WO2000062331A2 - Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium - Google Patents
Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium Download PDFInfo
- Publication number
- WO2000062331A2 WO2000062331A2 PCT/US2000/008671 US0008671W WO0062331A2 WO 2000062331 A2 WO2000062331 A2 WO 2000062331A2 US 0008671 W US0008671 W US 0008671W WO 0062331 A2 WO0062331 A2 WO 0062331A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sic
- heterostructure
- alloy
- pure
- layer
- Prior art date
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 164
- 239000004065 semiconductor Substances 0.000 title claims abstract description 37
- 229910052732 germanium Inorganic materials 0.000 title claims abstract description 18
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title claims abstract description 11
- 229910021419 crystalline silicon Inorganic materials 0.000 title description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 190
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 36
- 239000000956 alloy Substances 0.000 claims abstract description 36
- 230000003287 optical effect Effects 0.000 claims abstract description 14
- 150000001875 compounds Chemical class 0.000 claims abstract description 11
- 238000002156 mixing Methods 0.000 claims abstract description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract 3
- 238000000034 method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 claims description 2
- 238000001311 chemical methods and process Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 claims description 2
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000000523 sample Substances 0.000 description 28
- 238000001228 spectrum Methods 0.000 description 17
- 238000002441 X-ray diffraction Methods 0.000 description 16
- 238000002513 implantation Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000005001 rutherford backscattering spectroscopy Methods 0.000 description 15
- 238000000137 annealing Methods 0.000 description 14
- 238000005259 measurement Methods 0.000 description 13
- 229910052710 silicon Inorganic materials 0.000 description 13
- 150000002500 ions Chemical class 0.000 description 12
- 238000001069 Raman spectroscopy Methods 0.000 description 10
- 238000006467 substitution reaction Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 238000001237 Raman spectrum Methods 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 7
- 229910052984 zinc sulfide Inorganic materials 0.000 description 7
- ZSBXGIUJOOQZMP-JLNYLFASSA-N Matrine Chemical compound C1CC[C@H]2CN3C(=O)CCC[C@@H]3[C@@H]3[C@H]2N1CCC3 ZSBXGIUJOOQZMP-JLNYLFASSA-N 0.000 description 6
- 238000010348 incorporation Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910000927 Ge alloy Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005212 lattice dynamic Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000000329 molecular dynamics simulation Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000009499 grossing Methods 0.000 description 2
- 238000002065 inelastic X-ray scattering Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000001845 vibrational spectrum Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910005742 Ge—C Inorganic materials 0.000 description 1
- -1 Si-L-j-Ge-- Inorganic materials 0.000 description 1
- 244000019194 Sorbus aucuparia Species 0.000 description 1
- 238000002056 X-ray absorption spectroscopy Methods 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004847 absorption spectroscopy Methods 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004422 calculation algorithm Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003970 interatomic potential Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229920002521 macromolecule Polymers 0.000 description 1
- 238000003913 materials processing Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 235000006414 serbal de cazadores Nutrition 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 229910002066 substitutional alloy Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Definitions
- the present invention uses larger amounts of Ge that form a three-part alloy of SiC (in equal parts) with Ge, for a total ratio of 1.1.x, where x is the portion of Ge.
- inventive alloy can also be written as:
- An object of this invention is to provide an improved material for semiconductor heterostructures .
- a new alloy is fabricated by mixing elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC) .
- the new alloy can be used alone or in multi- layered structures with other semiconductors to improve the performance of electrical and optical devices and circuits .
