WO2000030077A9 - Differential vgmr sensor - Google Patents
Differential vgmr sensorInfo
- Publication number
- WO2000030077A9 WO2000030077A9 PCT/US1999/023119 US9923119W WO0030077A9 WO 2000030077 A9 WO2000030077 A9 WO 2000030077A9 US 9923119 W US9923119 W US 9923119W WO 0030077 A9 WO0030077 A9 WO 0030077A9
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vgmr
- magnetic
- layer
- sensor
- spacer
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/02—Recording, reproducing, or erasing methods; Read, write or erase circuits therefor
- G11B5/09—Digital recording
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3945—Heads comprising more than one sensitive element
- G11B5/3948—Heads comprising more than one sensitive element the sensitive elements being active read-out elements
- G11B5/3951—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes
- G11B5/3954—Heads comprising more than one sensitive element the sensitive elements being active read-out elements the active elements being arranged on several parallel planes the active elements transducing on a single track
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B2005/0002—Special dispositions or recording techniques
- G11B2005/0005—Arrangements, methods or circuits
- G11B2005/001—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure
- G11B2005/0013—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation
- G11B2005/0016—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers
- G11B2005/0018—Controlling recording characteristics of record carriers or transducing characteristics of transducers by means not being part of their structure of transducers, e.g. linearisation, equalisation of magnetoresistive transducers by current biasing control or regulation
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
Landscapes
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB0111769A GB2362985B (en) | 1998-11-20 | 1999-10-06 | A magnetic recording head |
DE19983808T DE19983808T1 (en) | 1998-11-20 | 1999-10-06 | Difference VGMR sensor |
US09/600,270 US6556388B1 (en) | 1998-11-20 | 1999-10-06 | Differential VGMR sensor |
JP2000583006A JP2003529199A (en) | 1998-11-20 | 1999-10-06 | Differential VGMR sensor |
KR1020017006305A KR20010075724A (en) | 1998-11-18 | 1999-10-06 | Differential vgmr sensor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10928898P | 1998-11-20 | 1998-11-20 | |
US60/109,288 | 1998-11-20 | ||
US11676399P | 1999-01-22 | 1999-01-22 | |
US60/116,763 | 1999-01-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000030077A1 WO2000030077A1 (en) | 2000-05-25 |
WO2000030077A9 true WO2000030077A9 (en) | 2000-09-21 |
Family
ID=26806822
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/023119 WO2000030077A1 (en) | 1998-11-18 | 1999-10-06 | Differential vgmr sensor |
Country Status (6)
Country | Link |
---|---|
US (1) | US6556388B1 (en) |
JP (1) | JP2003529199A (en) |
KR (1) | KR20010075724A (en) |
DE (1) | DE19983808T1 (en) |
GB (1) | GB2362985B (en) |
WO (1) | WO2000030077A1 (en) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621664B1 (en) * | 2000-02-28 | 2003-09-16 | Seagate Technology Llc | Perpendicular recording head having integrated read and write portions |
US6798623B2 (en) * | 2001-02-08 | 2004-09-28 | Seagate Technology Llc | Biased CPP sensor using spin-momentum transfer |
US6911826B2 (en) * | 2001-06-12 | 2005-06-28 | General Electric Company | Pulsed eddy current sensor probes and inspection methods |
US7271986B2 (en) * | 2002-05-15 | 2007-09-18 | Seagate Technology Llc | V-shape magnetic field sensor with anisotropy induced orthogonal magnetic alignment |
DE10236983A1 (en) * | 2002-08-13 | 2004-03-04 | Robert Bosch Gmbh | The magnetic sensor system |
US6963071B2 (en) * | 2002-11-25 | 2005-11-08 | Intel Corporation | Debris mitigation device |
US6714446B1 (en) * | 2003-05-13 | 2004-03-30 | Motorola, Inc. | Magnetoelectronics information device having a compound magnetic free layer |
US7183893B2 (en) * | 2004-02-04 | 2007-02-27 | Seagate Technology Llc | TMR sensor with oxidized alloy barrier layer and method for forming the same |
US7477490B2 (en) * | 2004-06-30 | 2009-01-13 | Seagate Technology Llc | Single sensor element that is naturally differentiated |
KR100647319B1 (en) * | 2005-02-05 | 2006-11-23 | 삼성전자주식회사 | Multi-bit magnetic memory device using spin-polarized current and methods of manufacturing and operating the same |
