WO2000051012A3 - Integrated circuit interconnect system - Google Patents

Integrated circuit interconnect system Download PDF

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Publication number
WO2000051012A3
WO2000051012A3 PCT/US2000/004715 US0004715W WO0051012A3 WO 2000051012 A3 WO2000051012 A3 WO 2000051012A3 US 0004715 W US0004715 W US 0004715W WO 0051012 A3 WO0051012 A3 WO 0051012A3
Authority
WO
WIPO (PCT)
Prior art keywords
interconnect system
terminal
esd
frequency response
devices
Prior art date
Application number
PCT/US2000/004715
Other languages
French (fr)
Other versions
WO2000051012A2 (en
WO2000051012A8 (en
Inventor
Charles A Miller
Original Assignee
Formfactor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/258,185 external-priority patent/US6448865B1/en
Application filed by Formfactor Inc filed Critical Formfactor Inc
Priority to AU33758/00A priority Critical patent/AU3375800A/en
Priority to JP2000601543A priority patent/JP2003526901A/en
Priority to EP00911945A priority patent/EP1200990A2/en
Publication of WO2000051012A2 publication Critical patent/WO2000051012A2/en
Publication of WO2000051012A3 publication Critical patent/WO2000051012A3/en
Publication of WO2000051012A8 publication Critical patent/WO2000051012A8/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
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    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5227Inductive arrangements or effects of, or between, wiring layers
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    • H01L23/60Protection against electrostatic charges or discharges, e.g. Faraday shields
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    • H01L23/62Protection against overvoltage, e.g. fuses, shunts
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    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0248Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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Abstract

In an interconnect system for providing access to a common I/O terminal for multiple circuit devices such as drivers (40), receivers (44) and electrostatic discharge (48, 50) (ESD) protection devices implemented on an IC (42, 46), each such device is provided with a separate contact pad (52, 54) within the IC (42, 46). The contact pads (52A, 52B or 54A, 54B) are linked to one another and to the IC I/O terminal though inductive conductors such as bond wires (58, 62), metalization layer traces (64) in the IC (42, 46), or legs (56, 60) of a forked, lithographically-defined spring contact formed on the IC (42, 46). The conductor inductance isolates the capacitane of the circuit devices from one another, thereby improving characteristics of the frequency response of the interconnect system. Also the ESD protection function is distributed among multiple ESD devices interconnected by series inductors to provide a multiple-pole filter at each IC terminal. The inductances of the conductors and various capacitances of the interconnect system are also appropriately adjusted to optimize desired interconnect system frequency response characteristics.
PCT/US2000/004715 1999-02-25 2000-02-23 Integrated circuit interconnect system WO2000051012A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU33758/00A AU3375800A (en) 1999-02-25 2000-02-23 Integrated circuit interconnect system
JP2000601543A JP2003526901A (en) 1999-02-25 2000-02-23 Integrated circuit interconnect system
EP00911945A EP1200990A2 (en) 1999-02-25 2000-02-23 Integrated circuit interconnect system

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US09/258,185 1999-02-25
US09/258,185 US6448865B1 (en) 1999-02-25 1999-02-25 Integrated circuit interconnect system
US09/510,657 2000-02-22
US09/510,657 US6459343B1 (en) 1999-02-25 2000-02-22 Integrated circuit interconnect system forming a multi-pole filter

Publications (3)

Publication Number Publication Date
WO2000051012A2 WO2000051012A2 (en) 2000-08-31
WO2000051012A3 true WO2000051012A3 (en) 2001-02-01
WO2000051012A8 WO2000051012A8 (en) 2001-12-06

Family

ID=26946481

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/004715 WO2000051012A2 (en) 1999-02-25 2000-02-23 Integrated circuit interconnect system

Country Status (5)

