WO2001008240A9 - Organic electroluminescent device - Google Patents

Organic electroluminescent device

Info

Publication number
WO2001008240A9
WO2001008240A9 PCT/CA2000/000849 CA0000849W WO0108240A9 WO 2001008240 A9 WO2001008240 A9 WO 2001008240A9 CA 0000849 W CA0000849 W CA 0000849W WO 0108240 A9 WO0108240 A9 WO 0108240A9
Authority
WO
WIPO (PCT)
Prior art keywords
layer
elecfroluminescent
optical interference
interference member
anode
Prior art date
Application number
PCT/CA2000/000849
Other languages
French (fr)
Other versions
WO2001008240A1 (en
Inventor
Peter G Hofstra
Alexey Krasnov
Original Assignee
Luxell Technologies Inc
Peter G Hofstra
Alexey Krasnov
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Luxell Technologies Inc, Peter G Hofstra, Alexey Krasnov filed Critical Luxell Technologies Inc
Priority to EP00949029A priority Critical patent/EP1208611A1/en
Priority to AU62565/00A priority patent/AU6256500A/en
Priority to JP2001512652A priority patent/JP2003505849A/en
Priority to CA002378442A priority patent/CA2378442A1/en
Publication of WO2001008240A1 publication Critical patent/WO2001008240A1/en
Publication of WO2001008240A9 publication Critical patent/WO2001008240A9/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/8791Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/86Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/12Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00Stock material or miscellaneous articles
    • Y10S428/917Electroluminescent