US7573684B2 (en) * | 2005-04-13 | 2009-08-11 | Seagate Technology Llc | Current-in-plane differential magnetic tri-layer sensor |
US7715154B2 (en) * | 2005-04-13 | 2010-05-11 | Seagate Technology Llc | Suppression of spin momentum transfer and related torques in magnetoresistive elements |
US7835116B2 (en) * | 2005-09-09 | 2010-11-16 | Seagate Technology Llc | Magnetoresistive stack with enhanced pinned layer |
DE102005060713B4 (en) * | 2005-12-19 | 2019-01-24 | Austriamicrosystems Ag | Magnetic field sensor arrangement and method for non-contact measurement of a magnetic field |
WO2008075610A1 (en) * | 2006-12-20 | 2008-06-26 | Alps Electric Co., Ltd. | Magnetic detector |
US20110007426A1 (en) | 2009-07-13 | 2011-01-13 | Seagate Technology Llc | Trapezoidal back bias and trilayer reader geometry to enhance device performance |
US20110026169A1 (en) * | 2009-07-28 | 2011-02-03 | Hardayal Singh Gill | Dual cpp gmr head using a scissor sensor |
US8582250B2 (en) * | 2009-12-04 | 2013-11-12 | Seagate Technology Llc | Double biasing for trilayer MR sensors |
US8390963B2 (en) * | 2011-04-25 | 2013-03-05 | Seagate Technology Llc | Trilayer reader with current constraint at the ABS |
WO2018199068A1 (en) * | 2017-04-25 | 2018-11-01 | コニカミノルタ株式会社 | Magnetic sensor |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5390061A (en) | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
JPH05183212A (en) | 1991-07-30 | 1993-07-23 | Toshiba Corp | Magneto-resistance effect element |
US5549978A (en) | 1992-10-30 | 1996-08-27 | Kabushiki Kaisha Toshiba | Magnetoresistance effect element |
US5576915A (en) * | 1993-03-15 | 1996-11-19 | Kabushiki Kaisha Toshiba | Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof |
JPH0721530A (en) * | 1993-06-30 | 1995-01-24 | Toshiba Corp | Magneto-resistance effect type head |
US5828525A (en) * | 1994-03-15 | 1998-10-27 | Kabushiki Kaisha Toshiba | Differential detection magnetoresistance head |
US5442508A (en) | 1994-05-25 | 1995-08-15 | Eastman Kodak Company | Giant magnetoresistive reproduce head having dual magnetoresistive sensor |
US5583725A (en) | 1994-06-15 | 1996-12-10 | International Business Machines Corporation | Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor |
US5576914A (en) | 1994-11-14 | 1996-11-19 | Read-Rite Corporation | Compact read/write head having biased GMR element |
US5701222A (en) * | 1995-09-11 | 1997-12-23 | International Business Machines Corporation | Spin valve sensor with antiparallel magnetization of pinned layers |
JPH09274710A (en) * | 1996-04-04 | 1997-10-21 | Fujitsu Ltd | Spin valve magneto-resistive effect head, its manufacture and magnetic recorder |
US5869963A (en) * | 1996-09-12 | 1999-02-09 | Alps Electric Co., Ltd. | Magnetoresistive sensor and head |
US5751521A (en) * | 1996-09-23 | 1998-05-12 | International Business Machines Corporation | Differential spin valve sensor structure |
US5859754A (en) * | 1997-04-03 | 1999-01-12 | Read-Rite Corporation | Magnetoresistive transducer having a common magnetic bias using assertive and complementary signals |
JPH10302203A (en) * | 1997-04-25 | 1998-11-13 | Hitachi Ltd | Vertical magnetic recorder |
US6469873B1 (en) * | 1997-04-25 | 2002-10-22 | Hitachi, Ltd. | Magnetic head and magnetic storage apparatus using the same |
US5818685A (en) * | 1997-05-05 | 1998-10-06 | Read-Rite Corporation | CIP GMR sensor coupled to biasing magnet with spacer therebetween |
US5748399A (en) | 1997-05-13 | 1998-05-05 | International Business Machines Corporation | Resettable symmetric spin valve |
US5825595A (en) * | 1997-05-13 | 1998-10-20 | International Business Machines Corporation | Spin valve sensor with two spun values separated by an insulated current conductor |
US5858455A (en) | 1997-10-09 | 1999-01-12 | International Business Machines Corporation | Method for forming a lateral giant magnetoresistance multilayer for a magnetoresistive sensor |
-
1999
- 1999-10-06 JP JP2000583006A patent/JP2003529199A/en active Pending
- 1999-10-06 WO PCT/US1999/023119 patent/WO2000030077A1/en not_active Application Discontinuation
- 1999-10-06 GB GB0111769A patent/GB2362985B/en not_active Expired - Fee Related
- 1999-10-06 DE DE19983808T patent/DE19983808T1/en not_active Withdrawn