Country Link
US (2) US6459343B1 (en)
EP (1) EP1200990A2 (en)
JP (2) JP2003526901A (en)
KR (1) KR100640130B1 (en)
WO (1) WO2000051012A2 (en)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6459343B1 (en) * 1999-02-25 2002-10-01 Formfactor, Inc. Integrated circuit interconnect system forming a multi-pole filter
US6538538B2 (en) 1999-02-25 2003-03-25 Formfactor, Inc. High frequency printed circuit board via
US6597227B1 (en) * 2000-01-21 2003-07-22 Atheros Communications, Inc. System for providing electrostatic discharge protection for high-speed integrated circuits
AU2001243200A1 (en) * 2000-02-22 2001-09-03 Don Mccord Method and system for wafer and device-level testing of an integrated circuit
WO2002025296A2 (en) * 2000-09-22 2002-03-28 Don Mccord Method and system for wafer and device-level testing of an integrated circuit
DE10143173A1 (en) 2000-12-04 2002-06-06 Cascade Microtech Inc Wafer probe has contact finger array with impedance matching network suitable for wide band
WO2002058155A1 (en) * 2001-01-19 2002-07-25 Koninklijke Philips Electronics N.V. Semiconductor chip with internal esd matching
EP1418680A4 (en) * 2001-08-10 2005-04-06 Hitachi Metals Ltd Bypass filter; multi;band antenna switch circuit; and layered module composite part and communication device using them
WO2003052435A1 (en) 2001-08-21 2003-06-26 Cascade Microtech, Inc. Membrane probing system
US7289302B1 (en) * 2001-10-04 2007-10-30 Maxtor Corporation On slider inductors and capacitors to reduce electrostatic discharge damage
US6624999B1 (en) * 2001-11-20 2003-09-23 Intel Corporation Electrostatic discharge protection using inductors
US6816031B1 (en) 2001-12-04 2004-11-09 Formfactor, Inc. Adjustable delay transmission line
US20030120777A1 (en) * 2001-12-26 2003-06-26 First Data Corporation Forms auditing systems and methods
DE10214068B4 (en) * 2002-03-28 2009-02-19 Advanced Micro Devices, Inc., Sunnyvale ESD protection circuit for radio frequency output connections in an integrated circuit
KR100894803B1 (en) 2002-06-11 2009-04-30 세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨 Semiconductor filter circuit and method
US20030235019A1 (en) * 2002-06-19 2003-12-25 Ming-Dou Ker Electrostatic discharge protection scheme for flip-chip packaged integrated circuits
DE10231638B4 (en) * 2002-07-12 2011-07-28 Infineon Technologies AG, 81669 Integrated circuit arrangement
TW573350B (en) * 2002-10-25 2004-01-21 Via Tech Inc Integrated circuit with electrostatic discharge protection
JP4744786B2 (en) * 2003-04-23 2011-08-10 ルネサスエレクトロニクス株式会社 High frequency power amplification module
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
JP2007517231A (en) 2003-12-24 2007-06-28 カスケード マイクロテック インコーポレイテッド Active wafer probe
US7388424B2 (en) 2004-04-07 2008-06-17 Formfactor, Inc. Apparatus for providing a high frequency loop back with a DC path for a parametric test
US7466113B2 (en) * 2004-07-07 2008-12-16 02Micro International Limited Break-before-make sensing for drivers
US7327035B2 (en) * 2004-09-08 2008-02-05 Texas Instruments Incorporated System and method for providing a low frequency filter pole
WO2006031646A2 (en) 2004-09-13 2006-03-23 Cascade Microtech, Inc. Double sided probing structures
US7737553B2 (en) 2004-10-06 2010-06-15 Panasonic Corporation Semiconductor device
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
JP4506722B2 (en) * 2006-05-19 2010-07-21 ソニー株式会社 Semiconductor element coupling device, semiconductor element, high-frequency module, and semiconductor element coupling method
JP4702178B2 (en) * 2006-05-19 2011-06-15 ソニー株式会社 Semiconductor coupling device, semiconductor element, and high-frequency module
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
ATE447243T1 (en) 2007-11-26 2009-11-15 Siae Microelettronica Spa MICROWAVE MODULE
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US8107254B2 (en) * 2008-11-20 2012-01-31 International Business Machines Corporation Integrating capacitors into vias of printed circuit boards