Definitions

  • the present invention relates generally electroluminescent devices and more specifically relates to an organic electroluminescent device having a thin film optical interference layer to reduce reflectance from ambient light.
  • Electroluminescent devices are well known and are generally constructed of several layers of different materials. These layers typically consist of a transparent front-electrode layer, an elecfroluminescent layer and a back- electrode layer. When a voltage is applied across the electrodes, the elecfroluminescent layer becomes active, converting some portion of the electrical energy passing therethrough into light. This light is then emitted out through the front-electrode, which is transparent to the emitted fight, where it is visible to a user of the device.
  • Elecfroluminescent devices can be particularly useful as computer displays and are generally recognized as high-quality displays for computers and other electronic devices used in demanding applications such as military, avionics and aerospace where features such as high reliability, low weight, and low power consumption are important.
  • Electroluminescent displays are also gaining recognition for their qualities in automotive, personal computer and other consumer industries, as they can offer certain benefits over other displays such as cathode-ray tubes (“CRT”) and liquid crystal displays (“LCD”).
  • CTR cathode-ray tubes
  • LCD liquid crystal displays
  • One feature of electroluminescent displays is the ability to add thin films between the layers to vary the characteristics of the display. It is known to use thin film layers in electroluminescent displays to improve selected display characteristics, such as signal-to-reflected-ambient light ratio (“SRA”) and contrast ratio (“CR”). For greater clarity, signal-to-reflected ambient light ratio can be defined as: SR ⁇ -
  • L em Emitted luminance of the device
  • R Reflectance of the device
  • L amb The ambient ifiuminance, or the ambient light incident on the display
  • contrast ratio in a pixilated device, can be defined as:
  • L off Emitted luminance of inactive or "off" pixels
  • L amb The ambient illuminance, or the ambient light incident on the display.
  • One particular type of thin-film layer that can be used to improve contrast ratio in electroluminescent devices is a substantially transparent optical interference layer placed between one or more of the layers of the electroluminescent device, as taught in United States patent 5,049,780 [Dobrowolski].
  • improvements to the contrast ratio of an electroluminescent device is generally desirable and particularly important in avionics and rmlitary applications where poor contrast and glare can have serious consequences.
  • the optical interference layer can result in the reduction of the amplitude of ambient light by superimposing of two or more, out-of-phase, electromagnetic waves, which can be generated by reflection and/or transmission at the interfaces of thin-film layer(s).
  • optical destructive interference at the electromagnetic wavelengths of interest typically visible ambient light waves reflected off of the display
  • an exceptional contrast ratio- and/or signal-to-reflected ambient light ratio can result in an exceptional contrast ratio- and/or signal-to-reflected ambient light ratio.
  • Dobrowolski is generally directed to voltage-driven inorganic elecfroluminescent devices, where the elecfroluminescent layer is formed of an inorganic material, and which typically require one or more additional transparent dielectric layers to reduce electrical-breakdown of the inorganic elecfroluminescent layer.
  • Such inorganic elecfroluminescent devices are typically voltage-driven, powered with alternating current (“ac”) in order to reduce charge build-up within the device.
  • alternating current alternating current
  • Dobrowolski does generally contemplate the use of direct current (“dc”) electroluminescent devices without transparent dielectric layers, such inorganic devices are still voltage-driven, and are generally prone to electrical breakdown of the electroluminescent layer.
  • an optical interference electroluminescent device for displaying an image to a viewer in front of the device, comprising: an anode layer; a cathode layer, at least one of the anode layer and the cathode layer being substantially transparent to at least a portion of emitted elecfroluminescent light; at least one organic elecfroluminescent layer disposed between the anode layer and the cathode layer, the electroluminescent layer having a first energy characteristic being the amount of energy required to extract an electron from a highest occupied molecular orbital of the elecfroluminescent layer, and a second energy characteristic being the amount of energy required to extract an electron from a lowest unoccupied molecular orbital of the elecfroluminescent layer;
  • an elecfroluminescent device to emit light in a selected spectrum, comprising: an anode layer, a cathode layer, wherien one of the anode layer and the cathode layer are substantially transparent to at least a portion of the selected spectrum emitted by the electroluminescent device.
  • the electroluminescent device further comprises an organic electroluminescent layer between the anode layer and the cathode layer, the electroluminescent layer having a highest occupied molecular orbital respective to the anode layer and having a lowest unoccupied molecular orbital respective to the cathode layer.
  • the device further includes an optical interference member having a selected work function and operable to reduce ambient light reflected through the transparent layer, the optical interference member being between the electroluminescent layer and one of the anode layer and the cathode layer, wherein the difference between the selected work function and an energy level required to extract an electron from a respective molecular orbital approaches zero.
  • a method of fabricating an elecfroluminescent device for displaying an image to a viewer in front of the device comprising the steps of: depositing an anode layer onto a substrate; depositing an organic elecfroluminescent layer onto the anode layer, the elecfroluminescent layer having a first energy characteristic associated with an anode side, and a second energy characteristic associated with a cathode side; depositing an optical interference member onto the elecfroluminescent layer, the optical interference member for reducing the reflectance of ambient light towards the viewer, the optical interference member having a work function substantially equal to the second energy characteristic; depositing a cathode layer onto the optical interference member; and sealing the device.
  • a method of assembling an elecfroluminescent device for displaying an image to a viewer in front of the device comprising the steps of: depositing an anode layer onto a substrate; depositing an optical interference member onto the anode layer; the optical interference member for reducing the reflectance of ambient light towards the viewer, the optical interference member having a work function; depositing an organic elecfroluminescent layer onto the interference member, the elecfroluminescent layer having an energy characteristic being the amount of energy required to extract an electron from the electroluminescent layer, the energy characteristic being substantially equal to the work function; depositing a cathode layer onto the electroluminescent layer; and sealing the device.
  • a method of displaying an image to a viewer comprising the steps of: emitting light from an organic elecfroluminescent layer between an anode and a cathode, said elecfroluminescent layer having a first energy characteristic respective to said anode and a second energy characteristic respective to said cathode; receiving ambient light incident towards said elecfroluminescent layer; and forming destructive interference from said ambient light at the incident surface of an optical interference member, said optical interference member having a selected work function and disposed between said elecfroluminescent layer and one of said anode and said cathode, the difference between said work function and a respective energy characteristic approaching zero.
  • the appropriate selection of material of the at least one optical interference member ensures proper current flow through the device, thus reducing the likelihood of electrical breakdown of the organic elecfroluminescent layer, and improving the overall energy efficiency of the device, while still reducing reflectance towards a viewer.
  • Figure 1 is a schematic diagram of a cross-section of through a portion of an optical interference organic elecfroluminescent device in accordance with a first embodiment of the invention.
  • Figure 2 is a schematic diagram of a cross-section of through a portion of an optical interference organic elecfroluminescent display in accordance with a second embodiment of the invention.
  • Device 10 comprises an electroluminescent transmitting anode 12, an electroluminescent layer 14 disposed behind anode 12, an optical interference member 16 disposed bebind the elecfroluminescent layer 14 and a cathode 18 disposed behind the interference member 16.
  • Device 10 is connected to a current source 20 via anode 12 and cathode 18 in order to drive a constant current through device 10.
  • Elecfroluminescent transmitting anode 12 is any conducting material which is transparent to at least aportion of emitted elecfroluminescent light, such as indium tin oxide (ITO) or zinc oxide (ZnO).
  • anode 12 is a layer of indium tin oxide preferably having a thickness of about fifteen- hundred angstroms (1500A).
  • elecfroluminescent transmitting anode 12 can have different thicknesses, and can be in the range of, for example, from about one-thousand angstroms (lOOO ⁇ ) to about three-thousand angstroms (3000A), or from about twelve-hundred angstroms (1200A) to about two-thousand angstroms (2000A).
  • Elecfroluminescent layer 14 is an organic elecfroluminescent material such as tris(8-quinolinolato aluminum) (Alq3) or poly(n-vinyl carbozale) (PVC wherein photons of light are emitted when electrons drop from a lowest unoccupied molecular orbital ("lumo") of layer 14, where they combine with holes in the highest occupied molecular orbital ("homo") of layer 14. Accordingly, a current flow through electroluminescent layer 14 can produce an emission of light.
  • Alq3 tris(8-quinolinolato aluminum)
  • PVC poly(n-vinyl carbozale)
  • layer 14 is preferably made from tris(8-quinolinolato aluminum), preferably having a thickness of about one- thousand angstroms (1000A), although those of skill in the art will be able to select other appropriate thicknesses of this layer.
  • the energy required to extract an electron from the highest occupied molecular orbital, E H0M0 is about 5.4 electron-volts, which can also be described as the energy required to extract an electron from the surface of layer 14, or, the work function of layer 14.
  • the energy required to extract an electron from the lowest unoccupied molecular orbital of tris(8-quinolinolato aluminum) is about 3.0 electron-volts, which can be referred to as E LUM0 .
  • E H0M0 and E LUM0 of tris(8-quinolinolato aluminum) is about 2.4 electron-volts.
  • other organic materials can be so chosen (i.e. by selection of material or modification of material with dopants) so that the difference between E HOMO and E LUMC - is m me range from about ⁇ .5 electron-volts to about 3.0 electron-volts, which covers the spectrum of visible light.
  • optical interference member 16 comprises a semi-absorbent layer 16a and a transparent layer 16b.
  • Semi-absorbent layer 16a is partially reflective, partially absorbing and partially transmissive of light in the visible spectrum, and in a present embodiment, is made from magnesium silver (Mg: Ag) having a thickness of about one-hundred-and-eighty-five angstroms (185A).
  • Mg magnesium silver
  • 185A a thickness of about one-hundred-and-eighty-five angstroms
  • suitable materials can include InconelTM, Nickel (Ni), Titanium, or a suitable organic material and appropriate thicknesses of such layers can be determined by those of skill in the art.
  • the extinction coefficient of the material and its thickness should be selected so that the reflection from layer 16a at a preselected wavelength, neglecting optical interference, should preferably be at least about thirty-five percent, with the remainder of light energy being, fransmitted or absorbed, and dissipated in the form of heat. Similarly, transmission through layer 16a at a preselected wavelength, neglecting optical interference, will preferably be at least about thirty-five percent.
  • the extinction coefficient of layer 16a and its thickness can be selected so that the transmission through layer 16a at a preselected wavelength, neglecting optical interference, can be from about thirty percent to about forty percent.
  • the amount of light transmitted through layer 16a, after two passes, should be substantially equal to the amount of light that is originally reflected from layer 16a, in order to achieve the appropriate destructive interference at the reflective surface of layer 16a, as will be understood by those of skill in the art.
  • Substantially transparent conducting layer 16b is made from indium tin oxide (ITO) and has a thickness of about eight-hundred-and- forty angstroms (840 A). Other suitable materials and layer thicknesses can be used as will occur to those of skill in the art, such as zinc oxide (ZnO).
  • the extinction coefficient of the material of layer 16b and its thickness is selected so that the transmission through layer 16b at a preselected wavelength, neglecting optical interference, is greater than about eighty percent, but is preferably at least about ninety percent.
  • the preselected wavelength(s) for layer 16b should be substantially equal to the preselected wavelengths used to choose layer 16a.
  • a wavelength of about five-hundred-and-fifty nanometers (550nm), the . cenfre of the spectrum of visible light, is a presently preferred preselected wavelength used for the purpose of determining appropriate thicknesses and materials of layers 12 and 14 and member 16, as the resulting device 10 can have the desired optical interference characteristics across the visible light spectrum.
  • an incidental benefit to the selection of this wavelength can result in a device which reflects electromagnetic energy outside the visible spectrum, including infra-red, thus reducing the heating of the display.
  • other wavelengths can be selected, as desired.
  • Optical interference member 16 is also quantifiable in terms of its work function ⁇ orM. or the amount of energy required to exfract an electron from the surface of member 16.
  • positive-charges or holes flow from current source 20 through anode 12 and into elecfroluminescent layer 14, where they combine with electrons which flow from current source 20 through cathode 18, optical interference member 16 and into elecfroluminescent layer 14.