- Figure 1 is a graph for Bragg (0004) reflections comparing a) SiC:Ge as-implanted sample (thick solid line) b) pure SiC (dashed line) and c) SiC:Ge sample after RTA anneal at 1000 C for 1 minute, which indicated improved crystallinity of the annealed SiC:Ge compared to as- implanted sample;
- Figure 2 are graphs for: a) 2 eV He+ ion backscattering spectroscopy of pure SiC substrate prior to Ge implantation showing scattering from Si near 1.2 MeV and C near 0.4 MeV. b) 2MeV He+ ion backscattering spectroscopy of Ge implanted SiC:Ge showing the Ge peak near 1.6 MeV. c) 2MeV He+ ion backscattering spectroscopy of SiC:Ge after RTA annealing. The spectra relative ion intensity remain unchanged after annealing compared to the as-implanted SiC:Ge;
- Figure 3 is a graph of Raman spectra of a) SiC:Ge
- Figure 4 is a view along [100] of a substitutional Ge into 3C-SiC.
- Molecular dynamics computation is used to relax the 512 atoms supercell isotopically .
- C, Si and Ge are represented with spots of increasing diameter, (a) is obtained when Ge replaces Si , while (b) corresponds to the substitution of C by Ge .
- a modified Keating model which takes into account the anharmonicity of C is used to compute the atomic interactions;
- Figure 5 is a graph showing the evolution of the lattice parameter after incorporation of substitutional Ge in 3C-SiC.
- (b) is computed using a linear combination of the lattice parameters of Si, Ge and diamond, pondered by the relative concentrations
- Figure 6 is a graph showing localized phonon spectra around Ge calculated by the recursion method. Ge is assumed to replace only Si into the zinc-blende 3C-SiC crystal. Curves (a) to (f) are calculated for increasing substitutional Ge concentrations (respectively 0.2, 4.9, 9.4, 14.8, 18.4 and 50 %) ;
- Figure 7 is a graph showing the current-voltage characteristics prior to contact annealing, of p-type 4H- SiC wafer with regions implanted with Ge and N per the following wafer quadrants of Figure 8.
- Region 1 has Ge and N; region 2 has Ge only; region 3 has N only; region 4 is p-4H-SiC with no implants;
- Figure 8 illustrates an undoped wafer of p type 4H- SiC.
- the 4H-SiC implant regions are:
- Figure 9 is an X-ray diffraction from HBT structure with p-type 4H-SiC substrate implanted with: Ge at 1.6E16 cm-2, 750 KeV, and N at 1.45E12 cm-2, at 200 KeV for the base region, and Ga 2.75 E16 cm-2, 225 KeV, as an emitter region;
- Figure 10 shows the four regions of a wafer where region 1 is SiC with Ge,N, region 2 is with SiC with Ge, Region 3 is SiC with N, region 4 is SiC; and
- Figure 11 is a series of graphs showing capacitance voltage characteristics showing change in built-in voltage with Ge and with N doping.
- the present invention in its broadest aspect may be considered as a composition of matter: a new alloy fabricated by mixing the elemental semiconductor germanium (Ge) with the compound semiconductor silicon carbide (SiC).
- the new alloy, silicon carbide: germanium (SiC:Ge) can be used alone, or in multilayer structures with other semiconductors, to improve the performance of electronic and optical devices and circuits.
- Samples of SiC:Ge can be produced by ion- implanting Ge atoms into substrates of crystalline SiC. It should be possible, however, to fabricate it by other means, as later described.
- the SiC:Ge alloy has new properties that are distinct from either SiC or Ge, but it is chemically compatible with both of these and also with the semiconductor silicon (Si) that is used in integrated circuits (ICs) for computers.
- SiC:Ge is particularly attractive as a heterostructure material when used in conjunction with conventional silicon carbide because no other material has a lattice constant near enough to that of SiC to permit the interfaces to be nearly defect-free. Compatibility is highly important because pure silicon carbide is unique for making circuits that can sustain extreme operating conditions at high powers and high temperatures .
- the invention is thus a novel alloy or solid solution of the pure compound semiconductor SiC with the elemental semiconductor Ge.
- the novel features include: 1) a higher electrical conductivity than pure SiC; 2) changes in optical absorption; 3) a lattice parameter (atomic spacing) larger than that of SiC and smaller than that of Ge, and 4) ; inherent compatibility with conventional SiC (due to its similar lattice parameter) .