WO2010059247A2 (en) 2008-11-21 2010-05-27 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
EP2384095B1 (en) * 2009-01-29 2014-10-15 Panasonic Corporation Differential transmission circuit and electronic device provided with the same
JP5578797B2 (en) 2009-03-13 2014-08-27 ルネサスエレクトロニクス株式会社 Semiconductor device
US8242384B2 (en) 2009-09-30 2012-08-14 International Business Machines Corporation Through hole-vias in multi-layer printed circuit boards
US8432027B2 (en) * 2009-11-11 2013-04-30 International Business Machines Corporation Integrated circuit die stacks with rotationally symmetric vias
US8310841B2 (en) 2009-11-12 2012-11-13 International Business Machines Corporation Integrated circuit die stacks having initially identical dies personalized with switches and methods of making the same
US8258619B2 (en) 2009-11-12 2012-09-04 International Business Machines Corporation Integrated circuit die stacks with translationally compatible vias
US8315068B2 (en) 2009-11-12 2012-11-20 International Business Machines Corporation Integrated circuit die stacks having initially identical dies personalized with fuses and methods of manufacturing the same
US9646947B2 (en) * 2009-12-22 2017-05-09 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Integrated circuit with inductive bond wires
JP2013183072A (en) * 2012-03-02 2013-09-12 Toshiba Corp Semiconductor device
CN106098642B (en) * 2012-07-06 2019-04-23 联咏科技股份有限公司 Chip-packaging structure
JP5752657B2 (en) * 2012-09-10 2015-07-22 株式会社東芝 Semiconductor device
JP6211772B2 (en) * 2013-02-14 2017-10-11 ローム株式会社 LSI ESD protection circuit and semiconductor device
CN104253134B (en) * 2013-06-28 2017-11-10 上海天马微电子有限公司 A kind of pixel cell electrostatic protection structure and imaging sensor
JP2015012571A (en) * 2013-07-02 2015-01-19 ラピスセミコンダクタ株式会社 Oscillator and phase-locked loop
WO2015076008A1 (en) * 2013-11-20 2015-05-28 株式会社村田製作所 Impedance conversion circuit and communication terminal apparatus
US9595217B2 (en) 2013-12-05 2017-03-14 Samsung Display Co., Ltd. Trace structure for improved electrical signaling
US10153238B2 (en) 2014-08-20 2018-12-11 Samsung Display Co., Ltd. Electrical channel including pattern voids
US9461810B2 (en) 2014-09-18 2016-10-04 Samsung Display Co., Ltd. Multi-drop channels including reflection enhancement
JP6597628B2 (en) 2014-10-24 2019-10-30 株式会社ソシオネクスト Semiconductor integrated circuit device
JP6579111B2 (en) * 2014-10-24 2019-09-25 株式会社ソシオネクスト Semiconductor integrated circuit device
US9935063B2 (en) * 2016-07-01 2018-04-03 Intel Corporation Rlink-on-die inductor structures to improve signaling
DE102017103803A1 (en) * 2017-02-23 2018-08-23 Infineon Technologies Ag An integrated circuit device and a device for protecting a circuit
TW201843945A (en) * 2017-03-03 2018-12-16 日商索尼半導體解決方案公司 Transmission device and communication system
US10128229B1 (en) 2017-11-13 2018-11-13 Micron Technology, Inc. Semiconductor devices with package-level configurability
US10867991B2 (en) * 2018-12-27 2020-12-15 Micron Technology, Inc. Semiconductor devices with package-level configurability
US10971458B2 (en) * 2019-01-07 2021-04-06 Credo Technology Group Limited Compensation network for high speed integrated circuits
KR102213561B1 (en) * 2019-05-09 2021-02-08 베렉스주식회사 Semiconductor device
JP7426702B2 (en) 2020-02-13 2024-02-02 ザインエレクトロニクス株式会社 semiconductor equipment
CN114093334B (en) * 2021-11-30 2022-09-06 长沙惠科光电有限公司 Display module, display device and electrostatic isolation method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851555A2 (en) * 1996-12-31 1998-07-01 STMicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US5869898A (en) * 1997-04-25 1999-02-09 Nec Corporation Lead-frame having interdigitated signal and ground leads with high frequency leads positioned adjacent a corner and shielded by ground leads on either side thereof