  • the materials chosen for member 16 are such that the difference X between E LUM0 and ⁇ 0 ⁇ M , expressed as an absolute value, approaches zero. This expression can be expressed mathematically as:
  • the X can be in the range of from about 0.0 to about 1.5 electron-volts (eV). It is believed that the difference X can be in the range of from about 0.1 to about 1.3 electron-volts. More preferably, it is believed that the difference X should be in the range of from about 0.6 to about 1.0 electron-volts.
  • the overall work function ⁇ OIM of member 16 is about 3.6 electron-volts. As E LUMO is about 3.0 electron-volts, the difference X is about 0.6 electron-volts.
  • Cathode 18 is magnesium silver having a thickness of about five-hundred angstroms (50 ⁇ ), and in the present embodiment is reflective. In other embodiments, it is believed that cathode 18 can have a thickness between about two-hundred-and-fifty angstroms (250A) to about two-thousand-angstroms (2000A). However, it will occur to those of skill in the art that other suitable conducting materials and thicknesses can be used.
  • member 16 can be determined with an operation that considers, at least in part, the thicknesses of and/or materials of anode 12, elecfroluminescent layer 14, and cathode 18.
  • Device 10 can be fabricated using techniques known in the art.
  • anode 12 is vacuum-deposited onto a glass substrate, and the subsequent layers are formed thereon also using vacuum deposition.
  • the entire device 10 is then sealed using techniques known in the art.
  • Other suitable substrates and means of fabricating device 10 will occur to those of skill in the art.
  • the substrate can be plastic.
  • elecfroluminescent layer 14 is poly(n- vinyl carbozale)
  • spin-coating can be an appropriate fabrication technique for layer 14.
  • ambient light is incident upon device 10, as indicated by arrow L amb and passes through anode 12 and elecfroluminescent layer 14.
  • Ambient light ⁇ incident upon semi-absorbing layer 16a is partially reflected, partially absorbed and partially transmitted.
  • the light fransmitted through semi- absorbing layer 16a passes through transparent layer 16b, where it reflects off cathode 18 and back through transparent layer 16b, at which point this reflected light is inverted one-hundred-and-eighty degrees out of phase with the partially reflected light from layer 16a, and thus these two reflections destructively interfere and substantially cancel each other out.
  • reflected light (L ref ) back towards the viewer from device 10 is reduced.
  • reflected light (L ref ) is reduced by about ninety percent, compared to an electroluminescent device assembled without optical interference member 16.
  • reflected light can be reduced by as much as about 99.5 percent by choosing different materials, thicknesses and extinction coefficients for optical interference member 16 and by selected appropriate thicknesses and materials for the other layers in device 10, although still within the aforementioned acceptable parameters and ranges such that the difference between E LUM0 and ⁇ 0IM , expressed as an absolute value, approaches zero.
  • a suitably modified optical interference member 16 can be disposed in series with other layers of device 10.
  • Device 10a comprises a elecfroluminescent fransmitting anode 12, an optical interference member 16 1 disposed behind anode 12, an elecfroluminescent layer 14 disposed behind interference member 16', and a cathode 18 disposed behind elecfroluminescent layer 14.
  • Device 10a is connected to a current source 20 via anode 12 and cathode 18 in ' order to drive a constant current through device 10 and layer 14.
  • Elecfroluminescent fransmitting anode 12 is any conducting material which is transparent to at least aportion of emitted elecfroluminescent light, such as indium fin oxide (ITO) or zinc oxide (ZnO).
  • anode 12 is a layer of indium tin oxide preferably having a thickness of about fifteen- hundred angsfroms (1500A).
  • elecfroluminescent fransmitting anode 12 can have different thicknesses, and can be in the range of, for example, from about one-thousand angsfroms (1000A) to about three-thousand angsfroms (3000A), or from about twelve-hundred angstroms (1200A) to about two-thousand angsfroms (2000A).
  • Elecfroluminescent layer 14 is an organic elecfroluminescent material such as tris(8-quinolinolato aluminum) (Alq3) or poly(n-vinyl carbozale) (PVCJ wherein photons of light are emitted when electrons drop from a lowest unoccupied molecular orbital ("lumo") of layer 14, where they combine with holes in the highest occupied molecular orbital ("homo") of layer 14. Accordingly, a current flow through electroluminescent layer 14 can produce an emission of light.
  • Alq3 tris(8-quinolinolato aluminum)
  • PVCJ poly(n-vinyl carbozale)
  • layer 14 is preferably made from tris(8-quinolinolato aluminum), preferably having a thickness of about one- thousand angsfroms (lOOOA), although those of skill in the art will be able to select other appropriate thicknesses of this layer.
  • lOOOA angsfroms
  • the energy required to exfract an electron from the highest occupied molecular orbital, E H0M0 is about 5.4 electron-volts, which can also be described as the energy required to exfract an electron from the surface of layer 14, or, the work function of layer 14.
  • the energy required to exfract an electron from the lowest unoccupied molecular orbital of tris(8-quinolinolato aluminum) is about 3.0 electron-volts, which can be referred to as E LUM0 .
  • E LUM0 the difference between ⁇ HOMO ar ⁇ i E LUM0 of tris(8-quinolinolato aluminum) is about 2.4 electron-volts.
  • other organic materials can be so chosen (i.e. by selection of material or modification of material with dopants) so that the difference between E JJOMO and E LUM0 is in the range from about 1.5 electron-volts to about 3.0 electron-volts, which covers the spectrum of visible light.
  • optical interference member 16' comprises a substantially transparent conducting layer 16c made from indium tin oxide ( ⁇ TO) andhaving athickness of about seven-hundred-and-forty-five angsfroms (745A).
  • ⁇ TO indium tin oxide
  • Other suitable materials can be used as will occur to those of skill in the art, such . as zinc oxide (ZnO) or a suitable organic material.
  • the indium tin oxide of layer 16c is modified (by controlling its stoichiometry) so that it behaves as a quarter- wave-stack at a light wavelength of five-hundred-and-fifty nanometers (550 nm), and chosen so that the transmission through layer 16c is greater than about eighty percent, and preferably at least about ninety percent.
  • other wavelengths can be selected, as desired.
  • optical interference member 16' is also measurable in terms of work function ⁇ 0IM - I 1 a present embodiment, holes flow from current source 20 through anode 12 and optical interference member 16', and into elecfroluminescent layer 14, where they combine with electrons which flow from current source 20 through cathode 18 and into electroluminescent layer 14.
  • the materials chosen for member 16' are such that the difference Y between E H0M0 and ⁇ 0IM , expressed as an absolute value, approaches zero. This expression can be expressed mathematically as:
  • the difference Y can be in the range of from about 0.0 to about 1.5 elecfron-volts (eN). It is believed that the difference Y can be in the range of from about 0.1 to about 1.3 elecfron-volts. More preferably, it is believed that the difference Y should be in the range of from about 0.4 to about 1.0 elecfron-volts.
  • the overall work function ⁇ OM of member 16 is about 5.0 elecfron-volts. Since E JJOMO is about 5.4 elecfron-volts, the difference Y is about 0.4 elecfron-volts (eN).
  • Cathode 18 is magnesium silver having a thickness of about five-hundred angsfroms (500A), and in the present embodiment is reflective. In other embodiments, it is believed that cathode 18 can have a thickness between about two-hundred-and-fifty angstroms (250 A) to about two-thousand-angsfroms (200 ⁇ A). However, it will occur to those of skill in the art that other suitable conducting materials and thicknesses can be used.
  • member 16' can be determined with an operation that considers, at least in part, the thicknesses of and/or materials of anode 12, elecfroluminescent layer 14, and cathode 18.
  • Device 10a can be fabricated using techniques known in the art.
  • anode 12 is vacuum-deposited onto a glass substrate, and the subsequent layers are formed thereon also using vacuum deposition.
  • the entire device 10a is then sealed using techniques known in the art.
  • Other suitable substrates and means of fabricating device 10a will occur to those of skill in the art.
  • the substrate can be plastic.
  • electroluminescent layer 14 is poly(n- vinyl carbozale)
  • spin-coating can be an appropriate fabrication technique for layer 14.
  • the recombination of electrons and holes in layer 14 causes light to be emitted out through the front face of anode 12 and towards a viewer, as indicated by arrow L em .
  • ambient light is incident upon device 10a as indicated by arrow L ⁇ and passes through anode 12 and is incident upon transparent layer 16c.
  • About half of ambient Hght L ⁇ ,, incident upon layer 16c is reflected, while the remainder is fransmitted.
  • the hght transmitted through layer 16c reflects off the surface of elecfroluminescent layer 14 and back through layer 16c.
  • reflected light (L ref ) back towards the viewer from device 10 is reduced.
  • reflected light (L ref ) is believed to be reduced by arange of from about 0.5 percent to about two percent, compared to electroluminescent devices without layer 16'.
  • each optical interference member can be a transparent layer or a combination of a transparent layer and a semi-absorbing layer in order to achieve different results, and it will be apparent that these different types of optical interference members can also be placed at different locations throughout the device.
  • a transparent layer, without a semi-absorbing layer can be used between the organic elecfroluminescent layer and the cathode, and similarly, a combination of a transparent layer and a semi- absorbing layer can be used between the anode and the elecfroluminescent layer, by having the difference between work function of the optical interference member and the energy required to exfract an electron from either highest occupied molecular orbital, and/or the lowest unoccupied molecular orbital, approach zero, as appropriate.
  • the present invention can be suitable for a computer display.
  • a pixilated organic elecfroluminescent computer display can be formed where the anode comprises a plurality of generally parallel and spaced anodes to compose the front layer of an organic electroluminescent computer display, and the cathode comprises a number of spaced cathodes which are generally perpendicular to the anodes.
  • the anode and the cathode can be patterned in a variety of ways, other than pixilated, to create different recognizable patterns to a user of device 10.
  • the device can also be hybrid-display having an active matrix, as can be found in notebook computers.
  • the present invention can be suitably modified for use in colour organic electroluminescent devices.
  • multi-colour and full-colour devices can be formed from stacked transparent organic electroluminescent layers.
  • the optical interference member is between two of these stacked layers, it will be apparent that the difference between its work function and the energy level required to exfract an electron from the lowest unoccupied molecular orbital of the elecfroluminescent layer nearest the anode should approach zero, and the difference between the work function and the energy level required to exfract an elecfron from the highest occupied molecular orbital of the elecfroluminescent layer nearest the cathode should also approach zero.
  • the work function of the optical interference member should be the average of the lowest unoccupied molecular orbitals of the surrounding elecfroluminescent layers.
  • Multi-coloured and full-coloured devices can also be provided through a patterned red-green-blue organic layer (i.e. by selecting materials having inherent colour properties, or by appropriately doping the patterns on the layer).
  • Other colourizing techniques can including the use of a white-emitter and appropriate filters. It will be apparent that the teachings of the present invention can be modified to accommodate these and other colour devices.
  • the present invention can also be used as a backlight for a liquid crystal display. It will also be understood that the present invention can be suitably modified for organic elecfroluminescent devices which have an electron fransport layer between the cathode and the electroluminescent layer, and/or a hole transport layer between the anode and the elecfroluminescent layer.
  • the optical interference member can thus be placed between the transport layer and the electroluminescent layer, or the fransport layer can be placed between the elecfroluminescent layer and the optical interference member.
  • the optical interference member is still selected to have a work function such that the difference between the work function and the energy levels associated with the respective anode side and/or cathode side of the electroluminescent layer(s) approach zero, in order to facilitate current flow through the entire device. It is also contemplated that an appropriate transport layer can be incorporated into an optical interference member.
  • the embodiments herein refer to a front anode and a rear cathode
  • the present invention can be suitable to a device having a front cathode and a rear anode, as long as at least the front layer is transparent to at least a portion of emitted elecfroluminescent light.
  • the present invention provides a novel organic elecfroluminescent device having an optical interference member which reduces the overall reflectance from the device.
  • the optical interference member is selected to have a thickness which causes at least some destructive optical interference of ambient hght incident on the display.
  • the materials) of the optical interference member are chosen to have a work function such that the difference between the work function and the energy level required to exfract an elecfron from the highest occupied molecular orbital, or the lowest unoccupied molecular orbital of the elecfroluminescent layer approaches zero, depending on the direction of current flow and location of the optical interference member in relation to the elecfroluminescent layer.
  • optical interference member improves proper current flow through the device, thus reducing the likelihood of electrical breakdown of the organic elecfroluminescent layer and improving the overall energy efficiency of the device.
  • a semi-absorbent layer and transparent layer are combined to form the optical interference member, then placement of such an optical interference member in contact with the electrode at the back of the device can actually increase the reflectance of infra-red ambient signatures, compared to absorbing films, thus reducing the heating of the display and reducing the likelihood of damage to the electroluminescent layer.

