WO2001007690A1 - Growth of bulk single crystals of aluminum - Google Patents
Growth of bulk single crystals of aluminum Download PDFInfo
- Publication number
- WO2001007690A1 WO2001007690A1 PCT/US1999/016619 US9916619W WO0107690A1 WO 2001007690 A1 WO2001007690 A1 WO 2001007690A1 US 9916619 W US9916619 W US 9916619W WO 0107690 A1 WO0107690 A1 WO 0107690A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- melt
- ain
- nitrogen
- crystal
- crucible
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
Definitions
- the present invention enables the growth of bulk AIN crystals at commercial production rates, for example, growth rates greater than 0.5 mm per hour.
- the invention in its most basic form is a method for the isotropic growth of large diameter single crystalline AIN by contacting nitrogen with liquid aluminum (Al) at elevated temperatures to form AIN in the melt, while depositing the AIN so formed on a seed crystal.
- Al liquid aluminum
- the crucible is heated by an induction heating coil 140.
- the seed is fabricated from single crystalline SiC, Al 2 O 3 , W or AIN.
- Means for visual observation and control of the system is supplied by a view port 300.
- the resulting AIN single crystal is 11-15 mm in height and 2 inches in diameter.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE69940563T DE69940563D1 (en) | 1999-07-22 | 1999-07-22 | GROWTH OF ALUMINUM CRYSTALS |
CA002380145A CA2380145C (en) | 1999-07-22 | 1999-07-22 | Growth of bulk single crystals of aluminum |
KR1020027000920A KR100588424B1 (en) | 1997-10-06 | 1999-07-22 | Growth of bulk single crystals of aluminum nitride from a melt |
JP2001512954A JP4836377B2 (en) | 1999-07-22 | 1999-07-22 | Growth of aluminum nitride bulk single crystals from melts. |
EP99937395A EP1226291B1 (en) | 1997-10-06 | 1999-07-22 | Growth of bulk single crystals of aluminum |
AU52236/99A AU5223699A (en) | 1999-07-22 | 1999-07-22 | Growth of bulk single crystals of aluminum |
AT99937395T ATE425279T1 (en) | 1997-10-06 | 1999-07-22 | GROWTH OF ALUMINUM SINGLE CRYSTALS |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/944,393 US5954874A (en) | 1996-10-17 | 1997-10-06 | Growth of bulk single crystals of aluminum nitride from a melt |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001007690A1 true WO2001007690A1 (en) | 2001-02-01 |
Family
ID=25481314
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/016619 WO2001007690A1 (en) | 1997-10-06 | 1999-07-22 | Growth of bulk single crystals of aluminum |
Country Status (6)
Country | Link |
---|---|
US (2) | US5954874A (en) |
EP (1) | EP1226291B1 (en) |
KR (1) | KR100588424B1 (en) |
CN (1) | CN1174124C (en) |
AT (1) | ATE425279T1 (en) |
WO (1) | WO2001007690A1 (en) |
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JP2003527296A (en) * | 2000-03-13 | 2003-09-16 | アドバンスド.テクノロジー.マテリアルス.インコーポレイテッド | III-V nitride substrate bowl and method of making and using III-V nitride substrate bowl |
JP2006016252A (en) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | Nitride single crystal and its producing method |
EP1775356A2 (en) * | 2005-10-14 | 2007-04-18 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
US8932992B2 (en) | 2001-06-20 | 2015-01-13 | Nuevolution A/S | Templated molecules and methods for using such molecules |
US9096951B2 (en) | 2003-02-21 | 2015-08-04 | Nuevolution A/S | Method for producing second-generation library |
US9109248B2 (en) | 2002-10-30 | 2015-08-18 | Nuevolution A/S | Method for the synthesis of a bifunctional complex |
US9121110B2 (en) | 2002-12-19 | 2015-09-01 | Nuevolution A/S | Quasirandom structure and function guided synthesis methods |
US9574189B2 (en) | 2005-12-01 | 2017-02-21 | Nuevolution A/S | Enzymatic encoding methods for efficient synthesis of large libraries |
US10730906B2 (en) | 2002-08-01 | 2020-08-04 | Nuevolutions A/S | Multi-step synthesis of templated molecules |
US11118215B2 (en) | 2003-09-18 | 2021-09-14 | Nuevolution A/S | Method for obtaining structural information concerning an encoded molecule and method for selecting compounds |
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US6958093B2 (en) * | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
US6048813A (en) * | 1998-10-09 | 2000-04-11 | Cree, Inc. | Simulated diamond gemstones formed of aluminum nitride and aluminum nitride: silicon carbide alloys |
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AU2002235146A1 (en) | 2000-11-30 | 2002-06-11 | North Carolina State University | Non-thermionic sputter material transport device, methods of use, and materials produced thereby |
US6906352B2 (en) | 2001-01-16 | 2005-06-14 | Cree, Inc. | Group III nitride LED with undoped cladding layer and multiple quantum well |
US6800876B2 (en) | 2001-01-16 | 2004-10-05 | Cree, Inc. | Group III nitride LED with undoped cladding layer (5000.137) |
US6706114B2 (en) * | 2001-05-21 | 2004-03-16 | Cree, Inc. | Methods of fabricating silicon carbide crystals |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
