2001-05-29
CA2346294C (en) 2011-06-28
CA2346294A1 (en) 2000-04-20

Similar Documents

Publication Publication Date Title
WO2000022682A3 (en) Solid-state photoelectric device
WO1999063614A8 (en) Method of manufacturing photoelectric cell and oxide semiconductor for photoelectric cell
JP5118041B2 (en) Encapsulated electrodes for organic devices
US6812399B2 (en) Photovoltaic cell
US20170117335A1 (en) Method and apparatus for detecting infrared radiation with gain
US8729528B2 (en) Quantum dot-fullerene junction optoelectronic devices
EP1672719A3 (en) Electroluminescent devices
EP2577747B1 (en) Method and apparatus for providing a charge blocking layer on an infrared up-conversion device
EP1213775A3 (en) Solid State Dye Sensitized Solar Cell
CA2325729A1 (en) Method for making a photovoltaic cell containing a dye
CA2297037A1 (en) Semiconductor devices and methods with tunnel contact hole sources
WO2000077829A3 (en) Intermediate band semiconductor photovoltaic solar cell
US9496315B2 (en) Top-gate bottom-contact organic transistor
WO2004053905A3 (en) Dye sensitized solar cells having foil electrodes
JP2004510352A5 (en)
WO2005106927A3 (en) Hot electron transistor
US10483325B2 (en) Light emitting phototransistor
US8967848B2 (en) Lighting device
WO2007138348A3 (en) Photovoltaic cell with mesh electrode
KR20150019132A (en) Light transmission type two sided solar cell
WO2005043581A3 (en) Light-emitting device with increased quantum efficiency
US8237050B2 (en) Solar cell with organic material in the photovoltaic layer and method for the production thereof
JPS6285477A (en) Photosemiconductor device
US8330146B2 (en) Organic photodetector
JP2001230443A (en) Optical semiconductor device

Legal Events

Date Code Title Description
ENP Entry into the national phase

Ref country code: AU

Ref document number: 2000 13119

Kind code of ref document: A

Format of ref document f/p: F

AK Designated states

Kind code of ref document: A2

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

ENP Entry into the national phase

Ref document number: 2346294

Country of ref document: CA

Ref country code: CA

Ref document number: 2346294

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 1999956523

Country of ref document: EP

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 1999956523

Country of ref document: EP