Abstract

The present invention provides a novel organic electroluminescent device having an optical interference member which reduces the overall reflectance from the device. The invention is particularly suited to current-driven organic displays having an anode, an electroluminescent layer and a cathode, where at least one optical interference member is placed between two of the layers and thus forms part of the electrical circuit required to excite the display. The optical interference member is chosen to have a thickness which causes at least some destructive optical interference of ambient light incident on the display. In addition, the material(s) of the optical interference member are chosen to have a work function which is compatible with the highest occupied molecular orbital, or the lowest unoccupied molecular orbital of the electroluminescent layer, depending on the location of the optical interference member in relation to the anode, cathode and electroluminescent layer. The appropriate selection of material can ensure proper current flow through the device, thus reducing the likelihood of electrical breakdown of the organic electroluminescent layer, and improving the overall energy efficiency of the device.

Description

ORGANIC ELECTROLUMINESCENT DEVICE
TECHNICAL FIELD
The present invention relates generally electroluminescent devices and more specifically relates to an organic electroluminescent device having a thin film optical interference layer to reduce reflectance from ambient light.
BACKGROUND ART
Electroluminescent devices (ELDs) are well known and are generally constructed of several layers of different materials. These layers typically consist of a transparent front-electrode layer, an elecfroluminescent layer and a back- electrode layer. When a voltage is applied across the electrodes, the elecfroluminescent layer becomes active, converting some portion of the electrical energy passing therethrough into light. This light is then emitted out through the front-electrode, which is transparent to the emitted fight, where it is visible to a user of the device.
Elecfroluminescent devices can be particularly useful as computer displays and are generally recognized as high-quality displays for computers and other electronic devices used in demanding applications such as military, avionics and aerospace where features such as high reliability, low weight, and low power consumption are important. Electroluminescent displays are also gaining recognition for their qualities in automotive, personal computer and other consumer industries, as they can offer certain benefits over other displays such as cathode-ray tubes ("CRT") and liquid crystal displays ("LCD"). One feature of electroluminescent displays is the ability to add thin films between the layers to vary the characteristics of the display. It is known to use thin film layers in electroluminescent displays to improve selected display characteristics, such as signal-to-reflected-ambient light ratio ("SRA") and contrast ratio ("CR"). For greater clarity, signal-to-reflected ambient light ratio can be defined as: SRΛ-
RxL amb
where:
SEA = Signal-to-reflected ambient light ratio,
Lem = Emitted luminance of the device, R = Reflectance of the device, and
Lamb = The ambient ifiuminance, or the ambient light incident on the display,
and, in a pixilated device, contrast ratio can be defined as:
/τp_ L on +RxL amb ,
Lojf+RxLa,nb
where: CR = Contrast Ratio,
Lon = Emitted luminance of active or "on" pixels,
Loff= Emitted luminance of inactive or "off" pixels,
R = Reflectance of the device, and
Lamb = The ambient illuminance, or the ambient light incident on the display.
One particular type of thin-film layer that can be used to improve contrast ratio in electroluminescent devices is a substantially transparent optical interference layer placed between one or more of the layers of the electroluminescent device, as taught in United States patent 5,049,780 [Dobrowolski]. As will be apparent to those of skill in the art, improvements to the contrast ratio of an electroluminescent device is generally desirable and particularly important in avionics and rmlitary applications where poor contrast and glare can have serious consequences. Using the principle of destructive interference, the optical interference layer can result in the reduction of the amplitude of ambient light by superimposing of two or more, out-of-phase, electromagnetic waves, which can be generated by reflection and/or transmission at the interfaces of thin-film layer(s). By selecting appropriate thicknesses of the layers, optical destructive interference at the electromagnetic wavelengths of interest (typically visible ambient light waves reflected off of the display) can result in an exceptional contrast ratio- and/or signal-to-reflected ambient light ratio.
Dobrowolski is generally directed to voltage-driven inorganic elecfroluminescent devices, where the elecfroluminescent layer is formed of an inorganic material, and which typically require one or more additional transparent dielectric layers to reduce electrical-breakdown of the inorganic elecfroluminescent layer. Such inorganic elecfroluminescent devices are typically voltage-driven, powered with alternating current ("ac") in order to reduce charge build-up within the device. While Dobrowolski does generally contemplate the use of direct current ("dc") electroluminescent devices without transparent dielectric layers, such inorganic devices are still voltage-driven, and are generally prone to electrical breakdown of the electroluminescent layer.
With the advent of modern current-driven organic electroluminescent devices which offer certain advantages (such as colour improvements and a reduced barrier to current flow to reduce the necessary drive voltage) compared to voltage-driven inorganic elecfroluminescent devices, there is now a need to improve the contrast ratio and/or signal to ambient light ratio of these organic devices, and it can be seen that the prior art does not teach a suitable optical interference electroluminescent device to address this need.
DISCLOSURE OF THE INVENTION It is therefore an obj ect of the present invention to provide a novel organic electroluminescent device which obviates or mitigates at least one of the disadvantages of the prior art. In an embodiment of the invention there is provided an optical interference electroluminescent device for displaying an image to a viewer in front of the device, comprising: an anode layer; a cathode layer, at least one of the anode layer and the cathode layer being substantially transparent to at least a portion of emitted elecfroluminescent light; at least one organic elecfroluminescent layer disposed between the anode layer and the cathode layer, the electroluminescent layer having a first energy characteristic being the amount of energy required to extract an electron from a highest occupied molecular orbital of the elecfroluminescent layer, and a second energy characteristic being the amount of energy required to extract an electron from a lowest unoccupied molecular orbital of the elecfroluminescent layer; and at least one optical interference member disposed between two of the layers, and having a work function substantially equal to the first energy characteristic when the optical interference member is between the anode and the elecfroluminescent layer, and having a work function substantially equal to the second energy characteristic when the optical interference member is between the cathode and the electroluminescent layer, the optical interference member being of a thickness and material such that the spectral reflectance of the elecfroluminescent device is so modified that the reflectance of ambient light by the electroluminescent device towards the viewer is reduced.
In another embodiment of the invention, there is provided an elecfroluminescent device to emit light in a selected spectrum, comprising: an anode layer, a cathode layer, wherien one of the anode layer and the cathode layer are substantially transparent to at least a portion of the selected spectrum emitted by the electroluminescent device. The electroluminescent device further comprises an organic electroluminescent layer between the anode layer and the cathode layer, the electroluminescent layer having a highest occupied molecular orbital respective to the anode layer and having a lowest unoccupied molecular orbital respective to the cathode layer. The device further includes an optical interference member having a selected work function and operable to reduce ambient light reflected through the transparent layer, the optical interference member being between the electroluminescent layer and one of the anode layer and the cathode layer, wherein the difference between the selected work function and an energy level required to extract an electron from a respective molecular orbital approaches zero.
In another embodiment of the invention, there is provided a method of fabricating an elecfroluminescent device for displaying an image to a viewer in front of the device, comprising the steps of: depositing an anode layer onto a substrate; depositing an organic elecfroluminescent layer onto the anode layer, the elecfroluminescent layer having a first energy characteristic associated with an anode side, and a second energy characteristic associated with a cathode side; depositing an optical interference member onto the elecfroluminescent layer, the optical interference member for reducing the reflectance of ambient light towards the viewer, the optical interference member having a work function substantially equal to the second energy characteristic; depositing a cathode layer onto the optical interference member; and sealing the device.
In another embodiment of the invention there is provided a method of assembling an elecfroluminescent device for displaying an image to a viewer in front of the device, comprising the steps of: depositing an anode layer onto a substrate; depositing an optical interference member onto the anode layer; the optical interference member for reducing the reflectance of ambient light towards the viewer, the optical interference member having a work function; depositing an organic elecfroluminescent layer onto the interference member, the elecfroluminescent layer having an energy characteristic being the amount of energy required to extract an electron from the electroluminescent layer, the energy characteristic being substantially equal to the work function; depositing a cathode layer onto the electroluminescent layer; and sealing the device. In another embodiment of the invention, there is provided a method of displaying an image to a viewer comprising the steps of: emitting light from an organic elecfroluminescent layer between an anode and a cathode, said elecfroluminescent layer having a first energy characteristic respective to said anode and a second energy characteristic respective to said cathode; receiving ambient light incident towards said elecfroluminescent layer; and forming destructive interference from said ambient light at the incident surface of an optical interference member, said optical interference member having a selected work function and disposed between said elecfroluminescent layer and one of said anode and said cathode, the difference between said work function and a respective energy characteristic approaching zero.
The appropriate selection of material of the at least one optical interference member ensures proper current flow through the device, thus reducing the likelihood of electrical breakdown of the organic elecfroluminescent layer, and improving the overall energy efficiency of the device, while still reducing reflectance towards a viewer.
BRIEF DESCRIPTION OF THE DRAWINGS
Embodiments of the present invention will be described with reference to the accompanying drawings, in which:
Figure 1 is a schematic diagram of a cross-section of through a portion of an optical interference organic elecfroluminescent device in accordance with a first embodiment of the invention; and
Figure 2 is a schematic diagram of a cross-section of through a portion of an optical interference organic elecfroluminescent display in accordance with a second embodiment of the invention.
BEST MODE FOR CARRYING OUT THE INVENTION
Referring now to Figure 1, an electroluminescent device in accordance with a first embodiment of the invention is indicated generally at 10. Device 10 comprises an electroluminescent transmitting anode 12, an electroluminescent layer 14 disposed behind anode 12, an optical interference member 16 disposed bebind the elecfroluminescent layer 14 and a cathode 18 disposed behind the interference member 16. Device 10 is connected to a current source 20 via anode 12 and cathode 18 in order to drive a constant current through device 10.
Elecfroluminescent transmitting anode 12 is any conducting material which is transparent to at least aportion of emitted elecfroluminescent light, such as indium tin oxide (ITO) or zinc oxide (ZnO). In a present embodiment, anode 12 is a layer of indium tin oxide preferably having a thickness of about fifteen- hundred angstroms (1500A).
It is to be understood that elecfroluminescent transmitting anode 12 can have different thicknesses, and can be in the range of, for example, from about one-thousand angstroms (lOOOΛ) to about three-thousand angstroms (3000A), or from about twelve-hundred angstroms (1200A) to about two-thousand angstroms (2000A).
Elecfroluminescent layer 14 is an organic elecfroluminescent material such as tris(8-quinolinolato aluminum) (Alq3) or poly(n-vinyl carbozale) (PVC wherein photons of light are emitted when electrons drop from a lowest unoccupied molecular orbital ("lumo") of layer 14, where they combine with holes in the highest occupied molecular orbital ("homo") of layer 14. Accordingly, a current flow through electroluminescent layer 14 can produce an emission of light. In a present embodiment, layer 14 is preferably made from tris(8-quinolinolato aluminum), preferably having a thickness of about one- thousand angstroms (1000A), although those of skill in the art will be able to select other appropriate thicknesses of this layer. As is known to those familiar with the electrical properties of tris(8-quinolinolato aluminum), the energy required to extract an electron from the highest occupied molecular orbital, EH0M0, is about 5.4 electron-volts, which can also be described as the energy required to extract an electron from the surface of layer 14, or, the work function of layer 14. Further, the energy required to extract an electron from the lowest unoccupied molecular orbital of tris(8-quinolinolato aluminum) is about 3.0 electron-volts, which can be referred to as ELUM0. Thus the difference between EH0M0 and ELUM0 of tris(8-quinolinolato aluminum) is about 2.4 electron-volts. In other embodiments of the invention, other organic materials can be so chosen (i.e. by selection of material or modification of material with dopants) so that the difference between EHOMO and ELUMC- is m me range from about \ .5 electron-volts to about 3.0 electron-volts, which covers the spectrum of visible light.
In a present embodiment, optical interference member 16 comprises a semi-absorbent layer 16a and a transparent layer 16b. Semi-absorbent layer 16a is partially reflective, partially absorbing and partially transmissive of light in the visible spectrum, and in a present embodiment, is made from magnesium silver (Mg: Ag) having a thickness of about one-hundred-and-eighty-five angstroms (185A). Other suitable materials can include Inconel™, Nickel (Ni), Titanium, or a suitable organic material and appropriate thicknesses of such layers can be determined by those of skill in the art. The extinction coefficient of the material and its thickness, should be selected so that the reflection from layer 16a at a preselected wavelength, neglecting optical interference, should preferably be at least about thirty-five percent, with the remainder of light energy being, fransmitted or absorbed, and dissipated in the form of heat. Similarly, transmission through layer 16a at a preselected wavelength, neglecting optical interference, will preferably be at least about thirty-five percent.
It is to be understood that the extinction coefficient of layer 16a and its thickness can be selected so that the transmission through layer 16a at a preselected wavelength, neglecting optical interference, can be from about thirty percent to about forty percent. Overall, the amount of light transmitted through layer 16a, after two passes, should be substantially equal to the amount of light that is originally reflected from layer 16a, in order to achieve the appropriate destructive interference at the reflective surface of layer 16a, as will be understood by those of skill in the art.
Substantially transparent conducting layer 16b is made from indium tin oxide (ITO) and has a thickness of about eight-hundred-and- forty angstroms (840 A). Other suitable materials and layer thicknesses can be used as will occur to those of skill in the art, such as zinc oxide (ZnO). The extinction coefficient of the material of layer 16b and its thickness is selected so that the transmission through layer 16b at a preselected wavelength, neglecting optical interference, is greater than about eighty percent, but is preferably at least about ninety percent. As known to those of skill in the art, it is generally preferred that the preselected wavelength(s) for layer 16b should be substantially equal to the preselected wavelengths used to choose layer 16a.
A wavelength of about five-hundred-and-fifty nanometers (550nm), the . cenfre of the spectrum of visible light, is a presently preferred preselected wavelength used for the purpose of determining appropriate thicknesses and materials of layers 12 and 14 and member 16, as the resulting device 10 can have the desired optical interference characteristics across the visible light spectrum. As will be understood by those of skill in the art, an incidental benefit to the selection of this wavelength can result in a device which reflects electromagnetic energy outside the visible spectrum, including infra-red, thus reducing the heating of the display. However, it will occur to those of skill in the art that other wavelengths can be selected, as desired.
Optical interference member 16 is also quantifiable in terms of its work function ΦorM. or the amount of energy required to exfract an electron from the surface of member 16. In a present embodiment, positive-charges or holes flow from current source 20 through anode 12 and into elecfroluminescent layer 14, where they combine with electrons which flow from current source 20 through cathode 18, optical interference member 16 and into elecfroluminescent layer 14. Thus, in order to facilitate the injection of electrons into the lowest unoccupied molecular orbital of layer 14, the materials chosen for member 16 are such that the difference X between ELUM0 and Φ0ΪM, expressed as an absolute value, approaches zero. This expression can be expressed mathematically as:
Figure imgf000011_0001
Where ^
In order for the difference X to approach zero, it is believed that the X can be in the range of from about 0.0 to about 1.5 electron-volts (eV). It is believed that the difference X can be in the range of from about 0.1 to about 1.3 electron-volts. More preferably, it is believed that the difference X should be in the range of from about 0.6 to about 1.0 electron-volts. In the present embodiment, where layer 16a is made from magnesium silver and layer 16b is made from indium tin oxide, the overall work function ΦOIM of member 16 is about 3.6 electron-volts. As ELUMO is about 3.0 electron-volts, the difference X is about 0.6 electron-volts.