- Pure semiconducting SiC is presently under intense interest for fabricating electronic circuits that can operate under the extreme conditions of high-powers and high-temperatures . The reason for this capability is that SiC is chemically highly stable with a high melting point and is mechanically hard. It is even used mechanically in sandpaper because it is so robust.
- SiC:Ge can be fabricated onto semiconductor structures of pure SiC, Si, or Ge in order to create heterostructure devices and circuits with significantly enhanced capabilities compared to other alloys.
- SiC:Ge can improve the capabilities of circuits made from silicon carbide by providing adjacent regions or layers with slightly different conductivity, bandgap energy and chemical etching behavior.
- the lack of compatible materials has been a major limitation to the usefulness of SiC for commercial applications.
- SiC:Ge is a new alloy with its own inherent properties and it can also be used independently of pure SiC.
- SiC:Ge alloys have been prepared using the technique of ion-implanting Ge atoms into a substrate of SiC (hexagonal, 4H type) . It may also be possible to fabricate SiC:Ge by chemical vapor deposition (CVD) and by molecular beam epitaxy (MBE) . CVD is the presently standard technique for fabricating SiC.
- the alloy SiC:Ge has the potential: 1) for deposition onto conventional SiC for better electrical contacts; 2) for differences in chemical reactivity that can be exploited in materials processing (e.g. etch-stop layers); and 3) as strain-relieving layers with a lattice constant intermediate between those of pure SiC, pure Si, and pure Ge. Layers of SiC:Ge could behave as a bridge between conventional Si for integrated circuits, and with SiC, which is robust for high-power, high-temperature circuits.
- Possible uses include: a. layers with higher electrical conductivity fabricated onto other semiconductors, such as pure SiC, for improved active regions of transistors and other electronic devices, which may result in lower power consumption and increased electrical efficiency. b. layers with lower bandgap energies than pure SiC, forming energy barriers and quantum wells that can confine the charge carriers (electrons and holes) producing heterostructure devices with improved properties. Pairs of heterostructures in other semiconductor systems include: SiGe/Si and GaAs/GaAlAs . We propose SiC/SiC :Ge multilayers. c. layers to control the etching characteristics of structures (i.e. as etch-stop layers) due to different chemical reactivities with etchants compared to neighboring layers . d.
- etching rate differences between SiC and SiC:Ge allows micro-electromechanical systems (MEMS) to be made from SiC with greater robustness than with softer materials such as Si.
- MEMS micro-electromechanical systems
- Si is doped with materials that change its etch rate to selectively remove mechanical regions such as gears or optical elements from the unwanted background. With etch differences between SiC:Ge and SiC, it should be possible to make MEMS with SiC.
- a possible limitation is a reduction in thermal stability and ability to withstand high temperatures compared to pure SiC.
- the alloy may decompose, perhaps by precipitation, into separated regions of the constituents: SiC and Ge . It is expected that this is not a severe limitation because we have already annealed the SiC:Ge alloy up to temperatures of 1000°C with Ge remaining substitutional. Even higher temperatures may be possible. This may not be a limitation because this temperature is at the upper range of normal process temperatures .
- SiC:Ge has electrical and optical properties different from pure SiC. Therefore, regions of SiC:Ge can be fabricated onto semiconductor structures of pure SiC, Si, or Ge in order to create heterostructure devices and circuits with significantly enhanced capabilities compared to homogeneous materials.
- SiC:Ge can improve the capabilities of circuits made from silicon carbide that are useful for operation under high-temperature, high-power conditions.
- Many types of heterojunction devices can be made with the intrinsic advantages of SiC (high temperature, high power, as described above) .
- the single crystalline SiC substrate investigated for the Ge implantation is n-type nitrogen doped to 2.5 x 10 18 cm “3 , is 421.6 ⁇ m thick, and is from Cree Research, Inc.
- the sample was cleaned prior to implantation and analysis with a standard chemical rinse of methanol, acetone, and deionized water.