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4354268A (en) 1980-04-03 1982-10-12 Santek, Inc. Intelligent test head for automatic test system
US4342013A (en) 1980-08-25 1982-07-27 Pilgrim Electric Co. Bidirectional power line filter
JPS5873881A (en) 1981-10-29 1983-05-04 Advantest Corp Ic tester
US4472725A (en) 1982-02-01 1984-09-18 Century Iii Electronics Inc. LC Delay line for feedforward amplifier
US4616178A (en) 1982-05-27 1986-10-07 Harris Corporation Pulsed linear integrated circuit tester
US4837622A (en) 1985-05-10 1989-06-06 Micro-Probe, Inc. High density probe card
JPH02198158A (en) * 1989-01-27 1990-08-06 Hitachi Ltd Semiconductor device
US5012213A (en) 1989-12-19 1991-04-30 Motorola, Inc. Providing a PGA package with a low reflection line
US5090118A (en) 1990-07-31 1992-02-25 Texas Instruments Incorporated High performance test head and method of making
JPH04107940A (en) * 1990-08-29 1992-04-09 Hitachi Ltd Semiconductor device and its component parts
US5172051A (en) 1991-04-24 1992-12-15 Hewlett-Packard Company Wide bandwidth passive probe
JPH0555287A (en) * 1991-08-26 1993-03-05 Seiko Epson Corp Semiconductor integrated circuit device
GB2263980B (en) 1992-02-07 1996-04-10 Marconi Gec Ltd Apparatus and method for testing bare dies
US5182220A (en) 1992-04-02 1993-01-26 United Microelectronics Corporation CMOS on-chip ESD protection circuit and semiconductor structure
US5270673A (en) 1992-07-24 1993-12-14 Hewlett-Packard Company Surface mount microcircuit hybrid
US5424693A (en) 1993-01-13 1995-06-13 Industrial Technology Research Institute Surface mountable microwave IC package
US5309019A (en) 1993-02-26 1994-05-03 Motorola, Inc. Low inductance lead frame for a semiconductor package
US5536906A (en) 1993-07-23 1996-07-16 Texas Instruments Incorporated Package for integrated circuits
US5521406A (en) 1994-08-31 1996-05-28 Texas Instruments Incorporated Integrated circuit with improved thermal impedance
AU4283996A (en) 1994-11-15 1996-06-19 Formfactor, Inc. Electrical contact structures from flexible wire
US5546405A (en) 1995-07-17 1996-08-13 Advanced Micro Devices, Inc. Debug apparatus for an automated semiconductor testing system
US5642054A (en) 1995-08-08 1997-06-24 Hughes Aircraft Company Active circuit multi-port membrane probe for full wafer testing
JPH09121127A (en) * 1995-10-26 1997-05-06 Murata Mfg Co Ltd High frequency amplifier and integrated circuit device
US5744869A (en) 1995-12-05 1998-04-28 Motorola, Inc. Apparatus for mounting a flip-chip semiconductor device
US5901022A (en) 1997-02-24 1999-05-04 Industrial Technology Research Inst. Charged device mode ESD protection circuit
AU6964698A (en) * 1997-04-16 1998-11-11 Board Of Trustees Of The Leland Stanford Junior University Distributed esd protection device for high speed integrated circuits
WO1998052224A1 (en) 1997-05-15 1998-11-19 Formfactor, Inc. Lithographically defined microelectronic contact structures
US6008533A (en) 1997-12-08 1999-12-28 Micron Technology, Inc. Controlling impedances of an integrated circuit
US6459343B1 (en) * 1999-02-25 2002-10-01 Formfactor, Inc. Integrated circuit interconnect system forming a multi-pole filter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0851555A2 (en) * 1996-12-31 1998-07-01 STMicroelectronics, Inc. Integrated circuit with improved overvoltage protection
US5869898A (en) * 1997-04-25 1999-02-09 Nec Corporation Lead-frame having interdigitated signal and ground leads with high frequency leads positioned adjacent a corner and shielded by ground leads on either side thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN *

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US20030006856A1 (en) 2003-01-09
US6646520B2 (en) 2003-11-11
KR20020013504A (en) 2002-02-20
US6459343B1 (en) 2002-10-01
WO2000051012A2 (en) 2000-08-31
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KR100640130B1 (en) 2006-10-31
JP2003526901A (en) 2003-09-09

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