Cathode 18 is magnesium silver having a thickness of about five-hundred angstroms (50θΛ), and in the present embodiment is reflective. In other embodiments, it is believed that cathode 18 can have a thickness between about two-hundred-and-fifty angstroms (250A) to about two-thousand-angstroms (2000A). However, it will occur to those of skill in the art that other suitable conducting materials and thicknesses can be used.
It now will be apparent that the thickness and materials) of member 16 and its components can be determined with an operation that considers, at least in part, the thicknesses of and/or materials of anode 12, elecfroluminescent layer 14, and cathode 18.
Device 10 can be fabricated using techniques known in the art. In the foregoing embodiment, anode 12 is vacuum-deposited onto a glass substrate, and the subsequent layers are formed thereon also using vacuum deposition. The entire device 10 is then sealed using techniques known in the art. Other suitable substrates and means of fabricating device 10 will occur to those of skill in the art. For example, the substrate can be plastic. Further, where elecfroluminescent layer 14 is poly(n- vinyl carbozale), then spin-coating can be an appropriate fabrication technique for layer 14.
The operation of device 10 will now be discussed. It will be appreciated by those of skill in the art that the following is a simplified model for purposes of explanation, and that other physical phenomena occurring during the operation of device 10 are assumed, for the purposes of this discussion, to have a negligible influence on the operation. Current source 20 is 'on', so that holes are driven into electroluminescent layer 14 via anode 12. These holes then combine with electrons delivered into layer 14 from source 20, via cathode 18 and optical interference member 16. The fact that the difference between E^MO and ΦorM, expressed as an absolute value, approaches zero, reduces barriers to current flow through device 10, preventing or inhibiting breakdown of layer 14. The recombination of holes and electrons in layer 14 causes light to be emitted out through the front or exterior face of anode 12 and towards a viewer, as indicated by arrow Lem.
At the same time, ambient light is incident upon device 10, as indicated by arrow Lamb and passes through anode 12 and elecfroluminescent layer 14. Ambient light ^ incident upon semi-absorbing layer 16a is partially reflected, partially absorbed and partially transmitted. The light fransmitted through semi- absorbing layer 16a passes through transparent layer 16b, where it reflects off cathode 18 and back through transparent layer 16b, at which point this reflected light is inverted one-hundred-and-eighty degrees out of phase with the partially reflected light from layer 16a, and thus these two reflections destructively interfere and substantially cancel each other out. The energy otherwise found in these two reflections is absorbed by semi-absorbing layer 16a and cathode 18, where it is dissipated as a relatively small amount of heat. The result is that reflected light (Lref) back towards the viewer from device 10 is reduced. In a present embodiment, reflected light (Lref) is reduced by about ninety percent, compared to an electroluminescent device assembled without optical interference member 16.
It is believed that in other embodiments of the invention, reflected light (Lre£) can be reduced by as much as about 99.5 percent by choosing different materials, thicknesses and extinction coefficients for optical interference member 16 and by selected appropriate thicknesses and materials for the other layers in device 10, although still within the aforementioned acceptable parameters and ranges such that the difference between ELUM0 and Φ0IM, expressed as an absolute value, approaches zero. However, while a higher difference in energy levels between ELUM0 and 0IM> st^ within the acceptable ranges, can achieve reduced reflection, it can also result in reduced electrical efficiency in the current flow through device 10. In other embodiments of the invention, a suitably modified optical interference member 16 can be disposed in series with other layers of device 10. Referring now to Figure 2, an elecfroluminescent device in accordance with a second embodiment of the invention is indicated generally at 10a. Like components to those shown in Figure 1 areindicatedwithlikereferencenumbers. Device 10a comprises a elecfroluminescent fransmitting anode 12, an optical interference member 161 disposed behind anode 12, an elecfroluminescent layer 14 disposed behind interference member 16', and a cathode 18 disposed behind elecfroluminescent layer 14. Device 10a is connected to a current source 20 via anode 12 and cathode 18 in'order to drive a constant current through device 10 and layer 14.
Elecfroluminescent fransmitting anode 12 is any conducting material which is transparent to at least aportion of emitted elecfroluminescent light, such as indium fin oxide (ITO) or zinc oxide (ZnO). In a present embodiment, anode 12 is a layer of indium tin oxide preferably having a thickness of about fifteen- hundred angsfroms (1500A).
It is to be understood that elecfroluminescent fransmitting anode 12 can have different thicknesses, and can be in the range of, for example, from about one-thousand angsfroms (1000A) to about three-thousand angsfroms (3000A), or from about twelve-hundred angstroms (1200A) to about two-thousand angsfroms (2000A).
Elecfroluminescent layer 14 is an organic elecfroluminescent material such as tris(8-quinolinolato aluminum) (Alq3) or poly(n-vinyl carbozale) (PVCJ wherein photons of light are emitted when electrons drop from a lowest unoccupied molecular orbital ("lumo") of layer 14, where they combine with holes in the highest occupied molecular orbital ("homo") of layer 14. Accordingly, a current flow through electroluminescent layer 14 can produce an emission of light. In a present embodiment, layer 14 is preferably made from tris(8-quinolinolato aluminum), preferably having a thickness of about one- thousand angsfroms (lOOOA), although those of skill in the art will be able to select other appropriate thicknesses of this layer. As is known to those familiar with the electrical properties of tris(8-quinolinolato aluminum), the energy required to exfract an electron from the highest occupied molecular orbital, EH0M0, is about 5.4 electron-volts, which can also be described as the energy required to exfract an electron from the surface of layer 14, or, the work function of layer 14. Further, the energy required to exfract an electron from the lowest unoccupied molecular orbital of tris(8-quinolinolato aluminum) is about 3.0 electron-volts, which can be referred to as ELUM0. Thus the difference between ^HOMO arι<i ELUM0 of tris(8-quinolinolato aluminum) is about 2.4 electron-volts. In other embodiments of the invention, other organic materials can be so chosen (i.e. by selection of material or modification of material with dopants) so that the difference between EJJOMO and ELUM0 is in the range from about 1.5 electron-volts to about 3.0 electron-volts, which covers the spectrum of visible light.
In a present embodiment optical interference member 16' comprises a substantially transparent conducting layer 16c made from indium tin oxide (ΪTO) andhaving athickness of about seven-hundred-and-forty-five angsfroms (745A). Other suitable materials can be used as will occur to those of skill in the art, such . as zinc oxide (ZnO) or a suitable organic material. The indium tin oxide of layer 16c is modified (by controlling its stoichiometry) so that it behaves as a quarter- wave-stack at a light wavelength of five-hundred-and-fifty nanometers (550 nm), and chosen so that the transmission through layer 16c is greater than about eighty percent, and preferably at least about ninety percent. However, it will occur to those of skill in the art that other wavelengths can be selected, as desired.
As discussed previously, optical interference member 16' is also measurable in terms of work function Φ0IM- I 1 a present embodiment, holes flow from current source 20 through anode 12 and optical interference member 16', and into elecfroluminescent layer 14, where they combine with electrons which flow from current source 20 through cathode 18 and into electroluminescent layer 14. Thus, in order to facilitate the extraction of electrons from the highest occupied molecular orbital of electroluminescent layer 14, the materials chosen for member 16' are such that the difference Y between EH0M0 and Φ0IM, expressed as an absolute value, approaches zero. This expression can be expressed mathematically as:
Figure imgf000016_0001
Where γ→Q
In order for the difference between EJJOMO and Φ0IM to approach zero, it is believed that the difference Y can be in the range of from about 0.0 to about 1.5 elecfron-volts (eN). It is believed that the difference Y can be in the range of from about 0.1 to about 1.3 elecfron-volts. More preferably, it is believed that the difference Y should be in the range of from about 0.4 to about 1.0 elecfron-volts. In the present embodiment, where layer 16a is made from magnesium silver and layer 16b is made from indium tin oxide, the overall work function ΦOM of member 16 is about 5.0 elecfron-volts. Since EJJOMO is about 5.4 elecfron-volts, the difference Y is about 0.4 elecfron-volts (eN).
Cathode 18 is magnesium silver having a thickness of about five-hundred angsfroms (500A), and in the present embodiment is reflective. In other embodiments, it is believed that cathode 18 can have a thickness between about two-hundred-and-fifty angstroms (250 A) to about two-thousand-angsfroms (200θA). However, it will occur to those of skill in the art that other suitable conducting materials and thicknesses can be used.
It now will be apparent that the thickness and material(s) of member 16' and its components can be determined with an operation that considers, at least in part, the thicknesses of and/or materials of anode 12, elecfroluminescent layer 14, and cathode 18.
Device 10a can be fabricated using techniques known in the art. In the foregoing embodiment, anode 12 is vacuum-deposited onto a glass substrate, and the subsequent layers are formed thereon also using vacuum deposition. The entire device 10a is then sealed using techniques known in the art. Other suitable substrates and means of fabricating device 10a will occur to those of skill in the art. For example, the substrate can be plastic. Further, where electroluminescent layer 14 is poly(n- vinyl carbozale), then spin-coating can be an appropriate fabrication technique for layer 14.
Theoperation of device 10a will now be discussed. It will be appreciated by those of skill in the art that the following is a simplified model for purposes of explanation, and that omerphysicalphenomenaoccurringduringtheoperation of device 10a are assumed to have a negligible influence on the operation. Current source 20 is 'on', so that holes or positive-charges are driven into elecfroluminescent layer 14 via anode 12 and optical interference member 16. These positive-charges then combine with electrons delivered into layer 14 from source 20 via cathode 18. Because the difference between EHOMO and ΦOIM approaches zero, barriers to current flow through device 10a are reduced, preventing or inhibiting breakdown of layer 14. The recombination of electrons and holes in layer 14 causes light to be emitted out through the front face of anode 12 and towards a viewer, as indicated by arrow Lem. At the same time, ambient light is incident upon device 10a as indicated by arrow L^ and passes through anode 12 and is incident upon transparent layer 16c. About half of ambient Hght L^,, incident upon layer 16c is reflected, while the remainder is fransmitted. The hght transmitted through layer 16c reflects off the surface of elecfroluminescent layer 14 and back through layer 16c. Due to the quarter-wavelength thickness of layer 16c, this reflected light from layer 14 is inverted one-hundred-and-eighty degrees out of phase with the reflected light from layer 16c, and thus these two reflections destructively interfere and substantially cancel each other out. The energy otherwise found in these two reflections is fransmitted through layer 16c. The result is that reflected light (Lref) back towards the viewer from device 10 is reduced. In the present embodiment, reflected light (Lref) is believed to be reduced by arange of from about 0.5 percent to about two percent, compared to electroluminescent devices without layer 16'.
While only specific combinations of the various features and components of the present invention have been discussed herein, it will be apparent to those of skill in the art that desired sub-sets of the disclosed features and components and/or alternative combinations of these features and components canbe utilized, as desired. For example, the embodiments discussed herein can be combined to provide multiple optical interference members disposed between different layers of the elecfroluminescent device, and therefore disjoined from each other, in order to further reduce reflectance from the device. For example, layer 16' and layer 16 can be included on respective sides of layer 14. Furthermore, each optical interference member can be a transparent layer or a combination of a transparent layer and a semi-absorbing layer in order to achieve different results, and it will be apparent that these different types of optical interference members can also be placed at different locations throughout the device. For example, it is contemplated that a transparent layer, without a semi-absorbing layer can be used between the organic elecfroluminescent layer and the cathode, and similarly, a combination of a transparent layer and a semi- absorbing layer can be used between the anode and the elecfroluminescent layer, by having the difference between work function of the optical interference member and the energy required to exfract an electron from either highest occupied molecular orbital, and/or the lowest unoccupied molecular orbital, approach zero, as appropriate.
The present invention can be suitable for a computer display. For example, a pixilated organic elecfroluminescent computer display can be formed where the anode comprises a plurality of generally parallel and spaced anodes to compose the front layer of an organic electroluminescent computer display, and the cathode comprises a number of spaced cathodes which are generally perpendicular to the anodes. It will be further understood that the anode and the cathode can be patterned in a variety of ways, other than pixilated, to create different recognizable patterns to a user of device 10. When such a display is pixilated or patterned, it will be appreciated that individual pixels or patterns can be fired using known techniques such as pulsed-DC, and/or adding a periodic reverse-polarity 'refresh' pulse to reduce built-up charge. The device can also be hybrid-display having an active matrix, as can be found in notebook computers.
In addition, the present invention can be suitably modified for use in colour organic electroluminescent devices. As known to those of skill in the art, such multi-colour and full-colour devices can be formed from stacked transparent organic electroluminescent layers. Where the optical interference member is between two of these stacked layers, it will be apparent that the difference between its work function and the energy level required to exfract an electron from the lowest unoccupied molecular orbital of the elecfroluminescent layer nearest the anode should approach zero, and the difference between the work function and the energy level required to exfract an elecfron from the highest occupied molecular orbital of the elecfroluminescent layer nearest the cathode should also approach zero. More preferably, the work function of the optical interference member should be the average of the lowest unoccupied molecular orbitals of the surrounding elecfroluminescent layers. Multi-coloured and full-coloured devices can also be provided through a patterned red-green-blue organic layer (i.e. by selecting materials having inherent colour properties, or by appropriately doping the patterns on the layer). Other colourizing techniques can including the use of a white-emitter and appropriate filters. It will be apparent that the teachings of the present invention can be modified to accommodate these and other colour devices.
The present invention can also be used as a backlight for a liquid crystal display. It will also be understood that the present invention can be suitably modified for organic elecfroluminescent devices which have an electron fransport layer between the cathode and the electroluminescent layer, and/or a hole transport layer between the anode and the elecfroluminescent layer. In this embodiment, the optical interference member can thus be placed between the transport layer and the electroluminescent layer, or the fransport layer can be placed between the elecfroluminescent layer and the optical interference member. In this embodiment of the invention, it will be apparent that the optical interference member is still selected to have a work function such that the difference between the work function and the energy levels associated with the respective anode side and/or cathode side of the electroluminescent layer(s) approach zero, in order to facilitate current flow through the entire device. It is also contemplated that an appropriate transport layer can be incorporated into an optical interference member.
Furthermore, while the embodiments herein refer to a front anode and a rear cathode, it will be apparent that the present invention can be suitable to a device having a front cathode and a rear anode, as long as at least the front layer is transparent to at least a portion of emitted elecfroluminescent light.
The present invention provides a novel organic elecfroluminescent device having an optical interference member which reduces the overall reflectance from the device. The optical interference member is selected to have a thickness which causes at least some destructive optical interference of ambient hght incident on the display. In addition, the materials) of the optical interference member are chosen to have a work function such that the difference between the work function and the energy level required to exfract an elecfron from the highest occupied molecular orbital, or the lowest unoccupied molecular orbital of the elecfroluminescent layer approaches zero, depending on the direction of current flow and location of the optical interference member in relation to the elecfroluminescent layer. The appropriate selection of material for the optical interference member improves proper current flow through the device, thus reducing the likelihood of electrical breakdown of the organic elecfroluminescent layer and improving the overall energy efficiency of the device. Finally, in embodiments where a semi-absorbent layer and transparent layer are combined to form the optical interference member, then placement of such an optical interference member in contact with the electrode at the back of the device can actually increase the reflectance of infra-red ambient signatures, compared to absorbing films, thus reducing the heating of the display and reducing the likelihood of damage to the electroluminescent layer.
While thepresentinventionhas been described with reference to preferred and specifically illustrated embodiments, it will of course be understood by those skilled in the arts that various modifications to these preferred and illustrated embodiments may be made without departing from the spirit and scope of the invention.
All publications, patents and patent applications referred to herein are incorporated by reference in their entirety to the same extent as if each individual publication, patent or patent application was specifically and individually indicated to be incorporated by reference in its entirety.