- the SiC substrate was ion implanted uniformly with Ge atoms from a hot filament electron bombardment ion source with an ion mass spectrometer for a period of 2000 seconds.
- the ion energy during the implant was 300 keV and the fluence was 2 x 10 16 cm "2 .
- the ion current was 1.5 ⁇ A providing a current density of about 1
- X-ray diffraction (XRD) measurements were made with a Philips X-pert diffractometer utilizing the Cu K ⁇ l wavelength in the symmetrical Bragg configuration at low resolution as described previously. (Appl . Phys . Lett . , 71, 26 (1997)) XRD results of the pure SiC and SiC:Ge implanted samples have indicated distinct differences in
- SiC:Ge Ge implanted 4H-SiC
- SiC:Ge Ge implanted 4H-SiC
- plot of Figure 1 shows a subtle feature near 35.2°.
- the X-ray pattern of Figure 1 shows a sharpened peak centered around 35.695° indicating an improved SiC:Ge layer with fewer defects.
- the shift toward the direction of 35.2° indicates a substitutional Ge content of about 4% applying Vegard's law. This value of Ge concentration is somewhat larger than that obtained from RBS which indicate a Ge content of approximately 1.2%.
- SiC:Ge layer thickness were determined to be 1.2% and 1600 A, respectively, as indicated by RUMP simulation results shown in Figure 2b which closely match the experimental data obtained by RBS as well as calculations performed with TRIM based on the implant conditions. There was no detectable change in the RBS data taken on the annealed SiC:Ge compared to the as implanted sample (see Figure 2c) .
- Raman spectra for pure and Ge ion-implanted SiC are illustrated in Figure 3 which were obtained with incident polarized laser light having a wavelength of 785 nm.
- Figure 3 shows three different spectra having varied sample properties.
- the spectra for pure 4H-SiC has distinct Raman peaks at 205 cm “1 , 770 cm “1 , and 970 cm “1 . These well-defined bands are also strongly evident in the Ge implanted SiC:Ge sample and they are believed to be associated with Si and C vibrational modes. Similar Raman spectra have also been reported for Si and C solid state structures previously. (Macromolecules , 29, 22 (1996))
- the two other spectra in the figure are for the SiC:Ge
- the sheet resistivity of the SiC:Ge sample was determined qualitatively by four point probe measurements.
- the four point probe measurements were performed in two different spatial regions of the SiC:Ge sample and compared to results obtained on a pure SiC sample.
- the measurements were made on the SiC:Ge sample just after Ge implantation and prior to annealing.
- the apparatus indicted an average sheet resistance of 584.75 and 301.35 ohms/square, respectively, indicating the conductivity of the Ge implanted material is nearly twice that of SiC.
- the substitutional implantation of Ge in SiC may play an important role in the electronic and optical properties required for several electronic device applications including those of high power, high frequency, and optoelectronics.
- the experimental observations to date on the ion implanted SiC:Ge sample investigated here include fundamental differences compared to those of pure SiC. For example, our measurements have shown that the x-ray diffraction pattern near the (0004) reflection in ion implanted SiC:Ge is significantly modified in comparison to that of the pure sample of 4H-SiC. The altered x-ray pattern is believed to be caused by the implantation of substitutional Ge atoms and the subsequent introduction of strain into the SiC lattice. The affect of thermal
- SiC-based microelectronics and optoelectronics may provide further device opportunities through bandgap and strain engineering.
- the crystal growth might not be simple, mainly because of the difference in lattice parameters and covalent radii between silicon germanium and diamond, but Ge seems to have a beneficial effect in the epitaxy of single-crystalline 3C-SiC on silicon.