- 1999-10-06 US US09/600,270 patent/US6556388B1/en not_active Expired - Fee Related
- 1999-10-06 KR KR1020017006305A patent/KR20010075724A/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
KR20010075724A (en) | 2001-08-09 |
DE19983808T1 (en) | 2002-01-10 |
WO2000030077A1 (en) | 2000-05-25 |
JP2003529199A (en) | 2003-09-30 |
GB2362985A (en) | 2001-12-05 |
GB0111769D0 (en) | 2001-07-04 |
US6556388B1 (en) | 2003-04-29 |
GB2362985B (en) | 2003-06-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6556388B1 (en) | Differential VGMR sensor | |
US7177122B2 (en) | Biasing for tri-layer magnetoresistive sensors | |
US7697242B2 (en) | Method for providing a self-pinned differential GMR sensor having a bias structure comprising layers of ferromagnetic and non-magnetic material selected to provide a net-zero magnetic moment | |
JP5771352B2 (en) | Magnetic reproducing recording head and manufacturing method thereof | |
JP3266552B2 (en) | MR read head, composite head including the same, and magnetic disk drive including the same | |
US7035058B2 (en) | Magneto-resistive effect element, magnetic sensor using magneto-resistive effect, magnetic head using magneto-resistive effect and magnetic memory | |
US9099125B1 (en) | Current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor structure with stacked sensors for minimization of the effect of head skew | |
JP2002150512A (en) | Magnetoresistive element and magnetoresistive magnetic head | |
JP2003526913A (en) | Magnetic element having bias magnetic layer structure | |
US8520344B2 (en) | Magnetoresistive device with enhanced pinned layer | |
JP2003045011A (en) | Spin valve type magneto-resistance effect reproducing head and its manufacturing method | |
JP2002353535A (en) | Magnetoresistive effect element, magnetoresistive effect type magnetic sensor, magnetoresistive effect type magnetic head, and magnetic memory | |
JP2009026400A (en) | Differential magnetoresistive magnetic head | |
US7016160B2 (en) | Differential CPP reader for perpendicular magnetic recording | |
US6762915B2 (en) | Magnetoresistive sensor with oversized pinned layer | |
US7038889B2 (en) | Method and apparatus for enhanced dual spin valve giant magnetoresistance effects having second spin valve self-pinned composite layer | |
US6587317B2 (en) | Spin valve sensor having a pinned layer structure composed of cobalt iron vanadium (CoFeV) | |
US7230802B2 (en) | Method and apparatus for providing magnetostriction control in a freelayer of a magnetic memory device | |
US6498707B1 (en) | Giant magnetoresistive sensor with a CrMnPt pinning layer and a NiFeCr seed layer | |
US6791805B2 (en) | Current-perpendicular-to-plane spin valve reader with reduced scattering of majority spin electrons | |
US6525911B1 (en) | Permeability offset of shield layers for correcting bias of a free layer structure in a spin valve sensor | |
TW200419171A (en) | A magnetic sensor | |
US6590749B1 (en) | Dual AP pinned spin valve sensor biased by opposite ferromagnetic coupling fields and opposite demagnetizing fields | |
JPH10294504A (en) | Magneto-resistance sensor | |
JP2002353533A (en) | Magnetoresistive effect element, magnetoresistive effect type magnetic sensor, magnetoresistive effect type magnetic head, and magnetic memory |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): DE GB JP KR SG US US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 09600270 Country of ref document: US |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: C2 Designated state(s): DE GB JP KR SG US US |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/28-28/28, DRAWINGS, REPLACED BY NEW PAGES 1/19-19/19; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
ENP | Entry into the national phase |
Ref document number: 200111769 Country of ref document: GB Kind code of ref document: A |
|
ENP | Entry into the national phase |
Ref document number: 2000 583006 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020017006305 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 1020017006305 Country of ref document: KR |
|
RET | De translation (de og part 6b) |
Ref document number: 19983808 Country of ref document: DE Date of ref document: 20020110 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 19983808 Country of ref document: DE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1020017006305 Country of ref document: KR |