Claims

What is claimed is:
1. An elecfroluminescent device for displaying an image to a viewer in front of said device, comprising: an anode layer; a cathode layer, at least one of said anode layer and said cathode layer being said front and being substantially transparent to elecfroluminescent light; an organic elecfroluminescent layer disposed between said cathode layer and said anode layer, said elecfroluminescent layer having a highest occupied molecular orbital associated with an anode side, and a lowest unoccupied molecular orbital associated with a cathode side; and an optical interference member for reducing the reflectance of ambient hght towards said viewer, said member disposed between said anode layer and said cathode layer, said optical interferencemember having a work function, such that a first difference between said work function and a first energy level required to remove an elecfron from said highest occupied molecular orbital when said optical interference member is at said anode side approaches zero, and a second difference between said work function and a second energy level required to remove an electron from said lowest unoccupied molecular orbital when said optical interference member is at said cathode side approaches zero.
2. The device according to claim 1, wherein said first difference is from about zero elecfron-volts to about 1.5 elecfron-volts.
3. The device according to claim 1, wherein said first difference is from about 0.1 electron-volts to about 1.3 electron-volts.
4. The device according to claim 1, wherein said first difference is from about 0.4 electron-volts to about one electron-volt.
5. The device according to claim 1, wherein said first energy level is about 5.4 electron-volts and said work function is about 5.0 electron-volts.
6. The device according to claim 1, wherein said second difference between said work function and said second energy characteristic is from about zero elecfron-volts to about 1.5 elecfron-volts.
7. The device according to claim 1 , wherein said second difference is from about 0.1 electron-volts to about 1.3. electron-volts.
8. The device according to claim 1 , wherein said second difference is from about 0.6 elecfron-volts to about one electron-volt.
9. The device according to claim 1, wherein said second energy level is about 3.0 elecfron-volts and said work function is about 3.6 elecfron-volts.
10. The device according to claim 1 , wherein said organic elecfrolunώiescent layer is tris(8-quinolinolato aluminum).
11. The device according to claim 1 , wherein said organic elecfroluminescent layer is poly(n-vinyl carbozale).
12. The device according to claim 1, wherein said optical interference member is between said elecfroluminescent layer and said cathode.
13. The device according to claim 1, wherein said optical interference member comprises a semi-absorbent layer and a transparent layer.
14. The device according to claim 13, wherein said semi-absorbent layer is magnesium silver and said transparent layer is indium tin oxide, said optical interference member having a work function of 3.6 electron-volts.
15. The device according to claim 1, wherein said optical interference member is between said anode and said electroluminescent layer.
16. The device according to claim 1, wherein said optical interference member comprises a transparent layer.
17. The device according to claim 16, wherein said transparent layer is made from indium tin oxide.
18. The device according to claim 1 , further comprising at least one additional optical interference member disposed between said anode layer and said cathode layer and disjoined from said optical interference member.
19. The device according to claim 1 , further comprising at least one additional organic elecfroluminescent layer disposed between said cathode layer and said anode layer.
20. The device according to claim 19, wherein said optical interference member is between two of said elecfroluminescent layers.
21. The device according to claim 1, wherein said device is a patterned organic electroluminescent computer display.
22. The device according to claim 21, wherein said device is pixilated and said anode comprises a plurality of generally parallel anodes and said cathode comprises aplurality of cathodes that are generally perpendicular to each of said plurality of generally parallel anodes.
23. The device according to claim 1, wherein said device is a colour electroluminescent display.
24. The device according to claim 1 , further comprising an electron transport layer between said cathode layer and said electroluminescent layer.
25. The device according to claim 1 , further comprising a hole fransport layer between said anode layer and said elecfroluminescent layer.
26. The device according to claim 25, wherein said hole fransport layer is incorporated into said optical interference member.
27. An optical interference elecfroluminescent device for displaying an image to a viewer in front of said device, comprising: an anode layer; a cathode layer, at least one of the anode layer and the cathode layer being substantially transparent to at least a portion of emitted elecfroluminescent light; at least one organic elecfroluminescent layer disposed between said anode layer and said cathode layer, said elecfroluminescent layer having a first energy characteristic being the amount of energy required to exfract an elecfron from a highest occupied molecular orbital of said elecfroluminescent layer, and a second energy characteristic being the amount of energy required to exfract an elecfron from a lowest unoccupied molecular orbital of said elecfroluminescent layer; and at least one optical interference member disposed between two of said layers, and having a work function substantially equal to said first energy characteristic when said optical interference member is between said anode and said elecfroluminescent layer, and having a work function substantially equal to said second energy characteristic when said optical interference member is between said cathode and said elecfroluminescent layer, said optical interference member being of a thickness and material such that the specfral reflectance of said electroluminescent device is so modified that the reflectance of ambient light by said electroluminescent device towards said viewer is reduced.
28. An electroluminescent device to emit light in a selected spectrum, comprising: an anode layer a cathode layer, one of said anode layer and said cathode layer being substantially transparent to at least aportion of said selected spectrum emitted by said elecfroluminescent device; an organic elecfroluminescent layer between said anode layer and said cathode layer, said elecfroluminescent layer having a highest occupied molecular orbital respective to said anode layer and having a lowest unoccupied molecular orbital respective to said cathode layer; and an optical interference member having a selected work function and operable to reduce ambient light reflected through said transparent layer, said optical interference member being between said elecfroluminescent layer and one of said anode layer and said cathode layer, wherein the difference between said selected work function and an energy level required to extract an elecfron from a respective molecular orbital approaches zero.
29. A method of fabricating an elecfroluminescent device for displaying an image to a viewer in front of said device, comprising the steps of: depositing an anode layer onto a substrate; depositing an organic electroluminescent layer onto said anode layer, said elecfroluminescent layer having a first energy characteristic associated with an anode side, and a second energy characteristic associated with a cathode side; depositing an optical interference member onto said electroluminescent layer, said optical interference member for reducing the reflectance of ambient light towards said viewer, said optical interference member having a work function substantially equal to said second energy characteristic; depositing a cathode layer onto said optical interference member; and sealing said device.
30. A method of assembling an electroluminescent device for displaying an image to a viewer in front of said device, comprising the steps of: depositing an anode layer onto a substrate; depositing an optical interference member onto said anode layer; said optical interference member for reducing the reflectance of ambient light towards said viewer, said optical interference member having a work function; depositing an organic elecfroluminescent layer onto said interference member, said elecfroluminescent layer having an energy characteristic being the amount of energy required to exfract an elecfron from said elecfroluminescent layer, said energy characteristic being substantially equal to said work function; depositing a cathode layer onto said elecfroluminescent layer; and sealing said device.
31. A method of displaying an image to a viewer comprising the steps of: emitting hght from an organic elecfroluminescent layer between an anode and a cathode, said elecfroluminescent layer having a first energy characteristic respective to said anode and a second energy characteristic respective to said cathode; and receiving ambient light incident towards said elecfroluminescent layer; and forming destructive interference from said ambient light at the incident surface of an optical interference member, said optical interference member having a selected work function and disposed between said elecfroluminescent layer and one of said anode and said cathode, the difference between said work function and a respective energy characteristic approaching zero.
PCT/CA2000/000849 1999-07-27 2000-07-21 Organic electroluminescent device WO2001008240A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP00949029A EP1208611A1 (en) 1999-07-27 2000-07-21 Organic electroluminescent device
AU62565/00A AU6256500A (en) 1999-07-27 2000-07-21 Organic electroluminescent device
JP2001512652A JP2003505849A (en) 1999-07-27 2000-07-21 Organic electroluminescence device
CA002378442A CA2378442A1 (en) 1999-07-27 2000-07-21 Organic electroluminescent device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/361,137 1999-07-27
US09/361,137 US6411019B1 (en) 1999-07-27 1999-07-27 Organic electroluminescent device