- the local phonon density around carbon is computed, using the recursion method detailed in A. Hairie, F. Hairie, G. Nouet, E. Paumier, A. P. Sutton, "Polycristalline Semiconductors III- Physics and Technology", ed. H. P. Strunk, J. H. Werner, B. Fortin, O. Bonnaud, Vol. 37-38, 91 (1993) Copyright 1994 Scitec Publications Ltd, Switzerland, member of the Trans Tech Group of Publishers, ISBN 3-908450-04-7, Volumes 37-38 of Solid State Phenomena (Pt.
- the lattice parameter is obviously proportional to the mean size of the supercell after relaxation, and the results are displayed in Figure 5. If one assumes that Ge replaces Si only ( Figure 5(a)), then the lattice parameter equals to (0.43593 ⁇ 0.00002) + (0.000337 ⁇ 0.000002) y , where y stands for the Ge content .
- a Vegard' s law
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU58661/00A AU5866100A (en) | 1999-04-02 | 2000-03-31 | Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12755499P | 1999-04-02 | 1999-04-02 | |
US60/127,554 | 1999-04-02 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000062331A2 true WO2000062331A2 (en) | 2000-10-19 |
WO2000062331A3 WO2000062331A3 (en) | 2001-03-08 |
WO2000062331A9 WO2000062331A9 (en) | 2002-04-04 |
Family
ID=22430710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/008671 WO2000062331A2 (en) | 1999-04-02 | 2000-03-31 | Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU5866100A (en) |
WO (1) | WO2000062331A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7183593B2 (en) | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
DE102005049932A1 (en) * | 2005-10-19 | 2007-04-26 | Sicrystal Ag | Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation |
US9009064B2 (en) | 2006-03-31 | 2015-04-14 | Ebay Inc. | Contingent fee advertisement publishing service provider for interactive TV media system and method |
US20150220971A1 (en) * | 2014-01-31 | 2015-08-06 | Wal-Mart Stores, Inc. | Optimization and attribution of marketing resources |
US10249718B2 (en) * | 2017-04-24 | 2019-04-02 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator |
WO2024036799A1 (en) * | 2022-08-19 | 2024-02-22 | 电子科技大学长三角研究院(湖州) | Method for improving photocatalytic performance of single-layer gase |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4495262A (en) * | 1982-05-06 | 1985-01-22 | Konishiroku Photo Industry Co., Ltd. | Photosensitive member for electrophotography comprises inorganic layers |
US5272096A (en) * | 1992-09-29 | 1993-12-21 | Motorola, Inc. | Method for making a bipolar transistor having a silicon carbide layer |
US5401952A (en) * | 1991-10-25 | 1995-03-28 | Canon Kabushiki Kaisha | Signal processor having avalanche photodiodes |
US5604626A (en) * | 1995-02-10 | 1997-02-18 | Donnelly Corporation | Photochromic devices |
US5646073A (en) * | 1995-01-18 | 1997-07-08 | Lsi Logic Corporation | Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product |
-
2000
- 2000-03-31 AU AU58661/00A patent/AU5866100A/en not_active Abandoned
- 2000-03-31 WO PCT/US2000/008671 patent/WO2000062331A2/en active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4495262A (en) * | 1982-05-06 | 1985-01-22 | Konishiroku Photo Industry Co., Ltd. | Photosensitive member for electrophotography comprises inorganic layers |
US5401952A (en) * | 1991-10-25 | 1995-03-28 | Canon Kabushiki Kaisha | Signal processor having avalanche photodiodes |
US5272096A (en) * | 1992-09-29 | 1993-12-21 | Motorola, Inc. | Method for making a bipolar transistor having a silicon carbide layer |
US5646073A (en) * | 1995-01-18 | 1997-07-08 | Lsi Logic Corporation | Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product |
US5604626A (en) * | 1995-02-10 | 1997-02-18 | Donnelly Corporation | Photochromic devices |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7183593B2 (en) | 2003-12-05 | 2007-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heterostructure resistor and method of forming the same |
