WO2000034550A3 - Cvd processes using bi aryl - Google Patents

Cvd processes using bi aryl Download PDF

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Publication number
WO2000034550A3
WO2000034550A3 PCT/US1999/028833 US9928833W WO0034550A3 WO 2000034550 A3 WO2000034550 A3 WO 2000034550A3 US 9928833 W US9928833 W US 9928833W WO 0034550 A3 WO0034550 A3 WO 0034550A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide
film
aryl
cvd processes
ferroelectric
Prior art date
Application number
PCT/US1999/028833
Other languages
French (fr)
Other versions
WO2000034550A2 (en
Inventor
Frank S Hintermaier
Buskirk Peter C Van
Jeffrey F Roeder
Bryan C Hendrix
Thomas H Baum
Debra A Desrochers
Original Assignee
Infineon Technologies Ag
Advanced Tech Materials
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Advanced Tech Materials filed Critical Infineon Technologies Ag
Publication of WO2000034550A2 publication Critical patent/WO2000034550A2/en
Publication of WO2000034550A3 publication Critical patent/WO2000034550A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02356—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer

Abstract

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides adjacent to the substrate. The precursor of Bi oxide is a Bi complex which includes at least one aryl group and is decomposed at a decomposition temperature lower than 450 °C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.
PCT/US1999/028833 1998-12-09 1999-12-06 Cvd processes using bi aryl WO2000034550A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20854498A 1998-12-09 1998-12-09
US09/208,544 1998-12-09

Publications (2)

Publication Number Publication Date
WO2000034550A2 WO2000034550A2 (en) 2000-06-15
WO2000034550A3 true WO2000034550A3 (en) 2002-09-19

Family

ID=22774979

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/028833 WO2000034550A2 (en) 1998-12-09 1999-12-06 Cvd processes using bi aryl

Country Status (2)

Country Link
TW (1) TW575679B (en)
WO (1) WO2000034550A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004256510A (en) * 2003-02-26 2004-09-16 Toyoshima Seisakusho:Kk Bismuth source solution for chemical vapor deposition and method for forming bismuth-containing thin film using the same
CN105462586A (en) * 2015-11-30 2016-04-06 青岛大学 Orange long-afterglow luminescent material and preparation method thereof
CN110698195B (en) * 2019-11-12 2022-05-17 杭州电子科技大学 High-resistivity and high-piezoelectric-activity bismuth calcium titanate-based high-temperature piezoelectric ceramic and preparation method thereof
CN113321500B (en) * 2021-06-30 2022-06-24 山东大学 High Curie temperature piezoelectric ceramic and preparation method thereof

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1995002897A1 (en) * 1993-07-12 1995-01-26 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
EP0716162A1 (en) * 1994-12-06 1996-06-12 Sharp Kabushiki Kaisha Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
WO1996040690A1 (en) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
EP0760400A2 (en) * 1995-08-22 1997-03-05 Sony Corporation Process for producing bismuth compounds, and bismuth compounds
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
EP0766319A2 (en) * 1995-09-29 1997-04-02 Sony Corporation Capacitor having ferroelectric film for nonvolatile memory cell, and method of manufacturing the same
EP0781736A2 (en) * 1995-12-27 1997-07-02 Sharp Kabushiki Kaisha Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film
EP0795898A2 (en) * 1996-03-13 1997-09-17 Hitachi, Ltd. Ferroelectric element and method of producing the same
EP0849780A2 (en) * 1996-12-20 1998-06-24 Sharp Kabushiki Kaisha Method for manufacturing ferroelectric thin film, substrate covered with ferroelectric thin film, and capacitor
EP0878837A2 (en) * 1997-05-13 1998-11-18 Sharp Kabushiki Kaisha Ferroelectric thin film comprising a bufferlayer and a Bismuth layered compound
WO1999032685A1 (en) * 1997-12-23 1999-07-01 Siemens Aktiengesellschaft Method for selectively depositing bismuth based ferroelectric films

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5612082A (en) * 1991-12-13 1997-03-18 Symetrix Corporation Process for making metal oxides
WO1995002897A1 (en) * 1993-07-12 1995-01-26 Symetrix Corporation Chemical vapor deposition process for fabricating layered superlattice materials
US5527567A (en) * 1994-09-02 1996-06-18 Ceram Incorporated Metalorganic chemical vapor deposition of layered structure oxides
EP0716162A1 (en) * 1994-12-06 1996-06-12 Sharp Kabushiki Kaisha Ferroelectric thin film, ferroelectric thin film covering substrate and manufacturing method of ferroelectric thin film
WO1996040690A1 (en) * 1995-06-07 1996-12-19 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
EP0760400A2 (en) * 1995-08-22 1997-03-05 Sony Corporation Process for producing bismuth compounds, and bismuth compounds
EP0766319A2 (en) * 1995-09-29 1997-04-02 Sony Corporation Capacitor having ferroelectric film for nonvolatile memory cell, and method of manufacturing the same
EP0781736A2 (en) * 1995-12-27 1997-07-02 Sharp Kabushiki Kaisha Ferroelectric thin film, substrate provided with ferroelectric thin film, device having capacitor structure and method for manufacturing ferroelectric thin film
EP0795898A2 (en) * 1996-03-13 1997-09-17 Hitachi, Ltd. Ferroelectric element and method of producing the same
EP0849780A2 (en) * 1996-12-20 1998-06-24 Sharp Kabushiki Kaisha Method for manufacturing ferroelectric thin film, substrate covered with ferroelectric thin film, and capacitor
EP0878837A2 (en) * 1997-05-13 1998-11-18 Sharp Kabushiki Kaisha Ferroelectric thin film comprising a bufferlayer and a Bismuth layered compound
WO1999032685A1 (en) * 1997-12-23 1999-07-01 Siemens Aktiengesellschaft Method for selectively depositing bismuth based ferroelectric films

Also Published As

Publication number Publication date
TW575679B (en) 2004-02-11
WO2000034550A2 (en) 2000-06-15

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