Publications (2)

Publication Number Publication Date
WO2001008240A1 WO2001008240A1 (en) 2001-02-01
WO2001008240A9 true WO2001008240A9 (en) 2002-08-29

Family

ID=23420803

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CA2000/000849 WO2001008240A1 (en) 1999-07-27 2000-07-21 Organic electroluminescent device

Country Status (8)

Country Link
US (5) US6411019B1 (en)
EP (2) EP1208611A1 (en)
JP (1) JP2003505849A (en)
KR (1) KR100752716B1 (en)
CN (1) CN1199294C (en)
AU (1) AU6256500A (en)
CA (1) CA2378442A1 (en)
WO (1) WO2001008240A1 (en)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6411019B1 (en) * 1999-07-27 2002-06-25 Luxell Technologies Inc. Organic electroluminescent device
TW585895B (en) * 1999-09-02 2004-05-01 Nippon Steel Chemical Co Organic EL material
JP2001279429A (en) * 2000-03-30 2001-10-10 Idemitsu Kosan Co Ltd Method for depositing thin film layer for element and organic electroluminescence element
US6846437B2 (en) * 2000-11-28 2005-01-25 Astaris, Llc Ammonium polyphosphate solutions containing multi-functional phosphonate corrosion inhibitors
US6841932B2 (en) 2001-03-08 2005-01-11 Xerox Corporation Display devices with organic-metal mixed layer
US7288887B2 (en) 2001-03-08 2007-10-30 Lg.Philips Lcd Co. Ltd. Devices with multiple organic-metal mixed layers
US20030007736A1 (en) * 2001-07-04 2003-01-09 Fuji Photo Film Co., Ltd. Optical transmission module and optical transceiver
CA2352390A1 (en) * 2001-07-04 2003-01-04 Luxell Technologies Inc. Contrast enhancement apparatus
US6750609B2 (en) 2001-08-22 2004-06-15 Xerox Corporation OLEDs having light absorbing electrode
US7071613B2 (en) * 2001-10-10 2006-07-04 Lg.Philips Lcd Co., Ltd. Organic electroluminescent device
US6861810B2 (en) 2001-10-23 2005-03-01 Fpd Systems Organic electroluminescent display device driving method and apparatus
US7961682B2 (en) 2002-04-11 2011-06-14 Qualcomm Incorporated Handoff between base stations of different protocol revisions in a CDMA system
US7579771B2 (en) 2002-04-23 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and method of manufacturing the same
US7786496B2 (en) 2002-04-24 2010-08-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing same
JP2003317971A (en) 2002-04-26 2003-11-07 Semiconductor Energy Lab Co Ltd Light emitting device and its producing method
CA2419121A1 (en) * 2002-05-03 2003-11-03 Luxell Technologies, Inc. Dark layer for an electroluminescent device
WO2003094255A2 (en) * 2002-05-03 2003-11-13 Luxell Technologies Inc. Contrast enhanced oleds
WO2003094253A2 (en) * 2002-05-03 2003-11-13 Luxell Technologies Inc. Dark layer for an electroluminescent device
CA2422895A1 (en) * 2002-05-06 2003-11-06 Luxell Technologies Inc. Electroluminescent device
US7242140B2 (en) * 2002-05-10 2007-07-10 Seiko Epson Corporation Light emitting apparatus including resin banks and electronic device having same
US7897979B2 (en) 2002-06-07 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US7372436B2 (en) 2002-06-11 2008-05-13 Luxell Technologies, Inc. OLED display with contrast enhancing interference members
JP4216008B2 (en) 2002-06-27 2009-01-28 株式会社半導体エネルギー研究所 LIGHT EMITTING DEVICE AND ITS MANUFACTURING METHOD, AND VIDEO CAMERA, DIGITAL CAMERA, GOGGLE TYPE DISPLAY, CAR NAVIGATION, PERSONAL COMPUTER, DVD PLAYER, ELECTRONIC GAME EQUIPMENT, OR PORTABLE INFORMATION TERMINAL HAVING THE LIGHT EMITTING DEVICE
US7045955B2 (en) * 2002-08-09 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Electroluminescence element and a light emitting device using the same
JP4186101B2 (en) * 2002-09-04 2008-11-26 ソニー株式会社 Organic EL display device
JP4371297B2 (en) * 2002-10-02 2009-11-25 パイオニア株式会社 Organic EL display
JP4580160B2 (en) * 2002-10-08 2010-11-10 パイオニア株式会社 Organic electroluminescence device
JP3944906B2 (en) * 2002-11-11 2007-07-18 ソニー株式会社 LIGHT EMITTING ELEMENT AND DISPLAY DEVICE USING THE SAME
CA2411683A1 (en) * 2002-11-13 2004-05-13 Luxell Technologies Inc. Oled with contrast enhancement features
KR100879474B1 (en) * 2002-12-05 2009-01-20 삼성모바일디스플레이주식회사 Organic Electroluminescence device
KR100879475B1 (en) * 2002-12-05 2009-01-20 삼성모바일디스플레이주식회사 Organic electroluminescence device
US6936960B2 (en) * 2003-01-10 2005-08-30 Eastman Kodak Company OLED displays having improved contrast
KR100952273B1 (en) * 2003-03-18 2010-04-12 사천홍시현시기건유한공사 Organic Electroluminescent Device and Manufacturing Method Thereof
WO2004095507A2 (en) * 2003-04-23 2004-11-04 Zheng-Hong Lu Light-emitting devices with an embedded charge injection electrode
US20040256978A1 (en) * 2003-05-27 2004-12-23 Gang Yu Array comprising organic electronic devices with a black lattice and process for forming the same
US7045954B2 (en) * 2003-06-17 2006-05-16 City University Of Hong Kong Organic light-emitting device with reduction of ambient-light-reflection by disposing a multilayer structure over a semi-transparent cathode
US20050052119A1 (en) * 2003-09-08 2005-03-10 Gang Yu Organic electronic device having low background luminescence
JP4497881B2 (en) * 2003-09-30 2010-07-07 三洋電機株式会社 Organic EL device and organic EL panel
JP4428979B2 (en) * 2003-09-30 2010-03-10 三洋電機株式会社 Organic EL panel
GB0401613D0 (en) * 2004-01-26 2004-02-25 Cambridge Display Tech Ltd Organic light emitting diode
TWI231723B (en) * 2004-04-16 2005-04-21 Ind Tech Res Inst Organic electroluminescence display device
JP2008500695A (en) 2004-05-25 2008-01-10 エージェンシー・フォア・サイエンス・テクノロジー・アンド・リサーチ Composite optical breakdown electrode for high-contrast electroluminescent devices
KR100579194B1 (en) * 2004-05-28 2006-05-11 삼성에스디아이 주식회사 Method for fabricating an Organic light emitting display device
EP1784056B1 (en) * 2004-07-23 2011-04-13 Konica Minolta Holdings, Inc. Organic electroluminescent device, display and illuminating device
US7449830B2 (en) 2004-08-02 2008-11-11 Lg Display Co., Ltd. OLEDs having improved luminance stability
TWI233319B (en) * 2004-08-10 2005-05-21 Ind Tech Res Inst Full-color organic electroluminescence device and display panel using the same
US7863632B2 (en) * 2004-08-23 2011-01-04 National Research Council Of Canada High performance light-emitting devices
KR100601381B1 (en) * 2004-11-29 2006-07-13 삼성에스디아이 주식회사 Flat panel display apparatus and fabricating method of the same
US20060138946A1 (en) * 2004-12-29 2006-06-29 Jian Wang Electrical device with a low reflectivity layer
US7554112B1 (en) 2005-03-10 2009-06-30 E. I. Du Pont De Nemours And Company Organic electronic device and processes for forming and using the same
JP2006260853A (en) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd Lighting device
US8487527B2 (en) 2005-05-04 2013-07-16 Lg Display Co., Ltd. Organic light emitting devices
US7777407B2 (en) 2005-05-04 2010-08-17 Lg Display Co., Ltd. Organic light emitting devices comprising a doped triazine electron transport layer
CN100369288C (en) * 2005-05-11 2008-02-13 友达光电股份有限公司 Organic electroluminescent display elements
US7811679B2 (en) 2005-05-20 2010-10-12 Lg Display Co., Ltd. Display devices with light absorbing metal nanoparticle layers
US7943244B2 (en) 2005-05-20 2011-05-17 Lg Display Co., Ltd. Display device with metal-organic mixed layer anodes
US7728517B2 (en) 2005-05-20 2010-06-01 Lg Display Co., Ltd. Intermediate electrodes for stacked OLEDs
US20070138637A1 (en) * 2005-12-19 2007-06-21 Shiva Prakash Electronic device having low background luminescence, a black layer, or any combination thereof
US7687989B2 (en) * 2006-12-01 2010-03-30 Global Oled Technology Llc Emissive displays having improved contrast
JP4757186B2 (en) * 2006-12-28 2011-08-24 キヤノン株式会社 Organic light emitting device array and organic light emitting device array package
JP2010524172A (en) * 2007-04-04 2010-07-15 エージェンシー・フォア・サイエンス・テクノロジー・アンド・リサーチ LIGHT EMITTING ELEMENT STRUCTURE AND ITS MANUFACTURING METHOD
TW200919758A (en) * 2007-10-22 2009-05-01 Univ Nat Taiwan An organic light emitting diode display device with energy-recycling capability
FR2925746B1 (en) * 2007-12-21 2010-01-01 Commissariat Energie Atomique DISPLAY DEVICE COMPRISING COLOR FILTERS AND ELECTRONICALLY ALIGNED PHOTOEMISSIVE ELEMENTS
TWI372575B (en) * 2008-03-04 2012-09-11 Chimei Innolux Corp Organic light-emitting diode display device
GB2460822A (en) * 2008-06-03 2009-12-16 Cambridge Display Tech Ltd Organic electroluminescent device
US8643000B2 (en) * 2008-11-18 2014-02-04 E I Du Pont De Nemours And Company Organic electronic device with low-reflectance electrode
KR101084239B1 (en) * 2009-12-08 2011-11-16 삼성모바일디스플레이주식회사 Organic light emitting diode display
FR2962853A1 (en) * 2010-07-13 2012-01-20 Commissariat Energie Atomique ORGANIC ELECTROLUMINESCENT DIODE AND SCREEN WITH LOW REFLECTIVITY.
CN103137882A (en) * 2011-11-22 2013-06-05 海洋王照明科技股份有限公司 Organic electroluminescent device and production method thereof
KR101951223B1 (en) 2012-10-26 2019-02-25 삼성디스플레이 주식회사 Display device and method of manufacturing the same
CN104183720A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode, display screen and terminal
CN104183748A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode, display screen and terminal
CN104183711A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode, display screen and terminal
CN104183714A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Organic light emission diode and preparation method thereof, display screen and terminal
CN104183749A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Inversed organic light emission diode, display screen and terminal
KR102132464B1 (en) * 2013-06-07 2020-07-10 삼성디스플레이 주식회사 Light emitting display device and method of fabricating the same
KR102080131B1 (en) 2013-06-17 2020-04-14 삼성디스플레이 주식회사 Organic light emitting diode display
KR102084715B1 (en) 2013-06-18 2020-03-05 삼성디스플레이 주식회사 Organic light emitting diode display panel
KR102090713B1 (en) 2013-06-25 2020-03-19 삼성디스플레이 주식회사 flexible display panel and the display apparatus comprising the flexible display panel
CN107195797B (en) * 2017-06-28 2019-11-01 京东方科技集团股份有限公司 A kind of display base plate and display device