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US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
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DE10335538A1 (en) * | 2003-07-31 | 2005-02-24 | Sicrystal Ag | Process and apparatus for AIN single crystal production with gas permeable crucible wall |
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JP4603498B2 (en) * | 2005-03-14 | 2010-12-22 | 株式会社リコー | Group III nitride crystal manufacturing method and manufacturing apparatus |
US8349077B2 (en) | 2005-11-28 | 2013-01-08 | Crystal Is, Inc. | Large aluminum nitride crystals with reduced defects and methods of making them |
WO2007065018A2 (en) | 2005-12-02 | 2007-06-07 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
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US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
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US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
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US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
CA2759530C (en) * | 2009-04-24 | 2015-01-20 | National Institute Of Advanced Industrial Science And Technology | Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal |
US20100314551A1 (en) * | 2009-06-11 | 2010-12-16 | Bettles Timothy J | In-line Fluid Treatment by UV Radiation |
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GB2001046A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Synthesis of aluminium nitride |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
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-
1997
- 1997-10-06 US US08/944,393 patent/US5954874A/en not_active Expired - Lifetime
-
1999
- 1999-07-22 EP EP99937395A patent/EP1226291B1/en not_active Expired - Lifetime
- 1999-07-22 CN CNB99816819XA patent/CN1174124C/en not_active Expired - Lifetime
- 1999-07-22 AT AT99937395T patent/ATE425279T1/en not_active IP Right Cessation
- 1999-07-22 WO PCT/US1999/016619 patent/WO2001007690A1/en active IP Right Grant
- 1999-07-22 KR KR1020027000920A patent/KR100588424B1/en not_active IP Right Cessation
- 1999-07-27 US US09/361,944 patent/US6066205A/en not_active Expired - Lifetime
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GB2001046A (en) * | 1977-07-14 | 1979-01-24 | Secr Defence | Synthesis of aluminium nitride |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003527296A (en) * | 2000-03-13 | 2003-09-16 | アドバンスド.テクノロジー.マテリアルス.インコーポレイテッド | III-V nitride substrate bowl and method of making and using III-V nitride substrate bowl |
US10669538B2 (en) | 2001-06-20 | 2020-06-02 | Nuevolution A/S | Templated molecules and methods for using such molecules |
US8932992B2 (en) | 2001-06-20 | 2015-01-13 | Nuevolution A/S | Templated molecules and methods for using such molecules |
US10730906B2 (en) | 2002-08-01 | 2020-08-04 | Nuevolutions A/S | Multi-step synthesis of templated molecules |
US9284600B2 (en) | 2002-10-30 | 2016-03-15 | Neuvolution A/S | Method for the synthesis of a bifunctional complex |
US10077440B2 (en) | 2002-10-30 | 2018-09-18 | Nuevolution A/S | Method for the synthesis of a bifunctional complex |
US9109248B2 (en) | 2002-10-30 | 2015-08-18 | Nuevolution A/S | Method for the synthesis of a bifunctional complex |
US9121110B2 (en) | 2002-12-19 | 2015-09-01 | Nuevolution A/S | Quasirandom structure and function guided synthesis methods |
US9096951B2 (en) | 2003-02-21 | 2015-08-04 | Nuevolution A/S | Method for producing second-generation library |
US11118215B2 (en) | 2003-09-18 | 2021-09-14 | Nuevolution A/S | Method for obtaining structural information concerning an encoded molecule and method for selecting compounds |
US11965209B2 (en) | 2003-09-18 | 2024-04-23 | Nuevolution A/S | Method for obtaining structural information concerning an encoded molecule and method for selecting compounds |
JP2006016252A (en) * | 2004-07-01 | 2006-01-19 | Sumitomo Electric Ind Ltd | Nitride single crystal and its producing method |
JP4608970B2 (en) * | 2004-07-01 | 2011-01-12 | 住友電気工業株式会社 | Method for producing nitride single crystal |
EP1775356A2 (en) * | 2005-10-14 | 2007-04-18 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
US9856575B2 (en) | 2005-10-14 | 2018-01-02 | Ricoh Company, Ltd. | Crystal growth apparatus and manufacturing method of group III nitride crystal |
US9574189B2 (en) | 2005-12-01 | 2017-02-21 | Nuevolution A/S | Enzymatic encoding methods for efficient synthesis of large libraries |
US11702652B2 (en) | 2005-12-01 | 2023-07-18 | Nuevolution A/S | Enzymatic encoding methods for efficient synthesis of large libraries |
Also Published As
Publication number | Publication date |
---|---|
CN1361834A (en) | 2002-07-31 |
EP1226291A4 (en) | 2007-05-02 |
US5954874A (en) | 1999-09-21 |
KR20020034163A (en) | 2002-05-08 |
EP1226291A1 (en) | 2002-07-31 |
EP1226291B1 (en) | 2009-03-11 |
ATE425279T1 (en) | 2009-03-15 |
US6066205A (en) | 2000-05-23 |
KR100588424B1 (en) | 2006-06-09 |
CN1174124C (en) | 2004-11-03 |
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