WO2000067327A9 - Minimally-patterned semiconductor devices for display applications - Google Patents

Minimally-patterned semiconductor devices for display applications

Info

Publication number
WO2000067327A9
WO2000067327A9 PCT/US2000/012193 US0012193W WO0067327A9 WO 2000067327 A9 WO2000067327 A9 WO 2000067327A9 US 0012193 W US0012193 W US 0012193W WO 0067327 A9 WO0067327 A9 WO 0067327A9
Authority
WO
WIPO (PCT)
Prior art keywords
display applications
minimally
transistors
semiconductor devices
semiconductor layer
Prior art date
Application number
PCT/US2000/012193
Other languages
French (fr)
Other versions
WO2000067327A1 (en
Inventor
Paul S Drzaic
Karl R Amundson
Gregg M Duthaler
Peter T Kazlas
Yu Chen
Original Assignee
E Ink Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by E Ink Corp filed Critical E Ink Corp
Priority to AU49855/00A priority Critical patent/AU4985500A/en
Priority to EP00932073A priority patent/EP1186047A1/en
Priority to CA002372101A priority patent/CA2372101A1/en
Priority to JP2000616077A priority patent/JP2002543625A/en
Publication of WO2000067327A1 publication Critical patent/WO2000067327A1/en
Publication of WO2000067327A9 publication Critical patent/WO2000067327A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00

Abstract

A thin-film transistor array comprises at least first and second transistors. Each transistor comprises a source electrode, a drain electrode, a semiconductor electrode, a gate electrode, and a semiconductor layer. The semiconductor layer is continuous between the first and second transistors. The semiconductor layer is preferably unpatterned. In various display applications, the geometry of the transistors is selected to provide acceptable leakage currents. In a preferred embodiment, the transistor array is employed in an encapsulated electrophoretic display.
PCT/US2000/012193 1999-05-05 2000-05-05 Minimally-patterned semiconductor devices for display applications WO2000067327A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU49855/00A AU4985500A (en) 1999-05-05 2000-05-05 Minimally-patterned semiconductor devices for display applications
EP00932073A EP1186047A1 (en) 1999-05-05 2000-05-05 Minimally-patterned semiconductor devices for display applications
CA002372101A CA2372101A1 (en) 1999-05-05 2000-05-05 Minimally-patterned semiconductor devices for display applications
JP2000616077A JP2002543625A (en) 1999-05-05 2000-05-05 Minimal patterned semiconductor devices for display applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13264299P 1999-05-05 1999-05-05
US60/132,642 1999-05-05

Publications (2)

Publication Number Publication Date
WO2000067327A1 WO2000067327A1 (en) 2000-11-09
WO2000067327A9 true WO2000067327A9 (en) 2002-07-18

Family

ID=22454947

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/012193 WO2000067327A1 (en) 1999-05-05 2000-05-05 Minimally-patterned semiconductor devices for display applications

Country Status (5)

Country Link
EP (1) EP1186047A1 (en)
JP (1) JP2002543625A (en)
AU (1) AU4985500A (en)
CA (1) CA2372101A1 (en)
WO (1) WO2000067327A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8928562B2 (en) 2003-11-25 2015-01-06 E Ink Corporation Electro-optic displays, and methods for driving same
US8969886B2 (en) 2002-04-24 2015-03-03 E Ink Corporation Electro-optic displays having backplanes comprising ring diodes
US9005494B2 (en) 2004-01-20 2015-04-14 E Ink Corporation Preparation of capsules
US9182646B2 (en) 2002-06-10 2015-11-10 E Ink Corporation Electro-optic displays, and processes for the production thereof

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7327511B2 (en) 2004-03-23 2008-02-05 E Ink Corporation Light modulators
US7193625B2 (en) 1999-04-30 2007-03-20 E Ink Corporation Methods for driving electro-optic displays, and apparatus for use therein
US7012600B2 (en) 1999-04-30 2006-03-14 E Ink Corporation Methods for driving bistable electro-optic displays, and apparatus for use therein
JP4568477B2 (en) 2001-04-02 2010-10-27 イー インク コーポレイション Electrophoretic media with improved image stability
US6580545B2 (en) 2001-04-19 2003-06-17 E Ink Corporation Electrochromic-nanoparticle displays
EP1393122B1 (en) * 2001-05-15 2018-03-28 E Ink Corporation Electrophoretic particles
US6982178B2 (en) 2002-06-10 2006-01-03 E Ink Corporation Components and methods for use in electro-optic displays
US6819471B2 (en) 2001-08-16 2004-11-16 E Ink Corporation Light modulation by frustration of total internal reflection
CN102789764B (en) 2001-11-20 2015-05-27 伊英克公司 Methods for driving bistable electro-optic displays
US6885032B2 (en) 2001-11-21 2005-04-26 Visible Tech-Knowledgy, Inc. Display assembly having flexible transistors on a flexible substrate
JP4651383B2 (en) 2002-06-13 2011-03-16 イー インク コーポレイション Method for driving electro-optic display device
EP3056941B1 (en) 2002-09-03 2019-01-09 E Ink Corporation Electro-phoretic medium
EP2273307B1 (en) 2003-03-27 2012-08-22 E Ink Corporation Electrophoretic medium for an electrophoretic display
WO2005006290A1 (en) 2003-06-30 2005-01-20 E Ink Corporation Methods for driving electro-optic displays
EP2698784B1 (en) 2003-08-19 2017-11-01 E Ink Corporation Electro-optic display
US7173752B2 (en) 2003-11-05 2007-02-06 E Ink Corporation Electro-optic displays, and materials for use therein
JP4790622B2 (en) 2003-11-26 2011-10-12 イー インク コーポレイション Low residual voltage electro-optic display
US11250794B2 (en) 2004-07-27 2022-02-15 E Ink Corporation Methods for driving electrophoretic displays using dielectrophoretic forces
JP5897472B2 (en) * 2009-12-22 2016-03-30 メルク パテント ゲーエムベーハー Electroluminescent functional surfactant

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5892244A (en) * 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
JPH04180237A (en) * 1990-11-15 1992-06-26 Seiko Epson Corp Thin film transistor and production method
TW226478B (en) * 1992-12-04 1994-07-11 Semiconductor Energy Res Co Ltd Semiconductor device and method for manufacturing the same
TW241377B (en) * 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
US5477073A (en) * 1993-08-20 1995-12-19 Casio Computer Co., Ltd. Thin film semiconductor device including a driver and a matrix circuit
JPH0792494A (en) * 1993-09-20 1995-04-07 Dainippon Printing Co Ltd Active matrix substrate and its production

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8969886B2 (en) 2002-04-24 2015-03-03 E Ink Corporation Electro-optic displays having backplanes comprising ring diodes
US9419024B2 (en) 2002-04-24 2016-08-16 E Ink Corporation Methods for forming patterned semiconductors
US9182646B2 (en) 2002-06-10 2015-11-10 E Ink Corporation Electro-optic displays, and processes for the production thereof
US8928562B2 (en) 2003-11-25 2015-01-06 E Ink Corporation Electro-optic displays, and methods for driving same
US9542895B2 (en) 2003-11-25 2017-01-10 E Ink Corporation Electro-optic displays, and methods for driving same
US9005494B2 (en) 2004-01-20 2015-04-14 E Ink Corporation Preparation of capsules

Also Published As

Publication number Publication date
EP1186047A1 (en) 2002-03-13
WO2000067327A1 (en) 2000-11-09
CA2372101A1 (en) 2000-11-09
JP2002543625A (en) 2002-12-17
AU4985500A (en) 2000-11-17

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