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI60333C (en) * 1980-04-24 1981-12-10 Lohja Ab Oy Electro-luminescent-AOTERGIVNINGSKOMPONENT
CA1302547C (en) 1988-12-02 1992-06-02 Jerzy A. Dobrowolski Optical interference electroluminescent device having low reflectance
US5049760A (en) * 1990-11-06 1991-09-17 Motorola, Inc. High speed complementary flipflop
US5343050A (en) * 1992-01-07 1994-08-30 Kabushiki Kaisha Toshiba Organic electroluminescent device with low barrier height
US5652067A (en) * 1992-09-10 1997-07-29 Toppan Printing Co., Ltd. Organic electroluminescent device
JP3274527B2 (en) * 1992-09-22 2002-04-15 株式会社日立製作所 Organic light emitting device and its substrate
US5804919A (en) * 1994-07-20 1998-09-08 University Of Georgia Research Foundation, Inc. Resonant microcavity display
JP3551475B2 (en) * 1994-06-25 2004-08-04 凸版印刷株式会社 Thin-film EL device
JP3249297B2 (en) * 1994-07-14 2002-01-21 三洋電機株式会社 Organic electroluminescent device
US5846506A (en) * 1994-10-07 1998-12-08 Degussa Aktiengesellschaft Precipitated silicas
JP2931229B2 (en) * 1995-02-13 1999-08-09 出光興産株式会社 Organic electroluminescence device
CN1100472C (en) * 1995-08-11 2003-01-29 美国3M公司 Electroluminescent lamp using multilayer optical film
JPH09204981A (en) 1996-01-26 1997-08-05 Nippon Steel Chem Co Ltd Organic el element
US6211613B1 (en) 1996-04-10 2001-04-03 Cambridge Display Technology Limited High contrast electroluminescent displays
JPH1079297A (en) * 1996-07-09 1998-03-24 Sony Corp Electroluminescent element
JPH10125469A (en) 1996-10-24 1998-05-15 Tdk Corp Organic electroluminescent element
JP3472432B2 (en) * 1997-03-28 2003-12-02 シャープ株式会社 Antireflection film for display device, method for manufacturing the same, and EL element
US6667494B1 (en) * 1997-08-19 2003-12-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device
JPH11167373A (en) * 1997-10-01 1999-06-22 Semiconductor Energy Lab Co Ltd Semiconductor display device and driving method thereof
US6133693A (en) * 1998-07-30 2000-10-17 Alliedsignal Inc. Interconnects and electrodes for high luminance emissive displays
GB9901334D0 (en) * 1998-12-08 1999-03-10 Cambridge Display Tech Ltd Display devices
US6366017B1 (en) * 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
US6411019B1 (en) * 1999-07-27 2002-06-25 Luxell Technologies Inc. Organic electroluminescent device
KR100329571B1 (en) * 2000-03-27 2002-03-23 김순택 Organic electroluminescent device

Also Published As

Publication number Publication date
KR100752716B1 (en) 2007-08-29
AU6256500A (en) 2001-02-13
US6411019B1 (en) 2002-06-25
CA2378442A1 (en) 2001-02-01
US20020153834A1 (en) 2002-10-24
US20040052931A1 (en) 2004-03-18
KR20020034165A (en) 2002-05-08
CN1369116A (en) 2002-09-11
JP2003505849A (en) 2003-02-12
US6784602B2 (en) 2004-08-31
US6551651B2 (en) 2003-04-22
US20030127971A1 (en) 2003-07-10
EP1208611A1 (en) 2002-05-29
CN1199294C (en) 2005-04-27
WO2001008240A1 (en) 2001-02-01
EP1300891A1 (en) 2003-04-09
US20020039871A1 (en) 2002-04-04

Similar Documents

Publication Publication Date Title
US6411019B1 (en) Organic electroluminescent device
EP1244153B9 (en) Polymer organic light emitting device with improved color control
US8212269B2 (en) Organic light emitting device, method for producing thereof and array of organic light emitting devices
JP2824411B2 (en) Organic thin-film light emitting device
JP4951130B2 (en) ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
US7432648B2 (en) Microcavity electroluminescent display with partially reflective electrodes
JP3551475B2 (en) Thin-film EL device
EP1256989B1 (en) Organic light emitting diode with high contrast ratio
US20060158098A1 (en) Top-emitting OLED device with improved performance
JP4769068B2 (en) ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF
JP2000243573A (en) Organic electroluminescent element and manufacture thereof
WO2000001204A9 (en) Electroluminescent display
WO2001006816A9 (en) Optical interference layer for electroluminescent devices
WO2003005776A1 (en) El device with enhanced contrast
US20060103321A1 (en) Electroluminescent device with a transparent cathode
KR100528916B1 (en) Rear type electroluminescence device
KR100544120B1 (en) Electroluminescence device
CA2422895A1 (en) Electroluminescent device

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A1

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: A1

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
WWE Wipo information: entry into national phase

Ref document number: IN/PCT/2002/00009/MU

Country of ref document: IN

WWE Wipo information: entry into national phase

Ref document number: 2378442

Country of ref document: CA

WWE Wipo information: entry into national phase

Ref document number: 62565/00

Country of ref document: AU

Ref document number: 10048586

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 1020027001007

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 00810851X

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2000949029

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 1020027001007

Country of ref document: KR

REG Reference to national code

Ref country code: DE

Ref legal event code: 8642

WWP Wipo information: published in national office

Ref document number: 2000949029

Country of ref document: EP

AK Designated states

Kind code of ref document: C2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW

AL Designated countries for regional patents

Kind code of ref document: C2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG

COP Corrected version of pamphlet

Free format text: PAGE 1/1, DRAWINGS, REPLACED BY NEW PAGES 1/2-2/2; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE

WWW Wipo information: withdrawn in national office

Ref document number: 2000949029

Country of ref document: EP