DE102005049932A1 (en) * | 2005-10-19 | 2007-04-26 | Sicrystal Ag | Growth of silicon carbide-germanium-volume mixed crystals, comprises producing silicon-, carbon- and germanium gas phase from two source materials containing silicon, carbon and germanium by sublimation and evaporation |
US9009064B2 (en) | 2006-03-31 | 2015-04-14 | Ebay Inc. | Contingent fee advertisement publishing service provider for interactive TV media system and method |
US20150220971A1 (en) * | 2014-01-31 | 2015-08-06 | Wal-Mart Stores, Inc. | Optimization and attribution of marketing resources |
US10102542B2 (en) * | 2014-01-31 | 2018-10-16 | Walmart Apollo, Llc | Optimization and attribution of marketing resources |
US10249718B2 (en) * | 2017-04-24 | 2019-04-02 | Kabushiki Kaisha Toshiba | Semiconductor device, method for manufacturing semiconductor device, inverter circuit, driving device, vehicle, and elevator |
WO2024036799A1 (en) * | 2022-08-19 | 2024-02-22 | 电子科技大学长三角研究院(湖州) | Method for improving photocatalytic performance of single-layer gase |
Also Published As
Publication number | Publication date |
---|---|
WO2000062331A3 (en) | 2001-03-08 |
AU5866100A (en) | 2000-11-14 |
WO2000062331A9 (en) | 2002-04-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Mooney | Strain relaxation and dislocations in SiGe/Si structures | |
US8187377B2 (en) | Non-contact etch annealing of strained layers | |
US7517776B2 (en) | Method for controlling dislocation positions in silicon germanium buffer layers | |
DE112007001605B4 (en) | P-type zinc oxide thin film and method of forming the same and light-emitting element | |
CN113228229A (en) | Method of manufacturing a semiconductor device including a superlattice having nitrogen diffused therein | |
Reddy et al. | Nature of the bulk defects in GaAs through high-temperature quenching studies | |
KR100525792B1 (en) | N-type semiconductor diamond and its fabrication method | |
WO2000062331A2 (en) | Semiconductor heterostructures with crystalline silicon carbide alloyed with germanium | |
Gerard | Advances in condensed matter and materials research | |
Wang et al. | Effects of H plasma passivation on the optical and electrical properties of GaAs-on-Si | |
Rogers et al. | ZnO thin film templates for GaN-based devices | |
JP2004087814A (en) | Method and apparatus for manufacturing integrated circuit device onto oxide substrate | |
Funk et al. | Magnetic Characterization of a Mn Based Ferromagnet on SixGe (1-xy) Sny with High Sn Content | |
Moll et al. | The effect of coimplantation on the electrical activity of implanted carbon in GaAs | |
Razeghi | Recent advances in III–V compounds on silicon | |
Page | Molecular Beam Epitaxy Growth and Characterization of Ultra-Wide Bandgap Materials and Devices | |
Petrov et al. | InAs/Si-based quantum-dot heterostructures for new-generation optoelectronic and microelectronic devices | |
Smit et al. | Silicon molecular beam epitaxy on arsenic‐implanted and laser‐processed silicon | |
Xu et al. | Fabrication of Nanostructures in Group IV Semiconductors. | |
Verucchi et al. | SiC film growth on Si (111) by supersonic beams of C 60 | |
Irish | Passivation of Gallium Arsenide Nanowires for Solar Cells | |
THACHERY | Synthesis and Characterization of Neodymium Sulfide Bulk Samples and Thin films | |
Saddow et al. | Implant anneal process for activating ion implanted regions in SiC epitaxial layers | |
Youn et al. | Investigation into the role of low-temperature GaN in n-GaN/InGaN/p-GaN double-heterostructure light-emitting diodes | |
Makita et al. | Beta Iron-disilicide (b-FeSi2) as an Environmentally Friendly Semiconductor for Space Use |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
AK | Designated states |
Kind code of ref document: C2 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: C2 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1/11-11/11, DRAWINGS, REPLACED BY NEW PAGES 1/13-13/13; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase in: |
Ref country code: JP |